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New Generations of Boron-Doped Diamond Structures by Delta-Doping Technique for Power Electronics : CVD Growth and Characterization Alexandre Fiori

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New Generations of Boron-Doped Diamond Structures by Delta-Doping Technique for Power Electronics : CVD Growth and Characterization Alexandre Fiori New generations of boron-doped diamond structures by delta-doping technique for power electronics : CVD growth and characterization Alexandre Fiori To cite this version: Alexandre Fiori. New generations of boron-doped diamond structures by delta-doping technique for power electronics : CVD growth and characterization. Electronics. Université de Grenoble, 2012. English. NNT : 2012GRENI018. tel-00967208v2 HAL Id: tel-00967208 https://tel.archives-ouvertes.fr/tel-00967208v2 Submitted on 28 Jun 2017 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. THÈSE Pour obtenir le grade de DOCTEUR DE L’UNIVERSITÉ DE GRENOBLE Spécialité : Matériaux, Mécanique, Génie civil, Electrochimie Arrêté ministériel : 7 août 2006 Présentée par Alexandre FIORI Thèse dirigée par Franck Omnès et codirigée par Julien Pernot préparée au sein de l’institut Néel au CNRS à Grenoble dans l'École Doctorale I-MEP2 : Ingénierie – Matériaux, mécanique, Environnement, Energétique, Procédés, Production Nouvelles générations de structures en diamant dopé au bore par technique de delta-dopage pour l’électronique de puissance : croissance par CVD et caractérisation Thèse soutenue publiquement le 24 octobre 2012, devant le jury composé de : M. Christophe VALLEE Professeur, Université de Grenoble, Président M. Ken HAENEN Professeur, Université de Hasselt, Rapporteur M. Jocelyn ACHARD Professeur, Université Paris XIII, Rapporteur M. Gilles PRUDON Maître de Conférences, INSA Lyon, Examinateur M. Jean-Charles ARNAULT Directeur de recherche, CEA Saclay, Examinateur M. Etienne BUSTARRET Directeur de recherche, CNRS Institut Néel, Examinateur M. Franck OMNES Chargé de recherche (HDR), CNRS - Institut Néel, Directeur de thèse M. Tokuyuki TERAJI Senior researcher, NIMS, Japon, Invité ACKNOWLEDGMENTS I want to express my sincere thanks to all the people who helped during the work on my PhD project. These in particular: Franck Omnès, who accepted the direction of this PhD project at the CNRS Grenoble. His expertise on the plasma-enhanced chemical vapor deposition was indispensable for the success of this thesis. He gave me the possibility to work on this interesting and nice topic. Julien Pernot, who guided me during this PhD project and accepted the co-direction of this thesis. His expertise on semiconductor physics and electronic power devices was important too. Etienne Bustarret, the project manager, who was always present to guide, help and encourage me throughout this work. Tokuyuki Teraji, my main supervisor during my six months internship at NIMS, Tsukuba in Japan, who gave me the opportunity to experiment lateral and isotopic carbon source diamond growth, which were fundamental for the accomplishment of this work. He always took time to discuss with me about diamond growth and life in Japan. With Satoshi Koizumi, they strongly contributed to my knowledge of diamond growth mechanisms, associate defects and doping. Yasuo Koide, who gave me the possibility to work in the Wide Bandgap Materials Group, at NIMS and also Yiuri Garrino for his experimental help and his sympathy. Ken Haenen and Jocelyn Achard, who kindly accepted to render their expert opinion for this PhD thesis, and Christophe Vallée, Gilles Prudon and Jean-Charles Arnault who also accepted to took part of the examining jury. All the members of my group at the Institut Néel – CNRS Grenoble. Etienne Gheeraert (group leader), David Eon (plasma), Pierre Muret (DLTS) for their true interest in my daily work, and for their very efficient help. Yasuo Koide, who gave me the possibility to work in the Wide Bandgap Materials Group, at NIMS and also all members: Masataka Imura, Yoshihiro Irokawa, Meiyong Liao, Masatomo Sumiya. It was a great pleasure to join the group again. All my precious collaborators to this study: Francois Jomard (GEMaC, France) for SIMS, Maria de la Paz Alegre Salguero, José Carlos Piñero Charlo and Daniel Araújo (Cádiz, Spain) for TEM, Edith Bellet-Amalric (INAC, Grenoble) and Eric Mossang (Inst. Néel, Grenoble) for XRD. 5 And friendlier, I want to thanks some nice people who helped me and encourage me in the PhD work. These in particular: Japanese researchers: Hisao Kanda, Takashi Taniguchi, group leaders of Ultra-High Pressure Processes Group at NIMS, Kenji Watanabe, principal researcher at the Optoelectronic Materials Group at NIMS, and Hiromitsu Kato, researcher at the Diamond Research Center at