Volume 3 Issue 2: Preparation of Cast Aluminum-Silicon Alloys
Total Page:16
File Type:pdf, Size:1020Kb
Load more
Recommended publications
-
Metallography – a Powerful Instrument for Material Characterisation, Material Development and Failure Analysis
771 Microsc. Microanal. 21 (Suppl 3), 2015 doi:10.1017/S1431927615004651 Paper No. 0386 © Microscopy Society of America 2015 Metallography – A Powerful Instrument for Material Characterisation, Material Development and Failure Analysis Michael Panzenböck1, Francisca Mendez-Martin1, Boryana Rashkova1, Patric Schütz1 1. Department of Physical Metallurgy and Materials Testing, Montanuniversität Leoben, Austria A. Widmanstätten (1754-1849) was one of the first scientists who developed techniques for studying the microstructure of meteorites by grinding and etching them with nitric acid. Also H.C. Sorby (1826- 1908) used such methods for microstructural investigations of minerals and rocks to identify their origin, as well as to examine steels and meteorites. Other famous and nowadays well known researchers such as R. Hadfield (1858—1940), A. Martens (1850-1914), E.C. Bains (1891-1971), K.H. Ledebur (1837- 1906), and H. Brearley (1871-1948) further developed these basic methods to get more information about the microstructure, especially in case of steels. Many microstructural parts or phases of the Fe- Fe3C phase diagram are called in honour of these scientists, e.g., “Widmanstätten ferrite”, “Sorbite”, “Bainite”, “Martensite”, or in case of cast iron “Ledeburite”. Without doubt, a material’s microstructure is decisive, because it is the arrangement, size and distribution of different phases which is responsible for the mechanical properties such as strength, ductility and toughness. In order to develop high-performance materials for existing and new applications it is necessary to establish a basic understanding of the material behaviour or its response under service loads. In addition to the standard methods such as light microscopy (LM), scanning electron microscopy (SEM), focused ion beam (FIB), also high-resolution methods (transmission electron microscopy (TEM), atom probe tomography (APT)) have been developed over the last three decades. -
Carbothermal Synthesis of Silicon Nitride
Carbothermal Synthesis of Silicon Nitride Xiaohan Wan A thesis in fulfilment of the requirements for the degree of Doctor of Philosophy School of Materials Science and Engineering Faculty of Science March 2013 THE UNIVERSITY OF NEW SOUTH WALES Thesis/Dissertation Sheet Surname or Family name: Wan First name: Xiaohan Other name/s: Abbreviation for degree as given in the University calendar: PhD School: Materials Science and Engineering Faculty: Science Title: Carbothermal synthesis of silicon nitride Abstract 350 words maximum Carbothermal synthesis of silicon nitride Si3N4 followed by decomposition of Si3N4 is a novel approach to production of solar-grade silicon. The aim of the project was to study reduction/nitridation of silica under different conditions and to establish mechanism of silicon nitride formation. Carbothermal reduction of quartz and amorphous silica was investigated in a fixed bed reactor at 1300-1650 °C in nitrogen at 1-11 atm pressure and in hydrogen-nitrogen mixtures at atmospheric pressure. Samples were prepared from silica-graphite mixtures in the form of pellets. Carbon monoxide evolution in the reduction process was monitored using an infrared sensor; oxygen, nitrogen and carbon contents in reduced samples were determined by LECO analyses. Phases formed in the reduction process were analysed by XRD. Silica was reduced to silicon nitride and silicon carbide; their ratio was dependent on reduction time, temperature and nitrogen pressure. Reduction products also included SiO gas which was removed from the pellet with the flowing gas. In the experiments, reduction of silica started below 1300 °C; the reduction rate increased with increasing temperature. Silicon carbide was the major reduction product at the early stage of reduction; the fraction of silicon nitride increased with increasing reaction time. -
The Development of the Periodic Table and Its Consequences Citation: J
