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Photomultiplier Tubes Opening The Future with Photonics

Hamamatsu has been engaged in photonics technology for 45 years and has developed a variety of photonic devices such as , imaging devices, and scientific sources. Our state-of-the-art photonic devices have applications in a wide range of fields, including scientific research, industrial instrumentation, and physical photometry as well as general . The continually expanding frontiers of science demand equally constant exploration of new technology. Hamamatsu's research and development of photonic devices not only keep pace with scientific needs, but stay one step ahead, pioneering new trails into the future of light and optics.

This catalog provides information on our photomultiplier tubes, their accessories, multipliers and microchannel plates. But this catalog is just the starting point of our line because we will modify our production specs or design completely new types to match your performance specs.

Variants of the listed types are usually available with: 1. Different materials 2. Different window materials 3. Different configurations and pin connections 4. Other special requirements for your applications

For further information, please contact your nearest Hamamatsu sales offices. TABLE OF CONTENTS Page Index by Type No...... 2 About Photomultiplier Tubes Construction and Operating Characteristics ...... 4 Selection Guide by Applications ...... 18 Side-On Type Photomultiplier Tubes 13 mm (1/2 ”) Dia. Types ...... 24 28 mm (1-1/8 ”) Dia. Types with UV to Visible Sensitivity ...... 26 28 mm (1-1/8 ”) Dia. Types with UV to Near IR Sensitivity ...... 28 13 mm (1/2 ”) Dia. Types, 28 mm (1-1/8 ”) Dia. Types with Solar Blind Response ...... 30 38 mm (1-1/2 ”) Dia. Dormer Window Types ...... 30 Head-On Type Photomultiplier Tubes 10 mm (3/8 ”) Dia. Types ...... 32 13 mm (1/2 ”) Dia. Types ...... 32 19 mm (3/4 ”) Dia. Types ...... 34 25 mm (1 ”) Dia. Types ...... 36 28 mm (1-1/8 ”) Dia. Types ...... 38 38 mm (1-1/2 ”) Dia. Types ...... 40 51 mm (2 ”) Dia. Types with Plastic Base ...... 42 51 mm (2 ”) Dia. Types with Glass Base ...... 44,46 76 mm (3 ”) Dia. Types ...... 48 127 mm (5 ”) Dia. Types ...... 48 Special Purpose Photomultiplier Tubes Hemispherical Envelope Types ...... 50 Special Envelope Types ...... 52,54 Tubes for High Magnetic Environments ...... 56 Position Sensitive Types ...... 58 Microchannel Plate- Photomultiplier Tubes (MCP-PMTs) ...... 60 Metal Package Photomultiplier Tubes ...... 62 Photosensor Module ...... 68 Characteristics...... 70 Voltage Distribution Ratio ...... 72 Replacement Information ...... 73 Assemblies...... 74 Accessories for Photomultiplier Tubes E678 Series Sockets...... 76 Socket Assemblies...... 78 Regulated High-Voltage Power Supplies ...... 80 Thermoelectric Coolers ...... 81 Magnetic Shield Cases ...... 81 Counters and Related Products ...... 82 Electron Multipliers Electron Multipliers...... 84 Cautions ...... 86 Warranty ...... 86 Typical Photocathode Spectral Response ...... 87 INDEX BY TYPE NO. Type No. Product Page Type No. Product Page Type No. Product Page Type numbers shown in "Notes". R105 ...... Side-on PMT ...... 26 R2083 ...... Head-on PMT ...... 44 R5900U-M4 ...... Metal Package PMT ...... 64 R212 ...... Side-on PMT ...... 26 R2102 ...... Rectangular PMT ...... 54 R5900U-L16 ...... Metal Package PMT ...... 66 R105UH ...... Side-on PMT ...... 27 R316-02 ...... Head-on PMT ...... 38 R2154-02 ...... Head-on PMT ...... 42 R5900U-C8 ...... Metal Package PMT ...... 66 R106 ...... Side-on PMT ...... 27 R329-02 ...... Head-on PMT ...... 44 E2183 Series ...... Socket Assembly ...... 79 R5912 ...... Hemispherical PMT ...... 50 R331 ...... Head-on PMT ...... 45 R331-05 ...... Head-on PMT ...... 44 R2228 ...... Head-on PMT ...... 38 R5916U Series ...... MCP-PMT ...... 60 R376 ...... Head-on PMT ...... 39 R374 ...... Head-on PMT ...... 38 R2248 ...... Rectangular PMT ...... 54 R5924 ...... Head-on PMT for Highly ...... 56 R585 ...... Head-on PMT ...... 45 R375 ...... Head-on PMT ...... 46 E2253 Series ...... Socket Assembly ...... 79 R5929 ...... Head-on PMT ...... 38 R647P ...... Head-on PMT ...... 33 R464 ...... Head-on PMT ...... 44 R2257 ...... Head-on PMT ...... 46 R5946 ...... Head-on PMT for Highly Magnetic Field ...... 56 R750 ...... Head-on PMT ...... 35 R474 ...... ...... 84 R2362 ...... Electron Multiplier ...... 84 E5996 ...... Socket Assembly ...... 79 R758-10 ...... Side-on PMT ...... 29 R515 ...... Electron Multiplier ...... 84 R2368 ...... Side-on PMT ...... 28 R6091 ...... Head-on PMT ...... 48 R760 ...... Head-on PMT ...... 33 R550 ...... Head-on PMT ...... 42 H2431-50 ...... PMT Assembly ...... 75 R6095 ...... Head-on PMT ...... 38 R762 ...... Head-on PMT ...... 35 R580 ...... Head-on PMT ...... 40 R2486-02 ...... Position-Sensitive PMT ...... 58 E6132 Series ...... Socket Assembly ...... 79 R877-01 ...... Head-on PMT ...... 49 R595 ...... Electron Multiplier ...... 84 R2487-02 ...... Position-Sensitive PMT ...... 58 E6133 Series ...... Socket Assembly ...... 79 R955 ...... Side-on PMT ...... 29 R596 ...... Electron Multiplier ...... 84 R2496 ...... Head-on PMT ...... 32 H6152-01 ...... PMT Assembly ...... 74 R960 ...... Head-on PMT ...... 33 R632-01 ...... Head-on PMT ...... 34 R2497 ...... Rectangular PMT ...... 54 H6153-01 ...... PMT Assembly ...... 74 R976 ...... Head-on PMT ...... 35 R636-10 ...... Side-on PMT ...... 28 R2557 ...... Head-on PMT ...... 32 H6156-50 ...... PMT Assembly ...... 75 R1104 ...... Head-on PMT ...... 39 R647 ...... Head-on PMT ...... 32 E2624 Series ...... Socket Assembly ...... 79 H6180 Series ...... Photon Counting Head ...... 83 R1281-02 ...... Head-on PMT ...... 35 R649 ...... Head-on PMT ...... 44 R2658 ...... Side-on PMT ...... 28 R6231 ...... Head-on PMT ...... 42 R1288-01 ...... Head-on PMT ...... 37 C659 Series ...... Thermoelectric Cooler ...... 81 R2693 ...... Side-on PMT ...... 26 R6233 ...... Head-on PMT ...... 48 R1307-01 ...... Head-on PMT ...... 49 R669 ...... Head-on PMT ...... 46 R2801 ...... Head-on PMT ...... 34 R6234 ...... Hexagonal PMT ...... 52 R1307-07 ...... Head-on PMT ...... 49 E678 Series ...... Socket ...... 76 E2924 Series ...... Socket Assembly ...... 79 R6235 ...... Hexagonal PMT ...... 52 R1463P ...... Head-on PMT ...... 33 E717 Series ...... Socket Assembly ...... 79 R2949 ...... Side-on PMT ...... 28 R6236 ...... Rectangular PMT ...... 52 R1508 ...... Head-on PMT ...... 41 R759 ...... Head-on PMT ...... 32 E2979 Series ...... Socket Assembly ...... 79 R6237 ...... Rectangular PMT ...... 52 R1509 ...... Head-on PMT ...... 41 R821 ...... Head-on PMT ...... 34 H3164-10 ...... PMT Assembly ...... 74 H6240 ...... Photon Counting Head ...... 83 R1516 ...... Side-on PMT ...... 27 E849 Series ...... Socket Assembly ...... 79 H3165-10 ...... PMT Assembly ...... 74 C6270 Series ...... Socket Assembly ...... 78 R1527P ...... Side-on PMT ...... 27 E850 Series ...... Socket Assembly ...... 79 H3177-51 ...... PMT Assembly ...... 75 R6350 ...... Side-on PMT ...... 24 R1548-02 ...... Rectangular Dual PMT ...... 55 R877 ...... Head-on PMT ...... 48 H3178-51 ...... PMT Assembly ...... 74 R6351 ...... Side-on PMT ...... 24 R1635P ...... Head-on PMT ...... 33 R928 ...... Side-on PMT ...... 28 R3234-01 ...... Head-on PMT ...... 42 R6352 ...... Side-on PMT ...... 24 R1924P ...... Head-on PMT ...... 37 E934 Series ...... Socket Assembly ...... 79 R3292-02 ...... Position-Sensitive PMT ...... 58 R6353 ...... Side-on PMT ...... 24 R1926 ...... Head-on PMT ...... 37 R943-02 ...... Head-on PMT ...... 46 R3310-02 ...... Head-on PMT ...... 46 R6354 ...... Side-on PMT ...... 30 R2027 ...... Head-on PMT ...... 35 C956 Series ...... Socket Assembly ...... 78 C3350 ...... Power Supply ...... 80 R6355 ...... Side-on PMT ...... 24 R2032 ...... Side-on PMT ...... 31 H957 Series ...... PMT Assembly ...... 75 C3360 ...... Power Supply ...... 80 R6356 ...... Side-on PMT ...... 24 R2059 ...... Head-on PMT ...... 43 R972 ...... Head-on PMT ...... 34 H3378-50 ...... PMT Assembly ...... 75 R6357 ...... Side-on PMT ...... 24 R2076 ...... Head-on PMT ...... 35 E974 Series ...... Socket Assembly ...... 79 R3478 ...... Head-on PMT ...... 34 R6358 ...... Side-on PMT ...... 24 R2220 ...... Head-on PMT ...... 43 R980 ...... Head-on PMT ...... 40 R3550 ...... Head-on PMT ...... 36 H6410 ...... PMT Assembly ...... 75 R2256-02 ...... Head-on PMT ...... 45 E989 Series ...... Magnetic Shield Case ...... 81 R3600-02 ...... Hemispherical PMT ...... 50 R6427 ...... Head-on PMT ...... 38 R2295 ...... Head-on PMT ...... 35 E990 Series ...... Socket Assembly ...... 79 R3600-06 ...... PMT Assembly ...... 75 C6465 ...... Photon Counting Unit ...... 83 R2658P ...... Side-on PMT ...... 29 R1080 ...... Head-on PMT ...... 32 H3695-10 ...... PMT Assembly ...... 74 R6504 ...... Head-on PMT for Highly Magnetic Field ...... 56 R2693P ...... Side-on PMT ...... 27 R1081 ...... Head-on PMT ...... 32 R3788 ...... Side-on PMT ...... 26 H6520 ...... PMT Assembly ...... 74 R3235-01 ...... Head-on PMT ...... 43 R1166 ...... Head-on PMT ...... 34 R3809U Series ...... MCP-PMT ...... 60 H6521 ...... PMT Assembly ...... 75 R3237-01 ...... Head-on PMT ...... 43 E1198 Series ...... Socket Assembly ...... 79 R3810 ...... Side-on PMT ...... 24 H6522 ...... PMT Assembly ...... 75 R3256 ...... Head-on PMT ...... 43 R1220 ...... Side-on PMT ...... 30 R3811 ...... Side-on PMT ...... 24 H6524 ...... PMT Assembly ...... 74 R3810P ...... Side-on PMT ...... 25 R1250 ...... Head-on PMT ...... 48 C3830 ...... Power Supply ...... 80 H6527 ...... PMT Assembly ...... 75 R3878 ...... Head-on PMT ...... 33 R1259 ...... Side-on PMT ...... 30 C3866 ...... Photon Counting Unit ...... 83 H6528 ...... PMT Assembly ...... 75 R4141 ...... Head-on PMT ...... 33 R1281 ...... Head-on PMT ...... 34 R3886 ...... Head-on PMT ...... 40 H6533 ...... PMT Assembly ...... 74 R4144 ...... Head-on PMT ...... 49 R1288 ...... Head-on PMT ...... 36 R3896 ...... Side-on PMT ...... 28 H6559 ...... PMT Assembly ...... 75 R4332 ...... Side-on PMT ...... 27 R1306 ...... Head-on PMT ...... 42 R3991 ...... Head-on PMT ...... 34 H6568 ...... PMT Assembly ...... 64 R5113-02 ...... Head-on PMT ...... 45 R1307 ...... Head-on PMT ...... 48 R3998-02 ...... Head-on PMT ...... 38 H6614-01 ...... PMT Assembly ...... 75 R5320 ...... Head-on PMT ...... 37 R1387 ...... Head-on PMT ...... 40 R4124 ...... Head-on PMT ...... 32 E6669-01 ...... Socket Assembly ...... 79 R5611 ...... Head-on PMT ...... 35 E1435 Series ...... Socket Assembly ...... 79 R4177-01 ...... Head-on PMT ...... 32 E6736 ...... Socket Assembly ...... 79 R6094 ...... Head-on PMT ...... 39 R1450 ...... Head-on PMT ...... 34 R4220 ...... Side-on PMT ...... 26 H6779 ...... Photosensor Module ...... 68 H6152-01 ...... PMT Assembly ...... 57 E1458 Series ...... Socket Assembly ...... 79 E4229 Series ...... Socket Assembly ...... 79 H6780 ...... Photosensor Module ...... 68 H6153-01 ...... PMT Assembly ...... 57 R1463 ...... Head-on PMT ...... 32 E4512 Series ...... Socket Assembly ...... 79 R6834 ...... Head-on PMT ...... 38 H6155-01 ...... PMT Assembly ...... 57 R1464 ...... Head-on PMT ...... 34 R4607-01 ...... Head-on PMT ...... 44 R6835 ...... Head-on PMT ...... 38 R6231-01 ...... Head-on PMT ...... 43 R1477-06 ...... Side-on PMT ...... 28 R4632 ...... Side-on PMT ...... 28 R6836 ...... Head-on PMT ...... 38 R6233-01 ...... Head-on PMT ...... 49 R1513 ...... Head-on PMT ...... 48 C4710 Series ...... Power Supply ...... 80 E7083 ...... Socket Assembly ...... 79 R6234-01 ...... Hexagonal PMT ...... 53 R1527 ...... Side-on PMT ...... 26 C4720 ...... Power Supply ...... 80 R7154 ...... Side-on PMT ...... 30 R6235-01 ...... Hexagonal PMT ...... 53 R1548 ...... Rectangular Dual PMT ...... 54 C4877 ...... Thermoelectric Cooler ...... 81 C7246 Series ...... Socket Assembly ...... 78 R6236-01 ...... Rectangular PMT ...... 53 R1584 ...... Head-on PMT ...... 48 C4878 ...... Thermoelectric Cooler ...... 81 C7247 Series ...... Socket Assembly ...... 78 R6237-01 ...... Rectangular PMT ...... 53 R1617 ...... Head-on PMT ...... 34 C4900 Series ...... Power Supply ...... 80 R7311 ...... Side-on PMT ...... 30 R6350P ...... Side-on PMT ...... 25 R1635 ...... Head-on PMT ...... 32 R4998 ...... Head-on PMT ...... 36 H7318 ...... PMT Assembly ...... 75 R6353P ...... Side-on PMT ...... 25 R1705 ...... Head-on PMT ...... 40 R5070 ...... Head-on PMT ...... 36 R7400U Series ...... Metal Package PMT ...... 62 R6358P ...... Side-on PMT ...... 25 E1761 Series ...... Socket Assembly ...... 79 R5108 ...... Side-on PMT ...... 28 H7415 ...... PMT Assembly ...... 74 H6614-01 ...... PMT Assembly ...... 57 R1767 ...... Head-on PMT ...... 40 R5150-10 ...... Electron Multiplier ...... 84 H7416 ...... PMT Assembly ...... 74 R7056 ...... Head-on PMT ...... 39 R1828-01 ...... Head-on PMT ...... 42 C5410 ...... Photon Counter ...... 82 H7417 ...... PMT Assembly ...... 74 R7057 ...... Head-on PMT ...... 39 R1878 ...... Head-on PMT ...... 34 R5496 ...... Head-on PMT ...... 44 R7446 ...... Side-on PMT ...... 26 R7446P ...... Side-on PMT ...... 26 R1893 ...... Head-on PMT ...... 32 R5505 ...... Head-on PMT for Highly Magnetic Field ...... 56 R7511 ...... Side-on PMT ...... 30 R7447 ...... Side-on PMT ...... 26 R1894 ...... Head-on PMT ...... 32 R5542 ...... Head-on PMT for Highly Magnetic Field ...... 56 M7824 ...... Photon Counting Board ...... 83 R1923 ...... Side-on PMT ...... 30 R5611-01 ...... Head-on PMT ...... 34 1P21 ...... Side-on PMT ...... 26 R1924 ...... Head-on PMT ...... 36 E5780 ...... Socket Assembly ...... 79 1P28 ...... Side-on PMT ...... 26 R1925 ...... Head-on PMT ...... 36 H5784 Series ...... Photosensor Module ...... 68 931A ...... Side-on PMT ...... 26 H1949-51 ...... PMT Assembly ...... 75 R5800 ...... Head-on PMT ...... 36 931B ...... Side-on PMT ...... 26 R2066 ...... Head-on PMT ...... 40 E5859 Series ...... Socket Assembly ...... 79 R2078 ...... Head-on PMT ...... 36 R5900U ...... Metal Package PMT ...... 64 2 3 PHOTOMULTIPLIER TUBES Construction and Operating Characteristics

INTRODUCTION Variants of the head-on type having a large-diameter hemi- 2) Box-and-grid type 6) Microchannel plate (MCP) Among the photosensitive devices in use today, the photo- spherical window have been developed for high energy physics This type consists of a train of quarter cylindrical The MCP is a thin disk consisting of millions of micro multiplier tube (or PMT) is a versatile device that provides ex- experiments where good angular light acceptability is important. and is widely used in head-on type photomultiplier tubes be- glass tubes (channels) fused in parallel with each other. Each tremely high sensitivity and ultra-fast response. A typical photo- cause of its relatively simple design and improved channel acts as an independent electron multiplier. The MCP multiplier tube consists of a photoemissive (photocath- Figure 2: External Appearance uniformity, although time response may be too slow in some offers much faster time response than the other discrete dy- ode) followed by focusing , an electron multiplier and a) Side-On Type b) Head-On Type applications. nodes. It also features good immunity from magnetic fields an electron collector () in a , as shown in Fig- and two-dimensional detection ability when multiple PHOTO- ure 1. SENSITIVE are used. (See pages 60 and 61 for MCP-PMTs.) AREA When light enters the photocathode, the photocathode emits photoelectrons into the vacuum. These photoelectrons are then PHOTO- TPMOC0078EA SENSITIVE directed by the focusing voltages towards the electron AREA multiplier where are multiplied by the process of sec- 3) Linear-focused type ondary emission. The multiplied electrons are collected by the TPMOC0082EA H A M A M A T S U 928 The linear-focused type features extremely fast response R 3 anode as an output signal. MA R DE IN H A S U JAPA N M A M A T 7) Metal channel type MA Because of secondary-emission multiplication, photomulti- DE IN JA PA N time and is widely used in head-on type photomultiplier tubes The Metal channel dynode has a compact dynode plier tubes provide extremely high sensitivity and exceptionally where time resolution and pulse linearity are important. costruction manufactured by our unique fine machining tech- low among the photosensitive devices currently used to nique. TPMSC0028EA TPMOC0083EA detect radiant energy in the , visible, and near It achieves high speed response due to its narrower regions. The photomultiplier tube also features fast time re- space between each stage of dynodes than the other type of sponse, low noise and a choice of large photosensitive areas. Figure 3: Types of Photocathode conventional dynode construction. a) Reflection Mode This section describes the prime features of photomultiplier TPMOC0079EA It is also adequate for position sensitive measurement. tube construction and basic operating characteristics. REFLECTION MODE PHOTOCATHODE 4) Venetian blind type ELECTRON Figures 1: Cross-Section of Head-On Type PMT The venetian blind type has a large dynode area and is DIRECTION OF LIGHT FOCUSING primarily used for tubes with large photocathode areas. It of- ELECTRODE fers better uniformity and a larger pulse output current. This PHOTOELECTRON SECONDARY TPMSC0029EA structure is usually used when time response is not a prime LAST DYNODE STEM PIN ELECTRON consideration. VACUUM b) Transmission Mode (10 -4 Pa) DIRECTION OF LIGHT e- SEMITRANSPARENT PHOTOCATHODE FACEPLATE TPMOC0084EA STEM ANODE DIRECTION ELECTORON OF LIGHT TPMOC0080EA MULTIPLIER In addition, hybrid dynodes combining two of the above dy- (DYNODES) PHOTOELECTRON 5) Mesh type nodes are available. These hybrid dynodes are designed to PHOTOCATHODE TPMHC0084EB The mesh type has a structure of fine mesh electrodes provide the merits of each dynode.

TPMHC0006EA stacked in close proximity. This type provides high immunity CONSTRUCTION ELECTRON MULTIPLIER to magnetic fields, as well as good uniformity and high pulse The photomultiplier tube generally has a photocathode in ei- The superior sensitivity (high gain and high S/N ratio) of pho- linearity. In addition, it has position-sensitive capability when SPECTRAL RESPONSE ther a side-on or a head-on configuration. The side-on type re- tomultiplier tubes is due to the use of a low-noise electron multi- used with cross- anodes or multiple anodes. (See pages The photocathode of a photomultiplier tube converts energy ceives incident light through the side of the glass bulb, while in plier which amplifies electrons by a cascade secondary electron 58 and 59.) of incident light into photoelectrons. The conversion efficiency (photocathode sensitivity) varies with the wavelength of the inci- the head-on type, it is received through the end of the glass bulb. emission process. The electron multiplier consists of from 8, up dent light. This relationship between photocathode sensitivity In general, the side-on type photomultiplier tube is relatively low to 19 stages of electrodes called dynodes. and wavelength is called the spectral response characteristic. priced and widely used for spectrophotometers and general pho- There are several principal types in use today. Figure 4 shows the typical spectral response of a bialkali photo- tometric systems. Most of the side-on types employ an opaque 1) Circular-cage type multiplier tube. The spectral response characteristics are deter- photocathode (reflection-mode photocathode) and a circular- The circular-cage is generally used for the side-on type of photomultiplier tube. The prime features of the circular-cage mined on the long wavelength side by the photocathode material cage structure electron multiplier which has good sensitivity and and on the short wavelength side by the window material. Typi- are compactness and fast time response. high gain at a relatively low supply voltage. cal spectral response characteristics for various types of photo- ELECTRON ELECTRON The head-on type (or the end-on type) has a semitransparent ELECTRON multiplier tubes are shown on pages 88 and 89. In this catalog, photocathode (transmission-mode photocathode) deposited the longwavelength cut-off of spectral response characteristics upon the inner surface of the entrance window. The head-on is defined as the wavelength at which the cathode radiant sensi- type provides better spatial uniformity (see page 10) than the tivity becomes 1 % of the maximum sensitivity for bialkali and side-on type having a reflection-mode photocathode. Other fea- Ag-O-Cs , and 0.1 % of the maximum sensitivity tures of head-on types include a choice of photosensitive areas for multialkali photocathodes. from tens of square millimeters to hundreds of square centime- COARSE MESH TYPE FINE-MESH TYPE Spectral response characteristics shown at the end of this ters. TPMOC0077EB catalog are typical curves for representative tube types. Actual TPMOC0081EA data may be different from type to type. 4 5 Figure 4: Typical Spectral Response of Head-On, Bialkali 6) High temperature bialkali or low noise bialkali Figure 5: Typical Transmittance of Various Window Materials Hamamatsu final test sheets accompanying the tubes usually in- Photocathode (Na-K-Sb) dicate these parameters except for tubes with Cs-I or Cs-Te pho- tocathodes, which are not sensitive to lamp light. (Radi- This is particularly useful at higher operating tempera- 100 100 tures since it can withstand up to 175 °C. A major application ant sensitivity at a specific wavelength is listed for those tubes is in the oil industry. At room temperatures, this instead.) photocathode operates with very low , making it Both the cathode and anode luminous sensitivities are ex- BOROSILICATE 10 pressed in units of A/lm (amperes per lumen). Note that the lu- ideal for use in photon counting applications. UV- GLASS TRANSMITTING 7) Multialkali (Na-K-Sb-Cs) GLASS men is a unit used for luminous flux in the visible region and 10 The multialkali photocathode has a high, wide spectral re- MgF2 therefore these values may be meaningless for tubes which are CATHODE RADIANT sponse from the ultraviolet to near infrared region. It is widely sensitive beyond the visible region. (For those tubes, the blue 1 SENSITIVITY SYNTHETIC QUARTZ sensitivity or red/white ratio is often used.)

used for broad-band spectrophotometers. The long wave- TRANSMITTANCE (%) length response can be extended out to 930 nm by special Figure 6: Typical Human Eye Response and Spectral QUANTUM EFFICIENCY (%) QUANTUM EFFICIENCY photocathode processing. 0.1 1 Energy Distribution of 2856 K Tungsten Lamp 8) Cs-Te, Cs-I 100 120 160 200 240 300 400 500 CATHODE RADIANT SENSITIVITY (mA/W) CATHODE RADIANT These materials are sensitive to vacuum UV and UV rays WAVELENGTH (nm) 100 but not to visible light and are therefore called solar blind. Cs- TPMOB0076EB 0.01 Te is quite insensitive to wavelengths longer than 320 nm, 200 400 600 800 TUNGSTEN 80 and Cs-I to those longer than 200 nm. As stated above, spectral response range is determined by LAMP WAVELENGTH (nm) AT 2856 K the photocathode and window materials. It is important to select TPMOB0070EA WINDOW MATERIALS an appropriate combination which will suit your applications. 60 The window materials commonly used in photomultiplier PHOTOCATHODE MATERIALS tubes are as follows: 40 The photocathode is a photoemissive surface usually con- 1) RADIANT SENSITIVITY AND QUANTUM EFFICIENCY VISUAL SENSITIVITY RELATIVE VALUE (%) sisting of alkali metals with very low work functions. The photo- This is frequently used glass material. It transmits radia- As Figure 4 shows, spectral response is usually expressed in 20 cathode materials most commonly used in photomultiplier tubes tion from the near infrared to approximately 300 nm. It is not terms of radiant sensitivity or quantum efficiency as a function of are as follows: suitable for detection in the ultraviolet region. For some appli- wavelength. Radiant sensitivity (S) is the photoelectric current 0 200 400 600 800 1000 1200 1400 1) Ag-O-Cs cations, the combination of a bialkali photocathode and a from the photocathode, divided by the incident radiant power at a The transmission-mode photocathode using this material low-noise borosilicate glass (so called K-free glass) is used. given wavelength, expressed in A/W (amperes per watt). Quan- WAVELENGTH (nm) TPMOB0054EC is designated S-1 and sensitive from the visible to infrared The K-free glass contains very low (K2O) which tum efficiency (QE) is the number of photoelectrons emitted from range (300 nm to 1200 nm). Since Ag-O-Cs has compara- can cause background counts by 40K. In particular, tubes de- the photocathode divided by the number of incident . It is BLUE SENSITIVITY INDEX AND RED/WHITE RATIO tively high thermionic dark emission (refer to "ANODE DARK signed for scintillation counting often employ K-free glass not customary to present quantum efficiency in a percentage. Quan- For simple comparison of spectral response of photomulti- CURRENT" on page 8), tubes of this photocathode are only for the faceplate but also for the side bulb to minimize tum efficiency and radiant sensitivity have the following relation- plier tubes, cathode blue sensitivity index and red/white ratio are mainly used for detection in the near infrared region with the noise pulses. ship at a given wavelength. often used. photocathode cooled. 2) UV-transmitting glass (UV glass) The cathode blue sensitivity index is the photoelectric current S × 1240 2) GaAs(Cs) This glass transmits ultraviolet radiation well, as the name QE = × 100 % λ from the photocathode produced by a light flux of a tungsten GaAs activated in cesium is also used as a photocathode. implies, and is widely used as a borosilicate glass. For spec- lamp at 2856 K passing through a blue filter (Corning CS-5-58 The spectral response of this photocathode usually covers a troscopy applications, UV glass is commonly used. The UV Where S is the radiant sensitivity in A/W at the given wavelength, polished to half stock thickness). Since the light flux, once trans- λ wider spectral response range than multialkali, from ultraviolet cut-off is approximately 185 nm. and is the wavelength in nm (nanometers). mitted through the blue filter cannot be expressed in lumens. The to 930 nm, which is comparatively flat over 300 nm to 850 nm. 3) Synthetic silica blue sensitivity is an important parameter in scintillation counting 3) InGaAs(Cs) The synthetic silica transmits ultraviolet radiation down to using an NaI (Tl) since the NaI (Tl) scintillator pro- This photocathode has greater extended sensitivity in the 160 nm and offers lower absorption in the ultraviolet range LUMINOUS SENSITIVITY duces emissions in the blue region of the spectrum, and may be infrared range than GaAs. Moreover, in the range between compared to fused silica. Since thermal expansion coefficient Since the measurement of the spectral response characteris- the decisive factor in energy resolution. 900 nm and 1000 nm, InGaAs has much higher S/N ratio of the synthetic silica is different from Kovar which is used for tic of a photomultiplier tube requires a sophisticated system and The red/white ratio is used for photomultiplier tubes with a than Ag-O-Cs. the tube leads, it is not suitable for the stem material of the much time, it is not practical to provide customers with spectral spectral response extending to the near infrared region. This pa- 4) Sb-Cs tube (see Figure 1 on page 4). Borosilicate glass is used for response characteristics for each tube ordered. Instead cathode rameter is defined as the quotient of the cathode sensitivity mea- This is a widely used photocathode and has a spectral the stem, then a graded seal using glasses with gradually or anode luminous sensitivity is commonly used. sured with a light flux of a tungsten lamp at 2856 K passing response in the ultraviolet to visible range. This is not suited different thermal expansion coefficients are connected to the The cathode luminous sensitivity is the photoelectric current from through a red filter (Toshiba IR-D80A for the S-1 photocathode or for transmission-mode photocathodes and mainly used for synthetic silica window. Because of this structure, the graded the photocathode per incident light flux (10-5 lumens to 10-2 lu- R-68 for others) divided by the cathode luminous sensitivity with reflection-mode photocathodes. seal is vulnerable to mechanical shock so that sufficient care mens) from a tungsten filament lamp operated at a distribution the filter removed. 5) Bialkali (Sb-Rb-Cs, Sb-K-Cs) should be taken in handling the tube. temperature of 2856 K. The anode luminous sensitivity is the an- These have a spectral response range similar to the Sb- 4) MgF2 (magnesium fluoride) ode output current (amplified by the pro- Cs photocathode, but have higher sensitivity and lower noise The crystals of alkali halide are superior in transmitting cess) per incident light flux (10-10 lumens to 10-5 lumens) on the than Sb-Cs. The transmission mode bialkali photocathodes ultraviolet radiation, but have the disadvantage of deliques- photocathode. Although the same tungsten lamp is used, the also have a favorable blue sensitivity for scintillator flashes cence. Among these, MgF2 is known as a practical window light flux and the applied voltage are adjusted to an appropriate from NaI (Tl) , thus are frequently used for radia- material because it offers low deliquescence and transmits level. These parameters are particularly useful when comparing tion measurement using scintillation counting. ultraviolet radiation down to 115 nm. tubes having the same or similar spectral response range. 6 7 Figure 8: Typical Gain vs. Supply Voltage Figure 7: Transmittance of Various Filters ANODE DARK CURRENT low dark counts are essential such as in photon counting. 4) Leakage current (ohmic leakage)

