DOCSLIB.ORG

Auger Recombination in Quantum Well Laser with Participation of Electrons in Waveguide Region

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Auger Recombination in Quantum Well Laser with Participation of Electrons in Waveguide Region ARuegv.e Ar drev.c Momatbeinr.a Sticoi.n 5 in7 q(2u0a1n8tu) m19 w3-e1ll9 la8ser with participation of electrons in waveguide region 193 AUGER RECOMBINATION IN QUANTUM WELL LASER WITH PARTICIPATION OF ELECTRONS IN WAVEGUIDE REGION A.A. Karpova1,2, D.M. Samosvat2, A.G. Zegrya2, G.G. Zegrya1,2 and V.E. Bugrov1 1Saint Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverksky Pr. 49, St. Petersburg, 197101 Russia 2Ioffe Institute, Politekhnicheskaya 26, St. Petersburg, 194021 Russia Received: May 07, 2018 Abstract. A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum wells is suggested and discussed. For a studied Auger recombination process the energy of localized electron-hole pair is transferred to barrier carriers due to Coulomb interaction. The analysis of the rate and the coefficient of this process is carried out. It is shown, that there exists two processes of thresholdless and quasithreshold types, and thresholdless one is dominant. The coefficient of studied process is a non-monotonous function of quantum well width having maximum in region of narrow quantum wells. Comparison of this process with CHCC process shows that these two processes of nonradiative recombination are competing in narrow quantum wells, but prevail at different quantum well widths. 1. INTRODUCTION nonequilibrium carriers is still located in the waveguide region. Nowadays an actual research field of semiconduc- In present work a new loss channel in InGaAsP/ tor optoelectronics is InGaAsP/InP multiple quan- InP MQW lasers is under consideration. It affects tum well (MQW) lasers, because their lasing wave- significantly the threshold characteristics of laser length is 1.3 – 1.55 micrometers and coincides with and leads to generation failure at high excitation transparency windows of optical fiber [1-5]. It is levels and temperatures. For such Auger recombi- known [2], that lasers based on InGaAsP/InP have nation the recombination energy of localized elec- some shortcomings: the threshold current strongly tron-hole pair is transferred to barrier carriers due to depends on temperature above the temperature of Coulomb interaction (Fig. 1). active region T > 60 °C. Also at high pump levels It is known, that the lifetime of electron localized generation fails. It is assumed, that this effect is in QW depends on three processes such as caused by carrier and lattice heating [2]. radiative recombination, nonradiative Auger recom- For laser structure with InGaAsP/InP quantum bination of confined electrons and holes [7,8] and wells considered in this paper the depth of QWs for nonradiative recombination of confined carriers in- electrons and holes are 0.08 eV and 0.464 eV, re- teracting with electrons in the waveguide region. spectively. At high excitation levels and high tem- Thus, the last process should be considered as well peratures electrons are partly ejected from the QW if the threshold characteristics of lasers are into the waveguide region [1]. Also as shown in [6], analyzed. We will use four-band Kane’s model [9], that even for structures with deeper QWs part of Corresponding author: A.G. Zegrya, e-mail: [email protected] © 2018 Advanced Study Center Co. Ltd. 194 A.A. Karpova, D.M. Samosvat, A.G. Zegrya, G.G. Zegrya and V.E. Bugrov based on 8x8 Hamiltonian [10], which describes in the most accurate way the wave functions and en- ergy spectra of carriers in narrow-gap AIIIBV semi- conductors. The aim of the present work is to perform a de- tailed analysis of rate and coefficient for the studied process of Auger recombination, the dependence of its coefficient on QW width and a comparison of this process with CHCC for the model structure [2]. 