Interview with Paul W. Kruse on the Early History of Hgcdte, Conducted on October 22, 1980
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(12) United States Patent (10) Patent No.: US 9,543,378 B2 Singh (45) Date of Patent: Jan
USO09543378B2 (12) United States Patent (10) Patent No.: US 9,543,378 B2 Singh (45) Date of Patent: Jan. 10, 2017 (54) SEMICONDUCTOR DEVICES AND USPC ........................................... 257/25, 347, 402 FABRICATION METHODS THEREOF See application file for complete search history. (71) Applicant: GLOBALFOUNDRIES Inc., Grand (56) References Cited Cayman (KY) U.S. PATENT DOCUMENTS (72) Inventor: Jagar Singh, Clifton Park, NY (US) 4,940,671 A * 7/1990 Small ................ HO1L 21,82285 257 (491 (73) Assignee: GLOBALFOUNDRIES INC., Grand 8,610,241 B1* 12/2013 Hu ...................... HOL 270629 Cayman (KY) 257,353 2004/0095698 A1* 5, 2004 Gerrish ............... HOL27/O255 *) Notice: Subject to anyy disclaimer, the term of this 361 (91.1 patent is extended or adjusted under 35 2004/0253779 A1* 12/2004 Hong ............... HOL 21,8249 U.S.C. 154(b) by 10 days. 438,203 (21) Appl. No.: 14/467,420 * cited by examiner Primary Examiner — Kenneth Parker (22) Filed: Aug. 25, 2014 Assistant Examiner — Warren H Kilpatrick (65) Prior Publication Data (74) Attorney, Agent, or Firm — Heslin Rothenberg Farley & Mesiti P.C.; Kristian E. Ziegler US 2016/OO56231 A1 Feb. 25, 2016 (57) ABSTRACT (51) Int. Cl. Semiconductor devices and fabrication methods thereof are HOIL 29/06 (2006.01) provided. The semiconductor devices include: a substrate, HOIL 29/66 (2006.01) the Substrate including a p-type well adjoining an n-type HOIL 29/735 (2006.01) well; a first p-type region and a first n-type region disposed HOIL 29/47 (2006.01) within the n-type well of the substrate, where the first p-type HOIL 29/423 (2006.01) region at least partially encircles the first n-type region; and HOIL 29/08 (2006.01) a second p-type region and a second n-type region disposed HOIL 29/10 (2006.01) in the p-type well of the substrate, where the second n-type (52) U.S. -
221 Gaas GRADED A
USOO6403874B1 (12) United States Patent (10) Patent No.: US 6,403,874 B1 Shakouri et al. (45) Date of Patent: *Jun. 11, 2002 (54) HIGH-EFFICIENCY HETEROSTRUCTURE OTHER PUBLICATIONS THERMONIC COOLERS N N. W. Ashcroft, et al., Solid State Physics, manual, 1976, pp. (75) Inventors: Ali Shakouri, Santa Cruz; John E. 318-319, 320-321, 362-363. Bowers, Santa Barbara, both of CA D. A. Broido et al., “Effect of Superlattice structure on the (US) th ermoelectriclectric fiIlgure OIf meril:t: , Theline Am erican PhPinySIca 1 Society (Physical Review B.), vol. 51, No. 19, May 15, (73) Assignee: The Regents of the University of 1995, pp. 13797-800. California, Oakland, CA (US) D. A. Broido et al., “Comment of Use of quantum well Superlattices to obtain high figure of merit from nonconven (*) Notice: Subject to any disclaimer, the term of this tional thermoelectric materials”, Appl. Phys. Lett. 63, 3230 patent is extended or adjusted under 35 (1993), Applied Physics Letters, vol. 67, No. 8, Aug. 21, U.S.C. 154(b) by 0 days. 1995, pp. 1170–1171. D. A. Broido et al., “Thermoelectric figure or merit of This patent is Subject to a terminal dis- quantum wire Superlattices”, Applied Physics Letters, Jul. 3, claimer. 1995, vol. 67, No. 1, 100-102. (21) Appl. No.: 09/441,787 (List continued on next page.) (22) Filed: Nov. 17, 1999 Primary Examiner—Bruce F. Bell ASSistant Examiner Thomas H Parsons Related U.S. Application Data (74) Attorney, Agent, or Firm-Gates & Cooper LLP (60) Pisional application No. 60/109,342, filed on Nov. -
Growthmechanismand Characteristics of Semiconductor Nanowires For
