Nomination Background: Nitrogen Trifluoride (CASRN: 7783-54-2)
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Nitrogen Trifluoride Hazard Summary Identification
Common Name: NITROGEN TRIFLUORIDE CAS Number: 7783-54-2 RTK Substance number: 1380 DOT Number: UN 2451 Date: March 2001 ------------------------------------------------------------------------- ------------------------------------------------------------------------- HAZARD SUMMARY * Nitrogen Trifluoride can affect you when breathed in. * Exposure to hazardous substances should be routinely * Contact may irritate the skin and eyes. evaluated. This may include collecting personal and area * High levels can interfere with the ability of the blood to air samples. You can obtain copies of sampling results carry Oxygen causing headache, fatigue, dizziness, and a from your employer. You have a legal right to this blue color to the skin and lips (methemoglobinemia). information under OSHA 1910.1020. Higher levels can cause trouble breathing, collapse and * If you think you are experiencing any work-related health even death. problems, see a doctor trained to recognize occupational * Repeated high exposure can cause weakness, muscle diseases. Take this Fact Sheet with you. twitching, seizures and convulsions. * Nitrogen Trifluoride may damage the liver and kidneys. WORKPLACE EXPOSURE LIMITS * Repeated high exposure can cause deposits of Fluorides in OSHA: The legal airborne permissible exposure limit the bones and teeth, a condition called "Fluorosis." This (PEL) is 10 ppm averaged over an 8-hour can cause pain, disability and mottling of the teeth. workshift. * The above health effects do NOT occur at the level of Fluoride used in water for preventing cavities in teeth. NIOSH: The recommended airborne exposure limit is 10 ppm averaged over a 10-hour workshift. IDENTIFICATION Nitrogen Trifluoride is a colorless gas with a moldy odor. It ACGIH: The recommended airborne exposure limit is is used as a Fluorine source in the electronics industry and in 10 ppm averaged over an 8-hour workshift. -
NF3, the Greenhouse Gas Missing from Kyoto Michael J
GEOPHYSICAL RESEARCH LETTERS, VOL. 35, L12810, doi:10.1029/2008GL034542, 2008 NF3, the greenhouse gas missing from Kyoto Michael J. Prather1 and Juno Hsu1 Received 5 May 2008; accepted 27 May 2008; published 26 June 2008. [1] Nitrogen trifluoride (NF3) can be called the missing chemical industry are following: Kanto Denka produces greenhouse gas: It is a synthetic chemical produced in 1,000 tons per yr; DuPont is setting up a manufacturing industrial quantities; it is not included in the Kyoto basket of facility in China; Formosa Plastics and Mitsui Chemicals greenhouse gases or in national reporting under the United are expanding production. Data on total production is not Nations Framework Convention on Climate Change freely available, but based on press releases and industry (UNFCCC); and there are no observations documenting its data, we estimate 2008 production to be about 4,000 tons, atmospheric abundance. Current publications report a long with a likely range of ±25%. Planned expansion could lifetime of 740 yr and a global warming potential (GWP), double this by 2010. which in the Kyoto basket is second only to SF6.Were- [3] The published global warming potentials (GWP) of examine the atmospheric chemistry of NF3 and calculate a NF3 are 12,300, 17,200 and 20,700 for time horizons of shorter lifetime of 550 yr, but still far beyond any societal 20, 100, and 500 years, respectively [Forster et al., 2007]. time frames. With 2008 production equivalent to 67 million The increasing GWP with time horizon reflects the longer metric tons of CO2,NF3 has a potential greenhouse impact atmospheric residence time of NF3 compared with that of larger than that of the industrialized nations’ emissions of CO2. -
Ni33nh3+3Nhi
