Phase Change Dynamics and 2-Dimensional 4-Bit Memory
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Denys I. Bondar
Updated on July 15, 2020 Denys I. Bondar Assistant Professor, Department of Physics and Engineering Physics, Tulane University, 2001 Percival Stern Hall, New Orleans, Louisiana, USA 70118 office: 4031 Percival Stern Hall e-mail: [email protected] phone: +1 (504) 862 8701 web: Google Scholar, Research Gate, ORCiD Education Ph. D. in Physics 01/2007{12/2010 Department of Physics and Astronomy, • University of Waterloo, Waterloo, Ontario, Canada Ph. D. thesis [arXiv:1012.5334]: supervisor: Misha Yu. Ivanov; co-supervisor: Wing-Ki Liu M. Sc. and B. Sc. in Physics with Honors 09/2001{06/2006 • Uzhgorod National University, Uzhgorod, Ukraine B. Sc. in Computer Science 09/2001{06/2006 • Transcarpathian State University, Uzhgorod, Ukraine Awards, Grants, and Scholarships Young Faculty Award DARPA 2019{2021 Army Research Office (ARO) grant W911NF-19-1-0377 2019{2021 Defense University Research Instrumentation Program (DURIP) 2018 Humboldt Research Fellowship for Experienced Researchers 2017-2020 Air Force Young Investigator Research Program 2016-2019 Los Alamos Director's Fellowship (declined) 2013 President's Graduate Scholarship (University of Waterloo) 2010 Ontario Graduate Scholarship 2010 International Doctoral Student Awards (University of Waterloo) 2007-2010 Award of Recognition at the All-Ukrainian Contest of Students' Scientific Works 2006 Current Research Interests • Quantum technology • Optics including quantum, ultrafast, nonlinear, and incoherent • Optical communication and sensing • Nonequilibrium quantum statistical mechanics 1 • Many-body -
Nanosystems, Edge Computing, and the Next Generation Computing Systems
sensors Review Nanosystems, Edge Computing, and the Next Generation Computing Systems Ali Passian * and Neena Imam Computing & Computational Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA; [email protected] * Correspondence: [email protected] Received: 30 July 2019; Accepted: 16 September 2019; Published: 19 September 2019 Abstract: It is widely recognized that nanoscience and nanotechnology and their subfields, such as nanophotonics, nanoelectronics, and nanomechanics, have had a tremendous impact on recent advances in sensing, imaging, and communication, with notable developments, including novel transistors and processor architectures. For example, in addition to being supremely fast, optical and photonic components and devices are capable of operating across multiple orders of magnitude length, power, and spectral scales, encompassing the range from macroscopic device sizes and kW energies to atomic domains and single-photon energies. The extreme versatility of the associated electromagnetic phenomena and applications, both classical and quantum, are therefore highly appealing to the rapidly evolving computing and communication realms, where innovations in both hardware and software are necessary to meet the growing speed and memory requirements. Development of all-optical components, photonic chips, interconnects, and processors will bring the speed of light, photon coherence properties, field confinement and enhancement, information-carrying capacity, and the broad spectrum of light into the high-performance computing, the internet of things, and industries related to cloud, fog, and recently edge computing. Conversely, owing to their extraordinary properties, 0D, 1D, and 2D materials are being explored as a physical basis for the next generation of logic components and processors. Carbon nanotubes, for example, have been recently used to create a new processor beyond proof of principle. -
Advances in Photonic Devices Based on Optical Phase-Change Materials
