Development and Application of Resistance Strain Force Sensors
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Sensor Connectors
Sensor Connectors Thermocouple Connector - Two Pole Assembly Termination Code: 2 • Glass filled thermoplastic body provides high strength at temperatures up to 425°F 218°C) as well as low moisture absorption and good dielectric constant . • Heavy duty hollow pin construction prevents reverse mating of polarity.* • Body color coded to ISA and ANSI standards. 1” • Polarity indicated by symbols molded into body. • Contacts made of thermocouple materials which meet ISA and ANSI standards . • Jack spring loaded to insure firm grip to plug. • Accepts wire sizes to 14 awg. • Single screw cover cap for fast assembly. • Accepts crimp and tube adapter for product from .020 to .375. • Finger grips to permit ease of connection. 7/16” • Quick wiring hook up with large head screws and wire channel. Catalog Number Thermocouple Body Actual Alloy Plugs Jacks Type Color + In Connector - 1/2” LP-J L J-J Iron-Constantan® Black Iron Constantan® LP-K L J-K Chromel®-Alumel® Yellow Chromel® Alumel® 7/8” LP-E L J-E Chromel®-Constantan® Violet Chromel® Constantan® LP-T L J-T Copper-Constantan® Blue Copper Constantan® 1 3/8” LP-R/S L J-R/S Platinum/Rhodium- Green Copper #11 Alloy Platinum LP-CU L J-CU Uncompensated White Copper Copper Assembly Termination Code: 5 *Solid pin available on above construction. Add S to Part No. (i.e. LPS-J) Miniature Thermocouple Connector Assembly Termination Code: 3 • Thermoplastic body provides high strength at temperatures up to 425°F (218°C) as well as low moisture absorption and good dielectric constant . • Small, light weight and space saving. -
An Apparatus for Measuring the Piezoresistivity of Semiconductors
- - --------------------- --- ~----------...., Journal of Research of the National Bureau of Standards Vol. 59 No.6, December 1957 Research Paper 2814 An Apparatus for Measuring the Piezoresistivity of Semiconductors 1 R. F. Potter 2 and W. 1. Me Kean A detailed description is given of an apparatus and procedure designed to measure t he piezoresistive effect in semiconductors over an extended temperature range. A tensile force up to 1 kilogram can be appli ed to the sample by means of a calibrated beam balance. The apparatus has been used for measurements on indium antimonide over the range 780 K to 3000 K , and tensile stresses of the order of 5 X 107 dynes per square centimeter can be applied t o samples that are cut in a special manner. In modern solid-state physics, phenomena such as a form quite analogous to that for the elastic con electrical conduction, Han effect, and optical absorp stants. The II-constants are defined as follows: tion have been studied extensively because of their direct connection with a well-developed theory of IIn = IIll, II semiconductors. More recently several other effects have been receiving an increasing amount of attention (2) by both the theorist and experimentalist; some of these are cyclotron resonance, photoelectromagnetic effect, magnetoresistivity, and piezoresistivity. The latter parameter has been studied for some X ij is the applied stress, and P is the resistivity, time in connection with m etals, but it is only in where the cubic axes are taken as the reference axes. comparatively recent years that large anisotropic The change of resistance in a material is measured changes in the resistivity with applied stress were when a stress is applied in a given direction to a measUTed for single crystals with cubic symmetry. -
Advances in Piezoresistive Probes for Atomic Force
ADVANCES IN PIEZORESISTIVE PROBES FOR ATOMIC FORCE MICROSCOPY A DISSERTATION SUBMITTED TO THE DEPARTMENT OF MECHANICAL ENGINEERING AND THE COMMITTEE ON GRADUATE STUDIES OF STANFORD UNIVERSITY IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY Jonah A. Harley March 2000 ii Ó Copyright by Jonah A. Harley 2000 All Rights Reserved iii I certify that I have read this dissertation and that in my opinion it is fully adequate, in scope and quality, as dissertation for the degree of Doctor of Philosophy. __________________________________ Thomas W. Kenny (Principal Advisor) I certify that I have read this dissertation and that in my opinion it is fully adequate, in scope and quality, as dissertation for the degree of Doctor of Philosophy. __________________________________ Storrs T. Hoen I certify that I have read this dissertation and that in my opinion it is fully adequate, in scope and quality, as dissertation for the degree of