Indium Phosphide Based Integrated Photonic Devices for Telecommunications and Sensing Applications by Ta-Ming Shih M.S
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TR-499: Indium Phosphide (CASRN 22398-80-7) in F344/N Rats And
NTP TECHNICAL REPORT ON THE TOXICOLOGY AND CARCINOGENESIS STUDIES OF INDIUM PHOSPHIDE (CAS NO. 22398-80-7) IN F344/N RATS AND B6C3F1 MICE (INHALATION STUDIES) NATIONAL TOXICOLOGY PROGRAM P.O. Box 12233 Research Triangle Park, NC 27709 July 2001 NTP TR 499 NIH Publication No. 01-4433 U.S. DEPARTMENT OF HEALTH AND HUMAN SERVICES Public Health Service National Institutes of Health FOREWORD The National Toxicology Program (NTP) is made up of four charter agencies of the U.S. Department of Health and Human Services (DHHS): the National Cancer Institute (NCI), National Institutes of Health; the National Institute of Environmental Health Sciences (NIEHS), National Institutes of Health; the National Center for Toxicological Research (NCTR), Food and Drug Administration; and the National Institute for Occupational Safety and Health (NIOSH), Centers for Disease Control and Prevention. In July 1981, the Carcinogenesis Bioassay Testing Program, NCI, was transferred to the NIEHS. The NTP coordinates the relevant programs, staff, and resources from these Public Health Service agencies relating to basic and applied research and to biological assay development and validation. The NTP develops, evaluates, and disseminates scientific information about potentially toxic and hazardous chemicals. This knowledge is used for protecting the health of the American people and for the primary prevention of disease. The studies described in this Technical Report were performed under the direction of the NIEHS and were conducted in compliance with NTP laboratory health and safety requirements and must meet or exceed all applicable federal, state, and local health and safety regulations. Animal care and use were in accordance with the Public Health Service Policy on Humane Care and Use of Animals. -
Discovering Amorphous Indium Phosphide Nanostructures with High-Temperature Ab Initio Molecular Dynamics
Discovering Amorphous Indium Phosphide Nanostructures with High-Temperature ab Initio Molecular Dynamics The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation Zhao, Qing, Lisi Xie, and Heather J. Kulik. “Discovering Amorphous Indium Phosphide Nanostructures with High-Temperature Ab Initio Molecular Dynamics.” The Journal of Physical Chemistry C 119.40 (2015): 23238–23249. As Published http://dx.doi.org/10.1021/acs.jpcc.5b07264 Publisher American Chemical Society (ACS) Version Author's final manuscript Citable link http://hdl.handle.net/1721.1/105155 Terms of Use Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. Discovering Amorphous Indium Phosphide Nanostructures with High-Temperature Ab Initio Molecular Dynamics Qing Zhao1,2, Lisi Xie1, and Heather J. Kulik1,* 1Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 2Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 ABSTRACT: We employ high-temperature ab initio molecular dynamics (AIMD) as a sampling approach to discover low-energy, semiconducting, indium phosphide nanostructures. Starting from under-coordinated models of InP (e.g. a single layer of InP(111)), rapid rearrangement into a stabilized, higher-coordinate but amorphous cluster is observed across the size range considered (In3P3 to In22P22). These clusters exhibit exponential decrease in energy per atom with system size as effective coordination increases, which we define through distance-cutoff coordination number assignment and partial charge analysis. The sampling approach is robust to initial configuration choice as consistent results are obtained when alternative crystal models or computationally efficient generation of structures from sequential addition and removal of atoms are employed. -
COMBINED LIST of Particularly Hazardous Substances
