Optical Cavity and Laser Modes Conditions Which Determine the Radiation Modes Created in Common Lasers
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Laser Linewidth, Frequency Noise and Measurement
Laser Linewidth, Frequency Noise and Measurement WHITEPAPER | MARCH 2021 OPTICAL SENSING Yihong Chen, Hank Blauvelt EMCORE Corporation, Alhambra, CA, USA LASER LINEWIDTH AND FREQUENCY NOISE Frequency Noise Power Spectrum Density SPECTRUM DENSITY Frequency noise power spectrum density reveals detailed information about phase noise of a laser, which is the root Single Frequency Laser and Frequency (phase) cause of laser spectral broadening. In principle, laser line Noise shape can be constructed from frequency noise power Ideally, a single frequency laser operates at single spectrum density although in most cases it can only be frequency with zero linewidth. In a real world, however, a done numerically. Laser linewidth can be extracted. laser has a finite linewidth because of phase fluctuation, Correlation between laser line shape and which causes instantaneous frequency shifted away from frequency noise power spectrum density (ref the central frequency: δν(t) = (1/2π) dφ/dt. [1]) Linewidth Laser linewidth is an important parameter for characterizing the purity of wavelength (frequency) and coherence of a Graphic (Heading 4-Subhead Black) light source. Typically, laser linewidth is defined as Full Width at Half-Maximum (FWHM), or 3 dB bandwidth (SEE FIGURE 1) Direct optical spectrum measurements using a grating Equation (1) is difficult to calculate, but a based optical spectrum analyzer can only measure the simpler expression gives a good approximation laser line shape with resolution down to ~pm range, which (ref [2]) corresponds to GHz level. Indirect linewidth measurement An effective integrated linewidth ∆_ can be found by can be done through self-heterodyne/homodyne technique solving the equation: or measuring frequency noise using frequency discriminator. -
High-Power Solid-State Lasers from a Laser Glass Perspective
LLNL-JRNL-464385 High-Power Solid-State Lasers from a Laser Glass Perspective J. H. Campbell, J. S. Hayden, A. J. Marker December 22, 2010 Internationakl Journal of Applied Glass Science Disclaimer This document was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor Lawrence Livermore National Security, LLC, nor any of their employees makes any warranty, expressed or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States government or Lawrence Livermore National Security, LLC. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States government or Lawrence Livermore National Security, LLC, and shall not be used for advertising or product endorsement purposes. High-Power Solid-State Lasers from a Laser Glass Perspective John H. Campbell, Lawrence Livermore National Laboratory, Livermore, CA Joseph S. Hayden and Alex Marker, Schott North America, Inc., Duryea, PA Abstract Advances in laser glass compositions and manufacturing have enabled a new class of high-energy/high- power (HEHP), petawatt (PW) and high-average-power (HAP) laser systems that are being used for fusion energy ignition demonstration, fundamental physics research and materials processing, respectively. The requirements for these three laser systems are different necessitating different glasses or groups of glasses. -
Self Amplified Lock of a Ultra-Narrow Linewidth Optical Cavity
Self Amplified Lock of a Ultra-narrow Linewidth Optical Cavity Kiwamu Izumi,1, ∗ Daniel Sigg,1 and Lisa Barsotti2 1LIGO Hanford Observatory, PO Box 159 Richland, Washington 99354, USA 2LIGO laboratory, Massachusetts Institute of Technology, Cambridge, Massachussetts 02139, USA compiled: January 8, 2016 High finesse optical cavities are an essential tool in modern precision laser interferometry. The incident laser field is often controlled and stabilized with an active feedback system such that the field resonates in the cavity. The Pound-Drever-Hall reflection locking technique is a convenient way to derive a suitable error signal. However, it only gives a strong signal within the cavity linewidth. This poses a problem for locking a ultra-narrow linewidth cavity. We present a novel technique for acquiring lock by utilizing an additional weak control signal, but with a much larger capture range. We numerically show that this technique can be applied to the laser frequency stabilization system used in the Laser Interferometric Gravitational-wave Observatory (LIGO) which has a linewidth of 0.8 Hz. This new technique will allow us to robustly and repeatedly lock the LIGO laser frequency to the common mode of the interferometer. OCIS codes: (140.3425), (140.3410) http://dx.doi.org/10.1364/XX.99.099999 High finesse optical cavities have been an indispens- nonlinear response [8, 9] dominant and thus hinder the able tool for precision interferometry to conduct rela- linear controller. tivistic experiments such as gravitational wave detection Gravitational wave observatories deploy kilometer [1{3] and optical clocks [4]. The use of a high finesse cav- scale interferometers with extremely narrow linewidth. -
