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Gain Cell Embedded DRAM for Ultra-Low Power Applications at Scaled CMOS Nodes

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Gain Cell Embedded DRAM for Ultra-Low Power Applications at Scaled CMOS Nodes Gain Cell Embedded DRAM for Ultra-Low Power Applications at scaled CMOS Nodes Robert Giterman EnICS Labs Nanoelectronics Program Faculty of Engineering, Bar-Ilan University, Israel May May 6 ,6 2015, 2015 1 Increasing Need for Embedded Memories in VLSI SoCs • Memories often consume >50% of area & power • 1st point of failure under voltage scaling • Limit yield Intel AMD Opteron 6300 Intel Xeon May 6, 2015 2 Evolution of Total Cache Size Over Time 50x increase in 10MB 25 years [ITRS’11] 5X in 4 years 2MB source: www.anandtech.com May 6, 2015 3 The 6T SRAM Bit Cell • Several standby leakage paths. • Dense, symmetric layout, but still six transistors. • Supply voltage limited due to ratioed operation. • Single-ported. May 6, 2015 4 Advantages and Drawbacks of Gain Cells In light of technology and voltage scaling, gain-cells have several advantages over conventional 6T SRAM and 1T-1C eDRAM: SRAM • Smaller cell size than SRAM, less bitcell leakage Gain-cells • Compared to 1T-1C eDRAM: – Logic-compatible, i.e., no special processing Chun, VLSI’09 steps, and no extra cost. – Non-destructive read operation. • Naturally two-port. • Optimize for read-ability AND write-ability. Drawbacks: • Dynamic. Energy-costly refresh cycles?! Trench cap Stacked caps • May have lower retention (refresh + leakage) power Kang, McGraw-Hill’03 than SRAM (leakage only) May 6, 2015 5 Gain Cells : Basic Topologies • Dynamic memory cell, built from MOS transistors (& MOS caps), write port (WWL & WBL), storage cap, and read port (RWL & RBL). 3T Gain Cell 2T Gain Cell RWL WWL L B WWL R MR MW MW MR L MS L L B B B R RWL W W Chun, et al. JSSC 2011 Somasekhar, et al. JSSC 2009 May 6, 2015 6 Main Leakage Components • Conventional 2T gain cell implementations in sub- 100nm technologies display very low retention times, due to substantially higher leakage currents. • Depending on the type of Level ‘1’ is stored write transistor (WT), one of the data levels has a much higher retention time than the other (‘1’ for a PMOS WT, ‘0’ for a NMOS WT). Level ‘0’ is stored May 6, 2015 8 Main Leakage Components • Conventional 2T gain cell implementations in sub- 100nm technologies display very low retention times, due to substantially higher leakage currents. • Depending on the type of write transistor (WT), one of the data levels has a much higher retention time than the other (‘1’ for a PMOS WT, ‘0’ for a NMOS WT). May 6, 2015 9 4T Gain Cell • The ‘weaker’ data level is strengthened by the addition of a buffer node (BN) and a feedback device to the basic configuration, which conditionally discharges node BN according to the stored data level. • The data retention time (DRT) estimation is higher by an order of magnitude than that of a conventional 2T gain cell. May 6, 2015 10 4T Gain Cell • The ‘weaker’ data level is strengthened by the addition of a buffer node (BN) and a feedback device to the basic configuration, which conditionally discharges node BN according to the stored data level. • The data retention time (DRT) estimation is higher by an order of magnitude than that of a conventional 2T gain cell. • The proposed gain cell layout is only 60% of a redrawn 6T SRAM cell in the same 65nm node. May 6, 2015 11 Comparison With other Embedded Memory Options May 6, 2015 12 Questions and Open Discussion May 6, 2015 13.
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