Infrared Detectors: an Overview

Total Page:16

File Type:pdf, Size:1020Kb

Infrared Detectors: an Overview Infrared Physics & Technology 43 (2002) 187–210 www.elsevier.com/locate/infrared Infrared detectors: an overview Antoni Rogalski * Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw 49, Poland Abstract The paper presents progress in infrared (IR) detector technologies during 200 history of their development.Clas- sification of two types of IR detectors (photon detectors and thermal detectors) is done on the basis of their principle of operation.The overview of IR systems and detectors is presented.Also recent progress in different IR technologies is described.Discussion is focused mainly on current and the most rapidly developing detectors: HgCdTe heterostructure photodiodes, quantum well AlGaAs/GaAs photoresistors, and thermal detectors.The outlook for near-future trends in IR technologies is also presented. Ó 2002 Elsevier Science B.V. All rights reserved. Keywords: Photon detectors; Thermal detectors; Focal plane arrays; Two-colour detectors 1. Introduction • in 1921 Seebeck discovered the thermoelectric effect and soon thereafter demonstrated the first Looking back over the past 1000 years we no- thermocouple, tice that infrared (IR) radiation itself was un- • in 1829 Nobili constructed the first thermopile known until 200 years ago when Herschel’s by connecting a number of thermocouples in se- experiment with thermometer was first reported. ries [4], He built a crude monochromator that used a • in 1933 Melloni modified thermocouple design thermometer as a detector so that he could mea- and used bismuth and antimony for it [5]. sure the distribution of energy in sunlight.In April 1800 he wrote [1]: Thermometer No. 1 rose 7 de- Langley’s bolometer appeared in 1880 [6]. grees in 10 minutes by an exposure to the full red Langley used two thin ribbons of platinum foil, coloured rays. I drew back the stand...thermometer connected so as to form two arms of a Wheatstone 3 No. 1 rose, in 16 minutes, 88 degrees when its centre bridge.Langley continued to develop his bolome- was 1=2 inch out of the visible rays. ter for the next 20 years (400 times more sensitive The early history of IR was reviewed about 40 than his first efforts).His latest bolometer could years ago in two well-known monographs [2,3]. detect the heat from a cow at a distance of a The most important steps in development of IR quarter of mile.Thus, at the beginning the devel- detectors are the following: opment of IR detectors was connected with ther- mal detectors. The photon detectors were developed in XX * Fax: +48-22-685-9109. century.The first IR photoconductor was devel- E-mail address: [email protected] (A.Rogalski). oped by Case in 1917 [7].In 1933 Kutzscher at 1350-4495/02/$ - see front matter Ó 2002 Elsevier Science B.V. All rights reserved. PII: S1350-4495(02)00140-8 188 A. Rogalski / Infrared Physics & Technology 43 (2002) 187–210 Fig.1.History of the development of IR detectors. University of Berlin, discovered that lead sulphide class of detectors the radiation is absorbed within (from natural galena found in Sardinia) was the material by interaction with electrons.The photoconductive and had response to about 3 lm observed electrical output signal results from the [8]. changed electronic energy distribution.The pho- Many materials have been investigated in the ton detectors show a selective wavelength depen- IR field.Observing a history of the development of dence of the response per unit incident radiation the IR detector technology, a simple theorem, after power.They exhibit both perfect signal-to-noise Norton [9], can be stated: All physical phenomena performance and a very fast response.But to in the range of about 0.1–1 eV can be proposed for achieve this, the photon detectors require cryo- IR detectors.Among these effects are: thermo- genic cooling.Cooling requirements are the main electric power (thermocouples), change in elec- obstacle to the more widespread use of IR systems trical conductivity (bolometers), gas expansion based on semiconductor photodetectors making (Golay cell), pyroelectricity (pyroelectric detec- them bulky, heavy, expensive and inconvenient to tors), photon drag, Josephson effect (Joseph- use.Depending on the nature of interaction, the son junctions, SQUIDs), internal emission (PtSi class of photon detectors is further sub-divided Schottky barriers), fundamental absorption (in- into different types.The most important are: in- trinsic photodetectors), impurity absorption (ex- trinsic detectors, extrinsic detectors, photoemissive trinsic photodetectors), low-dimensional solids (metal silicide Schottky barriers) detectors, and (superlattice (SL) and quantum well (QW) detec- quantum well detectors.Table 1 shows the com- tors), different type of phase transitions, etc. parison of various IR detectors. Fig.1 gives approximate dates of significant The second class of IR detectors is composed of development efforts for the materials mentioned. thermal detectors.In a thermal detector the inci- The years during World War II saw the origins of dent radiation is absorbed to change temperature