Tesla's 1899 Colorado Springs Receiver Construction
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The Stage Is Set
The Stage Is Set: Developments before 1900 Leading to Practical Wireless Communication Darrel T. Emerson National Radio Astronomy Observatory1, 949 N. Cherry Avenue, Tucson, AZ 85721 In 1909, Guglielmo Marconi and Carl Ferdinand Braun were awarded the Nobel Prize in Physics "in recognition of their contributions to the development of wireless telegraphy." In the Nobel Prize Presentation Speech by the President of the Royal Swedish Academy of Sciences [1], tribute was first paid to the earlier theorists and experimentalists. “It was Faraday with his unique penetrating power of mind, who first suspected a close connection between the phenomena of light and electricity, and it was Maxwell who transformed his bold concepts and thoughts into mathematical language, and finally, it was Hertz who through his classical experiments showed that the new ideas as to the nature of electricity and light had a real basis in fact.” These and many other scientists set the stage for the rapid development of wireless communication starting in the last decade of the 19th century. I. INTRODUCTION A key factor in the development of wireless communication, as opposed to pure research into the science of electromagnetic waves and phenomena, was simply the motivation to make it work. More than anyone else, Marconi was to provide that. However, for the possibility of wireless communication to be treated as a serious possibility in the first place and for it to be able to develop, there had to be an adequate theoretical and technological background. Electromagnetic theory, itself based on earlier experiment and theory, had to be sufficiently developed that 1. -
Thyristors.Pdf
THYRISTORS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. Thyristors Thyristors are a class of semiconductor devices characterized by 4-layers of alternating p and n material. Four-layer devices act as either open or closed switches; for this reason, they are most frequently used in control applications. Some thyristors and their symbols are (a) 4-layer diode (b) SCR (c) Diac (d) Triac (e) SCS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The 4-layer diode (or Shockley diode) is a type of thyristor that acts something like an ordinary diode but conducts in the forward direction only after a certain anode to cathode voltage called the forward-breakover voltage is reached. The basic construction of a 4-layer diode and its schematic symbol are shown The 4-layer diode has two leads, labeled the anode (A) and the Anode (A) A cathode (K). p 1 n The symbol reminds you that it acts 2 p like a diode. It does not conduct 3 when it is reverse-biased. n Cathode (K) K Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The concept of 4-layer devices is usually shown as an equivalent circuit of a pnp and an npn transistor. Ideally, these devices would not conduct, but when forward biased, if there is sufficient leakage current in the upper pnp device, it can act as base current to the lower npn device causing it to conduct and bringing both transistors into saturation. -
Robust Wireless Power Transfer Using a Nonlinear Parity–Time-Symmetric Circuit Sid Assawaworrarit1, Xiaofang Yu1 & Shanhui Fan1
LETTER doi:10.1038/nature22404 Robust wireless power transfer using a nonlinear parity–time-symmetric circuit Sid Assawaworrarit1, Xiaofang Yu1 & Shanhui Fan1 Considerable progress in wireless power transfer has been made in PT-symmetric systems are invariant under the joint parity and the realm of non-radiative transfer, which employs magnetic-field time reversal operation14,15. In optical systems, where the symmetry coupling in the near field1–4. A combination of circuit resonance conditions can be met by engineering the gain/loss regions and and impedance transformation is often used to help to achieve their coupling, PT-symmetric systems have exhibited unusual efficient transfer of power over a predetermined distance of about properties16–20. A linear PT-symmetric system supports two phases, the size of the resonators3,4. The development of non-radiative depending on the magnitude of the gain/loss relative to the coupling wireless power transfer has paved the way towards real-world strength. In the unbroken or exact phase, eigenmode frequencies applications such as wireless powering of implantable medical remain real and energy is equally distributed between the gain and devices and wireless charging of stationary electric vehicles1,2,5–8. loss regions; in the broken phase, one of the eigenmodes grows expo- However, it remains a fundamental challenge to create a wireless nentially while the other decays exponentially. Recently, the concept power transfer system in which the transfer efficiency is robust of PT symmetry has been extensively explored in laser structures21–24. against the variation of operating conditions. Here we propose Theoretically, the inclusion of nonlinear gain saturation in the analysis theoretically and demonstrate experimentally that a parity–time- of a PT-symmetric system causes that system to reach a steady state symmetric circuit incorporating a nonlinear gain saturation element in a laser-like fashion that still contains the following PT symmetry provides robust wireless power transfer. -
