1 Narrowband Metamaterial Absorber for Terahertz Secure Labeling
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Plasmonic and Metamaterial Structures As Electromagnetic Absorbers
Plasmonic and Metamaterial Structures as Electromagnetic Absorbers Yanxia Cui 1,2, Yingran He1, Yi Jin1, Fei Ding1, Liu Yang1, Yuqian Ye3, Shoumin Zhong1, Yinyue Lin2, Sailing He1,* 1 State Key Laboratory of Modern Optical Instrumentation, Centre for Optical and Electromagnetic Research, Zhejiang University, Hangzhou 310058, China 2 Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education and Shanxi Province, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan, 030024, China 3 Department of Physics, Hangzhou Normal University, Hangzhou 310012, China Corresponding author: e-mail [email protected] Abstract: Electromagnetic absorbers have drawn increasing attention in many areas. A series of plasmonic and metamaterial structures can work as efficient narrow band absorbers due to the excitation of plasmonic or photonic resonances, providing a great potential for applications in designing selective thermal emitters, bio-sensing, etc. In other applications such as solar energy harvesting and photonic detection, the bandwidth of light absorbers is required to be quite broad. Under such a background, a variety of mechanisms of broadband/multiband absorption have been proposed, such as mixing multiple resonances together, exciting phase resonances, slowing down light by anisotropic metamaterials, employing high loss materials and so on. 1. Introduction physical phenomena associated with planar or localized SPPs [13,14]. Electromagnetic (EM) wave absorbers are devices in Metamaterials are artificial assemblies of structured which the incident radiation at the operating wavelengths elements of subwavelength size (i.e., much smaller than can be efficiently absorbed, and then transformed into the wavelength of the incident waves) [15]. They are often ohmic heat or other forms of energy. -
All-Metal Terahertz Metamaterial Absorber and Refractive Index Sensing Performance
hv photonics Communication All-Metal Terahertz Metamaterial Absorber and Refractive Index Sensing Performance Jing Yu, Tingting Lang * and Huateng Chen Institute of Optoelectronic Technology, China Jiliang University, Hangzhou 310018, China; [email protected] (J.Y.); [email protected] (H.C.) * Correspondence: [email protected] Abstract: This paper presents a terahertz (THz) metamaterial absorber made of stainless steel. We found that the absorption rate of electromagnetic waves reached 99.95% at 1.563 THz. Later, we ana- lyzed the effect of structural parameter changes on absorption. Finally, we explored the application of the absorber in refractive index sensing. We numerically demonstrated that when the refractive index (n) is changing from 1 to 1.05, our absorber can yield a sensitivity of 74.18 µm/refractive index unit (RIU), and the quality factor (Q-factor) of this sensor is 36.35. Compared with metal–dielectric–metal sandwiched structure, the absorber designed in this paper is made of stainless steel materials with no sandwiched structure, which greatly simplifies the manufacturing process and reduces costs. Keywords: metamaterial absorber; stainless steel; refractive index sensing; sensitivity 1. Introduction Metamaterials are new artificial materials that are periodically arranged according to certain subwavelength dimensions [1,2]. Owing to their unique properties of perfect absorption, perfect transmission, and stealth, metamaterials show promising applications Citation: Yu, J.; Lang, T.; Chen, H. in sensors [3–11], absorbers [12,13], imaging [14,15], etc. Among them, in biomolecular All-Metal Terahertz Metamaterial sensing, metamaterial devices are spurring unprecedented interest as a diagnostic protocol Absorber and Refractive Index for cancer and infectious diseases [10,11]. -
A Metamaterial Frequency-Selective Super-Absorber That Has Absorbing Cross Section Significantly Bigger Than the Geometric Cross Section
