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Effect of Spectral Broadening and Electron-Hole Scattering on Carrier

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Effect of Spectral Broadening and Electron-Hole Scattering on Carrier Effect of spectral broadening and electron-hole scattering on carrier relaxat!on in GaAs quantum dots lgor Vurgaftman and Jasprit Singh Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbol; Michigan 48109-2122 (Received 13 August 1993; accepted for publication 2 November 1993) Luminescence efficiency in quantum dots has been a matter of some controversy recently. Theoretically, poor efficiency has been predicted owing to the phonon bottleneck in carrier relaxation, while slightly enhanced luminescence has been reported in several experiments. The approach of this letter differs from previous theoretical work in that the scattering rates are computed self-consistently accounting for the spectral broadening of the electronic spectra due to a finite energy level lifetime. Scattering of electrons and holes confined in the dot is found to be responsible for breaking the phonon bottleneck in electron relaxation reducing the relaxation time from several ns to several hundred ps. Results of a Monte Carlo simulation also including confined and interface polar optical phonon and acoustic phonon scattering for a range of quantum dot dimensions and temperatures are presented. These results may provide an explanation of the absence of a significant reduction in quantum dot luminescence compared with that from quantum wells. The optoelectronic properties of quasi-one-dimensional In this letter, we present a theoretical analysis of electron electronic systems have been investigated recently for poten- relaxation in GaAs/Alo,sGao.,As quantum dots based on a tial applications in ultralow threshold semiconductor lasers’ Monte Carlo simulation of the equilibration process with the and with regard to the predicted enhancement in optical inclusion of self-consistently calculated electron-phonon and nonlinearities.2 The realization is growing, however, that al- electron-hole scattering processes. An idealized flat-band po- though the discrete eigenvalue spectrum in quantum dots re- tential profile is assumed, i.e., no attempt is made to describe sults in a greatly increased oscillator strength for optical tran- the band-bending properties of the GaAs/AlGaAs system re- sitions, coupling of electrons to polar optical phonons (POP) sulting from a particular fabrication process. The electronic may be drastically reduced in small dots, and as a result, spectrum is found by solving the Schriidinger equation in the relaxation of electrons to the ground state may be hindered. effective mass approximation, and the hole states are derived Phonon scattering rates in quantum dots have been studied by diagonalizing the four-band Kohn-Luttinger Ham& by Bockelmann and Bastard? They pointed out that unless tonian, in which the standard prescription for calculating the electron states are separated by the energy of the optical quantum confined states [k, --+ - i( d/h), etc.] is used. In phonon, the mechanism for POP scattering in quantum dots order to estimate the electron-hole scattering rate, for the is different from that in bulk semiconductors. Electron relax- sake of computational simplicity, the off-diagonal coupling ation may occur as a result of phonon renormalization, terms in the Hamiltonian are set to zero. The eigenenergies broadening of the electron and phonon spectrum, emission of and eigenfunctions are found by discretizing the volume of short-wavelength acoustic phonons, or higher order phonon the dot on a uniform spatial mesh terminated far away from scattering processes. Considering electron relaxation by the dot interfaces, approximating derivatives as finite differ- emission of acoustic phonons, Benisty et aL4 have predicted ences, and solving the resulting matrix equation iteratively. poor radiative efficiency in quantum dots with lateral dimen- The macroscopic electrostatic model has proved useful sions less than 500 A in consequence of the electron relax- in approximating the spatial structure and dispersion rela- ation times being comparable to nonradiative recombination tions for phonon models in quantum wells and wires.” We times (a few ns). Although a number of experiments have assume that the confined phonon modes are given by linear been reported which appear to substantiate this combinations of products of sines and cosines, whose wave conclusion,5-7 several workers have observed luminescence in very small quantum dots, in which the effect of the pho- vector is fixed at multiples of wfLi, where i=x,y,z, by im- non bottleneck should become noticeable.