Examples of Semiconductor Lasers
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Chapter 5 Semiconductor Laser
Chapter 5 Semiconductor Laser _____________________________________________ 5.0 Introduction Laser is an acronym for light amplification by stimulated emission of radiation. Albert Einstein in 1917 showed that the process of stimulated emission must exist but it was not until 1960 that TH Maiman first achieved laser at optical frequency in solid state ruby. Semiconductor laser is similar to the solid state laser like the ruby laser and helium-neon gas laser. The emitted radiation is highly monochromatic and produces a highly directional beam of light. However, the semiconductor laser differs from other lasers because it is small in 0.1mm long and easily modulated at high frequency simply by modulating the biasing current. Because of its uniqueness, semiconductor laser is one of the most important light sources for optical-fiber communication. It can be used in many other applications like scientific research, communication, holography, medicine, military, optical video recording, optical reading, high speed laser printing etc. The analysis of physics of laser is quite difficult and we summarize with the simplified version here. The application of laser although with a slow start in the 1960s but now very often new applications are found such as those mentioned earlier in the text. 5.1 Emission and Absorption of Radiation As mentioned in earlier Chapter, when an electron in an atom undergoes transition between two energy states or levels, it either absorbs or emits photon. When the electron transits from lower energy level to higher energy level, it absorbs photon. When an electron transits from higher energy level to lower energy level, it releases photon. -
Auger Recombination in Quantum Well Laser with Participation of Electrons in Waveguide Region
ARuegv.e Ar drev.c Momatbeinr.a Sticoi.n 5 in7 q(2u0a1n8tu) m19 w3-e1ll9 la8ser with participation of electrons in waveguide region 193 AUGER RECOMBINATION IN QUANTUM WELL LASER WITH PARTICIPATION OF ELECTRONS IN WAVEGUIDE REGION A.A. Karpova1,2, D.M. Samosvat2, A.G. Zegrya2, G.G. Zegrya1,2 and V.E. Bugrov1 1Saint Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverksky Pr. 49, St. Petersburg, 197101 Russia 2Ioffe Institute, Politekhnicheskaya 26, St. Petersburg, 194021 Russia Received: May 07, 2018 Abstract. A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum wells is suggested and discussed. For a studied Auger recombination process the energy of localized electron-hole pair is transferred to barrier carriers due to Coulomb interaction. The analysis of the rate and the coefficient of this process is carried out. It is shown, that there exists two processes of thresholdless and quasithreshold types, and thresholdless one is dominant. The coefficient of studied process is a non-monotonous function of quantum well width having maximum in region of narrow quantum wells. Comparison of this process with CHCC process shows that these two processes of nonradiative recombination are competing in narrow quantum wells, but prevail at different quantum well widths. 1. INTRODUCTION nonequilibrium carriers is still located in the waveguide region. Nowadays an actual research field of semiconduc- In present work a new loss channel in InGaAsP/ tor optoelectronics is InGaAsP/InP multiple quan- InP MQW lasers is under consideration. It affects tum well (MQW) lasers, because their lasing wave- significantly the threshold characteristics of laser length is 1.3 – 1.55 micrometers and coincides with and leads to generation failure at high excitation transparency windows of optical fiber [1-5]. -
Laser Threshold
Main Requirements of the Laser • Optical Resonator Cavity • Laser Gain Medium of 2, 3 or 4 level types in the Cavity • Sufficient means of Excitation (called pumping) eg. light, current, chemical reaction • Population Inversion in the Gain Medium due to pumping Laser Types • Two main types depending on time operation • Continuous Wave (CW) • Pulsed operation • Pulsed is easier, CW more useful Optical Resonator Cavity • In laser want to confine light: have it bounce back and forth • Then it will gain most energy from gain medium • Need several passes to obtain maximum energy from gain medium • Confine light between two mirrors (Resonator Cavity) Also called Fabry Perot Etalon • Have mirror (M1) at back end highly reflective • Front end (M2) not fully transparent • Place pumped medium between two mirrors: in a resonator • Needs very careful alignment of the mirrors (arc seconds) • Only small error and cavity will not resonate • Curved mirror will focus beam approximately at radius • However is the resonator stable? • Stability given by g parameters: g1 back mirror, g2 front mirror: L gi = 1 − ri • For two mirrors resonator stable if 0 < g1g2 < 1 • Unstable if g1g2 < 0 g1g2 > 1 • At the boundary (g1g2 = 0 or 1) marginally stable Stability of Different Resonators • If plot g1 vs g2 and 0 < g1g2 < 1 then get a stability plot • Now convert the g’s also into the mirror shapes Polarization of Light • Polarization is where the E and B fields aligned in one direction • All the light has E field in same direction • Black Body light is not polarized -