www.symbiosisonline.org Symbiosis www.symbiosisonlinepublishing.com Research Article Nanoscience & Technology: Open Access Open Access Growth Mechanism and Characteristics of Semiconductor Nanowires for Photonic Devices N. B Singh1, S. R Coriell1, Matthew King2, Brian Wagner2, David Kahler2, David Knuteson2, Andre Berghman2 and Sean McLaughlin2 1University of Maryland Baltimore County, 1000 Hilltop Circle, Baltimore, MD 21250 2Northrop Grumman Corporation ES, 1212 Winterson Road, Linthicum, MD 21250 Received: March 31, 2014; Accepted: April 27, 2014; Published: April 29, 2014 *Corresponding author: N. B Singh, University of Maryland Baltimore County, 1000 Hilltop Circle, Baltimore, MD 21250 photodiodes (A Abstract photon counting applications. These arecapable of low-light An overview on the growth mechanism of nanowire, fabrication detectionand havePDs) great are potentialvery capable for the detectors variety ofin applications. finding and and performance of selenide nanowires devices is presented. Growth of nano particles and preliminary results on the formation Binary, ternary and quaternary selenides have relatively low optical of nanowires of lead selenide is reported. Results are presented for the zinc selenide nanowire based devices, performance and combination of properties of selenides makes them very important materialsabsorption for coefficient detector andapplications. have wide Lead transparency selenide (PbSe)range. nanoThis particles and nanowires were grown by the physical vapor transport to device arrays. (PVT) method and zinc selenide (ZnSe) nanowire was grown by more specifically the ability to transition from single NW devices chemical vapor transport (CVT) methods. Observations on the growth Experimental Method of PbSe indicate that oriented attachment of nanocrystal building Materials purification blocks produces nanowires. On silicon (111) substrates binding was observed to be on (001) and (111) faces. -
Journal of Materials Chemistry C Rscpublishing COMMUNICATION
Journal of Materials Chemistry C RSCPublishing COMMUNICATION The room temperature phosphine-free organometallic synthesis of near-infrared emitting Cite this: DOI: 10.1039/x0xx00000x HgSe quantum dots H. Mirzai,a M. N. Nordin,b,c R. J. Curry,b J.-S. Bouillard,a A. V. Zayats,a M. a Received 00th January 2012, Green* Accepted 00th January 2012 DOI: 10.1039/x0xx00000x Luminescent mercury selenide (HgSe) quantum dots have been synthesised by a phosphine- free method using oleic acid as a capping agent. The modification of experimental conditions www.rsc.org/ such as temperature resulted in particles of various sizes (15 - 100 nm) and morphologies not previously seen in HgSe, with emission tuneable between 1000 nm and 1350 nm. The popularity of semiconductor quantum dots (QDs) and b Advanced Technology Institute, Department of Electronic Engineering, their association with next-generation opto-electronic devices University of Surrey, Guildford, Surrey.UK GU2 7XH c and biomedical applications has grown rapidly over the last Present address: Medical Engineering Technology Department, University Kuala Lumpur, 53100, Gombak, Malaysia. years. Current research focuses on various synthetic routes as a means to modify QD characteristics to satisfy specific due to the lack of obvious and safe precursors (despite the optical and magnetic requirements for applications such as fact that many early routes to nano-dispersed semiconductors biological imaging,1 telecommunications,2 photodetection3 4 were based on mercury chalcogenides). We have focused on and solar energy. Quantum dots have provided a new source mercury chalcogenides due to their low reaction temperatures of electromagnetic radiation on the nano-scale. -
Properties of Sputtered Mercury Telluride Contacts on P-Type Cadmium Telluride A
Properties of sputtered mercury telluride contacts on p-type cadmium telluride A. Zozime, C. Vermeulin To cite this version: A. Zozime, C. Vermeulin. Properties of sputtered mercury telluride contacts on p-type cadmium telluride. Revue de Physique Appliquée, Société française de physique / EDP, 1988, 23 (11), pp.1825- 1835. 10.1051/rphysap:0198800230110182500. jpa-00246011 HAL Id: jpa-00246011 https://hal.archives-ouvertes.fr/jpa-00246011 Submitted on 1 Jan 1988 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Revue Phys. Appl. 23 (1988) 1825-1835 NOVEMBRE 1988, 1825 Classification Physics Abstracts 73.40 - 79.20 Properties of sputtered mercury telluride contacts on p-type cadmium telluride A. Zozime and C. Vermeulin Laboratoire de Physique des Matériaux, CNRS, 1 place A. Briand, 92195 Meudon Cedex, France (Reçu le 12 avril 1988, révisé le 29 juillet 1988, accepté le 16 août 1988) Résumé. 2014 La valeur élevée du travail de sortie du composé semi-métallique HgTe (q03A6m ~ 5.9 eV) a conduit à utiliser ce matériau pour réaliser des contacts ohmiques de faible résistance spécifique 03C1c (03A9 cm2) sur le composé semi-conducteur II-VI CdTe de type p, dans la gamme des résistivités 70 03A9 cm 03C1B 45 k03A9 cm. -