104 109 Figure 10 shows the relationship between dark current Leakage current resulting from the glass stem base and 100 and temperature for various photocathodes. Photocathodes socket may be another source of dark current. This is pre- TOSHIBA R-68 which have high sensitivity in the red to infrared region, espe- dominant when the photomultiplier tube is operated at a low 103 ANODE LUMINOUS 108 80 CORNING SENSITIVITY cially S-1, show higher dark current at room temperature. voltage or low temperature. The flatter slopes in Figures 9 CS-5-58 (1/2 STOCK Hamamatsu provides thermoelectric coolers (C659 and and 10 are mainly due to leakage current. 2 7 60 THICKNESS) 10 10 C4877) designed for various sizes of photomultiplier tubes Contamination from dirt and moisture on the surface of the (see page 81). tube may increase the leakage current, and therefore should 40 101 106 be avoided. GAIN

TRANSMITTANCE (%) TRANSMITTANCE Figure 10: Temperature Characteristics of Dark Current 5) Field emission TOSHIBA 20 10-5 IR-D80A 100 105 When a photomultiplier tube is operated at a voltage near the maximum rated value, electrons may be emitted from elec- 10-6 trodes by the strong electric field and may cause noise pulses. 0 ANODE LUMINOUS SENSITIVITY (A / lm) R316 10-1 104 200 400 600 800 1000 1200 (HEAD-ON TYPE, Ag-O-Cs) It is therefore recommended that the tube be operated at a - WAVELENGTH (nm) 10-7 GAIN age 20 % to 30 % lower than the maximum rating. TPMOB0055EB 10-2 103 200 300 500 700 1000 1500 10-8 R374 The anode dark current decreases with time after the tube is (HEAD-ON TYPE, MULTIALKALI) placed in a dark state. In this catalog, anode dark currents SUPPLY VOLTAGE (V) 10-9 are measured after 30 minute storage in a dark state. GAIN (CURRENT AMPLIFICATION ) TPMOB0058EB Photoelectrons emitted from a photocathode are accelerated 10-10 by an electric field so as to strike the first dynode and produce A small amount of current flows in a photomultiplier tube even ENI (EQUIVALENT NOISE INPUT) when the tube is operated in a completely dark state. This output ANODE DARK CURRENT (A) 10-11 secondary electron emissions. These secondary electrons then R3550 ENI is an indication of the photon-limited signal-to-noise ratio. impinge upon the next dynode to produce additional secondary current, called the anode dark current, and the resulting noise (HEAD-ON TYPE, 10-12 LOW-NOISE BIALKALI) It refers to the amount of light usually in watts or lumens neces- are critical factors in determining the detectivity of a photomulti- electron emissions. Repeating this process over successive dy- R6095 sary to produce a signal-to-noise ratio of unity in the output of a plier tube. As Figure 9 shows, dark current is greatly dependent (HEAD-ON TYPE, BIALKALI) node stages, a high gain is achieved. A very small photoelectric 10-13 photomultiplier tube. ENI is expressed in units of lumens or watts. on the supply voltage. -60-40 -20 0 20 40 current from the photocathode can be observed as a large output For example the value of ENI (in watts) is given by current from the anode of the photomultiplier tube. TEMPERATURE (°C) Gain is simply the ratio of the anode output current to the Figure 9: Typical Dark Current vs. Supply Voltage TPMOB0065EB 2q ⋅ Idb ⋅ µ ⋅ ∆f photoelectric current from the photocathode. Ideally, the gain of ENI = (watts or lumens) a photomultiplier tube having n dynode stage and an average Major sources of dark current may be categorized as follows: 2) Ionization of residual gases (ion feedback) S δ δn (AFTER 30 MINUTE STORAGE) Residual gases inside a photomultiplier tube can be ion- secondary emission ratio per stage is . While the secondary 101 where ized by collision with electrons. When these ions strike the electron emission ratio δ is given by q = electronic charge (1.60 × 10-19 coul.) photocathode or earlier stages of dynodes, secondary elec- Idb = anode dark current in amperes after 30 minute δ = A ⋅ Eα trons may be emitted, thus resulting in relatively large output storage in darkness 100 noise pulses. These noise pulses are usually observed as µ = current amplification ∆f = bandwidth of the system in hertz (usually 1 hertz) where A is constant, E is an interstage voltage, and α is a coeffi- afterpulses following the primary signal pulses and may be a S = anode radiant sensitivity in amperes per watt at problem in detecting light pulses. Present photomultiplier cient determined by the dynode material and geometric struc- the wavelength of interest or anode luminous ture. It usually has a value of 0.7 to 0.8. 10-1 tubes are designed to minimize afterpulses. sensitivity in amperes per lumen When a voltage V is applied between the cathode and the anode 3) Glass scintillation of a photomultiplier tube having n dynode stages, current amplifi- When electrons deviating from their normal trajectories For the tubes listed in this catalog, the value of ENI may be calcu- µ strike the glass envelope, scintillations may occur and dark -15 cation, , becomes ANODE DARK CURRENT (nA) lated by the above equation. Usually it has a value between 10 -2 10 pulses may result. To minimize this type of dark pulse, photo- and 10-16 watts or lumens. V α n µ = δn = (A ⋅ Eα)n = A⋅ multiplier tubes may be operated with the anode at high volt- { ()n + 1 } age and the cathode at ground potential. But this is inconve- An = ⋅ αn ⋅ αn αn V = K V 10-3 nient to handle the tube. To obtain the same effect without MAGNETIC FIELD EFFECTS (n + 1) 400 600 800 1000 1200 1400 difficulty, Hamamatsu provides "HA coating" in which the Most photomultiplier tubes are affected by the presence of APPLIED VOLTAGE (V) Since photomultiplier tubes generally have 9 to 12 dynode glass bulb is coated with a conductive paint connected to the magnetic fields. Magnetic fields may deflect electrons from their TPMOB0071EA stages, the anode output varies directly with the 6th to 10th cathode. (See "GROUND POLARITY AND HA COATING" normal trajectories and cause a loss of gain. The extent of the power of the change in applied voltage. The output signal of the 1) of electrons on page 13.) loss of gain depends on the type of photomultiplier tube and its photomultiplier tube is extremely susceptible to fluctuations in Since the materials of the photocathode and dynodes orientation in the magnetic field. Figure 11 shows typical effects the power supply voltage, thus the power supply must be very have very low work functions, they emit thermionic electrons of magnetic fields on some types of photomultiplier tubes. In gen- stable and provide minimum ripple, drift and temperature coeffi- even at room temperature. Most of dark currents originate eral, tubes having a long path from the photocathode to the first cient. Various types of regulated high-voltage power supplies from the thermionic emissions, especially those from the dynode are very vulnerable to magnetic fields. Therefore head- designed with this consideration are available from Hamamatsu photocathode as they are multiplied by the dynodes. Cooling on types, especially large diameter tubes, tend to be more ad- (see page 80). the photocathode is most effective in reducing thermionic versely influenced by magnetic fields. emission and, this is particularly useful in applications where

8 9 Figure 11: Typical Effects by Magnetic Fields Perpendicular Hamamatsu provides photomultiplier tubes using fine mesh TEMPERATURE CHARACTERISTICS DRIFT AND LIFE CHARACTERISTIC to Tube Axis dynodes (see page 56). These tube types (see page 56) exhibit By decreasing the temperature of a photomultiplier tube, While operating a photomultiplier tube continuously over a much higher immunity to external magnetic fields than the photo- dark current originating from thermionic emission can be re- long period, anode output current of the photomultiplier tube may 120 multiplier tubes using other dynodes. In addition, when the light duced. Sensitivity of the photomultiplier tube also varies with the vary slightly with time, although operating conditions have not

110 28 mm dia. level to be measured is rather high, or type photo- temperature. In the ultraviolet to visible region, the temperature changed. This change is reffered to as drift or in the case where SIDE - ON TYPE multiplier tubes can be used in hishly magnetic fields. coefficient of sensitivity usually has a negative value, while near 3 4 100 the operating time is 10 hours to 10 hours it is called life charac- the long wavelength cut-off it has a positive value. Figure 14 teristics. Figure 16 shows typical life characteristics. 90 shows temperature coefficients vs. wavelength of typical photo- Drift is primarily caused by damage to the last dynode by 80

(%) SPATIAL UNIFORMITY multiplier tubes. Since the temperature coefficient change is heavy electron bombardment. Therefore the use of lower anode 70 Spatial uniformity is the variation of sensitivity with position of large near the long wavelength cutoff, temperature control may current is desirable. When stability is of prime importance, the 60 incident light on a photocathode. be required in some applications. use of average anode current of 1 µA or less is recommended. 13 mm dia. HEAD - ON TYPE 50 LINEAR - FOCUSED Although the focusing electrodes of a photomultiplier tube ( TYPE DYNODE ) 40 are designed so that electrons emitted from the photocathode or Figure 16: Examples of Life

RELATIVE OUTPUT Figure 14: Typical Temperature Coefficients of Anode Sen-

30 38 mm dia. dynodes are collected efficiently by the first or following dynodes, sitivity HEAD - ON TYPE CIRCULAR CAGE ( TYPE DYNODE ) some electrons may deviate from their desired trajectories in the 20 1.5 PMT:R1924 focusing and multiplication processes, resulting in a loss of col- SUPPLY VOLTAGE:1000 V µ 10 lection efficiency. This loss of collection efficiency varies with the INITIAL ANODE CURRENT:10 A C] ° 0 1 BIALKALI -0.5 -0.4 -0.3 -0.2 -0.10 0.10.2 0.3 0.4 0.5 position on the photocathode from which the photoelectrons are MULTIALKALI 100 emitted and influences the spatial uniformity of a photomultiplier Sb-Cs TPMOB0017EB MAGNETIC FLUX DENSITY (mT) tube. The spatial uniformity is also determined by the photocath- 0.5 Cs-Te GaAs (Cs) When a tube has to be operated in magnetic fields, it may be ode surface uniformity itself. 50 necessary to shield the tube with a magnetic shield case. In general, head-on type photomultiplier tubes provide better 0 Hamamatsu provides a variety of magnetic shield cases (see spatial uniformity than side-on types because of the photocath- TEMPERATURE COEFFICIENT FOR ANODE SENSITIVITY [% Ag-O-Cs

ode to first dynode geometry. Tubes especially designed for RELATIVE ANODE CURRENT (%) page 81). To express the effect of a magnetic shield case, the -0.5 applications have excellent spatial uniformity, MULTIALKALI Sb-Cs magnetic shielding factor is used. This is the ratio of the strength 0 because uniformity is the decisive factor in the overall perfor- 1 10 100 1000 10000 of the magnetic field outside the shield case, Hout, to that inside -1 200 300 400 500 600 700 800 900 1000 1100 1200 the shield case, Hin. It is determined by the permeability µ, the mance of a gamma camera. TIME (hour) WAVELENGTH [nm] thickness t (mm) and inner diameter D (mm) of the shield case, TPMHB0448EA TPMOB0013EB as follows: Figure 13: Examples of Spatial Uniformity (a) Head-On Type (b) Side-On Type TIME RESPONSE Hout 3 µt (R6231-01 for gamma camera applications)Reflection-mode photocathode In the measurement of pulsed light, the anode output signal = HYSTERESIS Hin 4 D should reproduce a waveform faithful to the incident pulse wave- 100 A photomultiplier tube may exhibit an unstable output for sev- PHOTO- form. This reproducibility is greatly affected by the electron tran- It should be noted that the magnetic shielding effect de- CATHODE ANODE eral seconds to several tens of seconds after voltage and light sit time, anode pulse rise time, and electron transit time spread (TOP VIEW) 50 SENSITIVITY (%) creases towards the edge of the shield case as shown in Figure are applied, i.e., output may slightly overshoot or undershoot be- (TTS). 050 100 12. It is recommended that the tube be covered by a shield case 0 fore reaching a stable level (Figure 15). This instability is called

ANODE SENSITIVITY (%) As illustrated in Figure 17, the electron transit time is the time longer than the tube length by at least half the tube diameter. hysteresis and may be a problem in and interval between the arrival of a delta function light pulse (pulse other applications. width less than 50 ns) at the photocathode and the instant when Figure 12: Edge Effect of Magnetic Shield Case Hysteresis is mainly caused by electrons being deviated from the anode output pulse reaches its peak amplitude. The anode PHOTO- pulse rise time is defined as the time required to rise from 10 % 100 CATHODE their planned trajectories and electrostatically charging the dy- EDGE EFFECT node support ceramics and glass bulb. When the applied voltage to 90 % of the peak amplitude when the whole photocathode is

t LONGER than r is changed as the light input changes, marked hysteresis can illuminated by a delta function light pulse (pulse width less than 50 50 ps). The electron transit time has a fluctuation between indi- GUIDE KEY occur. As a countermeasure, many Hamamatsu side-on photo- vidual light pulses. This fluctuation is called transit time spread multiplier tubes employ "anti-hysteresis design" which virtually 2r PHOTOMULTIPLIER TUBE 0 (TTS) and defined as the FWHM of the frequency distribution of ANODE SENSITIVITY (%) eliminate hysteresis. electron transit times (Figure 18) at single photoelectron event. L (R6231-01 for gamma camera applications) The TTS is an important factor in time-resolved measurement. 1000 Figure 15: Hysteresis Measurement The time response characteristics depend on the dynode 100 TPMHC0085EB TPMSC0030EC structure and applied voltage. In general, tubes of the linear-fo-

10 cused or circular-cage structure exhibit better time response

SHIELDING FACTOR (Ho/Hi) SHIELDING FACTOR than tubes of the box-and-grid or venetian blind structure. MCP- 1 r r PMTs, which employ an MCP in place of conventional dynodes, offer better time response than tubes using other dynodes. For TPMOB0011EA I max. Ii example, the TTS can be significantly improved compared to I min. normal photomultiplier tubes because a nearly parallel electric ANODE CURRENT field is applied between the photocathode, MCP and the anode. 0567 Figure 19 shows typical time response characteristics vs. ap- TIME (MINUTE) plied voltage for types R2059 (51 mm dia. head-on, 12-stage, TPMOC0071EA linear-focused type) . 10 11 Figure 17: Anode Pulse Rise Time and Electron Transit Time VOLTAGE-DIVIDER CONSIDERATION Generally high output current is required in pulsed light appli- the housing for a photomultiplier tube and when using an electro- Interstage voltages for the dynodes of a photomultiplier tube cations. In order to maintain dynode potentials at a constant static or magnetic shield case, extreme care is required. DELTA FUNCTION LIGHT are usually supplied by a voltage-divider circuits consisting of value during pulse durations and obtain high peak currents, large In addition, when using foam rubber or similar material to series-connected . Schematic diagrams of typical volt- are used as shown in Figure 20 (b). The val- mount the tube in its housing, it is essential that material having RISE TIME FALL TIME age-divider circuits are illustrated in Figure 20. Circuit (a) is a ues depend on the output charge. If linearity of better than 1 % is sufficiently good insulation properties be used. This problem can basic arrangement (DC output) and (b) is for pulse operations. needed, the capacitor value should be at least 100 times the out- be solved by applying a black conductive layer around the bulb 10 % ANODE Figure 21 shows the relationship between the incident light level put charge per pulse, as follows: and connecting to the cathode potential (called HA Coating), as OUTPUT 90 % SIGNAL and the average anode output current of a photomultiplier tube shown in Figure 23. TRANSIT TIME I ⋅ t using the voltage-divider circuit (a). Deviation from the ideal lin- C>100 (farads) As mentioned above, the HA coating can be effectively used V earity occurs at a certain incident level (region B). This is caused to eliminate the effects of external potential on the side of the TPMOB0060EB by an increase in dynode voltage due to the redistribution of the where I is the peak output current in amperes, it is the pulse width bulb. However, if a grounded object is located on the photocath- voltage loss between the last few stages, resulting in an appar- in seconds, and V is the voltage across the capacitor in . ode faceplate, there are no effective countermeasures. Glass In high energy physics applications where a high pulse output is scintillation, if it occurrs in the faceplate, has a larger influence on Figure 18: Electron Transit Time Spread (TTS) ent increase in sensitivity. As the input light level is increased, the anode output current begins to saturate near the value of the required, as the incident light is increased while the interstage volt- the noise. It also causes deterioration of the photocathode sensi- current flowing through the (region C). Therefore, age is kept fixed, output saturation will occur at a certain level. This tivity and, once deteriorated, the sensitivity will never recover to

TYPE NO. : R2059 ∗FWHM=550 ps it is recommended that the voltage-divider current be maintained is caused by an increase in the electron density between the the original level. To solve these problems, it is recommended 4 10 ∗FWTM=1228 ps at least at 20 times the average anode output current required electrodes, causing effects which disturb the elec- that the photomultiplier tube be operated in the cathode ground from the photomultiplier tube. tron current. As a corrective action to overcome space charge scheme, as shown in Figure 24, with the anode at a positive high 103 effects, the voltage applied to the last few stages, where the elec- voltage. For example, in scintillation counting, since the

102 Figure 20: Schematic Diagrams of Voltage-Divider Circuits tron density becomes high, should be set at a higher value than grounded scintillator is directly coupled to the photomultiplier (a) Basic arrangement for DC operation the standard voltage distribution so that the voltage gradient be- tube, it is recommended that the cathode be grounded, with a

101 PHOTOCATHODE tween those electrodes is enhanced. For this purpose, a so- high positive voltage applied to the anode. Using this scheme, a

RELATIVE COUNT RELATIVE ANODE called tapered divider circuit (Figure 22) is often employed. Use coupling capacitor Cc is used to separate the high positive volt- 100 of this tapered divider circuit improves pulse linearity 5 to 10 age applied to the anode from the signal, making it impossible to times better than that obtained with normal divider circuits obtain a DC signal output. 1R 1R 1R 1R 1R 1R 1R 1R 1R 1R 1R -5 -4 -3 -2 -1 0 1 2 3 4 5 (equally divided circuits). -HV Hamamatsu provides a variety of socket assemblies incorpo- Figure 23: HA Coating TIME [ns] (b) For pulse operation rating voltage-divider circuits. They are compact, rugged, light- PHOTOCATHODE TPMHB0126EC ANODE weight and ensure the maximum performance for a photomulti- GLASS BULB plier tube by simple wiring. CONDUCTIVE PAINT (SAME POTENTIAL AS CATHODE) Figure 19: Time Response Characteristics vs. Supply 1R 1R 1R 1R 1R 1R 1R 1R 1R 1R 1R Figure 22: Tapered Divider Circuit Voltage -HV C1 C2 C3 INSULATING

TYPE NO. : R2059 TACCC0030EB PHOTOCATHODE ANODE PROTECTIVE COVER 10 2 SIGNAL OUTPUT TRANSIT TIME RL CONNECTED TO CATHODE PIN 1R 1R 1R 1R 2R 3R 2.5R

Figure 21: Output Characteristics of a PMT Using Voltage- C1 C2 C3 TPMOC0015EA Divider Circuit (a) 10 1 -HV 10 TACCC0035EB Figure 24: Cathode Ground Scheme

C RISE TIME PHOTOCATHODE ANODE TIME (ns) 1.0 GROUND POLARITY AND HA COATING Cc SIGNAL B OUTPUT 10 0 ACTUAL The general technique used for voltage-divider circuits is to CURVE ground the anode with a high negative voltage applied to the

T. T. S 0.1 R1 R2 R3 R4 R5 R6 R7 IDEAL cathode, as shown in Figure 20. This scheme facilitates the con- TACCC0036EB CURVE nection of such circuits as ammeters or current-to-voltage con- +HV

TO DIVIDER CURRENT version operational to the photomultiplier tube. How- 0.01 A 500 1000 1500 20002500 3000 ever, when a grounded anode configuration is used, bringing a

SUPPLY VOLTAGE (V) RATIO OF AVERAGE OUTPUT CURRENT grounded metallic holder or magnetic shield case near the bulb TPMOB0059EB 0.001 of the tube can cause electrons to strike the inner bulb wall, re- 0.001 0.01 0.1 1.0 10

TACCB0005EA sulting in the generation of noise. Also, for head-on type photo- LIGHT FLUX (A.U.) multiplier tubes, if the faceplate or bulb near the photocathode is grounded, the slight conductivity of the glass material causes a current to flow between the photocathode (which has a high negative potential) and ground. This may cause significant dete- rioration of the photocathode. For this reason, when designing 12 13 SINGLE PHOTON COUNTING A typical pulse height distribution (PHD) for the output of pho- which contain information on both the energy and amount of c) 60Co+NaI (Tl) Photon counting is one effective way to use a photomultiplier tomultiplier tubes is shown in Figure 28. In this PHD, the lower pulses, as shown in Figure 30. By analyzing these output pulses × tube for measuring very low light levels. It is widely used in astro- level discrimination (LLD) is set at the valley trough and the up- using a multichannel analyzer (MCA), a pulse height distribution 10000 ( 51 mm dia. 51 mm t ) nomical photometry and chemiluminescence or biolumines- per level discrimination (ULD) at the foot where the output pulses (PHD) or energy spectrum is obtained, and the amount of inci- cence measurement. In the usual application, a number of pho- are very few. Most pulses smaller than the LLD are noise and dent particles at various energy levels can be measured accu- 5000 tons enter the photomultiplier tube and create an output pulse pulses larger than the ULD result from cosmic rays, etc. There- rately. Figure 31 shows typical PHDs or energy spectra when COUNTS train like (a) in Figure 25. The actual output obtained by the mea- fore, by counting pulses between the LLD and ULD, accurate gamma rays (55Fe, 137Cs, 60Co) are detected by the combination surement circuit is a DC current with a fluctuation as shown at light measurements becomes possible. In the PHD, Hm is the of an NaI(Tl) scintillator and a photomultiplier tube. For the PHD, mean height of the pulses. It is recommended that the LLD be set it is very important to have distinct peaks at each energy level. 0500 1000 (b). CHANNEL NUMBER at 1/3 of Hm and the ULD at triple Hm. In most cases, however, This is evaluated as pulse height resolution (energy resolution) Figure 25: Overlapping Output Pulses the ULD setting can be omitted. and is the most significant characteristic in radiation particle TPMOB0087EB (a) Considering the above, a clear definition of the peak and val- measurements. Figure 32 shows the definition of energy resolu- ley in the PHD is a very significant characteristic for photomulti- tion taken with a 137Cs source. Figure 32: Definition of Energy Resolution plier tubes for use in photon counting. Figure 30: Incident Particles and PMT Output TIME Figure 28: Typical Pulse Height Distribution b (b) TIME

a SIGNAL PULSE + NOISE PULSE H

TIME H NOISE PULSE NUMBER OF PULSES 2 TPMOC0073EA SCINTILLATOR

THE HEIGHT OF OUTPUT PULSE HEIGHT COUNTS PULSE IS PROPORTIONAL PMT TO THE ENERGY OF a When the light intensity becomes so low that the incident Pulse Height Resolution (FWHM)= Ð ×100 % INCIDENT PARTICLE. b photons are separated as shown in Figure 26. This condition is called a single photon (or photoelectron) event. The number of LLD Hm ULD output pulses is in direct proportion to the amount of incident light PULSE HEIGHT TPMOB0088EB and this pulse counting method has advantages in S/N ratio and TPMOC0076EA stability over the DC method averaging all the pulses. This pulse counting technique is known as the photon counting method.

SCINTILLATION COUNTING CURRENT TIME Figure 33: Spectral Response of PMT and Spectral Emis- Figure 26: Discrete Output Pulses (Single Photon Event) Scintillation counting is one of the most sensitive and effec- TPMOC0039EA sion of Scintillators tive methods for detecting radiation. It uses a photomultiplier tube coupled to a transparent crystal called scintillator which pro- 102 duces light by incidence of radiation. BGO

TIME CsI (Tl) Figure 29: Diagram of Scintillation Figure 31: Typical Pulse Height Distributions (Energy Spectra) BaF2 TPMOC0074EA 55 NaI (Tl) a) Fe+NaI (Tl) 1 REFLECTIVE PHOTOCATHODE 10 COATING Since the photomultiplier tube output contains a variety of PHOTOELECTRONS 1000 ( 51 mm dia. × 51 mm t ) noise pulses in addition to the signal pulses representing photo- ANODE BIALKALI electrons as shown in Figure 27, simply counting the pulses with- DYNODES 100 out some form of noise elimination will not result in an accurate RADIATION SOURCE 500 QUANTUM EFFICIENCY (%) COUNTS

measurement. The most effective approach to noise elimination OF VARIOUS SCINTILLATOR (%) is to investigate the height of the output pulses. RELATIVE EMISSION DISTRIBUTION SCINTILLATOR PMT OPTICAL COUPLING 10-1 (USING SILICONE OIL etc.) 0500 1000 200 300 400 500 600 700 800 Figure 27: Output Pulse and Discrimination Level CHANNEL NUMBER WAVELENGTH (nm) 137 TPMHC0052EB b) Cs+NaI (Tl) TPMOB0073EA DARK CURRENT COSMIC RAY PULSE PULSE In radiation measurements, there are two parameters that 10000 ( 51 mm dia. × 51 mm t )

ULD should be measured. One is the energy of individual particles Pulse height resolution is mainly determined by the quantum PULSE HEIGHT SIGNAL PULSE and the other is the amount of particles. Radiation measure- efficiency of the photomultiplier tube in response to the scintilla- ments should determine these two parameters. 5000 tor emission. It is necessary to choose a tube whose spectral COUNTS response matches with the scintillator emission. In the case of LLD When radiation enters the scintillator, it produce light flashes in response to each particle. The amount of flash is proportional thallium-activated iodide, or NaI(Tl), which is the most

TIME to the energy of the incident racliation. The photomultiplier tube 0500 1000 popular scintillator, head-on type photomultiplier tube with a CHANNEL NUMBER TPMOC0075EB detects individual light flashes and provides the output pulses bialkali photocathode is widely used. 14 15 Connections to External Circuits

