Tabulation of Published Data on Electron Devices of the U.S.S.R
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n NBS TECHNICAL NOTE 835 * Vau of U.S. DEPARTMENT OF COMMERCE/ National Bureau of Standards ublished Data on Electron Devices of the U.S.S.R. Through December 1973 I00 1^74 NATIONAL BUREAU OF STANDARDS 1 The National Bureau of Standards was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (Da basis for the Nation's physical measurement system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology, the Institute for Computer Sciences and Technology, and the Office for Information Programs. 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Bureau of Standards DEC 1974 00 Tabulation of Published Data on 753 Electron Devices of the U.S.S.R. Through December 1973 t Charles P. Marsden Electronic Technology Division Institute for Applied Technology lAo, National Bureau of Standards '" Washington. D.C. 20231 t,- TeaUAiacJ r\o±e »& ^SS' (Supercede;' Teclmic;il Note 715) °F <*** «<* $ \ <:,- 00 % . - / U.S. DEPARTMENT OF COMMERCE, Frederick B. Dent, Secretary NATIONAL BUREAU OF STANDARDS, Richard W. Roberts, Director Issued November 1974 Library of Congress Catalog Card Number: 74-600094 National Bureau of Standards Technical Note 835 Nat. Bur. Stand. (U.S.), Tech. Note 835, 133 pages (Nov. 1974) CODEN: NBTNAE U.S. GOVERNMENT PRINTING OFFICE WASHINGTON: 1974 For sale by the Superintendent of Documents, U.S. Government Printing Office, Washington, D.C. 20402 (Order by SD Catalog No. C13.46:835). Price $1 .95 Preface Comments on Tabulations of Electron Devices of the U.S.S.R. This revision is actually the eighth revision in the series of Tabulations of Electron Devices of the U.S.S.R. published over the past 11 years. These publications document the growth of the U.S.S.R. electron device industry in that a concerted attempt has been made to include all published data on their devices, but we have no knowledge of the time lag between pilot or serial production and data publication. The growth of published device data is detailed in table 1 which shows the increase in the number of device types in the various groups. Generally this increase, in the receiving tube area, has been in sub-miniature tvpes and more germanium transistor devices are still being produced than silicon devices. Germanium transistor devices have always outnumbered silicon devices by a large factor as is evidenced in the bottom listing of table 1. There is no I .S.S.R. equivalent of the complete data sheet, with characteristic curves, as published by the European. Japanese, and U. S. device manufacturers; and while Soviet national (GOST) device specifications are quite complete, they appear to be delayed in publication. Furthermore, the published data is not consistent in different publications. For this reason, considerable effort has been expended intercomparing Soviet data in the available publications and selecting the most probably correct data values for this tabulation. The sources for this publication are books published by the institutes, export brochures, and data contained in magazines and journals. Diodes and Transistors New prefix letters for transistors were introduced about 5 years ago. The letters "G" and "K" designate germanium and silicon, respectively. These are followed by the letters "D" or "T" for diodes ? or transistors. This type of letter prefix has replaced the "1T and "2T" designations initiated more than 5 years ago, although a few have been retained in this tabulation as no equivalent "G" or "K" types have replaced them. The prefix letter "M" was used for the first time about 5 years ago and is now quite common preceding the "P number" to indicate that the transistor enclosure is a cold weld between the copper cap and the alloy header. Integrated Circuits Group X—A on integrated circuits has been increased by adding a number of new types and up- dating a few. It will be noted that the "Series Number" has been deleted from the Group Headings to provide more space for the device type number. However, the series number consists of the first three digits of the type number, e.g., Type 1LR313 is in Series 131. All type numbers in which the first digit is a "1" are integrated circuits on a monolithic silicon chip. Similarly, all type numbers in wr hich the first digit is a "2" are hybrid circuits usually mounted on a ceramic substrate. Both of these groups contain digital and linear circuit series. The letter "K" prefixed to the device type number has been introduced to indicate that the inte- grated circuit can be used only in a restricted temperature range (i.e., — 10 to + 70 °C). The Series number groups a number of device types into a common family of circuits, but not exclusively according to circuit complication and end-use. -" Several devices are marked "Duplicate of - - - in the data tables because there was no differen- tiation in the data given. ill A New Groups Note that a new group, X—B (Metal-Oxide-Silicon transistors, or MOS transistors), has been included and that two-terminal n-p-n-p devices are separated from three terminal n-p-n-p devices in new group X1I-B, Silicon Controlled Rectifiers. Several new groups have been added in this revision. Among the vacuum tube groups, Group IV— on Mechanotrons, two anode diodes, shows seven new devices which operate on the old principle that an external mechanical motion imposed on the device changes the position of the cathode with respect to the two anodes causing changes in the plate currents. As the number