Electronic and Photonic Quantum Devices
Electronic and Photonic Quantum Devices Erik Forsberg Stockholm 2003 Doctoral Dissertation Royal Institute of Technology Department of Microelectronics and Information Technology Akademisk avhandling som med tillstºandav Kungl Tekniska HÄogskolan framlÄag- ges till offentlig granskning fÄoravlÄaggandeav teknisk doktorsexamen tisdagen den 4 mars 2003 kl 10.00 i sal C2, Electrum Kungl Tekniska HÄogskolan, IsafjordsvÄagen 22, Kista. ISBN 91-7283-446-3 TRITA-MVT Report 2003:1 ISSN 0348-4467 ISRN KTH/MVT/FR{03/1{SE °c Erik Forsberg, March 2003 Printed by Universitetsservice AB, Stockholm 2003 Abstract In this thesis various subjects at the crossroads of quantum mechanics and device physics are treated, spanning from a fundamental study on quantum measurements to fabrication techniques of controlling gates for nanoelectronic components. Electron waveguide components, i.e. electronic components with a size such that the wave nature of the electron dominates the device characteristics, are treated both experimentally and theoretically. On the experimental side, evidence of par- tial ballistic transport at room-temperature has been found and devices controlled by in-plane Pt/GaAs gates have been fabricated exhibiting an order of magnitude improved gate-e±ciency as compared to an earlier gate-technology. On the the- oretical side, a novel numerical method for self-consistent simulations of electron waveguide devices has been developed. The method is unique as it incorporates an energy resolved charge density calculation allowing for e.g. calculations of electron waveguide devices to which a ¯nite bias is applied. The method has then been used in discussions on the influence of space-charge on gate-control of electron waveguide Y-branch switches. -
An Introduction to Quantum Field Theory Free Download
AN INTRODUCTION TO QUANTUM FIELD THEORY FREE DOWNLOAD Michael E. Peskin,Daniel V. Schroeder | 864 pages | 01 Oct 1995 | The Perseus Books Group | 9780201503975 | English | Boulder, CO, United States An Introduction to Quantum Field Theory Totem Books. Perhaps they are produced by the excitation of a crystal that characteristically absorbs a photon of a certain frequency and emits two photons of half the original frequency. The other orbitals have more complicated shapes see atomic orbitaland are denoted by the letters dfgetc. In QED, its full description makes essential use of short lived virtual particles. Nobel Foundation. Problems 5. For a better shopping experience, please upgrade now. Planck's law explains why: increasing the temperature of a body allows it to emit more energy overall, An Introduction to Quantum Field Theory means that a larger proportion of the energy is towards the violet end of the spectrum. Main article: Double- slit experiment. We need to add that in the Lagrangian. This was one of the best courses I have ever taken: Professor Larsen did an excellent job both lecturing and coming up with interesting problems to work on. Something that is quantizedlike the energy of Planck's harmonic oscillators, can only take specific values. The quantum state of the An Introduction to Quantum Field Theory is described An Introduction to Quantum Field Theory its wave function. Quantum technology links Matrix isolation Phase qubit Quantum dot cellular automaton display laser single-photon source solar cell Quantum well laser. Conversely, an electron that absorbs a photon gains energy, hence it jumps to an orbit that is farther from the nucleus. -
From Quantum State Generation to Quantum Communications Claire Autebert
AlGaAs photonic devices: from quantum state generation to quantum communications Claire Autebert To cite this version: Claire Autebert. AlGaAs photonic devices: from quantum state generation to quantum communica- tions. Quantum Physics [quant-ph]. Université Paris 7 - Denis Diderot, 2016. English. tel-01676987 HAL Id: tel-01676987 https://tel.archives-ouvertes.fr/tel-01676987 Submitted on 7 Jan 2018 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Université Paris Diderot - Paris 7 Laboratoire Matériaux et Phénomènes Quantiques École Doctorale 564 : Physique en Île-de-France UFR de Physique THÈSE présentée par Claire AUTEBERT pour obtenir le grade de Docteur ès Sciences de l’Université Paris Diderot AlGaAs photonic devices: from quantum state generation to quantum communications Soutenue publiquement le 14 novembre 2016, devant la commission d’examen composée de : M. Philippe Adam, Invité M. Philippe Delaye, Rapporteur Mme Sara Ducci, Directrice de thèse M. Riad Haidar, Président M. Steve Kolthammer, Examinateur M. Aristide Lemaître, Invité M. Anthony Martin, Invité M. Fabio Sciarrino, Rapporteur M. Carlo Sirtori, Invité Acknowledgment En premier lieu, je tiens à remercier Sara Ducci qui a été pour moi une excellente directrice de thèse, tant du point de vue scientifique que du point de vue humain. -
Experimental Studies and Simulation of Laser Ablation of High-Density Polyethylene Films by Sandeep Ravi Kumar a Thesis Submitte