Trends in Performance Limits of the HOT Infrared Photodetectors
applied sciences Review Trends in Performance Limits of the HOT Infrared Photodetectors Antoni Rogalski 1, Piotr Martyniuk 1,*, Małgorzata Kopytko 1 and Weida Hu 2 1 Faculty of Advanced Technologies and Chemistry, Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland; [email protected] (A.R.); [email protected] (M.K.) 2 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China; [email protected] * Correspondence: [email protected]; Tel.: +48-26-183-92-15 Abstract: The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 µm) range is required to reach high performance. This is a major obstacle for more extensive use of IR technology. Focal plane arrays (FPAs) based on thermal detectors are presently used in staring thermal imagers operating at room temperature. However, their performance is modest; thermal detectors exhibit slow response, and the multispectral detection is difficult to reach. Initial efforts to develop high operating temperature (HOT) photodetectors were focused on HgCdTe photoconductors and photoelectromagnetic detectors. The technological efforts have been lately directed on advanced heterojunction photovoltaic HgCdTe detectors. This paper presents the several approaches to increase the photon-detectors room-temperature performance. Various kinds of materials are considered: HgCdTe, type-II AIIIBV superlattices, two-dimensional materials and colloidal quantum dots. Keywords: HOT IR detectors; HgCdTe; P-i-N; BLIP condition; 2D material photodetectors; colloidal quantum dot photodetectors Citation: Rogalski, A.; Martyniuk, P.; Kopytko, M.; Hu, W. -
Bandgap-Engineered Hgcdte Infrared Detector Structures for Reduced Cooling Requirements
Bandgap-Engineered HgCdTe Infrared Detector Structures for Reduced Cooling Requirements by Anne M. Itsuno A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Electrical Engineering) in The University of Michigan 2012 Doctoral Committee: Associate Professor Jamie D. Phillips, Chair Professor Pallab K. Bhattacharya Professor Fred L. Terry, Jr. Assistant Professor Kevin P. Pipe c Anne M. Itsuno 2012 All Rights Reserved To my parents. ii ACKNOWLEDGEMENTS First and foremost, I would like to thank my research advisor, Professor Jamie Phillips, for all of his guidance, support, and mentorship throughout my career as a graduate student at the University of Michigan. I am very fortunate to have had the opportunity to work alongside him. I sincerely appreciate all of the time he has taken to meet with me to discuss and review my research work. He is always very thoughtful and respectful of his students, treating us as peers and valuing our opinions. Professor Phillips has been a wonderful inspiration to me. I have learned so much from him, and I believe he truly exemplifies the highest standard of teacher and technical leader. I would also like to acknowledge the past and present members of the Phillips Research Group for their help, useful discussions, and camaraderie. In particular, I would like to thank Dr. Emine Cagin for her constant encouragement and humor. Emine has been a wonderful role model. I truly admire her expertise, her accom- plishments, and her unfailing optimism and can only hope to follow in her footsteps. I would also like to thank Dr. -
Measurement and Application of Optical Nonlinearities in Indium Phosphide, Cadmium Mercury Telluride and Photonic Crystal Fibres
MEASUREMENT AND APPLICATION OF OPTICAL NONLINEARITIES IN INDIUM PHOSPHIDE, CADMIUM MERCURY TELLERIDE AND PHOTONIC CRYSTAL FIBRES Trefor James Sloanes A Thesis Submitted for the Degree of DEng at the University of St. Andrews 2009 Full metadata for this item is available in the St Andrews Digital Research Repository at: https://research-repository.st-andrews.ac.uk/ Please use this identifier to cite or link to this item: http://hdl.handle.net/10023/723 This item is protected by original copyright Measurement and Application of Optical Nonlinearities in Indium Phosphide, Cadmium Mercury Telluride and Photonic Crystal Fibres This thesis is presented in application for the degree of Doctor of Engineering to the University of St. Andrews by Trefor James Sloanes I, Trefor James Sloanes, hereby certify that this thesis, which