Arxiv:2102.07912V3 [Cond-Mat.Str-El] 18 Jul 2021

This is a preprint of an article published in the Physical Review B with the Editor’s Suggestion. The ﬁnal authenticated version is available online at doi:10.1103/PhysRevB.104.045102.

Lattice dynamics of the Ta2Ni(Se1−xSx)5 excitonic insulator

Mai Ye,1, ∗ Pavel A. Volkov,1, † Himanshu Lohani,2 Irena Feldman,2 Minsung Kim,1 Amit Kanigel,2 and Girsh Blumberg1, 3, ‡ 1Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA 2Department of Physics, Technion - Israel Institute of Technology, Haifa 32000, Israel 3National Institute of Chemical Physics and Biophysics, 12618 Tallinn, Estonia (Dated: July 20, 2021) Recently, we employed electronic polarization-resolved Raman spectroscopy to reveal the strongly correlated excitonic insulator (EI) nature of Ta2NiSe5 [Volkov et al., npj Quant. Mater. 6, 52 (2021)], and also showed that for Ta2Ni(Se1−xSx)5 alloys the critical excitonic fluctuations di- minish with sulfur concentration x exposing a cooperating lattice instability that takes over for large x [Volkov et al., arXiv:2104.07032]. Here we focus on the lattice dynamics of the EI family Ta2Ni(Se1−xSx)5 (x = 0, ..., 1). We identify all Raman-active optical phonons of Ag (fully symmetric) and B2g (ac-quadrupole-like) symmetries (D2h point group) and study their evolution with temperature and sulfur concentration. We demonstrate the change of selection rules at temperatures below the orthorhombic-to-monoclinic transition at Tc(x) that is related to the EI phase. We find that Tc(x) decrease monotonically from 328 K for Ta2NiSe5 to 120 K for Ta2NiS5 and that the magnitude of lattice distortion also decreases with the sulfur concentration x. For x < 0.7, the two lowest-frequency B2g phonon modes show strongly asymmetric lineshapes at high temperatures due to Fano interference with the broad excitonic continuum present in a semimetallic state. Within the framework of extended Fano model, we develop a quantitative description of the interacting exciton-phonon excitation lineshape, enabling us to derive the intrinsic phonon parameters and determine the exciton-phonon interaction strength, that affects the transition temperature Tc(x). While at low temperatures the intrinsic phonon parameters are in good agreement with the ab initio calculations and the anharmonic decay model, their temperature dependencies show several anomalous behaviors: (i) Frequencies of B2g phonons harden pronouncedly upon cooling in vicinity of Tc(x) for x < 0.7 semimetals and, in contrast, soften monotonically for Ta2NiS5 semiconductor; (ii) The lifetime of certain phonons increases strongly below Tc(x) for x < 0.7 revealing the gap opening in the broken symmetry phase; (iii) For most modes, the intensity shows rather strong temperature dependence hat we relate to the interplay between electronic and phononic degrees of freedom. For Ta2NiSe5 we also observe signatures of the acoustic mode scattered assisted by the structural domain walls formed below Tc. Based on our results, we additionally present a consistent interpretation of the origin of oscillations observed in time-resolved pump-probe experiments.

I. INTRODUCTION that connects the valence band maximum to the con- duction band minimum. One such example is semimetal In a narrow-gap semiconductor or semimetal, if the ex- 1T-TiSe2, which has been proposed to hold an excitonic citon binding energy exceeds the band gap, the Coulomb insulating state below 190 K [4–7]. In contrast, if the attraction between electrons and holes favors sponta- band gap is direct, excitonic condensation only results in neous formation of a macroscopic number of excitons. lattice distortion which breaks point-group symmetry. In These bosonic quasiparticles then form a coherent state, this situation, the size of the unit cell does not change but opening an interaction-induced gap and leading to a in- its shape changes. Ta2NiSe5 is a candidate for excitonic sulating phase, named excitonic insulator [1–3]. If the insulator of this kind. electron and hole states belong to bands of different sym- Ta2NiSe5 shows a second-order structural phase tran- metry, the resulting excitonic insulator state is expected sition at Tc = 326 K [8,9]. In the high temperature to break the crystal lattice symmetry. phase, this material has a orthorhombic structure (point Consider the case of a semimetal. If the band gap is group D2h); in the low-temperature phase, the struc- indirect, i.e. the valence band maximum and the con- arXiv:2102.07912v3 [cond-mat.str-el] 18 Jul 2021 tural is monoclinic (point group C2h) with the angle β duction band minimum are located at different places in between a and c directions deviating from 90◦, Fig.1. the k-space, condensation of excitons leads to a charge- Below Tc , the valence-band top flattens as discovered density-wave (CDW) state and accompanying crystal dis- by angle-resolved photoemission spectroscopy (ARPES) tortion which breaks translational symmetry [3]. The studies [10–12]. Band flatness at low temperature is CDW wavevector is then given by the spanning vector viewed as a characteristic feature of the excitonic insulator ground state. Moreover, studies of nonequilibrium dynamics have demonstrated photoinduced enhancement ∗ [email protected] of excitonic order [13, 14], photoinduced multistage phase † [email protected] transitions [15], ultrafast reversal of excitonic order [16], ‡ [email protected] and coherent order-parameter oscillations [17]. 2

(a) (b) a this Fano-type interference eﬀect. Using this model, we

T > Tc disentangle the excitonic and phononic contributions to c the Raman response, and illustrate the effect of the cou- β = 90° pling between them: apart from renormalizing the bare phononic and excitonic responses, this effect also results Selenium Tantalum T < Tc in an additional interference term in the total Raman response. We find that the B2g phonon modes exhibit no β > 90° intrinsic softening on cooling towards the transition tem- b perature. In contrast, the excitonic response shows clear

Nickel soft-mode behavior [23, 24]. Additionally, many modes c a exhibit an anomalous increase in linewidth above Tc, sug- gesting the closing of the EI gap. For Ta2NiSe5 below FIG. 1. Crystal structure of Ta2NiSe5. The frame in (a) Tc , we also observe signatures of the acoustic excitations indicates the unit cell. with finite momenta, enabled by the formation of a quasi- periodic structure of domain walls. For Ta2NiS5 , on the contrary, the phonon modes in The lattice degrees of freedom play an important the symmetry-breaking channel maintain symmetric line- role in the physics of Ta2NiSe5. In particular, the shape, but their frequency anomalously decreases upon orthorhombic-to-monoclinic structural change can be in- cooling. Because the structural change for Ta2NiS5 is duced via electron-phonon coupling [18] even if the ori- very weak, no anomaly of phonon frequency or width is gin of the transition is excitonic [19]. Moreover, a re- detected around its structural transition temperature. cent study combining ultrafast experiments with calcu- For all compositions, we find that most phonons ex- lations proposes that the phase transition in Ta2NiSe5 hibit strong dependence of their intensity on tempera- is structural in its nature [20]. Thus, understanding the ture, and present arguments in favor of this being a result underlying phsyics of excitonic insulator candidates re- of a coupling to electronic excitations. quires the lattice dynamics to be examined in a detailed Additionally, we perform density functional the- way. Interestingly, substitution of Se with S results in ory (DFT) calculations of the lattice dynamics for a whole family of compounds Ta Ni(Se S ) , where 2 1−x x 5 Ta2NiSe5 and Ta2NiS5 . The phonon frequencies agree the orthorhombic-to-monoclinic transition has been sug- well with the experiment, and the obtained displace- gested to be suppressed with x [8]. While it is known, ment patterns of the optical modes allow to explain the that S substitution leads to an enhanced direct band differences of the couplings of the three non-symmetric gap [21], which is detrimental to the EI state, its effects phonons to the excitonic continuum. on the lattice modes has not been systematically studied. Finally, we demonstrate that our results are consistent Because the inversion symmetry of Ta2Ni(Se1−xSx)5 with the modes observed in time-resolved experiments. is preserved across Tc , the soft mode of this zero- We show however, that the signatures of the Fano-shaped wavevector structural transition, if any, is Raman active. phonons and the excitonic continuum above Tc may be Polarization resolved low frequency Raman spectroscopy, hard to observe in that type of experiments. therefore, is particularly suitable for studying the physics The rest of this paper is organized as follows. In of the phase transition, and for evaluating the contribu- Sec.II we describe the sample preparation and experi- tion of the lattice vibrations to the transition. This ex- mental setup. In Sec.III we show an overview of the perimental method offers both the high energy resolution phonon spectra of Ta2Ni(Se1−xSx)5 family, and compare and the ability to selectively probe bosonic excitations in the measured phonon frequencies at low temperatures different symmetry channels [22]. with the calculated values. In Sec.IV from the tem- In this work, we present a systematic study of the lat- perature dependence of the phonon intensity we obtain tice dynamics for the family of Ta2Ni(Se1−xSx)5 (x = phase transition temperatures, which are compared with 0, 0.25, 0.67, and 1) pristine crystals and alloys to the resistance measurements. In Sec.V we analyze the quantitatively explore the spectral parameters of the Fano interference feature of B2g-symmetry Raman re- phonons. We find the change of selection rules, indicat- sponse. In Sec.VI we present the temperature depen- ing an orthorhombic-to-monoclinic structural transition dence of phonon-mode parameters: the results for B2g- at Tc(x), which is finite for all x. The transition temper- symmetry modes are given in SubSec.VIA, and those ature Tc(x) and the magnitude of lattice distortion both for Ag-symmetry modes are given in SubSec.VIB. In decrease with sulfur concentration x. Sec.VII we convert Raman response from frequency do- For Ta2Ni(Se1−xSx)5 with x ≤ 0.67, the two lowest- main to time domain, and discuss relevant time-resolved energy symmetry-breaking B2g phonon modes exhibit studies on Ta2NiSe5. In Sec.VIII we provide a summary strong asymmetric lineshape above the transition tem- of the observations and their implications. Further dis- perature, resulting from the coupling between these cussion is provided in appendices: the methods used for modes and an excitonic continuum of the same symmetry. the estimation of laser heating rate in Appendix.A; the We develop an extended model to analyze the physics of mathematical formalism for the generalized Fano model 3 in AppendixB, and more illustration of this model in AppendixC; the fitting results of the anharmonic decay TABLE I. The Raman selection rules in the high-temperature orthorhombic (point group D ) and low-temperature mono- model for the phonon modes in AppendixD. 2h clinic (point group C2h) phases. Upon the reduction of symmetry from D2h to C2h, the Ag and B2g irreducible representations of D2h group merge into the Ag irreducible represen- II. EXPERIMENTAL tation of C2h group.

