1. Introduction & Theory

Total Page:16

File Type:pdf, Size:1020Kb

1. Introduction & Theory 1. Introduction & Theory Neha Singh October 2010 Course Overview Day 1: Day 2: Introduction and Theory Genosc Layer Transparent Films Absorbing Films Microstructure – EMA If time permits: – Surface roughness Non-idealities – Grading (Simple and Ultra thin films function-based ITO) Uniqueness test – Thickness non-uniformity UV Absorption Review – Point-by-point fit Actual Samples © 2010, All Rights Reserved 2 Introduction & Theory Light Materials (optical constants) Interaction between light and materials Ellipsometry Measurements Data Analysis © 2010, All Rights Reserved 3 Light Electromagnetic Plane Wave From Maxwell’s equations we can describe a plane wave ⎛ 2π ⎞ E(z,t) = E0 sin⎜ − (z − vt) + ξ ⎟ ⎝ λ ⎠ Amplitude Amplitude arbitraryarbitrary phase phase X Wavelength Wavelength VelocityVelocity λ Electric field E(z,t) Y Z Direction Magnetic field, B(z,t) of propagation © 2010, All Rights Reserved 4 Intensity and Polarization Intensity = “Size” of Electric field. I ∝ E 2 Polarization = “Shape” of Electric field travel. Different Size Y •Y E More Intense Less (Intensity) Intense E Same Shape! X (Polarization) •X © 2010, All Rights Reserved 5 What is Polarization? Describes how Electric Field travels through space and time. X wave1 Y E wave2 Z © 2010, All Rights Reserved 6 Describing Polarized Light Jones Vector Stokes Vector Describe polarized light Describe any light beam with amplitude & phase. as vector of intensity ⎡S ⎤ ⎡ E2 + E2 ⎤ iϕx 0 x0 y0 ⎡Ex ⎤ ⎡E0xe ⎤ ⎢ ⎥ ⎢ 2 2 ⎥ = S1 ⎢ Ex0 −Ey0 ⎥ ⎢ ⎥ ⎢ iϕy ⎥ ⎢ ⎥ = E E e ⎢ ⎥ ⎢ ⎥ ⎣ y ⎦ ⎣⎢ 0y ⎦⎥ S2 2Ex0Ey0 cosΔ ⎢ ⎥ ⎢ ⎥ ⎣S3 ⎦ ⎣⎢2Ex0Ey0 sinΔ⎦⎥ © 2010, All Rights Reserved 7 Light-Material Interaction velocity & c wavelength vary v = in different n materials n = 1 •n = 2 Frequency remains constant v υ = λ © 2010, All Rights Reserved What are Optical Constants n , k Describe how materials and light interact. Complex Refractive Index : ñ= n+ ik – Describes how material changes the light wave. Alternatively … Complex Dielectric Function: ε = ε1+ iε2 – Describes how light changes the material. ε = ñ2 © 2010, All Rights Reserved 9 Complex Refractive Index ñ(λ) = n(λ) + ik(λ) n and k vary with wavelength n = “Refractive Index” – phase velocity = c/n – direction of propagation (refraction angle) k = “Extinction Coefficient” – Loss of wave energy to the material. Intensity is “Extinguished.” Io −α z I (z) = Ioe I(z) 4πk(λ) α(λ) = λ Dp z © 2010, All Rights Reserved Light at interface Interaction Reflections caused by index difference: Normal incidence: Oblique incidence 2 ()nn12− Reflection φ = φ R = i r 2 Refraction ()nn12+ Ñ 1 sin φ1 = Ñ 2 sin φ2 index, Ñ1 velocity, c φ1 φ1 index, Ñ2 velocity, v φ2 © 2010, All Rights Reserved 11 Polarized light at interface Electric field either parallel Ep Ep (p) or perpendicular (s) to plane of incidence. Es Es Material differentiates Ep between p- and s- light plane of incidence Es 1.0 Rp 0.8 Rs 0.6 0.4 Reflection 