is approximately 28,500 words in length, has been written by me, that it is the record of work carried out by me and that it has not been submitted in any previous application for a higher degree. I was admitted as a research student in October, 2003 and as a candidate for the degree of Doctor of Engineering in August, 2004; the higher study for which this is a record was carried out in the University of St Andrews between 2003 and 2008. date ……………… signature of candidate ……………… I hereby certify that the candidate has fulfilled the conditions of the Resolution and Regulations appropriate for the degree of Doctor of Engineering in the University of St Andrews and that the candidate is qualified to submit this thesis in application for that degree. -
Functions and Cellular Localization of Cysteine Desulfurase And
Functions and cellular localization of cysteine desulfurase and selenocysteine lyase in Trypanosoma brucei Pavel Poliak1, Douglas Van Hoewyk2, Miroslav Obornı´k1, Alena Zı´kova´ 1,3, Kenneth D. Stuart3, Jan Tachezy4, Marinus Pilon5 and Julius Lukesˇ 1 1 Biology Centre, Institute of Parasitology and Faculty of Science, University of South Bohemia, Cˇ eske´ Budeˇ jovice (Budweis), Czech Republic 2 Department of Biology, Coastal Carolina University, Conway, SC, USA 3 Seattle Biomedical Research Institute, Seattle, WA, USA 4 Department of Parasitology, Charles University, Prague, Czech Republic 5 Biology Department, Colorado State University, Fort Collins, CO, USA Keywords Nfs-like proteins have cysteine desulfurase (CysD) activity, which removes Fe–S cluster; mitochondrion; RNAi; sulfur (S) from cysteine, and provides S for iron–sulfur cluster assembly selenoprotein; Trypanosoma and the thiolation of tRNAs. These proteins also have selenocysteine lyase activity in vitro, and cleave selenocysteine into alanine and elemental sele- Correspondence J. Lukesˇ, Institute of Parasitology, nium (Se). It was shown previously that the Nfs-like protein called Nfs Branisˇovska´ 31, 37005 Cˇ eske´ Budeˇ jovice, from the parasitic protist Trypanosoma brucei is a genuine CysD. A second Czech Republic Nfs-like protein is encoded in the nuclear genome of T. brucei. We called Fax: + 420 38 531 0388 this protein selenocysteine lyase (SCL) because phylogenetic analysis Tel: + 420 38 777 5416 reveals that it is monophyletic with known eukaryotic selenocysteine lyases. E-mail: [email protected] The Nfs protein is located in the mitochondrion, whereas the SCL protein seems to be present in the nucleus and cytoplasm. Unexpectedly, downre- (Revised 22 July 2009, revised 5 November 2009, accepted 9 November 2009) gulation of either Nfs or SCL protein leads to a dramatic decrease in both CysD and selenocysteine lyase activities concurrently in the mitochondrion doi:10.1111/j.1742-4658.2009.07489.x and the cytosolic fractions. -
Preparation of Bismuth Telluride Specimens for TEM
Preparation of Bismuth Telluride Specimens for TEM Mark Homer1, Douglas L. Medlin2 1,2. Sandia National Laboratories, Energy Nanomaterials Dept., Livermore CA, USA Bismuth telluride (Bi2Te3) and its alloys are an important class of thermoelectric material. How well a thermoelectric material works is dependent on a variety of factors such as electrical and thermal conductivity and the Seeback coefficient. Because the electrical and thermal conductivity can be affected by defects in the material, there is much interest in the basic understanding the microstructures of these materials [1]. There are challenges in preparation of TEM specimens from telluride-based materials due to their sensitivity to ion-milling artifacts. For instance, nanoscale defect arrangements have been shown to form in lead telluride (PbTe) specimens prepared under aggressive ion milling conditions if cooling and power density is not suitably controlled [2]. In this presentation we discuss methods and conditions for preparing TEM specimens of Bi2Te3 specimens considering both ion-milling and electropolishing techniques. In all cases TEM specimens were mechanically pre-thinned using conventional mechanical dimpling and polishing techniques prior to final thinning to electron transparency. The ion-milled specimens were prepared with Ar+ ion sputtering using a Fischione Model 1010 ion mill with LN cooling. The electropolished specimens were prepared using a Fischione Model 120 electropolisher and an electrolyte consisting of 53% water, 38% glycerol, 5% sodium hydroxide, and 4% tartaric acid. The electrolyte was set in an ice bath and cooled to 2° C, and electropolished at 25V and 35mA. Figures 1 and 2 show dark-field TEM micrographs comparing ion milled and electropolished Bi2Te3 specimens. -
