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|||||||I|| US005464656A United States Patent (19) 11 Patent Number: 5,464,656 Verkade (45) Date of Patent: Nov. 7, 1995 54 METHOD OF APPLYING SINGLE-SOURCE A. H. Cowley et al., "Organometallic Chemical Vapor MOLECULAR ORGANIC CHEMICAL Deposition of III/V Compound Semiconductors with Novel WAPOR DEPOSITION AGENTS Organometallic Precursors', J. Am. Chem. Soc., 110, 6248-6249 (1988). 75 Inventor: John G. Verkade, Ames, Iowa A. H. Cowley et al., "An Aluminaphosphacubane, a New Aluminum Phosphide Precursor”, Angew. Chem. Int. Ed. 73) Assignee: Iowa State University Research Engl., 29, 1409-1410 (1990). Foundation, Inc., Ames, Iowa A. H. Cowley et al., "Preparation of Indium Antimonide Using a Single-Source Precursor”, Chem. Mater, 2, (21) Appl. No.: 253,106 221-222 (1990). (22 Filed: Jun. 2, 1994 A. H. Cowley et al., “III/V Precursors with P-H or As-H Bonds. A Low-Temperature Route to Gallium Arsenide and Related U.S. Application Data Gallium Phosphide', Organometallics, 10, 652-656 (1991). A. H. Cowley et al., “Isopropylphosphido and Arsenido 60 Division of Ser. No. 911,923, Jul. 10, 1992, Pat. No. Derivatives of Gallium and Indium. Isolation of 5,344,948, which is a continuation-in-part of Ser. No. 841, Gallium-Phosphorous and Indium-Phosphorous Dimers 589, Feb. 25, 1992, abandoned. and Trimers', Organometalics, 10, 1635-1637 (1991). (51) Int. Cl." ...................................... C23C 16/18 C. C. Cummins et al., “Trigonal-Monopyramidal M'Com 52 U.S. Cl ... 427/248.1; 427/250; 427/255.6 plexes of the Type M(NN) (M=Ti, V, Cr, Mn, Fe; 58 Field of Search .............................. 427/248.1, 255.6, NN=(tBuMeSi) NCHCHN)", Angew. Chem. Int. Ed. 427/250 Engl., 31, 1501-1503 (Dec. 1992). (56) References Cited (List continued on next page.) U.S. PATENT DOCUMENTS Primary Examiner-Shrive Beck Assistant Examiner-Bret Chen 3,994,740 11/1976 Morton ...................................... 106/65 4,885,376 12/1989 Verkade. Attorney, Agent, or Firm-Schwegman, Lundberg & Woess 5,051,533 9/1991 Verkade ...................... .............. 564/13 ne OTHER PUBLICATIONS 57 ABSTRACT C. C. Amato et al., "Gas Phase Decomposition of an Neutral single-source molecular organic precursors contain Organometallic Chemical Vapor Deposition Precursor to ing tetradentate tripodal chelating ligands are provided that AlN: Al(CH))NH), Mat. Res. Soc. Symp. Proc., are useful for the preparation of films chemical vapor 119-124 (1990). deposition. These complexes can be generally represented D. A. Atwood et al., "X-ray crystal structure of the dimeth by the formula ylgallium azide polymer and its use as a gallium nitride precursor", J. Organomet. Chem., 394, C6-C8 (1990). D. C. Bradley, "Metallo-organic Compounds containing (R), Metal-Nitrogen bonds. 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