Supercharge Your Applications with Samsung High Bandwidth Memory
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Performance Impact of Memory Channels on Sparse and Irregular Algorithms
Performance Impact of Memory Channels on Sparse and Irregular Algorithms Oded Green1,2, James Fox2, Jeffrey Young2, Jun Shirako2, and David Bader3 1NVIDIA Corporation — 2Georgia Institute of Technology — 3New Jersey Institute of Technology Abstract— Graph processing is typically considered to be a Graph algorithms are typically latency-bound if there is memory-bound rather than compute-bound problem. One com- not enough parallelism to saturate the memory subsystem. mon line of thought is that more available memory bandwidth However, the growth in parallelism for shared-memory corresponds to better graph processing performance. However, in this work we demonstrate that the key factor in the utilization systems brings into question whether graph algorithms are of the memory system for graph algorithms is not necessarily still primarily latency-bound. Getting peak or near-peak the raw bandwidth or even the latency of memory requests. bandwidth of current memory subsystems requires highly Instead, we show that performance is proportional to the parallel applications as well as good spatial and temporal number of memory channels available to handle small data memory reuse. The lack of spatial locality in sparse and transfers with limited spatial locality. Using several widely used graph frameworks, including irregular algorithms means that prefetched cache lines have Gunrock (on the GPU) and GAPBS & Ligra (for CPUs), poor data reuse and that the effective bandwidth is fairly low. we evaluate key graph analytics kernels using two unique The introduction of high-bandwidth memories like HBM and memory hierarchies, DDR-based and HBM/MCDRAM. Our HMC have not yet closed this inefficiency gap for latency- results show that the differences in the peak bandwidths sensitive accesses [19]. -
ECTC 2021 Conference Program
WELCOME TO THE 71st ECTC FROM THE GENERAL CHAIR AND PROGRAM CHAIR On behalf of the Program Committee and Executive ECTC will also feature a record twelve special sessions with Committee, it is our pleasure to welcome you to the 71st invited industry experts covering several important and Electronic Components and Technology Conference (ECTC), emerging topic areas. Rozalia Beica and Ed Sperling will chair which will be held virtually on a digital platform from June 1 a special session covering “Market Trends and Geopolitical until July 4, 2021. This premier international conference brings and Economic Outlook” addressing market trends in the together key stakeholders of the global microelectronics semiconductor industry, emerging applications, economic and packaging industry, such as semiconductor companies, foundry geopolitical uncertainties, and impact on the global supply chain and OSAT service providers, equipment manufacturers, in microelectronics packaging. The ECTC Panel Session will be materials suppliers, research institutions and universities all chaired by IEEE EPS President Christopher Bailey and IEEE EPS under one roof. Vice President of Conferences Sam Karikalan. This panel session The virtual platform will allow for recorded presentations of all will hear from several leading companies who will discuss their technical session talks to be available on-demand throughout future vision for advanced electronics packaging. the conference. During the last two weeks of the conference, We are continuing our tradition and bringing back the a live teleconferencing meeting for each session will be held networking events focused on young professionals and diversity. by the session chairs; all the presenters of the session will be Yan Liu and Adeel Bajwa will chair the Young Professionals available live to field questions from the attendees. -
Product Guide SAMSUNG ELECTRONICS RESERVES the RIGHT to CHANGE PRODUCTS, INFORMATION and SPECIFICATIONS WITHOUT NOTICE