modern IR detector technology.Interest has cen- of the material, and the resultant change in some tred mainly on the wavelengths of the two atmo- physical properties is used to generate an electrical spheric windows 3–5 and 8–14 lm, though in output.The detector element is suspended on lags, recent years there has been increasing interest in which are connected to the heat sink.Thermal longer wavelengths stimulated by space applica- effects are generally wavelength independent; the tions [10]. signal depends upon the radiant power (or its rate of change) but not upon its spectral content.In pyroelectric detectors a change in the internal 2. Classification of IR detectors spontaneous polarisation is measured, whereas in the case of bolometers a change in the electrical Progress in IR detector technology is connected resistance is measured.In contrast to photon de- mainly to semiconductor IR detectors, which are tectors, the thermal detectors typically operate at included in the class of photon detectors.In this room temperature.They are usually characterized A. Rogalski / Infrared Physics & Technology 43 (2002) 187–210 189 Table 1 Comparison of IR detectors (after Ref.[11]) Detector type Advantages Disadvantages Thermal Light, rugged, reliable, and low cost Low detectivity at high frequency Room temperature operation Slow response (ms order) Photon Intrinsic IV–VI Available low-gap materials Poor mechanical Well studied Large permittivity II–VI Easy band-gap tailoring Non-uniformity over large area Well-developed theory and exp.High cost in growth and processing Multicolour detectors III–V Good material and dopants Heteroepitaxy with large lattice mismatch Advanced technology Possible monolithic integration Extrinsic Very long wavelength operation Extremely low temperature operation Relatively simple technology Free carriers Low-cost, high yields Low quantum efficiency Large and close packed 2D arrays Low temperature operation Quantum wells Type I Matured material growth Low quantum efficiency Good uniformity over large area Complicated design and growth Multicolour detectors Type II Low Auger recombination rate Complicated design and growth Easy wavelength control Sensitive to the interfaces by modest sensitivity and slow response but they best values of NEDT, below 0.1 K, could be are cheap and easy to use.The greatest utility in reached because effective noise bandwidths < 100 IR technology has found bolometers, pyroelectric Hz can be achieved. detectors and thermopiles. Uncooled, monolithic focal plane arrays (FPAs) Up till the nineties, thermal detectors have been fabricated from thermal detectors may revolutio- considerably less exploited in commercial and nise development of thermal imagers.Recently, military systems in comparison with photon de- very encouraging results have been obtained with tectors.The reason for this disparity is that ther- micromachined silicon bolometer [10,12] and py- mal detectors are popularly believed to be rather roelectric detector arrays [10,13]. slow and insensitive in comparison with photon detectors.As a result, the worldwide effort to de- velop thermal detectors was extremely small rela- tive to that of photon detector.In the last decade 3. Focal plane arrays however, it has been shown that extremely good imagery can be obtained from large thermal de- There are a number of architectures used in the tector arrays operating uncooled at TV frame development of IR FPAs.In general, they may be rates.The speed of thermal detectors is quite ad- classified as hybrid and monolithic.The central equate for non-scanned imagers with two-dimen- design questions involve performance advantages sional (2D) detectors.The moderate sensitivity of versus ultimate producibility.Each application thermal detectors can be compensated by a large may favour a different approach depending on number of elements in 2D electronically scanned the technical requirements, projected costs, and arrays.With large arrays of thermal detectors the schedule. 190 A. Rogalski / Infrared Physics & Technology 43 (2002) 187–210 In the monolithic approach, some of the mul- ogy with Schottky-barrier detectors is the only tiplexing is done in the detector material itself than technology, which has matured to a level of in an external readout circuit.The basic element of practical use. a monolithic array is a metal–insulator–semicon- Hybrid FPAs detectors and multiplexers are ductor (MIS) structure as shown in Fig.2(c).A fabricated on different substrates and mated with MIS capacitor detects and integrates the IR-gen- each other by the flip-chip bonding (Fig.3) or erated photocurrent.Although efforts have been loophole interconnection.In this case we can op- made to develop monolithic FPAs using narrow- timise the detector material and multiplexer inde- gap semiconductors, silicon-based FPA technol- pendently.Other advantages of the hybrid FPAs Fig. 2. Monolithic IR FPAs: (a) all-silicon; (b) heteroepitaxy-on-silicon; (c) non-silicon (e.g., HgCdTe CCD) (after Ref. [14]). Fig.3.Hybrid IR FPA with independently optimised signal detection and readout: (a) indium bump technique, (b) loophole tech- nique.