Firenze University Press www.fupress.com/substantia The Development of the Periodic Table and its Consequences Citation: J. Emsley (2019) The Devel- opment of the Periodic Table and its Consequences. Substantia 3(2) Suppl. 5: 15-27. doi: 10.13128/Substantia-297 John Emsley Copyright: © 2019 J. Emsley. This is Alameda Lodge, 23a Alameda Road, Ampthill, MK45 2LA, UK an open access, peer-reviewed article E-mail: [email protected] published by Firenze University Press (http://www.fupress.com/substantia) and distributed under the terms of the Abstract. Chemistry is fortunate among the sciences in having an icon that is instant- Creative Commons Attribution License, ly recognisable around the world: the periodic table. The United Nations has deemed which permits unrestricted use, distri- 2019 to be the International Year of the Periodic Table, in commemoration of the 150th bution, and reproduction in any medi- anniversary of the first paper in which it appeared. That had been written by a Russian um, provided the original author and chemist, Dmitri Mendeleev, and was published in May 1869. Since then, there have source are credited. been many versions of the table, but one format has come to be the most widely used Data Availability Statement: All rel- and is to be seen everywhere. The route to this preferred form of the table makes an evant data are within the paper and its interesting story. Supporting Information files. Keywords. Periodic table, Mendeleev, Newlands, Deming, Seaborg. Competing Interests: The Author(s) declare(s) no conflict of interest. INTRODUCTION There are hundreds of periodic tables but the one that is widely repro- duced has the approval of the International Union of Pure and Applied Chemistry (IUPAC) and is shown in Fig.1. -
The Preparation and Reactions of the Lower Chlorides and Oxychlorides of Silicon Joseph Bradley Quig Iowa State College
Iowa State University Capstones, Theses and Retrospective Theses and Dissertations Dissertations 1926 The preparation and reactions of the lower chlorides and oxychlorides of silicon Joseph Bradley Quig Iowa State College Follow this and additional works at: https://lib.dr.iastate.edu/rtd Part of the Inorganic Chemistry Commons Recommended Citation Quig, Joseph Bradley, "The preparation and reactions of the lower chlorides and oxychlorides of silicon " (1926). Retrospective Theses and Dissertations. 14278. https://lib.dr.iastate.edu/rtd/14278 This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. INFORMATION TO USERS This manuscript has been reproduced from the microfilm master. UlVli films the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be from any type of computer printer. The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and impiroper alignment can adversely affect reproduction. In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized copyright material had to be removed, a note will indicate the deletion. Oversize materials (e.g., maps, drawings, charts) are reproduced by sectioning the original, beginning at the upper left-hand corner and continuing from left to right in equal sections with small overiaps. -
Met-Manual-2B.Pdf
1 2 METALLOGRAPHIC HANDBOOK Donald C. Zipperian, Ph.D. Chief Technical Officier PACE Technologies Tucson, Arizona USA Copyright 2011 by PACE Technologies, USA No part of this manual may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means, electronic, mechanical, photocopying, recording, or otherwise, without the written permission of the copyright owner. First printing, 2011 3 Great care is taken in the compilation and production of this book, but it should be made clear that NO WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, WARRANTIES OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, ARE GIVEN IN CONNECTION WITH THIS PUBLICATION. Although this information is believed to be accurate by PACE Technologies, PACE Technologies cannot guarantee that favorable results will be obtained from the use of this publication alone. This publication is intended for use by persons having technical skill, at their sole discretion and risk. Since the conditions of product or material use are outside of PACE Technologies control, PACE Technologies assumes no liability or obligation in connection with any use of this information. No claim of any kind, whether as to products or information in this publication, and whether or not based on negligence, shall be greater in amount than the purchase price of this product or publication in respect of which damages are claimed. THE REMEDY HEREBY PROVIDED SHALL BE THE EXCLUSIVE AND SOLE REMEDY OR BUYER, AND IN NO EVENT SHALL EITHER PARTY BE LIABLE FOR SPECIAL, INDIRECT OR CONSEQUENTIAL DAMAGES WHETHER OR NOT CAUSED BY OR RESULTING FROM THE NEGLIGENCE OF SUCH PARTY. -