2. BASIC EQUATIONS Because of a small effective mass electron are just partly localized in a narrow QW, while holes are almost completely localized therein. As a result a carrier redistribution, which is equal to charge re- distribution, takes place over the active region con- Fig. 1. Two schemes of electron transitions for sisting of QWs and waveguide region. To approxi- CHCC-process and the studied AR in QW mate the electron density in the barrier region a self- consistent Poisson’s equation is used. An additional n = n/T, = -e/T, is electron potential, n and p equation that relates the quasi-Fermi levels for elec- are the quasi-Fermi levels for electrons and holes, trons and holes is: n and p are quantized energy levels of an electron and a hole in the conduction and valence bands p 2D n 2D n 2D , (1) QW QW b respectively, T is the temperature of electron–hole 2D 2D 2D plasma in terms of energy. The quasi-Fermi levels where nQW , pQW , and nb are 2D carrier concentra- tions of electrons and holes in QW and barrier re- for electrons and holes are measured from the band gion. Final expressions for 2D carrier concentrations edges as well as quantized energy levels of local- [2] are: ized carriers. 1/ 4 4 T 2. WAVE FUNCTIONS AND CARRIER n 2D N2D (T ) b c 3 E STATES IN QW AND BARRIER B REGION 3/2 d Let us consider a single QW with its width a, lo- 1 exp( u ) 0 c n cated so that x-axis is its axis of symmetry (Fig. 2). (2) 1/ 2 3/2 To find the rate and the coefficient of studied Auger d , process the wave functions of carriers are needed. 1 exp( u ) III V 0 c 0 n For most A B semiconductors the wave functions of the conduction band are described 6 represen- tation, and the wave functions of the valence band 2D 2D n n n N ln exp 1 , QW c (3) are described by and representations. The T 7 8 equations for the corresponding wave functions can be written in differential form. The following repre- 2D mhh 2D p p sentation of the basis functions is chosen, which p N ln exp 1 , QW c (4) seems to be more suitable for the present work [7]: mc T where mc, mc, and mhh, are effective electron masses s , s , x , x , y , y , in barrier region and in QW and effective heavy hole (5) 2D z , z , mass in QW respectively, N = mT/ 2 and c c N 2D = m T/ 2 are two-dimensional effective den- c c where s , x , y , z are s- and p-type Bloch sity of states for conduction band in barrier region functions with angular momentum 0 and 1 respec- and in QW, E = me4/2 2 is the Bohr energy in B c s tively. The arrows denote spin directions. barrier region, uc =Ec /T, Ec is conduction band The carrier wave function has following repre- discontinuity and the barrier height for electrons, sentation: Auger recombination in quantum well laser with participation of electrons in waveguide region 195 3. AUGER RECOMBINATION RATE AND COEFFICIENT With the account of the antisymmetrized form of the wave functions, the matrix element of the Auger process is the following: Mfi MI MII , (8) e2 MI 3 (r1,1)4 (r2,2 ) 0 r1 r2 (9) 1(r1,1)2 (r2,2 ) , e2 Fig. 2. A schematic representation of a single QW MII 3 (r1,1)4 (r2,2 ) of InGaAsP/InP heterostructure. 0 r1 r2 (10) (r , ) (r , ) , s s Ψ p , (6) 1 2 2 2 1 1 where s and are spinors. Near the point the where r and r are the carrier coordinates, and equations for the envelope functions s and in 1 2 1 2 the spherical approximation have a form [7]: are spin variables, e is a charge of electron, 0 is the static dielectric constant of the QW semiconduc- (E E) i Ψ 0, tor. c s It could be easily shown that the matrix element (E E)Ψ i s of direct Coulomb interaction MI is much larger than 2 the matrix element of exchange interaction ( 4 )(Ψ) 1 2 M :M>>M . 2m (7) II I II To estimate the matrix element of investigated 2 Auger process for a transition of an excited particle ( 1 2 2 )[[Ψ]] i[σΨ] 0. 2m into continuous spectrum the following approxima- tion could be made: Ec, Ev<< Eg, what implies Here is the Kane matrix element, 1, 2 = 3 are k 2+q2>>k 2. It means that the total momentum of generalized Luttinger parameters, = /3, is the 4 1 so so an excited particle is much larger than that of a spin–orbit splitting constant of QW semiconductor, localized one. The matrix element could be calcu- E and E are the energies of the lower edge of the c v lated using the Fourier representation: conduction band and the upper edge of the valence band, m is a free electron mass, =( , , ) de- x y z 4e2 I (p)I (p) d p notes the Pauli matrices. M 23 14 , I 2 2 q1q 2q 3q 4 (11) For reasons of convenience, the energy of the 0 p q 2 upper edge of the valence band Ev is set equal to as it is shown in Fig. 2. * ipx I (p) (x) (x)e d x, (12) An explicit form of carrier wave functions and ij i j expressions determining their boundary conditions, energy spectra and dispersion equations could be 1, q 0, q (13) found in [7, 8]. The wave functions of electrons in 0, q 0. the barrier region have the same form with wave func- where q = |q - q | = |q - q | is the momentum tions of electrons localized in QWs.
