Electronics: Retrospective View, Successes and Prospects of Its Development
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Lecture 09 Closing Switches.Pdf
High-voltage Pulsed Power Engineering, Fall 2018 Closing Switches Fall, 2018 Kyoung-Jae Chung Department of Nuclear Engineering Seoul National University Switch fundamentals The importance of switches in pulsed power systems In high power pulse applications, switches capable of handling tera-watt power and having jitter time in the nanosecond range are frequently needed. The rise time, shape, and amplitude of the generator output pulse depend strongly on the properties of the switches. The basic principle of switching is simple: at a proper time, change the property of the switch medium from that of an insulator to that of a conductor or the reverse. To achieve this effectively and precisely, however, is rather a complex and difficult task. It involves not only the parameters of the switch and circuit but also many physical and chemical processes. 2/44 High-voltage Pulsed Power Engineering, Fall 2018 Switch fundamentals Design of a switch requires knowledge in many areas. The property of the medium employed between the switch electrodes is the most important factor that determines the performance of the switch. Classification Medium: gas switch, liquid switch, solid switch Triggering mechanism: self-breakdown or externally triggered switches Charging mode: Statically charged or pulse charged switches No. of conducting channels: single channel or multi-channel switches Discharge property: volume discharge or surface discharge switches 3/44 High-voltage Pulsed Power Engineering, Fall 2018 Characteristics of typical switches A. Trigger pulse: a fast pulse supplied externally to initiate the action of switching, the nature of which may be voltage, laser beam or charged particle beam. -
CHARGE-Series Instructions
CHARGE-SERIES operating instructions REV216 Use for models CHARGE1000, CHARGE5000, CHARGE10000 DANGER do not use this unit unless you fully understand high -voltage and its hazards. DANGER A SERIOUS DEADLY SHOCK HAZARD WILL EXIST WHEN USING WITH HIGH ENERGY CAPACITORS ABOVE 50 J You can calculate joules by squaring the charging voltage, then multiplying by one half the capacitance in microfarads and dividing by 1 million. If over 50 J use extreme caution as improper contact can electrocute OR cause serious burns. PLEASE READ THE FOLLOWING VERY CAREFULLY Capacitive energy storage over 1000 joules MUST use for the high-voltage charge feed wire from the unit to the capacitors being SEVERAL FEET of a thin insulated preferably Teflon wire of a gauge that will disintegrate as a fuse between 100-500 amps. This wire should be sleeved into some polyethylene tubing that is available in a hardware store. You may even want to use several telescopic layers as this sleeving to provide a positive voltage rating and good mechanical rigidity. Note on knob Figure 1: Front Panel Controls CHARGE-SERIES ● rev216 © 2014 Information Unlimited www.amazing1.com 1 All rights reserved Figure 2: Back Panel CHARGE-SERIES ● rev216 © 2014 Information Unlimited www.amazing1.com 2 All rights reserved APPLICATIONS Electronic circuit charges up high energy banks of electrolytic, photo flash or other types storage capacitors from 200 to 30,000 V (depending on charger model) . Recommended capacities are between 100 to 10,000 µF. This equates out to many thousands of joules! Note the kinetic energy of a 30-06 is 750 J. -
X-Ray Spectra from a Brass-Target Plasma Triode Abstract in This
X-ray Spectra from a Brass-target Plasma Triode Eiichi SATO, Haruo OBARA, Toshiyuki ENOMOTO, Etsuro TANAKA Hidezo MORI, Toshiaki KAWAI, Toshio ICHIMARU, Akira OGAWA Shigehiro SATO, Kazuyoshi TAKAYAMA Jun ONAGAWA I) Department of Physics , Iwate Medical University 2) Department of Radiological Technology , College of Medical Science, Tohoku University 3) The 3rd Department of Surge ry, Toho University School of Medicine 4) Department of Nutrition al Science, Faculty of Applied Bioscience, Tokyo University of Agriculture 5) Department of Cardiac Physiology , National Cardiovascular Center Research Institute 6) Electron Tube Division #2, Hamamatsu Photonics K. K. 7) Department of Radiologi cal Technology, School of Health Sciences, Hirosaki University 8) Department of Neurosurgery , School of Medicine, Iwate Medical University 9) Department of Microbiolog y, School of Medicine, Iwate Medical University 10) Tohoku University Biomedical Engineering Research Organization II) Department of Electronics , Faculty of Engineering, Tohoku Gakuin University Research Code No.: 200, 204.1 Keywords:Flash x-ray,Brass target, Weaklyionized linear plasma, Characteristicx-rays, Absorptionof zinc Kj3rays Abstract In this paper, we describe a recentlydeveloped table-top plasma x-ray generator utilizing a brass-targettriode, which we used in preliminary experiments for the superpositionof K-series characteristicx-rays in weakly ionized plasma and for producing their higher harmonics. In the plasma flash x-raygenerator, a 200 nF condenser was charged,and flash x-rays were producedby discharging.The x-ray tube was a demountabletriode with a brass target containing65% copper and 35% zinc by weight, and a turbomolecularpump evacuatedair from the tube with a pressure of 1 mPa. Targetevaporation led to the formationof weakly ionized linear plasma, consistingof metal ions and electrons,around the rod target, and intense characteristicx-rays were produced. -
Capillary Discharge XUV Radiation Source M
Acta Polytechnica Vol. 49 No. 2–3/2009 Capillary Discharge XUV Radiation Source M. Nevrkla A device producing Z-pinching plasma as a source of XUV radiation is described. Here a ceramic capacitor bank pulse-charged up to 100 kV is discharged through a pre-ionized gas-filled ceramic tube 3.2 mm in diameter and 21 cm in length. The discharge current has ampli- tude of 20 kA and a rise-time of 65 ns. The apparatus will serve as experimental device for studying of capillary discharge plasma, for test- ing X-ray optics elements and for investigating the interaction of water-window radiation with biological samples. After optimization it will be able to produce 46.9 nm laser radiation with collision pumped Ne-like argon ions active medium. Keywords: Capillary discharge, Z-pinch, XUV, soft X-ray, Rogowski coil, pulsed power. 1 Introduction column by the Lorentz force FL of a magnetic field B of flowing current I – a Z-pinch. First, the current flows along the In the region of XUV (eXtended Ultra Violet) radiation, walls of the capillary. The flowing current creates a magnetic i.e. in the region of ~ (0.2–100) nm there are two significant field, which affects the charged particles of the plasma by sub-regions. The first is the water-window region (2.3–4.4) a radial force. This force compresses the particles like a nm. Radiation in this region is highly absorbed in carbon, but snowplow till the magnetic pressure is equilibrated by the not much absorbed in water, so it is useful for observing or- plasma pressure. -
Type Here the Title of Your Paper
CIGRE-183 2019 CIGRE Canada Conference Montréal, Québec, September 16-19, 2019 The Research on the Key Equipment for 750kV Fixed Series Compensation in 3000m a.s.l. CHEN Yuanjun,ZHOU Qiwen,WANG Dechang,Gao Jian,Chen Wei, Zhang Daoxiong (1. NR Electric Co., Ltd., Nanjing 211102, China) SUMMARY The Qinghai 750kV fixed series compensation is officially put into operation in December 2018, it is located in the Qaidam area of China where the altitude is 3000m.In this paper, the high-altitude insulation calculation of the main equipment is carried out, and the power frequency withstand voltage, lightning impulse voltage, dry arc distance and creepage distance of each main equipment are proposed. Based on the project, we researched the key equipment such as spark gap and measurement system. According to the ANSYS simulation, the structure of the main electrode of the spark gap is optimized from ball-ball electrode to ball-plate electrode to make the self-trigger voltage be more stable. Considering the self-trigger voltage of the trigatron is up to 60kVpeak, the electrode structure of the trigatron is optimized to the structure with large curvature spherical design. The new trigatron has a better linearity and the maximum standard deviation is less than 0.6. In order to research the triggering characteristics, we completed the self-trigger test in the laboratory where the altitude is 0m, and fit the curve of the main gap air distance and the self-trigger voltage. Considering the altitude correction, we calculate the theoretical value of the main gap air distance according the self-trigger curve. -
