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A Practical Implementation of Memristor Emulator Circuit Based on Operational Transconductance Amplifiers

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A Practical Implementation of Memristor Emulator Circuit Based on Operational Transconductance Amplifiers Received: July 2, 2019 37 A Practical Implementation of Memristor Emulator Circuit Based on Operational Transconductance Amplifiers Apichata Thongrak1* Suchada Sitjongsataporn2 Sanya Khunkhao3 Phichet Moungnoul1 1 Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang 1 Chalongkrung Rd., Ladkrabang, Bangkok 10520 Thailand 2Department of Electronic Engineering, Faculty of Engineering, Mahanakorn University of Technology 140 Cheumsamphan Rd., Nongchok, Bangkok 10530 Thailand 3Faculty of Engineering, Rajamangala University of Technology Phra Nakhon 1381 Pracharat 1 Road, Wongsawang Subdistrict, Bang Sue District, Bangkok 10800 * Corresponding author’s Email: [email protected] Abstract: As described of electrical circuit have been considering that there are three fundamental passive two- terminal circuit elements; resistor, capacitor, and inductor respectively. In 1971, Prof. L. Chua proposed and described memristor which defines the relationship between magnetic flux and charge. This paper are purposed a memristor emulator circuit based on operational transconductance amplifiers (OTAs). The proposed circuits can be realized using commercially integrated circuits OTA, op amp as AD844, TL084, inductor, capacitor and resistors. The characteristic of memristor emulators can be examined in a practical experiment with the active and passive components. As described, the results could be demonstrated with the memristor circuit application. Furthermore, OTA is used to realize electronically tunable current conveyors emulator circuit. As a result of simulation, the decremental and incremental memristor emulator circuit is suitable for connecting in a series circuit. It was found that the frequency-dependent pinched hysteresis loop of proposed memristor emulator circuits can be updated by changing the value of capacitance and resistance, besides it increases the current gain of current conveyor. In addition to the expected results of memristor (RM), Memcapacitor (CM) and meminductor (LM) are proposed to determine in time-domain characteristics of R-L-C mode circuits. The results of experimental are discussed of phenomena studies by the memory characteristics. Keywords: Memristor, Emulator circuit, Operational transconductance amplifier (OTA). (DDCCs) have been proposed in [7] using 1. Introduction memristor emulator circuit using two CFOAs, one OTA, three resistors and two capacitors. A multiple- Recently, the memristors are purposed in form of memory-resistor and memristive devices that were output OTA (MO-OTA) has been used to realize presumed to exist when the link was made to voltage- either decremental or incremental memristor polarity-dependent. The formulation of a memristor was emulator circuits in [8]. first devised in 1971 by Chua [1] as a fourth circuit on Memristors offer a nonvolatile memory storage passive elements such as R, L and C respectively. A with simple device structure as detailed in [9, 10] number of memristor applications has been rapidly including the artificial neural networks as synaptic reported for digital logic circuits in [2-4] and neural weights with a pulse based memristor circuit [2], networks in [5, 6]. memristor XOR gate for resistive multiplier [3] and The memristor emulator circuits based on phase shift keying modulators based memristor [4]. CMOS differential difference current conveyors International Journal of Intelligent Engineering and Systems, Vol.12, No.6, 2019 DOI: 10.22266/ijies2019.1231.04 Received: July 2, 2019 38 Table 1. Comparison of the proposed circuit with those of some previous works Circuits No. of active components No. of passive components Decremental/Incremental 1-EDDCC Proposed circuit (3-LM13600), 2-R, 1-C Decremental Fig. 5 1-AD633 1-EDDCC Fig. 6 (3-LM13600), 2-R, 1-C Incremental 1-AD633 Ref. [16] (2017) 1-CCTA 3-R, 1-C, 1-SW Both Ref. [17] (2017) 1-DVCCTA 3-R, 1-C, 1-SW Both Ref. [18] (2018) 7-MOS 1-C Decremental 3-ECCII (6-LM13600), Ref. [19] (2015) 1-R, 1-C Decremental 1-AD633 Many types of mixed-mode circuits have V been studied such as differential voltage current Resistor Capacitor conveyors (DVCCs), second-generation current = dv= Rdi dq= Cdv d vdt conveyors (CCIIs), current controlled current i dq= idt q conveyors (CCCIIs), DDCCs and OTAs [11]. Based on the light-dependent resistor (LDR), a Inductor Memristor memcapacitor emulator has been presented d = Ldi d = Mdq using RM-CM converter and a method is used to Memristor systems satisfy a LDR memristor-based meminductor- Figure.1 Four fundamental two-terminal circuit elements: equivalent circuit detailed in [12]. resistor, capacitor, inductor and memristor [22] The modern active devices have been used to realize memristor emulator circuits such as current This paper is organized as follows. The