A metamaterial frequency-selective super-absorber that has absorbing cross section significantly bigger than the geometric cross section Jack Ng*, Huanyang Chen*,†, and C. T. Chan Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China Abstract Using the idea of transformation optics, we propose a metamaterial device that serves as a frequency-selective super-absorber, which consists of an absorbing core material coated with a shell of isotropic double negative metamaterial. For a fixed volume, the absorption cross section of the super-absorber can be made arbitrarily large at one frequency. The double negative shell serves to amplify the evanescent tail of the high order incident cylindrical waves, which induces strong scattering and absorption. Our conclusion is supported by both analytical Mie theory and numerical finite element simulation. Interesting applications of such a device are discussed. I. Introduction It is possible for a particle to absorb more than the light incident on it. Bohren gave explicit examples in which a small particle can absorb better than a perfect black body of the same size. Examples of such type include a silver particle excited at its surface plasmon resonance and a silicon carbide particle at its surface phonon polariton resonance.1 However, such mechanism is typically limited to very small particles, and for a fixed particle volume, the absorption cross section cannot increase without bound. We shall show in this article that it is possible to design, within the framework of transformation optics,2,3 a device whose absorption efficiency can be arbitrarily large, at least in principle. -
Characterization of an Active Metasurface Using Terahertz Ellipsometry Nicholas Karl, Martin S
Characterization of an active metasurface using terahertz ellipsometry Nicholas Karl, Martin S. Heimbeck, Henry O. Everitt, Hou-Tong Chen, Antoinette J. Taylor, Igal Brener, Alexander Benz, John L. Reno, Rajind Mendis, and Daniel M. Mittleman Citation: Appl. Phys. Lett. 111, 191101 (2017); View online: https://doi.org/10.1063/1.5004194 View Table of Contents: http://aip.scitation.org/toc/apl/111/19 Published by the American Institute of Physics APPLIED PHYSICS LETTERS 111, 191101 (2017) Characterization of an active metasurface using terahertz ellipsometry Nicholas Karl,1 Martin S. Heimbeck,2 Henry O. Everitt,2 Hou-Tong Chen,3 Antoinette J. Taylor,3 Igal Brener,4 Alexander Benz,4 John L. Reno,4 Rajind Mendis,1 and Daniel M. Mittleman1 1School of Engineering, Brown University, 184 Hope St., Providence, Rhode Island 02912, USA 2U.S. Army AMRDEC, Redstone Arsenal, Huntsville, Alabama 35808, USA 3Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA 4Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA (Received 11 September 2017; accepted 19 October 2017; published online 6 November 2017) Switchable metasurfaces fabricated on a doped epi-layer have become an important platform for developing techniques to control terahertz (THz) radiation, as a DC bias can modulate the transmis- sion characteristics of the metasurface. To model and understand this performance in new device configurations accurately, a quantitative understanding of the bias-dependent surface characteristics is required. We perform THz variable angle spectroscopic ellipsometry on a switchable metasur- face as a function of DC bias. By comparing these data with numerical simulations, we extract a model for the response of the metasurface at any bias value. -
Optical Characterization of Ultra-Thin Films of Azo-Dye-Doped Polymers Using Ellipsometry and Surface Plasmon Resonance Spectroscopy
hv photonics Article Optical Characterization of Ultra-Thin Films of Azo-Dye-Doped Polymers Using Ellipsometry and Surface Plasmon Resonance Spectroscopy Najat Andam 1,2 , Siham Refki 2, Hidekazu Ishitobi 3,4, Yasushi Inouye 3,4 and Zouheir Sekkat 1,2,4,* 1 Department of Chemistry, Faculty of Sciences, Mohammed V University, Rabat BP 1014, Morocco; [email protected] 2 Optics and Photonics Center, Moroccan Foundation for Advanced Science, Innovation and Research, Rabat BP 10100, Morocco; [email protected] 3 Frontiers Biosciences, Osaka University, Osaka 565-0871, Japan; [email protected] (H.I.); [email protected] (Y.I.) 4 Department of Applied Physics, Osaka University, Osaka 565-0871, Japan * Correspondence: [email protected] Abstract: The determination of optical constants (i.e., real and imaginary parts of the complex refractive index (nc) and thickness (d)) of ultrathin films is often required in photonics. It may be done by using, for example, surface plasmon resonance (SPR) spectroscopy combined with either profilometry or atomic force microscopy (AFM). SPR yields the optical thickness (i.e., the product of nc and d) of the film, while profilometry and AFM yield its thickness, thereby allowing for the separate determination of nc and d. In this paper, we use SPR and profilometry to determine the complex refractive index of very thin (i.e., 58 nm) films of dye-doped polymers at different dye/polymer concentrations (a feature which constitutes the originality of this work), and we compare the SPR results with those obtained by using spectroscopic ellipsometry measurements performed on the Citation: Andam, N.; Refki, S.; Ishitobi, H.; Inouye, Y.; Sekkat, Z. -