LOAD RESISTANCE alone. From this we see that the upper limit of the load resis- Figure 36: Typical Connections Used to Prevent Ringing This relationship is derived for the following reason. If the Since the output of a photomultiplier tube is a current signal tance is actually the input resistance of the and that input impedance of the is extremely large, 50 Ω OR 75 Ω COAXIAL CABLE and the output current of the photomultiplier tube is allowed to and the type of external circuit to which photomultiplier tubes are making the load resistance much greater than this value does PMT R L flow into the input terminal of the amplifier, most of the current usually connected has voltage inputs, a load resistance is used not have significant effect. While the above description assumed Ω Ω (50 OR 75 will flow through Rf and subsequently to the operational amplifier the load and input impedances to be purely resistive, in practice, 50 Ω OR 75 Ω CONNECTOR MATCHING ) to perform a current-voltage transformation. This section de- o HOUSING ANTI-REFLECTION output circuit. Therefore, the output voltage V is given by the scribes considerations to be made when selecting this load resis- stray , input and stray in- RESISTOR expression -Rf × Ip. When using such an operational amplifier, it tance. Since for low output current levels, the photomultiplier fluence phase relationships. Therefore, as frequency is in- TACCC0039EB is of course, not possible to increase the output voltage without tube may be assumed to act as virtually an ideal constant-current creased, these circuit elements must be considered as com- Next, let us consider waveform observation of high-speed limit, the actual maximum output being approximately equal to source, the load resistance can be made arbitrarily large, thus pound impedances rather than pure resistances. pulses using an oscilloscope (Figure 37). This type of operation the operational amplifier power supply voltage. At the other end converting a low-level current output to a high-level voltage out- From the above, three guides can be derived for use in se- requires a low load resistance. Since, however, there is a limit to of the scale, for extremely small currents, limitations are placed put. In practice, however, using very large values of load resis- lection of the load resistance: the oscilloscope sensitivity, an amplifier may be required. by the operational amplifier offset current (Ios), the quality of Rf, and other factors such as the insulation materials used. tance creates the problems of deterioration of frequency re- 1) In cases in which frequency response is important, the For cables to which a matching resistor has been connected, sponse and output linearity described below. load resistance should be made as small as possible. there is an advantage that the cable length does not affect the Figure 38: Current-Voltage Transformation Using 2) In cases in which output linearity is important, the load characteristics of the cable. However, since the matching resis- an Operational Amplifier Figure 34: PMT Output Circuit resistance should be chosen such that the output voltage tance is very low compared to the usual load resistance, the out- Rf PHOTOCATHODE is below several volts. put voltage becomes too small. While this situation can be rem- ANODE p lp lp SIGNAL edied with an amplifier of high gain, the inherent noise of such an Vo= -lp ⋅ Rf OUTPUT 3) The load resistance should be less than the approximate - Ip RL CS amplifier can itself be detrimental to measurement performance. input impedance of the external amplifier. PMT + In such cases, the photomultiplier tube can be brought as close OP-AMP V

as possible to the amplifier and a load resistance as large as pos- TACCC0041EA -HV sible should be used (consistent with preservation of frequency HIGH-SPEED OUTPUT CIRCUIT If the operational amplifier has an offset current (Ios), the TACCC0037EB response), to achieve the desired input voltage. For the detection of high-speed and pulsed light signals, a above-described output voltage becomes Vo = -Rf (Ip + Ios), the If, in the circuit of Figure 34, we let the load resistance be RL coaxial cable is used to make the connection between the photo- offset current component being superimposed on the output. Figure 37: With Ringing Suppression Measures Furthermore, the magnitude of temperature drift may create a and the total of the capacitance of the photomultiplier tube anode multiplier tube and the electronic circuit, as shown in Figure 36. PMT problem. In general, a metallic film resistor which has a low tem- to all other electrodes, including such stray capacitance as wiring Since commonly used cables have characteristic impedances of P DYn perature coefficient is used for the resistance Rf, and for high capacitances be Cs, the cutoff frequency fc is expressed by the 50 Ω or 75 Ω, this cable must be terminated in a pure resistance RL resistance values, a vacuum-sealed type is used. Carbon resis- following relationship. equivalent to the characteristic impedance to provide impedance OSCILLOSCOPE tors, with their highly temperature-dependent resistance charac- matching and ensure distortion-free transmission for the signal teristics, are not suitable for this application. When measuring 1 fc = waveform. If a matched transmission line is used, the imped- WIRING SHOULD BE such extremely low level currents as 100 pA and below, in addi- 2πCs ⋅ RL AS SHORT AS POSSIBLE. ance of the cable as seen by the photomultiplier tube output will TACCC0026EA tion to the considerations described above, the materials used in From this relationship, it can be seen that, even if the photo- be the characteristic impedance of the cable, regardless of the It is relatively simple to implement a high-speed amplifier us- the circuit implementation require care as well. For example, ma- terials such as bakelite are not suitable, and more suitable mate- multiplier tube and amplifier have very fast response, response cable length, and no distortion will occur in signal waveforms. ing a wide-band video amplifier or operational amplifier. How- rials are Teflon, polystyrol or steatite. In addition, low-noise will be limited to the cutoff frequency fc of the output circuit. If the If proper matching at the signal receiving end is not achieved, ever, in exchange of design convenience, use of these ICs tends cables should be used, since general-purpose coaxial cables load resistance is made large, at high current levels the voltage the impedance seen at the photomultiplier tube output will be a to create problems related to performance (such as noise). It is exhibit noise due to mechanical changes. In the measurement of drop across RL becomes large, affecting a potential difference function of both frequency and cable length, resulting in signifi- therefore necessary to know their performance limit and take cor- these low level currents, use of an FET input operational ampli- between the last dynode stage and the anode. As a result, a loss cant waveform distortion. Such mismatched conditions can be rective action. fier is recommended. of output linearity (output current linearity with respect to incident caused by the connectors used as well, so that the connector to As the pulse repetition frequency increases, baseline shift light level) may occur. be used should be chosen with regard given to the frequency creates one reason for concern. This occurs because the DC sig- Figure 39: Frequency Compensation of an Operational range to be used, to provide a match to the coaxial cable. nal component has been eliminated from the signal circuit by Amplifier Cf Figure 35: Amplifier Internal Resistance When a mismatch at the signal receiving end occurs, all of coupling with a capacitor which does not pass DC components. If this occurs, the reference zero level observed at the last dynode the pulse energy from the photomultiplier tube is not dissipated Cs stage is not the actual zero level. Instead, the apparent zero level SHIELD CIRCUIT (1) (2) at the receiving end, but is partially reflected back to the photo- PMT P PMT P is the time-average of the positive and negative fluctuations of CC multiplier tube via the cable. While this reflected energy will be DYn SIGNAL DYn SIGNAL Rin Rin the signal waveform. This will vary as a function of the pulse den- Rf OUTPUT OUTPUT fully dissipated at the photomultiplier tube when an impedance RL CS RL CS sity, and is known as baseline shift. Since the height of the pulses match has been achieved at the tube, if this is not the case, be- above this baseline level is influenced by the repetition fre- - cause the photomultiplier tube itself acts as an open circuit, the SIGNAL OUTPUT quency, this phenomenon is of concern when observing wave- + TACCC0017EA energy will be reflected and, thus returned to the signal-receiving forms or discriminating pulse levels. OP-AMP. end. Since part of the pulse makes a round trip in the coaxial TACCC0042EA In Figure 35, let us consider the effect of the internal resis- cable and is again input to the receiving end, this reflected signal tance of the amplifier. If the load resistance is RL and the input is delayed with respect to the main pulse and results in wave- OPERATIONAL AMPLIFIERS In Figure 39, if a capacitance Cf (including any stray capaci- impedance of the amplifier is Rin, the combined parallel output form distortion (so called ringing phenomenon). To prevent this tance) exists in parallel to the resistance Rf, the circuit exhibits a In cases in which a high-sensitivity ammeter is not available, resistance of the photomultiplier tube, Ro, is given by the follow- time constant of (Rf × Cf), so that response speed is limited to phenomenon, in addition to providing impedance matching at the use of an operational amplifier will enable measurements to ing equation. the receiving end, it is necessary to provide a resistance this time constant. This is a particular problem if Rf is large. Stray be made using an inexpensive voltmeter. This technique relies capacitance can be reduced by passing Rf through a hole in a RL ⋅ Rin matched to the cable impedance at the photomultiplier tube end Ro = on converting the output current of the photomultiplier tube to a shield plate. When using coaxial signal input cables, since the + as well. If this is done, it is possible to virtually eliminate the ring- RL Rin voltage signal. The basic circuit is as shown in Figure 38, for cable capacitance Cc and Rf are in the feedback loop, oscilla- ing caused by an impedance mismatch, although the output which the output voltage, Vo, is given by the following relation- tions may occur and noise may be amplified. While the method This value of Ro, which is less than the value of RL, is then the pulse height of the photomultiplier tube is reduced to one-half of ship. of avoiding this is to connect Cf in parallel to Rf, to reduce gain at effective load resistance of the photomultiplier tube. If, for ex- the normal level by use of this impedance matching resistor. high frequencies, as described above, this creates a time con- Vo = -Rf ⋅ Ip ample, RL=Rin, the effective load resistance is 1/2 that of RL stant of Rf × Cf which limits the response speed. 16 17 Selection Guide by Application

Applications Required Major Characteristics Applicable PMT Applications Required Major Characteristics Applicable PMT

Spectroscopy Mass and Solid Surface Analysis

Equipment Utilizing Absorption Solid Surface Analysis UV/Visible/IR Spectrophotometer The composition and structure of a solid surface can be studied by irradiating a narrow beam of electrons, ions, light When light passes through a substance, the light energy or X-rays onto the surface and measuring the secondary 1) High environmental resistance causes changes in the electron energy of the substance, electrons, ions or X-rays that are produced. With the 2) High stability R474, R515, R596, R595 resulting in partial energy loss. This is called absorption progress of the semiconductor industry, this kind of technol- 3) High current amplification R2362, R5150-10 and gives analytical data. In order to determine the amount R6356, R6357 ogy becomes essential in evaluating semiconductors, in- 4) Low dark current of the sample substance, it is irradiated while the light R928, R955, R1477, R3896 1) Wide spectral response cluding defects, surface analysis, adhesion, and density wavelength is scanned continuously. The spectral intensi- R1463 2) High stability profile. Electrons, ions, and X-rays are measured with elec- ties of the light before and after passing through the sample R374, R376 3) Low dark current tron multipliers and MCPs. are detected by a photomultiplier tube to measure the 4) High quantum efficiency amount of absorption. 5) Low hysteresis 6) Good polarization characteristic Atomic Absorption Spectrophotometer Environment Monitoring This is widely used in the analysis of minute quantities of Dust Counter metallic elements. For each element to be analyzed, a spe- A dust counter measures the density of dust or particles 1) Low dark noise R6350 cial elementary hollow cathode lamp is used to irradiate a R928 floating in the atmosphere or inside rooms. It makes use of 2) Low spike noise R105, R3788 sample which is burned for atomization. A photomultiplier R955 light or absorption of beta-rays by particles. 3) High quantum efficiency R647-01 tube detects the light passing through the sample to mea- sure the amount of absorption, which is compared with a reference sample measured in advance. Turbidimeter When floating particles are contained in a liquid, light inci- 1) Low dark current R6350 dent on the liquid is absorbed, scattered or refracted by 2) Low spike noise R105 Equipment Utilizing Emission these particles. It looks cloudy or hazy to the human eye. A 3) High quantum efficiency R1924 turbidimeter is a device that numerically measures the tur- Photoelectric Emission Spectrophotometer bidity by using light transmission and scattering. When an external energy is applied to a sample, light emis- sion occurs from the sample. By dispersing this emission R6350, R6351, R6352 Others 1) High quantum efficiency at wavelength NOx= R928 using a monochromator, into characteristic spectral lines of R6354, R6355, R6356, R7311 • NOx meters, SOx meters of interest R374, R2228, R5959 elements and measuring their presence and intensity si- 1P28, R106, R212, R4220 2) Low dark current R5070 multaneously with photomultiplier tubes, this equipment R759, 3) Good temperature characteristic SOx= R6095, R3788, R1527 enables rapid qualitative and quantitative analysis of the 4) High stability R2693 elements contained in the sample. 1) High sensitivity 2) Low dark current Fluorescence Spectrophotometer Biotechnology The fluorescence spectrophotometer is used in biological 3) High stability science, particularly in molecular biology. When an excita- Cell Sorter R6353, R6358 tion light is applied, some substances emit light with a The cell sorter is an instrument that selects and collects R3788, R4220, R1527 wavelength longer than that of the excitation light. This light only specific cells using a fluorescent substance for label- R928 is known as fluorescence. The intensity and spectral char- ing. The labeled cells are irradiated by laser beam, and a acteristics of the fluorescence are measured by a photo- photomultiplier tube is used to detect the resulting fluores- 1) High quantum efficiency multiplier tube, and the substance is analyzed qualitatively cence or scattering. 2) High stability R6353, R6357, R6358 and quantitatively. 3) Low dark current R928, R1477, R3788, R3896 Fluorometer 4) High current amplification R2368 Raman Spectrophotometer While the ultimate purpose of the cell sorter is to separate 5) Good polarization characteristic When monochromatic light strikes a substance and scat- cells, the fluorometer is used to analyze cells and chemical ters, Raman scattering also occurs at a different wave- substances by measuring the fluorescence or scattered R2949 length from the excitation light. Since the wavelength differ- 1) High quantum efficiency light from a cell or chromosome with regard to such factors R1463P, R649 ence is a characteristic of the molecules, the spectral mea- 2) Low dark current as fluorescence spectrum, fluorescence quantum effi- R943-02 surement of Raman scattering provides qualitative and 3) Single photon discrimination ability ciency, fluorescence anisotropy (polarization) and fluores- quantitative data of the molecules. Raman scattering is ex- cence lifetime. tremely weak and a sophisticated optical system is used for measurement, thus the photomultiplier tube is operated in the photon counting mode.

Others R3788 • Liquid or Gas Chromatography R647-01, R1166, R6095, R580 • X-Ray Diffractometer, X-Ray Fluorescence Analyzer R647 • Electron Microscope

18 19 Applications Required Major Characteristics Applicable PMT Applications Required Major Characteristics Applicable PMT

Medical Applications Radiation Measurement Gamma Camera Area Monitor R6231-01 R1306, R6231 The area monitor is designed to continuously measure a 1) Long term stability The gamma camera takes an image of a radioisotope-la- 1) High energy resolution R6234-01 R329-02, R4607-01 change in environmental radiation levels. It uses a 2) Low background noise beled reagent injected into the body of a patient to locate 2) Good uniformity R6235-01 R1307, R6233 photomutiplier tube coupled to a scintillator, to monitor low- 3) Good plateau characteristic abnormalities. This equipment starts from a scintillation 3) High stability R6236-01 R877, R877-01 scanner and has been gradually improved. Its detection 4) Uniform current amplification R1307-01 level alpha ray or gamma ray. section uses a large diameter NaI(Tl) scintillator and light- R6233-01 guide coupled to an array of photomultiplier tubes. R6237-01 Survey Meter 1) Long term stability R1635 The survey meter measures low-level gamma ray or beta 2) Low background noise R647 Positron CT ray using a photomultipliter tube coupled to a scintillator. 3) Good plateau characteristic R1924 R1635, R5900U-00-C8 R6095 The positron CT provides tomographic images by detecting 1) High energy resolution R1450 coincident gamma-ray emission accompanying annihila- 2) High stability R5800 tion of a positron emitted from a tracer radioisotope (11C, 3) High speed response R1548 Resource Inquiry 15O, 13N, 18F, etc.) injected into the body. Photomultiplier 4) Compact size R6427 tubes coupled to scintillators are used to detect these Oil Well Logging gamma-rays. Oil well logging is used to locate an oil deposit and deter- mine its size. A probe containing a radiation source and a 1) Stable operation at high temperature up R4177-01, R1281 Liquid scintillator/photomultiplier tube is lowered into an oil well as to 175 °C R3991 Liquid scintillation counters are used for tracer analysis in 1) High quantum efficiency it is being drilled. The scattered radiation or natural radia- 2) Rugged structure R1288, R1288-01 age measurement and biochemical research. A sample 2) Low noise of thermionic emission tion from the geological formation are detected and ana- 3) Good plateau characteristic 3) Less glass scintillation at the faceplate containing radioisotopes is dissolved in a solution contain- R331, R331-05 lyzed, to determine the type and density of the rock that ing an organic scintillator, and it is placed in the center be- and bulb surrounds the well. tween a pair of photomultiplier tubes. These tubes simulta- 4) Fast response time neously detect the emission of the organic scintillator. 5) High pulse linearity Industrial Measurement

In-Vitro Assay • Radioimmunoassay Thickness Meter R647 In-vitro assay is used for (RIA) Using a radiation source and a scintillator/photomultiplier physical checkups, diagnosis, R1166, R5611-01 tube, a product thickness can be measured on factory pro- Uses radioactive R647-01, R5800 and evaluation of drug po- R1924 duction lines for paper, plastic, steel sheet, etc. Beta-rays isotopes for labeling. 1) Wide R6095 tency by making use of speci- are used as a radiation source in measurement of products 2) High energy resolution R580 ficity of the antigen/antibody • Enzymeimmunoassay with a small density, such as rubber, plastic, and paper. R1306, R6231 reaction characteristics of tiny (EIA) Gamma-rays are used for products with a large density, like R329-02 amounts of insulin, hor- Uses enzymes for steel sheet. (X-ray fluorescence spectrometers are used in 1) High quantum efficiency mones, drugs and viruses labeling and measures measurement of film thickness for plating, evaporation, 2) High stability which are contained in blood resulting chemilumines- R6350, R6352, R6353 etc.) 3) Low dark current or urine. Photomultiplier cence or biolumines- R6356, R6357 Semiconductor Inspection System R4220, R928, R3788 tubes are used to measure cence. This is widely used for semiconductor wafer inspection and 1) High quantum efficiency at wavelength R647, R1463 optically the amount of anti- • Fluoroimmunoassay/ pattern recognition such as semiconductor mask align- of interest R928, R1477, R3896 R1925 gens labeled by radioiso- chemiluminescent ment. For wafer inspection, the wafer is scanned by a laser 2) Good uniformity R647, R1463 R6095, R374 topes, enzymes, fluorescent imunoassay beam, and scattered light caused by dirt or defects is de- 3) Low spike noise chemiluminescent or biolumi- Uses fluorescent or tected by a photomultiplier tube. nescent substances. chemiluminescent substances for labeling. Photography and Printing Color Scanner 1) High quantum efficiency at wavelengthes Others To prepare color pictures and photographs for printing, the of RGB R3788 • X-ray phototimer color scanner is used to separate the original colors into the 2) Low dark noise R3810, R3811 In X-ray examination, this equipment automatically controls three primary colors (RGB) and black. It uses photomulti- 3) Fast fall time the exposure to an X-ray film. The X-ray transmitting R647, R1463 1) High sensitivity plier tubes combined with RGB filters, and provides color 4) High stability through a subject is converted into visible light by a phos- R6350 R1924, R1925 2) Low dark current separation as image data. 5) Good repeatability with change in input phor screen. A photomultiplier tube is used to detect this 931A, R105 3) High stability signal light and provide an electrical signal. When the accumu- lated electrical signal reaches a preset level, X-ray irradia- tion is shut off, making it possible to obtain an optimum film density.

20 21 Applications Required Major Characteristics Applicable PMT Applications Required Major Characteristics Applicable PMT

High Energy Physics Aerospace

Collision Experiment Measurement of X-rays from Outer Space X-rays from outer space include information on the enigmas Hodoscope of space. As an example, the X-ray observation satellite Photomuliplier tuubes are coupled to the ends of long, thin R1635 (H3164-10) "Asuka", developed by a group of the ISAS (Institute of 1) High energy resolution R2486 plastic scintillators arranged orthogonally in two layers. R647-01 (H3165-10) Space and Astronomical Science - Japan), uses a gas-scin- 2) Rugged structure They measure the time and position at which charged par- R1450 (H6524) tillation proportional counter coupled to a position-sensitive ticles pass through the scintillators. R1166 (H6520) photomultiplier tube, to measure X-rays from supernovas, 1) Fast time response etc. TOF Counter 2) Compact size R5800 TOF counters consisting of plastic scintillators and photo- 3) Immunity to magnetic fields R1635 (H3164-10) Measurement of Scattered Light from Fixed Stars multiplier tubes are arranged along paths of secondary par- R1450 (H6524) and Interstellar Dust ticles which are generated by collision reactions. Velosities R4998 (H6533), R5505 (H6152-01) Ultraviolet rays from space contain a lot of information about 1) Rugged structure of these particles are measured by time differences be- R1828-01 (H1949-51), R2083 (H2431-50) the surface temperature of the stars and interstellar sub- 2) Sensitivity in VUV to UV range (solar R1080, R976 tween collision time and detection times. R5924 (H6614-01) stances. However, these ultraviolet rays are absorbed by blind response: see page 4 for Cs-Te, R6834, R6835, R6836 the earth's atmosphere, so it is impossible to measure them Cs-I photocathodes) Cherenkov Counter from the earth surface. Photomultiplier tubes are mounted A Cherenkov counter identifies secondary particles which 1) High Quantum efficiency R2256-02 (H6521) in rockets or artificial satellites, to measure ultraviolet rays generated by collision reactions. Cherenkov emitted 2) Good single photon defectivity R5113-02 (H6522) with wavelengthes shorter than 300 nm. from a charged particle which has energy more than a con- 3) High current amplification R2059 (H3177-51) stant level and goes through a radiator like gas or 4) Fast time response R1584 (H6528) aerogel are detected. A velocity of a charged particle is 5) Immunity to magnetic fields R5924 (R6614-01) Lasers mesured by an angle of its cherenkov lights. Laser Radar Calorimeter 1) High pulse linearity R580 (H3178-51) The laser radar is used in such applications as atmospheric R3809U Series, R5916U Series The calorimeter measures the accurate direction and en- 2) High energy resolution R329-02 (H6410) measurement which uses a highly-accurate range finding or R3234-01, R3237-01 ergy of secondary particles emitted from the collision reac- 3) High stability R5924 (H6614-01) aerosol scattering. 1) Fast response time tion of electrons and positrons. 4) Immunity to magnetic fields R6091 (H6559) Fluorescence Lifetime Measurement 2) Low dark count 3) High current amplification The laser is used as an excitation light for fluorescence life- and Proton Decay Experiment, Cosmic Ray Detection time measurement. The molecular structure of a substance R3809U Series, R5916U Series can be studied by measuring temporal intensity changes in Neutrino Experiment the emitted fluorescence. A research of solar or particle astrophysics is performed in a neutrino experiment. Its observation system consists of a large size radiator sur- Plasma rounded by a number of large-diameter photomultiplier tubes. Cherenkov light which occurs from interactions of Plasma Measurement neutrinos or other particles and a radiator are detected. Photomultiplier tubes are being used in the electron density The directions and energies of the particles are measured. and electron temperature measurement system for plasma R5912 in the Tokamak-type nuclear fusion test reactor in Japan. 1) High detectivity at low light level R636-10 R3600-02 (R3600-06) Photomultiplier tubes and MCPs are also used in similar 2) High quantum efficiency R943-02 Neutrino and Proton Decay Experiment measurements for plasma using Thompson scattering and 3) Gate operation In the neutrino and proton decay experiment which is per- the Doppler effect, in observation of spatial distribution of 1) Large photocathode area formed at KAMIOKA in Japan, 11200 of 20 " dimeter photo- plasma, and in measurements of impurities in plasma for 2) Fast Time Response multiplier tubes are set covering all directions of a huge the purpose of impurity and ion control. tank storing around 50000 t of pure water. Cherenkov light 3) High stability 4) Low dark count emitted by solar neutrino or proton decay are measured.

Air Shower Counter When cosmic rays collide with the earth's atmosphere, sec- ondary particles are created by the interaction of the cosmic R1166 (H6520) rays and atmospheric atoms. These secondary particles R580 (H3178-51) generate more secondary particles, which continue to in- R329-02 (H6410) crease in a geometrical progression. This is called an air R1828-01 (H1949-51) shower. The gamma rays and Cherenkov light emitted in R6091 (H6559) this air shower is detected by photomultiplier tubes lined up R1250 (H6527) in a lattice array on the ground.

The assembly type is given in parentheses.

22 23 Side On Type Photomultiplier Tubes (at 25 °C)

A Spectral Response CDEF G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity LMAnode Characteristics A Dynode Anode to B Socket J Luminous Blue KAnode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window line Sensitivity Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code Material No. Min. Typ. Index Transit Type No. length Material No. of Socket Voltage Current Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. µ µ Typ. Typ. (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (mA/W) (Vdc) (A/lm) (A/lm) (A/W) (nA) (nA) (ns) (ns) 13 mm (1/2 ") Dia. Types For UV to visible range, general 350U ★ z !0 × 5 × 6 Photon counting type: R6350P R6350 purpose (S-5) 185 to 650 340 Sb-Cs U q CC/9 E678-11U/ 1250 0.01 20 40 5.0 – 48 1000 50 300 3.6 10 7.5 10 0.5 5 1.4 15 : 10 s-1(cps) Typ. R6350

R6351 Fused silica window type of R6350 350S 160 to 650 340 Sb-Cs Q w CC/9 E678-11U★/z 1250 0.01 20 40 5.0 – 48 1000 !0 50 300 3.6 × 105 7.5 × 106 0.5 5 1.4 15 R6351

R6352 High sensitivity variant of R6350 452U 185 to 750 420 BA U q CC/9 E678-11U★/z 1250 0.01 80 120 10.0 – 90 1000 !0 100 700 5.2 × 105 5.8 × 106 1 10 1.4 15 R6352

Low dark current bialkali photo- ★ z × 5 × 6 Photon counting type: R6353P R6353 cathode 456U 185 to 680 400 LBA U q CC/9 E678-11U/ 1250 0.01 30 70 6.5 – 65 1000 !0 100 400 3.7 10 5.7 10 0.1 2 1.4 15 : 10 s-1(cps)Typ. R6353 For UV to near IR range, general ★ z × 5 × 6 R6355 purpose 550U 185 to 850 530 MA U q CC/9 E678-11U/ 1250 0.01 80 150 6.0 0.15 45 1000 !0 100 600 1.8 10 4.0 10 1 10 1.4 15 R6355

R6356 High sensitivity variant of R6355 560U 185 to 900 600 MA U q CC/9 E678-11U★/z 1250 0.01 140 250 7.0 0.3 60 1000 !0 400 2500 6.0 × 105 1.0 × 107 1 10 1.4 15 R6356

High sensitivity variant of R6356, ★ z × 5 × 6 R6357 Meshless type – 185 to 900 450 MA U e CC/9 E678-11U/ 1250 0.01 350 500 13.0 0.4 105 1000 !0 1000 2000 4.2 10 4.0 10 2 10 1.4 15 R6357 Low dark current multialkali photo- Photon counting type: R6358P ★ z × 5 × 6 R6358 cathode 561U 185 to 830 530 MA U q CC/9 E678-11U/ 1250 0.01 140 200 7.5 0.15 70 1000 !0 300 700 2.5 10 3.5 10 0.1 1 1.4 15 : 20 s-1(cps) Typ. R6358 13 mm (1/2 ") Dia. Subminiature Types

350U ★ Photon counting type: R3810P For UV to visible range, general z × 5 × 6 R3810 purpose (S-5) 185 to 650 340 Sb-Cs U r CC/9 E678-11U/ 1250 0.01 20 40 5.0 – 48 1000 !0 50 300 3.6 10 7.5 10 0.5 5 1.4 15 : 5 s-1(cps) Typ. R3810

Multialkali photocathode variant of ★ z 4 × 6 R3811 R3810 550U 185 to 850 530 MA U r CC/9 E678-11U/ 1250 0.01 50 150 6.0 0.15 45 1000 !0 50 200 5.9 × 10 1.3 10 1 10 1.4 15 R3811

(Unit: mm)

q R6350, R6352, R6353 etc. w R6351 e R6357 r R3810, R3811

± 13.5 0.8 13.5 ± 0.8 13.5 ± 0.8 ± 4 MIN. 4 MIN. 4 MIN. 13.5 0.8 0.5 PHOTO- PHOTO- PHOTO- PHOTOCATHODE ± CATHODE CATHODE CATHODE 9.7 4 MIN. 2 2 2 ± ± ± 3 3 7 17 MAX. 2 2 2 ± 25 MAX. ± ± 13 MIN. 13 MIN. 13 MIN. 1.5 40 1.5 1.5 42 40 ± ± ± 50 MAX.

52 MAX. 3 MIN. 50 MAX. 24.0 24.0 24.0 11 PIN BASE

UV WINDOW QUARTZ WINDOW UV WINDOW

DY6 DY6 DY6 DY6 DY5 DY7 DY5 7 DY7 7 6 8 DY5 7 DY7 DY5 7 DY7 6 8 6 8 6 8 DY4 DY8 DY4 5 9 DY8 DY4 5 9 DY4 5 9 DY8 5 9 DY8 DY3 4 10 DY9 DY3 4 10 DY9 DY3 4 10 DY9 DY3 4 10 DY9 3 11 3 11 P 3 11 3 11 DY2 P DY2 P P 2 DY2 DY2 2 1 2 2 1 DY1 K 1 1 DY1 K DY1 K DY1 K DIRECTION OF LIGHT DIRECTION OF LIGHT DIRECTION OF LIGHT DIRECTION OF LIGHT

TPMSA0034EB TPMSA0034EA TPMSA0034EB TPMSA0013EA 24 25 Side On Type Photomultiplier Tubes (at 25 °C)

A Spectral Response CD EF G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode B Socket J Luminous Blue K Anode to Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window line Sensitivity Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code Material No. Min. Typ. Index Transit Type No. length Material No. of Socket Voltage Current Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. µ µ Typ. (A/lm) (A/lm) (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 28 mm (1-1/8 ") Dia. Types with UV to Visible Sensitivity

350K ■ 5 7 931A For visible range, general purpose (S-4) 300 to 650 400 Sb-Cs K q CC/9 E678-11A/xc 1250 0.1 25 40 5.0 – 48 1000 !0 50 400 4.8 × 10 1.0 × 10 5 50 2.2 22 931A

931B Bialkali photocathode, high stability 453K 300 to 650 400 BA K q CC/9 E678-11A■/xc 1250 0.1 30 60 7.1 – 60 1000 !0 50 600 6.6 × 105 1.0 × 107 5 50 2.2 22 UV glass window type: R1516 931B

Low dark current variant of R105 q E678-11A■ xc !0 × 5 × 6 1P21 350K Sb-Cs K CC/9 / 1250 0.1 25 40 5.0 – 48 1000 50 250 3.0 10 6.25 10 1 5 2.2 22 1P21 300 to 650 400 High gain and low dark current vari- (S-4) E678-11A■ 5 7 R105 ant of 931A Sb-Cs K q CC/9 /xc 1250 0.1 25 40 5.0 – 48 1000 !0 50 400 4.8 × 10 1.0 × 10 1 10 2.2 22 High gain type: R105UH R105 For UV to visible range, general q E678-11A■ xc !0 × 5 × 7 1P28 purpose 350U Sb-Cs U CC/9 / 1250 0.1 25 40 5.0 – 48 1000 20 400 4.8 10 1.0 10 5 50 2.2 22 1P28 185 to 650 340 High gain and low dark current vari- (S-5) E678-11A■ 5 6 R212 ant of 1P28 Sb-Cs U q CC/9 /xc 1250 0.1 25 40 5.0 – 48 1000 !0 50 300 3.6 × 10 7.5 × 10 1 10 2.2 22 Fused silica window type:R106 R212 Low dark current bialkali photocath- Photon counting type: R1527P 185 to 680 E678-11A■ 5 6 R1527 ode 456U 400 LBA U q CC/9 /xc 1250 0.1 40 60 6.4 – 60 1000 !0 200 400 4.0 × 10 6.7 × 10 0.1 2 2.2 22 : 10 s-1(cps) Typ. R1527

R4220 High sensitivity variant of R1527 456U 185 to 710 410 LBA U q CC/9 E678-11A■/xc 1250 0.1 80 100 8.0 – 70 1000 !0 1000 1200 8.4 × 105 1.2 × 107 0.2 2 2.2 22 Fused silica window type:R7447 R4220

■ Synthetic silica window type High sensitivity variant of R212 185 to 750 E678-11A xc × 5 × 7 R3788 452U 420 BA U q CC/9 / 1250 0.1 100 120 10.0 0.01 90 1000 !0 500 1200 9.0 10 1.0 10 5 50 2.2 22 : R4332 R3788 Transmission-mode bialkali photo- 185 to 650 E678-11A■/xc × 5 × 6 Photon counting type:R2693P R2693 cathode 430U 375 LBA U w CC/9 1250 0.1 30 50 7.0 – 62 1000 !0 100 300 3.7 10 6.0 10 0.5 5 1.2 18 :15 s-1(cps) Type. R2693

Low dark current bialkali photocath- 160 to 680 ■ Photon counting type: R7446P * E678-11A xc 5 6 * R7446 ode – 400 LBA Q q CC/9 / 1250 0.1 40 60 6.4 – 60 1000 !0 200 400 4.0 × 10 6.7 × 10 0.1 2 2.2 22 : 10 s-1(cps) Typ. R7446

Unit: mm q 931A, 931B, 1P28, R3788, etc. w R2693

28.5 ± 1.5 8 MIN. 29.0 ± 1.7 18 MIN. PHOTOCATHODE

DY6 PHOTOCATHODE DY5 6 DY7 5 7 DY6 DY4 4 8 DY8 DY5 6 DY7 5 7 DY3 3 9 DY9 DY4 DY8 24 MIN. 4 8 2 10 16 MIN.