Metallographic Preparation 2009
Inc. DRP Ventures Division METALLOGRAPHIC PREPARATION 2009 y Copyright DRP Ventures Inc. 2007 2008 Division DRP Ventures Inc. # We would like to welcome the opportunity to introduce our latest catalogue. It provides an increasing range of quality products in abrasive cutting, mounting, grinding and polishing. ANAMET Sales and Technical Services are supported by competent and motivated personnel who continue to make every effort to earn and maintain your trust. They are committed to serving their customers by providing sample preparation supplies and offering assistance in improving their metallographic procedures. Over the years, ANAMET has been meeting the requirements of many industries such as aerospace, automotive, ceramics, composites disk drives, electro-optical materials, electronics, geological services, metal converters, metal powders, foundries, mineralogy, optics, plastics, primary and secondary metals, printed circuits, pulp industry, semiconductor substrates, tolls, mold and die finishing, educational institutions and nanotechnology. We thank you for being at the heart of our commitment and look forward to a continued relationship. Our dedication for excellence begins with our commitment in providing you with only the very best. Sincerely, Diane R. Pilley , B.Sc. ANAMET Division DRP Ventures Inc. 655 Jean-Paul Vincent, Suite 9, Longueuil, Qc, Canada J4G 1R3 • Tel: 450.646.1290 • Fax: 450.646.4309 • E-mail: [email protected] • Website: www.anamet.com Î ORDERING INFORMATION ON THE NEXT PAGE Í SECTIONING Abrasive Cut-Off Wheels. 1 Small Abrasive Cut-Off Wheels. 8 Diamond Cut-Off Wheels. 9 Wafering Diamond Wheels. 10 Cubic Boron Nitride. 11 Sectioning Accessories. 12 MOUNTING Compression Mounting. 13 Ambient Mounting. 16 Castable Mounting Accessories. -
Unit 2 Matter and Chemical Change
TOPIC 5 The Periodic Table By the 1850s, chemists had identified a total of 58 elements, and nobody knew how many more there might be. Chemists attempted to create a classification system that would organize their observations. The various “family” systems were useful for some elements, but most family relationships were not obvious. What else could a classification system be based on? By the 1860s several scientists were trying to sort the known elements according to atomic mass. Atomic mass is the average mass of an atom of an element. According to Dalton’s atomic theory, each element had its own kind of atom with a specific atomic mass, different from the Figure 2.31 Dmitri atomic mass of any other elements. One scientist created a system that Ivanovich Mendeleev was so accurate it is still used today. He was a Russian chemist named was born in Siberia, the Dmitri Mendeleev (1834–1907). youngest of 17 children. Mendeleev Builds a Table Mendeleev made a card for each known element. On each card, he put data similar to the data you see in Figure 2.32. Figure 2.32 The card above shows modern values for silicon, rather than the ones Mendeleev actually used. His values were surprisingly close to modern ones. The atomic mass measurement indicates that silicon is 28.1 times heavier than hydrogen. You can observe other properties of silicon in Figure 2.33. Mendeleev pinned all the cards to the wall, in order of increasing atomic mass. He “played cards” for several Figure 2.33 The element silicon is melted months, arranging the elements in vertical columns and and formed into a crystal. -
Metallographic Sample Preparation Techniques