COMBINED LIST of Particularly Hazardous Substances revised 2/4/2021 IARC list 1 are Carcinogenic to humans list compiled by Hector Acuna, UCSB IARC list Group 2A Probably carcinogenic to humans IARC list Group 2B Possibly carcinogenic to humans If any of the chemicals listed below are used in your research then complete a Standard Operating Procedure (SOP) for the product as described in the Chemical Hygiene Plan. Prop 65 known to cause cancer or reproductive toxicity Material(s) not on the list does not preclude one from completing an SOP. Other extremely toxic chemicals KNOWN Carcinogens from National Toxicology Program (NTP) or other high hazards will require the development of an SOP. Red= added in 2020 or status change Reasonably Anticipated NTP EPA Haz list COMBINED LIST of Particularly Hazardous Substances CAS Source from where the material is listed. 6,9-Methano-2,4,3-benzodioxathiepin, 6,7,8,9,10,10- hexachloro-1,5,5a,6,9,9a-hexahydro-, 3-oxide Acutely Toxic Methanimidamide, N,N-dimethyl-N'-[2-methyl-4-[[(methylamino)carbonyl]oxy]phenyl]- Acutely Toxic 1-(2-Chloroethyl)-3-(4-methylcyclohexyl)-1-nitrosourea (Methyl-CCNU) Prop 65 KNOWN Carcinogens NTP 1-(2-Chloroethyl)-3-cyclohexyl-1-nitrosourea (CCNU) IARC list Group 2A Reasonably Anticipated NTP 1-(2-Chloroethyl)-3-cyclohexyl-1-nitrosourea (CCNU) (Lomustine) Prop 65 1-(o-Chlorophenyl)thiourea Acutely Toxic 1,1,1,2-Tetrachloroethane IARC list Group 2B 1,1,2,2-Tetrachloroethane Prop 65 IARC list Group 2B 1,1-Dichloro-2,2-bis(p -chloropheny)ethylene (DDE) Prop 65 1,1-Dichloroethane -
Advanced VCSEL Technology: Self-Heating and Intrinsic Modulation Response
IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 54, NO. 3, JUNE 2018 2400209 Advanced VCSEL Technology: Self-Heating and Intrinsic Modulation Response Dennis G. Deppe, Fellow, IEEE, Mingxin Li, Xu Yang, and Mina Bayat (Invited Paper) Abstract— Experimental data and modeling results are can efficiently conduct heat from the strongly pumped laser presented for a new type of vertical-cavity surface-emitting active volume, and in a laser cavity much smaller than possible laser (VCSEL) that solves numerous problems with oxide before with commercial edge-emitting laser diodes. VCSELs. In addition, the new oxide-free VCSEL can be scaled to small size. Modeling shows that this small size can dramatically This change made it possible to obtain much higher cur- increase the speed of the laser through control of self-heating. rent density, and therefore higher photon density, and higher Modeling compared with both the oxide and the new oxide-free stimulated emission rate than other laser diodes. Continually VCSEL predict intrinsic modulation speed for room temperature reducing the laser active volume and relying on relatively > approaching 80 GHz, indicating the potential for 100-Gb/s data high efficiency VCSEL designs have produced ever-increasing speed from directly modulated VCSELs. The modeling is one of if not the first to include self-heating and spectral detuning between laser diode speed. VCSELs now reign supreme in laboratory the gain and the cavity resonance that results from self-heating. demonstrations of direct modulation data speed due largely to The modeling results accurately accounts for the saturation in their combined small volume, matched cavity and gain region, modulation speed in very high-speed oxide VCSELs operating at and high internal heat flow through high quality epitaxial high temperature and accounts for the temperature of differential mirrors [15]–[23]. -
IEEE Spectrum Gaas
Proof #4 COLOR 8/5/08 @ 5:15 pm BP BEYOND SILICON’S ELEMENTAL LOGICIN THE QUEST FOR SPEED, KEY PARTS OF MICRO- PROCESSORS MAY SOON BE MADE OF GALLIUM ARSENIDE OR OTHER “III-V” SEMICONDUCTORS BY PEIDE D. YE he first general-purpose lithography, billions of them are routinely microprocessor, the Intel 8080, constructed en masse on the surface of a sili- released in 1974, could execute con wafer. about half a million instructions As these transistors got smaller over the T per second. At the time, that years, more could fit on a chip without rais- seemed pretty zippy. ing its overall cost. They also gained the abil- Today the 8080’s most advanced descen- ity to turn on and off at increasingly rapid dant operates 100 000 times as fast. This phe- rates, allowing microprocessors to hum along nomenal progress is a direct result of the semi- at ever-higher speeds. ALL CHRISTIEARTWORK: BRYAN DESIGN conductor industry’s ability to reduce the size But shrinking MOSFETs much beyond their of a microprocessor’s fundamental building current size—a few tens of nanometers—will be blocks—its many metal-oxide-semiconductor a herculean challenge. Indeed, at some point in field-effect transistors (MOSFETs), which act the next several years, it may become impossi- as tiny switches. Through the magic of photo- ble to make them more minuscule, for reasons WWW.SPECTRUM.IEEE.ORG SEPTEMBER 2008 • IEEE SPECTRUM • INT 39 TOMIC-LAYER DEPOSITION provides one means for coating a semiconductor wafer with a high-k aluminum oxide insulator. The Abenefit of this technique is that it offers atomic-scale control of the coating thickness without requiring elaborate equipment. -