May. 2018 DDR4 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or other- wise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. © 2018 Samsung Electronics Co., Ltd. All rights reserved. - 1 - May. 2018 Product Guide DDR4 SDRAM Memory 1. DDR4 SDRAM MEMORY ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 K 4 A X X X X X X X - X X X X SAMSUNG Memory Speed DRAM Temp & Power DRAM Type Package Type Density Revision Bit Organization Interface (VDD, VDDQ) # of Internal Banks 1. SAMSUNG Memory : K 8. Revision M: 1st Gen. A: 2nd Gen. 2. DRAM : 4 B: 3rd Gen. C: 4th Gen. D: 5th Gen. -
PATENT PLEDGES Jorge L. Contreras*
PATENT PLEDGES Jorge L. Contreras* ABSTRACT An increasing number of firms are making public pledges to limit the enforcement of their patents. In doing so, they are entering a little- understood middle ground between the public domain and exclusive property rights. The best-known of these patent pledges are FRAND commitments, in which patent holders commit to license their patents to manufacturers of standardized products on terms that are “fair, reasonable and non-discriminatory.” But patent pledges have been appearing in settings well beyond standard-setting, including open source software, green technology and the life sciences. As a result, this increasingly prevalent private ordering mechanism is beginning to reshape the role and function of patents in the economy. Despite their proliferation, little scholarship has explored the phenomenon of patent pledges beyond FRAND commitments and standard- setting. This article fills this gap by providing the first comprehensive descriptive account of patent pledges across the board. It offers a four-part taxonomy of patent pledges based on the factors that motivate patent holders to make them and the effect they are intended to have on other market actors. Using this classification system, it argues that pledges likely to induce reliance in other market actors should be treated as “actionable” * Associate Professor, S.J. Quinney College of Law, University of Utah and Senior Policy Fellow, American University Washington College of Law. The author thanks Jonas Anderson, Clark Asay, Marc Sandy Block, Mark Bohannon, Matthew Bye, Michael Carrier, Michael Carroll, Colleen Chien, Thomas Cotter, Carter Eltzroth, Carissa Hessick, Meredith Jacob, Jay Kesan, Anne Layne-Farrar, Irina Manta, Sean Pager, Gideon Parchomovsky, Arti Rai, Amelia Rinehart, Cliff Rosky, Daniel Sokol and Duane Valz for their helpful comments, suggestions and discussion of this article and contributions of data to the Patent Pledge Database at American University. -
Sandisk Sdinbdg4-8G
Data Sheet - Confidential DOC-56-34-01460• Rev 1.4 • August 2017 Industrial iNAND® 7250 e.MMC 5.1 with HS400 Interface Confidential, subject to all applicable non-disclosure agreements www.SanDisk.com SanDisk® iNAND 7250 e.MMC 5.1+ HS400 I/F data sheet Confidential REVISION HISTORY Doc. No Revision Date Description DOC-56-34-01460 0.1 October-2016 Preliminary version DOC-56-34-01460 0.2 January-2017 Updated tables 2, 5 and 6 DOC-56-34-01460 1.0 March-2017 Released version DOC-56-34-01460 1.1 May-2017 Updated SKU names DOC-56-34-01460 1.2 June-2017 Updated performance targets, SKU ID in ext_CSD DOC-56-34-01460 1.3 July-2017 Updated ext_CSD MAX_ENH_SIZE_MULT DOC-56-34-01460 1.4 August-2017 Updated drawing marking SanDisk® general policy does not recommend the use of its products in life support applications where in a failure or malfunction of the product may directly threaten life or injury. Per SanDisk Terms and Conditions of Sale, the user of SanDisk products in life support applications assumes all risk of such use and indemnifies SanDisk against all damages. See “Disclaimer of Liability.” This document is for information use only and is subject to change without prior notice. SanDisk assumes no responsibility for any errors that may appear in this document, nor for incidental or consequential damages resulting from the furnishing, performance or use of this material. No part of this document may be reproduced, transmitted, transcribed, stored in a retrievable manner or translated into any language or computer language, in any form or by any means, electronic, mechanical, magnetic, optical, chemical, manual or otherwise, without the prior written consent of an officer of SanDisk . -