Materials Characterization 1ecliniques-Principle s and Applications Eds : G. Sridliar; S. Ghosh Chowdhurv & N. G. Goswanri NML. Janislredpur-83100711999) pp. 163-176 Metallographic Sample Preparation Techniques SAMAR DAS National Metallurgical Laboratory, Jamshedpur-831007 E-mail : [email protected] ABS'T'RACT Microstructure plays an important role in controlling the properties in metals and allcrvs. Hence i nicrostructu•al study called metallographv has been extensively used for materials selection, failure investigation and materials development. The microstructure of metals are com- monly observed under optical and/or electron microscopes, though other types of microscopes have been developed for specific uses. For any microscopic observation, the preparation of proper sample, which reveals the true microstructure is of prima ti, importance. Numerous and diverse techniques have been developed not only to suit the ma- terial but also for the type of microscope to be used. The techniques also vary with the details to be observed. It is difficult to prepare a comprehensive survey of the techniques developed and practised to- day. An attempt has been made here, to briefly discuss the most corn- monly used specimen preparation techniques for optical, scanning electron and transmission electron microscopy together with their merits and demerits. Any specimen preparation method involves several steps. Proper care in each step is essential to avoid difficulty in the subse- quent steps and to reveal the true microstructure. The choice of a technique depends mainly on the materials, the detail required to be observed and the type of microscope to be used. INTRODUCTION The study of microstructural details of metals and alloys is termed as metal- lography.z The microstructure of steel was first observed by H.C. -
Metallographic Etching
Metallographic Etching 2nd Edition By Günter Petzow In collaboration with Veronika Carle Translated by Uta Harnisch Techniques for Metallography Ceramography Plastography Contents Preface to the German Edition . VIII Preface . IX Introduction . 1 1 Metallography . 7 1.1 Preparation of Metallographic Specimens . 7 1.2 Specimen Sectioning . 8 1.3 Mounting. 11 1.3.1 Clamping . 12 1.3.2 Embedding . 13 1.3.3 Special Mounting Techniques . 15 1.4 Identification (Marking). 18 1.5 Grinding and Polishing . 18 1.5.1 Mechanical Grinding and Polishing . 19 1.5.2 Microtome Cutting and Ultramilling . 29 1.5.3 Electrolytic Grinding and Polishing . 30 1.5.4 Chemical Polishing . 34 1.5.5 Combined Polishing Methods . 34 1.5.6 Evaluation of Polishing Methods . 36 1.6 Cleaning . 37 1.7 Metallographic Etching . 38 1.7.1 Optical Etching . 39 1.7.2 Electrochemical (Chemical) Etching . 40 1.7.3 Physical Etching . 44 1.7.4 Etching Reproducibility . 45 1.7.5 Etching Terminology . 47 1.7.6 Definitions of Etching Terms . 47 1.8 Field Metallography/Nondestructive Metallography. 50 1.9 Preparation and Etching Recipes for Metallic Materials . 51 1.9.1 Silver . 53 1.9.2 Aluminum . 57 1.9.3 Gold . 64 v 1.9.4 Beryllium. 67 1.9.5 Bismuth and Antimony . 70 1.9.6 Cadmium, Indium, and Thallium . 72 1.9.7 Cobalt . 75 1.9.8 Refractory Metals (Chromium, Molybdenum, Niobium, Rhenium, Tantalum, Vanadium, and Tungsten) . 80 1.9.9 Copper. 88 1.9.10 Iron, Steel, and Cast Iron . 94 1.9.11 Semiconductors (Germanium, Silicon, Selenium, Tellurium, AIIIBVI, and AIIBVI Compounds). -
Directed Gas Phase Formation of Silicon Dioxide and Implications for the Formation of Interstellar Silicates
ARTICLE DOI: 10.1038/s41467-018-03172-5 OPEN Directed gas phase formation of silicon dioxide and implications for the formation of interstellar silicates Tao Yang 1,2, Aaron M. Thomas1, Beni B. Dangi1,3, Ralf I. Kaiser 1, Alexander M. Mebel 4 & Tom J. Millar 5 1234567890():,; Interstellar silicates play a key role in star formation and in the origin of solar systems, but their synthetic routes have remained largely elusive so far. Here we demonstrate in a combined crossed molecular beam and computational study that silicon dioxide (SiO2) along with silicon monoxide (SiO) can be synthesized via the reaction of the silylidyne radical (SiH) with molecular oxygen (O2) under single collision conditions. This mechanism may provide a low-temperature path—in addition to high-temperature routes to silicon oxides in circum- stellar envelopes—possibly enabling the formation and growth of silicates in the interstellar medium necessary to offset the fast silicate destruction. 