Load more

Recommended publications
  • Chapter 5 Semiconductor Laser
    Chapter 5 Semiconductor Laser _____________________________________________ 5.0 Introduction Laser is an acronym for light amplification by stimulated emission of radiation. Albert Einstein in 1917 showed that the process of stimulated emission must exist but it was not until 1960 that TH Maiman first achieved laser at optical frequency in solid state ruby. Semiconductor laser is similar to the solid state laser like the ruby laser and helium-neon gas laser. The emitted radiation is highly monochromatic and produces a highly directional beam of light. However, the semiconductor laser differs from other lasers because it is small in 0.1mm long and easily modulated at high frequency simply by modulating the biasing current. Because of its uniqueness, semiconductor laser is one of the most important light sources for optical-fiber communication. It can be used in many other applications like scientific research, communication, holography, medicine, military, optical video recording, optical reading, high speed laser printing etc. The analysis of physics of laser is quite difficult and we summarize with the simplified version here. The application of laser although with a slow start in the 1960s but now very often new applications are found such as those mentioned earlier in the text. 5.1 Emission and Absorption of Radiation As mentioned in earlier Chapter, when an electron in an atom undergoes transition between two energy states or levels, it either absorbs or emits photon. When the electron transits from lower energy level to higher energy level, it absorbs photon. When an electron transits from higher energy level to lower energy level, it releases photon.
    [Show full text]
  • Electronic and Photonic Quantum Devices
    Electronic and Photonic Quantum Devices Erik Forsberg Stockholm 2003 Doctoral Dissertation Royal Institute of Technology Department of Microelectronics and Information Technology Akademisk avhandling som med tillstºandav Kungl Tekniska HÄogskolan framlÄag- ges till offentlig granskning fÄoravlÄaggandeav teknisk doktorsexamen tisdagen den 4 mars 2003 kl 10.00 i sal C2, Electrum Kungl Tekniska HÄogskolan, IsafjordsvÄagen 22, Kista. ISBN 91-7283-446-3 TRITA-MVT Report 2003:1 ISSN 0348-4467 ISRN KTH/MVT/FR{03/1{SE °c Erik Forsberg, March 2003 Printed by Universitetsservice AB, Stockholm 2003 Abstract In this thesis various subjects at the crossroads of quantum mechanics and device physics are treated, spanning from a fundamental study on quantum measurements to fabrication techniques of controlling gates for nanoelectronic components. Electron waveguide components, i.e. electronic components with a size such that the wave nature of the electron dominates the device characteristics, are treated both experimentally and theoretically. On the experimental side, evidence of par- tial ballistic transport at room-temperature has been found and devices controlled by in-plane Pt/GaAs gates have been fabricated exhibiting an order of magnitude improved gate-e±ciency as compared to an earlier gate-technology. On the the- oretical side, a novel numerical method for self-consistent simulations of electron waveguide devices has been developed. The method is unique as it incorporates an energy resolved charge density calculation allowing for e.g. calculations of electron waveguide devices to which a ¯nite bias is applied. The method has then been used in discussions on the influence of space-charge on gate-control of electron waveguide Y-branch switches.