Recommended publications
  • Trends in Performance Limits of the HOT Infrared Photodetectors
    applied sciences Review Trends in Performance Limits of the HOT Infrared Photodetectors Antoni Rogalski 1, Piotr Martyniuk 1,*, Małgorzata Kopytko 1 and Weida Hu 2 1 Faculty of Advanced Technologies and Chemistry, Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland; [email protected] (A.R.); [email protected] (M.K.) 2 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China; [email protected] * Correspondence: [email protected]; Tel.: +48-26-183-92-15 Abstract: The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 µm) range is required to reach high performance. This is a major obstacle for more extensive use of IR technology. Focal plane arrays (FPAs) based on thermal detectors are presently used in staring thermal imagers operating at room temperature. However, their performance is modest; thermal detectors exhibit slow response, and the multispectral detection is difficult to reach. Initial efforts to develop high operating temperature (HOT) photodetectors were focused on HgCdTe photoconductors and photoelectromagnetic detectors. The technological efforts have been lately directed on advanced heterojunction photovoltaic HgCdTe detectors. This paper presents the several approaches to increase the photon-detectors room-temperature performance. Various kinds of materials are considered: HgCdTe, type-II AIIIBV superlattices, two-dimensional materials and colloidal quantum dots. Keywords: HOT IR detectors; HgCdTe; P-i-N; BLIP condition; 2D material photodetectors; colloidal quantum dot photodetectors Citation: Rogalski, A.; Martyniuk, P.; Kopytko, M.; Hu, W.
    [Show full text]
  • High Speed Infrared Cameras Enable Demanding Thermal Imaging Applications
    Electrophysics Resource Center Scientific Imaging White Paper High Speed Infrared Cameras Enable Demanding Thermal Imaging Applications Written by Josh White [email protected] www.electrophysics.com/infrared-cameras High Speed Infrared Cameras Enable Demanding Electrophysics Resource Center: Thermal Imaging Applications Scientific Imaging High Speed Infrared Cameras Enable Demanding Thermal Imaging Applications Introduction Recent developments in cooled mercury cadmium telluride (MCT or HgCdTe) infrared detector technology have made possible the development of high performance infrared cameras for use in a wide variety of demanding thermal imaging applications. These infrared Contents: cameras are now available with spectral sensitivity in the short- wave, mid-wave and long-wave spectral bands or alternatively in Introduction two bands. In addition, a variety of camera resolutions are available 1. Infrared Spectral Sensitivity Bands as a result of mid-size and large-size detector arrays and various 2. Image Resolution and Field-of-View pixel sizes. Also, camera features now include high frame rate 2.1 Detector arrays and pixel sizes imaging, adjustable exposure time and event triggering enabling 2.2 Infrared lens characteristics the capture of temporal thermal events. Sophisticated processing 3. High Speed Camera Features algorithms are available that result in an expanded dynamic range 3.1 Short exposure times to avoid saturation and optimize sensitivity. These infrared cameras 3.2 High frame rates can be calibrated so that the output digital values correspond to 3.3 Dynamic range expansion object temperatures. Non-uniformity correction algorithms are 3.4 Event triggering 3.5 Calibration: Non-uniformity included that are independent of exposure time. These performance correction and radiometry capabilities and camera features enable a wide range of thermal 4.