Use of Spectroscopic Ellipsometry and Modeling in Determining Composition and Thickness of Barium Strontium Titanate Thin-Films
Use of Spectroscopic Ellipsometry and Modeling in Determining Composition and Thickness of Barium Strontium Titanate Thin-Films A Thesis Submitted to the Faculty of Drexel University by Dominic G. Bruzzese III in partial fulfillment of the requirements for the degree of MS in Materials Science and Engineering June 2010 c Copyright June 2010 Dominic G. Bruzzese III. All Rights Reserved. Acknowledgements I would like to acknowledge the guidance and motivation I received from my advi- sor Dr. Jonathan Spanier not just during my thesis but for my entire stay at Drexel University. Eric Gallo for his help as my graduate student mentor and always making himself available to help me with everything from performing an experiment to ana- lyzing some result, he has been an immeasurable resource. Keith Fahnestock and the Natural Polymers and Photonics Group under the direction of Dr. Caroline Schauer for allowing the use of their ellipsometer, without which this work would not have been possible. I would like to thank everyone in the MesoMaterials Laboratory, espe- cially Stephen Nonenmann, Stephanie Johnson, Guannan Chen, Christopher Hawley, Brian Beatty, Joan Burger, and Andrew Akbasheu for help with experiments, as well as Oren Leffer and Terrence McGuckin for enlightening discussions. Claire Weiss and Dr. Pamir Alpay at the University of Connecticut have both contributed much to the the field and I am grateful for their work; also Claire produced the MOSD samples on which much of the characterization and modeling was done. Dr. Melanie Cole and the Army Research Office and Dr. Marc Ulrich for funding the project under W911NF-08-0124 and W911NF-08-0067. -
Ellipsometry
AALBORG UNIVERSITY Institute of Physics and Nanotechnology Pontoppidanstræde 103 - 9220 Aalborg Øst - Telephone 96 35 92 15 TITLE: Ellipsometry SYNOPSIS: This project concerns measurement of the re- fractive index of various materials and mea- PROJECT PERIOD: surement of the thickness of thin films on sili- September 1st - December 21st 2004 con substrates by use of ellipsometry. The el- lipsometer used in the experiments is the SE 850 photometric rotating analyzer ellipsome- ter from Sentech. THEME: After an introduction to ellipsometry and a Detection of Nanostructures problem description, the subjects of polar- ization and essential ellipsometry theory are covered. PROJECT GROUP: The index of refraction for silicon, alu- 116 minum, copper and silver are modelled us- ing the Drude-Lorentz harmonic oscillator model and afterwards measured by ellipsom- etry. The results based on the measurements GROUP MEMBERS: show a tendency towards, but are not ade- Jesper Jung quately close to, the table values. The mate- Jakob Bork rials are therefore modelled with a thin layer of oxide, and the refractive indexes are com- Tobias Holmgaard puted. This model yields good results for the Niels Anker Kortbek refractive index of silicon and copper. For aluminum the result is improved whereas the result for silver is not. SUPERVISOR: The thickness of a thin film of SiO2 on a sub- strate of silicon is measured by use of ellip- Kjeld Pedersen sometry. The result is 22.9 nm which deviates from the provided information by 6.5 %. The thickness of two thick (multiple wave- NUMBERS PRINTED: 7 lengths) thin polymer films are measured. The polymer films have been spin coated on REPORT PAGE NUMBER: 70 substrates of silicon and the uniformities of the surfaces are investigated. -
A Dissertation Entitled Spectroscopic Ellipsometry Studies of Thin Film Si