0.2 0.0 0 20 40 60 80 100 Angle of Incidence (°) © 2010, All Rights Reserved 12 Fresnel Coefficients Maxwell’s Equations at boundary conditions. Describes reflection and transmission rs,p n of polarized light (p or s). i Depends on angle, n(λ),k(λ) n t ts,p ⎛ E ⎞ n cosθ − n cosθ ⎛ E ⎞ 2n cosθ r = ⎜ r ⎟ = t i i t t = ⎜ t ⎟ = i i p ⎜ E ⎟ n cosθ + n cosθ p ⎜ E ⎟ n cosθ + n cosθ ⎝ i ⎠ p i t t i ⎝ i ⎠ p i t t i ⎛ E ⎞ n cosθ − n cosθ ⎛ E ⎞ 2n cosθ r = ⎜ r ⎟ = i i t t t = ⎜ t ⎟ = i i s ⎜ E ⎟ n cosθ + n cosθ s ⎜ E ⎟ n cosθ + n cosθ ⎝ i ⎠s i i t t ⎝ i ⎠s i i t t © 2010, All Rights Reserved What does Ellipsometry measure? Measures change in polarization of reflected light. ~ ~ out ~ in r E E Eout p / Ein p p = p p = ei()δ p −δ s = tan(ψ )eiΔ = ρ ~ ~ out ~ in rs Es Es Eout s / Ein s E p-plane s-plane p-plane E plane of incidence s-plane © 2010, All Rights Reserved 14 Optical constants from Ellipsometry Change in polarization is related to sample properties. ~ n cosθ − n cosθ r r ~ t i i t s,p p = tan Ψ eiΔ = ρ r = n ~ () p n cosθ + n cosθ i rs i t t i nt n cosθ − n cosθ ts,p ~r = i i t t s n cosθ + n cosθ i i t t n cosθ − n cosθ n cosθ − n cosθ ρ = ( t i i t )/( t i i t ) ni cosθt + nt cosθi ni cosθt + nt cosθi 2 For ni=1 ⎡ ⎤ ~ 2 2 2 ⎛1− ρ ⎞ ε = n = sin ()θi ⋅ ⎢1+ tan ()θi ⋅⎜ ⎟ ⎥ Easy! ⎣⎢ ⎝1+ ρ ⎠ ⎦⎥ © 2010, All Rights Reserved 15 Thin Film on Substrate Multiple reflections in single film lead to an infinite series -2iβ 2 -4iβ rtot = r01 + t01r12t10e + t01r12 r10t10e +... −i2β r t r t t r r r t r01( p,s) +r12(p,s)t01(p,s)t10(p,s)e 10 01 12 10 01 12 10 12 10 rtot( p,s) = −i2β No 1−r01(p,s)r12(p,s)e N1 FILM PHASE THICKNESS N2 t01t12 t01r12r10t12 t01r12r10r12r10t12 ⎛ d1 ⎞ β = 2π ⎜ ⎟n1 cosθ1 ⎝ λ ⎠ © 2010, All Rights Reserved Jones and Mueller Matrix Describe how sample changes polarization of light Light in Light out ⎛ So _ out ⎞ ⎡m11 m12 m13 m14 ⎤ ⎛ So _in ⎞ ⎜ ⎟ ⎢ ⎥ ⎜ ⎟ ⎡E ⎤ ⎡ j j ⎤⎡E ⎤ ⎜ S1_ out ⎟ m m m m ⎜ S1_ in ⎟ x−out = 11 12 x−in = ⎢ 21 22 23 24 ⎥ ⋅ ⎢ ⎥ ⎢ ⎥⎢ ⎥ ⎜ S ⎟ ⎜ S ⎟ E j j E 2_ out ⎢m31 m32 m33 m34 ⎥ 2_in ⎣ y−out ⎦ ⎣ 21 22 ⎦⎣ y−in ⎦ ⎜ ⎟ ⎢ ⎥ ⎜ ⎟ ⎜ S ⎟ ⎜ S ⎟ ⎝ 3_ out ⎠ ⎣m41 m42 m43 m44 ⎦ ⎝ 3_in ⎠ © 2010, All Rights Reserved 17 What is Ellipsometry? Measures change in polarization of reflected light. Ψ, Δ = function of ( n, k, d, λ, θ,…) E p-plane s-plane E p-plane plane of incidence s-plane © 2010, All Rights Reserved 18 Ellipsometer Components Measurement Example: Rotating Analyzer Ellipsometer S θ Rotating γ Polarizer sample analyzer A(t) = ωt = 2πft P Detector converts light to voltage V(t) Modulation ↔γ ~out ~in Ep Ep = tan()Ψ eiΔ θ t ~out ~in Es Es © 2010, All Rights Reserved Rotating Analyzer Limitations: Δ ‘handedness’ is not determined. Uncertainty in Δ near 0°, 180°. ⎡ 1 − N 0 0⎤ ⎢ ⎥ ⎢− N 1 0 0⎥ ⎢ 0 0 C S ⎥ ⎢ ⎥ ⎣ 0 0 − S C⎦ N = cos(2Ψ) C = sin()()2Ψ sin Δ S = sin()()2Ψ cos Δ No measure of S © 2010, All Rights Reserved 20 Rotating AnalyzerVASE with AutoRetarder ® Ellipsometer Light Source P Polarizer AR AutoRetarder © 2010, All Rights Reserved S Sample A Analyzer Detector 