Scattering Symmetry Channel Symmetry Channel Single crystals of Ta Ni(Se S ) family were grown 2 1−x x 5 Geometry (D group) (C group) by chemical vapor transport method. Elemental pow- 2h 2h ders of tantalum, nickel, selenium and sulfur were mixed aa Ag Ag with stoichiometric ratio and then sealed in an evacu- ac B2g Ag ated quartz ampule with a small amount of iodine as the transport agent. The mixture was placed in the hot end of the ampule (∼950◦C) under a temperature gra- The 647 nm line from a Kr+ ion laser was used for ex- dient of about 10◦C/cm. After about a week mm-sized citation. Incident light was focused to an elongated along needle-like single crystals were found at the cold end of the slit direction 50×100 µm2 spot. For data taken below the ampule. The crystals are shiny and cleave easily. 310 K, laser power of 8 mW was used. To reach temper- We used x-ray diffraction and electron dispersive X-ray ature above 310 K, we kept the environmental tempera- spectroscopy to verify the exact composition of the crys- ture at 295 K and increased laser power to reach higher tals and their uniformity. The samples for resistance and sample temperature in the excitation spot. All reported Raman measurements are from the same batch. data were corrected for laser heating in two mutually The resistance is measured along a axis in a four-probe consistent ways [Appendix.A]: (i) by Stokes/anti-Stokes configuration using a Quantum Design PPMS system. intensity ratio analysis, based on the principle of detailed The TEM images of domain structures are taken on a balance, (ii) by checking laser power that is inducing FEI Titan Themis G2 system using a Gatan double-tilt the phase transition. In addition to that, we performed cryo-stage. a thermoconductivity model calculation that suggests a For Raman measurements, the samples were cleaved linear scaling of the heating rate with the beam spot size. in ambient conditions to expose the ac plane; the cleaved The first-principle calculations were performed us- surfaces were then examined under a Nomarski mi- ing DFT within Projector Augmented-Wave (PAW) croscope to find a strain-free area. Raman-scattering formalism [25] and Perdew-Burke-Ernzerhof (PBE) measurements were performed in a quasi-back-scattering parametrized exchange-correlation energy functional geometry from the samples mounted in a continuous [26]. For Ta2NiSe5, we used the implementation of the helium-gas-flow cryostat. Quantum ESPRESSO package [27], using the pseudopo- For acquisition of the low frequency Raman response tentials generated by Dal Corso [28] and with grimme- required for this study, we used a custom fast f/4 high d3 Van-der-Waals correction [29] included. For Ta2NiS5, resolution 500/500/660 mm focal lengths triple-grating the implementation of the Vienna Ab initio Simulation spectrometer with 1800 mm−1 master holographic grat- Package (VASP) code [30, 31] was used. The phonon fre- ings comprised of (i) aberration corrected subtractive quencies for both cases were calculated by finite displace- stage providing a reliable 12 orders-of-magnitude stray ment method as implemented in PHONOPY [32]. The −1 light rejection at as low frequency as 4 cm from the initial structures subject to relaxation for Ta2NiSe5 and elastic line, (ii) a third stage monochromator, and (iii) a Ta2NiS5 have been taken from experiments on the high- liquid-nitrogen-cooled charge-coupled device (CCD) de- temperature orthorhombic phase, Ref.[33] and Ref.[34], tector (Princeton Instruments). All the acquired data respectively. were corrected for the spectral response of the spectrometer. Three slit configurations were used: 100 µm slit width providing 0.19 meV spectral resolution; 50 µm slit III. OVERVIEW width rendering 0.10 meV spectral resolution; and, for high resolution data, 25 µm slit width rendering 0.06 meV In this section we show an overview of the phonon spec- spectral resolution. tra of Ta2Ni(Se1−xSx)5 family, and compare the mea- For polarization optics, a Glan-Taylor polarizing prism sured phonon frequencies at low temperatures with the (Melles Griot) with a better than 10−5 extinction ratio to calculated values. clean the laser excitation beam and a broad-band 50 mm The phonon spectra of Ta2Ni(Se1−xSx)5 family (x=0, polarizing cube (Karl Lambrecht Corporation) with an 0.25, 0.67, and 1) are summarized in Fig.2. For stoi- extinction ratio better than 1:500 for the analyzer was chometric compositions at high temperature, we observe used. Two polarization configurations were employed to 8 modes in aa geometry and 3 modes in ac geometry, in probe excitations in different symmetry channels. The agreement with the 8 Ag and 3 B2g Raman-active phonon relationship between the scattering geometries and the modes expected in the high-temperature orthorhombic symmetry channels [22] is given in TableI. phase (space group Cmcm): the Ag modes appear in 4

�� aa �� aa 3 5 2 (a) 4 6 7 (e) 3 TABLE II. Comparison of the experimentally measured ) 1 ) 3 �� 8 �� 1 phonon energies at 35 K and the calculated values for 2 4 5 6 7 4 8 6 Ta2NiSe5 and Ta2NiS5. Unit is meV; modes are identiﬁed by �� ( �� ( ��

χ their irreducible representations in the orthorhombic phase, χ where 8 Ag modes and 3 B2g modes are expected. � Ta2NiSe5 � Ta2Ni(Se0.75S0.25)5 �� 1 �� ac 0.06meV ac �� (��) 1 �� (��) Ta2NiSe5 Ta2NiS5 (b) 2 3 0.19meV (f) ) ) �� Mode Exp. Calc. Exp. Calc. 2 3 (1) Ag 4.22 4.22 5.01 4.82 �� ( �� ( �� 3 (1) χ χ B2g 8.66 7.61 6.50 7.66 (2) � � Ag 12.28 11.87 16.13 15.18 � �� (2) �� aa 2�� (��) aa �� (��) B2g 15.25 10.14 16.41 16.20 3 5 (c) (g) (3) ) 4 ) Ag 16.76 15.53 19.13 18.27 �� 1 8 �� 3 6 7 1 3 (3) 2 58 B2g 18.38 19.39 32.96 33.23 456 7 8 �� 4 (4) ( �� ( �� 6 �� 7 Ag 22.17 21.91 33.82 33.82 χ χ (5) Ag 24.14 24.09 36.50 36.36 � � Ta2NiS5 Ta2Ni(Se0.33S0.67)5 (6) �� ac 1 �� ac Ag 27.02 26.34 40.07 40.13 �� (��3 ) �� (��) (7) (d) (h) 1

) A 29.39 29.01 43.10 43.07 2 ) g �� (8) Ag 36.32 37.47 49.49 49.62 2 �� ( �� ( �� 3 χ

χ 3

� � � �� The measured phonon frequencies for Ta2NiSe5 and �� (��) �� (��) Ta2NiS5 at 35 K generally match well with the calculated

00 values [Table.II]. As the calculations were carried out in FIG. 2. Raman response χ in the aa and ac scattering the orthorhombic phase, this suggests that monoclinicity geometries for Ta Ni(Se S ) family, plotted in semi-log 2 1−x x 5 by itself does not strongly affect the phonon frequencies. scale. The phonon modes are classified by the Ag and B2g irreducible representations of D point group. The A and Larger than 10% discrepancies between the measured and 2h g (1) (2) B2g modes of Ta2NiSe5 are labeled by red and green colors, calculated values appear only for the B2g and B2g modes respectively; the Ag and B2g modes of Ta2NiS5 are labeled (1) of Ta2NiSe5 and the B2g mode of Ta2NiS5. As discussed by purple and blue colors, respectively. For the samples with in Sec.V, these modes exhibit an anomalous behavior x = 0.25 and 0.67, the modes are labeled by the color scheme of Ta NiSe if its energy is close to that of Ta NiSe modes, that can be attributed to their strong coupling to the 2 5 2 5 excitons. or the color scheme of Ta2NiS5 if its energy is close to that of Ta2NiS5 modes. The spectral resolution is 0.19 meV for For the alloy compositions (x = 0.25 and 0.67), the the ac spectra at high temperature, and 0.06 meV for the ac phonon modes show larger linewidth compared with that spectra at 35 K and all aa spectra. (3) for the stoichometric compositions. Moreover, the B2g (3) (8) and Ag -Ag modes exhibit two distinct frequencies: one close to the frequency of that mode in Ta2NiSe5, and the aa scattering geometry and the B2g modes in ac scatter- other close to the frequency in Ta2NiS5. Such behavior ing geometry [Table.I]. Except for the Ta 2NiS5 sample, is commonly observed for alloys in which the frequencies (1) (2) of the same phonon mode in the two end-point materials the two lowest-energy B2g modes, B2g and B2g , exhibit strongly broadened and asymmetric lineshapes at high differ substantially [35–37]. The doping dependence of temperature. This anomalous broadening is almost ab- the phonon frequencies measured at 35 K is presented in sent for Ta2NiS5 (note the logarithmic intensity scale in Fig.3. The frequencies of the phonon modes for Ta 2NiSe5 Fig.2). are consistent with the recent experimental studies [38– 42] and the calculated values [43]. At low temperature, a transition into a monoclinic phase (space group C2/c) occurs. In the low-temperature phase, because of the mirror symmetry breaking, all Raman-active phonon modes appear in both aa and ac IV. PHASE TRANSITION scattering geometries [Table.I]. All of the expected Raman-active modes were observed: they are identified In this section we deduce the phase transition tem- by dashed lines in Fig.2; the additional weak spectral peratures from the observed change in selection rules in features result from the second-order scattering. For ex- Raman response and compare the results with the resis- ample, the weak feature at 34.1 meV in aa scattering ge- tance measurements. ometry for Ta2NiSe5 corresponds to a second-order scat- Below Tc, the 11 phonon modes are allowed by sym- (2) tering feature of the 16.8 meV B2g mode. metry to appear in both scattering geometries [Table.I]; 5

�� (a) (b) TABLE III. The structural phase transition temperature of Ta Ni(Se S ) family determined by observing phonon- �� 2 1−x x 5 mode ”leakage” in Raman spectra. �� Sulfur Content x Transition Temp. (K)

) ) �� 0 328±5 �� ( �� ( 0.25 260±10 �� 0.67 170±10 1 120±10

��

the structural phase transition temperature Tc . The �� phase transition temperatures for Ta2Ni(Se1−xSx)5 family are given in TableIII. The transition temperatures Tc(x) decrease with sulfur doping x. Moreover, for larger �� sulfur content x the phonon intensities in the ’forbid- �� den’ scattering geometry also decrease. This quantity is proportional to the square of the order parameter (OP), FIG. 3. The doping dependence of the Raman-active phonon which can be represented by, e.g., the deviation of the an- frequencies at 35 K for Ta2Ni(Se1−xSx)5 family. For the ◦ (3) (3) (8) gle β between a and c axes [Fig.1 (b)] from 90 . While doped samples, the B2g and Ag -Ag phonons exhibit two- the general monotonic growth of the leakage intensity on mode behavior (i.e. two peaks in the spectrum), characteristic cooling is consistent with these expectations, the details of alloys [35–37]. of temperature dependence can vary for diﬀerent modes [Fig.4(a)]. The decreasing trend of the phonon intensity in the ’forbidden’ scattering geometry with sulfur con- thus, 8 additional modes appear in ac geometry and 3 tent x therefore indicates that the structural distortion in aa. We call the appearance of phonon modes below becomes weaker with higher sulfur concentration. Tc in the orthogonal to allowed above Tc scattering geom- A complementary way to determine the phase transi- etry as phonon-mode ”leakage”. As shown in Fig.2, all tion temperature was demonstrated in [8], where anoma- four samples exhibit phonon-mode ”leakage” at low tem- lies in the temperature dependence of resistance have perature, indicating presence of a point group symmetry been detected at Tc(x). In Fig.5 we show the resis- breaking structural phase transition. tance data analysis for the samples from the same batch In Fig.4 we show the temperature dependence of the as used for the Raman measurements. For Ta NiSe (1) (1) 2 5 ”leakage” of Ag and B2g modes for Ta2Ni(Se1−xSx)5 and Ta2Ni(Se0.75S0.25)5, the temperature at which the family. The ”leakage” of other modes is given in Sec.VI. temperature derivative of resistance displays a kink and For each sample, the ”leakage” of diﬀerent modes appear that of transport activation gap shows a peak, coincides below the same temperature. with the Raman-determined transition temperature. For We assign the temperature of the ”leakage” onset as Ta2Ni(Se0.33S0.67)5 and Ta2NiS5, though, the features in resistance data are less pronounced. The latter can be anticipated from their much more insulating character, 328K 260K 40 60 40 250 potentially masking a small change of resistance due to 50 30 30 200 transition on top of a large background resistance. 40 150 20 30 20 100 20 10 10 Mode (arb. units) Mode (arb. units) 10 50 (1) (1)

g V. FANO INTERFERENCE IN THE B2g

(a) Ta2NiSe5 (c) Ta2Ni(Se0.75S0.25)5 2g 0 0 0 0 0 50 100120K150 200 250 300 350 0 50 100 150170K200 250 300 350 SYMMETRY CHANNEL Temperature (K) Temperature (K) 0.8 (b) Ta2NiS5 8 5 (d) Ta2Ni(Se0.33S0.67)5 200