The Development of the Coherer * and Some Theories of Coherer Action
268 SCIENTIFIC AMERICAN SUPPLEMENT No. 2 182 October 27, 1917 The Development of the Coherer * And Some Theories of Coherer Action By E. C. Green THE electric wave detecting device, first known as a Branly observed that the same effect occurred in the were exhibited. Lodge was the first to give the name Branly tube and later as a coherer, has been the subject case of two slightly oxidized steel or copper wires crossed Coherer to the Branly tube, a follows: "A coherer is of much research. Many experimentalists in past years in light contact, and further observed that this contact a device in which a loose or imperfect conducting contact noticed that a number of metals, when powdered, were resistance dropped from several thousand ohms to a few between pieces of metal is improved in conductivity by the practically non-conductors when a small electromotive ohms when an electric spark was produced many yards impact on it of electric radiation." Lodge's lecture force was impressed on the loosely compressed particles, away. caused widespread interest in Branly's discove"'ies and while they became good conductors when a high electro Branly's work did not secure the notice it deserved pointed out more forcibly that a new and highly sensitive motive force was applied. until 1892 when Dr. Dawson Turner described Branly's means of detecting electric radiation had been evolved. This knowledge can be traced as far back as 1835 to experiments and his own additions to them, at a meeting The coherer used by Lodg consisted of a glass tube Monk of Rosenschceld' who described the permanent of the British Association in Edinburgh." 1 cm. -
Making Radio Waves Telegraph
Making Radio Waves Telegraph Background Information What better way to demonstrate the detection of electromagnetic waves then to produce the electromagnetic waves (Radio waves) that are detected. Radio waves can be made by making a telegraph and a cohere detector can receive those radio waves. This early style telegraph generates a radio wave signal by producing a spark when the circuit is completed. Radio waves are produced by the spark. When there is a spark, electrons are transferred from one electrode to another as the electrons move, energy is transferred into heat, light, and a standing wave at the frequency of a radio wave. This allows the operator to generate radio waves by connecting and disconnecting the circuit respectively. In this design the switch is a piece of metal that is depressed to make contact, and released to open the circuit breaking the connection. (See photograph below) This circuit can be opened and closed easily in a pattern known as Morse code to send information wirelessly. A coherer detector is a historic radio wave detector made of common everyday materials. It consists of a tube containing some metal filings and two electrodes within millimeters of each other. Each electrode is connected to an observable resistor like a light bulb, speakers, or headphones. In the presence of a radio wave the metal filings form a bridge that completes a circuit. When the circuit is closed the radio wave becomes observable, success! The tube needs to be taped so that the metal filings will decoher and the detector is primed to detect another transmission. -
Eimac Care and Feeding of Tubes Part 3
SECTION 3 ELECTRICAL DESIGN CONSIDERATIONS 3.1 CLASS OF OPERATION Most power grid tubes used in AF or RF amplifiers can be operated over a wide range of grid bias voltage (or in the case of grounded grid configuration, cathode bias voltage) as determined by specific performance requirements such as gain, linearity and efficiency. Changes in the bias voltage will vary the conduction angle (that being the portion of the 360° cycle of varying anode voltage during which anode current flows.) A useful system has been developed that identifies several common conditions of bias voltage (and resulting anode current conduction angle). The classifications thus assigned allow one to easily differentiate between the various operating conditions. Class A is generally considered to define a conduction angle of 360°, class B is a conduction angle of 180°, with class C less than 180° conduction angle. Class AB defines operation in the range between 180° and 360° of conduction. This class is further defined by using subscripts 1 and 2. Class AB1 has no grid current flow and class AB2 has some grid current flow during the anode conduction angle. Example Class AB2 operation - denotes an anode current conduction angle of 180° to 360° degrees and that grid current is flowing. The class of operation has nothing to do with whether a tube is grid- driven or cathode-driven. The magnitude of the grid bias voltage establishes the class of operation; the amount of drive voltage applied to the tube determines the actual conduction angle. The anode current conduction angle will determine to a great extent the overall anode efficiency. -