21 AutoRetarderTM AutoRetarderTM changes polarization delivered to sample for optimum measurement condition. ⎡ 1 − N 0 0⎤ ⎢ ⎥ ⎢− N 1 0 0⎥ ⎢ 0 0 C S ⎥ ⎢ ⎥ ⎣ 0 0 − S C⎦ Use it! © 2010, All Rights Reserved 22 Analysis What can SE determine? Properties of Interest: Ellipsometry Measures: Film Thickness Refractive Index Psi (Ψ) Surface Roughness Delta (Δ) Interfacial Mixing Composition Crystallinity Anisotropy Uniformity © 2010, All Rights Reserved 23 Data Content versus Sample Unknowns Ensure data contains information to solve all unknowns. SAMPLE UNKNOWNS DATA CONTENT Over-Determined DATA CONTENT SAMPLE UNKNOWNS DATA CONTENT SAMPLE UNKNOWNS Under-Determined © 2010, All Rights Reserved 24 Direct Solution Single reflection can be directly ‘inverted’ to get n,k. 2λ 2λ DATA UNKNOWNS Ag Experimental Data 8 1.8 Exp <k>-E 70° Exp <n>-E 70° 1.5 6 1.2 < n > k 4 0.9 > Ψ,Δ < φ 0.6 2 0.3 n,k 0 0.0 200 400 600 800 1000 Wavelength (nm) Single Interface Inversion equation: ⎡ 2 ⎤ ~ ~ 2 2 2 ⎛1− ρ ⎞ iΔ rp ε = n = sin ()φ ⋅ ⎢1+ tan ()φ ⋅⎜ ⎟ ⎥ where ρ = tan(Ψ)e = ⎜1+ ρ ⎟ ~ ⎣⎢ ⎝ ⎠ ⎦⎥ rs © 2010, All Rights Reserved 25 Regression Analysis Interference n,k film t Substrate For most samples - “inverse” problem Result is known instead of Cause. Ellipsometry Sample Structure Measurement Experimental Data 90 180 2 srough 20.00 Å 80 160 Exp -E 73° Ψ Δ 70 Exp Δ-E 73° indegrees 140 60 1 film 1500.00 Å 120 50 in degrees 100 40 0 silicon 1 mm Ψ 30 80 Yes 20 60 200 400 600 800 1000 Wavelength (nm) © 2010, All Rights Reserved Data Analysis Flowchart © 2010, All Rights Reserved 27 1. Measure Sample Collect Ψ,Δ versus angle versus wavelength © 2010, All Rights Reserved Data Acquisition Example: VASE® data acquisition parameters: © 2010, All Rights Reserved Ellipsometry Measurements Repeatable & accurate: – Self-referencing, measures ratio of Ep/Es Thus, reduced problems with: • fluctuation of source intensity • light beam spilling over small samples Measure two parameters Psi and Delta – increased sensitivity to multiple film parameters © 2010, All Rights Reserved 2. Build Model Propose a layered structure Describes Thickness and Optical Constants of all layers t2 n,k (film 2) t1 n,k (film 1) n,k (substrate) © 2010, All Rights Reserved 31 3. Generated data Generated and Experimental Calculate response from 80 Model Fit Exp E 70° model 60 Exp E 75° 40 in degrees Ψ 20 Compare to Experimental 0 data. 300 600 900 1200 1500 1800 Wavelength (nm) Generated and Experimental 80 60 Adjust unknown (fit) parameters to get close to 40 in degrees Model Fit Ψ Exp E 70° solution. 20 Exp E 75° 0 300 600 900 1200 1500 1800 Wavelength (nm) © 2010, All Rights Reserved 32 4. Data Fit •100 Software adjusts “fit” •80 •60 parameters to find ••40 in degrees Ψ • best match •20 •0 between model •200 •400 •600 •800 •1000 and experiment. •Wavelength (nm) MSE is Difference. MSE Thickness © 2010, All Rights Reserved Mean Squared Error Mean Squared Error (MSE) used to quantify the difference between experimental and model- generated data.