4 0.6 6 150 3 In this section we analyze the asymmetric lineshape of 0.4 4 100 2 the B2g-symmetry phonon modes observed for x < 0.7 0.2 2 50 1 in the high temperature phase. We describe the asym- Integrated Intensity of A 0.0 0 0 0 Integrated Intensity of B metric lineshape and its temperature dependence in Sub- 0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350 Temperature (K) Temperature (K) Sec.VA. To ﬁt the spectra, we develop a generalized Fano model, discussed in SubSec.VB, in which the FIG. 4. Temperature dependence of the integrated intensity asymmetric broadening results from the coupling of the (1) (1) of Ag and B2g modes in the ’forbidden’ scattering geometry phonon modes to an excitonic continuum. Besides the (ac and aa, respectively) for (a) Ta2NiSe5, (b) Ta2NiS5, (c) optical phonon modes, the excitonic continuum also cou- Ta2Ni(Se0.75S0.25)5, and (d) Ta2Ni(Se0.33S0.67)5. ples to the acoustic phonon mode. We discuss how such 6

120K 170K 260K 328K �� (a) 0.19meV (e) �� 380K 300K (a) �� ) ) 0.19meV �� ) ( ( �� Ω χ χ ( � � � � �� (b) 0.19meV�� (f) � �� (��) �� (��) �� 355K 265K �� ) ) 0.10meV

�� (b) �� (�) �� ( �� ( ��

�� ) χ

χ � / � � �

Ω �� ( � �

�� (c) 0.19meV�� (g) / � �� 330K �� (��) 215K �� (��)

�� )

) 0.10meV - ��-� �� ( �� ( �� χ �� χ �� (c) �� (�) � �

) � � � � �� (d) 0.19meV�� (h) � �� (��) �� (��) � 325K 35K ( �� ) � ) / � �� 0.06meV �� -� - �� ( �� ( �� χ χ -��

�� (�) �� (��) �� (��)

FIG. 5. Temperature dependence of the resistance along FIG. 6. Temperature dependence of Raman response χ00 in a axis for Ta2Ni(Se1−xSx)5 family. (a) The resistance, the ac scattering geometry for Ta2NiSe5. The data is shown plotted in semi-log scale. (b) The temperature deriva- by black dots, along with the Fano fits [Eq. (B1)] shown tive of resistance, plotted in semi-log scale. (c) The tem- as red curves. The spectral resolution is 0.19 meV for pan- perature derivative of the transport activation gap Eg = els (a-e), 0.10 meV for panels (f-g), and 0.06 meV for panel kB T log10 [R(T )/R(360K)]. The transition temperatures de- (h). The Fano model describes the coupled dynamics of the termined from Raman measurements are marked by dashed (1) (3) B2g -B2g phonon modes and the overdamped excitonic con- lines for comparison. tinuum. The bare phonon modes [Eq. (1)] are shown by green curves, and the bare excitonic continuum [Eq. (2)] is shown by blue curves. Below Tc , especially at 300 K, additional spectral weight is observed at low energies, resulting from the emergence of finite-energy acoustic modes due to scattering off structural domain walls (see Fig.9). The purple curves show the coupled response of the acoustic modes and the excitonic continuum. As the excitonic continuum is suppressed on cooling below Tc , the lineshapes of the phonons become essentially symmetric.

coupling enhances the transition temperature Tc(x) , and leads to softening of the B2g -symmetry acoustic mode in SubSec.VC. The appearance of a quasi-periodic do- A. Temperature dependence of asymmetric Fano main wall structure below Tc introduces additional com- lineshapes plexity, and in SubSec.VD, we discuss how the fitting model must be modified to account for low-energy spec- The temperature dependence of the spectra measured tral features which are absent above Tc . The fitting re- in ac scattering geometry for Ta2NiSe5 is shown in Fig.6. sults for Ta2NiSe5, relevant to the excitonic continuum, (1) (2) Above Tc , the B2g and B2g modes have noticeably asym- are presented and interpreted in SubSec.VE (those re- (3) lated to the intrinsic phonon properties are shown later metric lineshapes, while the lineshape of the B2g mode in Sec.VI). It is demonstrated that the strengths of the remains quite symmetric. Upon approaching Tc on cool- interactions between individual phonons and excitonic ing, the spectral weight of low-frequency continuum dis- continuum are consistent with the displacement patterns plays an enhancement, and the apparent linewidths of (1) (2) deduced from ab initio calculations. For comparison, the the B2g and B2g modes increase. Below Tc , the modes fitting results for the alloy compositions are given in Sub- recover the conventional Lorentzian lineshapes. Sec.VF. An asymmetric lineshape arises due to Fano interfer- 7 ence when a sharp phonon interacts with a broad con- and the B2g phonon coordinates is expected [18] (note tinuum. In this case, the continuum is due to the over- that the bare phonons are diagonal normal modes and damped exciton fluctuations [23, 24], and the exciton- thus no bilinear interaction between them is present). phonon interaction is caused by modulation of electronic The resulting response can be obtained by solving the bands near the Fermi surface by the B2g-symmetry lat- coupled equations of motion [AppendixB]. Each of the 00 00 tice vibrations. responses χp (ω) and χe (ω) get renormalized by the interaction, and in addition, the response of the phonon 00 coordinate to the exciton one, χint(ω), becomes finite. B. The generalized Fano model for data above Tc The latter leads to an essential interference term in the total Raman response function [45–47]. We describe the Fano model that includes the coupling To appreciate the effect of renormalization, we first (1−3) consider a simplified case in which the excitonic contin- between the B2g phonon modes and the continuum; more details can be found in AppendixB. uum couples to a single sharp phonon mode (γp ωp) We first discuss the Raman response of the phonons. [AppendixC]. Then, solving the coupled dynamical equa- The Raman scattering intensity is related to the fluctu- tions, one obtains the full Raman response function ation spectrum of the phonon coordinate hQωQ−ωi [44], which is given by the imaginary part of the phonon co- χ00(ω) = 00 ordinate susceptibility χp (ω) times the Bose factor. The ω[2t vω − t (ω2 − ω2)]2 phononic Raman response function consequently has the p p e p 2 2 2 2 2 2 2 2 4 2 (3) form: (Ωe + ω )(ω − ωp) + 4Ωev ωp(ω − ωp) + 4v ωp 2 00(0) 4tpωωpγp could be broken down into a sum of three contributions: χp (ω) = 2 2 2 2 2 2 4 , (1) (ω − ωp) + 2γp (ω + ωp) + γp 00 00 00 00 χ (ω) = χp (ω) + χe (ω) + χint(ω), (4) where tp is the light-scattering vertex for the phonon, ωp is the mode’s bare frequency, and γp is the half width at where the first two terms correspond to the phonon re- half maximum (HWHM) which is related to the oscillator sponse proportional to square of light coupling vertex t2 lifetime. p and the excitonic continuum proportional to t2, respec- An exciton in a gapped system (a semiconductor or in- e tively, while the third one, that is proportional to the sulator) is expected to have a sharply peaked response at t t combination, is the interference term appearing due the exciton energy described by a bosonic response func- p e to the exciton-phonon coupling with strength v [47]. tion similar to the Eq. (1). The most important difference We first discuss the phonon response in the presence for a semimetal is the presence of a gapless continuum of of the coupling with the excitonic continuum. As we will interband particle-hole excitations enabling the decay of show now, the coupling to the continuum of overdamped the q = 0 exciton into unbound particle-hole pairs (Lan- excitonic excitations renormalizes the bare linewidth to dau damping). To describe the continuum in data, we find it sufficient to assume a purely relaxational dynamics 2 v ωp (corresponding to strong overdamping) for the excitonic γv = , (5) p ω2 + Ω2 response. This leads to the form p e t2ω thus, the bare γ can be neglected altogether [48] The χ00(0)(ω) = e , (2) p e 2 2 2 renormalized phonon response is given by (ωe /γe) + ω where te controls the overall intensity determined by the 00 light-scattering vertex and the excitonic density of states, χp (ω) = 2 v ωe is the frequency of the over-damped excitation, and 4tpωωpγp 2 2 3 . (6) γe is the relaxation rate, typically much larger than ωe. 2 2 v 2 2 v2 (ω −ωp) ω − (ωp − 2Ωeγp ) + 4ωpγp + 2 2 Note that for the purpose of the fitting description be- ωp+Ωe 2 low Ωe(T ) = ωe /γe is a single parameter denoting the temperature-dependent peak frequency in the broad re- Comparing Eq. (6) to Eq. (1) for the bare phonon, 00 the phonon frequency renormalization is ω2 → ω2 − sponse function χe (ω). For a purely excitonic transi- p p el 2Ω γv [49]. On increasing coupling strength v, the tion this peak represents the soft mode: Ωe(Tc ) = 0 is e p the condition for bare excitonic transition temperature phononic response maximum shifts to ωp,max = ωp − 2 2 at T el, where the static excitonic susceptibility χ (0) di- v (2ωpΩe−v ) c e 2(v2Ω +ω Ω2+ω3) . verges (see Eq. (B20)). e p e p For the excitonic response χ00(ω) the renormalization In the absence of the exciton-phonon interaction be- e effects are most significant. Those are best illustrated by tween the modes the respective phononic and excitonic the low-frequency slope of the excitonic response func- responses [Eqs.(1) and (2)] simply sum up. The exciton- ∂χ00(ω) e tion ∂ω . In the absence of exciton-phonon in- phonon interaction, however, couples these dynamical re- ω→0 sponses: in particular, a bilinear coupling of the exciton teraction the low frequency slope for the bare response 8

2 2 is equal to te/Ωe (see Eq. (2)), while the interaction v is rapidly enhancing the slope as ��

∂χ00(ω) t2 ) e = e , (7) h i2 �� ∂ω ω→0 2v2 Ωe(T ) − ωp �� (

��

p χ leading to a critical value at vcr = Ωeωp/2, when the excitonic spectral weight is pushed to the lowest frequencies and thus causing the divergence in the static suscep- -�� tibility � � �� (��) 2 v 2 Ωe(T ) te − 4tetp + 2tp χ(ω → 0,T ) = ωp ωp , (8) 2v2 Ωe(T ) − FIG. 7. The eﬀect of coupling on Raman spectrum, relevant ωp to the data measured for Ta2NiSe5 at 380 K. The Raman re- signifying the enhancement of the excitonic phase tran- sponse functions are shown for bare (dashed lines) and renor- 00(0) 00 sition temperature, caused by coupling to the optical malized by interaction (solid lines), χe,p (ω) and χe,p(ω) cor- 00 phonon. respondingly. The interference term χint(ω) is shown by solid Finally, the mutual response of the exciton and phonon orange line. The solid red line corresponds to the total sum of coordinates appearing due to the coupling v between the solid blue, solid green, and solid orange lines, Eq. (4). The them, leads to the sign-changing interference term black dots represent the experimentally measured spectrum.