New Waveguide-Type HOM Damper for the ALS Storage Ring RF Cavities
Proceedings of EPAC 2004, Lucerne, Switzerland NEW WAVEGUIDE-TYPE HOM DAMPER FOR ALS STORAGE RING CAVITIES*. S.Kwiatkowski, K. Baptiste, J. Julian LBL, Berkeley, CA, 94720, USA Abstract The ALS storage ring 500 MHz RF system uses two re-entrant accelerating cavities powered by a single This effect could be compensated by adding a second 320kW PHILLIPS YK1305 klystron. During several vacuum pump if necessary (which would pump the cavity years of initial operation, the RF cavities were not via the power coupler port). The cut-off frequency for the equipped with effective passive HOM damper systems, lowest TE mode (TE11 mode) of the single ridge circular however, longitudinal beam stability was achieved with waveguide, used in our damper, is 890MHz and the total careful cavity temperature control and by implementing length is 600mm. The single ridge geometry of the an active longitudinal feedback system (LFB), which was waveguide was chosen as it allows to dump both often operating at the edge of its capabilities. As a result, symmetrical and nonsymmetrical HOM’s. longitudinal beam stability was a significant operations issue at the ALS. During three consecutive shutdown DESIGN PROCESS periods (April2002, 2003 and 2004) we installed E-type The design process of the new ALS damper took HOM dampers on the main and third harmonic cavities. several steps. First with the help of 2-D SUPERLANS These devices dramatically decreased the Q-values of the code, the main parameters of the longitudinal HOM longitudinal anti-symmetric HOM modes. The next step spectrum have been determined. Then the cross-section of is to damp the remaining longitudinal HOM modes in the the HOM damper waveguide was optimized with the help fundamental RF cavities below the synchrotron radiation of HFSS S11 processor. -
Transverse-Mode Coupling Effects in Scanning Cavity Microscopy
PAPER • OPEN ACCESS Transverse-mode coupling effects in scanning cavity microscopy To cite this article: Julia Benedikter et al 2019 New J. Phys. 21 103029 View the article online for updates and enhancements. This content was downloaded from IP address 130.183.90.175 on 07/01/2020 at 15:23 New J. Phys. 21 (2019) 103029 https://doi.org/10.1088/1367-2630/ab49b4 PAPER Transverse-mode coupling effects in scanning cavity microscopy OPEN ACCESS Julia Benedikter1,2, Thea Moosmayer2, Matthias Mader1,3, Thomas Hümmer1,3 and David Hunger2 RECEIVED 1 Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstraße4, D-80799München, Germany 5 August 2019 2 Karlsruher Institut für Technologie, Physikalisches Institut, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, Germany REVISED 3 Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Str.1, D-85748Garching, Germany 11 September 2019 ACCEPTED FOR PUBLICATION E-mail: [email protected] 1 October 2019 Keywords: optical microcavities, Fabry–Perot resonators, mode mixing, fiber cavity PUBLISHED 15 October 2019 Supplementary material for this article is available online Original content from this work may be used under Abstract the terms of the Creative Commons Attribution 3.0 Tunable open-access Fabry–Pérot microcavities enable the combination of cavity enhancement with licence. high resolution imaging. To assess the limits of this technique originating from background variations, Any further distribution of this work must maintain we perform high-finesse scanning cavity microscopy of pristine planar mirrors. We observe spatially attribution to the author(s) and the title of localized features of strong cavity transmission reduction for certain cavity mode orders, and periodic the work, journal citation background patterns with high spatial frequency. -
Power Build-Up Cavity Coupled to a Laser Diode
I POWER BUILD-UP CAVITY COUPLED I TO A LASER DIODE Daniel J. Evans I Center of Excellence for Raman Technology University of Utah I Abstract combination of these elements will emit photons at different frequencies. The ends of these semiconductor In many Raman applications there is a need to devices are cleaved to form mirrors that bounce the I detect gases in the low ppb range. The desired photons back and forth within the cavity. The photons sensitivity can be achieved by using a high power laser excite more electrons, which form more photons source in the range of tens of watts. A system (referred to as optical pumping). 2 A certain portion of I combining a build-up cavity to enhance the power and the photons emit through the front and back cleaved an external cavity laser diode setup to narrow the surfaces of the laser diode. The amount of photons that bandwidth can give the needed power to the Raman get through the cleaved surfaces can be adjusted by I spectroscopy system. coating the surface or installing other mirrors. Introduction to Laser Diodes The planar cleaved surfaces of the laser diode form a Fabry-Perot cavity with set resonance frequencies I An important characteristic of all lasers is the (vp).3 The typical laser diode has a spacing of 150 f.1I11 mode structure. The mode structure refers to both the with an index of refraction of 3.5, yielding a resonance lasing frequency and the spatial characteristics of the frequency of 285 GHz. The wavelength spacing (~A.) I laser. -