    [Show full text]
  • Uncooled Infrared Photon Detection Concepts and Devices
    Georgia State University ScholarWorks @ Georgia State University Physics and Astronomy Dissertations Department of Physics and Astronomy 3-23-2009 Uncooled Infrared Photon Detection Concepts and Devices Viraj Vishwakantha Jayaweera Piyankarage Follow this and additional works at: https://scholarworks.gsu.edu/phy_astr_diss Part of the Astrophysics and Astronomy Commons, and the Physics Commons Recommended Citation Piyankarage, Viraj Vishwakantha Jayaweera, "Uncooled Infrared Photon Detection Concepts and Devices." Dissertation, Georgia State University, 2009. https://scholarworks.gsu.edu/phy_astr_diss/30 This Dissertation is brought to you for free and open access by the Department of Physics and Astronomy at ScholarWorks @ Georgia State University. It has been accepted for inclusion in Physics and Astronomy Dissertations by an authorized administrator of ScholarWorks @ Georgia State University. For more information, please contact [email protected]. UNCOOLED INFRARED PHOTON DETECTION CONCEPTS AND DEVICES by VIRAJ VISHWAKANTHA JAYAWEERA PIYANKARAGE Under the Direction of Unil Perera ABSTRACT This work describes infrared (IR) photon detector techniques based on novel semiconductor device concepts and detector designs. The aim of the investigation was to examine alternative IR detection concepts with a view to resolve some of the issues of existing IR detectors such as operating temperature and response range. Systems were fabricated to demonstrate the following IR detection concepts and determine detector parameters: (i) Near-infrared (NIR) detection based on dye-sensitization of nanostructured semiconductors, (ii) Displacement currents in semiconductor quantum dots (QDs) embedded dielectric media, (iii) Split-off band transitions in GaAs/AlGaAs heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors. A far-infrared detector based on GaSb homojunction interfacial workfunction internal photoemission (HIWIP) structure is also discussed.
    [Show full text]
  • A High-Speed Differential Thermographic Camera
    A High-Speed Differential Thermographic Camera Jon R. Lesniak Bradley R. Boyce Stress Photonics Inc. 565 Science Drive Madison, WI 53711 Abstract digital processing, provides instantaneous stress images under most common structural loading. Advanced infrared array-detector technology and high-speed digital processing have been combined to dramatically Thermoelastic Stress Analysis, TSA is able to image improve the applicability of thermoelastic stress analysis. dynamic stresses in a structure by measuring the small Details of the implementation of a 128 x 128 InSb focal- temperature changes that occur when a material is plane-array detector for imaging dynamic stresses in compressed or expanded. The magnitude of these changes is structures is described. A comparison of system design generally quite small, in steel for instance 1.0 mK is the parameters between single-detector scanning systems and equivalent of a stress change of 1.0 MPa (150 psi). Only staring-array systems describe the orders of magnitude the exquisite sensitivity of modern detectors combined with improvement in imaging speed provided by array sophisticated electronics and signal processing has made it technology. Performance parameters are explained for a possible to design imaging systems that provide a useful broad range of specimen temperatures showing the ease with level of thermal, and hence, stress resolution. which the array system can be adapted for elevated temperature stress analysis and material characterization. A newly developed system can reduce average acquisition time for a TSA image from 30 minutes to 15 seconds. Signal-to-noise calculations presented in this paper indicate Introduction that a factor of 1600 speed improvement is obtainable.
    [Show full text]
  • History of Infrared Detectors
    OPTO−ELECTRONICS REVIEW 20(3), 279–308 DOI: 10.2478/s11772−012−0037−7 History of infrared detectors A. ROGALSKI* Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00–908 Warsaw, Poland This paper overviews the history of infrared detector materials starting with Herschel’s experiment with thermometer on February 11th, 1800. Infrared detectors are in general used to detect, image, and measure patterns of the thermal heat radia− tion which all objects emit. At the beginning, their development was connected with thermal detectors, such as ther− mocouples and bolometers, which are still used today and which are generally sensitive to all infrared wavelengths and op− erate at room temperature. The second kind of detectors, called the photon detectors, was mainly developed during the 20th Century to improve sensitivity and response time. These detectors have been extensively developed since the 1940’s. Lead sulphide (PbS) was the first practical IR detector with sensitivity to infrared wavelengths up to ~3 μm. After World War II infrared detector technology development was and continues to be primarily driven by military applications. Discovery of variable band gap HgCdTe ternary alloy by Lawson and co−workers in 1959 opened a new area in IR detector technology and has provided an unprecedented degree of freedom in infrared detector design. Many of these advances were transferred to IR astronomy from Departments of Defence research. Later on civilian applications of infrared technology are frequently called “dual−use technology applications.” One should point out the growing utilisation of IR technologies in the civilian sphere based on the use of new materials and technologies, as well as the noticeable price decrease in these high cost tech− nologies.
