Saturable Absorber Mirrors For Passive Mode-locking R. Hohmuth1 3, G. Paunescu2, J. Hein2, C. H. Lange3, W. Richter1 3, 1 Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena, Germany, tel: +493641947444, fax: +493641947442,
[email protected] 2 Institut fuer Optik und Quantenelektronik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena, Germany 3 BATOP GmbH, Th.-Koerner-Str. 4, 99425 Weimar, Germany Introduction Saturable Absorber Mirror (SAM) Saturable absorber mirrors (SAMs) are inexpensive and schematic laser set-up compact devices for passive mode-locking of diode pumped solid state lasers. Such laser systems can provide ultrashort cavity, length L -cavity with gain medium pulse trains with high repetition rates. Typical values for pulse pulse -high reflective mirror and TRT=2L/c ) t output mirror with partially ( duration ranging from 100 fs up to 10 ps. For instance a I y t transmission i s Nd:YAG laser can be mode-locked with pulse duration of 8 ps n e -saturable absorber as t n and mean output power of 6 W. I modulator On this poster we present results for a Yb: KYW laser passive =>pulse trains spaced by mode-locked by SAMs with three different modulation depths round-trip time TRT=2L/c time t between 0.6% and 2.0%. SAMs were prepared by solid- gain medium high reflective mirror (pumped e.g. output mirror source molecular beam epitaxy with a low-temperature (LT) with saturable absorber by laser diode) (SAM) grown InGaAs absorbing quantum well. LT InGaAs quantum well SAM design SAM reflection spectrum Ta O or SiO / dielectric cover Requirements for passive mode- 25 2 conduction 71.2 nm GaAs / barrier E 7 nm c1 71.2 nm GaAs / barrier locking band Ec LT InGaAs 74.7 nm GaAs The mode-locking regime is stable agaist the onset of quantum well InGaAs 88.4 nm AlAs multiple pulsing as long as the pulse duration is smaller energy : 25x Bragg mirror than t .