Polarization (Waves)
Polarization (waves) Polarization (also polarisation) is a property applying to transverse waves that specifies the geometrical orientation of the oscillations.[1][2][3][4][5] In a transverse wave, the direction of the oscillation is perpendicular to the direction of motion of the wave.[4] A simple example of a polarized transverse wave is vibrations traveling along a taut string (see image); for example, in a musical instrument like a guitar string. Depending on how the string is plucked, the vibrations can be in a vertical direction, horizontal direction, or at any angle perpendicular to the string. In contrast, in longitudinal waves, such as sound waves in a liquid or gas, the displacement of the particles in the oscillation is always in the direction of propagation, so these waves do not exhibit polarization. Transverse waves that exhibit polarization include electromagnetic [6] waves such as light and radio waves, gravitational waves, and transverse Circular polarization on rubber sound waves (shear waves) in solids. thread, converted to linear polarization An electromagnetic wave such as light consists of a coupled oscillating electric field and magnetic field which are always perpendicular; by convention, the "polarization" of electromagnetic waves refers to the direction of the electric field. In linear polarization, the fields oscillate in a single direction. In circular or elliptical polarization, the fields rotate at a constant rate in a plane as the wave travels. The rotation can have two possible directions; if the fields rotate in a right hand sense with respect to the direction of wave travel, it is called right circular polarization, while if the fields rotate in a left hand sense, it is called left circular polarization. -
Saturable Absorber Mirrors for Passive Mode-Locking
Saturable Absorber Mirrors For Passive Mode-locking R. Hohmuth1 3, G. Paunescu2, J. Hein2, C. H. Lange3, W. Richter1 3, 1 Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena, Germany, tel: +493641947444, fax: +493641947442, [email protected] 2 Institut fuer Optik und Quantenelektronik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena, Germany 3 BATOP GmbH, Th.-Koerner-Str. 4, 99425 Weimar, Germany Introduction Saturable Absorber Mirror (SAM) Saturable absorber mirrors (SAMs) are inexpensive and schematic laser set-up compact devices for passive mode-locking of diode pumped solid state lasers. Such laser systems can provide ultrashort cavity, length L -cavity with gain medium pulse trains with high repetition rates. Typical values for pulse pulse -high reflective mirror and TRT=2L/c ) t output mirror with partially ( duration ranging from 100 fs up to 10 ps. For instance a I y t transmission i s Nd:YAG laser can be mode-locked with pulse duration of 8 ps n e -saturable absorber as t n and mean output power of 6 W. I modulator On this poster we present results for a Yb: KYW laser passive =>pulse trains spaced by mode-locked by SAMs with three different modulation depths round-trip time TRT=2L/c time t between 0.6% and 2.0%. SAMs were prepared by solid- gain medium high reflective mirror (pumped e.g. output mirror source molecular beam epitaxy with a low-temperature (LT) with saturable absorber by laser diode) (SAM) grown InGaAs absorbing quantum well. LT InGaAs quantum well SAM design SAM reflection spectrum Ta O or SiO / dielectric cover Requirements for passive mode- 25 2 conduction 71.2 nm GaAs / barrier E 7 nm c1 71.2 nm GaAs / barrier locking band Ec LT InGaAs 74.7 nm GaAs The mode-locking regime is stable agaist the onset of quantum well InGaAs 88.4 nm AlAs multiple pulsing as long as the pulse duration is smaller energy : 25x Bragg mirror than t . -
Quantum Illumination at the Microwave Wavelengths
Quantum Illumination at the Microwave Wavelengths 1 2 3 4 5 6, Shabir Barzanjeh, Saikat Guha, Christian Weedbrook, David Vitali, Jeffrey H. Shapiro, and Stefano Pirandola ∗ 1Institute for Quantum Information, RWTH Aachen University, 52056 Aachen, Germany 2Quantum Information Processing Group, Raytheon BBN Technologies, Cambridge, Massachusetts 02138, USA 3QKD Corp., 60 St. George St., Toronto, M5S 3G4, Canada 4School of Science and Technology, University of Camerino, Camerino, Macerata 62032, Italy 5Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 6Department of Computer Science & York Centre for Quantum Technologies, University of York, York YO10 5GH, United Kingdom Quantum illumination is a quantum-optical sensing technique in which an entangled source is exploited to improve the detection of a low-reflectivity object that is immersed in a bright thermal background. Here we describe and analyze a system for applying this technique at microwave frequencies, a more appropriate spectral region for target detection than the optical, due to the naturally-occurring bright thermal background in the microwave regime. We use an electro-opto- mechanical converter to entangle microwave signal and optical idler fields, with the former being sent to probe the target region and the latter being retained at the source. The microwave radiation collected from the target region is then phase conjugated and upconverted into an optical field that is combined with the retained idler in a joint-detection -