80 MAX. DY2 P DY3 3 9 DY9 94 MAX. 1 11 2.5

± DY1 K 76 MAX. 2 10 DY2 P 2.5

± 1 11 90 MAX. 49.0 DIRECTION OF LIGHT DY1 K 49.0 DIRECTION OF LIGHT

32.2 ± 0.5 34 MAX. HA COATING 11 PIN BASE JEDEC No. B11-88 11 PIN BASE JEDEC No. B11-88

TPMSA0001EA TPMSA0007EA 26 27 Side On Type Photomultiplier Tubes (at 25 °C)

A Spectral Response C D E F G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode B Socket J Luminous Blue K Anode to Anode Sensitivity Anode Dark Time Response Peak Photo- Out-Structure Anode to Average Red / Radiant Cathode Current Curve Window line Sensitivity Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code Material No. Min. Typ. Index Transit Type No. length Material No. of Socket Voltage Current Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. µ µ Typ. (A/lm) (A/lm) (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 28 mm (1-1/8 ") Dia. Types with UV to Near IR Sensitivity Transmission-mode multialkali ■ xc × 4 × 6 R2368 photocathode 500U 185 to 850 420 MA U q CC/9 E678-11A/ 1250 0.1 80 150 – 0.15 64 1000 !0 50 200 8.3 10 1.3 10 5 50 1.2 18 R2368 For UV to near IR range, high sen- E678-11A ■ xc × 5 × 7 R928 sitivity 562U 185 to 900 400 MA U e CC/9 / 1250 0.1 140 250 8.0 0.3 74 1000 !0 400 2500 7.4 10 1.0 10 3 50 2.2 22 Fused silica window type: R955 R928 For UV to near IR range, low dark 185 to 900 E678-11A ■ xc × 5 × 7 h h R2949 count 552U 400 MA U y CC/9 / 1250 0.1 140 200 7.5 0.3 68 1000 !0 1000 2000 6.8 10 1.0 10 300 500 2.2 22 R2949

R1477-06 High sensitivity variant of R928 554U 185 to 900 450 MA U u CC/9 E678-11A ■/xc 1250 0.1 350 375 10.0 0.35 80 1000 !0 1000 2000 4.2 × 105 5.3 × 106 3 50 2.2 22 R1477-06

185 to 900 E678-11A ■ R3896 High sensitivity variant of R1477-06 555U 450 MA U u CC/9 /xc 1250 0.1 475 525 15.0 0.4 90 1000 !0 3000 5000 8.6 × 105 9.5 × 106 10 50 2.2 22 R3896

High sensitivity in 400 nm to 700 185 to 850 ■ E678-11A xc × 5 × 6 h h R4632 nm range, low dark count 556U 430 MA U e CC/9 / 1250 0.1 140 200 7.5 0.15 80 1000 !0 300 700 2.8 10 3.5 10 50 100 2.2 22 R4632 GaAs photocathode, high quantum 185 to 930 300 r E678-11A ■/xc !0 × 4 × 5 f f Fused silica window type R636-10 efficiency 650U to 800 GaAs(Cs) U CC/9 1500 0.001 400 550 9.0 0.53 62 1250 100 250 2.8 10 4.5 10 0.1 2 2.0 20 : R758-10 R636-10 InGaAs photocathode, for UV to InGaAs 1 400 E678-11A ■/xc × 2 × 5 R2658 1010 nm range 850U 185 to 1010 (Cs) U t CC/9 1500 0.001 50 100 4.5 0.4 (at 1µ m) 1250 !0 5 16 1.6 10 1.6 10 1 10 2.0 20 Photon counting type: R2658P R2658 700K For near IR range 400 to 1200 Ag-O-Cs E678-11A ■ xc × 3 × 5 e e R5108 (S-1) 800 K w CC/9 / 1500 0.1 10 25 – – 2.2 1250 !0 3.5 7.5 6.6 10 3.0 10 350 1000 1.2 18 R5108

(Unit: mm) q R2368 w R5108 t R2658 y R2949

29.0 ± 1.7 29.0 ± 1.7 28.5 ± 1.5 29.0 ± 1.7 T9 18 MIN. 18 MIN. BULB 3 MIN. 8 MIN.

PHOTOCATHODE PHOTOCATHODE PHOTOCATHODE PHOTOCATHODE DY6 DY6 DY6 DY6 DY5 6 DY7 DY5 6 DY7 DY5 6 DY7 5 7 DY5 6 DY7 5 7 5 7 5 7 DY4 DY8 DY4 DY8 DY4 4 8 4 8 7 MIN. 4 DY8 DY4 4 8 DY8 8 16 MIN. DY3 3 9 DY9 16 MIN. DY3 3 9 DY9 DY3 3 9 DY9 DY3 3 9 DY9 2 10 2 10 2 10 76 MAX. 80 MAX. P 76 MAX. 2 P DY2 10 80 MAX. P 2.5 DY2 6 MIN. DY2 2.5 P 1

± DY2 ±

1 11 2.5 1

12 MIN. 11

± 1 11 90 MAX. 90 MAX.

1 11 ± DY1 K DY1 K 94 MAX. DY1 K DY1 K 94 MAX. 49.0 49.0 49.0

DIRECTION OF LIGHT 49.0 DIRECTION OF LIGHT DIRECTION OF LIGHT DIRECTION OF LIGHT

32.2 ± 0.5 34 MAX. ± ± HA COATING HA COATING 32.2 0.5 32.2 0.5 INSULATION COVER 11 PIN BASE 11 PIN BASE JEDEC No. B11-88 JEDEC No. B11-88 11 PIN BASE 11 PIN BASE JEDEC No. B11-88 JEDEC No. B11-88

TPMSA0026EA TPMSA0023EA TPMSA0012EC TPMSA0016EA

e R928, R4632 r R636-10 u R1477-06, R3896

29.0 ± 1.7 28.5 ± 1.5 8 MIN. 28.5 ± 1.5 T9 T9 BULB 8 MIN. 3 MIN. BULB 8 MIN.

PHOTOCATHODE PHOTOCATHODE PHOTOCATHODE DY6 DY6 DY5 6 DY7 DY5 6 DY7 5 7 D DY6 5 7 DY4 DY8 DY5 6 DY7 DY4 DY8 4 8 DY4 5 7 4 8 DY4 DY8 DY3 3 9 DY9 4 8 DY3 3 9 DY9 24 MIN. 24 MIN. DY3 16 MIN. 12 MIN. 2 10 DY3 3 9 DY9 2 10 80 MAX. 80 MAX. DY2 P DY2 P 80 MAX. DY2 2.5 2.5 1 11 2 1 11 ± ± 10 2.5 94 MAX. 94 MAX. K DY2 P K DY1 ± DY1 94 MAX. 1 11 49.0 49.0 DIRECTION OF LIGHT DY1 K DIRECTION OF LIGHT 49.0 D DIRECTION OF LIGHT

32.2 ± 0.5 32.2 ± 0.5 34 MAX. HA COATING 11 PIN BASE 11 PIN BASE JEDEC No. B11-88 11 PIN BASE JEDEC No. B11-88 JEDEC No. B11-88

TPMSA0008EA TPMSA0027EC TPMSA0008EA 28 29 Side-On and Dormer Window Type Photomultiplier Tubes (at 25 °C)

A Spectral Response C D E F G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode B Socket J Luminous Blue K Anode to Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window line Sensitivity Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code Material No. Min. Typ. Index Transit Type No. length Material No. of Socket Voltage Current Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. µ µ Typ. (A/lm) (A/lm) (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 13 mm (1/2 ") Dia. Compact Types with Solar Blind Response

★ R7511 For VUV range, MgF2 window 150M 115 to 195 130 Cs-I MF w CC/9 E678-11U 1250 0.01 – – – – 26a 1000 !0 – – 5.2 × 104a 2.0 × 106 0.3 3 1.4 15 R7511

R6354 For UV range 250S 160 to 320 230 Cs-Te Q q CC/9 E678-11U★/z 1250 0.01 – – – – 62b 1000 !0 – – 1.8 × 105b 3.0 × 106 0.5 5 1.4 15 R6354

★ R7311 For UV range, MgF2 window 250M 115 to 320 200 Cs-Te MF w CC/9 E678-11U 1250 0.01 – – – – 40b 1000 !0 – – 2.8 × 105b 7.0 × 106 0.3 3 1.4 15 R7311 28 m (1-1/8 ") Dia. Types with Solar Blind Response

■ a 4a 6 Sharp-cut UV type 2 window e × × R1259 For VUV range, MgF 150M 115 to 195 120 Cs-I MF CC/9 E678-11A 1250 0.1 – – – – 26 1000 !0 – – 3.1 10 1.2 10 1 10 2.2 22 : R2032 R1259

* R7154 For UV range 250S 160 to 320 230 Cs-Te Q r CC/9 E678-11A■/xc 1250 0.1 – – – – 62b 1000 !0 – – 6.2 × 105b 1.0 × 107 1 10 2.2 22 R7154*

■ R1220 For UV range, MgF2 window 250M 115 to 320 200 Cs-Te MF e CC/9 E678-11A 1250 0.1 – – – – 40b 1000 !0 – – 4.0 × 105b 1.0 × 107 1 10 2.2 22 R1220 38 mm (1-1/2 ") Dia. Dormer Window Types

Multialkali photocathode, tempo- t ■ !6 × 3 × 4 R1923 rary base 558K 300 to 800 530 MA K CC/10 E678-12A 2000 0.1 200 300 8.0 0.12 89 1250 5 15 4.4 10 5.0 10 1102.2 22 R1923

(Unit: mm)

q R6354 w R7511, R7311 t R1923

13.5 ± 0.8 PHOTO CATHODE

4 MIN. 0.6 PHOTO- ± CATHODE 16.8

2.5 A 9.0 ± 0.5 Temporary Base Removed DY10 DY8 2

± 8 FACEPLATE P 9 DY6

7 DIRECTION OF LIGHT 14.0 ± 0.4 6 10 2

± 38.5 ± 1.1 DY9 5 11 DY4 13 MIN. DY6 4 MIN 1.5 42 DY6 17.2 MIN. 12 ± DY5 7 DY7 DY7 4 DY2 52 MAX. 6 8 DY5 7 DY7 6 8 16.5 MIN. 3 13 DY4 5 9 DY8 DY5 K 24.0 MgF2 WINDOW DY4 DY8 5 MIN 5

9 15.2 MIN.

12.7 MIN. 2 DY3 4 10 DY9 DY3 1 DY3 4 10 DY9 DY1 3 PHOTOCATHODE 11 P

DY2 45 MAX 1.5 3 11

QUARTZ WINDOW 2 ± DY2 P 1 2 DY1 K 53 MAX 1 K B Bottom View DY1 PHOTO- 24.0 P DY10 CATHODE ± 1 DIRECTION OF LIGHT 36.5 0.25 ± DIRECTION OF LIGHT DY9 67 DY8 18.8 ± 0.25 66 5 8

11 PIN BASE 76.4 MAX. DY7 4 9DY6

TPMSA0034EA TPMSA0038EB DY5 3 10 DY4 2 11 DY3 1 12 DY2 DY1 K

e R1259, R1220 r R7154 6.3 MIN.

28.5 ± 1.5 45.7 MIN.

8 MIN. 12 PIN BASE JEDEC No. B12-43

20 MAX. PHOTOCATHODE 20 MAX. DY6 FACE PLATE DY5 DY7 6 TPMSA0022EB 5 7 ± 28.5 1.5 DY4 4 8 DY8 8 MIN. 24 MIN. DY3 3 9 DY9

MgF2 WINDOW 80 MAX.

94 MAX. 2 10 2.5 DY2 ± P 1 11 DY1 K

DY6 49.0 DY5 6 DY7 5 7 DIRECTION OF LIGHT DY4 4 8 DY8

14 MIN. DY3 3 9 DY9

80 MAX. 2 10 DY2 P

PHOTO- 2.5 ± 94 MAX. 1 32.2 0.5

± 11 CATHODE DY1 K 49.0 DIRECTION OF LIGHT 11 PIN BASE JEDEC No. B11-88

32.2 ± 0.5 TPMSA0021EA

11 PIN BASE TPMSA0020EA JEDEC No. B11-88 30 31 Head On Type Photomultiplier Tubes (at 25 °C) A Spectral Response C D E F G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode B Socket J Luminous Blue K Anode to Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window line Sensitivity Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code Material No. Min. Typ. Index Transit Type No. length Material No. of Socket Voltage Current Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. µ µ Typ. (A/lm) (A/lm) (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 10 mm (3/8 ") Dia. Types 1.2 × 103 b Subminiature size, for UV range q ★ b 1 × 3b × 5 R1893 200S 160 to 320 240 Cs-Te Q L/8 E678-11N/v 1500 0.01 – – – – 24 1250 (A/W) – 3.6 10 1.5 10 0.5 2.5 0.8 7.8 R1893

For visible range and scintillation ★ Photon counting type: R1635P R1635 counting 400K 300 to 650 420 BA K q L/8 E678-11N /v 1500 0.03 60 95 9.5 – 76 1250 1 30 100 8.0 × 104 1.1 × 106 1 50 0.8 9.0 UV glass window type: R3878 R1635

For UV to visible range, fast time ★ R2496 response 400S 160 to 650 420 BA Q q L/8 E678-11N /b 1500 0.03 60 95 9.5 – 76 1250 5 30 100 8.0 × 104 1.1 × 106 2 50 0.7 9.0 R2496 For UV to near IR range, general 500K 300 to 850 ★ 4 5 R1894 purpose (S-20) 420 MA K q L/8 E678-11N /v 1500 0.03 80 120 – 0.2 51 1250 1 10 50 2.1 × 10 4.2 × 10 2 20 0.8 7.8 R1894 13 mm (1/2 ") Dia. Types

2 a ★ a 2 × 10 2a 5 For VUV range, MgF2 window 140 r !3 – 9.8 × 10 × 0.05 R1081 100M 115 to 200 Cs-I MF L/10 E678-12A 2250 0.01 – – – – 9.8 2000 (A/W) 1.0 10 0.03 1.8 18 R1081 × 3 b b 4 10 4b 2 r ★ × × 5 R1080 For UV range, MgF window 200M 115 to 320 Cs-Te MF L/10 E678-12A 1250 0.01 – – – – 28 1000 !3 (A/W) – 1.4 10 5.0 10 0.3 1 2.5 24 R1080 240 4 × 103 b 160 to 320 e ★ b × 4b × 5 R759 For UV range 200S Cs-Te Q L/10 E678-13A/m 1250 0.01 – – – – 28 1000 !3 (A/W) – 1.4 10 5.0 10 0.3 1 2.5 24 R759 For visible range and scintillation Photon counting type: R647P e E678-13A★ × 4 × 6 UV glass window type: R960 R647 counting BA K L/10 /m 1250 0.1 40 100 9.5 – 76 1000 !3 30 100 7.6 10 1.0 10 1 15 2.5 24 R647 400K 420 Synthetic silica window type: R760 For visible range, fast time re- t E678-13A★ × 4 × 6 R4124 sponse BA K L/10 /. 1250 0.03 40 95 9.5 – 76 1000 !9 30 100 8.0 10 1.1 10 1 15 1.1 12 UV glass window type: R4141 R4124

300 to 650 ★ h R2557 Low noise bialkali photocathode 402K LBA K e L/10 E678-13A /, 1500 0.03 25 40 5.5 – 50 1250 !6 50 200 2.5 × 105 5.0 × 106 10h 30 2.2 22 R2557 375 ★ R4177-01 High temperature, ruggedized type 401K HBA K w L/10 E678-13A 1800 0.02 20 40 6.0 – 51 1500 !3 10 20 2.5 × 104 5.0 × 105 0.5 10 2.0 20 R4177-01 Multialkali photocathode for UV to 420 e ★ × 4 × 6 Photon counting type: R1463P R1463 near IR range 500U 185 to 850 MA U L/10 E678-13A/m 1250 0.03 80 120 – 0.2 51 1000 !3 30 120 5.1 10 1.0 10 4 20 2.5 24 R1463

(Unit: mm)

q R1893, R1635, R2496, R1894 w R4177-01 e R647, R2557, R1463, R759 r R1080, R1081 t R4124

13.5 ± 0.5 13.5 ± 0.5 14.5 ± 0.7 13.5 ± 0.5 FACEPLATE 10 MIN. A FACEPLATE 6 MIN. FACEPLATE 10 MIN. 10 MIN. FACEPLATE 8 MIN. FACEPLATE

PHOTOCATHODE PHOTOCATHODE PHOTOCATHODE PHOTOCATHODE 2

PHOTOCATHODE ± 50 1.5 2 ± 2 ± ± 61 71 2 ± SEMI-FLEXIBLE 71 LEADS

11 PIN BASE 13 MAX. 13 PIN BASE 13 MAX. 10 MAX. 45.0 12 PIN BASE 13 PIN BASE JEDEC 13 PIN BASE No. B12-43 13 MAX. 13 MAX. 33 MIN.

P DY10 DY7 DY8 P DY8 6 6 7 8 5 7 DY9 DY6 DY5 DY6 5 9 DY10 4 8 P DY8 37.3 ± 0.5 DY7 4 10 DY4 6 7 8 DY9 DY6 5 9 Temporary Base Removed DY3 3 9 DY4 3 11 DY5 DY2 Bottom View DY7 4 10 DY4 DY10 2 10 2 12 P DY3 IC DY8 P DY10 P DY1 DY2 1 13 7 DY9 DY10 1 11 3 11 6 8 7 DY1 K DY5 DY2 DY9 DY6 DY9 6 7 DY8 6 8 IC K 2 12 5 9 5 8 DY7 DY8 DY3 IC 5 9 SHORT PIN 1 13 SHORT PIN DY7 4 DY7 DY6 DY1 K 10 DY4 4 9 DY5 4 10 DY6

SHORT PIN DY5 3 11 DY5 3 10 DY4 3 11 DY2 DY3 DY4 R1635 R1893, R2496 Others 2 2 11 2 12 DY3 DY3 DY2 DY2 A 9.7 ± 0.4 10.5 ± 0.5 9.7 ± 0.4 1 13 1 12 DY1 1 13 DY1 K DY1 IC K R2496 has a plano-concave faceplate. K SHORT PIN

TPMHA0100EA TPMHA0006EA TPMHA0014EA TPMHA0207EA TPMHA0102EA

32 33 Head-On Type Photomultiplier Tubes (at 25 °C)

A Spectral Response C D E F G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode K Anode to B Socket J Luminous Blue Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window line Sensitivity Rise Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Notes Type No. Code Material No. Min. Typ. Index Transit length Material No. of Socket Voltage Current Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. (A/lm) (A/lm) Typ. (nm) (nm) (Vdc) (mA) (µ A/lm) (µ A/lm) Typ. (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 19 mm (3/4 ") Dia. Types

★ 2 × 102 a For VUV range, MgF2 window 100M 140 Cs-I MF w L/10 E678-12A 2250 0.01 – – – a !5 – × 2a × 5 Cs-Te photocathode type: R976 R972 R972 115 to 200 – 9.8 2000 (A/W) 9.8 10 1.0 10 0.03 0.05 1.6 17 For UV range, synthetic silica win- ★ × 3 b Cs-Te q L/10 E678-12L/⁄3⁄4⁄5 – – b !5 4 10 × 4b × 5 R821 dow 200S 160 to 320 240 Q 1250 0.01 – – 28 1000 (A/W) – 1.0 10 3.6 10 0.3 0.5 2.5 27 R821 For visible range and scintillation Synthetic silica window type: R762 E678-12L ★ ⁄3⁄4⁄5 4 5 R1166 counting 400K 420 BA K q L/10 / 1250 0.1 70 105 10.5 – 85 1000 !5 10 100 8.1 × 10 9.5 × 10 1 5 2.5 27 UV glass window type: R750 R1166

★ R2801 Low noise bialkali photocathode 402K 375 LBA K q L/10 E678-12L /⁄3⁄4⁄5 1500 0.1 30 45 6.0 – 55 1250 !5 50 300 3.7 × 105 6.7 × 106 15h 45h 2.2 25 R2801

Small TTS, for scintillation count- ★ E678-12L ⁄7 5 6 R1450 ing BA K q L/10 / 1800 0.1 70 115 11.0 – 88 1500 !7 100 200 1.5 × 10 1.7 × 10 3 50 1.8 19 R1450

For visible range, fast time re- ★ Synthetic silica window type: 420 E678-12L ⁄1⁄2 5 6 R3478 sponse 400K 300 to 650 BA K y L/8 / 1800 0.1 70 115 11.0 – 88 1700 6 100 200 1.5 × 10 1.7 × 10 10 300 1.3 14 R2076 R3478 E678-12A ★ R5611-01 For visible range, low profile BA K t CC/10 1250 0.1 60 90 10.5 – 85 1000 !8 10 50 4.7 × 104 5.5 × 105 3 20 1.5 17 Button stem type: R5611 R5611-01

High temperature, ruggedized ★ 4 5 R3991 type, low profile HBA K t CC/10 E678-12A 1800 0.02 20 40 6.0 – 51 1500 !8 5 15 1.9 × 10 3.75 × 10 0.1 10 1.0 13 R3991 401K 375 ★ R1281 High temperature photocathode HBA K e L/10 E678-12A 1800 0.02 20 40 6.0 – 50 1500 !5 20 50 6.5 × 104 1.3 × 106 0.5 10 1.9 21 Button stem type: R1281-02 R1281

Multialkali photocathode for visible 500K ★ ⁄3⁄4⁄5 4 6 R1617 to near IR range (S-20) 300 to 850 MA K q L/10 E678-12L/ 1250 0.1 80 120 – 0.2 51 1000 !5 30 120 5.1 × 10 1.0 × 10 4 20 2.5 27 R1617 Multialkali photocathode for UV to ★ Synthetic silica window type: 500U E678-12L /⁄3⁄4⁄5 4 6 R1464 near IR range 185 to 850 420 MA U q L/10 1250 0.1 80 120 – 0.2 51 1000 !5 30 120 5.1 × 10 1.0 × 10 4 20 2.5 27 R2027 R1464

For photon counting in visible to 500K ★ E678-12L ⁄6 h h R1878 near IR range (S-20) 300 to 850 MA K r L/10 / 1500 0.1 80 120 – 0.2 51 1000 !6 30 150 6.1 × 104 1.2 × 106 100 250 1.7 24 Bialkali photocathode type: R2295 R1878

For near IR range, 700K ★ 800 E678-12L ⁄3⁄4⁄5 d 2 5 e e R632-01 QE=0.05 % Typ. at 1.06 µm (S-1) 400 to 1200 Ag-O-Cs K q L/10 / 1500 0.01 10 20 – 0.14 1.9 1250 !5 5 10 9.5 × 10 5.0 × 10 800 2000 2.2 25 R632-01

(Unit: mm)

q R821, R1450, etc. w R972 e R1281 r R1878 t R5611-01, R3991 y R3478

± 19 1 ± ± ± A 18.6 0.7 FACEPLATE 19 ± 1 18.6 0.7 18.6 0.7 13 MIN. FACEPLATE FACEPLATE 15 MIN. FACEPLATE 15 MIN. 15 MIN. FACEPLATE 15 MIN. FACEPLATE 4 MIN.

PHOTOCATHODE MASKED PHOTOCATHODE PHOTOCATHODE PHOTOCATHODE PHOTOCATHODE PHOTOCATHODE A

SEMIFLEXIBLE 13 MAX. 2

LEADS ± 65

2 A ± 2 2 2 ± ± ± 88 80 73 88 12 PIN BASE JEDEC

No. B12-43 45 MIN. SEMI-FLEXIBLE HA COATING LEADS

13 MAX. B SEMI-FLEXIBLE 12 PIN BASE LEADS 13 MAX. A 37.3 ± 0.5 13 MAX.

A 12 PIN BASE 12 PIN BASE 12 PIN BASE 13 MAX. 13 MAX. 12 PIN BASE JEDEC

JEDEC 45 MIN. No. B12-43

No. B12-43 45 MIN.

B B R5611-01 R3991 37.3 ± 0.5 A 30 ± 1.5 28 ± 1.5 37.3 ± 0.5

A Temporary Base Removed B A Temporary Base Removed B Bottom View Bottom View A Temporary Base Removed DY8 B Bottom View DY10 DY8 DY8 DY6 P DY10 DY6 P DY10 DY10 DY10 P 6 7 7 DY10 DY8 P DY10 IC DY8 R821 Others P DY6 7 8 DY9 6 7 DY8 8 DY9 6 7 DY8 6 DY10 5 8 6 DY4 6 DY4 DY9 6 P 9 5 8 P 9 5 8 P 6 7 DY6 DY9 7 DY8 P 6 7 DY6 ± ± 5 5 5 9 5 8 A 19 1 18.6 0.7 DY9 4 9 DY4 5 8 5 8 DY7 4 9 DY6 DY7 DY6 10 10 DY2 4 9 DY9 4 DY7 4 10 DY8 DY7 DY6 R1450 has a plano-concave faceplate. DY9 4 DY2 DY9 4 9 DY4 4 9 IC 4 9 DY4 3 10 DY7 DY2 11 3 10 11 3 10 DY5 DY4 K DY5 DY4 DY7 3 10 DY2 DY5 3 11 DY6 DY5 3 10 DY4 3 10 2 11 DY7 3 K DY7 3 DY7 DY2 DY5 K 2 11 12 2 11 11 2 12 1 12 12 DY3 DY2 DY3 DY2 2 DY3 2 11 2 11 2 1 12 2 1 12 DY5 K DY4 DY3 DY2 DY5 K DY3 DY1 DY5 DY1 DY5 DY1 1 12 1 13 1 12 1 12 1 DY1 K 1 14 DY1 K DY3 DY1 DY1 DY2 DY1 K DY3 DY1 SHORT PIN DY3 DY3 K 18.6mm (3/4") SHORT PIN SHORT PIN 12 i

TPMHA0012EB TPMHA0208EA TPMHA0209EA TPMHA0027EA TPMHA0036EA TPMHA0119EA 34 35 Head-On Type Photomultiplier Tubes (at 25 °C)

A Spectral Response C D E F G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode K Anode to B Socket J Luminous Blue Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window Sensitivity Rise Electron Type No. Remarks Range Wave- cathode line Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Notes Type No. Code Material No. Min. Typ. Index Transit length Material No. of Socket Voltage Current Ratio Voltage Typ. Time (CS 5-58) Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. (A/lm) (A/lm) Typ. (nm) (nm) (Vdc) (mA) (µ A/lm) (µ A/lm) Typ. (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 25 mm (1 ") Dia. Types

★ × 5 6 R5800 For scintillation counting BA K q L/10 E678-14C/⁄8⁄9¤0 1800 0.1 70 95 11.0 – 88 1250 !8 – 190 2.3 10 2.0 × 10 2 15 1.7 22 R5800 300 to 650 420 400K Synthetic silica window type For visible range, fast time re- E678-12A ★ – @2 4.1 × 105 × 6 800 R4998 sponse BA K r L/10 2500 0.1 60 70 9.0 72 2250 100 400 5.7 10 100 0.7 10 : R5320 TTS: 160 ps R4998 25 mm (1 ") Dia. Low Profile Types

× 3 b For UV range ★ b !8 4 10 × 4b × 5 Dark count: 5 s-1(cps) Typ. R2078 201S 160 to 320 240 Cs-Te Q w CC/10 E678-12A 2000 0.015 – – – – 29 1500 (A/W) – 1.5 10 5.0 10 0.015 0.1 1.5 14 R2078 R1924 For visible range 400K 420 BA K e CC/10 E678-14C★/⁄8⁄9¤0 1250 0.1 60 90 10.5 – 85 1000 !8 20 100 9.3 × 104 1.1 × 106 3 20 2.0 19 Photon counting type: R1924P R1924

E678-14C★ 5 6 h h R3550 Low noise bialkali photocathode 402K 300 to 650 LBA K e CC/10 /⁄8⁄9¤0 1250 0.1 30 50 6.5 – 50 1000 !8 20 100 1.2 × 10 2.0 × 10 20 60 2.0 19 R3550 375 ★ R1288 High temperature, ruggedized type 401K HBA K w CC/10 E678-12A 1800 0.02 20 40 6.0 – 51 1500 !8 8 15 1.9 × 104 3.8 × 105 0.1 10 1.5 14 Button stem type: R1288-01 R1288 Synthetic silica window type 500K ★ ⁄8⁄9¤0 × 4 × 5 R1925 For visible to near IR range (S-20) 300 to 850 MA K e CC/10 E678-14C/ 1250 0.1 80 120 – 0.2 51 1000 !8 10 30 1.3 10 2.5 10 3 20 2.0 19 : R1926 R1925 420 Prismatic window, multialkali pho- 502K E678-14C★ ⁄8⁄9¤0 !8 × 4 × 5 R5070 tocathode with high sensitivity 300 to 900 MA K e CC/10 / 1250 0.1 130 230 – 0.25 65 1000 20 100 2.8 10 4.3 10 3 20 2.0 19 R5070

(Unit: mm)

q R5800 w R2078, R1288 e R1924, R1925, R3550, R5070 r R4998

FACEPLATE ± 25.4 0.5 25.4 ± A 25.4 ± 0.5 26 ± 1 21 MIN. FACEPLATE 21 MIN. FACEPLATE 21 MIN. FACEPLATE 20 MIN.

PHOTOCATHODE PHOTO- PHOTOCATHODE CATHODE

PHOTOCATHODE 1.5 A ± 1.5 43.0 ± 1 ± 68.0 13 MAX. SEMIFLEXIBLE 71 LEADS HA COATING A 14 PIN BASE 13 MAX. SMA 13 MAX. 12 PIN BASE CONNECTOR JEDEC No. B12-43

50 MIN. A

14 PIN BASE 13 MAX.

B 12 PIN BASE JEDEC ± 37.3 0.5 No. B12-43 52 MIN.

