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Electrical Resistivity, Thermoelectric Power and I-V Characteristics of Sb-Se Thin Films at Different Compositions

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Electrical Resistivity, Thermoelectric Power and I-V Characteristics of Sb-Se Thin Films at Different Compositions International Journal of Innovative Technology and Exploring Engineering (IJITEE) ISSN: 2278-3075, Volume-9 Issue-7, May 2020 Electrical Resistivity, Thermoelectric Power and I-V Characteristics of Sb-Se Thin Films at Different Compositions. U. P. Shinde, R. S. Gosavi Abstract: Sb-Se thin films of varying composition have been The structural transformation and transformation kinetics of deposited on glass substrates at room temperature. These films Sb Se films (60 ≤ x ≤ 70) were studied to investigate 0 x 100−x were annealed at temperature interval of 50 K. The electrical the feasibility of applying Sb Se alloys in phase-change resistivity (ρ) and thermoelectric power (α) of same films were x 100−x measured. The resistance of semiconducting films decreases nonvolatile memories. The transition temperature, sheet rapidly on heating showing negative temperature coefficient of resistance and activation energy for transformation decrease resistance (T.C.R.). The composition dependent resistivity shows as the amount of Sb increases in the Sb x Se100−x film [5]. The opt. exponential change, sharp fall of resistivity may be attributed due amorphous films are semiconductive, and their Eg (0.28– to increase of metallic ‘Sb’ in Sb-Se thin films. The composition 0.35 eV) is decreasing with an increasing content of Sb dependent activation energy of Sb-Se thin films has been [6].From the survey of literature, I have undertaken the calculated. The activation energy (∆E) of semiconducting films was found to increase with selenium concentration. For different present investigation to correlate electrical properties of co- compositions thermoelectric power (α) increases upto 70 at. wt.% evaporated Sb-Se system with different compositions. of Se concentration and then slowly decreases. The I-V characteristics of Sb-Se thin films were measured using copper II. MATERIALS AND METHODS (Cu) contacts. The films show ohmic conduction for different applied voltages as well as various concentrations of Selenium A] Preparation of thin films by thermal evaporation (Se) in Sb-Se thin films. technique: Antimony-Selenium binary films have been formed on glass Keywords: Sb-Se, substrate, composition, thin films, resistivity, substrates kept at room temperature by evaporation of pure activation energy. thermoelectric power, Voltage. and antimony and selenium from two different sources, in a vacuum of the order of 10-5 torr. The antimony and I. INTRODUCTION selenium both were evaporated from tungsten filament and The variation in electrical conductivity obtained by [1] on nichrome windings using mica sheets respectively. Both the polycrystalline antimony triselenide was possibly caused by elements were simultaneously heated, so as to mix the vapours of ‘Sb’ and ‘Se’ gave the required films. The films the presence of free ‘Se’ in the polycrystals. The electrical of different composition have been obtained [7-11]. The set and the thermal conductivities of the melts of antimony of films thus formed were annealed at different temperatures doped antimony selenide was found to depend weakly on from 373 0K to 523 0K with temperature difference of 50 the concentration of the dopant [2]. The SbxSe1-x alloys and 0K for 8 hrs each, for the purpose of observing the annealed films with x=0, 0.1, 0.7 and 0.9 have hexagonal temperature dependent electrical characteristics as well as structure and orthorhombic structure for x=0.3, 0.4, and 0.5 . uniform distribution of the components in the deposits. After The value of the thermoelectric power was found to be 120 annealing the films were used for composition dependent µV per degree for pure selenium and is always positive for resistance and thermoelectric power measurement. x=0, 0.1, 0.3, 0.4 and 0.9 showing that structures are of p- B] Measurement Parameters: type conduction, while for x=0.5 the thermoelectric power is a] Resistance Measurement: negative and equals -440 µV per degree, i.e. of n-type The resistance of the specimen measured by digital conduction [3]. SbxSe1−x(0.1, 0.2 and 0.3) alloy film films multimeter. The resistivity [7-10] (ρ) of the sample were prepared onto glass and quartz substrates by thermal calculated by the relation, evaporation technique. Structural, morphology and optical ρ = (R b d) / l , ohm-cm ------------------ (1) characteristics of the films were analyzed [4]. Where l = length of the film in cm. b = breadth of the film in cm. d = thickness of the film in cm. R = Resistance of the film in ohm. b] Measurement of Thermoelectric Power (α): Thermoelectric Power (α) was measured by differential