molecules Review Advances in Photonic Devices Based on Optical Phase-Change Materials Xiaoxiao Wang 1, Huixin Qi 1, Xiaoyong Hu 1,2,3,*, Zixuan Yu 1, Shaoqi Ding 1, Zhuochen Du 1 and Qihuang Gong 1,2,3 1 Collaborative Innovation Center of Quantum Matter & Frontiers Science Center for Nano-Optoelectronics, State Key Laboratory for Mesoscopic Physics & Department of Physics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China; [email protected] (X.W.); [email protected] (H.Q.); [email protected] (Z.Y.); [email protected] (S.D.); [email protected] (Z.D.); [email protected] (Q.G.) 2 Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, China 3 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China * Correspondence: [email protected] Abstract: Phase-change materials (PCMs) are important photonic materials that have the advantages of a rapid and reversible phase change, a great difference in the optical properties between the crystalline and amorphous states, scalability, and nonvolatility. With the constant development in the PCM platform and integration of multiple material platforms, more and more reconfigurable photonic devices and their dynamic regulation have been theoretically proposed and experimentally demonstrated, showing the great potential of PCMs in integrated photonic chips. Here, we review the recent developments in PCMs and discuss their potential for photonic devices. A universal overview of the mechanism of the phase transition and models of PCMs is presented. PCMs have injected new life into on-chip photonic integrated circuits, which generally contain an optical switch, Citation: Wang, X.; Qi, H.; Hu, X.; an optical logical gate, and an optical modulator. -
Crystallization Kinetics of Chalcogenide Glasses
2 Crystallization Kinetics of Chalcogenide Glasses Abhay Kumar Singh Department of Physics, Banaras Hindu University, Varanasi, India 1. Introduction 1.1 Background of chalcogenides Chalcogenide glasses are disordered non crystalline materials which have pronounced tendency their atoms to link together to form link chain. Chalcogenide glasses can be obtained by mixing the chalcogen elements, viz, S, Se and Te with elements of the periodic table such as Ga, In, Si, Ge, Sn, As, Sb and Bi, Ag, Cd, Zn etc. In these glasses, short-range inter-atomic forces are predominantly covalent: strong in magnitude and highly directional, whereas weak van der Waals' forces contribute significantly to the medium-range order. The atomic bonding structure is, in general more rigid than that of organic polymers and more flexible than that of oxide glasses. Accordingly, the glass-transition temperatures and elastic properties lay in between those of these materials. Some metallic element containing chalcogenide glasses behave as (super) ionic conductors. These glasses also behave as semiconductors or, more strictly, they are a kind of amorphous semi-conductors with band gap energies of 1±3eV (Fritzsche, 1971). Commonly, chalcogenide glasses have much lower mechanical strength and thermal stability as compared to existing oxide glasses, but they have higher thermal expansion, refractive index, larger range of infrared transparency and higher order of optical non-linearity. It is difficult to define with accuracy when mankind first fabricated its own glass but sources demonstrate that it discovered 10,000 years back in time. It is also difficult to point in time, when the field of chalcogenide glasses started. -
Unraveling the Crystallization Kinetics of Supercooled Liquid Gete By
Article pubs.acs.org/crystal Unraveling the Crystallization Kinetics of Supercooled Liquid GeTe by Ultrafast Calorimetry † ‡ § ‡ † § ‡ † † Yimin Chen, , , Guoxiang Wang, Lijian Song, , Xiang Shen,*, Junqiang Wang,*, Juntao Huo, ‡ † ‡ ‡ ‡ Rongping Wang, Tiefeng Xu, , Shixun Dai, and Qiuhua Nie † Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology & Engineering, Chinese of Sciences, Ningbo, 315201, China ‡ Laboratory of Infrared Material and Devices & Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Advanced Technology Research Institute, Ningbo, 315211, China § University of Chinese Academy of Sciences, Beijing, 100049, China *S Supporting Information ABSTRACT: Crystallization kinetics of phase change materials (PCMs) at high temperatures is of key importance for the extreme speed of data writing and erasing. In this work, the crystallization behavior of one of the typical PCMs, GeTe, has been studied using ultrafast differential scanning calorimetry (DSC) at high heating rates up to 4 × 104 Ks−1. A strong non-Arrhenius temperature-dependent viscosity has been observed. We considered two viscosity models for estimating the crystal growth kinetics ffi coe cient (Ukin). The results showed that the MYEGA model was more suitable to describe the temperature-dependent viscosity and the crystal growth kinetics for supercooled liquid GeTe. The glass transition temperature (Tg) and fragility m were estimated to be 432.1 K and 130.7, respectively. The temperature-dependent crystal growth rates, which were extrapolated by the MYEGA model, were in line with the experimental results that were measured by in situ transmission electron microscopy at a given temperature. The crystal growth rate reached a maximum of 3.5 m s−1 at 790 K. -