B

37.3 ± 0.5

A Temporary Base Removed B Bottom View P PIC DY9 P DY10 A Temporary Base Removed B Bottom View DY9 7 8 IC 8 DY10 6 DY10 DY9 6 7 DY8 PIC 6 9 DY7 P P DY10 5 10 5 8 DY9 IC 12 DY8 DY7 5 10 DY10 7 8 13 6 DY8 DY8 DY7 DY6 6 9 DY5 4 11 4 9 DY6 7 DY5 4 11 DY8 DY7 10 DY10 14 5 DY9 DY9 DY6 DY3 3 12 DY6 5 5 8 3 12 DY5 3 10 DY4 R5070 Others DY5 11 DY8 15 DY4 DY3 DY6 4 DY7 DY7 9 DY4 2 13 DY4 4 4 2 13 DY1 2 11 A 46 ± 1.5 43 ± 1.5 (Acc) 16 (Acc) DY3 DY2 3 12 DY2 10 DY1 1 14 DY4 R2078 R1288 14 1 12 DY3 DY6 3 DY5 3 DY2 K DY2 A 0.8 0.5 DY2 DY1 K 2 13 DY5 17 2 11 17 DY1 1 14 DY4 2 G DY3 1 12 G DY3 1 SHORT PIN K K DY2 18 DY1 K DY1 K SHORT PIN TPMHA0240EA TPMHA0039EA TPMHA0040EA TPMHA0093EA 36 37 Head-On Type Photomultiplier Tubes (at 25 °C)

A Spectral Response C D EF G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode B Socket J Luminous Blue K Anode to Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window line Sensitivity Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code Material No. Min. Typ. Index Transit Type No. length Material No. of Socket Voltage Current Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. µ µ Typ. Typ. (A/lm) (A/lm) (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 28 mm (1-1/8 ") Dia. Types

★ R6835 For VUV range, MgF2 window 100M 115 to 200 140 Cs-I MF q B + L/11 E678-14C 2500 0.01 – – – – 12a 2000 @6 – – 1.2 × 103a 1.0 × 105 0.03 0.05 2.8 22 R6835 4Å~103 b For UV range, MgF2 window ★ b × 4b × 5 R6836 200M 115 to 320 Cs-Te MF q B + L/11 E678-14C 1500 0.01 – – – – 28 1000 @6 (A/W) – 1.4 10 5.0 10 0.3 1 4 30 R6836 240 4Å~103 b For UV range, low profile ★ ¤4¤5 b 4b 5 R6834 200S 160 to 320 Cs-Te Q w B + L/11 E678-14C / 1500 0.01 – – – – 28 1000 @6 (A/W) – 1.4 × 10 5.0 × 10 0.3 1 4 30 R6834 For visible range and scintillation ★ 5 6 R6095 counting BA K q B + L/11 E678-14C /¤4¤5 1500 0.1 60 95 11.0 – 88 1000 @6 50 200 1.8 × 10 2.1 × 10 2 10 4 30 Low profile type : R6094 R6095 400K 300 to 650 For visible range, fast time re- E678-14C★ ¤2¤3 × 5 × 6 UV glass window type: R7056 R6427 sponse BA K e L/10 / 2000 0.2 60 95 11.0 – 88 1500 @1 – 475 4.4 10 5.0 10 10 200 1.7 16 Synthetic silica window type: R7057 R6427 420 Multialkali photocathode for UV to Synthetic silica window type: R376 E678-14C★ 4 5 R374 near IR range 500U 185 to 850 MA U q B/11 /¤4¤5 1500 0.1 80 150 – 0.2 64 1000 @6 20 80 3.4 × 10 5.3 × 10 3 15 15 60 High gain type: R1104 R374

Prismatic window, high cathode ★ R5929 sensitivity 502K MA K q B/11 E678-14C /¤4¤5 1500 0.1 130 230 – 0.25 65 1000 @6 30 180 5.1 × 104 7.8 × 105 5 25 15 60 R5929 300 to 900 Extended red multialkali photo- ★ R2228 cathode 501K 600 MA K q B/11 E678-14C /¤4¤5 1500 0.1 100 200 – 0.3 40 1000 @6 20 150 3.0 × 104 7.5 × 105 8 30 15 60 R2228

For near IR range, 700K ★ E678-14C d 2 5 e e R316-02 QE=0.06 % Typ. at 1.06 µm (S-1) 400 to 1200 800 Ag-O-Cs K q B/11 /¤4¤5 1500 0.01 10 20 – 0.14 1.9 1250 @6 5 10 9.5 × 10 5.0 × 10 2000 5000 10 50 R316-02 28 mm (1-1/8 ") Dia. Low Profile Type

For visible range and scintillation r ★ !1 × 5 × 6 R3998-02 R3998-02 counting 400K 300 to 650 420 BA K B + L/9 E678-14C 1500 0.1 60 90 10.5 – 85 1000 50 120 1.1 10 1.3 10 2 10 3.4 23

(Unit: mm)

q R6835, R6836, etc. w R6834 e R6427 r R3998-02

A ± B 28.2 0.8 ± ± FACEPLATE 28.5 0.5 28.5 0.5 FACEPLATE 25 MIN. FACEPLATE 25 MIN. FACEPLATE 25 MIN.

PHOTO- PHOTO- PHOTOCATHODE CATHODE CATHODE PHOTOCATHODE 2 ± 60 2 ± 85 2 C ± 92

14 PIN BASE 13 MAX.

14 PIN BASE 13 MAX.

R6835 R6095 R374 R6836 etc. 14 PIN BASE 13 MAX.

14 PIN BASE 13 MAX.

P DY10 P DY10 Type R6835 R6095, R374 P DY10 P DY9 DY11 DY8 DY7 R316-02, R2228 R6094 7 8 DY11 7 8 DY8 NC 7 8 DY8 DY8 7 8 No. R6836 6 9 6 9 6 9 6 9 R5929 etc. DY9 DY9 DY6 DY6 5 10 DY6 DY9 5 10 DY6 5 10 5 10 DY5 MgF2 and DY7 4 11 DY4 Bulb Others Others DY7 4 11 DY4 DY7 4 11 DY4 IC 4 11 IC Silica bulb DY5 3 12 DY2 3 12 3 12 3 12 DY4 DY3 ± 28.5 ± 0.5 28.5 ± 0.5 DY5 DY2 DY5 DY2 2 13 2 13 A 28.2 0.8 DY3 K 2 13 2 13 1 14 DY2 1 14 DY1 B 23 MIN. 25 MIN. 25 MIN. DY3 1 14 K DY3 1 14 K IC DY1 G K C 92 ± 2 112 ± 2 92 ± 2 IC DY1 IC DY1 SHORT PIN SHORT PIN SHORT PIN SHORT PIN TPMHA0387EA TPMHA0114EA R2228 has a plano-concave faceplate. TPMHA0115EC TPMHA0226EC 38 39 Head-On Type Photomultiplier Tubes (at 25 °C)

A Spectral Response C D E F G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode B Socket J Luminous Blue K Anode to Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window line Sensitivity Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code Material No. Min. Typ. Index Transit Type No. length Material No. of Socket Voltage Current Ratio Voltage Typ. Time (CS 5-58) Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. µ µ Typ. (A/lm) (A/lm) (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 38 mm (1-1/2 ") Dia. Types

For visible range and scintillation ★ × 4 × 5 R980 counting BA K w CC/10 E678-12A/¤7¤8 1250 0.1 70 100 11.5 – 90 1000 !6 10 35 3.3 10 3.7 10 3 5 2.8 40 R980

For scintillation counting, low pro- ★ × 4 × 5 R3886 file 400K 420 BA K r CC/10 E678-12A/¤7¤8 1250 0.1 70 90 10.5 – 85 1000 !6 10 45 4.3 10 5.0 10 3 5 2.5 32 R3886

For scintillation counting, fast time ★ × 4 × 6 R580 response 300 to 650 BA K q L/10 E678-12A/¤7¤83 1750 0.1 70 95 11.0 – 88 1250 !6 10 100 9.7 10 1.1 10 3 20 2.7 37 R580

High temperature, ruggedized ★ ¤7¤83 × 4 × 5 R1705 type 401K 375 HBA K e CC/10 E678-12A/ 1800 0.02 20 40 6.0 – 51 1500 !6 5 20 2.5 10 5.0 10 0.5 10 2.0 35 R1705 500K Multialkali photocathode for visible ★ ¤7¤83 × 4 × 5 UV glass window type: R1508 R1387 to near IR range (S-20) 300 to 850 420 MA K w CC/10 E678-12A/ 1250 0.2 80 150 – 0.2 64 1000 !6 10 50 2.1 10 3.3 10 4 25 2.8 40 Synthetic silica window type: R1509 R1387 Extended red multialkali photo- 300 to 900 w ★ ¤7¤83 !6 × 4 × 5 R2066 cathode 501K 600 MA K CC/10 E678-12A/ 1500 0.2 120 200 – 0.3 40 1000 20 50 1.0 10 2.5 10 8 30 2.8 40 R2066 For near IR range, 700K 400 to 1200 w E678-12A★ ¤7¤83 d !6 × 2 × 5 e e R1767 QE=0.08 % Typ. at 1.06 µm (S-1) 800 Ag-O-Cs K CC/10 / 1500 0.01 10 25 – 0.14 2.4 1250 1 5 4.8 10 2.0 10 7000 20000 2.2 37 R1767

(Unit: mm)

q R580 w R980, R1387, R2066, etc. e R1705 r R3886

38 ± 1 ± FACEPLATE 38.0 ± 0.7 FACEPLATE 38 1 FACEPLATE 38.0 ± 0.7 34 MIN. FACEPLATE 34 MIN. 34 MIN. 34 MIN.

PHOTO- PHOTO- CATHODE PHOTO- CATHODE PHOTO- CATHODE CATHODE 1.5 ± 2 ± 2 63.5 ± 2 87 ± 99 109 116 MAX.

127 MAX 12 PIN BASE JEDEC No. B12-43 12 PIN BASE A

JEDEC 13 MAX. No. B12-43

A 13 MAX.

SEMI-FLEXIBLE 12 PIN BASE 37.3 ± 0.5 LEADS 0.7 MAX. JEDEC 70 MIN. No. B12-43

± 37.3 0.5 12 PIN BASE 70 MIN. JEDEC B No. B12-43 37.3 ± 0.5

B

37.3 ± 0.5

P DY10 DY10 A Temporary Base Removed A Temporary Base Removed B Bottom View P B Bottom View DY9 6 7 DY8 DY9 6 7 DY8 DY10 DY10 P DY10 5 8 5 8 P DY10 P 9 DY8 P 9 6 7 DY7 DY6 DY9 6 7 DY8 DY8 DY9 DY8 4 9 DY7 4 9 DY6 6 10 6 10 5 8 DY6 5 8 DY9 5 11 DY9 DY6 3 10 R2066 has a plano- DY7 DY6 5 11 DY7 4 9 DY6 DY5 DY4 DY5 3 10 DY4 4 9 concave faceplate. DY7 4 12 DY4 DY7 4 12 DY4 2 11 3 10 DY3 DY2 2 11 DY5 3 10 DY4 DY5 DY4 1 12 DY3 DY2 3 13 3 13 1 12 DY5 DY2 DY5 DY2 2 11 DY1 K DY1 K 2 11 2 DY3 DY2 2 1 DY2 DY3 1 12 DY3 DY3 12 38mm (1 1/2") 1 15 1 15 DY1 K DY1 K DY1 K DY1 K TPMHA0121EA TPMHA0228EA TPMHA0042EB TPMHA0104EA 40 41 Head-On Type Photomultiplier Tubes (at 25 °C)

A Spectral Response C D E F G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode Anode to B Socket J Luminous Blue K Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Windowline Sensitivity Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code MaterialNo. Min. Typ. Index Transit Type No. length Material No. of Socket Voltage Current Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. µ µ Typ. (A/lm) (A/lm) Typ. (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 51 mm (2 ") Dia. Types with Plastic Base

For visible range and scintillation r ■ i × 4 × 5 For gamma cameras: R6231-01 R6231 counting, low profile type BA K B + L/8 E678-14V 1500 0.1 80 110 12.0 – 95 1000 3 30 2.6 10 2.7 10 2 20 5.0 48 R6231 Synthetic silica window type R1306 For visible range and scintillation BA K e B/8 E678-14V■/‹0 1500 0.1 80 110 12.0 – 95 1000 w 3 30 2.6 × 104 2.7 × 105 2 20 7.0 60 R1306 counting : R2220 Multialkali photocathode type For visible range and scintillation w ■ × 4 × 6 R2154-02 counting 400K 300 to 650 BA K L/10 E678-14V/‹1 1750 0.1 60 90 10.5 – 85 1250 !6 20 90 8.5 10 1.0 10 5 20 3.4 31 : R3256 R2154-02 420 Synthetic silica window type For visible range, fast time re- t ★ × 6 × 7 R1828-01 sponse BA K L/12 E678-20A/‹6 3000 0.2 60 90 10.5 – 85 2500 #2 200 1800 1.7 10 2.0 10 50 400 1.3 28 : R2059 R1828-01 Synthetic silica type: R3235-01 For photon counting, fast time re- y ★ × 6 × 7 R3234-01 sponse BA K L/12 E678-20A 2500 0.1 60 80 9.0 – 72 2000 #7 500 2000 2.0 10 2.5 10 1 10 1.3 28 Multialkali type: R3237-01 R3234-01

500K ■ 4 5 R550 For visible to near IR range (S-20) 300 to 850 MA K q B/10 E678-14V/¤9‹2 1500 0.3 100 150 – 0.2 64 1000 !4 20 100 4.3 × 10 6.7 × 10 10 30 9.0 70 R550

(Unit: mm)

q R550 w R2154-02 e R1306 r R6231 t R1828-01 y R3234-01

51.0 ± 0.5 ± 51.0 ± 0.5 53.0 ± 1.5 ± 51.0 0.5 51.0 ± 0.5 53.0 1.5 FACEPLATE FACEPLATE FACEPLATE 46 MIN. 46 MIN. FACEPLATE FACEPLATE 46 MIN. FACEPLATE 46 MIN. 46 MIN. 10 MIN.

PHOTO- PHOTO- PHOTO- PHOTO- CATHODE CATHODE CATHODE CATHODE PHOTO- PHOTO- CATHODE CATHODE 3 ± 2 2 2 14 PIN BASE ± 90 ± ± JEDEC 3 113 MAX. 114 124 124

NO. B14-38 ± 14 PIN BASE 137 MAX. HA COATING 3 JEDEC ±

14 PIN BASE 146

14 PIN BASE 147 MAX. 147 MAX. No. B14-38 JEDEC JEDEC 168 MAX. No. B14-38 170

No. B14-38 192 MAX. HA COATING 56.5 ± 0.5

± 20 PIN BASE 56.5 0.5 JEDEC 56.5 ± 0.5 56.5 ± 0.5 No. B20-102 20 PIN BASE JEDEC 52.5 MAX. No. B20-102

52.5 MAX.

DY7 DY8 DY7 DY8 DY7 DY8 DY7 DY8 DY6 8 DY9 DY6 8 DY9 DY6 8 IC P DY12 P DY12 7 7 7 DY6 7 8 IC IC DY10 IC DY10 6 9 6 9 6 9 6 9 DY11 9 10 11 12 DY8 DY11 9 10 11 12 DY8 13 DY5 DY10 DY5 DY10 DY5 IC DY5 IC DY9 8 DY6 DY9 8 13 DY6 5 10 5 10 5 10 5 10 7 14 7 14 DY7 DY4 DY7 DY4 DY4 4 11 P DY4 4 11 P DY4 4 11 P DY4 4 11 P 6 15 6 15 DY5 5 16 DY4 DY5 5 16 DY4 3 12 3 12 3 12 3 12 DY3 IC IC 4 17 DY2 IC 4 17 DY2 DY3 IC DY3 IC DY3 IC 2 13 3 18 3 18 DY3 2 19 IC DY3 19 IC 2 13 2 13 2 13 DY2 1 14 G 20 2 (G2) & DY1 1 G1 DY1 1 20 NC DY2 1 14 G DY2 1 14 G DY2 1 14 G DY1 K IC K IC K DY1 K DY1 K DY1 K

TPMHA0210EB TPMHA0296EA TPMHA0089EB TPMHA0388EB TPMHA0064EC TPMHA0004EB 42 43 Head-On Type Photomultiplier Tubes (at 25 °C)

A Spectral Response C D E F G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode K Anode to B Socket J Luminous Blue Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Windowline Sensitivity Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code MaterialNo. Min. Typ. Index Transit Type No. length Material No. of Socket Voltage Current Typ. Time Ratio Voltage Min. Typ. Typ. Typ. Max. Time Stages Assembly (CS 5-58) Typ. µ µ Typ. (A/lm) (A/lm) Typ. (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 51 mm (2 ") Dia. Types with Glass Base

For photon counting in visible r ★ × 5 × 6 h h R464 range BA K B/12 E678-21A/‹5‹7 1500 0.01 30 50 – – 50 1000 #5 100 300 3.0 10 6.0 10 5 15 13 70 Synthetic silica window type: R585 R464

For visible range and scintillation w ★ × 4 × 6 UV glass window type: R5113-02 R329-02 counting BA K L/12 E678-21A/‹4‹8 2700 0.2 60 90 10.5 – 85 1500 #4 30 100 9.4 10 1.1 10 6 40 2.6 48 Synthetic silica window type: R2256-02R329-02 For visible range and liquid scintil- e ★ × 5 × 6 k k R331-05 lation counting 400K 420 BA K L/12 E678-21A/‹4‹8 2500 0.2 60 90 10.5 – 85 1500 #4 30 120 1.1 10 1.3 10 18 25 2.6 48 Synthetic silica window type: R331 R331-05 For visible range, fast time re- Use of PMT assembly (H2431-50) 300 to 650 q ★ × 5 × 6 R2083 sponse BA K L/8 E678-19F 3500 0.2 60 80 10.0 – 80 3000 e 50 200 2.0 10 2.5 10 100 800 0.7 16 is recommended. (See P.75) R2083

For visible range, fast time re- ★ 6 7 R5496 sponse BA K y L/10 E678-19E 3000 0.2 60 80 10.0 – 80 2500 @2 100 1000 1.0 × 10 1.3 × 10 100 800 1.5 24 TTS: 270 ps R5496

★ R4607-01 High temperature, ruggedized type 401K 375 HBA K t CC/10 E678-15B 1800 0.02 20 40 6.0 – 51 1500 !6 5 20 2.5 × 104 5.0 × 105 3 50 2.5 29 R4607-01

For photon counting in visible to 500K ★ 5 6 h h R649 near IR range (S-20) 300 to 850 420 MA K r B/12 E678-21A/‹5‹7 1500 0.01 80 120 – 0.2 51 1000 #5 100 800 3.4 × 10 6.7 × 10 200 350 13 70 R649

(Unit: mm) q R2083 w R329-02 t R4607-01 y R5496

53 ± 1 53.0 ± 1.5 53.0 ± 1.5 FACEPLATE 52 ± 1 46 MIN. FACEPLATE 46 MIN. 46 MIN. FACEPLATE FACEPLATE 46 MIN.

PHOTO- PHOTO- CATHODE PHOTO- CATHODE CATHODE PHOTOCATHODE

2 IC IC ± IC IC NC NC 2 2 NC IC DY10 IC DY10 DY10 IC DY8 ± SH ± 10 HA COATING IC DY8 9 10 11

11 2

9 80 P 8 12 DY6 DY12 10 11 12 P 7 8 9 DY8 P 8 12 DY8 9 13 DY6 ± 7 13 8 14 6 10 7 13 DY4 127 P DY4 DY6 HA COATING 121 6 14 7 15 DY9 DY6 DY9 6 14 DY11 DY2 5 11 15 DY4 16 121 DY7 5 6 DY7 5 15 DY4 4 16 DY2 DY9 5 17 G DY7 4 12 DY4 DY5 4 16 DY2 3 17 DY7 4 18 IC DY5 DY3 2 18 IC 3 19 DY5 3 13 DY2 HA 3 17 1 19 DY5 2 20 IC DY3 G2 & DY1 G1 1 21 2 14 2 18 IC ACC K DY3 IC COATING 1 19 DY1 K DY3 1 15 IC G2 & DY1 G1 ACC K ∗CONNECT SH TO DY5 SHORT PIN LIGHT DY1 K 15 PIN BASE SHORT PIN TIGHT SHIELD SHORT PIN 19 PIN BASE 13 MAX.

SMA 19 PIN BASE CONNECTOR 21 PIN BASE 13 MAX. 13 MAX. 13 MAX. TPMHA0185EC TPMHA0123ED TPMHA0003EC TPMHA0168EC

e R331-05 r R464, R649

53.0 ± 1.5 ± FACEPLATE 52.0 1.5 46 MIN. FACEPLATE 5 × 8

0.2 PHOTO- ± PHOTO- CATHODE CATHODE 50

SH IC DY10 IC 2 IC DY8 IC DY10 10 11 12 HA COATING ± DY12 9 13 DY6 IC DY8 8 14 10 11 12 DY12 9 13 DY6 P 7 15 DY4 P 8 14 DY4 126 DY11 6 16 DY2 2 7 15

HA COATING ± DY9 5 17 G DY11 6 16 DY2 4 18 IC 17 G DY7 3 19 DY9 5 2 20 IC 18 DY5 1 21 DY7 4 IC DY3 IC 3 19 DY1 K 2 20 DY5 1 21 IC ∗ DY3 IC CONNECT SH TO DY5 DY1 K

21 PIN BASE 21 PIN BASE 13 MAX. 126 13 MAX. TPMHA0072EC TPMHA0216EA

44 45 Head-On Type Photomultiplier Tubes (at 25 °C)

A Spectral Response C D EF G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode Anode to B Socket J Luminous Blue K Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window line Sensitivity Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code Material No. Min. Typ. Index Transit Type No. length Material No. of Socket Voltage Current Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. µ µ Typ. (A/lm) (A/lm) Typ. (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 51 mm (2 ") Dia. Types with Glass Base Multialkali photocathode for UV to ★ × 4 5 R375 near IR range 500S 160 to 850 420 MA Q q B/10 E678-15B /›0 1500 0.1 80 150 – 0.2 64 1000 !4 20 80 3.4 10 5.3 × 10 5 20 9.0 70 R375 Extended red multialkali photocath- ★ × 4 5 R669 ode 501K 300 to 900 600 EMA K q B/10 E678-15B /›0 1500 0.1 140 230 – 0.35 50 1000 !4 20 75 1.7 10 3.3 × 10 7 15 9.0 70 R669 GaAs photocathode for UV to (Note) 160 to 930 ★ × 4 × 5 j j R943-02 930 nm range 650S 300 to 800GaAs(Cs) Q e L/10 E678-21C /‹3‹9 2200 0.001 300 600 – 0.58 71 1500 @0 150 300 3.6 10 5.0 10 20 50 3.0 23 R943-02 (Note) × 3 InGaAs photocathode for 300 nm 9.4 3.1 10 j j R3310-02 e ★ @0 × 5 to 1040 nm range 851K 300 to 1040 400 InGaAs K L/10 E678-21C /‹3‹9 2200 0.001 80 150 – 0.4 (at 852.1 nm) 1500 15 50 (at 852.1nm) 3.3 10 30 150 3.0 23 R3310-02

Extended red multialkali photocath- 4 R2257 w ★ 50 #4 2.2 × 10 × 5 ode 501K 300 to 900 600 EMA K L/12 E678-21A /‹4 2700 0.2 140 230 – 0.35 1500 15 100 4.3 10 30 100 2.6 48 R2257

(Note) For cooling operation, another ceramic socket, type number E678-21D (option) is recommended.

(Unit: mm)

q R375, R669 w R2257 e R943-02, R3310-02

51.0 ± 1.5 52 ± 1 FACEPLATE 46 MIN. FACEPLATE 51 ± 1 FACEPLATE 46 MIN.

PHOTO- PHOTO- CATHODE PHOTO- CATHODE CATHODE 10 × 10 2 ± 2 88 ± 2 ± 112

126 HA COATING

OPTICAL SHIELD

21 PIN BASE 14 MAX.

15 PIN BASE

13 MAX. 21 PIN BASE 13 MAX.

IC DY9 DY7 SH IC DY10 IC IC DY9 P 7 8 9 IC DY8 IC DY7 DY5 10 11 12 10 11 12 6 10 DY12 9 13 DY6 IC 9 13 DY5 IC DY3 P 8 14 DY4 P 8 14 DY3 5 11 7 15 7 15 DY11 DY10 DY1 DY10 4 12 DY1 6 16 DY2 6 16 R669 has a plano-concave faceplate. DY9 G DY8 5 17 IC 3 13 5 17 DY8 4 18 K DY7 4 18 IC DY6 IC 2 14 3 19 3 19 DY6 1 15 G 2 20 DY4 2 20 IC DY5 1 21 IC 1 21 DY4 DY2 DY3 IC DY2 IC DY1 K K IC SHORT PIN ∗ CONNECT SH TO DY5

TPMHA0211EA TPMHA0359EA TPMHA0021EC 46 47 Head-On Type Photomultiplier Tubes (at 25 °C)

A Spectral Response C D EF G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode K Anode to B Socket J Luminous Blue Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window line Sensitivity Rise Electron Type No. Remarks Range Wave- cathode Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Notes Type No. Code Material No. Min. Typ. Index Transit length Material No. of Socket Voltage Current Ratio Voltage Typ. Time (CS 5-58) Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. (A/lm) (A/lm) Typ. (nm) (nm) (Vdc) (mA) (µ A/lm) (µ A/lm) Typ. (mA/W) (Vdc) (A/W) (nA) (nA) (ns) (ns) 76 mm (3 ") Dia. Types For scintillation counting, 8-stage R1307 BA K q B/8 E678-14V■/‹0 1500 0.1 80 110 12.0 – 95 1000 w 3 30 2.6 × 104 2.7 × 105 20 8.0 64 K-free borosilicate glass type: R1307-07R1307 dynodes 2 For gamma cameras: R1307-01 For scintillation counting, low pro- w ■ × 4 × 5 R6233 file type 400K 300 to 650 420 BA K B + L/8 E678-14V 1500 0.1 80 110 12.0 – 95 1000 i 3 30 2.6 10 2.7 10 2 20 6.0 52 For gamma cameras: R6233-01 R6233 For scintillation counting, 12-stage e ★ × 5 × 6 R6091 dynodes BA K L/12 E678-21A 2500 0.2 60 90 10.5 – 85 1500 #4 50 450 4.3 10 5.0 10 10 60 2.6 48 R6091 127 mm (5 ") Dia. Types

For scintillation counting, 10-stage r ■ × 4 × 5 R877 dynodes BA K B/10 E678-14V /¤9‹2 1500 0.1 60 80 10.0 – 80 1250 !4 20 40 4.0 10 5.0 10 10 50 10.0 90 K-free borosilicate glass type: R877-01R877 400K For scintillation counting, 14-stage 300 to 650 t ★ × 6 × 7 8-stage dynode type: R4144 R1250 dynodes, fast time response BA K L/14 E678-20A /›2›3 3000 0.2 55 70 9.0 – 72 2000 $0 300 1000 1.0 10 1.4 10 50 300 2.5 54 R1250 420 For visible to near IR, variant of 500K r E678-14V■/¤9‹2 !4 × 4 × 5 R1513 R877 with venetian blind dynodes (S-20) 300 to 850 MA K VB/10 2000 0.1 100 150 – 0.2 64 1500 10 50 2.1 10 3.3 10 30 150 7.0 82 R1513 For scintillation counting,14-stage y E678-20A★ × 6 × 7 R1584 dynodes, fast time response 400U 185 to 650 BA U L/14 3000 0.2 55 70 9.0 – 72 2000 $0 300 1000 1.0 10 1.4 10 50 300 2.5 54 R1584

(Unit: mm) q R1307 w R6233 e R6091 r R877, R1513 t R1250 y R1584

76.0 ± 0.8 76.0 ± 0.8 76 ± 1 FACEPLATE 133.0 ± 1.5 133 ± 2 FACEPLATE 70 MIN 65 MIN. 133 ± 2 FACEPLATE 70 MIN. 111 MIN. 120 MIN. FACEPLATE 120 MIN. FACEPLATE

PHOTO- CATHODE PHOTO- PHOTO- PHOTOCATHODE PHOTO- CATHODE CATHODE CATHODE 3

51.5 ± 1.5 ± 14 PIN BASE FACEPLATE 2 3 3 ± ± ± ± 51.5 1.5 JEDEC 100 PHOTO- 123 MAX.

No. B14-38 171 137 CATHODE 14 PIN BASE 127 53.5 MAX. 194 MAX. JEDEC 150 MAX. HA COATING 5

No. B14-38 ± 5 ± 5 259 ± 5 276 14 PIN BASE ± 259 JEDEC 276 No. B14-38 HA COATING 56.5 ± 0.5

± 56.5 ± 0.5 21 PIN BASE 56.5 0.5 20 PIN BASE JEDEC 13 MAX. No. B20-102 20 PIN BASE JEDEC No. B20-102

52.5 MAX.

52.5 MAX.

SH IC DY10 DY7 DY8 DY7 DY8 IC DY8 DY6 10 11 12 DY14 DY14 DY6 8 IC 7 8 IC DY12 13 DY6 DY7 DY8 IC P DY12 IC P DY12 7 6 9 9 6 9 8 14 DY6 8 DY9 DY13 10 11 DY10 DY13 10 11 DY10 DY5 IC P DY4 7 9 12 9 12 DY5 10 IC 5 10 7 15 6 9 DY11 8 13 DY8 DY11 8 13 DY8 5 14 14 DY11 6 16 DY2 DY5 5 10 DY10 7 7 DY4 11 P DY9 6 15 DY6 DY9 6 15 DY6 DY4 4 11 P 4 DY9 5 17 G DY4 4 11 P 5 16 DY4 DY7 5 16 DY4 4 18 DY7 3 12 DY3 3 12 IC DY7 IC 4 17 4 17 DY3 IC 3 19 3 12 DY5 DY2 DY5 DY2 20 DY3 IC 3 18 3 18 2 13 2 13 DY5 2 21 IC DY3 DY3 IC 1 2 13 2 19 IC 2 19 DY2 1 14 G DY2 1 14 G DY3 IC 1 20 G2 & DY1 1 20 DY1 DY2 1 14 G G2 & DY1 G1 G1 DY1 K DY1 K K IC K IC K DY1 K ∗ CONNECT SH TO DY5

TPMHA0078EA TPMHA0389EB TPMHA0285EB TPMHA0074EB TPMHA0018EA TPMHA0187EB 48 49 Hemispherical Envelope Photomultiplier Tubes (at 25 °C)

A Spectral Response C D E F G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode K Anode to B Socket J Luminous Blue Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Radiant Cathode Current Curve Window Sensitivity Rise Electron Type No. Remarks Range Wave- cathode line Cathode Anode Typ. Supply Luminous Radiant Gain (After 30 min.) Notes Type No. Code Material No. Min. Typ. Index Transit length Material No. of Socket Voltage Current Voltage Typ. Time (CS 5-58) Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. (nm) (nm) (Vdc) (mA) (µ A/lm) (µ A/lm) Typ. (mA/W) (Vdc) (A/lm) (A/lm) (A/W) (nA) (nA) (ns) (ns) Hemispherical Envelope Types

For high energy physics research, ★ 5 7 R5912 8 " dia. BA K q B + L/10 E678-20A 1800 0.1 – 70 9.0 72 1500 @5 – 700 7.2 × 10 1.0 × 10 50 700 3.8 55 R5912 400K 300 to 650 420 For high energy physics research, w ★ × 5 × 7 R3600-02 20 " dia. BA K VB/11 E678-20A 2500 0.1 – 60 8.0 65 2000 @9 – 600 6.5 10 1.0 10 200 1000 10 95 R3600-02

(Unit: mm)

q R5912 w R3600-02

508 ± 10 FACEPLATE 460 202 ± 5 INPUT WINDOW 190MIN.

R131

R PHOTOCATHODE 315 188 PHOTOCATHODE 10

± R150

20

R 220 290MAX.

84.5 ± 2 62 20 ± 195 560 20-PIN BASE JEDEC No. B20-102 52.5MAX. 683 MAX.

