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Application Note AN233 Revision: Rev BGA735N16 BGA735N16 for 3G/HSPA/LTE Applications Supporting Bands 3, 7 and 20 with Reference Resistor Rref= 27 kΩ Application Note AN233 Revision: Rev. 1.0 2010-08-24 RF and Protection Devices Edition 2010-08-24 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA735N16 BGA735N16 for 3G/HSPA/LTE Applications Supporting Bands 3, 7 and 20 Application Note AN233 Revision History: 2010-08-24 Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG A-GOLD™, BlueMoon™, COMNEON™, CONVERGATE™, COSIC™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™, DAVE™, DUALFALC™, DUSLIC™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, E-GOLD™, EiceDRIVER™, EUPEC™, ELIC™, EPIC™, FALC™, FCOS™, FLEXISLIC™, GEMINAX™, GOLDMOS™, HITFET™, HybridPACK™, INCA™, ISAC™, ISOFACE™, IsoPACK™, IWORX™, M-GOLD™, MIPAQ™, ModSTACK™, MUSLIC™, my-d™, NovalithIC™, OCTALFALC™, OCTAT™, OmniTune™, OmniVia™, OptiMOS™, OPTIVERSE™, ORIGA™, PROFET™, PRO-SIL™, PrimePACK™, QUADFALC™, RASIC™, ReverSave™, SatRIC™, SCEPTRE™, SCOUT™, S-GOLD™, SensoNor™, SEROCCO™, SICOFI™, SIEGET™, SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCRATES™, TEMPFET™, thinQ!™, TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VINETIC™, VIONTIC™, WildPass™, X-GOLD™, XMM™, X-PMU™, XPOSYS™, XWAY™. Other Trademarks AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2009-10-19 Application Note AN233, Rev. 1.0 3 / 34 2010-08-24 BGA735N16 BGA735N16 for 3G/HSPA/LTE Applications Supporting Bands 3, 7 and 20 List of Content, Figures and Tables Table of Content 1 Introduction ........................................................................................................................................ 6 2 Infineon LNA BGA735N16 for 3G and 4G Applications................................................................ 11 3 Description ........................................................................................................................................ 12 4 Application Information ................................................................................................................... 14 5 Typical Measurement Results ......................................................................................................... 16 6 Measured Graphs ............................................................................................................................. 19 7 Evaluation Board and Layout Information .................................................................................... 31 Authors .............................................................................................................................................. 33 List of Figures Figure 1 Application Diagram of a 3-band RF front-end for 3G and 4G systems. ............................................. 8 Figure 2 BGA735N16 in TSNP-16 Package .................................................................................................... 11 Figure 3 Block diagram and pin assignment of BGA735N16 (topview) ........................................................... 12 Figure 4 Schematics of the application circuit of BGA735N16 for bands 3, 7 and 20 ..................................... 14 Figure 5 Measured Power Gain of BGA735N16 in Band 3 with Rref= 27 kΩ .................................................. 19 Figure 6 Measured Noise Figure of BGA735N16 in Band 3 with Rref= 27 kΩ ................................................ 19 Figure 7 Measured input insertion loss of BGA735N16 in Band 3 with Rref= 27 kΩ ....................................... 20 Figure 8 Measured output insertion loss of BGA735N16 in Band 3 with Rref= 27 kΩ .................................... 20 Figure 9 Measured reverse isolation of BGA735N16 in Band 3 with Rref= 27 kΩ .......................................... 21 Figure 10 Measured stability factor of BGA735N16 in Band 3 with Rref= 27 kΩ .............................................. 21 Figure 11 Measured input IP3 of BGA735N16 in middle of Band 3 with Rref= 27 kΩ (High Gain Mode) ......... 22 Figure 12 Measured Power Gain of BGA735N16 in Band 7 with Rref= 27 kΩ .................................................. 23 Figure 13 Measured Noise Figure of BGA735N16 in Band 7 with Rref= 27 kΩ ................................................ 23 Figure 14 Measured input insertion loss of BGA735N16 in Band 7 with Rref= 27 kΩ ....................................... 24 Figure 15 Measured output insertion loss of BGA735N16 in Band 7 with Rref= 27 kΩ .................................... 24 Figure 16 Measured reverse isolation of BGA735N16 in Band 7 with Rref= 27 kΩ .......................................... 25 Figure 17 Measured stability factor of BGA735N16 in Band 7 with Rref= 27 kΩ .............................................. 25 Figure 18 Measured input IP3 of BGA735N16 in middle of Band 7 with Rref= 27 kΩ (High Gain Mode) ......... 26 Figure 19 Measured Power Gain of BGA735N16 in Band 20 with Rref= 27 kΩ ................................................ 27 Figure 20 Measured Noise Figure of BGA735N16 in Band 20 with Rref= 27 kΩ .............................................. 27 Figure 21 Measured input insertion loss of BGA735N16 in Band 20 with Rref= 27 kΩ ..................................... 28 Figure 22 Measured output insertion loss of BGA735N16 in Band 20 with Rref= 27 kΩ .................................. 28 Figure 23 Measured reverse isolation of BGA735N16 in Band 20 with Rref= 27 kΩ ........................................ 29 Figure 24 Measured stability factor of BGA735N16 in Band 20 with Rref= 27 kΩ ............................................ 29 Figure 25 Measured input IP3 of BGA735N16 in middle of Band 20 with Rref= 27 kΩ (High Gain Mode) ....... 30 Figure 26 Photo Picture of Evaluation Board of BGA735N16 ............................................................................ 31 Figure 27 PCB Layer Information of BGA735N16.............................................................................................. 31 Application Note AN233, Rev. 1.0 4 / 34 2010-08-24 BGA735N16 BGA735N16 for 3G/HSPA/LTE Applications Supporting Bands 3, 7 and 20 List of Content, Figures and Tables List of Tables Table 1 UMTS/WCDMA Band Assignment ....................................................................................................... 6 Table 2 LTE Band Assignment ......................................................................................................................... 7 Table 3 Infineon Product Portfolio of LNAs for 3G and 4G Applications (Stand July 2010) ........................... 10 Table 4 Pin Assignment of BGA735N16 ........................................................................................................
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