Optical Memristive Switches
J Electroceram DOI 10.1007/s10832-017-0072-3 Optical memristive switches Ueli Koch1 & Claudia Hoessbacher1 & Alexandros Emboras1 & Juerg Leuthold1 Received: 18 September 2016 /Accepted: 6 February 2017 # The Author(s) 2017. This article is published with open access at Springerlink.com Abstract Optical memristive switches are particularly inter- signals. Normally, the operation speed is moderate and in esting for the use as latching optical switches, as a novel op- the MHz range. The application range includes usage as a tical memory or as a digital optical switch. The optical new kind of memory which can be electrically written and memristive effect has recently enabled a miniaturization of optically read, or usage as a latching switch that only needs optical devices far beyond of what seemed feasible. The to be triggered once and that can keep the state with little or no smallest optical – or plasmonic – switch has now atomic scale energy consumption. In addition, they represent a new logical andinfactisswitchedbymovingsingleatoms.Inthisreview, element that complements the toolbox of optical computing. we summarize the development of optical memristive The optical memristive effect has been discovered only switches on their path from the micro- to the atomic scale. recently [1]. It is of particular interest because of strong Three memristive effects that are important to the optical field electro-optical interaction with distinct transmission states are discussed in more detail. Among them are the phase tran- and because of low power consumption and scalability [8]. sition effect, the valency change effect and the electrochemical Such devices rely in part on exploiting the electrical metallization. -
Optical Computing: a 60-Year Adventure Pierre Ambs
Optical Computing: A 60-Year Adventure Pierre Ambs To cite this version: Pierre Ambs. Optical Computing: A 60-Year Adventure. Advances in Optical Technologies, 2010, 2010, pp.1-15. 10.1155/2010/372652. hal-00828108 HAL Id: hal-00828108 https://hal.archives-ouvertes.fr/hal-00828108 Submitted on 30 May 2013 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Hindawi Publishing Corporation Advances in Optical Technologies Volume 2010, Article ID 372652, 15 pages doi:10.1155/2010/372652 Research Article Optical Computing: A 60-Year Adventure Pierre Ambs Laboratoire Mod´elisation Intelligence Processus Syst`emes, Ecole Nationale Sup´erieure d’Ing´enieurs Sud Alsace, Universit´e de Haute Alsace, 12 rue des Fr`eres Lumi`ere, 68093 Mulhouse Cedex, France Correspondence should be addressed to Pierre Ambs, [email protected] Received 15 December 2009; Accepted 19 February 2010 Academic Editor: Peter V. Polyanskii Copyright © 2010 Pierre Ambs. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Optical computing is a very interesting 60-year old field of research. -
Extending the Road Beyond CMOS
By James A. Hutchby, George I. Bourianoff, Victor V. Zhirnov, and Joe E. Brewer he quickening pace of MOSFET technology scaling, as seen in the new 2001 International Technology Roadmap for Semiconductors [1], is ac- celerating the introduction of many new technologies to extend CMOS Tinto nanoscale MOSFET structures heretofore not thought possible. A cautious optimism is emerging that these new technologies may extend MOSFETs to the 22-nm node (9-nm physical gate length) by 2016 if not by the end of this decade. These new devices likely will feature several new materials cleverly incorporated into new nonbulk MOSFET structures. They will be ultra fast and dense with a voracious appetite for power. Intrinsic device speeds may be more than 1 THz and integration densities will exceed 1 billion transistors per cm2. Excessive power consumption, however, will demand judicious use of these high-performance devices