BU4-20DCOMPONENT LIST Serial Item No
BU4-20DCOMPONENT LIST Serial Item No. Component Type Manufacturer Quantity Approval No. 1 Fuse Fuse 20N250V 2A Xiamen Hollyland 1 E156471/E23 NF02-2A Co.,Ltd./Southern Electronic 4086 Element Factory 2 D1-D5 Diode 1N4007 1A,1KV Changda Electronic Component 5 No Factory No 3 T1-T2 Transistor D4128L 5 Jilin Huawei Electronics Co., Ltd. 2 A Shenzhen Shen’ai Electronics Co., Ltd 4 R3,R5 Resistor RT14 15Ω 1/4W Xiamen Gaoming Electronics Co., 2 No Ltd./ChangZhou WuJin HuaYu Electronic Co.,Ltd 5 R0、R1、 Resistor RT14 680kΩ 1/4W Xiamen Gaoming Electronics Co., 3 No R2 Ltd./ChangZhou WuJin HuaYu Electronic Co.,Ltd 6 C1 Capacitor CD11G 105℃ 22µF Yiyang Zijiang Electronic 1 No DC250V Component Co., Ltd. HXB 105℃ 22µF Xiamen Fala HeXin Capacitor DC250V Factory 7 C01 Capacitor CL 125℃ 68nF Xiamen Faratronic Co., Ltd. 1 No DC250V Epcos 8 C2 Capacitor CBB 125℃500pF Shanghai JiaLiBao Electron Co.,Ltd 1 No DC1250V Zhejiang Changxing Huaqiang Electron Co., Ltd. 9 C3 Capacitor CL 125℃ 22nF Zhuji Wufeng Capacitor Factory 1 No DC160V Zhejiang Changxing Huaqiang Electron Co., Ltd. 10 C4 Capacitor CL 125℃ 68nF Xiamen Faratronic Co., Ltd. 1 No DC250V Epcos 11 C5 Capacitor CBB 125℃5.6nF Shanghai JiaLiBao Electron Co.,Ltd 1 No DC1250V Zhejiang Changxing Huaqiang Electron Co., Ltd. Xiamen Faratronic Co., Ltd. Epcos 12 DB3 Trigatron DB3 Vz=32V Jinan Jifu Semiconductor Co., Ltd. 1 No 13 L0 Inductor LGA0410 Southern Electronic Element 1 No 100μH Factory 14 L1 Inductor EE161.5-1.6mH Xiamen XiaoTian Electronics Co., 1 No Ltd. -
High Speed Plasma Diagnostics for Laser Plasma Interaction and Fusion Studies
Sadhan& Vol. 24, Part 6, December 1999, pp. 513 549. ~' Printed in India High speed plasma diagnostics for laser plasma interaction and fusion studies V N RAI, M SHUKLA, H C PANT and D D BHAWALKAR Laser Programme, Centre for Advanced Technology, PO CAT, Indore 452 013, India e-mail: [email protected] MS received 26 February 1998; revised 25 May 1999 Abstract. Laser plasma interaction and fusion studies involve many high speed plasma diagnostics to determine the various parameters for explaining the physical processes taking place in plasma. Detection and analysis of short-term or transient radiations (X-ray and visible) are the bases for diagnosing the physical processes occurring during laser-plasma interaction or similar radiation-emitting processes. This paper reviews the development of various high speed plasma diagnostics which are not only applicable in determining the temporal, spatial and spectral properties of X-rays for this purpose but also have wide use in various other fields of research. Keywords. Laser-plasma interaction; fusion studies; transient radiations; high speed plasma. 1. Introduction Interaction of a high intensity laser light with matter (solid target) first vaporizes material from the surface which ultimately gets converted into plasma (ionized gas). This laser produced plasma expands into the vacuum where propagation of laser light is modified by the free electrons present in the plasma (Jacob et al 1976; Cairn & Sanderson 1980; Max 1982; Kruer 1988; Radziemski & Cramers 19891. The plasma formed by a high intensity or small time duration laser has very steep density and temperature gradients as compared to the plasma formed by the low intensity or long time duration laser. -
INFORMATION CIRCULAR Original: ENGLISH (Unofficial Electronic Edition) ______
