12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
Advances in Semiconductor Devices and Their Growing Use in Electrical Circuits and Systems
e-mail: [email protected] [email protected] Abstract: -
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1 Introduction
ISBN: 978-960-6766-82-4 373 ISSN: 1790-5117 12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
2.1 Thyratrons
2 Vacuum and gas-filled devices
ISBN: 978-960-6766-82-4 374 ISSN: 1790-5117 12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
g 2.3 Krytron 2.2 Ingnitron
ISBN: 978-960-6766-82-4 375 ISSN: 1790-5117 12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
2.4 Over voltage spark-gap 2.5 Triggered spark-gap
ISBN: 978-960-6766-82-4 376 ISSN: 1790-5117 12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
3 Solid-state Power Semiconductor Switches 3.1 Power Diodes 3.2 Power Thyristors
ISBN: 978-960-6766-82-4 377 ISSN: 1790-5117 12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
3.3 IGBT Modules 4. Dimensioning power devices for pulse power applications 4.1 Simulation process
ISBN: 978-960-6766-82-4 378 ISSN: 1790-5117 12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
Thyristor On-state characteristics 8 0 0 0
7 0 0 0 T j = 2 5 ° C T j = 1 2 5 ° C 6 0 0 0 5 0 0 0 (A) 4.2 Simulation models F 4 0 0 0
I Current Forward 3 0 0 0 2 0 0 0 1 0 0 0 4.2.1 Electrical model
0 0 0 . 5 1 1 . 5 2 2 . 5 Forward voltage V F ( V )
ISBN: 978-960-6766-82-4 379 ISSN: 1790-5117 12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
n = • − − • Z th t ∑ An Bn t 4.2.3 Electro-thermal model 4.2.2 Thermal model 4.3 Methodology and simulation example 55.0 50.0 Zth Double Side Cooled
45.0 Zth Cathode Side Cooled Zth Anode Side Cooled 40.0 ( °C/kW ) 35.0 th(j-c) 30.0 25.0
20.0 15.0 Thermal Impedance, Z Impedance, Thermal 10.0 5.0 0.0 0.001 0.01 0.1 1 10 100 Tim e ( s )
ISBN: 978-960-6766-82-4 380 ISSN: 1790-5117 12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
n 1 2 3 4
Junction Temperature under pulse condition 30000 600 I(t) Tj (t) 25000 500
20000 400 15000 300
10000 200 On-State current (A) On-State current
(° Junction C) Temperature 5000 100
0 0 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0.011 0.012 0.013 Time (s) 4.4 Verification of models and simulation process
ISBN: 978-960-6766-82-4 381 ISSN: 1790-5117 12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
On-state voltage @ 4.4kA surge current for DCR1640 (50mm, 2800V ) thyristor
Instantaneous On-state voltage (V) voltage On-state Instantaneous
Time (s) Thyristor on-state voltage @ 10.4 kA surge current DCR1640 (50mm, 2800V) thyristor
(V) On-statevoltage Instantaneous
Time (s) DCR1640: On-state voltage for 24.4kA surge current
voltage (V) On-state Instantaneous
0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 Time(s) 4.5 Pulse power applications
ISBN: 978-960-6766-82-4 382 ISSN: 1790-5117 12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
Current transformer DUT Voltage probe Surge lopps DCR1640F28 60
50 Conditions: T = 125°C 40 case - (kA) VR = 0 TSM half-sine wave ITSM
Instantaneous Instantaneous current (A) 30
20 Instantaneous on-state voltage (V) Surge current, I 10 0 1 10 100
Pulse width, tP - (ms) 5 Conclusion
ISBN: 978-960-6766-82-4 383 ISSN: 1790-5117 12th WSEAS International Conference on CIRCUITS, Heraklion, Greece, July 22-24, 2008
References:
ISBN: 978-960-6766-82-4 384 ISSN: 1790-5117