Doctor of Philosophy. __________________________________ Calvin F. Quate Approved for the University Committee on Graduate Studies __________________________________ iv Abstract The atomic force microscope (AFM) is a tool that enables the measurement of precisely localized forces with unprecedented resolution in time, space and force. At the heart of this instrument is a cantilever probe that sets the fundamental limitations of the AFM. Piezoresistive cantilevers provide a simple and convenient alternative to optically detected cantilevers, and have made it easier for commercial applications to exploit the power of the force microscope. Unfortunately, piezoresistive cantilevers do not provide performance levels equal to those of the optically detected AFM. Several advances will be discussed in this work that largely erase that discrepancy, and in some cases take the capabilities of the piezoresistive cantilever beyond those of the standard AFM cantilever. -
Modeling Piezoresistivity in Silicon and Polysilicon
November 19, 2005 10:41 Journal of Applied Engineering Mathematics Volume 2 MODELING PIEZORESISTIVITY IN SILICON AND POLYSILICON Gary K. Johns Mechanical Engineering Department Brigham Young University Provo,Utah 84602 ABSTRACT INTRODUCTION The piezoresistive effect of silicon is often utilized in sen- Piezoresistivity is a material property that couples bulk elec- sors. Due to the crystalline nature of silicon, the sensitivity of trical resistivity to mechanical strain [1]. In other words, as a ma- the piezoresistive effect depends on many things including the terial is stretched, compressed, or distorted in any way, the elec- direction and magnitude of the applied stress and the orientation trical resistivity changes. Almost all materials have this property, of the crystallographic plane. A method of modeling the piezore- even though in some it is so small that it is virtually undetectable. sistive effect in silicon and poly crystalline silicon is presented. However, other materials show a large change in resistivity for a This mathematical model includes partial derivatives and linear relatively small strain. One of these materials is silicon. The algebra to combine basic electrical and mechanical equations to piezoresistive effect in silicon makes it a good candidate to use describe the change in resistivity as a function of stress. An ex- as a sensor. A sensor element is a device that converts one form periment was used to verify the model. The analytical solution of energy into another [2]. An element made from silicon can and experimental results agree. The model presented in this pa- be designed to be a sensor since the piezoresistive property links per is adequate to predict the behavior of a piezoresistive sensor strain energy to change in resistance (electrical energy). -
The Piezojunction Effect in Silicon, Its Consequences and Applications for Integrated Circuits and Sensors
The Piezojunction Effect in Silicon, its Consequences and Applications for Integrated Circuits and Sensors The Piezojunction Effect in Silicon, its Consequences and Applications for Integrated Circuits and Sensors PROEFSCHRIFT ter verkrijging van de graad van doctor aan de Technische Universiteit Delft, op gezag van de Rector Magnificus prof. Ir. K. F. Wakker, voorzitter van het College voor Promoties, in het openbaar te verdedigen op maandag 24 september 2001 om 10:30 uur door Fabiano FRUETT master in electric engineering, UNICAMP, Brazil geboren te São Caetano do Sul, Brazil Dit proefschrift is goedgekeurd door de promotor: Prof. dr. ir. A.H.M. van Roermund Togevoegd promotor: Dr. ir. G.C.M. Meijer Samenstelling promotiecommissie: Rector Magnificus, Technische Universiteit Delft, voorzitter Prof. dr. ir. A.H.M. van Roermund,Technische Universiteit Delft, promotor Dr. ir. G.C.M. Meijer, Technische Universiteit Delft, toegevoegd promotor Prof. dr ir. R. Puers, Katholieke Universiteit Leuven, Belgium Prof. ir. A.J.M. van Tuijl, Philips Research Laboratories, Eindhoven Dr. C.A. dos Reis Filho, Univesridade Estadual de Campinas, Brazil Prof. dr. ir. J.W. Slotboom, Technische Universiteit Delft Prof. dr. ir. J.H. Huijsing, Technische Universiteit Delft Published and distributed by: DUP Science DUP Science is an imprint of Delft University Press P.O. Box 98 2600 MG Delft The Netherlands Phone: +31 15 27 85 678 Fax: +31 15 27 85 706 E-mail: [email protected] ISBN 90-407-2226-9 Keywords: piezojunction effect, analogue integrated circuit and mechanical-stress sensor. Copyright 2001 by Fabiano Fruett All rights reserved. No part of the material protected by this copyright notice may be reproduced or utilized in any form or by means, electronic or mechanical, including photocopying, recording, or by any information storage and retrieval system, without written permission from the publisher: Delft University Press. -