    [Show full text]
  • An Introduction to Quantum Field Theory Free Download
    AN INTRODUCTION TO QUANTUM FIELD THEORY FREE DOWNLOAD Michael E. Peskin,Daniel V. Schroeder | 864 pages | 01 Oct 1995 | The Perseus Books Group | 9780201503975 | English | Boulder, CO, United States An Introduction to Quantum Field Theory Totem Books. Perhaps they are produced by the excitation of a crystal that characteristically absorbs a photon of a certain frequency and emits two photons of half the original frequency. The other orbitals have more complicated shapes see atomic orbitaland are denoted by the letters dfgetc. In QED, its full description makes essential use of short lived virtual particles. Nobel Foundation. Problems 5. For a better shopping experience, please upgrade now. Planck's law explains why: increasing the temperature of a body allows it to emit more energy overall, An Introduction to Quantum Field Theory means that a larger proportion of the energy is towards the violet end of the spectrum. Main article: Double- slit experiment. We need to add that in the Lagrangian. This was one of the best courses I have ever taken: Professor Larsen did an excellent job both lecturing and coming up with interesting problems to work on. Something that is quantizedlike the energy of Planck's harmonic oscillators, can only take specific values. The quantum state of the An Introduction to Quantum Field Theory is described An Introduction to Quantum Field Theory its wave function. Quantum technology links Matrix isolation Phase qubit Quantum dot cellular automaton display laser single-photon source solar cell Quantum well laser. Conversely, an electron that absorbs a photon gains energy, hence it jumps to an orbit that is farther from the nucleus.
    [Show full text]
  • From Quantum State Generation to Quantum Communications Claire Autebert
    AlGaAs photonic devices: from quantum state generation to quantum communications Claire Autebert To cite this version: Claire Autebert. AlGaAs photonic devices: from quantum state generation to quantum communica- tions. Quantum Physics [quant-ph]. Université Paris 7 - Denis Diderot, 2016. English. tel-01676987 HAL Id: tel-01676987 https://tel.archives-ouvertes.fr/tel-01676987 Submitted on 7 Jan 2018 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Université Paris Diderot - Paris 7 Laboratoire Matériaux et Phénomènes Quantiques École Doctorale 564 : Physique en Île-de-France UFR de Physique THÈSE présentée par Claire AUTEBERT pour obtenir le grade de Docteur ès Sciences de l’Université Paris Diderot AlGaAs photonic devices: from quantum state generation to quantum communications Soutenue publiquement le 14 novembre 2016, devant la commission d’examen composée de : M. Philippe Adam, Invité M. Philippe Delaye, Rapporteur Mme Sara Ducci, Directrice de thèse M. Riad Haidar, Président M. Steve Kolthammer, Examinateur M. Aristide Lemaître, Invité M. Anthony Martin, Invité M. Fabio Sciarrino, Rapporteur M. Carlo Sirtori, Invité Acknowledgment En premier lieu, je tiens à remercier Sara Ducci qui a été pour moi une excellente directrice de thèse, tant du point de vue scientifique que du point de vue humain.
    [Show full text]
  • Carrier Dynamics in Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence
    Air Force Institute of Technology AFIT Scholar Theses and Dissertations Student Graduate Works 3-2002 Carrier Dynamics in Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence Steven M. Gorski Follow this and additional works at: https://scholar.afit.edu/etd Part of the Plasma and Beam Physics Commons Recommended Citation Gorski, Steven M., "Carrier Dynamics in Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence" (2002). Theses and Dissertations. 4387. https://scholar.afit.edu/etd/4387 This Thesis is brought to you for free and open access by the Student Graduate Works at AFIT Scholar. It has been accepted for inclusion in Theses and Dissertations by an authorized administrator of AFIT Scholar. For more information, please contact [email protected]. CARRIER DYNAMICS IN MID-INFRARED QUANTUM WELL LASERS USING TIME-RESOLVED PHOTOLUMINESCENCE THESIS Steven M Gorski, Capt, USAF AFIT/GAP/ENP/02M-01 DEPARTMENT OF THE AIR FORCE AIR UNIVERSITY AIR FORCE INSTITUTE OF TECHNOLOGY Wright-Patterson Air Force Base, Ohio APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED. Report Documentation Page Report Date Report Type Dates Covered (from... to) 4 Mar 02 Final - Title and Subtitle Contract Number Carrier Dynamics In Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence Grant Number Program Element Number Author(s) Project Number Capt Steven M. Gorski, USAF Task Number Work Unit Number Performing Organization Name(s) and Performing Organization Report Number Address(es) AFIT/GAP/ENP/02M-01 Air Force Institute of Technology Graduate School of Engineering (AFIT/EN) 2950 P Street, Bldg 640 WPAFB OH 45433-7765 Sponsoring/Monitoring Agency Name(s) and Sponsor/Monitor’s Acronym(s) Address(es) Air Force Reserach Laboratory Directored Enegy Directorate ATTN: Ms.