Pure & Appi. Chem., Vol. 49, pp.67—73. Pergamon Press, 1977. Printed in Great Britain. NON-AQJEOUS SOLVENTS FOR PREPARATION AND REACTIONS OF NITROGEN HALOGEN COMPOUNDS Jochen Jander Department of Chemistry, University of Heidelberg, D 69 Heidelberg, Germany Abstract -Theimportance of non—aqueous solvents for the chemistry of haloamines is shown in more recent reaction examples. The solvents must be low-melting because of the general temperature sensitivity of the haloamines. They may take part in the reaction (formation of CH NI •CH NH (CH )2NI, NI-,.5 NH-, and NH0I.NH-)ormay e ner (ormation of I .quinuiilidin, 2 NI •1 trithylenediamine, [I(qunuclidine),] salts pure NBr, and compounds of the type R1R2NC103 with R1 and R2 =orgnicgroup or hydrogen). INTRODUCTION Non-aqueous solvents play an important role in preparation and reactions of nitrogen halogen compounds. Due to the fact, that all haloamines are derivatives of ammonia or amines, liquid ammonia or liquid organic amines are used as solvents very often. Liquid ammonia and the lower organic amines reveal, in addition, the advantage of low melting points (liquid ammonia -78, liquid monomethylamine -93.5, liquid dimethylamine -92, liquid tn-. methylamine -12k°C); these meet the general temperature sensitivity of the nitrogen halogen compounds, especially of the pure .lorganic ones. Ammonia and amines are very seldom inert solvents; they mostly take part in the reaction planned for synthesis or conversion of the haloamine. In case a reaction of the solvent is to be avoided, one has to look for a low melting inert solvent, for example methylene chloride (m.p. -
Ereztech LLC P3553 Safety Data Sheet
EREZTECH LLC 11555 Medlock Bridge Road, Suite 100, Johns Creek, GA 30097, USA T: +1.888.658.1221 F: 1.678.619.2020 E: [email protected] W: https://ereztech.com Section 1. Identification Product Name: Phosphorus trifluoride Product Type: Gas CAS Number: 7783-55-3 Product Number: P3553 Product Manufacturer: Ereztech LLC 11555 Medlock Bridge Road, Suite 100 Johns Creek, GA 30097 Product Information: (888) 658-1221 In Case of an Emergency: CHEMTREC: 1-800-424-9300 (USA); +1 703-527-3887 (International); CCN836180 *** Contact manufacturer for all non-emergency calls. Section 2. Hazards Identification Appearance/Odor: Colorless, odorless gas. Classification: ACUTE TOXICITY, ORAL - Category 4, H302 ACUTE TOXICITY, DERMAL - Category 4, H312 SKIN CORROSION/IRRITATION - Category 1B, H314 SERIOUS EYE DAMAGE/EYE IRRITATION - Category 2, H318 ACUTE TOXICITY, INHALATION - Category 1, H330 SPECIFIC TARGET ORGAN TOXICITY, SINGLE EXPOSURE; RESPIRATORY TRACT IRRITATION – Category 3, H335 GHS Label Elements Hazard Pictograms: Signal Word: DANGER Hazard Statements: H302: Harmful if swallowed. H312: Harmful in contact with skin. H314: Causes severe skin burns and eye damage. H318: Causes serious eye damage. H330: Fatal if inhaled. H335: May cause respiratory irritation. Ereztech P3553 Page 1 of 13 Revision: 1.00 Date of Issue: 11/27/2020 Phosphorus trifluoride Safety Data Sheet Section 2. Hazards Identification Precautionary Statements Prevention: P260: Do not breathe fumes/gases/mists/vapors/sprays. P264: Wash skin thoroughly after handling. P270: Do not eat, drink or smoke when using this product. P271: Use only outdoors or in a well-ventilated area. P280: Wear protective gloves/ protective clothing/ eye protection/ face protection. -
Nitrogen Trifluoride
Nitrogen trifluoride (CAS No: 7783-54-2) Health-based Reassessment of Administrative Occupational Exposure Limits Committee on Updating of Occupational Exposure Limits, a committee of the Health Council of the Netherlands No. 2000/15OSH/125, The Hague, June 8, 2004 Preferred citation: Health Council of the Netherlands: Committee on Updating of Occupational Exposure Limits. Nitrogen trifluoride; Health-based Reassessment of Administrative Occupational Exposure Limits. The Hague: Health Council of the Netherlands, 2004; 2000/15OSH/125. all rights reserved 1 Introduction The present document contains the assessment of the health hazard of nitrogen trifluoride by the Committee on Updating of Occupational Exposure Limits, a committee of the Health Council of the Netherlands. The first draft of this document was prepared by MA Maclaine Pont, M.Sc. (Wageningen University and Research Centre, Wageningen, the Netherlands). In November 1999, literature was searched in the databases Toxline, Medline, and Chemical Abstracts, starting from 1981, 1966, and 1937, respectively, and using the following key words: nitrogen trifluoride, nitrogen fluoride (NF3), and 7783-54-2. In February 2001, the President of the Health Council released a draft of the document for public review. No comments were received. An additional search in Toxline and Medline in January 2004 did not result in information changing the committee’s conclusions. 