Recommended publications
  • Characterization of an Active Metasurface Using Terahertz Ellipsometry Nicholas Karl, Martin S
    Characterization of an active metasurface using terahertz ellipsometry Nicholas Karl, Martin S. Heimbeck, Henry O. Everitt, Hou-Tong Chen, Antoinette J. Taylor, Igal Brener, Alexander Benz, John L. Reno, Rajind Mendis, and Daniel M. Mittleman Citation: Appl. Phys. Lett. 111, 191101 (2017); View online: https://doi.org/10.1063/1.5004194 View Table of Contents: http://aip.scitation.org/toc/apl/111/19 Published by the American Institute of Physics APPLIED PHYSICS LETTERS 111, 191101 (2017) Characterization of an active metasurface using terahertz ellipsometry Nicholas Karl,1 Martin S. Heimbeck,2 Henry O. Everitt,2 Hou-Tong Chen,3 Antoinette J. Taylor,3 Igal Brener,4 Alexander Benz,4 John L. Reno,4 Rajind Mendis,1 and Daniel M. Mittleman1 1School of Engineering, Brown University, 184 Hope St., Providence, Rhode Island 02912, USA 2U.S. Army AMRDEC, Redstone Arsenal, Huntsville, Alabama 35808, USA 3Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA 4Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA (Received 11 September 2017; accepted 19 October 2017; published online 6 November 2017) Switchable metasurfaces fabricated on a doped epi-layer have become an important platform for developing techniques to control terahertz (THz) radiation, as a DC bias can modulate the transmis- sion characteristics of the metasurface. To model and understand this performance in new device configurations accurately, a quantitative understanding of the bias-dependent surface characteristics is required. We perform THz variable angle spectroscopic ellipsometry on a switchable metasur- face as a function of DC bias. By comparing these data with numerical simulations, we extract a model for the response of the metasurface at any bias value.
    [Show full text]
  • Optical Characterization of Ultra-Thin Films of Azo-Dye-Doped Polymers Using Ellipsometry and Surface Plasmon Resonance Spectroscopy
    hv photonics Article Optical Characterization of Ultra-Thin Films of Azo-Dye-Doped Polymers Using Ellipsometry and Surface Plasmon Resonance Spectroscopy Najat Andam 1,2 , Siham Refki 2, Hidekazu Ishitobi 3,4, Yasushi Inouye 3,4 and Zouheir Sekkat 1,2,4,* 1 Department of Chemistry, Faculty of Sciences, Mohammed V University, Rabat BP 1014, Morocco; [email protected] 2 Optics and Photonics Center, Moroccan Foundation for Advanced Science, Innovation and Research, Rabat BP 10100, Morocco; [email protected] 3 Frontiers Biosciences, Osaka University, Osaka 565-0871, Japan; [email protected] (H.I.); [email protected] (Y.I.) 4 Department of Applied Physics, Osaka University, Osaka 565-0871, Japan * Correspondence: [email protected] Abstract: The determination of optical constants (i.e., real and imaginary parts of the complex refractive index (nc) and thickness (d)) of ultrathin films is often required in photonics. It may be done by using, for example, surface plasmon resonance (SPR) spectroscopy combined with either profilometry or atomic force microscopy (AFM). SPR yields the optical thickness (i.e., the product of nc and d) of the film, while profilometry and AFM yield its thickness, thereby allowing for the separate determination of nc and d. In this paper, we use SPR and profilometry to determine the complex refractive index of very thin (i.e., 58 nm) films of dye-doped polymers at different dye/polymer concentrations (a feature which constitutes the originality of this work), and we compare the SPR results with those obtained by using spectroscopic ellipsometry measurements performed on the Citation: Andam, N.; Refki, S.; Ishitobi, H.; Inouye, Y.; Sekkat, Z.
