electronics Article Efficient and Versatile Modeling of Mono- and Multi-Layer MoS2 Field Effect Transistor Nicola Pelagalli 1,* , Emiliano Laudadio 2 , Pierluigi Stipa 2 , Davide Mencarelli 1 and Luca Pierantoni 1 1 Departement of Information Engineering, Marche Polytechnic University, 60131 Ancona, Italy;
[email protected] (D.M.);
[email protected] (L.P.) 2 Department of Materials, Environmental Sciences and Urban Planning, Marche Polytechnic University, 60131 Ancona, Italy;
[email protected] (E.L.);
[email protected] (P.S.) * Correspondence:
[email protected] Received: 1 August 2020; Accepted: 24 August 2020; Published: 27 August 2020 Abstract: Two-dimensional (2D) materials with intrinsic atomic-level thicknesses are strong candidates for the development of deeply scaled field-effect transistors (FETs) and novel device architectures. In particular, transition-metal dichalcogenides (TMDCs), of which molybdenum disulfide (MoS2) is the most widely studied, are especially attractive because of their non-zero bandgap, mechanical flexibility, and optical transparency. In this contribution, we present an efficient full-wave model of MoS2-FETs that is based on (1) defining the constitutive relations of the MoS2 active channel, and (2) simulating the 3D geometry. The former is achieved by using atomistic simulations of the material crystal structure, the latter is obtained by using the solver COMSOL Multiphysics. We show examples of FET simulations and compare, when possible, the theoretical results to the experimental from the literature. The comparison highlights a very good agreement. Keywords: field-effect transistor; molybdenum disulfide; 2D materials; ferroelectric; hafnium zirconium oxide; atomistic simulations 1. Introduction Mono-layer transition metal dicalchogenides are chemical compounds in which molecules are formed by one transition metal atom (Mo, W, Pt, etc.) and two atoms belonging to group 16 of the periodic table of elements (S, O, Pt).