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A Handbook on ELECTRONICS 1

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A Handbook on ELECTRONICS 1 [For Railway & Other Engineering (Diploma) Competitive Examinations] By Prof. Tejpal Suman Upkar Prakashan, Agra-2 © Publishers Publishers (An ISO 9001 : 2000 Company) UPKAR PRAKASHAN 2/11A, Swadeshi Bima Nagar, AGRA–282 002 Phone : 4053333, 2530966, 2531101 Fax : (0562) 4053330, 4031570 E-mail : [email protected], Website : www.upkar.in Branch Offices 4845, Ansari Road, Daryaganj, 1-8-1/B, R.R. Complex (Near Sundaraiah Park, Pirmohani Chowk, New Delhi–110 002 Adjacent to Manasa Enclave Gate), Kadamkuan, Phone : 011–23251844/66 Bagh Lingampally, Hyderabad–500 044 (A.P.) Patna–800 003 Phone : 040–66753330 Phone. : 0612–2673340 28, Chowdhury Lane, Shyam B-33, Blunt Square, Bazar, Near Metro Station, Kanpur Taxi Stand Lane, Mawaiya, Gate No. 4 Lucknow–226 004 (U.P.) Kolkata–700004 (W.B.) Phone : 0522–4109080 Phone : 033–25551510 The publishers have taken all possible precautions in publishing this book, yet if any mistake has crept in, the publishers shall not be responsible for the same. This book or any part thereof may not be reproduced in any form by Photographic, Mechanical, or any other method, for any use, without written permission from the Publishers. Only the courts at Agra shall have the jurisdiction for any legal dispute. ISBN : 978-93-5013-582-2 Price : ` 165.00 (Rs. One Hundred Sixty Five Only) Code No. 1864 Printed at : UPKAR PRAKASHAN (Printing Unit) Bye-pass, AGRA Contents 1. Electronic Equipments .................................................................................................. 3–18 2. D.C. Generators ........................................................................................................... 19–31 3. D.C. Motors ................................................................................................................ 32–44 4. Bipolar Junction Transistor (BJTs) ................................................................................. 45–53 5. Rectifier ........................................................................................................................ 54–63 6. Field-Effect Transistor ................................................................................................... 64–74 7. Number Systems and Codes ........................................................................................ 75–82 8. Electronic Analog as well as Digital ............................................................................... 83–91 9. Optoelectronic Devices ................................................................................................. 92–100 10. Transducers ................................................................................................................. 101–109 11. Cathode Ray Oscilloscope ........................................................................................... 110–119 12. A.C. Three Phase Motors ............................................................................................ 120–131 13. Single Phase Motors .................................................................................................... 132–147 14. Meters .........................................................................................................................148–159 15. Alternators ...................................................................................................................160–169 16. Transformers ................................................................................................................170–178 17. Polyphase .................................................................................................................... 179–188 18. Fundamentals of Electricity ........................................................................................... 189–200 A Handbook on ELECTRONICS 1. Electronic Equipments U In pro-electron code system for semiconductor U Diodes are called bipolar devices because conduction components, for the component BY127 ‘B’ and ‘Y’ is due to both hole and electron currents. respectively stand for silicon and rectifier diode. U The maximum reverse voltage that a diode can U The cut-in (threshold or keen) voltage of By1127 withstand, is referred to as peak-inverse-voltage. rectifier diode is 0.7 V. U A forward biased diode starts conducting when the U The PIV rating of IN4007 rectifier diode is 1000 V. applied voltage reaches certain voltage known as U The two most important electrical specification for a barrier voltage. rectifier (power) diode are PIV and IF. U In JEDEC system of coding semiconductor com- U The cathode lead of OA79 diode is identified by a ponents 1 N represents on PN-junction. coloured dot at one end. U The JEDEC equivalent for BY 127 diode is IN4007. U Each letter in the semi-conductor coding gives U The maximum voltage (peak to peak) that can be specific information. In the transistor AC 128 letter generated by a function generator is 20 V. Germanium. U The function selector is used to select the desired wave U In the BZ 148 semiconductor device, the second letter form. Z-indicates the device is a zenerdiode U The selected wave form in a function generator is U The second letter ‘F’ in transistor condification indicates available at output jack. H.F. transistor. U The effect of amplitude control on TTL output is U The diagram useful to identify the leads of transistors the amplitude remains constant. and other semiconductor devices in known as base U The main difference between function generator and diagram. the AF generator is that the function generator produces U Which element is used as a semiconductor sine wave, square wave, triangular wave but AF material? (Silicon) generator produces triangular wave. U Valence electrons are those which occupy the outermost U AF generator has a frequency range upto 100 kHz. shell. U The maximum signal amplitude output from a AF U The number of valence electrons of the element silicon generator will be 20 V. (whose atomic number is 14) is 4. U In AF generator the lowest frequency starts from 20 U The number of valence electrons of a semiconductor Hz. element is four. U The function of a zener diode is to maintain a constant U The temperature coefficient of resistance of a output voltage. semiconductor is negative. U The connection of a zener diode in a circuit is U Silicon is used as a semiconductor material. always reverse biased. U The temperature coefficient of resistance of a U At the breakdown region of a reverse bias, the semiconductor is Negative. zener diode current begins to increase rapidly. U The main characteristic of any diode is that it lets current U Once the zener diode enters into the breakdown region flow in only one direction. the factor that does not change much is the voltage. U The width of the depletion region of a junction is U In a zener voltage regulator circuit the resistance is to reduced under forward bias because the majority be connected in series, with the supply when the load careers on both sides of the junction are driven is connected across the zener diode. towards it. U The value of current in a zener diode is limited by the U The width of the depletion layer of a junction is external circuit resistance. increased under reverse bias. U How the cathode of a zener diode is represented in its U When forward bias is applied in a junction diode, it symbol? decreases the potential barrier. U How the cathode of a zener diode is represented in its U The silicon junction diode starts to conduct when symbol? (The letter ‘Z’) the voltage across the junction reaches is 0.7 V. U The output voltage of a zener diode regulated power U The voltage across the depletion layer for a germanium supply remians practically constant because of the diode is 0.3 V. voltage drop in series resistance changes with change U The barrier voltage across a PN-junction of a silicon in load current. diode at 25°C is 0.7 V. U The unregulated input voltage is different from the 4 A Handbook on Electronics output voltage of P regulator circuit in the sense it is U In the case of LED a typical forward current ranges higher. from 1 mA to more than 50 mA. U Which is the element added to intrinsic semiconductor U The special type of LEDs which can emit more than material as impurity to produce P-type semiconductor? two colours are mounted 3 pin common cathode (Indium) package. U The intrinsic semiconductor at room temperature U A photo diode can turn its current ON and OFF in inducts leakage current like in insulators. nanoseconds. U The width of the depletion layer of a junction is U The maximum reverse voltage that can be applied for increased under reverse bias. the chosen LED in 8.0 volts. U Antimony elements used as impurity to produce N-type U Carbon tetra chloride is not used for etching. semiconductor. U The typical ratio of ferric chloride and water for making U Defecting plate in a CRT is used to control the path of etching solution is 1 : 10. electrons. U The time taken for etching PCBs is in the range of 5 to U The emission of electrons in CRT is due to indirect 10 minutes. heating of cathode. U The PCB side on which components are mounted U Control grid controls the number of electrons. is referred to as component side. U Deflection plates in a CRT deflects electron beam U Horizontal mounting of the component on PCB, is vertically and horizontally. preferred in specific cases where it takes more space U A CRT screen is coated with phosphor. but more stable. U Sychronisation of time base signal and input signal is U Correct way of soldering is heating the joint
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