254 ± 10 175 0 3 R

20 PIN BASE 82 ± 2 JEDEC No. B20-102 50

52.5 MAX.

NC IC NC DY10 P 9 10 11 12 DY8 DY9 8 13 7 14 DY6 NC 15 NC DY10 IC 6 P DY8 5 16 DY7 DY4 DY11 9 10 11 12 DY6 DY5 4 17 DY2 8 13 3 18 DY9 7 14 DY4 DY3 2 19 Focus1 IC 1 20 DY7 6 15 Focus3 Focus2 5 16 DY2 DY1 K IC DY5 4 17 Focus2 (Bottom View) 3 18 DY3 2 19 K 1 20 DY1 Focus3 Focus1 IC

TPMHA0261EB TPMHA0218EB

50 51 Special Envelope Photomultiplier Tubes (at 25 °C)

A Spectral Response C D E F G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode K Anode to B Socket J Luminous Blue Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Radiant Cathode Current Curve Window line Sensitivity Luminous Rise Electron Type No. Remarks Range Wave- cathode Cathode Anode Typ. Supply Radiant Gain (After 30 min.) Notes Type No. Code Material No. Min. Typ. Index Transit length Material No. of Socket Voltage Current Voltage Typ. Time (CS 5-58) Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. (nm) (nm) (Vdc) (mA) (µ A/lm) (µ A/lm) Typ. (mA/W) (Vdc) (A/lm) (A/lm) (A/W) (nA) (nA) (ns) (ns)

For scintillation counting, 60 mm q ■ × 4 × 5 R6234 dia. hexagonal faceplate, low profile BA K B + L/8 E678-14V 1500 0.1 80 110 12.0 95 1000 i 3 30 2.6 10 2.7 10 2 20 6.0 52 For gamma cameras: R6234-01 R6234

For scintillation counting, w ■ × 4 × 5 R6236 60 mm × 60 mm square faceplate, low profile BA K B + L/8 E678-14V 1500 0.1 80 110 12.0 95 1000 i 3 30 2.6 10 2.7 10 2 20 6.0 52 For gamma cameras: R6236-01 R6236 400K 300 to 650 420 For scintillation counting, 76 mm e ■ × 4 × 5 R6235 dia. hexagonal faceplate BA K B + L/8 E678-14V 1500 0.1 80 110 12.0 95 1000 i 3 30 2.6 10 2.7 10 2 20 6.0 52 For gamma cameras: R6235-01 R6235 For scintillation counting, r ■ × 4 × 5 For gamma cameras: R6237-01 R6237 76 mm × 76 mm square faceplate, low profile BA K B + L/8 E678-14V 1500 0.1 80 110 12.0 95 1000 i 3 30 2.6 10 2.7 10 2 20 6.0 52 R6237

(Unit: mm) q R6234 w R6236 e R6235 r R6237 0.6 1.0 1 ± ± ± 1.5 ± 60 MIN. 85 54 MIN. 79 MIN. 67.5 59.5 70 MIN. 76.0

± 59.5 ± 0.5 59.5 1.0 76.0 ± 1.5 ± FACEPLATE FACEPLATE 76.0 1.5 FACEPLATE 55 MIN. 54 MIN. 70 MIN. FACEPLATE 70 MIN.

PHOTO- PHOTO- CATHODE PHOTO- CATHODE PHOTO- CATHODE CATHODE 3 3 3 3 ± ± ± ± ± ± 51.5 1.5 51.5 1.5 51.5 ± 1.5 51.5 ± 1.5 100 100 100 100 123 MAX. 14 PIN BASE 123 MAX. 123 MAX. 14 PIN BASE

14 PIN BASE 123 MAX. JEDEC JEDEC JEDEC No. B14-38 14 PIN BASE No. B14-38 No. B14-38 JEDEC No. B14-38

± ± 56.5 0.5 56.5 ± 0.5 56.5 0.5 56.5 ± 0.5

DY7 DY8 DY7 DY8 DY7 DY8 DY7 DY8 DY6 7 8 IC DY6 IC DY6 7 8 IC 6 9 7 8 DY6 7 8 IC 6 9 6 9 6 9 DY5 5 10 IC DY5 IC DY5 5 10 IC 5 10 DY5 5 10 IC DY4 4 11 P DY4 4 11 P DY4 4 11 P DY4 4 11 P DY3 3 12 IC 3 12 DY3 3 12 IC DY3 IC DY3 3 12 IC 13 13 2 2 13 2 DY2 1 14 G 2 13 DY2 1 14 G DY2 1 14 G DY2 1 14 G DY1 K DY1 K DY1 K DY1 K

TPMHA0390EB TPMHA0392EB TPMHA0391EB TPMHA0393EB 52 53 Special Envelope Photomultiplier Tubes (at 25 °C)

A Spectral Response C D E F G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode K Anode to B Socket J Luminous Blue Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Radiant Cathode Current Curve Window line Sensitivity Luminous Rise Electron Type No. Remarks Range Wave- cathode Cathode Anode Typ. Supply Radiant Gain (After 30 min.) Notes Type No. Code Material No. Min. Typ. Index Transit length Material No. of Socket Voltage Current Voltage Typ. Time (CS 5-58) Min. Typ. Typ. Typ. Max. Time Stages Assembly Typ. Typ. (nm) (nm) (Vdc) (mA) (µ A/lm) (µ A/lm) Typ. (mA/W) (Vdc) (A/lm) (A/lm) (A/W) (nA) (nA) (ns) (ns)

R2248 10 mm × 10 mm square envelope BA K q L/8 E678-11N★/v 1500 0.03 60 95 9.5 76 1250 q 30 100 8.0 × 104 1.1 × 106 1 50 0.9 9 R2248 × R2102 13 mm 13 mm square envelope BA K w L/10 E678-13A★/m 1250 0.1 40 100 9.5 76 1000 !3 30 100 7.6 × 104 1.0 × 106 1 15 2.5 24 R2102 25 mm × 25 mm square envelope400K 300 to 650 420 R2497 BA K e L/10 E678-12A★ 1800 0.1 70 115 11.0 88 1500 !9 50 300 2.3 × 105 2.6 × 106 10 100 2.4 22 R2497

Rectangular dual structure in ★ 5 6 Flying lead type: R1548-02 R1548 single envelope BA K r L/10 E678-17A 1750 0.1 60 80 9.5 76 1250 @1 50 200 1.9 × 10 2.5 × 10 20 250 1.8 20 R1548

(Unit: mm)

q R2248 w R2102 e R2497 r R1548 0.5

± 8 MIN. 8 MIN. 0.5 13.5 ± 10 MIN. 23 MIN. 0.5 26.0 ± ± 9.8 0.4 0.4 ± 18 MIN. ± 24.0 8 MIN. 26.0 0.5 9.8 13.5 ± 0.5 23 MIN. A Temporary Base Removed FACEPLATE 8 MIN. FACEPLATE FACEPLATE 24.0 ± 0.5 10 MIN. P FACEPLATE DY9 9 DY10 6 10 DY7 DY8 5 11 PHOTOCATHODE PHOTOCATHODE PHOTOCATHODE PHOTOCATHODE DY5 4 1.5 ± 3 DY3

45.0 14 2 2 ± DY6

18 15 ±

71 17 16 70 1.5 DY1 DY4 ± DY2 K 98.0

11 PIN BASE 10 MAX.

B Bottom View

SEMI-FLEXIBLE P DY10 17 PIN BASE LEADS 6 7 13 PIN BASE DY9 DY8 5 8 13 MAX. 13 MAX. DY7 4 9 DY6 A 3 10 12 PIN BASE DY5 DY4 JEDEC 2 11 DY3 P DY10 No.B12-43 13 MAX. 1 12 DY2 DY7 DY8 DY10 P DY8 DY1 P2 DY8 6 6 7 8 K 5 7 DY9 DY6 P1 8 9 10 DY7 DY5 DY6 5 9 50 MIN. 7 11 4 8 DY9 DY6 6 12 DY7 4 10 DY4 DY4 3 9 DY7 5 13 DY3 DY4 3 11 B DY5 DY2 DY5 4 14 DY2 2 10 2 12 DY3 IC 37.4 ± 0.7 DY3 3 15 DY1 1 11 DY2 1 13 2 16 IC DY1 K 1 17 IC K DY1 IC 12 PIN BASE IC K SHORT PIN SHORT PIN JEDEC No.B12-43 SHORT PIN TPMHA0098EB TPMHA0096EA TPMHA0105EB TPMHA0223EA 54 55 Tubes for Highly Magnetic Environments (at 25 °C) AFGSpectral Response Maximum RatingsH Cathode Sensitivity Cathode SensitivityLMA Anode Characteristics Anode to B Peak Dynode Socket J Quantum Blue Anode GainAnode Dark Current Time Response Cathode Tube Outline Curve Range Wave- Structure Anode to Average Efficiency Luminous Sensitivity Luminous at at at (After 30 min.) Electron Type No. Supply Notes Type No. Diameter No. code length Cathode Anode at 390nm Typ. Index Sensitivity 0 0.5 1.0 Rise Time Transit Time Voltage No. of Socket Voltage Current Typ. (CS 5-58) Typ. tesla tesla tesla Typ. Max. Typ. Typ. mm (inch) (nm) (nm) Stages Assembly (V) (mA) (%) (µ A/lm) Typ. (V) (A/lm) Typ. Typ. Typ. (nA) (nA) (ns) (ns) High Gain Types

q ★ × 5 × 5 × 4 Assembly type R5505 25/(1) FM/15 E678-17A /›4 2300 0.01 23 80 9.5 2000 $1 40 5 10 2.3 101.8 10 5 30 1.5 5.6 :H6152-01 R5505

6 5 4 Assembly type R5946 38/(1.5) w FM/16 E678-19D 2300 0.01 23 80 9.5 2000 $2 80 1 × 10 4.3 × 102.9 × 10 5 30 1.9 7.2 :H6153-01 R5946

7 6 5 Assembly type R5924 51/(2) e 400K 300 to 650 420 FM/19 – 2300 0.1 22 70 9.0 2000 $3 700 1 × 10 4.1 × 102.5 × 10 30 200 2.5 9.5 :H6614-01 R5924

R6504 64/(2.5) r FM/19 – 2300 0.1 22 70 9.0 2000 $3 700 1 × 107 4.1 × 106 2.0 × 105 50 300 2.7 11.0 R6504

7 6 5 Assembly type R5542 78/(3) t FM/19 – 2300 0.1 22 70 9.0 2000 $3 600 1 × 10 3.0 × 101.7 × 10 80 400 2.9 12.3 :H6155-01 R5542

These tubes use fine mesh dynodes and offer excellent pulse linearity and TTS characteristics. UV glass window type R5506 (1 "), R6148 (1.5 "), R6608 (2 "), R6505 (2.5 "), R5543 (3 ") are available.

(Unit: mm)

q R5505 w R5946 t R5542

FACEPLATE 78 ± 1 25.8 ± 0.7 39 ± 1 64 MIN. FACEPLATE 17.5 MIN. FACEPLATE 27 MIN.

PHOTO- PHOTOCATHODE CATHODE 1.5

± HA COATING PHOTOCATHODE 2 2 ± ± 40.0 HA COATING 50 55 HA COATING

17 PIN BASE

13 MAX. SEMIFLEXIBLE 19 PIN BASE LEADS 0.9 13 MAX. 13 MAX. 55

DY15 P IC DY 15 DY13 DY16 DY 13 P 9 10 11 9 DY 14 8 12 DY 11 8 10 DY11 DY14 P IC DY18 7 11 7 13 DY19 DY16 DY 12 DY9 DY12 11 12 13 DY 9 6 12 6 14 DY17 10 14 DY14 9 15 DY 7 5 13 DY 10 DY7 5 15 DY10 DY15 DY12 8 16 DY 5 4 14 DY 8 4 16 DY5 DY8 DY13 7 17 DY10 17 3 15 DY 6 3 DY 3 DY3 2 18 DY6 DY11 6 18 DY8 2 16 1 19 DY 1 1 17 DY 4 DY1 DY4 DY9 5 19 DY6 K DY 2 K 4 DY2 DY7 20 3 21 DY4 SHORT PIN DY5 2 22 SHORT PIN 1 24 23 DY2 DY3 IC DY1 K IC TPMHA0236EA TPMHA0243EC TPMHA0264EA

e R5924 r R6504 R5542 Typical Gain Magnetic Fields 52 ± 1 64 ± 1 FACEPLATE 39 MIN. FACEPLATE 51 MIN. TPMHA0249EA 101 2000 V PHOTO- PHOTOCATHODE CATHODE 2 2 ± ±

50 HA COATING 0 HA COATING 55 10 45 deg.

10-1 30 deg. SEMIFLEXIBLE GAIN

SEMIFLEXIBLE 13 MAX.

LEADS 0.7 13 MAX. LEADS 0.7 θ 0 deg. 31 38 10-2

DY18 DY16 DY18 DY16 Tesla DY14 DY14 P 14 15 DY12 P 14 DY19 16 15 16 DY12 11 17 DY10 DY19 11 10 17 DY10 DY17 18 DY8 10 18 9 DY17 DY8 -3 19 9 19 10 DY15 8 20 DY6 DY15 8 20 DY6 7 21 0 0.25 0.50 0.75 1.0 1.25 1.5 DY13 DY4 7 21 6 22 DY13 DY4 DY2 6 22 DY11 5 DY2 4 DY11 5 DY9 3 4 DY7 2 1 26 DY9 3 DY7 2 1 26 DY5 DY3 DY1 K Tesla DY5 DY3 DY1 K Bottom View TPMHA0337EA Bottom View TPMHA0336EA 56 57 Position-Sensitive Photomultiplier Tubes (at 25 °C)

A Spectral Response F Maximum Ratings H Cathode Sensitivity Cathode Sensitivity L Anode Characteristics R A No. of Effective Dynode J Blue K Anode to Anode Sensitivity Anode Dark B Peak Anode Photocathode Luminous Time Response Out- Structure Anode to Average Sensitivity Red / Radiant Cathode Current Curve Range Wave- or Area Luminous Gain (After 30 min.) Rise Electron Type No. Remarks line Cathode Anode Index White Typ. Supply Radiant Transit Notes Type No. Code length Anode Marixes Min. Typ. Typ. Typ. Time No. No. of Voltage Current (CS 5-58) Ratio Voltage Min. Typ. Typ. Max. Time Typ. Typ. Stages Typ. Typ. (mA/W) (nm) (nm) (mm) (Vdc) (mA) (µ A/lm) (µ A/lm) (Vdc) (A/rm) (A/rm) (A/W) (nA) (nA) (ns) (ns) Position-Sensitive Photomultiplier Tubes

R2486-02 Cross-wire anode type, 76 mm dia. φ q 9.0 72 1250 #9 5.0 8.0 7.2 × 103 × 5 20 R2486-02 envelope 16(X) + 16(Y) 50 CM/12 1300 0.1 50 80 – 1 10 50 5.5 17 Cross-wire anode type, 78 mm × R2487-02 3 5 78 mm square envelope 400K 300 to 650 420 18(X) + 16(Y) 60(X) × 55(Y) w CM/12 1300 0.1 40 80 9.0 – 72 1250 #9 3.0 8.0 7.2 × 10 1 × 10 20 80 5.5 17 R2487-02 Cross-wire anode type, 130 mm R3292-02 #9 × 3 5 R3292-02 dia. envelope 28(X) + 28(Y) φ100 e CM/12 1300 0.1 50 80 9.0 – 72 1250 5.0 8.0 7.2 10 1 × 10 40 150 6.0 20

(Unit: mm)

q R2486-02 e R3292-02 14 12 13 1 2 3 4 5 6 7 8 9 10 11 16 15 26 1 2 3 4 5 24 25 28 27 X X X X X X X X X X X X X X X X X X X X X X X X X EACH RESISTOR : 1 kΩ X 132 ± 3 Y28 YD Y27 Y16 YD 100 MIN. Y26 Y15 Y25 76 ± 1 Y14 Y24 Y13 Y12 50 MIN. Y11 PHOTO- Y10 Y9 CATHODE Y8 Y5 Y7 Y4 PHOTO- Y6 Y3 CATHODE Y5 Y2 4 2 2 Y Y1 YC ±

± Y3

Y2 3 ± 55 Y1 YC 113 3.0

± XB 133 1 86.2 XB ± HA COATING XA XA 20 C3 C3

11.2 R DY12 DY12 2R 2R 2R 1R DY11 SIGNAL OUTPUT DY11 2R 2R 2R 1 DY10 : 0.8D COAXIAL CABLES DY10 ± 2R SIGNAL OUTPUT DY9 C2

: 0.8D COAXIAL CABLES 20 2R DY9 2R C2 DY8 -H.V 2R 2R DY8 DY7 1R : 180 kΩ 1/2 W 2R Ω : RG-174/U -H.V DY6 1R : 180 k DY7 2R 2R : 360 kΩ 1/2 W 2R 2R : 360 kΩ 2R : RG-174/U DY5 DY6 C1 : 0.002 µF/2k V 2R C1 : 0.002 µF/2 kV µ DY4 2R C2 : 0.01 F/500 V 2R C2 : 0.01 µF/500 V DY5 µ DY3 2R C3 : 0.01 F/500 V 2R C3 : 0.01 µF/500 V DY2 DY4 2R 1 DY3 2R DY 2R K 1R C1 RG174/U DY2 HV Ω IN DY1 2R C1 10 k Focus 1R 10 kΩ RG174/U K HV TPMHA0162EE TPMHA0088ED TPMHA0160ED IN TPMHC0086ED

w R2487-02 R3292-02 Position Signal Linearity

Ω EACH RESISTOR : 1 k TPMHB0449EA 14 1 2 3 4 5 6 7 8 9 10 11 12 13 16 17 18 15 X X X X X X X X X X X X X X X X X X Y16 YD Y15 Y14 78 ± 1 × 78 ± 1 Y13 YC Y12 Y11 60(X) × 55(Y) MIN. Y10 Y9 XB Y8 100 100 Y7 Y6 Y5 XA PHOTOCATHODE Y4 80 80 2 Y3 ± Y2 3 ± 70 Y1 60 60 Ω HA COATING 101.2 C3

1 D ± 40 40 DY12

20 2R 1R DY11 C 2R 2R DY10 RELATIVE POSITION SIGNAL 11.2 RELATIVE POSITION SIGNAL DY9 2R 2R C2 20 20 SIGNAL OUTPUT DY8 : 0.8D COAXIAL CABLES DY7 2R 2R 1R : 180 kΩ 1/2 W DY6 2R : 360 kΩ 1/2 W -H.V DY5 2R 0 0 2R C1 : 0.002 µF/2 kV : RG-174/U DY4 µ A C2 : 0.01 F/500 V 10 20 30 40 50 60 70 80 90 100 110 120 10 20 30 40 50 60 70 80 90 100 110 120 DY3 2R µ 2R C3 : 0.01 F/500 V DY2 DY1 2R Y-AXIS (mm) 1R X-AXIS (mm) Focus RG174/U 1R C1 K 1R HV IN 10 kΩ TPMHA0161EF TPMHC0087ED 58 59 Microchannel Plate-Photomultiplier Tubes (MCP-PMTs) (at 25 °C) A Spectral Response CDE Maximum Ratings H Terminals Cathode Sensitivity Anode Characteristics N A B Peak Anode Current K Luminous Anode to Anode Anode Dark Time Response Photo- Out- No. of Supply Range Wave- Window -HV Signal Quantum Cathode Sensitivity Current Type No. Type No. Remarks cathode line MCP Voltage Gain Rise Time Electron Curve Material Continous Pulsed Input Output Efficiency Supply Luminous TTS length Material Stage Min. Typ. Typ. Typ. Transit Code No. Peak Voltage Typ. Typ. Max. Time Typ. (nm) (nm) (Vdc) (nA) (mA) (%) (µ A/lm) (µ A/lm) (Vdc) (A/lm) (nA) (nA) (ns) (ns) (ps) Standard Types (Effective Photocathode Area: 11 mm Dia.)

R3809U-50For UV to near IR range 500S 160 to 850 430 MA Q q 20 100 150 30 – 10 R3809U-50

R3809U-51For UV to near IR range R3809U-51 (Extended red multialkali) 501S 160 to 910 600 EMA Q q 8.3 240 350 70 – 10 R3809U-52 R3809U-52 For UV to visible range 403K 160 to 650 400 BA Q q 20 20 50 10 – 0.5 × 5 R3809U-57 2 -3400 100 350 SHV-R SMA-R -3000 2 10 0.15 0.55 25 R3809U-57 For UV range 201M 115 to 320 230 Cs-Te MgF2 q 11 – – – – 0.1 R3809U-58 R3809U-58 For UV to near IR range 500M 115 to 850 430 MA MgF2 q 20 100 150 30 – 10 R3809U-59 R3809U-59 For visible to IR range 700M 400 to 1200 800 Ag-O-Cs K q 0.25 12 25 5 – 10 Gated Type (Effective Photocathode Area: 10 mm Dia.) High-speed gate operation of less – R5916U-50than 5 ns 500S 160 to 850 430 MA Q w 15 100 150 30 10 R5916U-50

R5916U-51High-speed gate operation of less × 5 – R5916U-51 than 5 ns 501S 160 to 910 600 EMA Q w 2 -3400 100 350 SHV-R SMA-R 7.6 200 300 -3000 60 2 10 10 0.18 1.0 90 R5916U-52High-speed gate operation of less R5916U-52 than 5 ns 403K 160 to 650 400 BA Q w 15 20 45 9 – 0.5

To improve the S/N ratio in low light level detection, an exclusive cooler unit (C4878/E3059-500) for R3809U MCP-PMT is available. The R5916U has a series of types in the same suffixes as R3809U series. But an exclusive cooler unit shall be made upon custom order only. High speed amplifier C5594 series (Gain: 36 dB Typ., Frequency Bandwidth: 50 kHz to 1.5 GHz) are avairable.

(Unit: mm)

q R3809U-50 Series w R5916U-50 Series

70.2 ± 0.3 EFFECTIVE 71.5 ± 0.3 EFFECTIVE PHOTOCATHODE ± ± WINDOW 53.8 0.3 PHOTOCATHODE 52.5 0.1 DIAMETER SHV-R CONNECTOR DIAMETER WINDOW -H.V INPUT FACE PLATE ± 10MIN. 3.0 0.2 -HV INPUT 11.0MIN. FACE PLATE 3.0 ± 0.2 SHV-R CONNECTOR 0.1 ± 13.7 19 0.3 ± 0.1

± SMA-R CONNECTOR 7 ANODE OUTPUT 55.0 17.5 45.0 SMA-R CONNECTOR 10 MIN. 11 MIN. GATE PULSE INPUT PHOTOCATHODE 3.2 ± 0.1 7.0 ± 0.2 4.6 ± 0.1 7.9

ANODE OUTPUT PHOTOCATHODE SMA-R CONNECTOR TPMHA0348EC

GATE TPMHA0352EB CATHODE MCP ANODE MCP ANODE OUTPUT SMA-R K P SIGNAL OUTPUT 100 kΩ 450 pF SMA-R 330 pF 33 kΩ 12 MΩ 24 MΩ 6 MΩ 12 MΩ 24 MΩ 6 MΩ 330 pF 1000 pF 1000 pF 330 pF 330 pF

1000 pF 1000 pF 900 pF 50 Ω

GND10 kΩ GND

-HV SHV-R -HV GATE SIGNAL TPMHC0089EC SHV-R INPUT SMA-R TPMHC0090ED 60 61 Metal Package Photomultiplier Tubes (at 25 °C)

A Spectral Response C D EF G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode Anode to B Socket J Luminous Blue K Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window Sensitivity Electron Type No. Remarks Range Wave- cathode line Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code Material Min. Typ. Index Transit Type No. length Material No. No. of Socket Voltage Current Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Max. Time Stages Assembly Typ. Typ. µ µ Typ. (mA/W) (A/lm) (A/lm) Typ. (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (Vdc) (A/W) (nA) (nA) (ns) (ns) R7400U Series

q ■ ›6 o × 4 × 5 Photon counting type R7400U For visible range 400K 300 to 650 420 BA K MC/8 E678-12M / 1000 0.1 40 70 8.0 – 62 800 10 50 4.3 10 7.0 10 0.2 2 0.78 5.4 : R7400P R7400U

Multialkali photocathode for visible q ■ ›6 o × 4 × 5 Photon counting type R7400U-01to near IR range – 300 to 850 400 MA K MC/8 E678-12M / 1000 0.1 80 150 – 200 60 800 15 75 3.0 10 5.0 10 0.4 4 0.78 5.4 : R7400P-01 R7400U-01

Multialkali photocathode for visible 300 to 880 q ■ ›6 o × 4 × 5 R7400U-02 R7400U-02to near IR range – 500 MA K MC/8 E678-12M / 1000 0.1 200 250 – 250 58 800 25 125 2.9 10 5.0 10 2.0 20 0.78 5.4 R7400U-03 185 to 650 q ■ ›6 o × 4 × 5 Photon counting type R7400U-03For UV to visible range 400U 420 BA U MC/8 E678-12M / 1000 0.1 40 70 8.0 – 62 800 10 50 4.3 10 7.0 10 0.2 2 0.78 5.4 : R7400P-03 R7400U-04 Multialkali photocathode for UV to ■ Photon counting type R7400U-04 185 to 850 q ›6 o × 4 × 5 near IR range – 400 MA U MC/8 E678-12M / 1000 0.1 80 150 – 200 60 800 15 75 3.0 10 5.0 10 0.4 4 0.78 5.4 : R7400P-04 R7400U-06 160 to 650 w ■ ›6 o × 4 × 5 Photon counting type R7400U-06For UV to visible range 400S 420 BA Q MC/8 E678-12M / 1000 0.1 40 70 8.0 – 62 800 10 50 4.3 10 7.0 10 0.2 2 0.78 5.4 : R7400P-06 R7400U-09 160 to 320 R7400U-09Solar blind – 240 Cs-Te Q w MC/8 E678-12M■/›6 1000 0.1 – – – – 22b 800 o – – 1100b 5.0 × 104 0.025 0.5 0.78 5.4 300 to 650 e ■ ›6 o × 4 × 5 Photon counting type R7401 With lens 400K 420 BA K MC/8 E678-12M / 1000 0.1 40 70 8.0 – 62 800 10 50 4.3 10 7.0 10 0.2 2 0.78 5.4 : R7401P R7401 300 to 850 e ■ ›6 o × 4 × 5 Photon counting type R7402 R7402 With lens – 400 MA K MC/8 E678-12M / 1000 0.1 80 150 – 200 60 800 15 75 3.0 10 5.0 10 0.4 4 0.78 5.4 : R7402P

(Unit: mm) q R7400U, -01, -02, -03, -04 w R7400U-06, -09 e R7401, R7402

INSULATION COVER (Polyoxymethylene) INSULATION COVER (Polyoxymethylene) 19.0 ± 0.5 ± ± 12.8 ± 0.5 4.0 ± 0.3 11.5 0.4 4.0 0.3 11.5 ± 0.4 4.0 ± 0.3 ± ± GUIDE MARK 0.5 ± 0.2 5 ± 1 0.3 0.2 5 1 5±1 SHORT PIN SHORT PIN GUIDE MARK SHORT PIN 12- 0.45 GUIDE MARK 0.3 ± 0.3

± 12- 0.45 12- 0.45 5.4 SR 0.4

0.3 7 0.3 ± ± ± 5.4 0.4 0.4 0.4 5.1 0.4 ± ± ± ± 10.2 5.1 5.4 15.9 10.2 5.1 14.0 10.2 11.0 15.9 WINDOW 15.9 WINDOW 9.4

PHOTOCATHODE 5.1 8 MIN. PHOTOCATHODE 5.1 PHOTOCATHODE 5.1 8 MIN. 8 MIN. 10.2 10.2 10.2 Side View Bottom View Side View Bottom View Side View Bottom View SHORT PIN DY3 DY3 DY5 DY3 SHORT PIN DY5 (IC) 2 SHORT PIN DY5 (IC) 2 1 3 (IC) 2 1 3 K DY7 1 3 K DY7 12 4 K DY7 12 4 12 4 DY1 11 5 P DY1 11 5 P DY1 11 5 P 10 6 10 6 DY2 SHORT PIN 10 6 DY2 SHORT PIN 9 7 DY2 SHORT PIN 9 7 (IC) 8 (IC) 9 7 8 8 (IC) DY4 DY8 DY4 DY8 DY4 DY8 DY6 IC: Internal Connection DY6 IC: Internal Connection DY6 IC: Internal Connection (Do not use) (Do not use) (Do not use)

TPMHA0411EB TPMHA0410EB TPMHA0415EB 62 63 Metal Package Photomultiplier Tubes (at 25 °C)

A Spectral Response C D EF G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode Anode to B Socket J Luminous Blue K Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window Sensitivity Electron Type No. Remarks Range Wave- cathode line Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Code Material Min. Typ. Index Transit Type No. length Material No. No. of Socket Voltage Current Typ. Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Max. Time Stages Assembly Typ. µ µ Typ. (mA/W) (A/lm) (A/lm) Typ. (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (Vdc) (A/W) (nA) (nA) (ns) (ns) R5900U Series

For visible range q ■ ›7 @3 × 6 R5900U Single anode BA K MC/10 E678-32B / 900 0.1 50 70 8.0 – 72 800 25 140 – 2.0 10 2 20 1.5 – R5900U For visible range w ■ × 6 R5900U-00-M42 × 2 Multianode 400K 300 to 650 420 BA K MC/10 E678-32B /›8 900 0.1 50 70 8.0 – 72 800 @4 25 140 – 2.0 10 0.5 – 1.2 – R5900U-00-M4

For visible range e – × 6 H6568 4 × 4 Multianode BA K MC/12 1000 0.01 – 70 8.0 – 72 800 #9 – 230 – 3.3 10 1 – 0.83 – H6568

q R5900U e H6568 K IC (Dy10) IC Dy1 Dy2 Dy3 Dy4 IC (Dy10) CUT (K) 30.0±0.5 25.7±0.5 ± 23.5MAX. 4.4 0.7 123456789 0.5

0.5 × IC IC 4 16 32 10 ± 18MIN. ± 1MAX. 2.54 PITCH ANODE OUTPUT IC 31 11 IC 4.5 PITCH COAXIAL CABLE P 30 12 IC 30.0 IC 29 13 IC 25.7 FILLED WITH

IC 28 14 IC ANODE1 OUTPUT ANODE2 OUTPUT ANODE15 OUTPUT ANODE16 OUTPUT IC 27 15 IC IC IC

12 26 16 2524 23 22 21 20 19 18 17 Top View 4MAX. 29- 0.45 30.0 ± 0.5

PHOTOCATHODE Dy9 Dy8 Dy7 Dy6 Dy5 Dy10 EFFECTIVE AREA 17.5 R31 INSULATION CUT (K) CUT (K) COVER IC (Dy10) R30 0.8 MAX. K : Photocathode R19 Dy : Dynode Top View Side View Bottom View R18 P : Anode PHOTOCATHODE P1P2 P15 P16 Ω CUT : Short Pin R16 R13 C3 R1 to R13: 220 k : Internal Connection Dy12 R14 to R16: 51 Ω IC Ω (Don't Use) 1 R15 R12 C2 R17: 1 M ± Dy11 R18 to R33: 100 kΩ TPMHA0278EG Basing Diagram R14 R11 C1 C1 to C3: 0.01 µF 45 POM CASE Dy10 R10 Dy9 w R5900U-00-M4 R9 Dy8 R8 Dy7 -HV R7 : RG-174/U (RED) Dy6 R6 30.0±0.5 Dy5 R5 23.5MAX. 4.4±0.7 25.7±0.5 450 ANODE OUTPUT Dy4