Characteristic and Analysis of Silicon Germanium Material As MEMS Pressure Sensor
Available online www.jocpr.com Journal of Chemical and Pharmaceutical Research, 2015, 7(1):411-415 ISSN : 0975-7384 Research Article CODEN(USA) : JCPRC5 Characteristic and analysis of silicon germanium material as MEMS pressure sensor S. Maflin Shaby Dept of Electronics and Telecommunication Engineering, Sathyabama University, Chennai, India _____________________________________________________________________________________________ ABSTRACT The silicon based pressure sensor is one of the major applications of the piezoresistive sensor. This paper focuses on the structural design and optimization of the MEMS piezoresistive pressure sensor to enhance the sensitivity. A finite element method (FEM) is adopted for designing the performance of a silicon based piezoresistive pressure sensor. Thermal as well as pressure loading on the sensor is applied to make a simulation results. In order to achieve better sensor performance, a parametric analysis is performed to evaluate the system output sensitivity of the pressure sensor. The design parameters of the pressure sensor include the location of piezoresistors and the new structural material used for designing of the piezoresistors in the membrane is poly-Silicon Germanium in which germanium is about 60%. The findings depict that proper selection of the piezoresistors location and the new structural material of the piezoresistors in the membrane can enhance the sensor sensitivity. Keywords: Piezoresistors, sensor, parametric analysis, silicon germanium, piezoresistivity, sensitivity _____________________________________________________________________________________________ INTRODUCTION The silicon based pressure sensor is one of the major applications of the piezoresistive sensor. Nowadays, silicon piezoresistive pressure sensor is a matured technology in industry and its measurement accuracy is more rigorous in many advanced applications. The fundamental concept of piezoresistive effect is the change in receptivity of a material resulting from an applied stress. -
Strain Gage Technical Data
STRAIN GAGE TECHNICAL DATA STRAIN GAGE MEASUREMENT The most universal measuring device for the electrical measurement of mechanical quantities is the strain gage. Several types of strain gages depend for their operation on the proportional variance of electrical resistance to strain: the piezoresistive or semi-conductor gage, the carbon resistive gage, the bonded metallic wire, and foil resistance gages. The bonded resistance strain gage is by far the most widely used in experimental stress analysis. This gage consists of a grid of very fine wire or foil bonded to a backing or carrier matrix. The electrical resistance of the grid varies linearly with strain. In use, the carrier matrix is bonded to the surface, force is applied, and the strain is found by measuring the change in resistance. The bonded resistance strain gage is low in cost, can be made with a short gage length, is only moderately affected by the bridge. This method assumes a wiring is located in a time-varying temperature changes, has small linear relationship between voltage magnetic field. out and strain, an initially balanced physical size and low mass, and Magnetic induction can be has fairly high sensitivity to strain. bridge, and a known VIN. In reality, the VOUT-strain relationship is controlled by using twisted lead In a strain gage application, the wires and forming minimum but carrier matrix and the adhesive nonlinear, but for strains up to a few thousand micro-strain, the error is equal loop areas in each side of must work together to transmit the the bridge. strain from the specimen to the grid. -
Electromechanical Piezoresistive Sensing in Suspended Graphene