Narrow Line Width Frequency Comb Source Based on an Injection-Locked III-V-On-Silicon Mode-Locked Laser
Narrow line width frequency comb source based on an injection-locked III-V-on-silicon mode-locked laser Sarah Uvin,1;2;∗ Shahram Keyvaninia,3 Francois Lelarge,4 Guang-Hua Duan,4 Bart Kuyken1;2 and Gunther Roelkens1;2 1Photonics Research Group, Department of Information Technology, Ghent University - imec, Sint-Pietersnieuwstraat 41, 9000 Ghent, Belgium 2Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Ghent, Belgium 3Fraunhofer Heinrich-Hertz-Institut Einsteinufer 37 10587, Berlin, Germany 4III-V lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and Technology and CEA Leti, France ∗[email protected] Abstract: In this paper, we report the optical injection locking of an L-band (∼1580 nm) 4.7 GHz III-V-on-silicon mode-locked laser with a narrow line width continuous wave (CW) source. This technique allows us to reduce the MHz optical line width of the mode-locked laser longitudinal modes down to the line width of the source used for injection locking, 50 kHz. We show that more than 50 laser lines generated by the mode-locked laser are coherent with the narrow line width CW source. Two locking techniques are explored. In a first approach a hybrid mode-locked laser is injection-locked with a CW source. In a second approach, light from a modulated CW source is injected in a passively mode-locked laser cavity. The realization of such a frequency comb on a chip enables transceivers for high spectral efficiency optical communication. © 2016 Optical Society of America OCIS codes: (250.5300) Photonic integrated circuits; (140.4050) Mode-locked lasers. -
Construction of a Flashlamp-Pumped Dye Laser and an Acousto-Optic
; UNITED STATES APARTMENT OF COMMERCE oUBLICATION NBS TECHNICAL NOTE 603 / v \ f ''ttis oi Construction of a Flashlamp-Pumped Dye Laser U.S. EPARTMENT OF COMMERCE and an Acousto-Optic Modulator National Bureau of for Mode-Locking Iandards — NATIONAL BUREAU OF STANDARDS 1 The National Bureau of Standards was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (1) a basis for the Nation's physical measure- ment system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology, the Center for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation's scien- tific community, industry, and commerce. The Institute consists of a Center for Radia- tion Research, an Office of Measurement Services and the following divisions: Applied Mathematics—Electricity—Heat—Mechanics—Optical Physics—Linac Radiation 2—Nuclear Radiation 2—Applied Radiation 2—Quantum Electronics 3— Electromagnetics 3—Time and Frequency 3 —Laboratory Astrophysics3—Cryo- 3 genics . -
Arxiv:2106.00060V1 [Physics.Optics] 31 May 2021
Self-injection locking of the gain-switched laser diode Artem E. Shitikov1,∗ Valery E. Lobanov1, Nikita M. Kondratiev1, Andrey S. Voloshin2, Evgeny A. Lonshakov1, and Igor A. Bilenko1,3 1Russian Quantum Center, 143026 Skolkovo, Russia 2Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland and 3Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia (Dated: April 2021) We experimentally observed self-injection locking regime of the gain-switched laser to high-Q optical microresonator. We revealed that comb generated by the gain-switched laser experiences a dramatic reduce of comb teeth linewidths in this regime. We demonstrated the Lorentzian linewidth of the comb teeth of sub-kHz scale as narrow as for non-switched self-injection locked laser. Such setup allows generation of high-contrast electrically-tunable optical frequency combs with tunable comb line spacing in a wide range from 10 kHz up to 10 GHz. The characteristics of the generated combs were studied for various modulation parameters - modulation frequency and amplitude, and for parameters, defining the efficiency of the self-injection locking - locking phase, coupling efficiency, pump frequency detuning. I. INTRODUCTION In this work, we developed the first microresonator stabilized gain-switched laser operating in the SIL Narrow-linewidth lasers are in increasing demand in regime. We demonstrated experimentally high-contrast science and bleeding edge technologies as they give a electrically tuned optical frequency combs with line competitive advantage in such areas as coherent com- spacing from 10 kHz to 10 GHz. It was revealed that munications [1], high-precision spectroscopy [2, 3], op- SIL leads to a frequency distillation of each comb teeth tical clocks [4, 5], ultrafast optical ranging [6–8] and and consequently increase the comb contrast.