Advanced Semiconductor Engineering, Inc
Advanced Semiconductor Engineering, Inc. FOR IMMEDIATE RELEASE Contact: ASE, Inc. Joseph Tung, CFO / Vice President Freddie Liu, Assistant Vice President Room 1901, No. 333, Section 1 Keelung Road, Taipei, Taiwan, 110 [email protected] Tel: + 886-2-8780-5489 http://www.aseglobal.com Fax: + 886-2-2757-6121 ADVANCED SEMICONDUCTOR ENGINEERING, INC. REPORTS YEAR 2002 FIRST-QUARTER FINANCIAL RESULTS Taipei, Taiwan, R.O.C., April 24, 2002 – Advanced Semiconductor Engineering, Inc. (TAIEX: 2311, NYSE: ASX), (“ASE”, or the “Company”), one of the world’s largest independent providers of semiconductor packaging and testing services, today reported quarterly sales of NT$10,044 million, down 2% sequentially and down 11% versus a year ago period. Net loss amounted to NT$230 million in the first quarter ended March 31, 2002. Fully diluted loss per share for the quarter was NT$0.07, or US$0.01 per ADS. “We believed that we are off to a good start in the first quarter of this year as our revenues exceeded the normal seasonal pattern.” commented Mr. Jason Chang, Chairman of ASE Group. “We have seen demand for our advanced assembly and test capacity continued to grow in a very healthy momentum, and the strength came from across all end markets in a wide customer base. The product generation change and introduction of new devices by our customers shall be the major driving forces for our business in the first half of this year. The utilization rate of our advanced assembly and test capacity shall remain at a high level this quarter as output of finer geometry wafers continues to rise. -
Access Order and Effective Bandwidth for Streams on a Direct Rambus Memory Sung I
Access Order and Effective Bandwidth for Streams on a Direct Rambus Memory Sung I. Hong, Sally A. McKee†, Maximo H. Salinas, Robert H. Klenke, James H. Aylor, Wm. A. Wulf Dept. of Electrical and Computer Engineering †Dept. of Computer Science University of Virginia University of Utah Charlottesville, VA 22903 Salt Lake City, Utah 84112 Abstract current DRAM page forces a new page to be accessed. The Processor speeds are increasing rapidly, and memory speeds are overhead time required to do this makes servicing such a request not keeping up. Streaming computations (such as multi-media or significantly slower than one that hits the current page. The order of scientific applications) are among those whose performance is requests affects the performance of all such components. Access most limited by the memory bottleneck. Rambus hopes to bridge the order also affects bus utilization and how well the available processor/memory performance gap with a recently introduced parallelism can be exploited in memories with multiple banks. DRAM that can deliver up to 1.6Gbytes/sec. We analyze the These three observations — the inefficiency of traditional, performance of these interesting new memory devices on the inner dynamic caching for streaming computations; the high advertised loops of streaming computations, both for traditional memory bandwidth of Direct Rambus DRAMs; and the order-sensitive controllers that treat all DRAM transactions as random cacheline performance of modern DRAMs — motivated our investigation of accesses, and for controllers augmented with streaming hardware. a hardware streaming mechanism that dynamically reorders For our benchmarks, we find that accessing unit-stride streams in memory accesses in a Rambus-based memory system. -
Big Data, AI, and the Future of Memory