This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright © American Chemical Society after peer review. To access the final edited and published work see http://pubs.acs.org/articlesonrequest/AOR-kGn5XaTPGiC7mYUQfih3. Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes A.D. Smith1, F. Niklaus1, A. Paussa2, S. Vaziri1, A.C. Fischer1, M. Sterner1, F. Forsberg1, A. Delin1, D. Esseni2, P. Palestri2, M. Östling1, M.C. Lemme1,3,* 1 KTH Royal Institute of Technology, Isafjordsgatan 22, 16440 Kista, Sweden, 2 DIEGM, University of Udine, Via delle Scienze 206, 33100 Udine, Italy 3University of Siegen, Hölderlinstr. 3, 57076 Siegen, Germany * Corresponding author: [email protected] Abstract Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical (NEMS) devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a nano- electromechanical membrane configuration that provides direct electrical readout of pressure to strain transduction. This makes it highly relevant for an important class of nano-electromechanical system (NEMS) transducers. This demonstration is consistent with our simulations and previously reported gauge factors and simulation values. The membrane in our experiment acts as a strain gauge independent of crystallographic orientation and allows for aggressive size scalability. When compared with conventional pressure sensors, the sensors have orders of magnitude higher sensitivity per unit area. Keywords: graphene, pressure sensor, piezoresistive effect, nanoelectromechanical systems (NEMS), MEMS 2 Graphene is an interesting material for nanoelectromechanical systems (NEMS) due to its extraordinary thinness (one atom thick), high carrier mobility 1,2, a high Young’s modulus of about 1 TPa for both pristine (exfoliated) and chemical vapor deposited (CVD) graphene.3,4 Graphene is further stretchable up to approximately 5 6 20%. -
A Model for Predicting the Piezoresistive Effect in Microflexures Experiencing Bending and Tension Loads
Brigham Young University BYU ScholarsArchive Faculty Publications 2008-02-07 A Model for Predicting the Piezoresistive Effect in Microflexures Experiencing Bending and Tension Loads Gary K. Johns [email protected] Larry L. Howell [email protected] Brian D. Jensen Timothy W. McLain [email protected] Follow this and additional works at: https://scholarsarchive.byu.edu/facpub Part of the Mechanical Engineering Commons BYU ScholarsArchive Citation Johns, Gary K.; Howell, Larry L.; Jensen, Brian D.; and McLain, Timothy W., "A Model for Predicting the Piezoresistive Effect in Microflexures Experiencing Bending and Tension Loads" (2008). Faculty Publications. 202. https://scholarsarchive.byu.edu/facpub/202 This Peer-Reviewed Article is brought to you for free and open access by BYU ScholarsArchive. It has been accepted for inclusion in Faculty Publications by an authorized administrator of BYU ScholarsArchive. For more information, please contact [email protected], [email protected]. 226 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 17, NO. 1, FEBRUARY 2008 A Model for Predicting the Piezoresistive Effect in Microflexures Experiencing Bending and Tension Loads Gary K. Johns, Larry L. Howell, Fellow, ASME, Brian D. Jensen, Member, ASME,and Timothy W. McLain, Senior Member, IEEE Abstract—This paper proposes a model for predicting the or a membrane). In the proposed integrated piezoresistive self- piezoresistive effect in microflexures experiencing bending sensing devices, however, rather than the piezoresistive element stresses. Linear models have long existed for describing piezore- being part of the flexure, it is the flexure. The loading condi- sistivity for members in pure tension and compression. However, extensions of linear models to more complex loading conditions tions for such sensors are more complex than pure tension or do not match with experimental results. -
Linear Thermal Expansion Coefficients of Metals and Alloys
17 Material Expansion Coefficients Chapter 17 Material Expansion Coefficients Linear Thermal Expansion Coefficients of Metals and Alloys Linear Thermal Expansion Coefficients of Metals and Alloys Table 17-1 provides the linear thermal expansion coefficients of the most frequently used metals and allows. Table 17-1. Linear thermal expansison coefficients of metals and alloys Coefficient of Expansion Alloys ppm/°C ppm/°F ALUMINUM AND ALUMINUM ALLOYS Aluminum (99.996%) 23.6 13.1 Wrought Alloys EC 1060 and 1100 23.6 13.1 2011 and 2014 23.0 12.8 2024 22.8 12.7 2218 22.3 12.4 3003 23.2 12.9 4032 19.4 10.8 5005, 5050, and 5052 23.8 13.3 5056 24.1 13.4 5083 23.4 13.0 5086 23.9 13.3 5154 23.9 13.3 5357 23.7 13.2 5456 23.9 13.3 6061 and 6063 23.4 13.0 6101 and 6151 23.0 12.8 7075 23.2 12.9 7090 and 7178 23.4 13.0 17-2 User’s Manual Chapter 17 Material Expansion Coefficients Linear Thermal Expansion Coefficients of Metals and Alloys Table 17-1. Linear thermal expansison coefficients of metals and alloys (Cont.) Coefficient of Expansion Alloys ppm/°Cppm/°F