A Dissertation entitled Spectroscopic Ellipsometry Studies of Thin Film Si:H Materials in Photovoltaic Applications from Infrared to Ultraviolet by Laxmi Karki Gautam Submitted to the Graduate Faculty as partial fulfillment of the requirements for the Doctor of Philosophy Degree in Physics _________________________________________ Dr. Nikolas J. Podraza, Committee Chair _________________________________________ Dr. Robert W. Collins, Committee Member _________________________________________ Dr. Randall Ellingson, Committee Member _________________________________________ Dr. Song Cheng, Committee Member _________________________________________ Dr. Rashmi Jha, Committee Member _________________________________________ Dr. Patricia R. Komuniecki, Dean College of Graduate Studies The University of Toledo May, 2016 Copyright 2016, Laxmi Karki Gautam This document is copyrighted material. Under copyright law, no parts of this document may be reproduced without the expressed permission of the author. An Abstract of Spectroscopic Ellipsometry Studies of Thin Film Si:H Materials in Photovoltaic Applications from Infrared to Ultraviolet by Laxmi Karki Gautam Submitted to the Graduate Faculty as partial fulfillment of the requirements for the Doctor of Philosophy Degree in Physics The University of Toledo May 2016 Optimization of thin film photovoltaics (PV) relies on the capability for characterizing the optoelectronic and structural properties of each layer in the device over large areas and correlating these properties with device performance. This work builds heavily upon that done previously by us, our collaborators, and other researchers. It provides the next step in data analyses, particularly that involving study of films in device configurations maintaining the utmost sensitivity within those same device structures. In this Dissertation, the component layers of thin film hydrogenated silicon (Si:H) solar cells on rigid substrate materials have been studied by real time spectroscopic ellipsometry (RTSE) and ex situ spectroscopic ellipsometry (SE). -
Tunable Infrared Metamaterial Emitter for Gas Sensing Application
nanomaterials Article Tunable Infrared Metamaterial Emitter for Gas Sensing Application Ruijia Xu and Yu-Sheng Lin * State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China; [email protected] * Correspondence: [email protected] Received: 17 June 2020; Accepted: 22 July 2020; Published: 24 July 2020 Abstract: We present an on-chip tunable infrared (IR) metamaterial emitter for gas sensing applications. The proposed emitter exhibits high electrical-thermal-optical efficiency, which can be realized by the integration of microelectromechanical system (MEMS) microheaters and IR metamaterials. According to the blackbody radiation law, high-efficiency IR radiation can be generated by driving a Direct Current (DC) bias voltage on a microheater. The MEMS microheater has a Peano-shaped microstructure, which exhibits great heating uniformity and high energy conversion efficiency. The implantation of a top metamaterial layer can narrow the bandwidth of the radiation spectrum from the microheater to perform wavelength-selective and narrow-band IR emission. A linear relationship between emission wavelengths and deformation ratios provides an effective approach to meet the requirement at different IR wavelengths by tailoring the suitable metamaterial pattern. The maximum radiated power of the proposed IR emitter is 85.0 µW. Furthermore, a tunable emission is achieved at a wavelength around 2.44 µm with a full-width at half-maximum of 0.38 µm, which is suitable for high-sensitivity gas sensing applications. This work provides a strategy for electro-thermal-optical devices to be used as sensors, emitters, and switches in the IR wavelength range. -
1. Introduction & Theory
1. Introduction & Theory Neha Singh October 2010 Course Overview Day 1: Day 2: Introduction and Theory Genosc Layer Transparent Films Absorbing Films Microstructure – EMA If time permits: – Surface roughness Non-idealities – Grading (Simple and Ultra thin films function-based ITO) Uniqueness test – Thickness non-uniformity UV Absorption Review – Point-by-point fit Actual Samples © 2010, All Rights Reserved 2 Introduction & Theory Light Materials (optical constants) Interaction between light and materials Ellipsometry Measurements Data Analysis © 2010, All Rights Reserved 3 Light Electromagnetic Plane Wave From Maxwell’s equations we can describe a plane wave ⎛ 2π ⎞ E(z,t) = E0 sin⎜ − (z − vt) + ξ ⎟ ⎝ λ ⎠ Amplitude Amplitude arbitraryarbitrary phase phase X Wavelength Wavelength VelocityVelocity λ Electric field E(z,t) Y Z Direction Magnetic field, B(z,t) of propagation © 2010, All Rights Reserved 4 Intensity and Polarization Intensity = “Size” of Electric field. I ∝ E 2 Polarization = “Shape” of Electric field