Experimental studies and simulation of laser ablation of high-density polyethylene films by Sandeep Ravi Kumar A thesis submitted to the graduate faculty in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE Major: Industrial Engineering Program of Study Committee: Hantang Qin, Major Professor Beiwen Li Matthew Frank The student author, whose presentation of the scholarship herein was approved by the program of study committee, is solely responsible for the content of this thesis. The Graduate College will ensure this thesis is globally accessible and will not permit alterations after a degree is conferred. Iowa State University Ames, Iowa 2020 Copyright © Sandeep Ravi Kumar, 2020. All rights reserved. ii DEDICATION I dedicate my thesis work to my family and many friends. A special feeling of gratitude to my loving parents Ravi Kumar and Vasanthi, whose words of encouragement have made me what I am today. iii TABLE OF CONTENTS Page LIST OF FIGURES .................................................................................................................... v LIST OF TABLES ....................................................................................................................vii NOMENCLATURE ................................................................................................................ viii ACKNOWLEDGMENTS .......................................................................................................... ix ABSTRACT .............................................................................................................................. -
Carrier Dynamics in Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence
Air Force Institute of Technology AFIT Scholar Theses and Dissertations Student Graduate Works 3-2002 Carrier Dynamics in Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence Steven M. Gorski Follow this and additional works at: https://scholar.afit.edu/etd Part of the Plasma and Beam Physics Commons Recommended Citation Gorski, Steven M., "Carrier Dynamics in Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence" (2002). Theses and Dissertations. 4387. https://scholar.afit.edu/etd/4387 This Thesis is brought to you for free and open access by the Student Graduate Works at AFIT Scholar. It has been accepted for inclusion in Theses and Dissertations by an authorized administrator of AFIT Scholar. For more information, please contact [email protected]. CARRIER DYNAMICS IN MID-INFRARED QUANTUM WELL LASERS USING TIME-RESOLVED PHOTOLUMINESCENCE THESIS Steven M Gorski, Capt, USAF AFIT/GAP/ENP/02M-01 DEPARTMENT OF THE AIR FORCE AIR UNIVERSITY AIR FORCE INSTITUTE OF TECHNOLOGY Wright-Patterson Air Force Base, Ohio APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED. Report Documentation Page Report Date Report Type Dates Covered (from... to) 4 Mar 02 Final - Title and Subtitle Contract Number Carrier Dynamics In Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence Grant Number Program Element Number Author(s) Project Number Capt Steven M. Gorski, USAF Task Number Work Unit Number Performing Organization Name(s) and Performing Organization Report Number Address(es) AFIT/GAP/ENP/02M-01 Air Force Institute of Technology Graduate School of Engineering (AFIT/EN) 2950 P Street, Bldg 640 WPAFB OH 45433-7765 Sponsoring/Monitoring Agency Name(s) and Sponsor/Monitor’s Acronym(s) Address(es) Air Force Reserach Laboratory Directored Enegy Directorate ATTN: Ms. -
Femtosecond Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics
Femtosecond Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics A thesis presented by Brian Robert Tull to The School of Engineering and Applied Sciences in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the subject of Applied Physics Harvard University Cambridge, Massachusetts June 2007 c 2007 by Brian Robert Tull All rights reserved. iii Femtosecond Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics Eric Mazur Brian R. Tull Abstract In this thesis, we investigate the irradiation of silicon, in a background gas of near atmospheric pressure, with intense femtosecond laser pulses at energy densities exceeding the threshold for ablation (the macroscopic removal of material). We study the resulting structure and properties of the material ejected in the ablation plume as well as the laser irradiated surface itself. The material collected from the ablation plume is a mixture of single crystal silicon nanoparticles and a highly porous network of amorphous silicon. The crystalline nanoparti- cles form by nucleation and growth; the amorphous material has smaller features and forms at a higher cooling rate than the crystalline particles. The size distribution of the crys- talline particles suggests that particle formation after ablation is fundamentally different in a background gas than in vacuum. We also observe interesting structures of coagulated particles such as straight lines and bridges. The laser irradiated surface exhibits enhanced visible and infrared absorption of light when laser ablation is performed in the presence of certain elements|either in the background gas or in a film on the silicon surface. To determine the origin of this enhanced absorption, we perform a comprehensive annealing study of silicon samples irradiated in the presence of three different elements (sulfur, selenium and tellurium). -