1 Department of Chemistry, University of Hawai’iatMānoa, Honolulu, HI 96822, USA. 2 State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200062, China. 3 Department of Chemistry, Florida Agricultural and Mechanical University, Tallahassee, FL 32307, USA. 4 Department of Chemistry and Biochemistry, Florida International University, Miami, FL 33199, USA. 5 Astrophysics Research Centre, School of Mathematics and Physics, Queen’s University Belfast, Belfast, BT7 1NN, UK. Correspondence and requests for materials should be addressed to R.I.K. (email: [email protected]) or to A.M.M. (email: mebela@fiu.edu) or to T.J.M. (email: [email protected]) NATURE COMMUNICATIONS | (2018) 9:774 | DOI: 10.1038/s41467-018-03172-5 | www.nature.com/naturecommunications 1 ARTICLE NATURE COMMUNICATIONS | DOI: 10.1038/s41467-018-03172-5 — 28 + 28 + he origin of interstellar silicate grains nanoparticles ( SiO2 ), and 44 ( SiO ). -
Periodic Trends Lab CHM120 1The Periodic Table Is One of the Useful
Periodic Trends Lab CHM120 1The Periodic Table is one of the useful tools in chemistry. The table was developed around 1869 by Dimitri Mendeleev in Russia and Lothar Meyer in Germany. Both used the chemical and physical properties of the elements and their tables were very similar. In vertical groups of elements known as families we find elements that have the same number of valence electrons such as the Alkali Metals, the Alkaline Earth Metals, the Noble Gases, and the Halogens. 2Metals conduct electricity extremely well. Many solids, however, conduct electricity somewhat, but nowhere near as well as metals, which is why such materials are called semiconductors. Two examples of semiconductors are silicon and germanium, which lie immediately below carbon in the periodic table. Like carbon, each of these elements has four valence electrons, just the right number to satisfy the octet rule by forming single covalent bonds with four neighbors. Hence, silicon and germanium, as well as the gray form of tin, crystallize with the same infinite network of covalent bonds as diamond. 3The band gap is an intrinsic property of all solids. The following image should serve as good springboard into the discussion of band gaps. This is an atomic view of the bonding inside a solid (in this image, a metal). As we can see, each of the atoms has its own given number of energy levels, or the rings around the nuclei of each of the atoms. These energy levels are positions that electrons can occupy in an atom. In any solid, there are a vast number of atoms, and hence, a vast number of energy levels. -
Properties of Silicon Hafensteiner
Baran Lab Properties of Silicon Hafensteiner Si vs. C Siliconium Ion - Si is less electronegative than C - Not believed to exist in any reaction in solution - More facile nucleophilic addition at Si center J. Y. Corey, J. Am. Chem. Soc. 1975, 97, 3237 - Pentacoordinate Si compounds have been observed Average BDE (kcal/mol) MeSiF4 NEt4 Ph3SiF2 NR4 C–C C–Si Si–Si C–F Si–F 83 76 53 116 135 - Lack of cation justified by high rate of bimolecular reactivity at Si C–O Si–O C–H Si–H Mechanism of TMS Deprotection 86 108 83 76 OTMS O Average Bond Lengths (Å) C–C C–Si C–O Si–O 1.54 1.87 1.43 1.66 Workup Si Si Silicon forms weak p-Bonds O O F F NBu4 p - C–C = 65 kcal/mol p - C–Si = 36 kcal/mol Pentavalent Silicon Baran Lab Properties of Silicon Hafensteiner Nucleophilic addition to Si b-Silicon effect and Solvolysis F RO–SiMe3 RO F–SiMe3 SiMe3 Me H H vs. Me3C H Me3C H OSiMe O Li 3 H OCOCF H OCOCF MeLi 3 3 A B Me-SiMe3 12 kA / kB = 2.4 x 10 Duhamel et al. J. Org. Chem. 1996, 61, 2232 H H SiMe Me b-Silicon Effect 3 vs. Me3C H Me3C H - Silicon stabalizes b-carbocations H OCOCF3 H OCOCF3 - Stabalization is a result of hyperconjugation 4 kA / kB = 4 x 10 SiR3 CR3 Evidence for Stepwise mechanism vs. Me3Si SiMe2Ph SiMe2Ph A B Me3Si SiMe2Ph *A is more stable than B by 38 kcal/mol * Me3Si SiMe2Ph Me3Si Jorgensen, JACS, 1986,107, 1496 Product ratios are equal from either starting material suggesting common intermediate cation Baran Lab Properties of Silicon Hafensteiner Evidence for Rapid Nucleophilic Attack Extraordinary Metallation Me SiMe3 SiMe3 Li Si t-BuLi Me SnCl4 Cl Me3Si Cl Me2Si Cl SiMe MeO OMe 3 OMe OMe Me2Si Cl vs.