Big Data, AI, and the Future of Memory Steven Woo Fellow and Distinguished Inventor, Rambus Inc. May 15, 2019 Memory Advancements Through Time 1990’s 2000’s 2010’s 2020’s Synchronous Memory Graphics Memory Low Power Memory Ultra High Bandwidth for PCs for Gaming for Mobile Memory for AI Faster Compute + Big Data Enabling Explosive Growth in AI 1980s Annual Size of the Global Datasphere – 1990s Now 175 ZB More 180 Accuracy Compute Neural Networks 160 140 120 Other Approaches 100 Zettabytes 80 60 40 20 Scale (Data Size, Model Size) 2010 2015 2020 2025 Source: Adapted from Jeff Dean, “Recent Advances in Artificial Intelligence and the Source: Adapted from Data Age 2025, sponsored by Seagate Implications for Computer System Design,” HotChips 29 Keynote, August 2017 with data from IDC Global DataSphere, Nov 2018 Key challenges: Moore’s Law ending, energy efficiency growing in importance ©2019 Rambus Inc. 3 AI Accelerators Need Memory Bandwidth Google TPU v1 1000 TPU Roofline Inference on newer silicon (Google TPU K80 Roofline HSW Roofline v1) built for AI processing largely limited LSTM0 by memory bandwidth LSTM1 10 MLP1 MLP0 v nVidia K80 CNN0 Inference on older, general purpose Intel Haswell CNN1 hardware (Haswell, K80) limited by LSTM0 1 LSTM1 compute and memory bandwidth TeraOps/sec (log scale) (log TeraOps/sec MLP1 MLP0 CNN0 0.1 CNN1 LSTM0 1 10 100 1000 Memory bandwidth is a critical LSTM1 Ops/weight byte (log scale) resource for AI applications = Google TPU v1 = nVidia K80 = Intel Haswell N. Jouppi, et.al., “In-Datacenter Performance Analysis of a Tensor Processing Unit™,” https://arxiv.org/ftp/arxiv/papers/1704/1704.04760.pdf ©2019 Rambus Inc. -
CY3672-USB Clock Programming Kit
CY3672-USB Clock Programming Kit Features Functional Description ■ Supports these field-programmable clock generators: The CY3672-USB programming kit enables any user with a PC CY2077FS, CY2077FZ, CY22050KF, CY22150KF, CY22381F, to quickly and easily program Field-programmable Clock CY22392F, CY22393F, CY22394F, CY22395F, CY23FP12, Generators. The only setup requirements are a power CY25100ZXCF/IF, CY25100SXCF/IF, CY25200KF, connection and a USB port connection with the PC, as shown in CY25701FLX Figure 2. ■ Allows quick and easy prototyping Using CyClockWizard software, users can configure their parts to a given specification and generate the corresponding JEDEC ® ® ■ Easy to use Microsoft Windows 95, 98, NT, 2K, ME, file. XP-compatible interface The JEDEC file is then loaded into CY3672-USB software that ■ User-friendly CyClockWizard™ software for JEDEC file devel- communicates with the programmer. The CY3672-USB software opment has the ability to read and view the EPROM table from a programmed device. The programming flow is outlined in CY3672-USB Kit Contents Figure 1. ■ CY3672 programmer base unit Setup ■ CD ROM with CY3672 software and USB driver Hardware ■ USB cable The CY3672-USB programming kit has a simple setup ■ AC/DC power adapter procedure. A socket adapter must be inserted into the CY3672 base unit. Available socket adapters are listed in Table 1, and are ■ User’s manual ordered separately. No socket adapters are included in the CY3672-USB Clock Programming Kit. As shown in Figure 2, only two connections are required. The programmer connects to a PC through a USB cable, and receives power through the AC/DC adapter that connects to a standard 110 V/220 V wall outlet. -
Advanced Semiconductor Engineering, Inc. 2003 Annual Report
Stock Code: 2311 NYSE: ASX Advanced Semiconductor Engineering, Inc. 2003 Annual Report March 26, 2004 This report is available on the following websites: 1. Market Observation Post System:http://mops.tse.com.tw/ 2. ASE website:http://www.aseglobal.com Summary Translation Spokesperson: Richard H. P. Chang Title: Vice Chairman and President Acting Spokespersons: Joseph Tung Title: Chief Financial Officer Freddie Liu Title: Director, Financial Division Tel: 886-2-87805489 E-mail: [email protected] Head Office Taipei Office Address: 26 Chin 3rd Rd., N.E.P.Z., Nantz, Room 1901, F19, 333 Keelung Road, Kaohsiung, Taiwan Section 1, Taipei, Taiwan Tel: 886-7-3617131~8 886-2-87805489 Fax: 886-7-3613094、 3614546 886-2-27576121 Website: http://www.aseglobal.com Plant Facilities: (Tel:886-7-3617131) Plant 1: 26 Chin 3rd Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 2: F7 ~ 10, 66 Chin 6th Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 3: F2, 47 Kai Fa Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 4: F3, 47 Kai Fa Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 5: F4 ~ 6, 66 Chin 6th Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 6: F1 & F4, 47 Kai Fa Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 7: F2 ~ 3, 66 Chin 6th Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 8: 25 Kai Fa Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 9: F8, 109 Nei Huan N. Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 10: F10, 109 Nei Huan N. -
Case Study on Integrated Architecture for In-Memory and In-Storage Computing
electronics Article Case Study on Integrated Architecture for In-Memory and In-Storage Computing Manho Kim 1, Sung-Ho Kim 1, Hyuk-Jae Lee 1 and Chae-Eun Rhee 2,* 1 Department of Electrical Engineering, Seoul National University, Seoul 08826, Korea; [email protected] (M.K.); [email protected] (S.-H.K.); [email protected] (H.-J.L.) 2 Department of Information and Communication Engineering, Inha University, Incheon 22212, Korea * Correspondence: [email protected]; Tel.: +82-32-860-7429 Abstract: Since the advent of computers, computing performance has been steadily increasing. Moreover, recent technologies are mostly based on massive data, and the development of artificial intelligence is accelerating it. Accordingly, various studies are being conducted to increase the performance and computing and data access, together reducing energy consumption. In-memory computing (IMC) and in-storage computing (ISC) are currently the most actively studied architectures to deal with the challenges of recent technologies. Since IMC performs operations in memory, there is a chance to overcome the memory bandwidth limit. ISC can reduce energy by using a low power processor inside storage without an expensive IO interface. To integrate the host CPU, IMC and ISC harmoniously, appropriate workload allocation that reflects the characteristics of the target application is required. In this paper, the energy and processing speed are evaluated according to the workload allocation and system conditions. The proof-of-concept prototyping system is implemented for the integrated architecture. The simulation results show that IMC improves the performance by 4.4 times and reduces total energy by 4.6 times over the baseline host CPU. -
Download Attachment
NON-CONFIDENTIAL 2010-1556 UNITED STATES COURT OF APPEALS FOR THE FEDERAL CIRCUIT ASUSTEK COMPUTER INC., ASUS COMPUTER INTERNATIONAL, INC., BFG TECHNOLOGIES, INC., BIOSTAR MICROTECH (U.S.A.) CORP., BIOSTAR MICROTECH INTERNATIONAL CORP., DIABLOTEK, INC., EVGA CORP., G.B.T., INC., GIGA-BYTE TECHNOLOGY CO., LTD., HEWLETT-PACKARD COMPANY, MSI COMPUTER CORP., MICRO-STAR INTERNATIONAL COMPANY, LTD., GRACOM TECHNOLOGIES LLC (FORMERLY KNOWN AS PALIT MULTIMEDIA, INC.), PALIT MICROSYSTEMS LTD., PINE TECHNOLOGY (MACAO COMMERCIAL OFFSHORE) LTD., AND SPARKLE COMPUTER COMPANY, LTD. Appellants, — v. — INTERNATIONAL TRADE COMMISSION, Appellee, and RAMBUS, INC., Intervenor, and NVIDIA CORPORATION, Intervenor. ______________ 2010-1557 ______________ NVIDIA CORPORATION, Appellant, — v. — INTERNATIONAL TRADE COMMISSION, Appellee, and RAMBUS, INC., Intervenor. ______________ ON APPEAL FROM THE UNITED STATES INTERNATIONAL TRADE COMMISSION IN INVESTIGATION NO. 337-TA-661 ______________ NON-CONFIDENTIAL REPLY BRIEF OF APPELLANTS NVIDIA CORPORATION ET AL. _______________ *Caption Continued on Next Page COMPANION CASES TO: 2010-1483 RAMBUS, INC., Appellant, — v. — INTERNATIONAL TRADE COMMISSION, Appellee, and NVIDIA CORPORATION ET AL., Intervenors. ______________ RUFFIN B. CORDELL I. NEEL CHATTERJEE MARK S. DAVIES ANDREW R. KOPSIDAS RICHARD S. SWOPE RACHEL M. MCKENZIE FISH & RICHARDSON P.C. NITIN GAMBHIR LAUREN J. PARKER 1425 K Street, NW, 11th Floor ORRICK, HERRINGTON ORRICK, HERRINGTON Washington, DC 20005 & SUTCLIFFE LLP & SUTCLIFFE LLP Tel. No. 202-626-6449