2 2 ωp−ω 4tetpvωωp 2 2 40 meV. As expected, this quantity remains temperature- 00 Ωe+ωp χint(ω) = 2 2 3 . 2 2 v 2 2 v2 (ω −ωp) independent [Fig. 10(b)]. Second, we perform a global ω − (ωp − 2Ωeγp ) + 4ωpγp + 2 2 ωp+Ωe fitting of the spectral region below 22 meV for all mea- (9) sured temperatures. We assume (consistently with the The sign of this term depends on phase difference be- expectation due to anharmonic effects, see Eq. (16-17) tween the exciton and phonon oscillators. Because the below) the linewidth of the three B2g-symmetry phonon phase of driven by light phononic oscillator is flipping to modes to be a linear function of temperature above Tc . the opposite one at the resonant frequency, the sign of For spectra below Tc , we fit the ”leaked” phonon modes this term changes close to the bare phonon frequency ωp. with the Lorentzian lineshapes, and account for their con- Thus, this term is chiefly responsible for a skewed, asym- tribution in the global fitting. metric shape of the resulting Fano feature. Depending on the sign of v the peak is skewed to the left or to the right of the original phonon frequency. Note that even for C. The coupling between excitonic continuum and weak coupling v ωp this term can have an appreciable acoustic modes magnitude close to the phonon energy. To analyze the actual measured low-frequency data Besides the optical phonon modes, the excitonic con- shown in Fig.6, we use the model with three B 2g op- tinuum also couples to the acoustic phonon modes. The tical phonon modes, all interacting with the excitonic acoustic branch has a linear dispersion ωs(q) = csq (cs continuum, see for details AppendixB. As above, the to- is sound velocity) at small wavectors q; its coupling to tal Raman response χ00(ω) can be similarly decomposed light and to the excitonic continuum both vanish in the √ √ into three contributions, Eq. (4): the first two describ- long-wavelength limit [50]: ts = τs q and vs = βs q (τs ing the renormalized phononic and excitonic responses, and βs are constants). However, the acoustic mode has respectively, with the third one arising due to the inter- important contribution to the enhancement of the phase- ference effects. In Fig.7, an example of such decompo- transition temperature [51]. The the diverging condition sition is shown for the data taken at 380 K, along with for static Raman susceptibility χ(ω → 0,T ) is defined by the deduced bare responses (without the effect of cou- coupling to all modes, optical and acoustic: 00(0) 00(0) pling), χp (ω) and χe (ω). The renormalized phonon 2 2βs features become broader due to the interaction with the Ω˜ e(Tc) − = 0, (10) continuum and their frequencies shift. Most importantly, cs the coupling noticeably increases the excitonic response in which at low frequencies. The sign-changing interference term 3 enhances the asymmetric lineshape of the combined re- X 2v2 Ω˜ (T ) = Ω (T ) − i . (11) sponse. e e ω i=1 pi To fit the ac spectra, first, we determine the te parameter of the excitonic continuum (Eq. (2)) by fit- This equation determines the symmetry-breaking phase ting the phonon free region of spectra between 25 and transition temperature Tc . 9

Because the spectroscopic Fano feature associated with � the coupling between the long-wavelength longitudinal acoustic mode and the excitonic continuum lies at fre- � quencies far below accessibility of Raman experiment, the ) � constant βs cannot be derived directly from an interference feature of a typical Raman spectra. Nevertheless, ��

( �

the coupling constant βs has observable consequences al- �� ready above T . In particular, the acoustic mode has χ c � been shown to soft on cooling towards Tc [52]. This softening does not result from intrinsic instability of the � acoustic modes; rather, it is caused by the coupling of � � � � � �� the acoustic mode to the softening excitonic excitations �� (��) [Eq. (2)]. To demonstrate this point, we solve for the lowest- FIG. 8. The contribution from the acoustic modes to low- energy pole of the Green’s function for the interacting frequency Raman spectrum in ac polarization, relevant to the phononic and excitonic excitations assuming an infinites- data measured for Ta2NiSe5 at 300 K. The data is shown by black dots; the total Fano fit is shown as red curve; the bare imal q. The energy of the pole gives the renormal- excitonic and phononic components are presented in blue and ized (experimentally-measured) sound velocityc ˜s above green, respectively; the coupled response of the acoustic and Tc [Eq. (B23) of AppendixB]: excitonic components is shown in purple. 2β2c c˜2 = c2 − s s , (12) s s ˜ Ωe(T ) pattern, causing the appearance of the additional spectral feature at frequency ω ≈ c q . Therefore, fitting in which c is the bare sound velocity in the absence of d s d s this ultra-low-frequency spectral feature provides an in- coupling to the excitons. Eq. (10) enables us to rewrite dependent approach to determine the coupling constant Eq. (12) as √ vd = βs qd between the acoustic lattice excitations and the excitonic continuum, and hence define the constant s ˜ Ωe(Tc) βs that controls the enhancement of the transition tem- c˜s(T ) = cs 1 − . (13) Ω˜ e(T ) perature to Tc due to coupling between excitons and longitudinal strain fields of the same symmetry. This low- From Eq. (13), it is clear that the sound velocity soft- energy feature due to recoil on the quasi-periodic struc- ens to zero at Tc in the absence of any intrinsic fer- ture of domain walls is best seen about 30 K below Tc , roelastic instability. The renormalization of the sound when the excitonic continuum is sufficiently suppressed velocity above Tc can be estimated by using Eq. (13). but still adequate to provide a Fano-interference feature. Using the low-temperature value of the sound velocity In Fig.9 we compare two TEM images from ac plane cs [52], we can then calculatec ˜s(T ) with the parameters of Ta2NiSe5 measured above and below Tc . The domains obtained from the Fano fits, i.e. without free parame- have stripe shape, aligned parallel to the a-axis. The av- ters. The result yieldsc ˜s(T = 400K)/cs ≈ 0.65, which erage spacing d¯ between these stripes along c-axis direc- is in remarkable agreement with the experimental ratio tion is on the order of 200 A˚. For the purpose of spectral c˜s,exp(T = 400K)/cs,exp ≈ 0.65. The agreement between analysis, we will assume that the spacing between stripes the estimated and experimentally-determined values sug- i in units of the crystal unit cell constant c follows the gests that in Ta2NiSe5, the softening of the acoustic mode Poisson distribution results solely from the coupling to the softening excitonic excitations. d¯ µie−µ P (i; µ = ) = , (14) c i!

D. The generalized Fano model for data below Tc where µ is average inter-domain distance in the number of c-direction unit cells.

Below Tc , especially around 300 K, this model ap- We deduce the unrenormalized speed of sound from pears to be insufficient to account for an additional low- the dispersion of the acoustic mode measured by inelas- frequency spectral weight, see Fig.6(e) and Fig.8. To tic x-ray scattering at temperatures far away from Tc : understand the origin of this spectral feature below a cs ≈ 30 meV A,˚ see Ref. [52]. We also note that at high few meV, we recall that below Tc formation of quasi- temperatures the acoustic excitations away from long- periodic structural domains have been observed by trans- wavelength limit are significantly broadened [52]. mission electron microscopy (TEM) [9, 15]. Such quasi- Recognizing that the low-frequency feature is inhomo- periodic structure can take a recoil of quasi-momenta, geneously broadened by random distribution of the stripe enabling Raman coupling to acoustic mode at finite mo- distances, for the fitting procedure to the measured re- 2π mentum qd = d , where d is the periodicity of the domain sponse function we perform summation over the distri- T=80C

500nm 10 Tc=53C T=80C (a) 350K (b) 300K 137K 328K T=30C � (a) �

Domains ) � Domains

�� -� ( �

� -� -� c -� �� 500nm �� a (b) �� (�) Tc=53C ) � �� ) T=30C FIG. 9. Two images of the Ta2NiSe5 recorded from the ac ��

� �� plane by transmission electron microscopy at (a) 350 K and ( � �� (b) 300 K. ( Ω � Domains � � �

bution function: � � � �� ∞ �� (�) 00 X 00 χ (ω) = P (i; µ)χi (ω), (15) i=1 FIG. 10. Temperature dependence of the Fano ﬁtting param- in which each χ00(ω) is the full response function con- eters for the ac Raman spectra of Ta2NiSe5. (a) The coupling i strength v (i=1,2,3) in Eq. (B4). (b) The light-scattering ver- taining coupling to acoustic mode for domain walls i lat- i tex te, and the frequency at which the excitonic continuum tice constants apart, see Eq. (B17) in Appendix. As a 2 has maximum intensity Ωe(T ) = ωe /γe, Eq. (2). The blue line reminder, for each individual component, the frequency is a linear ﬁt to the Ωe(T ) data above Tc . The dashed lines in- and HWHM are proportional to qi; the light-scattering dicate transition temperature Tc and bare excitonic transition √ ex vertex and coupling are proportional to qi. temperature Tc .