Electrical Conductivity in Granular Media and Branly's Coherer: A
Electrical conductivity in granular media and Branly’s coherer: A simple experiment Eric Falcon, Bernard Castaing To cite this version: Eric Falcon, Bernard Castaing. Electrical conductivity in granular media and Branly’s coherer: A simple experiment. 2004. hal-00002394v1 HAL Id: hal-00002394 https://hal.archives-ouvertes.fr/hal-00002394v1 Preprint submitted on 29 Jul 2004 (v1), last revised 16 Nov 2004 (v2) HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Electrical conductivity in granular media and Branly’s coherer: A simple experiment Eric Falcon1, ∗ and Bernard Castaing1 1Laboratoire de Physique, Ecole´ Normale Sup´erieure de Lyon, UMR 5672, 46, all´ee d’Italie, 69 007 Lyon, France (Dated: July 29, 2004) We show how a simple laboratory experiment can be used to exhibit certain electrical transport properties of metallic granular media. At a low critical imposed voltage, a transition from an insulating to a conductive state is observed. This transition comes from an electro-thermal coupling in the vicinity of the microcontacts between grains where microwelding occurs. The apparatus used allows us to obtain an implicit determination of the microcontact temperature, which is analogous to a resistive thermometer. -
Shults Robert D 196308 Ms 10
AN INVESTIGATION OF THE INFLUENCE OF CIRCUIT PARAMETERS ON THE OUTPUT WAVESHAPE OF A TUNNEL DIODE OSCILLATOR A THESIS Presented to The Faculty of the Graduate Division by Robert David Shults In Partial Fulfillment of the Requirements for the Degree Master of Science in Electrical Engineering Georgia Institute of Technology June, I963 AN INVESTIGATION OF THE INFLUENCE OF CIRCUIT PARAMETERS ON THE OUTPUT WAVESHAPE OF A TUNNEL DIODE OSCILLATOR Approved: —VY -w/T //'- Dr. W. B.l/Jonesj UJr. (Chairman) _A a t~l — Dry 3* L. Hammond, Jr. V ^^ __—^ '-" ^^ *• Br> J. T. Wang * Date Approved by Chairman: //l&U (A* l/j^Z) In presenting the dissertation as a partial, fulfillment of the requirements for an advanced degree from the Georgia Institute of Technology, I agree that the Library of the Institution shall make it available for inspection and circulation in accordance witn its regulations governing materials of this type. I agree -chat permission to copy from, or to publish from, this dissertation may be granted by the professor under whose direction it was written^ or, in his absence, by the dean of the Graduate Division when luch copying or publication is solely for scholarly purposes ftad does not involve potential financial gain. It is under stood that any copying from, or publication of, this disser tation which involves potential financial gain will not be allowed without written permission. _/2^ d- ii ACKNOWLEDGMEBTTS The author wishes to thank his thesis advisor, Dr. W. B„ Jones, Jr., for his suggestion of the problem and for his continued guidance and encouragement during the course of the investigation. -
Effect of Load Impedance on the Performance of Microwave Negative Resistance Oscillators
Effect of Load Impedance on the Firas M. Ali , Suhad H. Jasim Issue No. 39/2016 Performance of Microwave… Effect of Load Impedance on the Performance of Microwave Negative Resistance Oscillators Firas Mohammed Ali Al-Raie [email protected] University of Technology - Department of Electrical Engineering - Baghdad - Iraq Suhad Hussein Jasim [email protected] University of Technology - Department of Electrical Engineering - Baghdad - Iraq Abstract: In microwave negative resistance oscillators, the RF transistor presents impedance with a negative real part at either of its input or output ports. According to the conventional theory of microwave negative resistance oscillators, in order to sustain oscillation and optimize the output power of the circuit, the magnitude of the negative real part of the input/output impedance should be maximized. This paper discusses the effect of the circuit’s load impedance on the input negative resistance and other oscillator performance characteristics in common base microwave oscillators. New closed-form relations for the optimum load impedance that maximizes the magnitude of the input negative resistance have been derived analytically in terms of the Z- parameters of the RF transistor. Furthermore, nonlinear CAD simulation is carried out to show the deviation of the large-signal Journal of Al Rafidain University College 427 ISSN (1681-6870) Effect of Load Impedance on the Firas M. Ali , Suhad H. Jasim Issue No. 39/2016 Performance of Microwave… optimum load impedance from its small-signal value. It has been shown also that the optimum load impedance for maximum negative input resistance differs considerably from its value required for maximum output power under large-signal conditions. -
The Bipolar Junction Transistor (BJT)