Indium Arsenide/Gallium Arsenide Quantum Dots and Nanomesas: Multimillion-Atom Molecular Dynamics Solutions on Parallel Architectures
Louisiana State University LSU Digital Commons LSU Historical Dissertations and Theses Graduate School 2001 Indium Arsenide/Gallium Arsenide Quantum Dots and Nanomesas: Multimillion-Atom Molecular Dynamics Solutions on Parallel Architectures. Xiaotao Su Louisiana State University and Agricultural & Mechanical College Follow this and additional works at: https://digitalcommons.lsu.edu/gradschool_disstheses Recommended Citation Su, Xiaotao, "Indium Arsenide/Gallium Arsenide Quantum Dots and Nanomesas: Multimillion-Atom Molecular Dynamics Solutions on Parallel Architectures." (2001). LSU Historical Dissertations and Theses. 319. https://digitalcommons.lsu.edu/gradschool_disstheses/319 This Dissertation is brought to you for free and open access by the Graduate School at LSU Digital Commons. It has been accepted for inclusion in LSU Historical Dissertations and Theses by an authorized administrator of LSU Digital Commons. For more information, please contact [email protected]. INFORMATION TO USERS This manuscript has been reproduced from the microfilm master. UMI fiims the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be from any type of computer printer. The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and improper alignment can adversely affect reproduction.. In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized copyright material had to be removed, a note will indicate the deletion. Oversize materials (e.g., maps, drawings, charts) are reproduced by sectioning the original, beginning at the upper left-hand comer and continuing from left to right in equal sections with small overlaps. -
Binary and Ternary Transition-Metal Phosphides As Hydrodenitrogenation Catalysts
Research Collection Doctoral Thesis Binary and ternary transition-metal phosphides as hydrodenitrogenation catalysts Author(s): Stinner, Christoph Publication Date: 2001 Permanent Link: https://doi.org/10.3929/ethz-a-004378279 Rights / License: In Copyright - Non-Commercial Use Permitted This page was generated automatically upon download from the ETH Zurich Research Collection. For more information please consult the Terms of use. ETH Library Diss. ETH No. 14422 Binary and Ternary Transition-Metal Phosphides as Hydrodenitrogenation Catalysts A dissertation submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Natural Sciences Presented by Christoph Stinner Dipl.-Chem. University of Bonn born February 27, 1969 in Troisdorf (NRW), Germany Accepted on the recommendation of Prof. Dr. Roel Prins, examiner Prof. Dr. Reinhard Nesper, co-examiner Dr. Thomas Weber, co-examiner Zurich 2001 I Contents Zusammenfassung V Abstract IX 1 Introduction 1 1.1 Motivation 1 1.2 Phosphides 4 1.2.1 General 4 1.2.2 Classification 4 1.2.3 Preparation 5 1.2.4 Properties 12 1.2.5 Applications and Uses 13 1.3 Scope of the Thesis 14 1.4 References 16 2 Characterization Methods 1 2.1 FT Raman Spectroscopy 21 2.2 Thermogravimetric Analysis 24 2.3 Temperature-Programmed Reduction 25 2.4 X-Ray Powder Diffractometry 26 2.5 Nitrogen Adsorption 28 2.6 Solid State Nuclear Magnetic Resonance Spectroscopy 28 2.7 Catalytic Test 33 2.8 References 36 3 Formation, Structure, and HDN Activity of Unsupported Molybdenum Phosphide 37 3.1 Introduction -
Scalable Synthesis of Inas Quantum Dots Mediated Through Indium Redox Chemistry Matthias Ginterseder, Daniel Franke, Collin F