    [Show full text]
  • Study of the Generation of Optical Pulses by Mode-Locking in Semiconductor Lasers for Applications in Lidar Systems
    DOCTORAL THESIS Study of the Generation of Optical Pulses by Mode-Locking in Semiconductor Lasers for Applications in LiDAR Systems Daniel Chaparro Gonz´alez 2019 DOCTORAL THESIS Doctoral Programme in Physics Study of the Generation of Optical Pulses by Mode-Locking in Semiconductor Lasers for Applications in LiDAR Systems Daniel Chaparro Gonz´alez Doctor by the Universitat de les Illes Balears Advisor: Tutor: Prof. Dr. Salvador Balle Monjo Prof. Dr. Ra´ulToral Garc´es 2019 This thesis has been written by Mr. Daniel Chaparro Gonz´alezunder the supervision of Dr. Salvador Balle Monjo. Palma, 12 de septiembre de 2019 Advisor: PhD student: Dr. Salvador Balle Monjo Mr. Daniel Chaparro Gonz´alez The work presented in this thesis has been possible thanks to the funding provided by the Ministerio de Econom´ıay Competitividad by the call “Ayudas para contratos predoctorales para la formaci´onde doctores 2013” through the grant BES-2013-065230, linked to the project TEC2012-38864-C03-01, as well as the financial support provided by the “Plan Estatal de Investigaci´onCient´ıficay T´ecnica y de Innovaci´on”through Project TEC2015-65212-C3-3-P. List of publications derived from this thesis • D. Chaparro and Salvador Balle, “Optical Addressing of Pulses in a Semiconduc- tor-Based Figure-of-Eight Fiber Laser,” Physical Review Letters, vol. 120, iss. 6, pp. 064101-064105, Feb. 2018. DOI: 10.1103/PhysRevLett.120.064101 • D. Chaparro, L. Furfaro and S. Balle, “247 fs Time-localized structures from a passively mode-locked figure-of-eight semiconductor laser,” 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, 2017, pp.
    [Show full text]
  • Summary Notes
    Quantum Physics of Electron Statistics, Ballistic Transport, and Photonics in Semiconductor Nanostructures Debdeep Jena ([email protected]) Departments of ECE and MSE, Cornell University 1. Introduction This article discusses the quantum physics of electron and hole statistics in the bands of semiconductors, the quantum mechanical transport of the electron and hole states in the bands, and optical transitions between bands. The unique point of view presented here is a unified picture and single expressions for the carrier statistics, transport, and optical transitions for electrons and holes in nanostructures all dimensions - ranging from bulk 3d, to 2d quantum wells, to 1d quantum wires. The focus in the early parts is on nanostructures of dimensions d = 1, 2, 3 that allow transport, and the 0d quantum dot case is discussed for photonics. 2. Electron Energies in Semiconductors 2 2 Electrons in free space have continuous values of allowed energies E(k) = h¯ k , where h¯ = h/2p is the 2me h reduced Planck’s constant, me the rest mass of an electron, and k = 2p/l is the wavevector. hk¯ = l = p is the momentum of the free electron by the de Broglie relation of wave-particle duality. A periodic potential V(x + a) = V(x) in the real space of a crystal, when included in the Schrodinger equation, is found to 2 2 split the continuous energy spectrum electron energies E(k) = h¯ k into bands of energies E (k), separated 2me m th by energy gaps. The m allowed energy band is labeled Em(k). The states of definite energy Em(k) have ikx real-space wavefunctions yk(x) = e uk(x), where uk(x + a) = uk(k), called Bloch functions.