INF INFCIRC/254/Rev.3/Part 2*/ 24 February 1998 International Atomic Energy Agency GENERAL Distr. INFORMATION CIRCULAR Original: ENGLISH (Unofficial electronic edition) ___________________________________________________________________________ COMMUNICATION RECEIVED FROM CERTAIN MEMBER STATES REGARDING GUIDELINES FOR THE EXPORT OF NUCLEAR MATERIAL, EQUIPMENT AND TECHNOLOGY Nuclear-related Dual-use Transfers 1. The Director General has received notes verbales dated 30 September 1997 from the Resident Representatives to the Agency of Argentina, Australia, Austria, Belgium, Bulgaria, Canada, the Czech Republic, Denmark, France, Germany, Greece, Hungary, Ireland, Italy, Japan, Republic of Korea, New Zealand, Norway, Poland, Portugal, Romania, the Russian Federation, the Slovak Republic, South Africa, Spain, Sweden, Switzerland, Ukraine, the United Kingdom of Great Britain and Northern Ireland, and the United States of America relating to the export of nuclear material, equipment and technology. 2. The purpose of the notes verbales is to provide further information about the Guidelines for Transfers of Nuclear-related Dual-use Equipment, Material and related Technology in accordance with which the relevant Governments act. 3. In the light of the wish expressed at the end of each note verbale, the text of the notes verbales is attached. The attachment to these notes verbales is also reproduced in full. _____________________ */ INFCIRC/254/Rev.3/Part 1 contains Guidelines for Nuclear Transfers ANNEX NOTE VERBALE The Permanent Mission of [Member State] presents its compliments to the Director General of the International Atomic Energy Agency and has the honour to refer to its [relevant previous communication(s)] concerning the decision of the Government of [Member State] to act in accordance with the Guidelines for Transfers of Nuclear-Related Dual-Use Equipment, Material and Related Technology currently published as document INFCIRC/254/Rev.2/Part 2/MOD. -
14F1417 Doc 01
This document is made available through the declassification efforts and research of John Greenewald, Jr., creator of: The Black Vault The Black Vault is the largest online Freedom of Information Act (FOIA) document clearinghouse in the world. The research efforts here are responsible for the declassification of hundreds of thousands of pages released by the U.S. Government & Military. Discover the Truth at: http://www.theblackvault.com . - ·- - --·--·---------------------- A RAND NOTE ; '\Ill C: \ I I P;iS IIF ,\ ~l lrJ I T "•\ ~TI Cl l ·IIINI l\1':,\l'Cl :-o; J'R(\(;:c.N II . i•l. ''ii'll-l'•l\~ FR r: wsn:r: 'i\~ TT CJIJ·::: cl' l PrPpared For J)v2S4 forr.~ dat..:d 10/23/80 for t:o•ttrac t tiDI\903-; 8-C-018~ .and C l os~ified by multic.:..P=.lc::..' ...:s:..::o:..::u:..::r:..::c:..::I!:.:.S:...·----- Downgrade to o •._ ____ _ Declassify on____ _________ or Re·,iew on.--J\wiJ..;.'!.!ill:~:t~-·"'-!.... _ •...!. '1 !..!11____ _ .. ,.,. , : ~·~ . ' Un1:ut.ho-:-iz;J1 u; 6:wo tl ou:~ •--~ · ·- A RAND NOTE INDICATIONS Of A SOVIET PARTI CLE-S~! WF.APON PROGRAM II. PULSED-POWER CLOSlh~ SWITCHES (U) Simon Ka esel 1\uguc;t 1981 / N-1738- ARPA The Defense Advanced Re sear ch Projects Agency >- 8 ~ 81.. 10 ~ b.;.. r ... ~ -,4-- .,_~ -· ~..-.-.... - ·- BEST AVAILABLE COPY .. I.: I'· .u.: ·ilit:a J 1he research described i n this report was spon~ored by t h• Defense Advanced Research P~·oject$ Agency cnder ARPA Order No. 3520, Contract No. M!lA90J-78-I~-0 189, Director' s Office. -
What Is Pulsed Power
SAND2007-2984P PULSED POWER AT SANDIA NATIONAL LABORATORIES LABORATORIES NATIONAL SANDIA PULSED POWER AT WHAT IS PULSED POWER . the first forty years In the early days, this technology was often called ‘pulse power’ instead of pulsed power. In a pulsed power machine, low-power electrical energy from a wall plug is stored in a bank of capacitors and leaves them as a compressed pulse of power. The duration of the pulse is increasingly shortened until it is only billionths of a second long. With each shortening of the pulse, the power increases. The final result is a very short pulse with enormous power, whose energy can be released in several ways. The original intent of this technology was to use the pulse to simulate the bursts of radiation from exploding nuclear weapons. Anne Van Arsdall Anne Van Pulsed Power Timeline (over) Anne Van Arsdall SAND2007-????? ACKNOWLEDGMENTS Jeff Quintenz initiated this history project while serving as director of the Pulsed Power Sciences Center. Keith Matzen, who took over the Center in 2005, continued funding and support for the project. The author is grateful to the following people for their assistance with this history: Staff in the Sandia History Project and Records Management Department, in particular Myra O’Canna, Rebecca Ullrich, and Laura Martinez. Also Ramona Abeyta, Shirley Aleman, Anna Nusbaum, Michael Ann Sullivan, and Peggy Warner. For her careful review of technical content and helpful suggestions: Mary Ann Sweeney. For their insightful reviews and comments: Everet Beckner, Don Cook, Mike Cuneo, Tom Martin, Al Narath, Ken Prestwich, Jeff Quintenz, Marshall Sluyter, Ian Smith, Pace VanDevender, and Gerry Yonas. -