K IC (Dy10) IC Dy1 Dy2 Dy3 Dy4 IC (Dy10) CUT (K) R4 1 MAX. 2.54 PITCH : COAXIAL CABLE Dy3 18MIN. R3 Dy2 123456789 ANODE 0.5 R2 ± IC 32 10 IC INDICATION Dy1

12 P1 31 11 P2 F IC IC R1 30 12 K IC 29GUIDE 13 IC R15 -H.V IC 28 CORNER 14 IC RG-174/U (RED) P3 Side View 0.20 P4 27 15 IC 26 16 IC 2524 23 22 21 20 19 18 17 0.20 4MAX. 29- 0.45 TPMHA0335EB TPMHA0338ED

PHOTOCATHODE Dy9 Dy8 Dy7 Dy6 Dy5

INSULATION Dy10 CUT (K) COVER CUT (K) IC (Dy10) Top View Side View Bottom View K : Photocathode Dy : Dynode P : Anode CUT : Short Pin IC : Internal Connection (Don't Use) Basing Diagram TPMHA0297EG 64 65 Metal Package Photomultiplier Tubes (at 25 °C)

A Spectral Response C D EF G Maximum RatingsH Cathode Sensitivity Cathode Sensitivity L Anode Characteristics M A Dynode Anode to B Socket J Luminous Blue K Anode Sensitivity Anode Dark Time Response Peak Photo- Out- Structure Anode to Average Red / Radiant Cathode Current Curve Window Sensitivity Electron Type No. Remarks Range Wave- cathode line Cathode Anode White Typ. Supply Luminous Radiant Gain (After 30 min.) Rise Notes Type No. Code Material Min. Typ. Index Transit length Material No. No. of Socket Voltage Current Typ. Typ. Time (CS 5-58) Ratio Voltage Min. Typ. Typ. Max. Time Stages Assembly Typ. µ µ Typ. (mA/W) (A/lm) (A/lm) Typ. (nm) (nm) (Vdc) (mA) ( A/lm) ( A/lm) Typ. (Vdc) (A/W) (nA) (nA) (ns) (ns) R5900U Series

For visible range q ■ ›9 !3 × 6 R5900U-00-L1616 Linear Multianode 400K 300 to 650 420 BA K MC/10 E678-32B / 900 0.01 50 70 8.0 – 72 800 50 280 – 4.0 10 0.2 2 0.6 – R5900U-00-L16 R5900U-01-L16 * For visible to near IR range q ■ × 6 * 16 Linear Multianode – 300 to 850 420 MA K MC/10 E678-32B /›99 900 0.01 100 150 – 0.15 – 800 !3 50 150 – 1.0 10 1 10 0.6 – R5900U-00-C8 R5900U-01-L16 For visible range w ■ fi0 @8 × 5 – 4 + 4 Cross plate anode 400K 300 to 650 420 BA K MC/11 E678-32B / 900 0.1 50 70 8.0 – 72 800 – 50 – 7.0 10 2 1.4 – R5900U-00-C8

q R5900U -00 -L16, R5900U -01 -L16 w R5900U -00 -C8

CUT(Dy11) G Dy1 Dy3 Dy5 Dy7 Dy9 Dy11 CUT(G) 30.0±0.5 30.0±0.5 24MAX. 4.4±0.7 24MAX. 4.4±0.7 25.7±0.5 K PX1 25.7±0.5 2.54 PITCH 1MAX. 2.54 PITCH 22 1 MAX. 123456789 15.8 K Dy6P13P11 P9 P7 P5 Dy2 CUT(IC) EFFECTIVE Dy7 EFFECTIVE 32 10 AREA 31 11 Dy2 Dy9 AREA Dy4 PX2 123456789 30 12 Dy4 32 10 P3 Dy6 29 GUIDE 13 PY1 31 11

12 CORNER 12 NC P1 28 14

20.32 30 12 Dy8 27 15 PX3 P15 29 GUIDE 13 P2 28 CORNER 14 26 16 P16 NC Dy10 CUT(IC) 4MAX. 27 15 4MAX. 25 24 23 22 21 20 19 18 17 P14 26 16 Dy3 CUT(Dy11) 30- 0.45 25 24 23 22 21 20 19 18 17 21- 0.45 PX4 Dy10 5.5 0.5 PHOTOCATHODE Dy1 IC PHOTOCATHODE PY4 IC PY3 IC PY2 IC IC CUT(G) Dy8 P12 P10 P8 P6 P4 Dy5 K 18 2.75 INSULATION INSULATION PX1 COVER 16 COVER PX2 0.5 Side View Bottom View Basing Diagram Side View Bottom View

18 K : Photocathode Basing Diagram PX3

5.5 Dy : Dynode (Dy1-Dy11) 1.0 PITCH 0.8 PX4 P : Anode (PX1-PX4) 15.8 PY1 PY2 PY3 PY4 (PY1-PY4) K : Photocathode 2.75 IC : Internal Connection Dy : Dynode (Dy1-Dy10) PX-ANODE PY-ANODE (Do not use) P : Anode (P1-P16) Top View NC : No Connection

TPMHA0298EE TPMHA0356EC R5900U -00 -L16 Anode Uniformity R5900U -00 -C8 Uniformity

TPMHB0344EB TPMHB0345EB TPMHB0323EC SUPPLY VOLTAGE : -800 (V) SPOT DIAMETER : 100 (µm) 100 100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 [CH] PY2 100 PX3 PY3 80 PY1 80 PX1 PX2 PY4 80 PX4 60 60

60

40 40

40 RELATIVE OUTPUT (%) RELATIVE OUTPUT (%)

20 20

RELATIVE OUTPUT (%) RELATIVE OUTPUT 20

0 0 0203010 0203010 0 0 5 10 15 20 POSITION (mm) POSITION (mm)

SUPPLY VOLTAGE : -800 V POSITION (mm) SUPPLY VOLTAGE : -800 V LIGHT SOURCE : W-LAMP LIGHT SOURCE : W-LAMP SPOT DIAMETER : 3 mm SPOT DIAMETER : 3 mm 66 67 Photosensor Module (at 25 °C) (Unit: mm) Spectral Response q Radiant Anode Anode Supply Recommended Max. Max. H6779 Series at 420nm Dark Pulse Voltage Control Supply Output Peak Out- Current Rise Time Voltage Voltage Type No. Range Wavelength line Configuration λ (at +0.8 V) (at +0.8 V) (at +0.8 V) Range p No. 50 ± 0.5 Pin Connection (nm) (nm) (Note1) (Note2) (ns) (Vdc) (V) (Vdc) (Note 3) 14 ± 0.2 12.7 5.08 17.78 5.08

q NC 123 12.5 w Vref (+1.2 V) 0.5 0.2 ± ± e Vcontrol (0 V to+1.0 V)

H6779 300 to 650 43 0.2 15.24 r 14 8 76 54 Vcc (+15 V) 25 t GND H6779-01 300 to 820 30 0.4 y SIGNAL GND 11 4-M2 DEPTH: 4 u ANODE OUT Bottom View i NC * H6779-02 300 to 880 17 2.0 PC-board EFFECTIVE AREA 8 +11.5 to +15.5 (NC : NO CONNECTION) 420 q 0.78 +0.25 to +0.95 +18 100 Top View H6779-03 185 to 650 43 0.2 mounting type 0.2

± 10 0.2) ± 1.5 H6779-04 185 to 820 30 0.4 ("-06" TYPE: 0 WINDOW H6779-06 0.5 185 to 650 43 0.2 ± 18

H6780 300 to 650 43 0.2 1 ± 1 H6780-01 300 to 820 30 0.4 12 15.24 Side View TPMHA0197ED * H6780-02 300 to 880 17 2.0 420 w 0.78 +11.5 to +15.5 +0.25 to +0.95 +18 100 Cable output type H6780-03 185 to 650 43 0.2

H6780-04 185 to 820 30 0.4

H6780-06 185 to 650 43 0.2 w H6780 Series

H5784 300 to 650 43 ±3

H5784-01 300 to 820 30 ±3 22 ± 0.5 50 ± 0.5 450 ± 10 * H5784-02 300 to 880 17 ±3 Cable output type e ± ± ±0.25 to ±0.95 ±18 10 14 ± 0.2 1.5 ± 0.2 420 – 11.5 to 15.5 DC to 20 kHz H5784-03 185 to 650 43 ±3 ("-06" TYPE: 0 ± 0.2)

H5784-04 185 to 820 30 ±3 WINDOW VCC : AWG22 (RED,+15 V) H5784-06 ± GND : AWG22 (BLACK) 185 to 650 43 3 10 Vref : AWG22 (BLUE,+1.2 V) µ Vcontrol : AWG22 (WHITE,0 V to+1.0 V) Note1: H6779/H6780 series ... ( A/nW) H5784 series ... (V/nW) There are the other types of much lower current consumption modules which are H5773 and ANODE OUT : RG-174/U Note2: H6779/H6780 series ... (nA) H5784 series ... Output Offset (mV) H5783 series. EFFECTIVE AREA 8 Note3: H6779/H6780 series ... (µA) H5784 series ... (V) When the system with the photosensor will require the current consumption low, H5773 and H5783 series are suitable modules, although these types have rather higher ripple noise (current) 4-M2 DEPTH: 4 and longer settling time than new series. Top View Side View

The H6779 / H6780 / H5784 series are light sensor modules including a compact photomultiplier tube (Metal Package PMT) and operating TPMHA0198ED power supply. The H6779 series are on-board types which facilitates mounting directly on a and H6780 series have a cable output. The H5784 series have a low noise amplifier with a cable output. Optical Fiber Adapter E5776(FC type) and Exclusive Power Supply C7169 (±15 V, Vcont output and Vcont display) are available as options.

H6779/H6780/H5784 Series Typical Spectral Response e H5784 Series

TPMHB0443EA TPMHB0444EA CONTROL VOLTAGE: +0.8V CONTROL VOLTAGE: +0.8V 100 102

-06TYPE H6779/H6780/H5784 -04 TYPE 22 ± 0.5 60 ± 0.5 450 ± 10 H6779 101 H6780 14 ± 0.2 1.5 ± 0.2 10 H5784 ("-06" TYPE: 0 ± 0.2)

-01TYPE 0 10 Vcc : AWG22 (RED,+15 V) WINDOW Vee : AWG22 (GREEN,-15 V) -03TYPE GND : AWG22 (BLACK) A/nW for H6779/H6780SERIES) 10 µ A/nW for H6779/H6780SERIES) ( (V/nW for H5784SERIES) Vref : AWG22 (BLUE,+1.2 V) µ ( (V/nW for H5784SERIES) 1 Vcontrol : AWG22 (WHITE,0 V to+1.0 V) 10-1 ANODE OUT : RG-174/U EFFECTIVE AREA 8 ANODE RADIANT SENSITIVITY ANODE RADIANT SENSITIVITY ANODE RADIANT 4-M2 DEPTH: 4 Top View Side View 0.1 10-2 100200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 900 TPMHA0288EC

WAVELENGTH (nm) WAVELENGTH (nm) 68 69 Gain (For tubes not listed here, please consult our sales office) Side-On Types Head-On Types (10 mm - 25 mm Dia.) Head-On Types (51 mm Dia.) Head-On Types (76 mm Dia.) Metal Package PMT 108 108 108 108 1P21 R1878 R1828-01

R928 R5070 R6091 R6350 R6355 7 107 R943-02 R5496 107 R1307 7 10 10 R6351 R6357 H6568 R7400U R3550 R1635

6 106 106 6 10 R6231 R6233 10 R5900U

R3234-01 R3478 5 105 R464 105 5 10 GAIN 10 GAIN

GAIN R2083 GAIN R636-10

104 104 104 104

R329-02 3 103 103 3 10 10 R632-01 R972 R1081

1259 R 102 102 102 102 500 700 1000 1500 2000 3000 500 700 1000 1500 2000 3000 250 300 500 700 1000 1500 2000 500 700 1000 1500 2000 3000 SUPPLY VOLTAGE (V) SUPPP Y VOLTAGE (V) SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V)

TPMSB0079EC TPMHB0198EE TPMHB0201EC TPMHB0202ED

Head-On Types (28 mm Dia.) Head-On Types (38 mm Dia.) Head-On Types (127 mm Dia.) Special Types Hemispherical Types 8 8 108 10 10 109 R3998-02

R6834, R6836, R374 R6427 R980, R1387 R1250 7 7 107 10 10 108 R3886, R1705 R1548

R3600-02 6 6 106 R5912 10 10 R580 107

R316-02 R5946 R6835

5 5 105 10 10 6 10 GAIN GAIN GAIN

GAIN R6234 R877 R6095 R1767 R1513 R6235 R6236 4 R6237 104 104 10 R2228, R5929 105 R5505

R5924, R6504, R5542

3 3 3 10 10 10 104

2 2 2 10 10 103 10 500 700 1000 1500 2000 3000 500 700 1000 1500 2000 3000 500 700 1000 1500 2000 3000 500 700 1000 1500 2000 3000

SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V)

TPMHB0199EC TPMHB0200EC TPMHB0203ED TPMOB0075ED 70 71 Voltage Distribution Ratio Replacement Information The characteristic values tabulated in the catalog for the individual tube types are measured with the voltage-divider networks having the * : The same dimensional outline, base connection and electric characteristics. voltage distribution ratio shown below. ** : The similar electric characteristics and the same dimensional outline and base connection. *** : The similar electric but different dimensional outline and/or different base sonnection.

Distribution Ratio Number of Voltage Distribution Ratio ETL Hamamatsu PHOTONIS Hamamatsu Codes Stage K : Photocathode Dy : Dynode P : Anode G : Grid F : Focus BURLE Hamamatsu

8 K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Acc Dy7 Dy8 P Side-On Types Side-On Types q 2—211111—11 1P21 1P21* R105** R105UH** 9780B 1P28** 931A** 1P21** XP1911 R1166** R1450* R3478*** w 11111111—11 1P28 1P28* 9781B 1P28** R212** XP1918 R2076*** R762** 1P28/V1 R212* 1P28** 9781R 1P28A** R3788** XP2012B, XP2072B R580** e 1.3 4.8 1.2 1.8 1 1 1 1 0.5 3 2.5 1P28A 1P28A* 9783B R106** R106UH** R4332** XP2013B R1387*** r 3 — 1.5 1 1 1 1 1 — 1 1 1P28A/V1 R372** 9785B R446* XP2015B R1767*** t 3 — 1.5 1.5 1 1 1 1 — 1 1 1P28B R1516* 9785QB R456* XP2017B R2066*** y 7 — 1 1.5 1 1 1 1 — 1 1 4473 R372** XP2020 R1828-01* u 4011.41111—11 4526 R1923* Head-On Types XP2020/Q R2059* i 22111111—11 4832 R636-10*** 9078B R1166** XP2050 R877*** o 1—111111—10.5 4840 R446* 9082B R1450** XP2052B R980** 931A, 931VA 931A* 9102KB, 9902KB 9903KB R580** XP2202B R2154-02** 9KG1 G2 G3 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P 931B 931B* R105** 9110BFL R1288** XP2203B R3256** !0 1———111111111 C31004, C31004A R406* 9111B, 9112B R1924** XP2206B R4607-01*** !1 31——11111.51111 9113B R1925** XP2262B R329-02*** !2 5030111111111 Head-On Types 9124B, 9125B, 9128B R6095** R6094** XP2282B R2083*** 10 K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P 4501/V3 R331-05* 9135B R5800*** XP2312B R6091*** !3 1—1111111111 4516 R1166*** R1450*** R3478*** 9207B R4607-01*** XP2802 R1166*** !4 111111111111 4856 R2154-02*** 9214KB R1828-01*** XP2971, XP2972 R6427** !5 1.5—1111111111 4900 R1307*** 9250KB, 9257KB, 9266KB R2154-02** XP2978 R7057** 4903 R1387*** 9330KB, 9390KB R877** XP3462B R6091*** !6 2—1111111111 5819 R2154-02*** 9353B R5912*** XP4500B R1584*** !7 2 — 1 1.5 1 1 1 1 1 1 1 0.75 6199 R980*** 9524B, 9766B, 9924B R6095** XP4512B R1250*** !8 3—1111111111 6342A R2154-02*** 9530KB, 9791KB R877*** !9 3—11.511111111 6342A/V1 R2154-02*** 9558B R375*** @0 3—1.5111111111 6655A R2154-02*** 9659B R669*** @1 4—11.511111111 8575 R329-02** 9734B R6095*** @2 1.3 4.8 1.2 1.8 1 1 1 1 1 1.5 3 2.5 (Note 2) 8644 R1617*** 9758KB R1307*** @3 1.5 — 1.5 1.5 1 1 1 1 1 1 1 0.5 8850 R329*** 9789B, 9844B R464*** C31000AJ4 R4607-01*** 9792KB R877*** @4 1.5 — 1.5 1.5 1 1 1 1 1 1 1 1 C31000AP4 R4607-01*** 9798B R374** K Dy1 F2 F1 F3 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P C31000AJ-1755 R4607-01*** 9807KB, 9813KB R1828-01*** @5 11.3 0 0.6 0 3.4 5 3.33 1.67 1 11111 C31000AP-1755 R4607-01*** 9814B R329-02*** 11 K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 P C31000M R2256*** 9815B R5496*** @6 1—11111111111 C31016G4 R1288*** 9820QB R331*** @7 8 0.05 11111111111 C31016H5 R1288*** 9821B, 9921B R6091*** @8 0.51.521111111110.5 C31034 R943-02*** 9822B R6091*** C31034-02 R943-02*** 9823KB R1250** K F2 F1 F3 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 P C31034-06 R943-02*** 9826B R1450*** R3478*** @9 5 1 2 0.02 3 1 1 1 1 111111 C31034A R943-02*** 9828B R5929** 12 K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 P C31034A-02 R943-02*** 9829B, 9849B R331-05* #0 3—331111111125 C31034A-05 R943-02*** 9829QB, 9849QB R331* #1 11111111111111 S83006E R877*** 9865B R649*** #2 1.2 2.8 1.2 1.8 1 1 1 1 1 1 1.5 1.5 3 2.5 S83010E R980*** 9881B R1450*** R3478*** #3 2—111111111111 S83010EM1 R3886*** 9882B R1617*** #4 4011.41111111111 (Note 1) S83049F R1307** 9884B, 9887B R329-02*** S83050E R980*** 9893KB/350 R3234-01*** #5 402.51.51111111111 S83050EM1 R3886*** 9899B R331-05*** #6 1 3 1.2 1.8 1 1 1 1 1 1 1.5 1.5 3 2.5 S83054F R1306** 9972KB, 9973KB R1387** #7 401.21.81111111111 S83068E R6427*** #8 6011.41111111111 9661B 1P28* 931A** 1P21** #9 1—111111111111 14 K G1 G2 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 Dy13 Dy14 P $0 2.57.501.21.8111111111.51.532.5 15 K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 Dy13 Dy14 Dy15 P $1 2111111111111111 16 K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 Dy13 Dy14 Dy15 Dy16 P $2 21111111111111111 19 K Dy1 Dy2 Dy3 ...... Dy17 Dy18 Dy19 P $3 2111...... 1111 Note 1 : The shield pin should be connected to Dy5. 72 2 : Acc to be connected to Dy7 except R4998 73 Photomultiplier Tube Assemblies

Photomultiplier tube assemblies integrate a photomultiplier tube Built-in PMT Maximum Ratings and a D-type or DP-type socket assemby (see page 78 for socket Dimensions Type No. Diameter Photo-CD Window Supply Supply Voltage Divider Current assemblies) into a matching magnetic shields. The D-type photo- Type No. Gain (mm) (mm) Cathode Material Voltage (V) (V) (mA) multiplier tube assemblies require a high-voltage power supply, while the DP-type includes a DC-DC converter high-voltage H6410 51 R329-02 BA K 3.0 × 106 2000 -2700 0.67 φ60.0 × 200 power supply and can be operated by simply supplying +15 V. H6521 51 R2256-02 BA Q 3.0 × 106 2000 -2700 0.67 φ60.0 × 200

H6522 51 R5113-02 BA U 3.0 × 106 2000 -2700 0.67 φ60.0 × 200

H1949-51 51 R1828-01 BA K 2.0 × 107 2500 -3000 0.70 φ60.0 × 235

H3177-51 51 R2059 BA Q 2.0 × 107 2500 -3000 0.70 φ60.0 × 235

H2431-50 51 R2083 BA K 2.5 × 106 3000 -3500 0.61 φ60.0 × 200

H3378-50 51 R3377 BA Q 2.5 × 106 3000 -3500 0.61 φ60.0 × 200

H6614-01 51 R5924 BA K 1.0 × 107 2000 -2300 0.33 φ60.0 × 80

H6156-50 51 R5496 BA K 1.3 × 107 2500 -3000 0.71 φ60.0 × 215 ▲Photomultiplier Tube Assemblies H6559 76 R6091 BA K 1.0 × 107 2000 -2500 0.62 φ83.0 × 218

H6527 127 R1250 BA K 1.4 × 107 2000 -3000 1.02 φ142.0 × 360

D-Type PMT Assemblies (with a Head-on Type PMT) H6528 127 R1584 BA U 1.4 × 107 2000 -3000 1.02 φ142.0 × 360

Built-in PMT Maximum Ratings R3600-06 508 R3600-02 BA K 1.0 × 107 2000 +2500 0.44 φ508.0 × 695 CD Dimensions Type No. Diameter Photo- Window Supply Supply Voltage Bleeder Current Type No. Gain (mm) (mm) Cathode Material Voltage (V) (V) (mA)

H3164-10 10 R1635 BA K 1.1 × 106 1250 -1500 0.41 φ10.5 × 95

H3695-10 10 R2496 BA Q 1.1 × 106 1250 -1500 0.37 φ11.3 × 95

H3165-10 13 R647 BA K 1.0 × 106 1000 -1250 0.34 φ14.3 × 116

H6520 19 R1166 BA K 9.5 × 105 1000 -1250 0.33 φ23.5 × 130 DP-Type PMT Assemblies (with a Side-on Type PMT and Built-in HV Power Supply) H6524 19 R1450 BA K 1.7 × 106 1500 -1800 0.43 φ23.5 × 130 Maximum Input Power Supply 5 Power Supply H6152-01 25 R5505 BA K 5.0 × 10 2000 -2300 0.41 φ31.0 × 75 Input Voltage Range Current Output Voltage Dimensions Built-in PMT Output Voltage Type No. Range H6533 25 R4998 BA K 5.7 × 106 2250 -2500 0.36 φ31.0 × 120 Programming (V) (mA) (V) (mm) H7415 28 R6427 BA K 5.0 × 106 1500 -2000 0.41 φ33.0 × 130 H957-01 R212

× 6 φ × Resistance H7416 28 R7056 BA U 5.0 10 1500 -2000 0.41 33.0 130 H957-06 931B (0 kΩ to 10 kΩ) +15 ± 0.5 150 -400 to -900 32.0 dia. × 100 L × 6 φ × H7417 28 R7057 BA Q 2.0 10 1500 -2000 0.37 33.0 130 H957-08 R928 or Voltage (0 V to 4V) H3178-51 38 R580 BA K 1.1 × 106 1500 -1750 0.63 φ47.0 × 162 H957-15 H6153-01 38 R5946 BA K 1.1 × 106 2000 -2300 0.39 φ45.0 × 80 R3896 50 kΩ H7318 +15 ± 1 45 0 to -1250or 35.4 dia. × 113 L Voltage (0 V to 5 V)

74 75 ACCESSORIES FOR PHOTOMULTIPLIER TUBES E678 Series Sockets

60 E678-11N E678-11A E678-19E 50 60 E678-11U 24 E678-19F 50 18 (For JEDEC 4.3 49 5.5

No.B11-88 38

° 45 4 Base) 4 45 45 φ40 φ40 33

10.5 3.5 5 5 9.5 5 13 φ40 3 29 11 3 4 3 2 10.5 12 12 2 12 18 0.5

4 9.5 6.5

11 φ40 6.5 TACCA0202EA TACCA0203EA

TACCA0181EA TACCA0043EA TACCA0064EA

E678-19D E678-20A E678-12M E678-12A 47 E678-12L 35 12.5 40 28.6 2- 3.2 (For JEDEC 13 2.54 (For JEDEC 17 2-R4 2 20 ± No.B20-102 Base) 6.0 34

No.B12-43 Base) 27 360 9

13 6.7 (23.6)

58 18 32 1.83 2 52.5 3

2- 3.2 6 2 2 3.7 7 10.16 2 9.5 3.3 10.5 34 13 14 2 (8) 2.8 21 5 4.2 15 13 10 18 8

3.2 52

0.53 56 TACCA0163EA TACCA0003EA TACCA0164EA TACCA0009EB TACCA0047EA E678-21C E678-21A 24 φ19.8 E678-13A E678-14V E678-14C 51 51 18 44 19 19 (For JEDEC 35 No.B14-38 Base) 30 19.1

2- 2.2 11.6

R5 56.8

R5 56.8

φ62 2- 3.5 13 φ56 26 5 3 7 2.5 5 11 10 9 13 30 13 17 4 25 4 3.4 6 2 6.5 11 TACCA0005EA TACCA0200EA TACCA0004EA TACCA0066EA TACCA0011EA

E678-15B 60 E678-17A 44.5 50 E678-21D E678-32B 22.86 23.5 20.32 4.45 2.92 24 2.54 18 4 45 φ40

21.9 48 12.7 5 22.86 20.32 0.51 0.1 14 7.5 16.3

12.7 1.57 18.5 2 3.0 11.5 12

5 MATERIAL: Glass Epoxy

22.8 4.2 φ40 TACCA0201EA TACCA0046EB TACCA0054EB TACCA0094ED

76 77 Socket Assemblies (For further information, a detailed catalog is available.) Operating a photomultiplier tube requires a voltage-divider circuit (divider circuit). For easier handling and operation of photomulti- D-Type Socket Assemblies The D-type socket assemblies incorporate a socket and voltage- divider circuit. A high voltage power supply and a current/electric plier tubes, Hamamatsu provides a complete line of socket assem- SOCKET SIGNAL OUTPUT charge signal processing circuit are required. The following four blies which are carefully engineered to integrate a socket and opti- SIGNAL GND types are available according to the grounded electrode, supply mum voltage-divider circuit into a compact case. In addition, voltage polarity and output signal form. socket assemblies which further include a preamplifier or high-volt- POWER SUPPLY GND

age power supply are available. HIGH VOLTAGE INPUT PMT 1. Anode ground, DC output VOLTAGE DIVIDER CIRCUIT 2. Anode ground, DC/pulse output The socket assemblies are classified into three types by their func- (DIVIDER CIRCUIT) tions as described below. TACCC0001EB 3. Cathode ground, pulse output For Side-On Photomultiplier Tubes 4. Anode or cathode ground, DC/pulse output DA-Type Socket Assemblies (with built-in voltage divider and amplifier) Socket Applicable PMT Grounded Electrode/ Output SOCKET Assembly AMP The DA-type socket assemblies incorporate a current-to-voltage Code Diameter Supply Voltage Polarity Signal conversion amplifier in addition to a voltage-divider circuit. High Type No. ¡ LOW VOLTAGE INPUT voltage (for PMT) and low voltage (for amplifier) power supplies are E850 -1313 mm(1/2 ") Anode/- DC/Pulse SIGNAL OUTPUT required. Since the high impedance output of the photomultiplier ™ E717 -63 Anode/- DC/Pulse PMT tube is connected to the amplifier at a minimum distance, the prob- 28 mm(1-1/8 ") HIGH VOLTAGE INPUT lem of external noise induced in connecting cables can be elimi- £ -35 Anode/- ⋅ Cathode/+ DC/Pulse nated. Two families of DA-type socket assemblies are available: the C7246 series for a bandwidth from DC to 20 kHz and the C7247 For Head-On Photomultiplier Tubes Socket Socket VOLTAGE-DIVIDER CIRCUIT series from DC up to 5 MHz. Both families are designed for use Applicable PMT Grounded Electrode/ Output Applicable PMT Grounded Electrode/ Output Code Assembly Code Assembly with 28 mm (1-1/8 inch)diameter side-on and head-on photomulti- Diameter Supply Voltage Polarity Signa Diameter Supply Voltage Polarity Signal TACCC0002EC Type No. Type No. plier tubes. ¢ E1761 -04 Anode/- DC/Pulse ¤9 E1198 -23 Cathode/+ Pulse Type No. C7246 C7246-01 C7247 C7247-01 b -0510 mm(3/8 ") Anode/- DC/Pulse ¤0 -05 Anode/- DC/Pulse Applicable PMT 28 mm (1-1/8 ") dia. Head-on 28 mm (1-1/8 ") dia. Side-on 28 mm (1-1/8 ") dia. Head-on 28 mm (1-1/8 ") dia. Side-on § -21 Anode/- DC/Pulse ‹1 -07 Anode/- DC/Pulse

Max. Supply Voltage to Voltage Divider -1500 V dc -1500 V dc ¶ E849 -35 Anode/- DC/Pulse ‹2 -22 Anode/- DC/Pulse • -52 Anode/- DC/Pulse ‹3 E4512 -502 Anode/- DC/Pulse Supply Voltage to Amplifier ±12 V dc to 15 V dc ±12 V dc to 15 V dc 13 mm(1/2 ") ª -68 Anode/- DC/Pulse ‹4 E5859 -01 Anode/- DC/Pulse Current-to-Voltage Conversion Factor 0.3 V / µA 0.3 V / µA ⁄0 -90 Anode/- DC/Pulse ‹5 E5859 -05 Anode/- DC/Pulse µ µ Max. Input Signal Current DC 33 A 33 A ⁄1 E2253 -08 Cathode/+ Pulse ‹6 E2979 -50051 mm(2 ") Anode/- DC/Pulse (at -1000 V, 10 V output) Pulse 33 µA 33 µA ⁄2 -05 Anode/- DC/Pulse ‹7 E4512 -503[76 mm(3 ")] Cathode/+ Pulse [127 mm(5 ")] Max. Output Voltage (Unterminated) 10 V peak (20 kHz) 10 V peak (5 MHz) ⁄3 E974 -13 Anode/- DC/Pulse ‹8 -504 Cathode/+ Pulse ⁄4 -1419 mm(3/4 ") Cathode/+ Pulse ‹9 -505 Cathode/+ Pulse Frequency Bandwidth DC to 20 kHz DC to 5 MHz ⁄5 -17 Anode/- DC/Pulse ›0 E1435 -02 Anode/- DC/Pulse DP-Type Socket Assemblies (with built-in voltage divider and power supply) ⁄6 -18 Anode/- DC/Pulse ›1 E4229 -501 Anode/- DC/Pulse ⁄7 -22 Anode/- DC/Pulse ›2 E1458 -501 Anode/- DC/Pulse The DP-type socket assemblies feature a built-in voltage divider ⁄8 E2924 Anode/- DC/Pulse ›3 -502 Cathode/+ Pulse SOCKET HIGH VOLTAGE POWER SUPPLY and compact high-voltage power supply. By applying a +15 V sup- SIGNAL OUTPUT ply to the power supply, easy operation of a photomultiplier tube is ⁄9 -500 Anode/- DC/Pulse ›4 E6133 -0325 mm(1 ") For Anode/- DC/Pulse SIGNAL GND 25 mm(1 ") highly magnetic LOW VOLTAGE INPUT possible. As standard products, the C956 series assemblies are ¤0 -05 Cathode/+ Pulse PMT environments HIGH VOLTAGE CONTROL provided for use with 28 mm (1-1/8 inch) diameter side-on and ¤1 E2624 -500 Anode/- DC/Pulse head-on photomultiplier tubes. VOLTAGE DIVIDER POWER SUPPLY GND ¤2 E2624 Anode/- DC/Pulse ›5 E6132-0251 mm(2 ") For Anode/- DC/Pulse ¤3 -05 Cathode/+ Pulse highly magnetic TACCC0003EB environments ¤4 E990 -0728 mm(1-1/8 ") Anode/- DC/Pulse Type No. C6270 C956-07 ¤5 -08 Cathode/+ Pulse Metal Package Photomultiplier Tubes Applicable PMT 28 mm (1-1/8 ") dia. side-on 28 mm (1-1/8 ") dia. head-on ¤6 -28 Anode/- DC/Pulse Socket Grounded Electrode/ Output Code Assembly Input Voltage +(15 ± 1) V dc ¤7 E2183 -502 Cathode/+ Pulse Applicable PMT Supply Voltage Polarity 38 mm(1-1/2 ") Type No. Signal ¤8 -500 Anode/- DC/Pulse Input Current 45 mA Max. 140 mA Max. ›6 E5780 R7400U Anode/- DC/Pulse NOTE) Please consult our sales office when you use a photomultiplier tube in a ›7 E5996 R5900U Anode/- DC/Pulse Output Voltage Range 0 V dc to -1250 V dc Typ. -200 V dc to -1250 V dc Typ. vacuum. ›8 E7083 R5900U-00-M4 Anode/- DC/Pulse Input Regulation ±0.01 % Typ. at + (15 ± 1) V dc ±0.05 % Max. at + (15 ± 1) V dc ›9 E6736 R5900U-00-L16 Anode/- DC/Pulse Maximum PMT Signal Output at -1000 V 100 µA Typ. 15 µA Typ. fi0 E6669-01 R5900U-00-C8 Anode/- DC/Pulse

78 79 High-Voltage Power Supplies Thermoelectric Coolers (For more information, a detailed catalog is available.) The output of a photomultiplier tube is extremely sensitive to the applied The thermionic electron emission from a photocathode and dy- voltage. Even small variations in applied voltage greatly affect measure- nodes is a major factor that determines the dark current of the pho- ment accuracy. Thus a highly stable source of high voltage is required. tomultiplier tube. (See page 8.) Cooling the photomultiplier tube can (See page 8.) Hamamatsu regulated high-voltage power supplies are de- efficiently reduce the dark current and improve the S/N ratio, result- signed for precision measurement using a photomultiplier tube and manu- ing in an significant enhancement in the detection limit. Hamamatsu factured with careful consideration given to high stability and low ripple. To provides a variety of thermoelectric coolers specifically designed meet various needs, they are available in a wide range of configurations for photomultiplier tubes to meet various needs. and performances, including unit types for PC board mounting, bench-top types and a 5 kV output type for MCP-PMTs.