    [Show full text]
  • Use of Spectroscopic Ellipsometry and Modeling in Determining Composition and Thickness of Barium Strontium Titanate Thin-Films
    Use of Spectroscopic Ellipsometry and Modeling in Determining Composition and Thickness of Barium Strontium Titanate Thin-Films A Thesis Submitted to the Faculty of Drexel University by Dominic G. Bruzzese III in partial fulfillment of the requirements for the degree of MS in Materials Science and Engineering June 2010 c Copyright June 2010 Dominic G. Bruzzese III. All Rights Reserved. Acknowledgements I would like to acknowledge the guidance and motivation I received from my advi- sor Dr. Jonathan Spanier not just during my thesis but for my entire stay at Drexel University. Eric Gallo for his help as my graduate student mentor and always making himself available to help me with everything from performing an experiment to ana- lyzing some result, he has been an immeasurable resource. Keith Fahnestock and the Natural Polymers and Photonics Group under the direction of Dr. Caroline Schauer for allowing the use of their ellipsometer, without which this work would not have been possible. I would like to thank everyone in the MesoMaterials Laboratory, espe- cially Stephen Nonenmann, Stephanie Johnson, Guannan Chen, Christopher Hawley, Brian Beatty, Joan Burger, and Andrew Akbasheu for help with experiments, as well as Oren Leffer and Terrence McGuckin for enlightening discussions. Claire Weiss and Dr. Pamir Alpay at the University of Connecticut have both contributed much to the the field and I am grateful for their work; also Claire produced the MOSD samples on which much of the characterization and modeling was done. Dr. Melanie Cole and the Army Research Office and Dr. Marc Ulrich for funding the project under W911NF-08-0124 and W911NF-08-0067.
    [Show full text]
  • Ellipsometry
    AALBORG UNIVERSITY Institute of Physics and Nanotechnology Pontoppidanstræde 103 - 9220 Aalborg Øst - Telephone 96 35 92 15 TITLE: Ellipsometry SYNOPSIS: This project concerns measurement of the re- fractive index of various materials and mea- PROJECT PERIOD: surement of the thickness of thin films on sili- September 1st - December 21st 2004 con substrates by use of ellipsometry. The el- lipsometer used in the experiments is the SE 850 photometric rotating analyzer ellipsome- ter from Sentech. THEME: After an introduction to ellipsometry and a Detection of Nanostructures problem description, the subjects of polar- ization and essential ellipsometry theory are covered. PROJECT GROUP: The index of refraction for silicon, alu- 116 minum, copper and silver are modelled us- ing the Drude-Lorentz harmonic oscillator model and afterwards measured by ellipsom- etry. The results based on the measurements GROUP MEMBERS: show a tendency towards, but are not ade- Jesper Jung quately close to, the table values. The mate- Jakob Bork rials are therefore modelled with a thin layer of oxide, and the refractive indexes are com- Tobias Holmgaard puted. This model yields good results for the Niels Anker Kortbek refractive index of silicon and copper. For aluminum the result is improved whereas the result for silver is not. SUPERVISOR: The thickness of a thin film of SiO2 on a sub- strate of silicon is measured by use of ellip- Kjeld Pedersen sometry. The result is 22.9 nm which deviates from the provided information by 6.5 %. The thickness of two thick (multiple wave- NUMBERS PRINTED: 7 lengths) thin polymer films are measured. The polymer films have been spin coated on REPORT PAGE NUMBER: 70 substrates of silicon and the uniformities of the surfaces are investigated.
    [Show full text]
  • A Dissertation Entitled Spectroscopic Ellipsometry Studies of Thin Film Si
    A Dissertation entitled Spectroscopic Ellipsometry Studies of Thin Film Si:H Materials in Photovoltaic Applications from Infrared to Ultraviolet by Laxmi Karki Gautam Submitted to the Graduate Faculty as partial fulfillment of the requirements for the Doctor of Philosophy Degree in Physics _________________________________________ Dr. Nikolas J. Podraza, Committee Chair _________________________________________ Dr. Robert W. Collins, Committee Member _________________________________________ Dr. Randall Ellingson, Committee Member _________________________________________ Dr. Song Cheng, Committee Member _________________________________________ Dr. Rashmi Jha, Committee Member _________________________________________ Dr. Patricia R. Komuniecki, Dean College of Graduate Studies The University of Toledo May, 2016 Copyright 2016, Laxmi Karki Gautam This document is copyrighted material. Under copyright law, no parts of this document may be reproduced without the expressed permission of the author. An Abstract of Spectroscopic Ellipsometry Studies of Thin Film Si:H Materials in Photovoltaic Applications from Infrared to Ultraviolet by Laxmi Karki Gautam Submitted to the Graduate Faculty as partial fulfillment of the requirements for the Doctor of Philosophy Degree in Physics The University of Toledo May 2016 Optimization of thin film photovoltaics (PV) relies on the capability for characterizing the optoelectronic and structural properties of each layer in the device over large areas and correlating these properties with device performance. This work builds heavily upon that done previously by us, our collaborators, and other researchers. It provides the next step in data analyses, particularly that involving study of films in device configurations maintaining the utmost sensitivity within those same device structures. In this Dissertation, the component layers of thin film hydrogenated silicon (Si:H) solar cells on rigid substrate materials have been studied by real time spectroscopic ellipsometry (RTSE) and ex situ spectroscopic ellipsometry (SE).