    [Show full text]
  • 2D Materials in Infrared Detector Family †
    Proceedings 2D Materials in Infrared Detector Family † Antoni Rogalski Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland; [email protected] † Presented at the 15th International Workshop on Advanced Infrared Technology and Applications (AITA 2019), Florence, Italy, 17–19 September 2019. Published: 26 September 2019 Abstract: The paper compares two-dimensional (2D) material detectors performance with traditionally and commercially available ones operating in high temperature conditions. The most effective single graphene detectors are THz detectors which utilize plasma rectification phenomena in FETs. Most of 2D layered semiconducting material photodetectors operate at the visible and near-infrared regions and generally their high sensitivity does not coincide with a fast response time, which limits real detector functions. Keywords: 2D materials; infrared and terahertz detectors; detector performance 1. Introduction This paper gathers performance data of different types of single 2D material-based infrared (IR) and terahertz (THz) detectors. Their performance is compared with existing mature material systems including HgCdTe, InGaAs, III-V compounds and microbolometers. The intent is to concentrate on device architectures that can have the most impact on future position in wide high operating temperature (HOT) IR and THz detector family. 2. Graphene-Based Detectors Graphene detectors can be divided into two categories: either photon and thermal (the bolometer effect) detectors. The majority of graphene pristine photodetectors exploit graphene metal junctions, graphene p-n junctions, and FET transistors. The most recent approach also employs the photo-thermoelectric (PTE) effect (Seebeck effect) to create an electric field due to electron diffusion into metal contacts.
    [Show full text]
  • Imaging Infrared Detectors II
    Imaging Infrared Detectors II Study Leader: R. Westervelt Contributors Include: H. Abarbanel R.Garwin R.Jeanloz J. Kimble J.Sullivan E. Williams October 2000 JSR-97-600 Approved for public release; distribution unlimited. JASON .The MITRE Corporation 1820 Dolley Madison Boulevard Mclean, V"lfginia 22102-3481 (703) 883-6997 Contents 1 INTRODUCTION 1 2 IMAGE CHARACTERIZATION 5 3 UNCOOLED MICROBOLOMETER ARRAYS 11 4 QUANTUM WELL INFRARED PHOTODETECTORS 17 5 HgCdTe PHOTODETECTOR ARRAYS 21 6 DEVELOPMENTS 23 A FUNDAMENTALS OF INFRARED DETECTOR PERFOR­ MANCE 27 A.I Blackbody Radiation . .. 27 A.2 Temperature of Operation . .. 33 B APPENDIX: IMAGING BOLOMETER ARRAYS 43 B.I Bolometer Noise. 44 B.2 Comparison of Bolometers with Quantum Detectors. 47 B.3 Responsitivity. 49 C APPENDIX: THERMOELECTRIC MATERIALS 53 D APPENDIX: WORKSHOP PARTICIPANTS 65 III 1 INTRODUCTION JASON has been tasked by the Army to review recent progress in in­ frared detector technology and to update the earlier JASON report "Imaging Infrared Detectors" (JSR-91-600). To this end, a workshop was conducted during the 1997 Summer Study with distinguished participants drawn from industry, academia, and government, listed in Appendix D. Through dis­ cussions with workshop participants and the JASONs an updated overview of the state of imaging infrared detector technology was developed, and is presented in the body of this report as follows: Section 2 (Image Character­ ization); Section 3 (Uncooled Microbolometer Arrays); Section 4 (Quantum Well Infrared Photo detectors ); Section 5 (HgCdTe Photodetector Arrays); and Section 6 (New Developments). Appendices to the original report con­ tained primers on infrared basics, which have been proven to be useful.