method. The temperature difference (∆T) was established between the two ends of the sample and the thermal emf was noted. The temperature difference (∆T) of 10 0K between Revised Manuscript Received on May 01, 2020. two ends of the sample was kept constant for above room U. P. Shinde, Dept. of Electronic Science, L.V.H. Art’s, Science & temperature. Commerce College, Panchavati, Nashik-422003 (M.S.), India. [email protected] R. S. Gosavi, Dept. of Electronic Science, Art’s, Science & Commerce College, Rahuri, Dist. Ahmednagar- 413705 (M.S.), India Published By: Retrieval Number: G5717059720/2020©BEIESP Blue Eyes Intelligence Engineering DOI: 10.35940/ijitee.G5717.059720 894 & Sciences Publication Electrical Resistivity, Thermoelectric Power and I-V Characteristics of Sb-Se Thin Films at Different Compositions. The variation of emf with temperature is expressed by From fig.3, it is observed that activation energy of Sb-Se α = ∆V/∆T, mV/ 0K --------------------- (2) thin films of nearly 50 % of atomic weight, increases with Where ∆V= The differential emf. increase of annealing temperature. Due to increase of ∆T= The temperature difference between annealing temperature, the components of the film material the ends of sample. uniformly distributed over the entire area of the film and c] I-V measurement: there by removal defects. The current (I) flowing through the film sample was 0.12 measured by sandwiched between ‘Cu’ electrodes with different applied voltages. 0.1 III. RESULTS AND DISCUSSION C O 0.08 2.5 , mV/ , 0.06 α 2 cm - Ω 1.5 0.04 , ρ 1 0 50 100 log log At. wt. % of Se 0.5 0 Fig 4: Plot of thermoelectric Power (α) verses at.wt.% of 0 20 40 60 80 (Se) of thin films. From fig. 4, it is interesting to see the variation of (α) with At. wt. % of Sb at. wt.% of (Se), as the ‘Se’ concentration increases the TEP Fig.1: Plot of resistivity ( ρ ) versus at.wt.% of Sb in Sb- ‘α’ increases then remains constant because of stoichiometry Se thin films at room temperature. ( Sb2Se3) of the films achieved. Fig. 1 shows variation of resistivity () with at. wt. % of From fig. 5, it is seen that the films obeys Ohm’s law ( ‘Sb’ of semiconducting Sb-Se thin films at room I α V). The observed ohmic dependence of current on temperature. It is seen that ‘’ decreases exponentially with voltage at low fields can be explained on the basis that in the increase of ‘Sb’ concentration. This sharp fall of resistivity sample studied, bulk limited current exceeds the space may be attributed to increase of metallic ‘Sb’ in Sb-Se charge limited current. thin films. 0.8 0.35 0.6 ) 0.25 7 E).eV 0.4 0.15 Δ ( 0.05 0.2 Activation energy energy Activation 0 50 100 ( Ix10Current At. wt. % of Sb 0 4 8 12 16 Fig.2: Plot of activation energy (E) versus at.wt.% of Sb in Sb-Se thin films at room temperature. Applied Voltage (V) Fig.2 shows variation of E with at. wt .% of ‘Sb’ in Sb-Se thin films . the increased concentration of ‘Sb’ in Sb- Fig.5: Plot of current (I) verses applied voltage (V) for Se thin films decreases E, because of trap centers in the different compositions of Sb-Se thin films. forbidden energy gap shifts towards conduction band with addition of ‘Sb’ into ‘Se’ causing lower energy of IV. CONCLUSION activation of carriers. These films showed temperature dependent semiconducting 0.05 behavior. The resistivity and activation energy decreases with increase of composition of ‘Sb’ in Sb-Se thin films, 0.045 while the activation energy increases with increase of 0.04 annealing temperature of the films. It is interesting to see the variation of (α) with at.wt.% of (Se), as the ‘Se’ 0.035 concentration increases the TEP ‘α’ increases nearly up to ( E/10), eV E/10),( 70 % then it remains constant because of stoichiometry ( Activation Activation energy 0.03 Sb2Se3) of the films achieved. The I-V characteristics 350 400 450 500 550 600 shows Ohmic conduction for any concentration. Annealing temp. ( T ), K Fig. 3: Plot of activation energy (E) versus annealing temperature Sb-Se thin films. Published By: Retrieval Number: G5717059720/2020©BEIESP Blue Eyes Intelligence Engineering DOI: 10.35940/ijitee.G5717.059720 895 & Sciences Publication International Journal of Innovative Technology and Exploring Engineering (IJITEE) ISSN: 2278-3075, Volume-9 Issue-7, May 2020 ACKNOWLEDGEMENT The authors are greatly thanks to the Management authorities of M. G. Vidyamandir Panchavati Nashik-03 and The Principal, L.V.H. Arts, Science and Commerce College Panchavati Nashik for providing laboratory facilities to do this work. REFERENCES 1. M. V. Kat & S. D. Shutov, Vchenye Zapiski Kishinev Univ, 39(1959) 45. 2. V. N. Sokolov, Sov Phys Semicond, 18 (1984) 495. 3. H. A. Zayed, A. M. Abo-Elsoud, A. M. Ibrahim and M. A. Kenawy J of Phys D: App Phy, 28, 4 (1995) 770. 4. A. H. Ammar A. A. M.Farag & M. S. Abo-Ghazala, J of Alloys and Comp 694 (2017), 752-760. 5. M. J.
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