    [Show full text]
  • Optical Properties of Teflon AF Amorphous Fluoropolymers
    J. Micro/Nanolith. MEMS MOEMS 7͑3͒, 033010 ͑Jul–Sep 2008͒ Optical properties of Teflon® AF amorphous fluoropolymers MinK.Yang Abstract. The optical properties of three grades of Teflon® AF— Roger H. French AF1300, AF1601, and AF2400—were investigated using a J.A. Woollam DuPont Co. Central Research VUV-VASE spectroscopic ellipsometry system. The refractive indices for Experimental Station each grade were obtained from multiple measurements with different film Wilmington, Delaware 19880-0400 thicknesses on Si substrates. The absorbances of Teflon® AF films were E-mail: [email protected] determined by measuring the transmission intensity of Teflon® AF films on CaF2 substrates. In addition to the refractive index and absorbance per cm ͑base 10͒, the extinction coefficient ͑k͒, and absorption coefficient Edward W. Tokarsky ͑␣͒ per cm ͑base e͒, Urbach parameters of absorption edge position and DuPont Fluoropolymer Solutions edge width, and two-pole Sellmeier parameters were determined for the Chestnut Run Plaza three grades of Teflon® AF. We found that the optical properties of the Wilmington, Delaware 19880-0713 three grades of Teflon® AF varied systematically with the AF TFE/PDD composition. The indices of refraction, extinction coefficient ͑k͒, absorp- tion coefficient ͑␣͒, and absorbance ͑A͒ increased, as did the TFE con- tent, while the PDD content decreased. In addition, the Urbach edge position moved to a longer wavelength, and the Urbach edge width became wider. © 2008 Society of Photo-Optical Instrumentation Engineers. ͓DOI: 10.1117/1.2965541͔ Subject terms: fluoropolymer; absorbance absorption coefficient; VUV ellipsometry. Paper 07086R received Oct. 24, 2007; revised manuscript received May 16, 2008; accepted for publication Jun.
    [Show full text]
  • Implementation of Optical Interferometry and Spectral Reflectometry for High Fidelity Thin Film Measurements
    University of Central Florida STARS Electronic Theses and Dissertations, 2004-2019 2017 Implementation of Optical Interferometry and Spectral Reflectometry for High Fidelity Thin Film Measurements Armando Arends-Rodriguez University of Central Florida Part of the Aerodynamics and Fluid Mechanics Commons Find similar works at: https://stars.library.ucf.edu/etd University of Central Florida Libraries http://library.ucf.edu This Masters Thesis (Open Access) is brought to you for free and open access by STARS. It has been accepted for inclusion in Electronic Theses and Dissertations, 2004-2019 by an authorized administrator of STARS. For more information, please contact [email protected]. STARS Citation Arends-Rodriguez, Armando, "Implementation of Optical Interferometry and Spectral Reflectometry for High Fidelity Thin Film Measurements" (2017). Electronic Theses and Dissertations, 2004-2019. 5440. https://stars.library.ucf.edu/etd/5440 IMPLEMENTATION OF OPTICAL INTERFEROMETRY AND SPECTRAL REFLECTOMETRY FOR HIGH FIDELITY THIN FILM MEASUREMENTS by ARMANDO ANDRE ARENDS-RODRIGUEZ B.S. University of Central Florida, 2015 A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in the Department of Mechanical and Aerospace Engineering in the College of Engineering and Computer Science at the University of Central Florida Orlando, Florida Spring Term 2017 Major Professor: Shawn A. Putnam ABSTRACT An in-house reflectometer/interferometer has been built to investigate the varying curvature and thickness profiles in the contact line region of air, acetone, iso-octane, ethanol, and water on various types of substrates. Light intensity measurements were obtained using our reflectometer/interferomter and then analyzed in MATLAB to produce thickness and curvature profiles.