Selenium Vs. Sulfur: Investigating the Substrate Specificity of a Selenocysteine Lyase
University of Central Florida STARS Electronic Theses and Dissertations, 2004-2019 2019 Selenium vs. Sulfur: Investigating the Substrate Specificity of a Selenocysteine Lyase Michael Johnstone University of Central Florida Part of the Biotechnology Commons Find similar works at: https://stars.library.ucf.edu/etd University of Central Florida Libraries http://library.ucf.edu This Masters Thesis (Open Access) is brought to you for free and open access by STARS. It has been accepted for inclusion in Electronic Theses and Dissertations, 2004-2019 by an authorized administrator of STARS. For more information, please contact [email protected]. STARS Citation Johnstone, Michael, "Selenium vs. Sulfur: Investigating the Substrate Specificity of a Selenocysteine Lyase" (2019). Electronic Theses and Dissertations, 2004-2019. 6511. https://stars.library.ucf.edu/etd/6511 SELENIUM VS. SULFUR: INVESTIGATING THE SUBSTRATE SPECIFICITY OF A SELENOCYSTEINE LYASE by MICHAEL ALAN JOHNSTONE B.S. University of Central Florida, 2017 A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in the Burnett School of Biomedical Sciences in the College of Medicine at the University of Central Florida Orlando, Florida Summer Term 2019 Major Professor: William T. Self © 2019 Michael Alan Johnstone ii ABSTRACT Selenium is a vital micronutrient in many organisms. While traces are required for survival, excess amounts are toxic; thus, selenium can be regarded as a biological “double-edged sword”. Selenium is chemically similar to the essential element sulfur, but curiously, evolution has selected the former over the latter for a subset of oxidoreductases. Enzymes involved in sulfur metabolism are less discriminate in terms of preventing selenium incorporation; however, its specific incorporation into selenoproteins reveals a highly discriminate process that is not completely understood. -
Vertically Aligned Arrays of Insb Nanostructures for Tuning Light Absorption in the Mid-Infrared
Vertically Aligned Arrays of InSb Nanostructures for Tuning Light Absorption in the Mid-Infrared The Harvard community has made this article openly available. Please share how this access benefits you. Your story matters Citable link http://nrs.harvard.edu/urn-3:HUL.InstRepos:37799758 Terms of Use This article was downloaded from Harvard University’s DASH repository, and is made available under the terms and conditions applicable to Other Posted Material, as set forth at http:// nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of- use#LAA Vertically Aligned Arrays of InSb Nanostructures for Tuning Light Absorption in the Mid-Infrared Nicholas Collins A Thesis in the Field of Bioengineering and Nanotechnology for the Degree of Master of Liberal Arts Harvard University March 2018 Copyright 2017 Nicholas Collins Abstract Infrared detection is valuable across a diverse range of fields. Military applications have long been the focus of development of infrared detection technology, but as accessibility to infrared detectors grows, industries ranging from waste management to medicine have shown broad uses for the technology. Imaging of biological samples is particularly well suited for near and mid infrared imaging as opaque superficial layers often inhibit the use of visible light to detect underlying structures which may hold diagnostic value. Infrared detecting devices are typically underutilized in a biomedical setting despite there being many potential applications. The primary objective of this research was to provide a proof of concept for a novel transmission filters system in the near and mid infrared range using vertically oriented indium antimonide (InSb) nanostructures. This was achieved by conducting optical simulations of InSb nanowires, developing an ICP-RIE etching process suitable for InSb, and, lastly, by measuring specular reflectance of the InSb nanostructure arrays using FT-IR microscopy.