▲C4877 Type No. Applicable PMT Input Voltage (Vac) Cooling Temperature (°C)* Remarks

C659-70 Series 28 mm (1-1/8 ") Dia. Side-on 100/115/220 Approx. -15 ▲C3830 C659-50 Series 28 mm (1-1/8 "),38 mm (1-1/2 ") Dia. Head-on 100/115/220 Approx. -20

C4877 Series 38 mm (1-1/2 ") ,51 mm (2 ") Dia. Head-on 100/120/230 Approx. -30 Temperature controllable Output Voltage Range Maximum Output Dimensions (W × H × D) Type No. Input Voltage Weight (Vdc) Current (mA) (mm) C4878 Series MCP-PMT 100/120/230 Approx. -30 Temperature controllable * With +20 °C coolant. Socket assemblies and holders are sold separately. Unit Types

C4710 -240 to -1500 1 +15 V dc 65 × 27.5 × 45 105 g Magnetic Shield Cases

C4710-01 -240 to -1500 1 +12 V dc 65 × 27.5 × 45 105 g Photomultiplier tubes are generally very susceptible to magnetic × × C4710-02 -240 to -1500 1 +24 V dc 65 27.5 45 105 g fields. Even terrestrial magnetism will have a detrimental effect on C4710-50 +240 to +1500 1 +15 V dc 65 × 27.5 × 45 105 g the photomultiplier tube output. (See page 9.) Hamamatsu E989 series magnetic shield cases are designed to protect photomulti- C4710-51 +240 to +1500 1 +12 V dc 65 × 27.5 × 45 105 g plier tubes from magnetic field effects. Since the E989 series mag- C4710-52 +240 to +1500 1 +24 V dc 65 × 27.5 × 45 105 g netic shield cases are made of permalloy which has high perme- 5 C4900 0 to -1250 0.6 +15 V dc 46 × 24 × 12 31 g ability (about 10 ), the magnetic field strength within the shield case with respect to the external magnetic field strength (the reciprocal C4900-01 0 to -1250 0.5 +12 V dc 46 × 24 × 12 31 g of this is called shielding factor) can be greatly attenuated down to C4900-50 0 to +1250 0.6 +15 V dc 46 × 24 × 12 31 g 1/1 000 to 1/10 000, thus ensuring stable output from photomulti- plier tubes even operating in magnetic fields. C4900-51 0 to +1250 0.5 +12 V dc 46 × 24 × 12 31 g ▲ Magnetic Shield Cases

Applicable PMT Diameter Type No. Internal Diameter (mm) Thickness (mm) Length (mm) Weight (g) Bench-Top Types Side-on 13 mm (1/2 ") E989-10 14.5 0.5 47 ± 0.5 10 C3350 0 to ±3000 10 100/115/220/230 V ac 220 × 120 × 350 8 kg 28 mm (1-1/8 ") E989 33.6 ± 0.8 0.8 80 ± 166 C3360 0 to -5000 1 100-120/220-240 V ac 210 × 99 × 273 3.5 kg Head-on 10 mm (3/8 ") E989-28* 12 ± 0.5 0.5 48 ± 0.5 9 C3830 -200 to -1500/±5/±15 1/500/200 100/120/220/230 V ac 255 × 54 × 230 2.8 kg 13 mm (1/2 ") E989-09 16 ± 0.5 0.8 75 ± 0.5 28 C4720 +200 to +1500/±5/±15 1/500/200 100/115/220/240 V ac 255 × 54 × 230 2.8 kg 19 mm (3/4 ") E989-02 23 ± 0.5 0.8 95 ± 150

25 mm (1 ") E989-39 29 ± 0.5 0.8 48 ± 0.5 32

28 mm (1-1/8 ") E989-03 32 ± 0.5 0.8 120 ± 190

+1 38 mm (1-1/2 ") E989-04 44 -0 0.8 100 ± 1 102

+1 51 mm (2 ") E989-05 60 -0 0.8 130 ± 1 180

+1.5 76 mm (3 ") E989-15 80 -0 0.8 120 ± 1 200

127 mm (5 ") E989-26* 138 ± 1.5 0.8 170 ± 1 600 ∗ With mounting tabs. 80 81 Photon Counters and Related Products Photon Counting Modules

Recently, photon counting has become widely used as an effective technique for detecting very low light levels in various fields such as Photon Counting Heads biology, chemistry and medicine. As a leading manufacturer of photomultiplier tubes, Hamamatsu provides a variety of photon counters and related products. Our product line includes Photon Counter that allows time-resolved photometry and Photon Counting Units that integrate only essential functions into a compact case. Please feel free to contact Hamamatsu sales offices for further information. Photon H6180 ⋅ H6240 Series counting modules, photon counting head, photon counting unit and prescaler, are also available. The H6180 and H6240 series are compact photon counting heads compris- ing a low noise PMT, a high speed photon counting circuit, and a high volt- age power supply. The operation only requires connecting with a +5 Vdc power supply and a pulse counter. No discrimination level or high voltage adjustment are required of the user.

Photon Counter C5410 Series The C5410 is a time-resolved photon counter with a large-screen liquid crystal display (640 dots × 200 dots) enabling an instantaneous display of ▲ LEFT: H6240 the measured waveform as well as numerical count rates. Photon Counting Unit RIGHT: H6180-01 with optional mounting flange The C5410 also includes a high-voltage power supply, preamplifier and dis- criminator. High-precision photon counting can be performed by simply pre- C3866, C6465 paring a photomultiplier tube and D-type socket assembly (see page 79). The C3866 and C6465 convert the photoelectron pulses of the photomulti- plier tube into 5 V digital signals by the built-in amplifier/discriminator. Use of a high-speed electronic circuit permits light measurements with excellent linearity up to a maximum count rate of 107 s-1(cps).

▲ C5410 PMT and socket assembly will be sold separately as an option.

▲ Instantaneous display of the measured waveform.

▲ C3866

Photon Counting Board M7824 The photon counting board M7824 is designed for direct plug-in to the ISA bus slot in a PC (Windouws 95/98). Photon counting measurements over a wide dynamic range can be easily made by input of photoelectric pulses which are converted into a logic (TTL) signal. The counter applies a double-count method that allows time-resolved photon counting of high-speed optical phenomena with no dead time between gates. Simultaneous 2-channel measurements are also possible by using two M7824 boards.

▲ M7824

82 83 ELECTRON MULTIPLIER TUBES

Unit : mm Electron multipliers (also called ion multipliers) are specially de- Each type has Cu-BeO dynodes connected by built-in divider resis- e R596 r R595 signed for the detection and measurement of electrons, charged tors (1 MΩ per stage) and is supplied in an evacuated glass bulb. particles such as ions, VUV radiations and soft X-rays. Hamamatsu The first dynode can be replaced by a photocathode of Cs-I, K-Br, 10 10 electron multipliers have high gain and low noise, making them etc. for use in VUV photometry.

suitable for the detection of very small or low energy particles by In such applications as ICP-MASS where electron multipliers are 12 0.2 12 ± GRID 0.2 using the counting method. They are well suited for mass spectros- used in harsh atmosphere, use of the R5150 with superior environ- 4.2 GRID ± DY1 4.2 42.0 DY1 copy, field ion , and electron or VUV spectroscopy such mental resistance is recommended. Also, for TOF-MASS applica- DY2 42.0 DY2 as Auger spectroscopy, AES and ESCA. tions, use of the R2362 with mesh dynodes is recommended. 6.5

A Dynode Characteristics Anode Maximum Ratings to all J

Rise Anode to Anode to DY16 2

Other ± DY20 Out - SH Type. Radiation Supply Gain Time First Last Average Operating SH 2 Electrode GND 111 120 MAX.

GND ± Number Structure Material 130 MAX. No. line P P Opening Voltage Typ. Typ. Capaci- Dynode Dynode Anode Vacuum ANODE of 131 140 MAX.

SHIELD (SH) 150 MAX. tance Voltage Voltage Current Level ANODE 3- 3.5 DY2 Stages 7 PIN BASE DY2 SHIELD (SH) (mm) (Vdc) (ns) (Vdc) (µ A) GRID 3- 3.5 (pF) (Vdc) (Pa) GRID DY16 RESISTORS 50.0 ± 0.1 DY20 (1 MΩ, 16 PCS) 44 30 Head-On Types GND ANODE (P) 30 44 RESISTORS GND 50.0 ± 0.1 (1 MΩ, 20 PCS) 6 -4 R474 1 16 Box-and-grid Cu-BeO 8 × 6 2400 1 × 10 9.3 5.0 4000 350 10 133 × 10 SH DY1 SH ANODE (P) DY3 DY1 7 PIN BASE P DY3 P R515 2 16 Box-and-grid Cu-BeO 8 × 6 2400 1 × 106 9.3 4.0 4000 350 10 133 × 10-4 TEM A0007EC TEM A0008EC R596 3 16 Box-and-grid Cu-BeO 12 × 10 2400 1 × 106 10 9.0 4000 400 10 133 × 10-4 t R2362 y R5150-10 R595 4 20 Box-and-grid Cu-BeO 12 × 10 3000 4 × 107 12 9.0 5000 400 10 133 × 10-4

R2362 5 23 Mesh Cu-BeO 20 dia. 3450 5 × 105 3.5 23 4000 350 10 133 × 10-4 50.0 ± 0.1 44.0 ± 0.1 *R5150-10 6 16 Box-and-line Cu-BeO 8 dia. 2000 5 × 106 1.7 4.0 3500 300 10 133 × 10-4 EFFECTIVE AREA : 8

20 30 34

Unit : mm 3.2 ● Typical Spectral Response of Cu-BeO Used for Dynodes q R474 100 20 DY1 6 DY2 HAMAMATSU 66 8 26 3.2 60 MAX. 4.0

DY1 GND DY23 DY2 10 ANODE P DY2 DY1 2 ± 70 20 30 90 MAX.

QUANTUM EFFICIENCY (%) QUANTUM EFFICIENCY DY16 HIGH VOLTAGE SH GND P GND P TEM A0009EC TEM A0015EA

ANODE SHIELD (SH) RESISTORS (1 MΩ, 15 PCS) ANODE (P) DY2 1 20 40 60 80 100 120 140 160 17

WAVELENGTH (nm) P DY1 20 TEM A 0005EB TEM B0021EA ● Typical Current Amplification w R515 1010

20 6 109 8 26 ANODE 3.2 8 SHIELD (SH) 10 4.0

R595 DY1 107 DY2 2

HOLDER ± 79 106 86 MAX. R474, R515, R596, R4146 CURRENT AMPLIFICATION DY16 SH P 5 34 RESISTORS 10 Ω R2362 (1 M , 15 PCS) 39 MAX.

P DY2 4 10 ANODE (P)

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.55.0 21

APPLIED VOLTAGE (kV) DY1 TEM B0022EC TEM A0006EB 84 85 CAUTIONS AND WARRANTY TYPICAL PHOTOCATHODE SPECTRAL RESPONSE

WARNING Spectral Response Peak Wavelength Photocathode Window Materials Take sufficient care to avoid an electric shock hazard Curve Codes Range Radiant Q.E. PMT Examples Materials A high voltage used in photomultiplier tube operation Sensitivity The metal housing of the Metal Package PMT R5600 series is (nm) (nm) (nm) may present a shock hazard. Photomultiplier tubes HIGH connected to the photocathode (potential) so that it becomes a VOLTAGE should be installed and handled only by qualified per- high voltage potential when the product is operated at a nega- Semitransparent Photocathode sonnel that have been instructed in handling of high tive high voltage (anode grounded). K 100M Cs-I MgF2 115 to 200 140 130 R972, R1081, R6835 voltages. Designs of equipment utilizing these de- K 200M Cs-Te MgF2 115 to 320 240 240 R1080, R6836 vices should incorporate appropriate interlocks to 201M Cs-Te MgF2 115 to 320 220 220 R3809U-57 protect the operator and service personnel. K 200S Cs-Te Synthetic silica 160 to 320 240 240 R759, R821, R1893, R6834 201S Cs-Te Synthetic silica 160 to 320 240 220 R2078 K 400K Bialkali Borosilicate 300 to 650 420 390 R329-02, R331-05, R464, R5496, R1635, R647, R1166, R2486-02, R2154-02, R3998-02, R5800, R6427, R6091, R5924, R5946, R6095, R580, R1828-01, R5611-01, R4998, PRECAUTIONS FOR USE R1924, R3234-01, R7400U, R5900U 400U Bialkali UV 185 to 650 420 390 R7400U-03,R1584 K 400S Bialkali Synthetic silica 160 to 650 420 390 R2496, R7400U-06 ● Handle tubes with extreme care tube. For example, when fabricating the voltage-divider circuit, K 401KHigh temp. Borosilicate 300 to 650 375 360 R1281, R1288, R1705, R3991, R4177-01, R4607-01 Photomultiplier tubes have evacuated glass envelopes. Allow- solder the divider resistors to socket lugs while the tube is in- bialkali ing the glass to be scratched or to be subjected to shock can serted in the socket. K 402K Low noise bialkali Borosilicate 300 to 650 375 360 R2557, R2801, R3550 cause cracks. Extreme care should be taken in handling, espe- 403K Bialkali Synthetic Silica 160 to 650 400 420 R3809U-52, R5916U-52 cially for tubes with graded sealing of synthetic silica. ● Cooling of tubes 430U Bialkali UV 185 to 650 375 300 R2693 When cooling a photomultiplier tube, the photocathode section 500M Multialkali MgF2 115 to 850 430 360 R3809U-58 K ● Keep faceplate and base clean is usually cooled. However, if you suppose that the base is also 500K(S-20) Multialkali Borosilicate 300 to 850 420 360 R550, R649, R1387, R1513, R1617, R1878, R1894, R1925 K 500S Multialkali Synthetic silica 160 to 850 420 280 R375, R3809U-50, R5916U-50 Do not touch the faceplate and base with bare hands. Dirt and cooled down to -30 °C or below, please consult our sales office K 500U Multialkali UV 185 to 850 420 290 R374, R1463, R1464, R2368 fingerprints on the faceplate cause loss of transmittance and dirt in advance. 502K (Super S20) Multialkali Borosilicate 300 to 900 420 400 R5070, R5929 on the base may cause ohmic leakage. Should they become 501S Multialkali Synthetic silica 160 to 910 600 590 R3809U-51, R5916U-51 ● soiled, wipe it clean using alcohol. Helium permeation through silica bulb K 501K Multialkali Borosilicate 300 to 900 600 580 R669, R2066, R2228, R2257 Helium will permeate through the silica bulb, leading to an in- K 700K(S-1) Ag-O-Cs Borosilicate 400 to 1200 800 780 R316-02, R632-01, R1767, R5108 ● Do not expose to strong light crease in noise. Avoid operating or storing tubes in an environ- 700M Ag-O-Cs Borosilicate 400 to 1200 800 780 R3809U-59 Direct sunlight and other strong illumination may cause damage ment where helium is present. to the photocathode. They must not be allowed to strike the pho- Reflection mode Photocathode tocathode, even when the tube is not operated. K 150M Cs-I MgF2 115 to 195 130 120 R1259, R7511 Data and specifications listed in this catalog are subject to K 250S Cs-Te Fused silica 160 to 320 230 190 R6354,R7154 K ● Handling of tubes with a glass base change due to product improvement and other factors. 250M Cs-Te MgF2 115 to 320 200 190 R1220, R7311 K 350K(S-4) Sb-Cs Borosilicate 300 to 650 400 350 R105, 1P21, 931A A glass base (also called button stem) is less rugged than a Before specifying any of the types in your production K 350U(S-5) Sb-Cs UV 185 to 650 340 270 R212, R3810, R6350, 1P28 plastic base, so care should be taken in handling this type of equipment, please consult our sales office. K 350S(S-19) Sb-Cs Fused silica 160 to 650 340 210 R6351 453K Bialkali Borosilicate 300 to 650 400 360 931B 456U Low noise bialkali UV 185 to 680 400 300 R1527, R4220, R6353 452U Bialkali UV 185 to 750 420 220 R3788, R6352 558K Multialkali Borosilicate 300 to 800 530 510 R1923 WARRANTY 561U Multialkali UV 185 to 830 530 300 R6358 556U Multialkali UV 185 to 850 430 280 R4632 550U Multialkali UV 185 to 850 530 250 R3811, R6355 All Hamamatsu photomultiplier tubes and related products are D: No credit will be issued for any detector which in the judg- K 555U Multialkali UV 185 to 850 430 280 R3896 warranted to the original purchaser for a period of 12 months ment of Hamamatsu has been damaged, abused, modified 552U Multialkali UV 185 to 900 400 260 R2949 following the date of shipment. The warranty is limited to repair or whose serial number or type number have been obliter- K 562U Multialkali UV 185 to 900 400 260 R928 or replacement of any defective material due to defects in work- ated or defaced. 554U Multialkali UV 185 to 900 450 370 R1477-06 manship or materials used in manufacture. E: No detectors will be accepted for return unless permission K 650U GaAs(Cs) UV 185 to 930 300 to 800 300 R636-10 has been obtained from Hamamatsu in writing, the shipment K 650S GaAs (Cs) Synthetic silica 160 to 930 300 to 800 280 R943-02 A: Any claim for damage of shipment must be made directly to has been returned prepaid and insured, the detectors are 850U InGaAs(Cs) UV 185 to 1010 400 330 R2658 the delivering carrier within five days. packed in their original box and accompanied by the original K 851K InGaAs(Cs) Borosilicate 300 to 1040 400 350 R3310-02 B: Customers must inspect and test all detectors within 30 days data sheet furnished to the customer with the tube, and a full K : Spectral response curves are shown on page 88, 89 after shipment. Failure to accomplish said incoming inspec- written explanation of the reason for rejection of each detec- tion shall limit all claims to 75 % of invoice value. tor. C: No credit will be issued for broken detectors unless in the F: When products are used at a condition which exceeds the opinion of Hamamatsu the damage is due to a bulb crack or a specified maximum ratings or which could hardly be antici- crack in a graded seal traceable to a manufacturing defect. pated, Hamamatsu will not be the guarantor of the prod- ucts.

86 87 SEMITRANSPARENT PHOTOCATHODE SPECTRAL RESPONSE CHARACTERISTICSOPAQUE PHOTOCATHODE SPECTRAL RESPONSE CHARACTERISTICS NOTES TRANSMISSION MODE PHOTOCATHODE REFLECTION MODE PHOTOCATHODE A ∗ : Newly listed in this catalog. 100 100 80 80 B Refer to pages 88 and 89 for typical spectral response charts. 60 10 % 10 % 50 % QUANTUM 60 50 % QUANTUM C EFFICIENCY 5 % 5 % Photocathode materials 40 EFFICIENCY350S BA : Bialkali 40 LBA : Low dark current bialkali 25 % 400K HBA : High temperature bialkali 2.5 % 25 % 350K 2.5 % MA : Multialkali 20 20 EMA : Extended red multialkali

D 200S Window materials 10 1 % 10 MF : MgF2 8 ⋅ 8 1 % Q : Quartz (Fused Silica or Synthetic Silica) 401K 402K 250M K : Borosilicate glass 6 200M 6 350U U : UV glass 400S 0.5 % 250S 0.5 % 4 4 E Basing diagram 150M BASING DIAGRAM SYMBOLS 0.25 % 0.25 % All base diagrams show terminals viewed from the 2 2 base end of the tube. Short Index Pin DY : Dynode 1.0 1.0 Pin G(F) : Grid (Focusing Electrode) 100M 0.1 % 0.1 % ACC : Accelerating Electrode 0.8 K : Photocathode 0.8 P : Anode SH : Shield 0.6 Key 0.6 Flying IC : Internal Connection (Do not use) 0.4 0.4 Lead NC : No Connection (Do not use) F Dynode structure B : Box-and-grid 0.2 0.2 VB : Venetian blind CC : Circular-cage L : Linear-focused PHOTOCATHODE RADIANT SENSITIVITY (mA / W) SENSITIVITY RADIANT PHOTOCATHODE 0.1 PHOTOCATHODE RADIANT SENSITIVITY (mA / W) 0.1 B+L : Box and linear focused 100 200 300 400 500 600 700800 1000 1200 FM : Fine Mesh 100 200 300 400 500 600 700800 1000 1200 CM : Coarse Mesh MC : Metal Channel

TPMOB0077EC TPMOB0079EC G ★ : A socket will be supplied with the tube. WAVELENGTH (nm) WAVELENGTH (nm) ■ : Sockets may be available from electronics supply houses or our sales office. (See pages 76 and 77.) TRANSMISSION MODE PHOTOCATHODE 100 REFLECTION MODE PHOTOCATHODE H The maximum ambient temperature range is -80 °C to +50 °C except the following 80 10 % 100 tubes using a high temperature bialkali photocathode which withstands from -80 °C up to +175 °C. When a tube is operated below -30 °C see page 86, "PRECAUTIONS 60 50 % QUANTUM 80 10 % EFFICIENCY 5 % QUANTUM FOR USE". 500S 60 50% % 40 555U 5 500K 40EFFICIENCY Diameter Type No. Diameter Type No. 25 % 13 mm (1/2 ") R4177-01 38 mm (1-1/2 ") R1705 20 2.5 % % 25 2.5 % 19 mm (3/4 ") R1281,R3991 51 mm (2 ") R4607-01 20 25 mm (1 ") R1288 — — 500U 650S 10 562U 8 1 % 10 % J Averaged over any interval of 30 seconds maximum. 6 8 851K 1 0.5 % 6 K Measured at the peak wavelength. 4 % 4 0.5 L Refer to page 72 for voltage distribution ratios. 2 0.25 % 650U % M Anode characteristics are measured with the supply voltage and voltage distribution 0.25 ratio specified by Note L. 501K 2 1.0 N Anode characteristics are measured at the specified supply voltage on page 61. 0.1 % % 0.8 1.0 0.1 R Anode characteristics are measured with the specified anode-to-cathode supply voltage. 0.6 700K 0.8 0.6 a at 122 nm 0.4 b at 254 nm c at 852 nm 0.4 d Measured using a red filter Toshiba IR-D80A. e at 4 A/lm 0.2 f at 10 A/lm 0.2 g at 1000 A/lm h Dark counts per second s-1(cps) PHOTOCATHODE RADIANT SENSITIVITY (mA / W) SENSITIVITY RADIANT PHOTOCATHODE 0.1 j Dark counts per second s-1(cps) after one hour storage at -20 °C. k -1 100 200 300 400 500 600 700800 1000 1200 PHOTOCATHODE RADIANT SENSITIVITY (mA / W) 0.1 Background noise per minute m (cpm) 100 200 300 400 500 600 700800 1000 1200

WAVELENGTH (nm) TPMOB0078EC TPMOB0080EE 88 WAVELENGTH (nm) 89 HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan Telephone: (81)539-62-5248, Fax: (81)539-62-2205 http://www.hamamatsu.com/

Main Products Sales Offices Electron Tubes ASIA: North Europe: Photomultiplier Tubes HAMAMATSU PHOTONICS K.K. HAMAMATSU PHOTONICS NORDEN AB Light Sources 325-6, Sunayama-cho, Smidesvägen 12 Hamamatsu City, 430-8587, Japan SE-171-41 Solna, Sweden Microfocus X-ray Source Telephone: (81)53-452-2141, Fax: (81)53-456-7889 Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Image Intensifiers X-Ray Image Intensifiers U.S.A.: Italy: Microchannel Plates HAMAMATSU CORPORATION HAMAMATSU PHOTONICS ITALIA S.R.L. Fiber Optic Plates Main Office Strada della Moia, 1/E, 360 Foothill Road, P.O. BOX 6910, 20020 Arese, (Milano), Italy Opto-semiconductors Bridgewater, N.J. 08807-0910, U.S.A. Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Si E-mail: [email protected] Hong Kong: Si PIN Photodiodes S&T ENTERPRISES LTD. Si APDs Western U.S.A. Office Room 404, Block B, GaAsP Photodiodes Suite 110, 2875 Moorpark Avenue Seaview Estate, Watson Road, Photo ICs San Jose, CA 95128, U.S.A. North Point, Hong Kong Image Sensors Telephone: (1)408-261-2022, Fax: (1)408-261-2522 Telephone: (852)25125729, Fax: (852)28073155 Position Sensitive Detectors United Kingdom: Taiwan: Phototransistors HAMAMATSU PHOTONICS UK LIMITED S&T HITECH LTD. Infrared Detectors Lough Point, 2 Gladbeck Way, Windmill Hill, 3F-6 No.188, Section 5, Nanking East Road CdS Photoconductive Cells Enfield, Middlesex EN2 7JA, United Kingdom Taipei, Taiwan, R.O.C. Photocouplers Telephone: (44)20-8-367-3560, Fax: (44)20-8-367-6384 Telephone: (886)2-2753-0188, Fax: (886)2-2746-5282 Solid State Emitters France, Portugal, Belgium, Switzerland, Spain: KORYO ELECTRONICS CO., LTD. HAMAMATSU PHOTONICS FRANCE S.A.R.L. 9F-7, No.79, Hsin Tai Wu Road Imaging and Processing Systems 8, Rue du Saule Trapu, Parc du Moulin de Massy, Sec.1, Hsi-Chih, Taipei, Taiwan, R.O.C. Video Cameras for Measurement 91882 Massy Cedex, France Telephone: (886)2-2698-1143, Fax: (886)2-2698-1147 Image Processing Systems Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10 Streak Cameras Republic of Korea: Optical Measurement Systems Swiss Office SANGKI TRADING CO., LTD. Imaging and Analysis Systems Richtersmattweg 6a Suite 431, World Vision Bldg., CH-3054 Schu¨ pfen, Switzerland 24-2, Yoido-Dong, Youngdeungpo-ku, Telephone: (41)31/879 70 70, Fax: (41)31/879 18 74 Seoul, 150-010, Republic of Korea Telephone: (82)2-780-8515, Fax: (82)2-784-6062 Belgiam Office 7, Rue du Bosquet Singapore: B-1348 Louvain-La-Neuve, Belgium S&T ENTERPRISES (SINGAPORE) PTE. LTD. Telephone: (32)10 45 63 34, Fax: (32)10 45 63 67 Block 2, Kaki Bukit Avenue 1, #04-01 to #04-04 Kaki Bukit Industrial Estate, Singapore 417938 Spanish Office Telephone: (65)7458910,Fax: (65)7418201 Centro de Empresas de Nuevas Tecnologias Parc Tecnologico del Valles 08290 CERDANYOLA (Barcelona), Spain Telephone: (34)93 582 44 30, Fax: (34)93 582 44 31

Germany, Denmark, Netherland: APR.2000 REVISED HAMAMATSU PHOTONICS DEUTSCHLAND GmbH Arzbergerstr. 10, Information in this catalog is believed D-82211 Herrsching am Ammersee, Germany to be reliable. However, no Telephone: (49)8152-375-0, Fax: (49)8152-2658 responsibility is assumed for possible inaccuracies or omission. Danish Office Specifications are subject to change Erantisvej 5, Tilst without notice. No patent rights are DK-8381 Mundelstrup, Denmark granted to any of the circuits Telephone: (45)4346-6333, Fax: (45)4346-6350 described herein. ©2000 Hamamatsu Photonics K.K. Netherland Office PO Box 50.075,1305 AB Almere The Netherlands Telephone: (31)36-5382123, Fax: (31)36-5382124 TPMO0003E03 APR. 2000 T Quality, technology, and service are part of every product. Printed in Japan (8,000)