Appendix I Klhctrohics for Magihg Atom Probe 1.1
APPENDIX I KLHCTROHICS FOR MAGIHG ATOM PROBE 1.1 ZHTRODDCTIOH The major limitation of PIM lies in its inability to chemically identify the imaging species. The atom probe PIM^ can give us the information about the chemical nature of a single atom (or a group of atoms) on the specimen tip surface. Panitz '-^ introduced a new technique known as Imaging Atom Probe (lAP), which gives the spatial distribution of the surface species. It mass analyzes the field evaporated species from the specimen surface on the basis of time of flight mass spectroscopy. The lAP, which is essentially a field desorption microscope with time gated microchannel plate (MCP) detector, is a powerful tool for studying a number of metallurgical problems. The electronic circuitry built in this laboratory for the lAP (figure 1.1) consisted of (i) two high voltage nanosecond pulsers, one for field evaporation from the tip and another for MCP activation, (ii) a variable delay network, and (iii) a master pulser to synchronize the whole operation. The two high voltage pulsers were identical, except the output pulse amplitude. Each of them comprised of the Krytron pulser and the avalanche transistor pulser used for grid triggering the Krytron. The combination of the master pulser and the variable delay network was used to get the two pulses having an adjustable time interval between them. These pulses were used to tri^er the avalanche transistor pulsers. Thus, the high voltage pulse for field evaporation and the MCP activation pulse after a presettable time delay "t" were obtained. The time gated images of the desired species are obtainable by deciding the delay time from following equation 73 CRYOSTAT ChteVRON MICROCHANNEL ^ PLATE - SCREEAi '4 ;5 ^ lOM —WWW -• +5 kV ^Vdc -vv5/J^ -• + 1-3kV 50M -VWWw -• + 0-3 kV 500 pP 5wi i:_--500p F X KRYTRON KRYTRON PULSER PULSER AVALANCHE VARIABLE AVAL/INCHE TR-ANSISTOR TRANSfS TOR PELAY PULSER PULSER NETWORK M/^STER PULSER. -
Master Product Fisting
Richardson "' Electronics, Ltd. Master Product fisting Part #and Description Guide • Electron Tubes • Semiconductors r Electron Tubes Part Description Part # Description Part # Description LCMG-B X-Ray Tube 2AS15A Receiving Rectifier QB3.5/750GA Power Tetrode QEL1/150 Power Tetrode 2AV2 Receiving Tube 6163.5/750/6156 Power Tetrode CCS-1/Y799 CC Power Tetrode 2822 Planar Diode QBL3.5/2000 Power Triode PE1/100/6083 Power Pentode 2B35/EA50 UHF Diode W3/2GC TWi C1A Thyratron 2694 Twin Tetrode W3/2GR TWi GV1A-1650 Corona Voltage Reg 2BU2/2AS2A/2AH2 Receiving Tube 61QV03/20A UHF Twin Tetrode CE1A/B Phototube 2C36 UHF Triode QQE03/20/6252 UHF Twin Tetrode 1A3/DA90 Mini HF Diode 2C39A Planar Triode QQE03/12/6360A Twin Tetrode 1AD2A/1BY2 Receiving Tube 2C39BA Planar Triode OE3/85A1 Voltage Regulator C1 B/3C31 /5664 Thyratron 2C39WA Planar Triode OG3/85A2 MIN Volt Regulator 1B3GT/1 G3GT Receiving Tube 2C40A Planar Triode QB3/200 Power Tetrode 1B35A ATR Tube 2C43 Planar Triode QB3/300 Power Tetrode 1658A TR Tube 2C51/396A MIN Twin Triode QB3/300GA Power Tetrode 1859/R1130B Glow Modulator 2C53 High Voltage Triode T83/750 Power Triode 1B63B TR Tube 2CW4 Receiving Tube OA3NR75 Voltage Regulator 1885 Geiger-Mueller Tube 2D21 Thyratron OB3NR90 Voltage Regulator 1BQ2IDY802 Receiving Rectifier 2D21W/5727 MIN Thyratron OC3NR105 Voltage Regulator 1C21 Cold Cathode 2D54 Receiving Tube OD3NR150 Voltage Regulator 1D21 /SN4 Cold Cathode Dischg 2E22 Pentode OB3A Receiving Tube 1G3GT/ 1B3GT Receiving Tube 2E24 Beam Amplifier OC3A Voltage Regulator 1G35P Hydrogen Thyratron 2E26 Beam Amplifier OD3A Voltage Regulator 1HSGT Recv.