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Arsenic Trisulfide Inorganic Photoresist for Three-Dimensional Photolithography

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Arsenic Trisulfide Inorganic Photoresist for Three-Dimensional Photolithography Arsenic Trisulfide Inorganic Photoresist for Three-Dimensional Photolithography Zur Erlangung des akademischen Grades eines DOKTORS DER NATURWISSENSCHAFTEN (Dr. rer. nat.) der Fakultät für Chemie und Biowissenschaften der Universität Karlsruhe (TH) vorgelegte DISSERTATION von M.Sc. Sean Hang Edmond Wong aus Hong Kong, China Dekan: Prof. Dr. S. Bräse Referent: Prof. Dr. D. Fenske Korreferent: Prof. Dr. K. Busch Tag der mündlichen Prüfung: July 09, 2008 1 Table of Contents Zusammenfassung 4 Introduction 7 1. Design and Implementation of 3D Photonic Crystals……………………………....... 11 1.1 Theoretical Concepts of Photonic Crystals…………………………………..... 11 1.2 Current Methods for Fabricating Three-dimensional Photonic Crystals…........ 16 1.3 Arsenic Trisulfide (As2S3) as a Photoresist for 3D DLW……………............... 20 2. Thin Film Fabrication……………………………………………………………......... 26 2.1 Introduction.………………………………………………………………….... 26 2.2 Thin Film Fabrication Concepts………………………………………………. 26 2.3 Experimental Results and Discussion…………………………………………. 32 2.3.1 High Temperature Thermal Evaporation................................................ 32 2.3.2 TGA-MS and Thermal MS Analysis of Gas-Phase Species……....... 33 2.4 Materials Characterization…………………………………………………….. 44 2.4.1 Chemical Properties..………………..................................................... 44 2.4.2 Optical Properties………………………………………........................ 51 2.5 Photo-polymerization Process………………………………………………… . 54 3. Three-Dimensional Direct Laser Writing....................................................................... 60 3.1 The 3D DLW Concept…………………………………………………………. 60 3.1.1 3D DLW Setup……………………………................…….................. 63 3.2 Experimental Results and Discussion………………………………………….. 63 3.2.1 Effects of Optical Aberrations on Structure Quality………….............. 68 3.2.2 Corrective Measures for the Optical Aberrations…………………...... 70 3.2.3 Woodpile PCs Produced Using Corrective Measures………………... 73 4. Development of a Highly-Selective Etchant………………………………………….. 79 4.1 Introduction…………………………………………………………………..... 79 4.2 Experimental Results and Discussions………………………………………... 84 4.2.1 Systematic Molecular Modification of the Dibenzylamine Backbone.. 84 4.2.2 Testing of the Small Molecule Library…………………….................. 87 4.2.3 XPS Characterization of the Photoresist Surfaces…………................. 94 4.2.4 1H-NMR analysis into the Etching Mechanism………………............. 97 5. Erbium Doped As2S3………………………………………………………………......113 5.1 Introduction…………………………………………………………………..... .113 5.1.1 Rare-Earth Elements…………………………….................................. .114 5.1.2 Er Doped As2S3…………………………………….............................. .121 5.2 Experimental Results and Discussion................................................................. .124 5.2.1 Gas-Phase Direct Doping (GPDD) Technique...................................... .124 5.2.2 Materials Characterization..................................................................... .126 5.2.3 Optical Characterization........................................................................ .131 5.3 Photoresist Behavior of Erbium Doped As2S3 Films.......................................... .138 5.4 Maximum Doping Limit..................................................................................... .146 5.5 Non-Photo-resistive Applications of Erbium doped As2S3 Films....................... .159 6. Summary and Outlook.................................................................................................... .165 7. Materials and Methods.................................................................................................... .171 7.1 Photonic Band-Structure Calculations................................................................ .171 7.2 Etching and Characterization Procedure............................................................. .171 2 7.3 1H-NMR Spectroscopy....................................................................................... .172 7.4 Optical Spectroscopy of 3D Structures............................................................... .173 7.5 Photoluminescence / Photoluminescence Excitation Spectroscopy....................174 7.6 Powdered X-ray Diffraction............................................................................... .175 7.7 Raman Spectroscopy........................................................................................... .176 7.8 Rutherford Backscattering Spectroscopy............................................................ .176 7.9 Scanning Electron Microscopy and Energy Dispersive X-ray Analysis............ .177 7.10 Shaded-Ring Filter Fabrication......................................................................... .178 7.11 Single Crystal X-ray Diffraction....................................................................... .178 7.12 Synthesis and Purification of Dibenzylamine Derivatives............................... .179 7.13 Synthesis of As4S4............................................................................................. .181 7.14 Thermal Evaporation........................................................................................ .181 7.15 Thermal Gravimetric Analysis / Mass Spectroscopy and Mass Spectroscopy..182 7.16 Thin Film Ellipsometery................................................................................... .183 7.17 Three-Dimensional Direct Laser Writing......................................................... .184 7.18 Ultra-Violet / Visible and Near Infrared Spectroscopy.................................... .185 7.19 Extended X-ray Absorption Fine Spectroscopy............................................... .185 7.20 X-ray Photoemission Spectroscopy.................................................................. .187 Appendix............................................................................................................................... .188 A. Key Material and Optical Data............................................................................ .188 B. Single Crystal X-ray Diffraction Data................................................................. .189 B.1 N-4-methoxybenzyl-pyren-1-ylamine...................................................... .189 B.2 N-4-methoxybenzyl-pyren-1-ylammonium chloride............................... .194 C. Powder X-ray Diffraction Data............................................................................ .201 C.1 As4S4......................................................................................................... .201 C.2 Er2S3......................................................................................................... .202 C.3 Er2O3......................................................................................................... .203 D. 1H-NMR and MALDI-TOF Data of All Synthesized Amines……………….... .204 E. Tabulated Data of the Etch Rates and Etch Selectivity of the Amine Molecules .206 F. Far Infra-Red Spectrum of As2S3 and Er:As2S3.................................................... .207 G. Rutherford Backscattering Data for As2S3........................................................... .208 Acknowledgements...............................................................................................................209 Curriculum Vitae................................................................................................................. .211 References............................................................................................................................. .214 3 Zusammenfassung Bis heute sind die anspruchvollsten Architekturen für dreidimensionale photonische Strukturen photonische Kristalle. Diese bieten unübertroffene Möglichkeiten, Licht auf der Skala seiner Wellenlänge zu führen und zu manipulieren. Insbesondere die Kombination einer vollständigen photonischen Bandlücke mit optisch aktivem Material hat zur Entwicklung von theoretischen Blaupausen geführt, die z.B. schwellenlose Laser und ultra-schnelle, rein optische Schalter realisieren sollen. Gerade letztere basieren auf einer Heterostruktur aus photonischen Kristallen, in der ein zweidimensionaler photonischer Kristall von zwei dreidimensionalen photonischen Kristallen in einer Art Sandwich eingeschlossen wird und auf diese Weise eine vollständige photonische Bandlücke zur Verfügung stellt, die Verluste aus der Ebene des zweidimensionalen photonischen Kristalls vermeiden soll. Eine Herausforderung dabei ist die Maßgabe, dass nur in der zweidimensionalen Schicht optisch aktives (z.B. Quantenpunkte) oder nichtlineares Material verwendet werden soll. Momentan gibt es nur zwei experimentelle Zugänge, eine derartige Geometrie zu realisieren, nämliche die direkte Halbleiterfabrikation oder das direkte Laserschreiben (DLW, direct laser writing). Die direkte Halbleiterfabrikation realisiert dreidimensionale Strukturen durch Wafer-Fusion von entsprechend strukturierten zweidimensionalen Wafern. Der hohe Brechzahlkontrast, der für eine vollständige photonische Bandlücke benötigt wird, kann auf diese Weise relative einfach realisiert werden und auch das gezielte Einbringen optisch aktiven Materials in nur einer einzigen Lage wurde bereits experimentell demonstriert. Trotz dieser offensichtlichen Vorteile bedarf diese Technk einer hochqualitativen Halbleiter- Mikrofabrikationsanlage und technologisch extrem anspruchvoller 4 Positioniertechniken, um die relative Lage der einzelnen Schichten vor und während der Wafer-Fusion beizubehalten.
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