Innovation Infosheet High Density 3D Stacked RRAM Cache Designs

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Innovation Infosheet High Density 3D Stacked RRAM Cache Designs

Innovation Infosheet Downloaded September 23, 2021 High Density 3D Stacked RRAM Cache Designs Track Code: 2014-VADI-66681 Categories: - Computer Technology - Electrical Engineering Keywords: - Big Data - Circuits - Computer Hardware - Computer Technology - Digital Storage - Electrical Engineering A memistor, or memory resistor, is one of the basic elements of electronic circuits because it can't be replaced by either a resistor, capacitor, or inductor. In 3D memory integration of memristors, layers of crossbars are stacked upon one another on a substrate with each layer separated by a layer of insulator. Each crossbar layer has row and column bars with memristor layers in-between. Inefficiencies exist in footprint and storage capacity as a result of this design. Purdue University researchers have designed a memristor that stacks more crossbars for the same amount of space, allowing its density to be nearly doubled. This design sets the next generation in energy density and proves itself as an interesting design alternative because of its higher energy density and the dynamic insulator's thickness equivalent to three memristor layers. Since the number of crossbars is fewer for the new, extrapolated design, the power dissipation on the crossbars is expected to be reduced compared to conventional design. Field- programmable gate arrays (FPGAs) would greatly benefit from this design due to their need for large amounts of programmed data. Advantages: -Reduced footprint and increased storage capacity Potential Applications: -Computers -Electric Circuits -High computer memory density -Implantable devices -Field-programmable gate arrays (FPGAs) Downloaded September 23, 2021 Page 1 / 2 People: - Vadivel Murugan, Selva Kumaran (Project leader) Intellectual Property: Application Date: September 25, 2017 Type: CON-Patent Country of Filing: United States Patent Number: 10,497,750 Issue Date: December 3, 2019 Application Date: May 22, 2015 Type: Utility Patent Country of Filing: United States Patent Number: 9,773,843 Issue Date: September 26, 2017 Application Date: May 22, 2014 Type: Provisional-Patent Country of Filing: United States Patent Number: (None) Issue Date: (None) Contact OTC: Purdue Office of Technology Commercialization The Convergence Center 101 Foundry Drive, Suite 2500 West Lafayette, IN 47906 Phone: (765) 588-3475 Fax: (765) 463-3486 Email: [email protected] Downloaded September 23, 2021 Page 2 / 2.

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Memristive Devices for Computing J
REVIEW ARTICLE PUBLISHED ONLINE: 27 DECEMBER 2012 | DOI: 10.1038/NNANO.2012.240 Memristive devices for computing J. Joshua Yang1, Dmitri B. Strukov2 and Duncan R. Stewart3 Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met. he search for new computing technologies is driven by the con- excellent review articles8–19. Here, we focus on the chemical and phys- tinuing demand for improved computing performance, but ical mechanisms of memristive devices, and try to identify the key Tto be of use a new technology must be scalable and capable. issues that impede the commercialization of memristors as computer Memristor or memristive nanodevices seem to fulfil these require- memory and logic. ments — they can be scaled down to less than 10 nm and offer fast, non-volatile, low-energy electrical switching.
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Navaraj, William Ringal Taube (2019) Inorganic Micro/Nanostructures- Based High-Performance Flexible Electronics for Electronic Skin Application
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Ultra Low Power Robust 12T Sram Architecture Based on Parallel Cross- Coupling Feedback
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A Non-Destructive Crossbar Architecture of Multi-Level Memory-Based Resistor" (2015)
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