The Bipolar Junction Transistor (BJT) Introduction he transistor, derived from transfer resistor, is a three terminal device whose resistance between two terminals is controlled by the third. The term bipolar reflects the fact that T there are two types of carriers, holes and electrons which form the currents in the transistor. If only one carrier is employed (electron or hole), it is considered a unipolar device like field effect transistor (FET). The transistor is constructed with three doped semiconductor regions separated by two pn junctions. The three regions are called Emitter (E), Base (B), and Collector (C). Physical representations of the two types of BJTs are shown in Figure (1–1). One type consists of two n -regions separated by a p-region (npn), and the other type consists of two p-regions separated by an n- region (pnp). Figure (1-1) Transistor Basic Structure The outer layers have widths much greater than the sandwiched p– or n–type layer. The doping of the sandwiched layer is also considerably less than that of the outer layers (typically, 10:1 or less). This lower doping level decreases the conductivity of the base (increases the resistance) due to the limited number of “free” carriers. Figure (1-2) shows the schematic symbols for the npn and pnp transistors 1 College of Electronics Engineering - Communication Engineering Dept. Figure (1-2) standard transistor symbol Transistor operation Objective: understanding the basic operation of the transistor and its naming In order for the transistor to operate properly as an amplifier, the two pn junctions must be correctly biased with external voltages. -
A High-Resolution Reflective Microwave Planar Sensor for Sensing of Vanadium Electrolyte
sensors Article A High-Resolution Reflective Microwave Planar Sensor for Sensing of Vanadium Electrolyte Nazli Kazemi 1 , Kalvin Schofield 1 and Petr Musilek 1,2,∗ 1 Electrical and Computer Engineering, University of Alberta, Edmonton, AB T6G 1H9, Canada; [email protected] (N.K.); kschofi[email protected] (K.S.) 2 Applied Cybernetics, University of Hradec Králové, 500 03 Hradec Králové, Czech Republic * Correspondence: [email protected] Abstract: Microwave planar sensors employ conventional passive complementary split ring res- onators (CSRR) as their sensitive region. In this work, a novel planar reflective sensor is introduced that deploys CSRRs as the front-end sensing element at fres = 6 GHz with an extra loss-compensating negative resistance that restores the dissipated power in the sensor that is used in dielectric material characterization. It is shown that the S11 notch of −15 dB can be improved down to −40 dB with- out loss of sensitivity. An application of this design is shown in discriminating different states of vanadium redox solutions with highly lossy conditions of fully charged V5+ and fully discharged V4+ electrolytes. Keywords: microwave sensor; negative resistance; vanadium redox flow batteries; reflective sensor 1. Introduction Citation: Kazemi, N.; Shcofield, K.; During the past decade, microwave planar resonators have been found to be highly Musilek, P. A High-Resolution suitable for sensing applications, mainly due to their compact size, high sensitivity, low Reflective Microwave Planar Sensor manufacturing cost, and high design flexibility [1–10]. Split ring resonators (SRR), along for Sensing of Vanadium Electrolyte. with their complementary version (CSRR), are the main building blocks of these sensors [11]. -
Tunnel-Diode Microwave Amplifiers
Tunnel diodes provide a means of low-noise microwave amplification, with the amplifiers using the negative resistance of the tunnel diode to a.chieve amplification by reflection. Th e tunnel diode and its assumed equivalent circuit are discussed. The concept of negative-resistance reflection amplifiers is discussed from the standpoints of stability, gain, and noise performance. Two amplifi,er configurations are shown. of which the circulator-coupled type 1'S carried further into a design fo/' a C-band amplifier. The result 1'S an amph'fier at 6000 mc/s with a 5.S-db noise figure over 380 mc/s. An X-band amplifier is also reported. C. T. Munsterman Tunnel-Diode Microwave Am.plifiers ecent advances in tunnel-diode fabrication where the gain of the ith stage is denoted by G i techniques have made the tunnel diode a and its noise figure by F i. This equation shows that Rpractical, low-noise, microwave amplifier. Small stages without gain (G < 1) contribute greatly to size, low power requirements, and reliability make the overall system noise figure, especially if they these devices attractive for missile application, es are not preceded by some source of gain. If a pecially since receiver sensitivity is significantly low-noise-amplification device can be located near improved, with resulting increased homing time. the source of the signal, the contribution from the Work undertaken at APL over the past year has successive stages can be minimized by making G] resulted in the unique design techniques and hard sufficiently large, and the overall noise figure is ware discussed in this paper.-Y.· then that of the amplifier Fl.