2Identity name : nitrogen trifluoride synonyms : nitrogen fluoride; trifluoroamine; trifluoroammonia; perfluoroammonia molecular formula : NF3 CAS number : 7783-54-2 3 Physical and chemical properties molecular weight : 71.0 boiling point : -129oC melting point : -208.5oC flash point : - vapour pressure : at 20°C: >100 kPa solubility in water : very slightly soluble log Poctanol/water : -1.60 conversion factors : at 20°C, 101.3 kPa: 1 mg/m3 = 0.34 ppm 1 ppm = 2.96 mg/m3 Data from ACG91, NLM04, http://esc.syrres.com. -
Reactions of Lithium Nitride with Some Unsaturated Organic Compounds. Perry S
Louisiana State University LSU Digital Commons LSU Historical Dissertations and Theses Graduate School 1963 Reactions of Lithium Nitride With Some Unsaturated Organic Compounds. Perry S. Mason Jr Louisiana State University and Agricultural & Mechanical College Follow this and additional works at: https://digitalcommons.lsu.edu/gradschool_disstheses Recommended Citation Mason, Perry S. Jr, "Reactions of Lithium Nitride With Some Unsaturated Organic Compounds." (1963). LSU Historical Dissertations and Theses. 898. https://digitalcommons.lsu.edu/gradschool_disstheses/898 This Dissertation is brought to you for free and open access by the Graduate School at LSU Digital Commons. It has been accepted for inclusion in LSU Historical Dissertations and Theses by an authorized administrator of LSU Digital Commons. For more information, please contact [email protected]. This dissertation has been 64—5058 microfilmed exactly as received MASON, Jr., Perry S., 1938- REACTIONS OF LITHIUM NITRIDE WITH SOME UNSATURATED ORGANIC COMPOUNDS. Louisiana State University, Ph.D., 1963 Chemistry, organic University Microfilms, Inc., Ann Arbor, Michigan Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. REACTIONS OF LITHIUM NITRIDE WITH SOME UNSATURATED ORGANIC COMPOUNDS A Dissertation Submitted to the Graduate Faculty of the Louisiana State University and Agricultural and Mechanical College in partial fulfillment of the requireiaents for the degree of Doctor of Philosophy in The Department of Chemistry by Perry S. Mason, Jr. B. S., Harding College, 1959 August, 1963 Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. -
High-Quality, Low-Cost Bulk Gallium Nitride Substrates
ADVANCED MANUFACTURING OFFICE High-Quality, Low- Cost Bulk Gallium Nitride Substrates Electrochemical Solution Growth: A Scalable Semiconductor Manufacturing Process The ever-growing demand in the past decade for more energy efficient solid-state lighting and electrical power conversion is leading to a higher demand for wide bandgap semiconductor-based devices, such as gallium nitride (GaN), over traditional silicon (Si)-based devices. High cost and limited availability, how- ever, have hindered the adoption of GaN substrates to date. When utilizing GaN, current LED and power electronic device applications employ GaN epitaxially grown on top of non-GaN substrates. The lattice mismatch between the epitaxial GaN layer and the non-native substrate surface leads to con- siderable stress and high defect densities, ultimately compromising device yield and Conceptual diagram of the ESG reactor. Photo courtesy of Sandia National Laboratories performance. While bulk growth of GaN can combat these issues, current growth methods for bulk GaN have not fostered widespread adoption to date due to lim- This project will help develop ESG into a viable GaN bulk growth process that is well ited scalability, low material quality, high suited for scalability to large-area wafer manufacturing. Bulk GaN is important to bol- operating temperatures and pressures, stering U.S. competitiveness in high-efficiency power electronics and solid-state lighting. and slow growth rates. A fundamentally different manufacturing route for bulk Benefits for Our Industry and Our Nation growth of GaN not driven by thermal pro- Scaling the ESG growth method to large area GaN crystals could reduce the production cesses is needed to provide an adequate cost of bulk GaN wafers by up to a factor of 10. -