    [Show full text]
  • Development of Semiconductor Laser for Optical Communication
    SPECIAL Development of Semiconductor Laser for Optical Communication Tsukuru KATSUYAMA The performance of the semiconductor laser has been dramatically improved by applying quantum well structure including strained layer superlattice and innovation of crystal growth techniques such as organometallic vapor phase epitaxy. The semiconductor laser used for optical communication came to be indispensable for our life as an optical component con - necting not only long-distance large-capacity trunk networks but also access networks. This paper describes the develop - ment of the semiconductor laser for optical communication focusing mainly on Sumitomo Electric’s R&D activities. With the progress of optical transmission technology, various kinds of semiconductor lasers have been developed for the application to wavelength division multiplexing, high speed, low power consumption, and photonic integration. Keywords: semiconductor laser, optical communication, quantum well 1. Introduction 2. Development of high performance FP laser The performance, functionality and productivity of 2-1 Materials and crystal growth techniques the semiconductor laser have been dramatically improved Wavelengths used for optical communication are since its invention in 1962. Today it came to be indispen - mainly 1.55 µm for long-distance transmission and 1.3 µm sable for our life as optical components connecting home for short- and mid distance transmission due to the min - and the Internet as well as long-distance large-capacity imum loss and minimum dispersion in optical fiber, re - trunk networks. spectively as shown in Fig. 1 . However, recently over 400 It may be said that the information revolution pulled nm band ranging from 1260 nm to 1675 nm came to be by the explosive spread of the Internet is originated from used by the introduction of the WDM technology men - three innovations from 1969 to 1970, the room tempera - tioned later.
    [Show full text]
  • Arxiv:1701.01403V3 [Quant-Ph] 14 Sep 2017 Cetssadpioohr Trigfo Niut.Ptaoa B Understan Pythagoras Its Antiquity
    1 Nonlinear interactions and non-classical light Dmitry V. Strekalov and Gerd Leuchs Max Planck Institute for the Science of Light, Staudstraße 2, 90158 Erlangen, Germany [email protected] Abstract. Non-classical concerns light whose properties cannot be explained by classical electrodynamics and which requires invoking quantum principles to be un- derstood. Its existence is a direct consequence of field quantization; its study is a source of our understanding of many quantum phenomena. Non-classical light also has properties that may be of technological significance. We start this chapter by discussing the definition of non-classical light and basic examples. Then some of the most prominent applications of non-classical light are reviewed. After that, as the principal part of our discourse, we review the most common sources of non-classical light. We will find them surprisingly diverse, including physical systems of various sizes and complexity, ranging from single atoms to optical crystals and to semicon- ductor lasers. Putting all these dissimilar optical devices in the common perspective we attempt to establish a trend in the field and to foresee the new cross-disciplinary approaches and techniques of generating non-classical light. 1.1 Introduction 1.1.1 Classical and non-classical light In historical perspective, light doubtlessly is among the most classical phe- nomena of physics. The oldest known treatise on this subject, “Optics” by Euclid, dates back to approximately 300 B.C. Yet in contemporary physics, light is one of the strongest manifestations of quantum. Electromagnetic field arXiv:1701.01403v3 [quant-ph] 14 Sep 2017 quanta, the photons, are certainly real: they can be emitted and detected one by one, delivering discrete portions of energy and momentum, and in this sense may be viewed as particles of light.