conveyor transconductance amplifier (CCTA) in definitions and concept of memristor model is [16], differential voltage current conveyor introduced in Section 2 and Section 3 is described transconductance amplifier (DVCCTA) in [17]. The about OTA-based ECCII. We present an OTA-based circuits in [17] provide decremental and incremental EDDCC memristor emulator that is similar to that of memristor emulators into one circuit by selecting the a memristor shown in Section 4. Experimental switch. The circuit in [16] is simulated using CMOS results and conclusion are given in Section 5 and 6, implementation of CCTA while the circuit in [17] is respectively. simulated using CMOS implementation of DVCCTA whereas experiment tests, these circuits 2. Memristor model have been built using commercially available ICs AD844 and CA3080. The circuit in [18] realizes Following [13], there are four fundamental memristor emulator circuit based on MOSFET-C. circuit variables: electric current i, voltage v, charge The comparison of proposed circuits with those q and magnetic flux described in Fig.1. The previous works are summarized in Table 1. memristor, with memristance M-provides a Compared with [16-18], the proposed circuits can be functional relation between charge and flux, pushed the operating of high frequency by d=Mdq. Basic mathematical definition of a capacitance, resistance and current gain of current current-controlled memristor for circuit analysis is 푑푤 conveyor, compared with [16, 18, 19], the proposed given by 푣 = 푅(푤)푖 and (i), where w is the state circuits in Figs. 5 and 6 provide decremental and 푑푡 variable and R is a generalized resistance. incremental memristor emulators into single circuit The concept of memristive systems is described and compared with [16, 17], the proposed circuits 푑푤 as 푣 = 푅(푤, 푖) and (푖) where 푓 is function of can be tested both simulation and experiment with 푑푡 the same active and passive components. time. In this paper, we introduce a compact circuit A thin semiconductor film of thickness D model and physical hardware emulation for sandwiched between two metal contacts is memristor using the electronically tunable considered in Fig. 2. The total resistance is assigned differential different current conveyor (EDDCC). with 2-variable resistors connected in series, where The hardware emulator will demonstrate the resistances are given for the full length D of the experimentally memristor dynamics. International Journal of Intelligent Engineering and Systems, Vol.12, No.6, 2019 DOI: 10.22266/ijies2019.1231.04 Received: July 2, 2019 39 I V1 o A g V W m Doped Undoped V 2 D Figure. 3 Circuit symbol of OTA (a) Undoped : ECCII Iy Iz1 Roff Doped : Vy y z1 Vz1 W W Ron R off R D on D (b) Vx x z2 Vz2 Figure.2 Coupled variable-resistor model for a memristor: Ix Iz2 (a) structure and symbol of the memristor and (b) Figure.4 Symbol of ECCII diagram with a simplified equivalent circuit ECCII device. However, the semiconductor film has a Iy y OTA3 region with a high concentration of dopants having I Vy gm1 z1 low resistance Ron. The remainder closes to gm3 z1 essentially zero dopant concentration with higher OTA1 I resistance Roff. An external bias v(t) across the z2 g g device will move the boundary between the two m2 Vs m4 z2 regions causing the charged dopants to drift, we get OTA 2 OTA4 푤(푖) 푤(푖) x Vx 푣(푡) = {푅표푛 + 푅표푓푓 (1 − )} 푖(푡) (1) 퐷 퐷 Ix R 푑푤(푡) 푅 Figure. 5 OTA implementation for ECCII = 휇 표푛 푖(푡) (2) 푑푡 퐷 The symbol of the ECCII is shown in Fig. 4 and w(t) is given as and its ideal characteristics can be described by 푅 푤(푡) = 휇 표푛 푞(푡) (3) 퐼푦 0 0 0 퐼푦 푣 퐷 [푉푥] = [1 0 0] [푉푥] (5) 퐼푧 0 ∓푘 0 퐼푧 By substituting Eq. (3) into Eq. (1), the memristance for RON = ROFF can be expressed as ECCII has a unity voltage gain between 휇푣푅표푛 terminals y and x and has current gain k between 푀(푔) = 푅 (1 − ) 푞(푡) (4) 표푓푓 퐷2 terminals z and z. OTA implementation for ECCII can be shown in Fig. 5. Using nodal analysis, the where the term of q-dependent is the crucial support relation between Vx and Vy can be expressed as to the memristance. It becomes larger with higher dopant mobilities µV and smaller semiconductor 푔푚1푔푚2훾푖푛푅 푉푥 = 푉푦 (6) film thicknesses D, respectively. 1+푔푚1푔푚2훾푖푛푅 3. OTA-based electronically tunable second- where gm1 and gm2 are respectively the generation current conveyor (ECCII) transconductance gains of OTA1 and OTA2, R is the given resistor and rin is the small-signal input OTA is important active device that has been resistance of OTA2. used to realize both voltage- and current-mode analog circuits. OTA-based circuits can be tested 4. OTA-based electronically tunable both simulation and breadboard experiment. Symbol differential different current conveyor of OTA is shown in Fig.3. The ideal OTA is (EDDCC) described by 퐼0 = 푔푚(푉1 − 푉2) , where is the output The part relationship of EDDCC is shown in Fig. current, gm is the transconductance gain, V1 and V2 6 which is given as denote respectively the non-inverting and inverting input voltages.
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