E. The fitting results for Ta2NiSe5 on cooling below Tc . The temperature dependence of the coupling strength is influenced mainly by two factors: the The fits to the data, as well as the phononic and ex- screening effect of free carriers, reduced below Tc due to citonic components, are shown in Fig.6. For the 300 K the emergence of a pronounced spectral gap [23, 55], and and 265 K spectra below Tc we also include the acoustic the change of the crystal structure below Tc. contribution due to coupling via quasi-periodic structure The difference in magnitude of the exciton-phonon cou- of domain walls. In Fig.8 we show the acoustic contribu- (1,2) (3) pling for B and B modes can be readily understood tion at 300 K. The coupling of the excitonic continuum 2g 2g from the corresponding displacement patterns obtained to the acoustic components enhances the low-energy re- 1 from the DFT calculations for Ta2NiSe5 and shown in sponse. The parameter β = 7.7 meV A˚ 2 is consistent Fig. 11. The calculated patterns are consistent with those with Eq. (10) for Tc . (1,2) The spectral parameters: frequency, FWHM and in- reported in other studies [20, 52]. While both the B2g (3) tegrated intensity, – of the three B2g phonon modes are modes involve displacements of Ta and Se, the B2g mode shown in SubSection.VIB. The rest of the fitting param- involve a displacement of Se almost exclusively (the Ni eters are given in Fig. 10. atoms are at the inversion centers and thus do not con- The temperature dependence of the coupling strength tribute to the Raman-active phonon modes). As the elec- between the individual phonon modes and the excitonic tronic bands in Ta2NiSe5 close to the Fermi level are be- continuum are detailed in Fig. 10(a). The ratios of the lieved to be predominantly formed by Ta and Ni elec- (1) coupling strength to the phonon frequency for the B2g (2) and B2g modes above Tc are 0.32 and -0.34, respectively. Se B(1) B(2) B(3) 2g 2g 2g These ratios are an order of magnitude larger than the Ta typical values for stable systems with similar phonon fre- Ni quency [47, 53, 54]. On the contrary, the exciton-phonon (3) interaction with the B2g mode is weak. The signs of the (1) (2) coupling for the B2g and B2g modes are opposite. For these two modes, the magnitude of coupling is tempera- FIG. 11. The calculated vibrational patterns corresponding to the three B2g-symmetry phonon modes of Ta2NiSe5. ture independent above Tc , but decreases and saturates 11

Ta2Ni(Se0.75S0.25)5 Ta2Ni(Se0.33S0.67)5 trons [12, 18, 19], with much smaller contribution of Se, � 4 (a) (c) (3) � 2 it appears natural that the B2g mode does not couple ) to the low-energy electronic degrees of freedom. Further- ) � 0 meV �� ( ( i � -� -2 � more, the vibration of the Ta atoms for B(1) and B(2) v 2g 2g -� -4

displacements are in anti-phase, which can explain the -� -6 � �� 0 50 100 150 200 250 300 350 �� opposite signs of the exciton-phonon coupling for these � (b) �� (�) 9 (d) Temperature (K) �� ) modes. � ) ) �� 8 ) units

. �� The temperature dependence of the light-scattering �� ( -400K ( � � � �� arb

( 7 ( Ω Ω � e � � t vertex te and the frequency Ωe at which the continuum � has maximum intensity are shown in Fig. 10(b). Above � 55K 6 � � � �� 0 50 100 150 200 250 300 350 Tc , the quantity Ωe linearly decreases on cooling; below �� (�) Temperature (K) Tc , it rapidly increases and saturates at low temperature. FIG. 13. Temperature dependence of the Fano fitting parameters for the ac Raman spectra of Ta2Ni(Se0.75S0.25)5 (a-b) F. The fitting results for Ta2Ni(Se1−xSx)5 with x = and Ta2Ni(Se0.33S0.67)5 (c-d). (a,c) The coupling strength vi 0.25 and 0.67 (i=1,2,3) in Eq. (B4). (b,d) the light-scattering vertex te, and the energy at which the excitonic continuum has maximum intensity Ω = ω2/γ of the overdamped electronic mode, To compare with the results for Ta2NiSe5, we also fit e e e the ac polarization spectra for the alloy compositions (x Eq. (B6). The blue line is a linear fit to the Ωe data. = 0.25 and 0.67) above their transition temperature. We are not able to perform a Fano analysis below T for two c 2 reasons: (a) we have no knowledge of the domain struc- mum intensity, Ωe = ωe /γe, decreases linearly on cooling ture and the sound velocity; and (b) we cannot prop- above the transition temperature. Extrapolating to zero value of Ω , we obtain 55 ± 18 K for Ta Ni(Se S ) erly subtract the leakage of the Ag modes. In Fig. 12 we e 2 0.75 0.25 5 and −400 ± 70 K for Ta Ni(Se S ) . show one characteristic Fano fit for Ta2Ni(Se0.75S0.25)5 2 0.33 0.67 5 and Ta2Ni(Se0.33S0.67)5, respectively. The fitting param- In Table.IV we present the doping dependence of eters are given in Fig. 13. the relevant physical quantities above the transition The results are similar to the case of Ta2NiSe5: for the temperature for Ta2Ni(Se1−xSx)5 family. Because the coupling strength, we find positive v1, negative v2, and coupling strength increases with sulfur doping, deter- negligible v3; the light-scattering vertex te has no tem- mining the intrinsic phonon parameters, especially the perature dependence above the transition temperature; linewidth, becomes more difficult for Ta2Ni(Se0.75S0.25)5 the energy at which the excitonic continuum has maxi- and Ta2Ni(Se0.33S0.67)5.

(a) 345K Ta2Ni(Se0.75S0.25)5 VI. TEMPERATURE DEPENDENCE OF THE 25 0.19meV INTRINSIC PHONON PARAMETERS

) 20 units . 15 In this section we present the temperature dependence arb (

'' 10 of intrinsic phonon-mode parameters: energies, intensi- χ ties and linewidths. The results for B -symmetry modes 5 2g are given in SubSec.VIA, and those for A g-symmetry 0 modes are given in SubSec.VIB. (b) 310K Raman shift (TameV2Ni(Se) 0.33S0.67)5 ��

) �� TABLE IV. The doping dependence of the scattering ver- �� tex and the coupling above the transition temperature for �� (

�� the interaction between the excitonic continuum and phonon χ modes in the B2g scattering geometry of Ta2Ni(Se1−xSx)5 � family. The quantities te is the vertex of light scattering pro- � � � �� cess for the excitonic continuum. The quantities vi (i=1,2) �� (��) are the coupling between the excitonic continuum and the (i) B2g phonon mode. FIG. 12. Raman response χ00, represented by black dots, in the ac scattering geometry for Ta2Ni(Se0.75S0.25)5 and x=0 x=0.25 x=0.67 Ta2Ni(Se0.33S0.67)5 with the Fano ﬁts [Eq. (B2)] shown as te (arb. units) 7.22 7.36 7.48 red curves. The spectral resolution is 0.19 meV. The phonon v1 (meV) 2.45 2.61 3.61 modes [Eq. (1)] and excitonic continuum [Eq. (2)] are repre- v (meV) -4.03 -4.61 -5.87 sented by green and blue curves, respectively. 2 12

A. B2g-symmetry Phonon Modes above Tc suggests the importance of the interactions beyond that model, i.e. nonlinear ones.

1. Ta2NiSe5 (1) More noticeable is that the frequencies of the B2g and B(2) modes exhibit a large increase on cooling from In Fig. 14 we show the temperature dependence of the 2g around 350 K to T . The frequency of the B(3) mode, spectral parameters for B2g-symmetry phonon modes in c 2g (1) Ta2NiSe5: the bare phonon frequency, FWHM, and in- however, does not show such anomaly. Only B2g and tegrated intensity. (2) B modes exhibit this anomaly; interestingly (1) they Below T , the temperature dependence of both fre- 2g c are allowed to couple to interband scattering by sym- quency ω (T ) and FWHM Γ (T ) = 2γ (T ) of the phonon p p p metry selection rules and (2) their corresponding vibra- modes can be accounted for by standard model assum- tion involve motion of Ni atoms and hence they couple ing anharmonic decay into two phonons with identical (3) frequencies and opposite momenta [56]: to the electronic bands near Fermi level. Although B2g mode can also couple to the interband scattering, its vi- 2 brational pattern almost does not contain motion of Ni ωp(T ) = ω0 − ω2[1 + ], (16) e~ω0/2kB T − 1 atoms. (1) (3) As for the integrated intensity, B2g and B2g modes and have around 2-fold increase of intensity on cooling below (2) 2 Tc , while B2g mode shows temperature-independent in- Γp(T ) = Γ0 + Γ2[1 + ]. (17) e~ω0/2kB T − 1 tensity. Two factors could influence the intensity. First, the interaction-induced gap opening up below Tc should We note that a low value of Γ0 indicated high quality of play a major role. The system gradually changes from a the crystals. semimetal at high temperature to an insulator at low Above Tc , however, the slope of the FWHM in- temperature. The screening effect, which reduces the creases for the three phonon modes, and the FWHM light-scattering vertex, and in turn, the intensity for becomes larger than the value predicted by the anhar- phonon modes, is suppressed on cooling. This factor monic decay model. The appearance of additional decay therefore favors increase of intensity on cooling. Second, channels above Tc is related to the presence of gapless the structural change below Tc could play also a role. The particle-hole pairs. Indeed, above Tc Ta2NiSe5 is gap- ion positions are shifted within the unit cell below Tc , less spectroscopically[23], while below Tc a gap rapidly and the vibrational patterns of the three B2g modes are develops at low energies, suppressing the damping due modified. Therefore, the polarizability induced by lattice to particle-hole pairs. Because the Fano model used for vibrations, which is proportional to the phonon inten- fitting takes into account the damping due to exciton- (2) sity, also change with temperature. The fact that B2g phonon interaction, existence of additional damping mode shows temperature-independent intensity might be ) ) related to its unique vibrational pattern. �� ( ��

328K ( 328K (a) �� (b) �� B(1) 2g �� ) ) �� ( ( �� ) ) �� 2. The alloy compositions (x=0.25, 0.67) �� ( ��

( � � �� (�) (c) �� (�) (d) ) (2) ) �� In Fig. 15 and 16 we show the temperature de- ��

B �� 2g �� ( ( �� pendence of the B2g-mode spectral parameters for

�� ) �� ) �� Ta Ni(Se S ) and Ta Ni(Se S ) , respec- Energy (meV) Energy FWHM (meV) �� 2 0.75 0.25 5 2 0.33 0.67 5 �� ( �� ( � tively. Although we do not perform Fano analysis for � �� (e) (f) �� (3) (�) �� (�) �� B g �� the data below Tc , we use Lorentzian lineshape to ﬁt

) 2 �� )

�� (1) �� ( ( the B mode at low-enough temperatures, at which the �� 2g Integrated Intensity (ac Geometry) (arb. units) �� Integrated Intensity (aa Geometry) (arb. units) �� (2) (3)

�� lineshape is essentially symmetric. For the B and B �� 2g 2g �� modes, because they are not well separated from the leak- �� (�) �� (�) age of Ag modes, it is diﬃcult to reliably obtain their �� spectral parameters. FIG. 14. Temperature dependence of the spectral parameters: the bare frequency, FWHM, and the integrated intensity, For the alloy compositions, the increase of the FWHM – for the B2g-symmetry phonon modes of Ta2NiSe5. For each slope above Tc is not as strong as in the case of Ta2NiSe5. mode, the left panel presents the frequency and FWHM; and Moreover, although for Ta2NiSe5 the large frequency in- the right panel presents the integrated intensity in the allowed (1) crease of the B2g mode on cooling happens in a 20 K and ’forbidden’ scattering geometries. The solid lines repre- energy range, the frequency increase for the alloy com- sent the ﬁts to the anharmonic decay model [Eqs. (16-17)]. positions happens in a much larger energy range. 13

260K 260K 8.8 1.2 250 (a) (1) (b) �� (a) 0.19meV ) B ) 700 ) (1) 2g 1.0 200 ) 8.6 ) B units units g .