    [Show full text]
  • Ellipsometry for Csige Metrology
    Ellipsometry for cSiGe Metrology Saiqa Farhat, Srinivasan Rangarajan, Timothy J. Dawei Hu, Ming Dai Mcardle, Michael Steigerwalt Films Metrology Division 300mm East Fishkill KLA Tencor Corp. IBM Corp San Jose, CA Hopewell Jn, NY, USA Abstract— In this paper we report the effectiveness of sensitive to the refractive index and thickness of the films in optical ellipsometry in measuring thickness and Germanium % the stack. Next, the elliptically polarized light will pass through of channel SiGe on SOI substrate used in advanced node high the analyzer and become linear polarized light again. Finally, performance semiconductor devices. the detector will receive the linear polarized light signal. The value tanΨ and cosΔ are extracted as a function of wavelength. Keywords—cSiGe, Ellipsometry, Thickness, Ge These are called the measured spectra. Concentration, metrology. I. INTRODUCTION Optical metrology of film thickness is the “work-horse” technique in semiconductor fabrication for control of a wide variety of processes. The tools and their technology are well established, providing low cost of ownership (COO) to manufacturers by giving fast and reliable feedback to their processes. In this study we demonstrate the successful implementation of optical metrology for cSiGe process control replacing a X-ray diffraction technique. The performance of SiGe channel in devices is dependent on film thickness and %Ge. X-ray diffraction (XRD) technique measures the change Figure 1: SE measurement optics schematic in lattice spacing of the strained silicon which is well correlated with %Ge in the film [1]. The technique is slow and new, posing challenges in manufacturing. Optical metrology on the other hand is a model based technique relying on the ability to B.
    [Show full text]
  • Introduction to Neutron Reflectometry
    INTRODUCTION TO NEUTRON REFLECTOMETRY Giovanna Fragneto Institut Laue-Langevin The importance of interfaces They are everywhere: our body, food we eat, drinks, plants, animals, soil, atmosphere, manufacturing, chemical factories…. In many cases interfaces have a significant effect in the behaviour of a system ! Examples: Inner lining of lung: surfactants prevent lung from collapsing at the end of expiration Nanotechnology: solid surfaces are the places where the processes of interest take place Detergency! Biofouling Why Neutron Reflectometry? Probe relevant lengths (Å to µm) Sensitive to light elements (H, C, O, N) Buried systems and complex sample environment Possibility of isotopic labelling Non-destructive REFLECTOMETRY 1-5000 Å Specular θi=θf Reflectivity •Thickness of layers at measurements: interfaces •Roughness/interdiffusion •Composition in the direction normal to the interface MomentumMomentum transfer transfer parallel in xz plane surface normal In-plane features (height fluctuations, domains, holes ...) can be probed by off- specular measurements: for thin films synchrotron radiation is more suitable Scattering length density profile extracted from data analysis Liquid D2O z Solid Si-SiO2 1675 - Newton realised that the colour of the light reflected by a thin film illuminated by a parallel beam of white light could be used to obtain a measure of the film thickness. Spectral colours develop as a result of interference between light reflected from the front and back surfaces of the film. 1922 - Compton showed that x-ray reflection is governed by the same laws as reflection of light but with different refractive indices depending on the number of electrons per unit volume. 1944 - Fermi and Zinn first demonstrated the mirror reflection of neutrons.
    [Show full text]
  • Infrared Spectroscopy and Ellipsometry of Magnetic Metamaterials
    Invited Paper Infrared spectroscopy and ellipsometry of magnetic metamaterials W.J. Padilla1, Ta Jen Yen2, N. Fang2, D.C. Vier3, David R. Smith4, J.B. Pendry5, X. Zhang2, D.N. Basov3 1Los Alamos National Laboratory, MS K764 MST-10, Los Alamos, NM 87545. 2Department of Mechanical and Aerospace Engineering, University of California at Los Angeles, 420 Westwood Plaza, Los Angeles, CA 90095. 3Department of Physics, University of California San Diego, La Jolla, California 92093-0319. 4Department of Electrical & Computer Engineering, Durham, NC 27708-0291. 5Condensed Matter Theory Group, Blackett Laboratory, Imperial College, London SW7 2AZ, UK. ABSTRACT We present S and P polarized measurements of artificial bianisotropic magnetic metamaterials with resonant behavior at infrared frequencies. These metamaterials consist of an array of micron sized (~40µm) copper rings fabricated upon a quartz substrate. Simulation of the reflectance is obtained through a combination of electromagnetic eigenmode simulation and Jones matrix analysis, and we find excellent agreement with the experimental data. It is shown that although the artificial magnetic materials do indeed exhibit a magnetic response, care must be taken to avoid an undesirable electric dipole resonance, due to lack of reflection symmetry in one orientation. The effects of bianisotropy on negative index are detailed and shown to be beneficial for certain configurations of the material parameters. Keywords: THz, meta material, left handed, negative index, bianisotropy, chiral, ellipsometry 1. INTRODUCTION Recently the field of electromagnetism has seen significant excitement and rapid growth, due the discovery of left- handed metamaterials.i These artificially constructed materials are capable of achieving simultaneous values of negative electric (ε<0) and negative magnetic (µ<0) response, a feat that is difficult or impossible to achieve with naturally occurring materials.