ALUMINUM AND ALUMINUM ALLOYS (Continued) Casting Alloys A13 20.4 11.4 43 and 108 22.0 12.3 A108 21.5 12.0 A132 19.0 10.6 D132 20.5 11.4 F132 20.7 11.5 138 21.4 11.9 142 22.5 12.5 195 23.0 12.8 B195 22.0 12.3 214 24.0 13.4 220 25.0 13.9 319 21.5 12.0 355 22.0 12.3 356 21.5 12.0 360 21.0 11.7 750 23.1 12.9 40E 24.7 13.8 COPPER AND COPPER ALLOYS Wrought Coppers Pure Copper 16.5 9.2 Electrolytic Tough Pitch Copper (ETP) 16.8 9.4 Deoxidized Copper, High Residual Phosphorous (DHP) 17.7 9.9 Oxygen-Free Copper 17.7 9.9 Free-Machining Copper 0.5% Te or 1% Pb 17.7 9.9 User’s Manual 17-3 Chapter 17 Material Expansion Coefficients Linear Thermal Expansion Coefficients of Metals and Alloys Table 17-1. -
Standard Cells: Their Construction, Maintenance, and Characteristics
NBS MONOGRAPH 84 Standard Cells Their Construction, Maintenance, And Characteristics U.S. DEPARTMENT OF COMMERCE NATIONAL BUREAU OF STANDARDS THE NATIONAL BUREAU OF STANDARDS The National Bureau of Standards is a principal focal point in the Federal Government for assur- ing maxinmm application of the physical and engineering sciences to the advancement of technology in industry and commerce. Us responsibilities include development and maintenance of the national standards of measurement, and the provisions of means for making measurements consistent with tliose standards; determination of physical constants and properties of materials; development of methods for testing materials, meciianisms, and structures, and making such tests as may be neces- sary, particularly for government agencies; cooperation in the establishment of standard practices for incorporation in codes and specifications; advisory service to government agencies on scientific and technical problems; invention and development of devices to serve special needs of the Government; assistance to industry, business, and consumers in the development and acceptance of commercial standards and simplified trade practice recommendations; administration of programs in cooperation w ith Lnited States business groups and standards organizations for the development of international standards of practice: and maintenance of a clearinghouse for the collection and dissemination of scientific, technical, and engineering information. The scope of the Bureau's activities is suggested in the following listing of its four Institutes and their organizational units. Institute for Basic Standards. Electricity. Metrology. Heat. Radiation Physics. Me- chanics. Applied Mathematics. Atomic Physics. Physical Chemistry. Laboratory Astrophysics.* Radio Standards Laboratory: Radio Standards Physics; Radio Standards Engineering.** Office of Standard Reference Data. Institute for -Materials Research. -
Research of Piezo-Resistive and Piezoelectric Sensor Sanming Feng A
3rd International Conference on Mechatronics and Industrial Informatics (ICMII 2015) Research Of Piezo-resistive And Piezoelectric Sensor a b,* c Sanming Feng ,Wenjie Tian , Bo Ma Beijing Information Science and Technology University 100101,Beijing,China [email protected], b [email protected], [email protected] * Corresponding Author Keywords: pressure sensor; tantalum nitride; PVDF; circuit Abstract. The basic principle and application of piezo-resistive and piezoelectric are expounded. Also the method of deposition of tantalum nitride on the glass to fabricate piezo-resistive pressure sensor, and the method of a plurality of piezoelectric thin film in parallel to form a high sensitivity sensor are introduced. Besides, a power supply circuit and corresponding processing circuit are designed. The output voltage of the piezo-resistive pressure sensor is liner with respect to the pressure. The output of the charge is liner with the pressure of piezoelectric sensor first, then tends to saturation and presents less change. The sensitivity of piezoelectric sensor is up to 103 orders of magnitude, with a higher sensitivity. Introduction Sensor is the first threshold of the information system, which is responsible for collecting information. Sensor technology, communication technology and computer technology have become the three pillars of modern information technology [1], is an important basis for the information industry, so the importance of sensor technology is self-evident. At present, the sensor industry in China is small, and the application scope is narrow. Therefore, we need to change the concept, the research and development of the sensor is developed by a single sensor, which is transformed into a new type of high integration.