. 0.06meV 0.8 600 2 meV meV 150 ( ( arb 8.4 arb �� ( ( 0.6 500 100 8.2 FWHM Energy

0.4 �� Intensity 400 50 Intensity ��

8.0 )( 0.2 0 0 50 100 150 200 250 300 350 ω 0 50 100 150 200 250 300 350 ( 1.2 (c) (d) �� Temperature (K) Temperature (K) �� B(2) 300 χ

14.0 g )

) 2 1.0 ) units meV meV . ( ( � 0.8 250

13.5 arb ( � � � � � FWHM Energy

0.6 Area 200 �� (��) FWHM (meV) �� Energy (meV) Energy 13.0 (b) (2) 0.4 B 0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350 ) 2g (e) (f) Temperature (K) �� 19.2 B(Temperature3) (K) 80

g 2.0 ) )

2 ) 60 19.0 units meV meV . ( ( �� arb

1.5 �� Integrated Intensity (ac Geometry) (arb. units) Integrated Intensity (aa Geometry) (arb. units) ( 18.8 40 ( �� FWHM Energy Area χ 1.0 �� 18.6 20

0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350 Temperature (K) Temperature (K) � �� (c) �� (��) FIG. 15. Temperature dependence of the spectral param- ) B(3) eters: frequency, FWHM, and integrated intensity, – for the 2g �� B2g-symmetry phonon modes of Ta2Ni(Se0.75S0.25)5. For each

mode, the left panel presents the energy and FWHM; the right �� )(

ω ��

panel presents the integrated intensity in the allowed and ’for- ( �� bidden’ scattering geometries. χ � �� 170K 170K �� (��) 8.7 (a) (1) (b) B 0.9 200 ) 2g ) 500 ) 8.6 0.8 ) units units 150 . .

meV 480 meV ( ( arb 8.5 arb ( 0.7 ( 100 FIG. 17. Temperature dependence of B2g phonons in the ac 8.4 460 FWHM Energy 0.6 50 scattering geometry for Ta2NiS5. The spectral resolution is Intensity 8.3 Intensity 0.5 440 0 0.19 meV for the 315 K data, and 0.06 meV for the other data. 0 50 100 150 200 250 300 0 50 100 150 200 250 300 (c) (d) 14.8 Temperature(2) (K) 1.2 280 Temperature (K) B g 2 ) ) ) 260

14.6 1.0 units meV meV . ( ( 240 arb ( 14.4 0.8 220 FWHM Energy Area FWHM (meV) Energy (meV) Energy 14.2 0.6 200 (2) 0 50 100 150 200 250 300 0 50 100 150 200 250 300 B modes show softening behavior on cooling. (e) 15 (f) Temperature (K) 2g 21.0 BTemperature(3) (K) 1.0 2g ) ) 20.9 ) 10

0.8 units meV meV . ( 20.8 (

arb In Fig. 18 we show the temperature dependence of the ( 0.6 Integrated Intensity (ac Geometry) (arb. units) Integrated Intensity (aa Geometry) (arb. units) 5

20.7 FWHM Area Energy spectral parameters for the B2g-symmetry phonon modes 20.6 0.4 0 for Ta2NiS5: the frequency, FWHM, and the integrated 0 50 100 150 200 250 300 0 50 100 150 200 250 300 Temperature (K) Temperature (K) intensity. These spectral parameters are obtained by ﬁt- ting the measured spectral features with Lorentzian line- FIG. 16. Temperature dependence of the spectral param- shapes. eters: frequency, FWHM, and integrated intensity, – for the B -symmetry phonon modes of Ta Ni(Se S ) . For each 2g 2 0.33 0.67 5 The behavior of the B2g-symmetry modes is not consis- mode, the left panel presents the energy and FWHM; the right (1) (2) panel presents the integrated intensity in the allowed and ’for- tent with the anharmonic decay model: for B2g and B2g bidden’ scattering geometries. modes, the frequency anomalously decreases on cooling; (3) for B2g mode, the decrease of FWHM on cooling is too steep to be accounted by the anharmonic decay model.

3. Ta2NiS5 Hence, we suggest that there is a change in the phonon self energy, which must affect the the apparent mode fre- (1) (2) Ta2NiS5 is a semiconductor that, in contrast to quency. For the B2g and B2g modes, whose frequency Ta2NiSe5 , does not show signatures of an excitonic is below 30 meV, the energy decreases on cooling; for the (3) insulator like the flattening of valence band disper- B2g mode, whose frequency is above 30 meV, the energy sion [21, 57]. Consistent with its semiconductor nature, increases on cooling. we observe no excitonic continuum and in turn no asymmetric lineshape for the phonon modes, Fig.2(c-d). In (2) The integrated intensity of B2g mode is temperature- Fig. 17 we zoom in on the temperature dependence of independent, while that of the other modes increases on the phonons in ac scattering geometry. The three B2g- cooling. However, different from the case of Ta2NiSe5, symmetry phonon modes exhibit conventional Lorentzian in which the increase of the intensity happens below Tc , lineshapes, and the linewidth has almost 4-fold decrease the intensity increase of the Ta2NiS5 modes is through (1) on cooling from 315 K to 35 K. Moreover, the B2g and the whole measured temperature range. 14 ) 120K 120K ) (b) (a) (1) �� ) 30 B �� . �� g ( u �� 2 ( . ) )

� a 25

�� ( ' �� ( (

�� ω �� 20 �� ' �� ω �� ' 15 �� ω '' � aa 10 � �� χ �� (d) (c) ��(2) (�) �� (�) ω B 0 �� g �� 5

2 ) ) ) �� ( ( 0 �� 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 ( ��

�� Raman Shift (eV) Energy (meV) Energy �� FWHM (meV) �� 00 0 � �� R ω χaa(ω ) 0 (e) �� (f) �� (3) (�) �� (�) FIG. 19. The integral Iaa(ω) = 0 dω as a function B g �� 0 ω

2 ) ) ) �� of the Raman shift ω for Ta2NiSe5 in aa scattering geometry. �� ( �� ( Integrated Intensity (ac Geometry) (arb. units) Integrated Intensity (aa Geometry) (arb. units) ��

( �� (Fig. 19). In the limit ω → ∞ this integral is propor- � �� (�) �� (�) tional to the static susceptibility in the aa scattering geometry, which is expected to be approximately constant FIG. 18. Temperature dependence of the spectral param- as a function of temperature since there is no instability eters: frequency, FWHM, and integrated intensity, – for the in Ag channel. On cooling, the phonon intensity is en- B2g-symmetry phonon modes of Ta2NiS5. For each mode, the hanced [Fig. 21], while the electronic continuum is sup- left panel presents the energy and FWHM; the right panel pressed [Fig.2(a)]. However, the integral Iaa is essentially presents the integrated intensity in the allowed and ’forbid- temperature independent at 70 meV. This conservation den’ scattering geometries. implies that the enhancement of the phonon intensity is balanced by the reduction of the electronic intensity. Note that these effects occur at temperatures below Tc, B. Ag-symmetry phonon modes where the continuum in B2g symmetry is strongly suppressed, indicating the opening of a gap. On the other In this subsection we discuss the properties of the full- hand, strong correlation effects have been shown to lead symmetric phonon modes; the relevant results are shown to a non-zero intensity within the gap [23]. Thus, the pe- in Fig. 19 with respect to the overall spectral weight dis- culiar balance between the electronic and phononic contribution in the Ag channel, and in Figs. 20 and 21 regard- tributions at low energies implies an unconventional cou- ing the spectral parameters of the individual Ag modes. pling of the electronic modes to the Ag phonons in the In Fig. 21 we compare the temperature dependence of correlated excitonic insulator state. the spectral parameters (frequency, FWHM, and inte- For comparison, in Fig. 20 we show the temperature de- grated intensity) of the Ag-symmetry phonon modes for (1) pendence of the spectral parameters for the Ag mode for Ta2NiSe5 and Ta2NiS5 crystals. The temperature depen- Ta2Ni(Se1−xSx)5 with x = 0.25 and 0.67. Because of the dence of both frequency and FWHM above Tc for these difficulty caused by broad lineshape and two-frequency modes can be accounted by the anharmonic decay model behavior of the phonon modes for alloy compositions, [Eq. (16-17)]. (1) only the lowest-frequency Ag mode, which are well sep- The FWHM of the Ag-symmetry modes (except for (3) (8)

Ag and Ag ) for Ta NiSe exhibit an anomalous in- ) 2 5 ) 260K 260K �� crease above the transition temperature, which we at- �� ( �� ( ) ) �� tribute to enhanced electron-phonon scattering rate in �� ( ( its semimetal phase. However, the modes of Ta NiS �� 2 5 �� show no anomaly of FWHM, because it is a semiconduc- �� (a) x=0.25 �� (b) x=0.25 ) ) � � �� tor with a direct gap observed throughout the measured 170K �� 170K �� (�) �� (�) �� Energy (meV) Energy �� ( FWHM (meV)

temperature range. ( ) ) � �� ( The intensity of most modes has more than 2-fold in- ( �

�� crease on cooling, with a few exceptions: for Ta2NiSe5, �� (1) Integrated Intensity (aa Geometry) (arb. units) Integrated Intensity (ac Geometry) (arb. units) �� (c) x=0.67 (d) x=0.67 � the intensity of the Ag mode is independent of tem- � �� (2) �� (�) �� (�) �� perature, while the intensity of the Ag phonon mode decreases on cooling; for Ta2NiS5, the intensities of the (1) (2) FIG. 20. Temperature dependence of the spectral param- Ag and Ag modes are temperature independent. eters: frequency, FWHM, and integrated intensity, – for the (1) The enhancement of intensity on cooling in the Ag phonon mode of Ta2Ni(Se1−xSx)5 with x = 0.25 (a-b) semimetallic samples could in principle be related to the and 0.67 (c-d). For each sample, the left panel presents the change of electronic structure (less screening eﬀect) be- energy and FWHM; the right panel presents the integrated low Tc. However, an interesting insight can be further ob- intensity. The solid lines represent the ﬁts to the anharmonic 00 0 R ω χaa(ω ) 0 decay model [Eqs. (16-17)]. tained by computing the integral Iaa(ω) = 0 ω0 dω 15 ) ) Ta2NiSe5 Ta2NiS5 ) ) �� ( ��

328K ( 328K 120K 120K �� (1) �� (1) ��

A A ( g g �� ( ) ) ) �� ) �� ( ( ( ( ��

�� ) ) �� (

( � ��

�� (�) �� (�) �� (�) ( ) (2) �� Ag �� (2)

A )

) �� ) ) g ) ��

��

( �� ( ( �� ( �� ( ) �� ) ��

�� ) )

�� (

( � � �� (3) (�) �� (�) �� (3) (�) �� (�)

A ��

�� g A ( �� g �� (

�� ) ) ) ) ��

�� ( (

( �� ( ��

) �� ) � ��

�� ( ��

( � � � �� (4) (�) �� (�) �� (�) �� (�) Ag �� A(4) �� )

�� ) g ) ) ) ��

�� ) ( )