Infrared Laser Desorption/Ionization Mass Spectrometry
Louisiana State University LSU Digital Commons LSU Doctoral Dissertations Graduate School 2006 Infrared laser desorption/ionization mass spectrometry: fundamental and applications Mark Little Louisiana State University and Agricultural and Mechanical College, [email protected] Follow this and additional works at: https://digitalcommons.lsu.edu/gradschool_dissertations Part of the Chemistry Commons Recommended Citation Little, Mark, "Infrared laser desorption/ionization mass spectrometry: fundamental and applications" (2006). LSU Doctoral Dissertations. 2690. https://digitalcommons.lsu.edu/gradschool_dissertations/2690 This Dissertation is brought to you for free and open access by the Graduate School at LSU Digital Commons. It has been accepted for inclusion in LSU Doctoral Dissertations by an authorized graduate school editor of LSU Digital Commons. For more information, please [email protected]. INFRARED LASER DESORPTION/IONIZATION MASS SPECTROMETRY: FUNDAMENTALS AND APPLICATIONS A Dissertation Submitted to the Graduate Faculty of the Louisiana State University and Agricultural and Mechanical College in partial fulfillment of the requirements for the degree of Doctor of Philosophy in The Department of Chemistry by Mark Little B.S., Wake Forest University, 1998 December 2006 ACKNOWLEDGMENTS The popular quote, "L'enfer, c'est les autres" from an existential play by Jean-Paul Sartre is translated “Hell is other people”. I chose this quote because if it were not for all the “other people” in my life, I would be sitting on a beach right now sipping margaritas but I would not have my Ph.D. Therefore, I raise my salt covered glass to all my friends, family and colleagues for without their support this program of study would never been completed. -
Study of the Generation of Optical Pulses by Mode-Locking in Semiconductor Lasers for Applications in Lidar Systems
DOCTORAL THESIS Study of the Generation of Optical Pulses by Mode-Locking in Semiconductor Lasers for Applications in LiDAR Systems Daniel Chaparro Gonz´alez 2019 DOCTORAL THESIS Doctoral Programme in Physics Study of the Generation of Optical Pulses by Mode-Locking in Semiconductor Lasers for Applications in LiDAR Systems Daniel Chaparro Gonz´alez Doctor by the Universitat de les Illes Balears Advisor: Tutor: Prof. Dr. Salvador Balle Monjo Prof. Dr. Ra´ulToral Garc´es 2019 This thesis has been written by Mr. Daniel Chaparro Gonz´alezunder the supervision of Dr. Salvador Balle Monjo. Palma, 12 de septiembre de 2019 Advisor: PhD student: Dr. Salvador Balle Monjo Mr. Daniel Chaparro Gonz´alez The work presented in this thesis has been possible thanks to the funding provided by the Ministerio de Econom´ıay Competitividad by the call “Ayudas para contratos predoctorales para la formaci´onde doctores 2013” through the grant BES-2013-065230, linked to the project TEC2012-38864-C03-01, as well as the financial support provided by the “Plan Estatal de Investigaci´onCient´ıficay T´ecnica y de Innovaci´on”through Project TEC2015-65212-C3-3-P. List of publications derived from this thesis • D. Chaparro and Salvador Balle, “Optical Addressing of Pulses in a Semiconduc- tor-Based Figure-of-Eight Fiber Laser,” Physical Review Letters, vol. 120, iss. 6, pp. 064101-064105, Feb. 2018. DOI: 10.1103/PhysRevLett.120.064101 • D. Chaparro, L. Furfaro and S. Balle, “247 fs Time-localized structures from a passively mode-locked figure-of-eight semiconductor laser,” 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, 2017, pp. -
Summary Notes
Quantum Physics of Electron Statistics, Ballistic Transport, and Photonics in Semiconductor Nanostructures Debdeep Jena ([email protected]) Departments of ECE and MSE, Cornell University 1. Introduction This article discusses the quantum physics of electron and hole statistics in the bands of semiconductors, the quantum mechanical transport of the electron and hole states in the bands, and optical transitions between bands. The unique point of view presented here is a unified picture and single expressions for the carrier statistics, transport, and optical transitions for electrons and holes in nanostructures all dimensions - ranging from bulk 3d, to 2d quantum wells, to 1d quantum wires. The focus in the early parts is on nanostructures of dimensions d = 1, 2, 3 that allow transport, and the 0d quantum dot case is discussed for photonics. 2. Electron Energies in Semiconductors 2 2 Electrons in free space have continuous values of allowed energies E(k) = h¯ k , where h¯ = h/2p is the 2me h reduced Planck’s constant, me the rest mass of an electron, and k = 2p/l is the wavevector. hk¯ = l = p is the momentum of the free electron by the de Broglie relation of wave-particle duality. A periodic potential V(x + a) = V(x) in the real space of a crystal, when included in the Schrodinger equation, is found to 2 2 split the continuous energy spectrum electron energies E(k) = h¯ k into bands of energies E (k), separated 2me m th by energy gaps. The m allowed energy band is labeled Em(k). The states of definite energy Em(k) have ikx real-space wavefunctions yk(x) = e uk(x), where uk(x + a) = uk(k), called Bloch functions.