only in those critical paths requiring their su- perior performance. Two or perhaps three other lower performance, more power-efficient MOSFETs will likely be used to perform less performance-criti- cal functions on the chip to manage the total power consumption. Beyond CMOS, several completely new approaches to information-process- ing and data-storage technologies and architectures are emerging to address the timeframe beyond the current roadmap. Rather than vying to “replace” CMOS, one or more of these embryonic paradigms, when combined with a CMOS plat- form, could extend microelectronics to new applications domains currently not accessible to CMOS. A successful new information-processing paradigm most likely will require a new platform technology embodying a fabric of intercon- nected primitive logic cells, perhaps in three dimensions. -
Measurement of Crystal Growth Velocity in a Melt-Quenched Phase-Change Material
ARTICLE Received 26 Mar 2013 | Accepted 29 Jul 2013 | Published 29 Aug 2013 DOI: 10.1038/ncomms3371 OPEN Measurement of crystal growth velocity in a melt-quenched phase-change material Martin Salinga1, Egidio Carria1, Andreas Kaldenbach1, Manuel Bornho¨fft2, Julia Benke1, Joachim Mayer2 & Matthias Wuttig1 Phase-change materials are the basis for next-generation memory devices and reconfigurable electronics, but fundamental understanding of the unconventional kinetics of their phase transitions has been hindered by challenges in the experimental quantification. Here we obtain deeper understanding based on the temperature dependence of the crystal growth velocity of the phase-change material AgInSbTe, as derived from laser-based time-resolved reflectivity measurements. We observe a strict Arrhenius behaviour for the growth velocity over eight orders of magnitude (from B10 nm s À 1 to B1msÀ 1). This can be attributed to the formation of a glass at elevated temperatures because of rapid quenching of the melt. Further, the temperature dependence of the viscosity is derived, which reveals that the supercooled liquid phase must have an extremely high fragility (4100). Finally, the new experimental evidence leads to an interpretation, which comprehensively explains existing data from various different experiments reported in literature. 1 I. Physikalisches Institut (IA) and JARA-FIT, RWTH Aachen University, Sommerfeldstrae 14, 52074 Aachen, Germany. 2 Gemeinschaftslabor fu¨r Elektronenmikroskopie, RWTH Aachen University, Ahornstrae 55, 52074 Aachen, Germany. Correspondence and requests for materials should be addressed to M.S. (email: [email protected]). NATURE COMMUNICATIONS | 4:2371 | DOI: 10.1038/ncomms3371 | www.nature.com/naturecommunications 1 & 2013 Macmillan Publishers Limited. -
Structure of Liquid Phase Change Material Aginsbte from Density Functional/ Molecular Dynamics Simulations J
Structure of liquid phase change material AgInSbTe from density functional/ molecular dynamics simulations J. Akola, and R. O. Jones Citation: Appl. Phys. Lett. 94, 251905 (2009); View online: https://doi.org/10.1063/1.3157166 View Table of Contents: http://aip.scitation.org/toc/apl/94/25 Published by the American Institute of Physics Articles you may be interested in Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe Journal of Applied Physics 115, 063506 (2014); 10.1063/1.4865295 Nucleation of films employed in phase-change media Journal of Applied Physics 99, 064907 (2006); 10.1063/1.2184428 Crystallization kinetics of sputter-deposited amorphous AgInSbTe films Journal of Applied Physics 90, 3816 (2001); 10.1063/1.1405141 Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells Journal of Applied Physics 119, 025704 (2016); 10.1063/1.4938532 Investigation of switching region in superlattice phase change memories AIP Advances 6, 105104 (2016); 10.1063/1.4964729 Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires Applied Physics Letters 109, 213103 (2016); 10.1063/1.4968510 APPLIED PHYSICS LETTERS 94, 251905 ͑2009͒ Structure of liquid phase change material AgInSbTe from density functional/molecular dynamics simulations ͒ J. Akola1,2,3 and R. O. Jones1,a 1Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany 2Nanoscience Center, Department of Physics, P.O. Box 35, FI-40014 University of Jyväskylä, Finland 3Department of Physics, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere, Finland ͑Received 20 April 2009; accepted 28 May 2009; published online 23 June 2009͒ The liquid phase of the AgInSbTe phase change material Ag3.5In3.8Sb75.0Te17.7 has been studied using molecular dynamics/density functional simulations. -