AIST. I gained a lot of experience from my time with them. Plus librement, je remercie : Les étudiants doctorant de passage dans l’équipe : Pierre-Nicolas VOLPE, Sébastien RUFFINATTO, Clément HEBERT, Stéphane BROCHEN, Hasan-al MEHEDI, Gauthier CHICOT, Aboulaye TRAORE, Jessica BOUSQUET, Pierre TCHOULFIAN, Aurélien MARECHAL, Rafael FILLON, ainsi que les stagiaires : Jean-Baptiste FAY et Ilias JALAL. Le personnel technique et administratif de l’institut Néel, des personnes remarquables, que l’on ne retrouve nulle part ailleurs : Philippe DAVID Julien JARREAU Eric MOSSANG Pierre GIROUX Denis MAILLARD Christophe BOUCHARD David BARRAL Fabrice BRUNOUD Stephanie KODJIKIAN Richard HAETTEL Isabelle CROS-JOUVIN Sébastien PAIRIS Graziella KAVAKLIAN Nicolas SCARLATA Emmanuel VERLOOP Valérie GUISSET Véronique FAUVEL Frédéric GAY Valérie REITA Sabine GADAL Jacques MARCUS Fabrice DONATINI Mireille DUBOIS Philippe PLAINDOUX Thierry FOURNIER Laurence GRITTI Edouard WAGNER Bruno FERNANDEZ Caroline BARTOLI Sylvain DUMONT Sébastien DUFRESNES Louise INFUSO Daniel LEPOITTEVIN Didier DUFEU Marielle LARDATO Bernard MAIRE-AMIOT Laurent DEL-REY Mathilde MAURO Patrick BELMAIN Yves DESCHANELS Carmela MELI Laurent JOUBERT Eric EYRAUD Christine ZAMPAOLO Julien MICHEL Je remercie ma famille, pour l’aide logistique, culinaire et financier du pot de thèse. 6 CONTENTS ACKNOWLEDGMENTS ............................................................................................................ 5 CONTENTS ............................................................................................................................. 7 GENERAL INTRODUCTION .................................................................................................... 11 INTRODUCTION GÉNÉRALE ................................................................................................... 13 CHAPTER 1. INTRODUCTION TO BORON-DELTA-DOPING OF DIAMOND ................................................ 15 I. DIAMOND DEVICES FOR POWER ELECTRONICS AND HIGH FREQUENCY APPLICATION ...................................... 18 I.1. Physical properties of diamond ...................................................................................................... 18 I.2. Challenges in power electronics ..................................................................................................... 20 I.3. Devices ............................................................................................................................................ 22 II. PROBLEMS RELATED TO DOPING ......................................................................................................... 23 II.1. n-type doping ................................................................................................................................. 24 II.2. p-type doping – Boron doping ....................................................................................................... 26 III. DELTA DOPING IN SEMICONDUCTORS ................................................................................................. 28 III.1. History of diamond boron delta-doping ....................................................................................... 29 III.2. Theory of delta-doping ................................................................................................................. 29 III.3. Basic theory of electronic delta-doped structure ......................................................................... 30 III.4. Simulation of diamond boron delta-doping.................................................................................. 31 IV. CHALLENGES & STRATEGIES ............................................................................................................. 36 IV.1. From heavy to light boron doping and vice versa ........................................................................ 36 IV.2. Thickness ...................................................................................................................................... 36 IV.3. Interface ....................................................................................................................................... 37 V. SUMMARY ..................................................................................................................................... 37 VI. RÉSUMÉ DU CHAPITRE 1 .................................................................................................................. 39 CHAPTER 2. ENGINEERING OF THE MPCVD DIAMOND GROWTH TECHNIQUE ....................................... 45 I. PRESENTATION OF ENGINEERING PROJECTS ..........................................................................................
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