    [Show full text]
  • Nano-Thermoelectric Infrared Bolometers
    1 (20) This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in APL Photonics 6, 036111 (2021) and may be found at https://doi.org/10.1063/5.0040534. Nano-Thermoelectric Infrared Bolometers Aapo Varpulaa), Kirsi Tappura, Jonna Tiira, Kestutis Grigoras, Olli-Pekka Kilpi, Kuura Sovanto, Jouni Ahopelto, and Mika Prunnilaa) VTT Technical Research Centre of Finland Ltd, Tietotie 3, FI-02150 Espoo, Finland a) Authors to whom correspondence should be addressed: [email protected] and [email protected] Abstract Infrared (IR) radiation detectors are used in numerous applications from thermal imaging to spectroscopic gas sensing. Obtaining high speed and sensitivity, low-power operation and cost-effectiveness with a single technology remains to be a challenge in the field of IR sensors. By combining nano-thermoelectric transduction and nanomembrane photonic absorbers, we demonstrate uncooled IR bolometer technology that is material-compatible with large-scale CMOS fabrication and provides fast and high sensitivity response to long-wavelength IR (LWIR) around 10 µm. The fast operation speed stems from the low heat capacity metal layer grid absorber connecting the sub-100 nm-thick n- and p-type Si nano-thermoelectric support beams, which convert the radiation induced temperature rise into voltage. The nano-thermoelectric transducer-support approach benefits from enhanced phonon surface scattering in the beams leading to reduction in thermal conductivity, which enhances the sensitivity. We demonstrate different size nano- thermoelectric bolometric photodetector pixels with LWIR responsitivities, specific detectivities and time constants in the ranges 179 – 2930 V/W, 0.15 – 3.1·108 cmHz1/2/W and 66 – 3600 µs, respectively.
    [Show full text]
  • Advanced Thermal Imaging Cameras for R&D and Science Applications
    Advanced thermal imaging cameras for R&D and Science applications Institutional R&D Non Destructive Testing Lock-In Thermography Multi-spectral analysis Range Phenomenology Medical FLIR: The world leader in thermal imaging cameras FLIR is the world leader in the design, manufacturing Rapidly emerging markets and organisation and marketing of thermal imaging systems for a wide Interest for thermal imaging has grown considerably variety of commercial, industrial and government over the last few years in a large variety of markets. applications. To face this increased demand, FLIR has expanded its organisation drastically. Today we employ FLIR thermal imaging systems use state-of-the-art more than 3,200 people. Together, these infrared infrared imaging technology that detects infrared specialists realise a consolidated annual turnover of radiation - or heat. Based on detected temperature more than 1 billion US dollars. This makes FLIR the differences, thermal imaging cameras can create largest manufacturer of commercial thermal imaging a crisp image. Advanced algorithms also make it cameras in the world. possible to read correct temperature values from this image. We design and manu facture all of the Manufacturing capabilities critical technologies inside our products, including FLIR currently operates 6 manufacturing plants: three detectors, electronics, and special lenses ourselves. in the USA (Portland, Boston and Santa Barbara, California) one in Stockholm, Sweden, one in Estonia and FLIR ATS - Advanced Thermal Solutions, near Paris, at Marne la Vallée. More than a camera, a complete solution There is more to the world of thermal imaging than building a camera. FLIR is not only committed to providing you with the best camera, we are also able FLIR, Stockholm FLIR ATS, France to offer you the best software, service and training to suit your thermal imaging needs.
    [Show full text]
  • History of Infrared Detectors
    OPTO−ELECTRONICS REVIEW 20(3), 279–308 DOI: 10.2478/s11772−012−0037−7 History of infrared detectors A. ROGALSKI* Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00–908 Warsaw, Poland This paper overviews the history of infrared detector materials starting with Herschel’s experiment with thermometer on February 11th, 1800. Infrared detectors are in general used to detect, image, and measure patterns of the thermal heat radia− tion which all objects emit. At the beginning, their development was connected with thermal detectors, such as ther− mocouples and bolometers, which are still used today and which are generally sensitive to all infrared wavelengths and op− erate at room temperature. The second kind of detectors, called the photon detectors, was mainly developed during the 20th Century to improve sensitivity and response time. These detectors have been extensively developed since the 1940’s. Lead sulphide (PbS) was the first practical IR detector with sensitivity to infrared wavelengths up to ~3 μm. After World War II infrared detector technology development was and continues to be primarily driven by military applications. Discovery of variable band gap HgCdTe ternary alloy by Lawson and co−workers in 1959 opened a new area in IR detector technology and has provided an unprecedented degree of freedom in infrared detector design. Many of these advances were transferred to IR astronomy from Departments of Defence research. Later on civilian applications of infrared technology are frequently called “dual−use technology applications.” One should point out the growing utilisation of IR technologies in the civilian sphere based on the use of new materials and technologies, as well as the noticeable price decrease in these high cost tech− nologies.