pubs.acs.org/JACS Communication Scalable Synthesis of InAs Quantum Dots Mediated through Indium Redox Chemistry Matthias Ginterseder, Daniel Franke, Collin F. Perkinson, Lili Wang, Eric C. Hansen, and Moungi G. Bawendi* Cite This: J. Am. Chem. Soc. 2020, 142, 4088−4092 Read Online ACCESS Metrics & More Article Recommendations *sı Supporting Information ABSTRACT: Next-generation optoelectronic applications centered in the near-infrared (NIR) and short-wave infrared (SWIR) wavelength regimes require high-quality materials. Among these materials, colloidal InAs quantum dots (QDs) stand out as an infrared-active candidate material for biological imaging, lighting, and sensing applications. Despite significant development of their optical properties, the synthesis of InAs QDs still routinely relies on hazardous, commercially unavailable precursors. Herein, we describe a straightforward single hot injection procedure revolving around In(I)Cl as the key precursor. Acting as a simultaneous reducing agent and In source, In(I)Cl smoothly reacts with a tris(amino)arsenic precursor to yield colloidal InAs quantitatively and at gram scale. Tuning the reaction temperature produces InAs cores with a first excitonic absorption feature in the range of 700− 1400 nm. A dynamic disproportionation equilibrium between In(I), In metal, and In(III) opens up additional flexibility in precursor selection. CdSe shell growth on the produced cores enhances their optical properties, furnishing particles with center emission wavelengths between 1000 and 1500 nm and narrow photoluminescence full-width at half-maximum (FWHM) of about 120 meV throughout. The simplicity, scalability, and tunability of the disclosed precursor platform are anticipated to inspire further research on In-based colloidal QDs. -
III-V Material Properties Welcome to This Section on III-V PV Technology. in This Video We Will Discuss the Material
III-V Material Properties Welcome to this section on III-V PV technology. In this video we will discuss the material properties of the semiconductors used for this technology. In this video, you will learn what the III-V PV technology exactly is and how it is different from other solar cell technologies. We will then discuss the structural properties of III-V semiconductors. In the next video we will look into the electrical and optical properties of III- V materials. The III-V PV technology, as the name implies, utilizes elements of the 3-A group and the 5-A group in the periodic table of elements. As you might recall, group 3 elements have 3 electrons in their outer valence shell, and group 5 elements have 5 valence electrons. One of the most common III-V absorber materials is formed by bonding the group 3 material gallium, with the group 5 material arsenic. Several such combinations are possible however, and many different III-V alloys are used as an absorber material by the PV industry. Examples include Gallium phosphide, Indium phosphide, indium arsenide, Gallium indium arsenide, gallium indium phosphide, aluminium-gallium-indium-arsenide and aluminium- gallium-indium-phosphide. An important question for III-V technology is how abundant are the III- and V- elements. As discussed at the start of this course, of these five elements, only aluminium and phosphorus are relatively abundant in nature. Gallium, arsenide and germanium are not rare or precious metals, but they are much less abundant than silicon. Indium is rare and in high demand. -
Indium Gallium Arsenide Detectors
TELEDYNE JUDSON TECHNOLOGIES A Teledyne Technologies Company Indium Gallium Arsenide Detectors Teledyne Judson Technologies LLC 221 Commerce Drive Montgomeryville, PA 18936 USA Tel: 215-368-6900 Fax: 215-362-6107 Visit us on the web. ISO 9001 Certified www.teledynejudson.com 1/9 J22 and J23 Detector Operating Notes (0.8 to 2.6 µm) TELEDYNE JUDSON TECHNOLOGIES A Teledyne Technologies Company General Accessories The J22 and J23 series are high For a complete system, Teledyne Judson performance InGaAs detectors offers low noise transimpedance amp- operating over the spectral range lifier modules, heat sink/preamp assem- from 0.8µm to 2.6µm. These blies and temperature controllers. For detectors provide fast rise time, further details, please visit our uniformity of response, excellent website. sensitivity, and long term reliability for a wide range of applications. For