Theoretical Study on the Molecular and Crystal Structures of Nitrogen Trifluoride and It’S Adduct with BF3
J. Chem. Sci. Vol. 127, No. 8, August 2015, pp. 1491–1496. c Indian Academy of Sciences. DOI 10.1007/s12039-015-0857-3 Theoretical study on the molecular and crystal structures of nitrogen trifluoride and it’s adduct with BF3 HONGCHEN DUa,b,c aSchool of Science, Zhejiang A & F University, Linan, 311300, China bZhejiang Provincial Key Laboratory of Chemical Utilization of Forestry Biomass, Zhejiang A & F University, Lin’an, 311300, China cPresent address: Weifang University of Science and Technology, Jinguang Street 1299, Shouguang, 262700, China e-mail: [email protected]; [email protected] MS received 30 April 2014; revised 30 October 2014; accepted 27 January 2015 Abstract. The molecular and crystal structure of the adduct NF3·BF3 was studied computationally using density functional theory. It shows that the adduct exists in the form of a complex but is not ionic. The heats of formation in the gas and the condensed phase of the adduct are −1266.09 and −1276.37 kJ·mol−1, respectively, which indicates that it is stable under atmospheric conditions. The crystal form belongs to P 21/c space group. The calculated large band gap (Eg) of the crystal proves that it is stable. The conduction band (LUCO) is mainly contributed by the p orbital of N atom and the valence band (HOCO) from the p orbital of F atom. Keywords. Molecular; crystal; structure; property; theoretical study. 1. Introduction investigation even though there is limited information on the structure–property relationship, especially on the Molecular complexes containing boron trifluoride as a crystal structure of NF3 with BF3. -
Cleaning Gas Mixture for an Apparatus and Cleaning Method
Europäisches Patentamt *EP001529854A1* (19) European Patent Office Office européen des brevets (11) EP 1 529 854 A1 (12) EUROPEAN PATENT APPLICATION (43) Date of publication: (51) Int Cl.7: C23C 16/44, H01L 21/00 11.05.2005 Bulletin 2005/19 (21) Application number: 04256591.1 (22) Date of filing: 26.10.2004 (84) Designated Contracting States: (72) Inventors: AT BE BG CH CY CZ DE DK EE ES FI FR GB GR • Isaki, Ryuichiro, HU IE IT LI LU MC NL PL PT RO SE SI SK TR Taiyo Nippon Sanso Corporation Designated Extension States: Shinagawa-ku, Tokyo (JP) AL HR LT LV MK • Shinriki, Manabu, Taiyo Nippon Sanso Corporation (30) Priority: 04.11.2003 JP 2003374160 Shinagawa-ku, Tokyo (JP) (71) Applicant: Taiyo Nippon Sanso Corporation (74) Representative: Smyth, Gyles Darren Shinagawa-ku, Tokyo (JP) Marks & Clerk 90 Long Acre London WC2E 9RA (GB) (54) Cleaning gas mixture for an apparatus and cleaning method (57) A cleaning gas improves the etching reaction and an integer from 1 to 3, y is an integer from 1 to 12, rate of cleaning gas including a fluorocarbon gas, and and z is selected from 0 and 1 and oxygen gas, to which increases the cleaning effect. And the cleaning method is added at least one selected from the group of nitrogen uses the cleaning gas. A mixed gas of a fluorocarbon trifluoride, fluorine, nitrous oxide, nitrogen, and rare gas- gas represented by the general formula of CvHxFyOz, es up to 10% by volume based on the total gas volume. wherein v is an integer from 1 to 5, x is selected from 0 EP 1 529 854 A1 Printed by Jouve, 75001 PARIS (FR) 1 EP 1 529 854 A1 2 Description ciency since these are raw materials for producing fluor- ocarbon type resins such as TEFLON (trademark), and BACKGROUND OF THE INVENTION are used in significantly large amounts in the chemical industry. -
(12) Patent Application Publication (10) Pub. No.: US 2005/0044778A1 Orr (43) Pub
US 20050044778A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2005/0044778A1 Orr (43) Pub. Date: Mar. 3, 2005 (54) FUEL COMPOSITIONS EMPLOYING Publication Classification CATALYST COMBUSTION STRUCTURE (51) Int. CI.' ........ C10L 1/28; C1OL 1/24; C1OL 1/18; (76) Inventor: William C. Orr, Denver, CO (US) C1OL 1/12; C1OL 1/26 Correspondence Address: (52) U.S. Cl. ................. 