“,’ Recently en- posing the boundary condition that the phonon mode vanish hanced luminescence has been observed in 35-nm InGaAs/ near the interface with a material with a different resonant GaAs quantum dots defined by a combination of electron vibration frequency. Since the nonepitaxial dimensions beam epitaxy, dry etching, and molecular beam epitaxial greater than 20 nm are examined in this letter, we assume regrowth,” although fabrication-induced changes in the po- quantum well interface phonon modes varying as hyperbolic tential profile in those structures may be substantial. In ex- sines and cosines with the dispersion relation derivable from perimentally realizable quantum dots, nomadiative recombi- the boundary condition.” The interface phonon energies lie nation may be enhanced by controllable defects as well as by in the Reststrahlen region between the transverse (tio,=33 the relaxation bottleneck; therefore, the issue of electron re- meV in GaAs) and longitudinal (fiwLo=36 meV) optical laxation in quantum dots cannot be considered well under- phonon energies. stood at present. The confined POP scattering rate is calculated using the 232 Appl. Phys. Lett. 64 (2), 10 January 1994 0003-6951/94/64(2)/232,‘3/$6.00 Q 1994 American Institute of Physics Friihlich form of the interaction Hamiltonian from the Fermi 0.18 Without SHS Epilibqium Golden Rule: ____.________.......__ ,.. ,.,....,,.., . @P=gl!~,*g;p (; -$) , , Y 2 x[(f)2+( y i’+(Ei ’]-’ 1; 1 1 x rz(OLO)f~ 2)-z MyyZ,m,n) 2 1 )I I x a(Ef-Ei+hwJJo), (1) 0.0 200.0 400.0 600.0 800.0 1000.0 where Iif is the overlap integral for the cell periodic parts of TIME AFTER INJECTION (PS) the electron wave function, presumed unity in this work, and the rest of the symbols have their usual meaning. The upper FIG. 1. The mean electron energy as a function of time after injection for sign corresponds to phonon emission, the lower sign to ab- the 50 AX250 AX250 A GaAs/Al,,ZGao,,As quantum dot at 300 K. The sorption. Taking an arbitrary vertex of the box as origin, the horizontal line represents the equilibrium mean energy. The averaging is overlap integral for the envelope parts of the wave function over 5000 carriers. can be written down simply as POP modes. Due to the weaker coupling of acoustic phonons M~(l,m,n)= d”rcp;(r)sin rT)Sin(y)Sin(z- F) cpi(r). to electrons, the broadening linewidth is also much smaller than that for POP. (2) The Pauli exclusion principle has to be considered in the The delta function in Eq. (1) is replaced by a Gaussian line occupation of discrete quantum dot levels. However, because shape function: of the small size of dots under study, it is permissible to assume that only one electron is injected in any one quantum qq-.E,+fio& + &XP ( -(?;4;;?o)2). (3) dot. With this assumption, the electron-electron interaction and screening can be ignored. Previous treatments of elec- An iterative self-consistent calculation of the scattering rates tron relaxation mechanisms in quantum dots have not in- and the linewidth (~=li/r, where r is taken to be the recipro- cluded electron-hole (EH) scattering. Since the hole confine- cal of the scattering rate, is necessary to determine Wp ment energy is much smaller than that for the electron, the from Eqs. (l)-(3). The scattering rates have also been calcu- hole distribution can be assumed to be in thermal equilibrium lated for interface phonon modes and have been found to be with the lattice. Therefore, the electron may lose energy by lower by two orders of magnitude than the rates for confined interacting with a thermalized hole in the valence band. The bulklike phonons. Consequently, even for phonon energies in matrix element can be computed in the Born approximation: the range between 33 and 36 meV, confined phonon scatter- ing dominates, with the energy difference made up by the d3q, 2 ipi*‘(r,)~fh~‘~rk); broadening of the electronic spectrum. By assumption, the v=l lattice is maintained at a constant temperature. In quantum wires, acoustic phonon (AP) scattering is one of the mechanisms responsible for electron relaxation for quantum wires of cross sections less than 100 AX 100 A-l2 In where the sum runs over the 13/2,-t3/2) and 13/2,+1/2) an- quantum dots, the AP scattering rate can be calculated using gular momentum statesThe scattering rate is calculated by the Fermi Golden Rule and the deformation potential theory: applying the Fermi Golden Rule with the broadening found in an iterative fashion as described above. y‘y= 7r c f=(n(mq)+; 2;) Given the relevant scattering rates, electron relaxation P-wyL q wq can be modeled by a Monte Carlo simulation. Electrons are 2 injected at the top of the potential barrier in a thermal distri- X d3r (pT(r)e’g”qi(r) S(Ef-Eikfi~~), (4) bution, and their evolution is followed in energy and time. II An averaging over a large number of electrons (and equiva- where p is the mass density of GaAs, DA is the acoustic lently, dots) is necessary in order to produce statistically re- deformation potential, and q is the phonon wave vector with liable results. In Fig. 1 the evolution of the mean energy of a continuous spectrum. We include acoustic phonon scatter- the electron distribution in the 50 AX250 AX250 A ing in our Monte Carlo simulation, although in small quan- GaAs/Al,,Gao,,As quantum dot at 300 K is shown.
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