    [Show full text]
  • 1 Narrowband Metamaterial Absorber for Terahertz Secure Labeling
    Narrowband Metamaterial Absorber for Terahertz Secure Labeling Magued Nasr *a, Jonathan T. Richard *d, Scott A. Skirlo *b, Martin S. Heimbeck c, John D. Joannopoulos,b Marin Soljacic b, Henry O. Everitt c†, Lawrence Domash a * Equal contributors a Triton Systems Inc., 200 Turnpike Rd #2, Chelmsford, MA 01824 b Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 c U.S. Army Aviation and Missile RD&E Center, Redstone Arsenal, AL 35898 d IERUS Technologies, 2904 Westcorp Blvd Suite 210, Huntsville, AL 35805 † Corresponding author: [email protected] Abstract Flexible metamaterial films, fabricated by photolithography on a thin copper-backed polyimide substrate, are used to mark or barcode objects securely. The films are characterized by continuous wave terahertz spectroscopic ellipsometry and visualized by a scanning confocal imager coupled to a vector network analyzer that constructed a terahertz spectral hypercube. These films exhibit a strong, narrowband, polarization- and angle-insensitive absorption at wavelengths near one millimeter. Consequently, the films are nearly indistinguishable at visible or infrared wavelengths and may be easily observed by terahertz imaging only at the resonance frequency of the film. 1 Introduction Terahertz radiation in the long wavelength 1 - 3 mm band penetrates dry dielectrics such as plastics, concrete, and fabric while being strongly absorbed by water and water vapor. This combination of characteristics may be exploited for numerous applications including short-range communications and radar, collision avoidance radar, non-destructive testing of materials and structures, security imaging, medical diagnosis, and spectroscopy.[1,2,3] Materials with interesting terahertz properties also play a role in numerous security applications due to their limited range and high bandwidth.
    [Show full text]
  • SOLID STATE PHYSICS PART II Optical Properties of Solids
    SOLID STATE PHYSICS PART II Optical Properties of Solids M. S. Dresselhaus 1 Contents 1 Review of Fundamental Relations for Optical Phenomena 1 1.1 Introductory Remarks on Optical Probes . 1 1.2 The Complex dielectric function and the complex optical conductivity . 2 1.3 Relation of Complex Dielectric Function to Observables . 4 1.4 Units for Frequency Measurements . 7 2 Drude Theory{Free Carrier Contribution to the Optical Properties 8 2.1 The Free Carrier Contribution . 8 2.2 Low Frequency Response: !¿ 1 . 10 ¿ 2.3 High Frequency Response; !¿ 1 . 11 À 2.4 The Plasma Frequency . 11 3 Interband Transitions 15 3.1 The Interband Transition Process . 15 3.1.1 Insulators . 19 3.1.2 Semiconductors . 19 3.1.3 Metals . 19 3.2 Form of the Hamiltonian in an Electromagnetic Field . 20 3.3 Relation between Momentum Matrix Elements and the E®ective Mass . 21 3.4 Spin-Orbit Interaction in Solids . 23 4 The Joint Density of States and Critical Points 27 4.1 The Joint Density of States . 27 4.2 Critical Points . 30 5 Absorption of Light in Solids 36 5.1 The Absorption Coe±cient . 36 5.2 Free Carrier Absorption in Semiconductors . 37 5.3 Free Carrier Absorption in Metals . 38 5.4 Direct Interband Transitions . 41 5.4.1 Temperature Dependence of Eg . 46 5.4.2 Dependence of Absorption Edge on Fermi Energy . 46 5.4.3 Dependence of Absorption Edge on Applied Electric Field . 47 5.5 Conservation of Crystal Momentum in Direct Optical Transitions . 47 5.6 Indirect Interband Transitions .
    [Show full text]