�� ( ( (

�� ( �� (

( �� (�) �� (�) �� (�) ��(5) (�) �� A �� (5) g �� A ��

g ) ) ) �� ) ) �� Energy (meV) Energy (meV) Energy FWHM (meV) �� FWHM (meV) �� ) ( ( ( ( ) ��

�� ( ��

��

�� (

�� ( �� (�) �� (�) �� (�) �� (�) (6) �� (6) ��

Integrated Intensity (aa Geometry) (arb. units) Integrated Intensity (ac Geometry) (arb. units) A Integrated Intensity (aa Geometry) (arb. units) Integrated Intensity (ac Geometry) (arb. units) �� Ag �� g ) ) ) ) ) �� ( (

�� ( ( ��

( ��

�� ) �� ) ��

� �� ( � �� ( � �� (�) �� (�) �� (�) �� (�) (7) �� Ag �� (7) �� Ag ) ) ) ) �� ) �� ( ( ( �� ( �� ( �� ) �� ) ��

� �� ( � �� ( � �� (�) �� (�) �� (�) �� (�) �� (8) �� (8) �� A �� Ag

g ) ) �� ) ) ) ��

�� ( ( ( �� ( ��

�� ( ��

�� (�) �� (�) �� (�) �� (�) ��

FIG. 21. Temperature dependence of the spectral parameters: frequency, FWHM, and integrated intensity, – for the Ag- symmetry phonon modes for Ta2NiSe5 and Ta2NiS5. For each mode, the left panel presents the energy and FWHM; the right panel presents the integrated intensity. The solid lines represent the ﬁts to the anharmonic decay model [Eqs. (16-17)].

arated from other modes in frequency, renders reliable VII. RELATION TO TIME-RESOLVED ﬁtting results. For Ta2Ni(Se0.75S0.25)5, some linewidth EXPERIMENTS broadening is observed above Tc , which is weaker than for Ta2NiSe5. However, for Ta2Ni(Se0.33S0.67)5 almost no broadening is observed. In this section we convert Raman response from frequency domain to time domain, and discuss relevant time-resolved studies on Ta2NiSe5.

We ﬁrst discuss the appearance of B2g-symmetry excitations in the time domain, obtained by inverse Fourier transform of the Raman response, see Fig. 22. Above the 16

�� (a) 380K �� (e) 35K (a) 380K (c) 35K �� ) ) ) ) �� ( ( �� ( �� ( �� χ χ χ χ � � ��

� � � � � � �� (��) �� (��) �� (��) �� (��)

(b) (f) � (b) � (d) ) ) �� ) ) � � �� ( ( �� ( � ( �

-�� -�� -� -� -� -� �� -�� -�� -� -� � � � � � � � � � � � � (c) (g) � � � � � �� (��) �� (��) ) �� ) �� (��) �� (��)

�� ( �� ( �� FIG. 23. Time-domain signal for the Ag-symmetry exci-

-�� -�� tations of Ta2NiSe5. (a) The Raman response for Ta2NiSe5 �� -�� -�� measured in aa geometry at 380 K. The time-domain signal, obtained by inverse Fourier transform of the data, is shown � � � � � � � � � � � � (d) (h) �� (��) �� (��) in (b). (c) The Raman response for Ta2NiSe5 measured in aa ) �� ) �� geometry at 35 K. The corresponding time-domain signal is �� shown in (d). �� ( �� ( ��

-�� -�� -�� -�� very early time scales. � � � � � � � � � � � � �� (��) �� (��) Below the transition temperature, the energy at which the continuum has maximum response moves to higher

FIG. 22. Time-domain signal for the B2g-symmetry exci- energy, and the phonon-exciton coupling strength is re- tations of Ta2NiSe5. (a) The Raman response for Ta2NiSe5 duced. Consequently, the interference effect is suppressed measured in ac geometry at 380 K. The Fano fit [Eq. (B1)] and the combined response is essentially the same as the is shown as the red curve; the bare phonon modes [Eq. (1)] bare phononic response [Fig. 22(f-g)]. The bare excitonic are shown by the green curve; the bare excitonic continuum response still has a pure relaxational time dependence, [Eq. (2)] is shown by the blue curve. The time-domain signal with very short lifetime [Fig. 22(d) and (h)]. corresponding to the Fano fit, bare phonon modes, and bare For comparison, in Fig. 23 we present the time-domain excitonic continuum, obtained by inverse Fourier transform, signal for the A -symmetry excitations. Above the tran- are shown in (b), (c), and (d), respectively. (e) The Raman g sition temperature, although multiple oscillations are si- response for Ta2NiSe5 measured in ac geometry at 35 K. The corresponding time-domain signals are shown in (f), (g), and multaneously present at short time scale, beyond 10 ps (h), respectively. the time-domain signal is dominated by the oscillation (1) of 1 THz [Fig. 23(b)], corresponding to the Ag phonon mode whose spectral width is much smaller than oth- transition temperature, the phonon-exciton interaction ers [Fig. 23(a)]. At low temperature, the difference significantly broadens the spectral features [Fig. 22(a)]; between the spectral widths of various modes is re- as a result the deduced time-resolved response decays duced [Fig. 23(c)]; hence, these modes have comparable fast and essentially dies out before 5 ps [Fig. 22(b)]. For lifetime and multiple oscillations survive beyond 10 ps the bare phononic response, the time-domain signal be- [Fig. 23(d)]. yond 4 ps is dominated by the oscillation of 2 THz mode In relation to the ultra-fast studies of Ta2NiSe5 [15, 17, (1) 58, 59], the Raman results are consistent with the ultra- [Fig. 22(c)], corresponding to the B2g phonon. The signal of the bare excitonic response shows a pure relaxational fast data under low fluence. One ultra-fast work [17] pro- (1) behavior [Fig. 22(d)]. Comparing Fig.22(b) and (c), we vides evidence for coupling between the Ag mode and note that it is difficult to identify the Fano interference the amplitude mode of the condensate under high-fluence feature from time-domain signal, because such interfer- pumping. We note that in our studies we can unam- ence exhibits no distinct characters in the time domain, biguously identify the amplitude mode with the excitonic except for that the oscillations are strongly damped. In- continuum we observe. Above the transition tempera- deed, in ultrafast studies, the interference nature is not ture, the overdamped excitonic mode softens on cooling revealed even after Fourier transform of the time-domain towards Tc ; just below the transition temperature, its data to the frequency domain [16, 17, 20]. The likely rea- energy increases on further cooling. Such temperature son for that is the high pump fluence used, causing the dependence of mode energy is characteristic of an ampli- exciton and phonon responses decouple already on the tude mode while the optical B2g phonons only harden on 17

�� symmetry breaking at large x, demonstrated by the de-

) �� ) �� crease of phonon intensity in the ’forbidden’ scattering �� ( geometry. � �� Ω

�� ( �� (�) For x < 0.7, the two lowest-frequency ac-quadrupole- (1) (2) symmetry B2g and B2g phonon modes show strongly

�� asymmetric lineshapes at high temperatures, which is �� indicative of coupling between the phonons and an exci- � �� tonic continuum of the same symmetry [23, 24]. Within �� (��) the framework of extended Fano model, we develop a quantitative description of the observed lineshapes, en- FIG. 24. Time-domain signal for the excitonic continuum of abling us to disentangle the excitonic and phononic con- Ta2NiSe5 above and below the transition temperature, plot- tributions to the spectra, to derive the intrinsic phonon ted in semi-log scale. The data above Tc are dashed for clarity. parameters and determine the exciton-phonon interac- The relaxation time starts to decrease just below Tc . Inset: tion strength, that affects the transition temperature temperature dependence of the energy at which the excitonic continuum has maximum intensity, Ω (T ). Tc(x)[24]. The displacement patterns obtained from e ab-initio calculations explain the trends in the deduced exciton-phonon coupling values. At T < Tc the rem- nant excitonic continuum demonstrates signatures of cooling. In Fig. 24 we present the time-domain signal cor- coupling to the finite-momentum B -symmetry acous- responding to the excitonic mode around the transition 2g tic phonons, allowed due to scattering on a quasi-periodic temperature. structural of domain walls. We have also shown that the Additionally, a mode associated with the phase of coupling to the excitonic continuum explains the acoustic the excitonic order parameter may exist. The electron- mode softening observed in [24, 52]. phonon coupling and exchange interactions modify the otherwise sombrero-shape free-energy landscape, reduc- ing the continuous U(1) symmetry to a discrete Z2 sym- The intrinsic parameters of the optical phonons for metry, leading to a finite energy of the phase mode. A Ta NiSe and Ta NiS at low temperatures are mostly in recent pump-probe microscopy study suggests that the 2 5 2 5 (1) good agreement with anharmonic decay model and DFT phase-mode energy is smaller than the Ag -mode energy calculations. For alloy compositions a two-mode behav- (around 4 meV) [58]. However, we do not observe any ior is found for most modes, where signatures appear at mode down to 0.4 meV at low temperature [Fig. 22(e)]. two frequencies, corresponding to the ones in Ta2NiSe5 Furthermore, the phase oscillations of the order parame- and Ta2NiS5. However, several types of anomalous be- ter should harden above Tc, which would have manifested havior have been observed in the temperature dependen- itself in the low-energy range of the spectra. Such sig- cies. For x < 0.7, the B(1) and B(2) modes anomalously natures are not observed, either [Fig.6]. Therefore, ex- 2g 2g harden close to T (e.g., Fig. 14), indicating an interaction istence of the phase mode below 4 meV is not supported c with continuum beyond Fano model description [23]. For by the Raman data. (1) (2) Ta2NiS5 (Fig. 18) the B2g and B2g modes do not show Fano shapes, but the frequencies of these modes anomalously soften on cooling, although never going critical. Fi- VIII. CONCLUSIONS nally, the intensity of the most modes is strongly temperature dependent. Interestingly, for Ta2NiSe5 we observe We have employed polarization resolved Raman spec- that the sum of electronic and phononic contributions to troscopy to conduct a systematic spectroscopic study of the aa static susceptibility is conserved (Fig. 19), point- the lattice dynamics in Ta2Ni(Se1−xSx)5 (x = 0, ..., 1) ing to an unexpected electron-phonon coupling mecha- family of the excitonic insulators. nism within the excitonic insulator state. We identify and classify by symmetry all the Ra- man active phonon modes of Ag and B2g symmetries. A change in selection rules is detected at temperature In addition, based on our results we have provided an Tc(x), indicating the orthorhombic-to-monoclinic struc- interpretation of recent time-resolved pump-probe exper- tural phase transition related to the excitonic insulator iments and discussed the signatures expected from the state [23, 24]. We find that the symmetry breaking tran- modes we have observed, see Figs. 22, 23 and 24. Over- sition persists for entire Ta2Ni(Se1−xSx)5 family with all, this work provides a comprehensive study lattice dy- Tc(x) monotonically decreasing from 328 K for x = 0 to namics in Ta2Ni(Se1−xSx)5; more generally, the uncon- 120 K for x = 1. Its signatures in the resistivity data, ventional behaviors we observed point to the importance however, become weak or undetectable for large sulfur of the effects of electron-phonon coupling in correlated concentration x that we attribute to the weakness of the semimetals. 18