travel. Different Size Y •Y E More Intense Less (Intensity) Intense E Same Shape! X (Polarization) •X © 2010, All Rights Reserved 5 What is Polarization? Describes how Electric Field travels through space and time. X wave1 Y E wave2 Z © 2010, All Rights Reserved 6 Describing Polarized Light Jones Vector Stokes Vector Describe polarized light Describe any light beam with amplitude & phase. as vector of intensity ⎡S ⎤ ⎡ E2 + E2 ⎤ iϕx 0 x0 y0 ⎡Ex ⎤ ⎡E0xe ⎤ ⎢ ⎥ ⎢ 2 2 ⎥ = S1 ⎢ Ex0 −Ey0 ⎥ ⎢ ⎥ ⎢ iϕy ⎥ ⎢ ⎥ = E E e ⎢ ⎥ ⎢ ⎥ ⎣ y ⎦ ⎣⎢ 0y ⎦⎥ S2 2Ex0Ey0 cosΔ ⎢ ⎥ ⎢ ⎥ ⎣S3 ⎦ ⎣⎢2Ex0Ey0 sinΔ⎦⎥ © 2010, All Rights Reserved 7 Light-Material Interaction velocity & c wavelength vary v = in different n materials n = 1 •n = 2 Frequency remains constant v υ = λ © 2010, All Rights Reserved What are Optical Constants n , k Describe how materials and light interact. -
Optical Properties of Teflon AF Amorphous Fluoropolymers
J. Micro/Nanolith. MEMS MOEMS 7͑3͒, 033010 ͑Jul–Sep 2008͒ Optical properties of Teflon® AF amorphous fluoropolymers MinK.Yang Abstract. The optical properties of three grades of Teflon® AF— Roger H. French AF1300, AF1601, and AF2400—were investigated using a J.A. Woollam DuPont Co. Central Research VUV-VASE spectroscopic ellipsometry system. The refractive indices for Experimental Station each grade were obtained from multiple measurements with different film Wilmington, Delaware 19880-0400 thicknesses on Si substrates. The absorbances of Teflon® AF films were E-mail: [email protected] determined by measuring the transmission intensity of Teflon® AF films on CaF2 substrates. In addition to the refractive index and absorbance per cm ͑base 10͒, the extinction coefficient ͑k͒, and absorption coefficient Edward W. Tokarsky ͑␣͒ per cm ͑base e͒, Urbach parameters of absorption edge position and DuPont Fluoropolymer Solutions edge width, and two-pole Sellmeier parameters were determined for the Chestnut Run Plaza three grades of Teflon® AF. We found that the optical properties of the Wilmington, Delaware 19880-0713 three grades of Teflon® AF varied systematically with the AF TFE/PDD composition. The indices of refraction, extinction coefficient ͑k͒, absorp- tion coefficient ͑␣͒, and absorbance ͑A͒ increased, as did the TFE con- tent, while the PDD content decreased. In addition, the Urbach edge position moved to a longer wavelength, and the Urbach edge width became wider. © 2008 Society of Photo-Optical Instrumentation Engineers. ͓DOI: 10.1117/1.2965541͔ Subject terms: fluoropolymer; absorbance absorption coefficient; VUV ellipsometry. Paper 07086R received Oct. 24, 2007; revised manuscript received May 16, 2008; accepted for publication Jun. -
Ellipsometry for Csige Metrology
Ellipsometry for cSiGe Metrology Saiqa Farhat, Srinivasan Rangarajan, Timothy J. Dawei Hu, Ming Dai Mcardle, Michael Steigerwalt Films Metrology Division 300mm East Fishkill KLA Tencor Corp. IBM Corp San Jose, CA Hopewell Jn, NY, USA Abstract— In this paper we report the effectiveness of sensitive to the refractive index and thickness of the films in optical ellipsometry in measuring thickness and Germanium % the stack. Next, the elliptically polarized light will pass through of channel SiGe on SOI substrate used in advanced node high the analyzer and become linear polarized light again. Finally, performance semiconductor devices. the detector will receive the linear polarized light signal. The value tanΨ and cosΔ are extracted as a function of wavelength. Keywords—cSiGe, Ellipsometry, Thickness, Ge These are called the measured spectra. Concentration, metrology. I. INTRODUCTION Optical metrology of film thickness is the “work-horse” technique in semiconductor fabrication for control of a wide variety of processes. The tools and their technology are well established, providing low cost of ownership (COO) to manufacturers by giving fast and reliable feedback to their processes. In this study we demonstrate the successful implementation of optical metrology for cSiGe process control replacing a X-ray diffraction technique. The performance of SiGe channel in devices is dependent on film thickness and %Ge. X-ray diffraction (XRD) technique measures the change Figure 1: SE measurement optics schematic in lattice spacing of the strained silicon which is well correlated with %Ge in the film [1]. The technique is slow and new, posing challenges in manufacturing. Optical metrology on the other hand is a model based technique relying on the ability to B.