44/320; 44/435; 44/378; 44/388; HOGAN & HARTSON LLP 44/385; 44/444; 44/443 ONE TABOR CENTER, SUITE 1500 1200 SEVENTEENTH ST DENVER, CO 80202 (US) (57) ABSTRACT (21) Appl. No.: 10/722,127 Metallic vapor phase fuel compositions relating to a broad (22) Filed: Nov. 24, 2003 Spectrum of pollution reducing, improved combustion per Related U.S. Application Data formance, and enhanced Stability fuel compositions for use in jet, aviation, turbine, diesel, gasoline, and other combus (63) Continuation-in-part of application No. 08/986,891, tion applications include co-combustion agents preferably filed on Dec. 8, 1997, now Pat. No. 6,652,608. including trimethoxymethylsilane. Patent Application Publication Mar. 3, 2005 US 2005/0044778A1 FIGURE 1 CALCULATING BUNSEN BURNER LAMINAR FLAME VELOCITY (LFV) OR BURNING VELOCITY (BV) CONVENTIONAL FLAME LUMINOUS FLAME Method For Calculating Bunsen Burner Laminar Flame Velocity (LHV) or Burning Velocity Requires Inside Laminar Cone Angle (0) and The Gas Velocity (Vg). LFV = A, SIN 2 x VG US 2005/0044778A1 Mar. 3, 2005 FUEL COMPOSITIONS EMPLOYING CATALYST Chart of Elements (CAS version), and mixture, wherein said COMBUSTION STRUCTURE element or derivative compound, is combustible, and option 0001) The present invention is a CIP of my U.S. -
Chemical Chemical Hazard and Compatibility Information
Chemical Chemical Hazard and Compatibility Information Acetic Acid HAZARDS & STORAGE: Corrosive and combustible liquid. Serious health hazard. Reacts with oxidizing and alkali materials. Keep above freezing point (62 degrees F) to avoid rupture of carboys and glass containers.. INCOMPATIBILITIES: 2-amino-ethanol, Acetaldehyde, Acetic anhydride, Acids, Alcohol, Amines, 2-Amino-ethanol, Ammonia, Ammonium nitrate, 5-Azidotetrazole, Bases, Bromine pentafluoride, Caustics (strong), Chlorosulfonic acid, Chromic Acid, Chromium trioxide, Chlorine trifluoride, Ethylene imine, Ethylene glycol, Ethylene diamine, Hydrogen cyanide, Hydrogen peroxide, Hydrogen sulfide, Hydroxyl compounds, Ketones, Nitric Acid, Oleum, Oxidizers (strong), P(OCN)3, Perchloric acid, Permanganates, Peroxides, Phenols, Phosphorus isocyanate, Phosphorus trichloride, Potassium hydroxide, Potassium permanganate, Potassium-tert-butoxide, Sodium hydroxide, Sodium peroxide, Sulfuric acid, n-Xylene. Acetone HAZARDS & STORAGE: Store in a cool, dry, well ventilated place. INCOMPATIBILITIES: Acids, Bromine trifluoride, Bromine, Bromoform, Carbon, Chloroform, Chromium oxide, Chromium trioxide, Chromyl chloride, Dioxygen difluoride, Fluorine oxide, Hydrogen peroxide, 2-Methyl-1,2-butadiene, NaOBr, Nitric acid, Nitrosyl chloride, Nitrosyl perchlorate, Nitryl perchlorate, NOCl, Oxidizing materials, Permonosulfuric acid, Peroxomonosulfuric acid, Potassium-tert-butoxide, Sulfur dichloride, Sulfuric acid, thio-Diglycol, Thiotrithiazyl perchlorate, Trichloromelamine, 2,4,6-Trichloro-1,3,5-triazine -
1. Hydrogen Forms Compounds with Most Non-Metallic Elements and with Some Metals
PMT 1. Hydrogen forms compounds with most non-metallic elements and with some metals. (a) Calculate the empirical formula of the compound used in the manufacture of artificial rubber which has the following composition by mass. Hydrogen 11.1% Carbon 88.9% (3) (b) The boiling temperatures of hydrogen chloride and hydrogen iodide are: Hydrogen chloride ±85ºC Hydrogen iodide ±35ºC Explain why hydrogen iodide has a higher boiling temperature than hydrogen chloride. ............................................................................................................................. ... ............................................................................................................................. ... ............................................................................................................................. ... (2) (c) Draw and explain the shapes of: (i) the PH3 molecule; .......................................................... ............................................................ ...................................................................................................................... (2) 1 PMT ± (ii) the AlH4 ion. ...................................................................................................................... ...................................................................................................................... (2) 3 (d) Calculate the number of molecules in 8.0 cm of gaseous phosphine, PH3, at room temperature and pressure. (The molar volume of