    [Show full text]
  • 2009 Conference on Lasers & Electro-Optics
    2009 Conference on Lasers & Electro-Optics Europe & 11th European Quantum Electronics Conference (CLEO EUROPE/EQEC 2009) Munich, Germany 14 – 19 June 2009 Pages 1-652 IEEE Catalog Number: CFP09ECL-PRT ISBN: 978-1-4244-4079-5 Copyright © 2009 by the Institute of Electrical and Electronic Engineers, Inc All Rights Reserved Copyright and Reprint Permissions: Abstracting is permitted with credit to the source. Libraries are permitted to photocopy beyond the limit of U.S. copyright law for private use of patrons those articles in this volume that carry a code at the bottom of the first page, provided the per-copy fee indicated in the code is paid through Copyright Clearance Center, 222 Rosewood Drive, Danvers, MA 01923. For other copying, reprint or republication permission, write to IEEE Copyrights Manager, IEEE Service Center, 445 Hoes Lane, Piscataway, NJ 08854. All rights reserved. ***This publication is a representation of what appears in the IEEE Digital Libraries. Some format issues inherent in the e-media version may also appear in this print version. IEEE Catalog Number: CFP09ECL-PRT ISBN 13: 978-1-4244-4079-5 Library of Congress No.: 2009901334 Additional Copies of This Publication Are Available From: Curran Associates, Inc 57 Morehouse Lane Red Hook, NY 12571 USA Phone: (845) 758-0400 Fax: (845) 758-2633 E-mail: [email protected] TABLE OF CONTENTS PLENARY TALKS Femtosecond Optics: More Than Just Really Fast(Plenary).........................................................................................................................1
    [Show full text]
  • Basic Nanostructures for Quantum Dot Cellular Automata Application
    doi:10.4186/ej.2010.14.4.41 QUADRA-QUANTUM DOTS AND RELATED ATTERNS OF QUANTUM OT OLECULES: P D M BASIC NANOSTRUCTURES FOR QUANTUM DOT CELLULAR AUTOMATA APPLICATION Somsak Panyakeow Semiconductor Device Research Laboratory (SDRL), CoE Nanotechnology Center of Thailand, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand E-mail: [email protected] ABSTRACT Laterally close-packed quantum dots (QDs) called quantum dot molecules (QDMs) are grown using a modified molecular beam epitaxy (MBE) method. Quantum dots may be aligned and cross hatched. Quantum rings (QRs) created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi- QDMs) and quantum dot rings (QDRs). The preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA) is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra- quantum dots (QQDs). Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission using the Coulomb repulsion force, which is fast and consumes little power. A combination of quadra-quantum dots in line and cross-over works as logic gates and memory bits. A molecular Beam Epitaxial growth technique called „„Droplet Epitaxy” has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85) droplets deposited on a GaAs substrate at 390°C with a droplet growth rate of 1ML/s.
    [Show full text]
  • Next Generation Photon Sources for Grand Challenges in Science And
    On the Cover: Laser pulses can be shaped or tailored in order to control the pathway of a photochemical reaction. For example, different dissociation products can be produced from a given molecule, depending on the temporal and spectral shape of the laser pulse. Fourth generation X-ray light sources can reveal the structure and electronic energies of the intermediate and final states during the course of the photochemical reaction by interrogation with an X-ray pulse, correlated in time with the laser pulse driving the reaction. Next-Generation Photon Sources for Grand Challenges in Science and Energy Report of the Workshop on Solving Science and Energy Grand Challenges with Next-Generation Photon Sources October 27-28, 2008 Rockville, Maryland Co-Chairs Wolfgang Eberhardt Helmholtz Center, Berlin and Franz Himpsel University of Wisconsin - Madison Discussion Leaders Scientific Editors Nora Berrah (Western Michigan) Simon Bare (UOP LLC) Gordon Brown (Stanford) Michelle Buchanan (Oak Ridge) Hermann Dürr (Berlin) George Crabtree (Argonne) Russell Hemley (Carnegie Institution, D.C.) Wolfgang Eberhardt (Berlin) John C. Hemminger (Irvine) Franz Himpsel (Wisconsin) Janos Kirz (Berkeley) Marc Kastner (MIT) Rick Osgood (Columbia) Michael Norman (Argonne) Julia Phillips (Sandia) John Sarrao (Los Alamos) Robert Schlögl (Berlin) Z.X. Shen (Stanford) A Report of the Basic Energy Sciences Advisory Committee Chair: John C. Hemminger University of California - Irvine Prepared by the BESAC Subcommittee on Facing Our Energy Challenges in a New Era of Science Co-chairs: George Crabtree Argonne National Laboratory and Marc Kastner Massachusetts Institute of Technology U.S. Department of Energy May 2009 Basic Energy Sciences Advisory Committee Chair: John C.
    [Show full text]