Table of Contents
Table of Contents Schedule-at-a-Glance . 2 FiO + LS Chairs’ Welcome Letters . 3 General Information . 5 Conference Materials Access to Technical Digest Papers . 7 FiO + LS Conference App . 7 Plenary Session/Visionary Speakers . 8 Science & Industry Showcase Theater Programming . 12 Networking Area Programming . 12 Participating Companies . 14 OSA Member Zone . 15 Special Events . 16 Awards, Honors and Special Recognitions FiO + LS Awards Ceremony & Reception . 19 OSA Awards and Honors . 19 2019 APS/Division of Laser Science Awards and Honors . 21 2019 OSA Foundation Fellowship, Scholarships and Special Recognitions . 21 2019 OSA Awards and Medals . 22 OSA Foundation FiO Grants, Prizes and Scholarships . 23 OSA Senior Members . 24 FiO + LS Committees . 27 Explanation of Session Codes . 28 FiO + LS Agenda of Sessions . 29 FiO + LS Abstracts . 34 Key to Authors and Presiders . 94 Program updates and changes may be found on the Conference Program Update Sheet distributed in the attendee registration bags, and check the Conference App for regular updates . OSA and APS/DLS thank the following sponsors for their generous support of this meeting: FiO + LS 2019 • 15–19 September 2019 1 Conference Schedule-at-a-Glance Note: Dates and times are subject to change. Check the conference app for regular updates. All times reflect EDT. Sunday Monday Tuesday Wednesday Thursday 15 September 16 September 17 September 18 September 19 September GENERAL Registration 07:00–17:00 07:00–17:00 07:30–18:00 07:30–17:30 07:30–11:00 Coffee Breaks 10:00–10:30 10:00–10:30 10:00–10:30 10:00–10:30 10:00–10:30 15:30–16:00 15:30–16:00 13:30–14:00 13:30–14:00 PROGRAMMING Technical Sessions 08:00–18:00 08:00–18:00 08:00–10:00 08:00–10:00 08:00–12:30 15:30–17:00 15:30–18:30 Visionary Speakers 09:15–10:00 09:15–10:00 09:15–10:00 09:15–10:00 LS Symposium on Undergraduate 12:00–18:00 Research Postdeadline Paper Sessions 17:15–18:15 SCIENCE & INDUSTRY SHOWCASE Science & Industry Showcase 10:00–15:30 10:00–15:30 See page 12 for complete schedule of programs . -
Photonic Computing by Smit Patel What Is Photonic Computing?
PHOTONIC COMPUTING BY SMIT PATEL WHAT IS PHOTONIC COMPUTING? • Optical Computing • Photonic computers perform its computations with photons or IR beams as opposed to electron-based computation which are seen in the traditional computers. • Two types: Pure Optical Computers & Electro-Optical Hybrid ELECTRO-OPTICAL HYBRID • Use optical fibers and electric parts to read and direct data from the processor Light pulses send information instead of voltage packets. • Processors change from binary code to light pulses using lasers. • Information is then detected and decoded electronically back into binary. OPTICAL TRANSISTORS • Transistors based off the Fabry-Perot Interferometer. • Constructive interference yields a high intensity (a 1 in binary) • Destructive interference yields an intensity close to zero (a 0 in binary) HOLOGRAPHIC MEMORY • A holographic memory can store data in the form of a hologram within a crystal. • A laser is split into a reference beam and a signal beam. • Signal beam goes through the logic gate and receives information • The two beams then meet up again and interference pattern creates a hologram in the crystal. HOLOGRAPHIC MEMORY OPTICAL FIBERS • Small in size • Low transmission losses • No interference from radio frequencies, electromagnetic components, or crosstalk • Safer • More secure • Environmental immunity OPTICAL FIBERS PROS • Small size • Increased speed • Low heating • Reconfigurable • Scalable for larger or small networks • More complex functions done faster Applications for Artificial Intelligence • Less power consumption (500 microwatts per interconnect length vs. 10 mW for electrical) LIMITS OF PHOTONIC COMPUTING • Optical fibers on a chip are wider than electrical traces. • Crystals need 1mm of length and are much larger than current transistors • Software needed to design and run the computers.