    [Show full text]
  • Polycrystalline Lead Selenide: the Resurgence of an Old Infrared Detector
    OPTO-ELECTRONICS REVIEW 15(2), 110–117 DOI: 10.2478/s11772-007-0007-7 Polycrystalline lead selenide: the resurgence of an old infrared detector G. VERGARA*, M.T. MONTOJO, M.C. TORQUEMADA, M.T. RODRIGO, F.J. SÁNCHEZ, L.J. GÓMEZ, R.M. ALMAZÁN, M. VERDÚ, P. RODRÍGUEZ, V. VILLAMAYOR, M. ÁLVAREZ, J. DIEZHANDINO, J. PLAZA, and I. CATALÁN Centro de Investigación y Desarrollo de la Armada (CIDA), Arturo Soria 289, 28033 Madrid, Spain The existing technology for uncooled MWIR photon detectors based on polycrystalline lead salts is stigmatized for being a 50-year-old technology. It has been traditionally relegated to single-element detectors and relatively small linear arrays due to the limitations imposed by its standard manufacture process based on a chemical bath deposition technique (CBD) devel- oped more than 40 years ago. Recently, an innovative method for processing detectors, based on a vapour phase deposition (VPD) technique, has allowed manufacturing the first 2D array of polycrystalline PbSe with good electro optical character- istics. The new method of processing PbSe is an all silicon technology and it is compatible with standard CMOS circuitry. In addition to its affordability, VPD PbSe constitutes a perfect candidate to fill the existing gap in the photonic and uncooled IR imaging detectors sensitive to the MWIR photons. The perspectives opened are numerous and very important, converting the old PbSe detector in a serious alternative to others uncooled technologies in the low cost IR detection market. The num- ber of potential applications is huge, some of them with high commercial impact such as personal IR imagers, enhanced vi- sion systems for automotive applications and other not less important in the security/defence domain such as sensors for ac- tive protection systems (APS) or low cost seekers.
    [Show full text]
  • Interview with Paul W. Kruse on the Early History of Hgcdte, Conducted on October 22, 1980
    Journal of ELECTRONIC MATERIALS, Vol. 44, No. 9, 2015 DOI: 10.1007/s11664-015-3737-1 Ó 2015 The Minerals, Metals & Materials Society Interview with Paul W. Kruse on the Early History of HgCdTe, Conducted on October 22, 1980 MARION B. REINE1,2 1.—Photon Detector Physics, LLC, Cambridge, MA 02138, USA. 2.—e-mail: marion.reine@ comcast.net This paper presents an interview with Dr Paul W. Kruse (1927–2012) on the early history of the semiconductor alloy mercury cadmium telluride (HgCdTe or Hg1ÀxCdxTe) at the Honeywell Corporate Research Center near Min- neapolis, Minnesota. Conducted on October 22, 1980, the interview covers two main areas. One area is the story of how the HgCdTe research effort came about at the Honeywell Research Center in the early 1960s, what technical choices were made and when, and what technical challenges were overcome and how. The other area is the organization, culture, environment and personnel at the Honeywell Research Center that made the early HgCdTe research programs so successful. HgCdTe has emerged as the highest-per- formance, most widely applicable infrared detector material. HgCdTe con- tinues to satisfy a broad variety of advanced military and space applications. It is illustrative to look back on the early history of this remarkable semi- conductor alloy to help to understand why its technological development as an infrared detector has been so successful. Key words: Mercury cadmium telluride, HgCdTe, infrared detector, semiconductor, history of infrared detectors INTRODUCTION This group filed a patent
    [Show full text]