Call us enhanced performance or temperature stability of response Let our team of application engineers near the cutoff wavelength, Teledyne assist you in selecting the best Judson offers a variety of thermoele detector design for your application. ctrically cooled detector options. Or visit our website for additional Applications information on all of Teledyne Judson’s products. Device Options · Gas analysis · NIR-FTIR Teledyne Judson’s standard InGaAs · Raman spectroscopy detectors, the J22 series, offers high · IR fluorescence reliability and performance in the · Blood analysis spectral range from 0.8 μm to 1.7μm. · Optical sorting In addition, the J23 series extended · Radiometry InGaAs detectors are available in · Chemical detection four cutoff options at 1.9μm, 2.2μm, · Optical communication 2.4μm and 2.6μm. Figure 1 shows the · Optical power monitoring typical response for the J22 and J23 · Laser diode monitoring series at room temperature operation. -
High Hazard Chemical Policy
Environmental Health & Safety Policy Manual Issue Date: 2/23/2011 Policy # EHS-200.09 High Hazard Chemical Policy 1.0 PURPOSE: To minimize hazardous exposures to high hazard chemicals which include select carcinogens, reproductive/developmental toxins, chemicals that have a high degree of toxicity. 2.0 SCOPE: The procedures provide guidance to all LSUHSC personnel who work with high hazard chemicals. 3.0 REPONSIBILITIES: 3.1 Environmental Health and Safety (EH&S) shall: • Provide technical assistance with the proper handling and safe disposal of high hazard chemicals. • Maintain a list of high hazard chemicals used at LSUHSC, see Appendix A. • Conduct exposure assessments and evaluate exposure control measures as necessary. Maintain employee exposure records. • Provide emergency response for chemical spills. 3.2 Principle Investigator (PI) /Supervisor shall: • Develop and implement a laboratory specific standard operation plan for high hazard chemical use per OSHA 29CFR 1910.1450 (e)(3)(i); Occupational Exposure to Hazardous Chemicals in Laboratories. • Notify EH&S of the addition of a high hazard chemical not previously used in the laboratory. • Ensure personnel are trained on specific chemical hazards present in the lab. • Maintain Material Safety Data Sheets (MSDS) for all chemicals, either on the computer hard drive or in hard copy. • Coordinate the provision of medical examinations, exposure monitoring and recordkeeping as required. 3.3 Employees: • Complete all necessary training before performing any work. • Observe all safety -
Nanowires Grown on Graphene Have Surprising Structure
Close Nanowires grown on graphene have surprising structure When a team of University of Illinois engineers set out to grow nanowires of a compound semiconductor on top of a sheet of graphene, they did not expect to discover a new paradigm of epitaxy. The self-assembled wires have a core of one composition and an outer layer of another, a desired trait for many advanced electronics applications. Led by professor Xiuling Li, in collaboration with professors Eric Pop and Joseph Lyding, all professors of electrical and computer engineering, the team published its findings in the journal Nano Letters. Nanowires, tiny strings of semiconductor material, have great potential for applications in transistors, solar cells, lasers, sensors and more. “Nanowires are really the major building blocks of future nano-devices,” said postdoctoral researcher Parsian Mohseni, first author of the study. “Nanowires are components that can be used, based on what material you grow them out of, for any functional electronics application.” A false-color microscope image of a single nanowire, showing the InAs core and InGaAs shell. | Graphic by Parsian Mohseni Li’s group uses a method called van der Waals epitaxy to grow nanowires from the bottom up on a flat substrate of semiconductor materials, such as silicon. The nanowires are made of a class of materials called III-V (three-five), compound semiconductors that hold particular promise for applications involving light, such as solar cells or lasers. The group previously reported growing III-V nanowires on silicon. While silicon is the most widely used material in devices, it has a number of shortcomings.