ACKNOWLEDGMENTS �� (a) TE=295K P=8mW ) M.Y. and P.A.V. contributed equally to this work. We �� acknowledge discussions with K. Haule. We are grate- 0.19meV

ful to Y. Kauﬀmann for help with TEM measurements. �� ( The spectroscopic work conducted at Rutgers was sup- � �� ported by NSF Grant No. DMR-1709161 (M.Y. and � G.B). P.A.V. acknowledges the Postdoctoral Fellowship -�� -�� support from the Rutgers University Center for Materials �� (��) Theory. The sample growth and characterization work �� (b)

conducted at the Technion was supported by the Israel ) �� Science Foundation Grant No. 320/17 (H.L., I.F. and A.K.). H.L. was supported in part by a PBC fellowship �� (

of the Israel Council for Higher Education. The work at �� NICPB was supported by the Estonian Research Council χ �� Grant No. PRG736 an by the European Research Coun- � cil (ERC) under Grant Agreement No. 885413. M.K. � � �� was supported by NSF DMREF grant DMR-1629059. �� (��) �� (c)

Appendix A: Estimation of heating in excitation ��

laser spot ) �

( �� We use three methods to estimate the heating rate, a �� measure of the temperature increase per unit laser power �� in the focused laser spot (K/mW): (i) Stokes/anti-Stokes � �� Raman scattering intensity ratio analysis; (ii) monitoring �� (��) laser power that is inducing the phase transition; and (iii) a thermoconductivity model calculation. We use data for FIG. 25. Stokes-Anti-Stokes analysis of the ac spectra for Ta NiSe as an example to illustrate these methods. 2 5 Ta NiSe . (a) The Stokes and Anti-Stokes cross sections mea- For the first method, we note that the Stokes scattering 2 5 sured at environmental temperature TE = 295 K with laser cross section IS and Anti-Stokes cross section IAS are power P = 8 mW. (b) The Raman response calculated from related by the detailed balance principle [22] the measured spectra in (a). The laser-spot temperature, which appears in the Bose factor n, is 307 K. The spectral nIS(ω) = (n + 1)IAS(ω) , (A1) resolution is 0.19 meV for panels (a-b). (c) The laser-power dependence of the laser-spot temperature. The straight line in which n stands for the Bose factor represents a linear fit. 1 n(ω, T ) = , (A2) exp(~ω/kBT ) − 1 the temperature at the laser spot being 307 K. We use where ~ is the reduced Planck’s constant, ω is frequency, Eq. (A4) with the phonon intensity integrated from 7.5 kB is the Boltzmann’s constant, and T is the temperature to 8.5 meV to calculate the temperature at the laser spot. in the laser spot. By a linear fit to the power dependence of the laser-spot Using Eq. (A1-A2), the temperature can be derived as temperature, we find the heating rate to be 1.29±0.17 K/ mW. ω T = ~ , (A3) For the second method, we gradually increase laser kB ln(IS/IAS) power at 295 K environmental temperature. We find that or, numerically, when the laser power is in the range of 26±4 mW, the domain stripes, which are visible across the sample sur- 11.605 ω face under laser illumination, disappear inside the laser T [K] = [meV ] . (A4) spot. Moreover, the temperature dependence of phonon ln(IS/IAS) width and intensity has a sudden change. We assume We studied the Stokes and Anti-Stokes cross section that at this laser power, the temperature at the laser spot relation for the ac scattering geometry at 295 K environ- reaches the transition temperature 328 K [8,9], yield- mental temperature with various laser power. In Fig. 25 ing the heating rate of 1.25±0.20 K/ mW. We note that we show the results measured with 8 mW laser power for Ta2NiS5, we do not observe domain stripes below its as an example. The Raman responses calculated from transition temperature 120 K. Its transition temperature Stokes and Anti-Stokes cross sections match well with is identified by the sudden change of phonon intensity, 19

S sample. Performing the integral one obtains S c b eff  r  l l l2 l2 l b √c c a b κ + κ + κ √la c √ c a l tP  κ ln l / κ + a ↔ c Sa a a a a lc T (0)−T0 ≈ √ . (A9) κbπlalc ∆T~1/r Qualitatively, the result can be understood as follows. Due to the anisotropic shape of the heated region, right below it most heat is transferred along the b axis. How- FIG. 26. The geometry of the heated volume. The lengths ever, the one-dimensional heat equation would result in eff la and lc are determined by the spot size, while lb is approxi- a linear solution T (y), depending on the cutoff scale lc . mated by the skin depth; the Sb is in the cleave plane facing It can be estimated from the condition of the heat flow the vacuum, while the other faces are in the bulk. Within the to the lateral direction being equal to the heat flow along region marked by dashed lines, the heat flow is mostly along b b. Approximating the temperature gradient along a, b, c axis, while outside the region heat flows in all directions com- as ∆T/l one gets the condition parably, such that the temperature increase above the base a,b,c temperature ∆T decays as 1/r, r being the distance from the ∆T ∆T ∆T heated region. 2leff l κ + 2leff l κ = l l κ , (A10) b a c l b c a l a c b eff c a lb see Fig. 18(b) for example. that results in the estimate For the third method, we consider a heated region s 2 2 shown in Fig. 26 of a rectangular shape, with the dimen- eff lalc κb lb = 2 2 . (A11) sions given by the beam spot size and the penetration 2laκc + 2lc κa depth. The static heat equation takes the form: Equating the total heat flow outside this region to the ∂2T ∂2T ∂2T −κ − κ − κ = P(r), input power one obtains the estimate x ∂x2 y ∂y2 z ∂z2 tP ∂T (r) (A5) ∆T ≈ . (A12) = 0; p 2 2 8κb(laκc + lc κa) ∂z y=0

∂T (x → ±∞, y → −∞, z → ±∞) = T0. Overall, one notices that the temperature increase scales with the linear size of the spot. The laser heating power where P(r) is the power density. We ignore the cooling R is then determined as ∆T/P ; for the actual estimate provided by the helium gas flow above the sample surface, we thus need to find the transmission coefficient t first. so that there is no heat flow at the y = 0 boundary, The transmission coefficient can be calculated from the while deep inside the bulk the temperature should reach complex index of refraction n by the relationship t = the base temperature T0. Equation (A5) can be solved 1 − |(n − 1)/(n + 1)|2: using Green’s function of the Laplace equation and image method to satisfy the first boundary condition. In the 4n t = 1 , (A13) latter, we extend the equation formally to y > 0 half- 2 2 (n1 + 1) + n2 space and add an ”image” power density in which n1 and n2 are the real and imaginary part of n. P(x, y, z)θ(−y) → P(x, y, z)θ(−y) + P(x, −y, z)θ(y). The complex index of refraction can be obtained from the (A6) complex dielectric constant by the relationship = n2: The solution is then given by: s s Z 0 0 0 √ 0 0 0 0 p 2 2 p 2 2 dx˜ dy˜ dz˜ P( κxx˜ , ...)θ(−y˜ ) +y ˜ → −y˜ 1 + 2 + 1 1 + 2 − 1 T (r)−T = , n1 = , n2 = , (A14) 0 4π |˜r − ˜r0| 2 2 (A7) √ √ √ where and are the real and imaginary part of . The where ˜r = (x/ κx, y/ κy, z/ κz). The solution decays 1 2 as 1/r at large distances and thus satisfies the second imaginary part 2 can be calculated from the real part of boundary condition of Eq. (A5). An analytical result can the optical conductivity σ1: be obtained for 60 tP 2 = σ1 , (A15) P(x, y, z) = θ(l /2−|x|)θ(l −|y|)θ(l /2−|z|) (A8) ω l l l a b c a b c −1 −1 −1 in which the unit of ω is cm and that of σ1 is Ω cm . 2 2 at r = 0 in the limit lb /κb la,c/κa,c, where P is the The polarization of the incoming light is along a-axis of laser power and t is the transmission coefficient of the the sample. Because the quantities 1 and σ1 are 8.13 and 20

Appendix B: The fitting model for the Fano TABLE V. The various parameters used in calculating the interference laser heating rate at 295 K. The transmission coefficient is 0.64. (1) (2) Above Tc , the B2g and B2g phonon modes of Quantity (unit) a-axis c-axis Ta2NiSe5 exhibit strongly asymmetric Fano lineshapes. κ (mWK−1cm−1) 208 57.4 To analyze the physics of this Fano interference features, l (10−3cm) 5 10 we propose a model describing three phonon modes individually coupled to broad excitonic continuum. The total Raman response is described in the following way: 2.47 Ω−1cm−1 respectively at the laser wavelength [55], χ00 ∼ =T T GT , (B1) we find t=0.64. where T T = ( T T t ) denotes the vertices for light scat- The experimentally measured thermal conductiv- ph e ity [60] at 295 K is κ = 208 mWK−1cm−1 and κ = tering process (the subscript ”T” denotes ”Transpose”), a c T 57.4 mWK−1cm−1. in which Tph = ( tp1 tp2 tp3 ). G comprises the Green’s functions for the interacting phononic and excitonic exci- The length scales l = 5×10−3 cm and l = 1×10−2 cm a c tations that can be obtained by solving the Dyson equa- is determined by the 50×100 µm2 laser spot. The length tion: lb is the skin depth, which is calculated from the imaginary part of the index of refraction n : −1 −1 2 G = (G0 − V ) . (B2)

1 In Eq. (B2) lb = , (A16) ! 2πωn2 G0 0 G = ph (B3) 0 0 −1 0 Ge in which the unit of ω is cm and that of lb is cm. At the −6 laser wavelength, n2=1.5, and we ﬁnd lb = 7 × 10 cm is the bare Green’s function and (70 nm). ! 0 V The known values for the variables in Eq. (A9) are sum- V = e−ph (B4) V T 0 marized in TableV. Because κb is unknown, we cannot e−ph use Eq. (A9) to calculate the laser heating rate. How- is the exciton-phonon interaction. Here the bare ever, if the heating rate is 1.29 K/ mW at 295 K, as de- phononic Green’s function termined from the Stokes/anti-Stokes analysis, the value −1 −1 for κb should be 1.38 mWK cm . 0 0 Gph = diag[Gpi] An estimate for the electronic contribution to thermal 1 1 conductivity κ(e) could be calculated from the electric = diag[−( − )] , (B5) resistivity ρ by virtue of Wiedemann-Franz law: ω − ωpi + iγpi ω + ωpi + iγpi correspond to the B(i)-symmetry phonon modes LT 2g κ(e) = , (A17) (i=1,2,3), ρ 1 Ge = 2 (B6) in which L = 2.44 × 10−5 mWΩK−2 is the Lorenz num- ωe /γe − iω ber. The resistivity along b axis at 295 K is ρb = 2.34 × −1 (e) −1 −1 10 Ωcm [61], and we ﬁnd κb = 0.0308 mWK cm . (e) �� The ratio of κb to κb is consistent with the ratios obtained along a and c axes [60]. Moreover, that κb κa,c �� is consistent with the quasi-2D structure of the sys- ) �� tem [62]. / �� (

To illustrate that the laser heating rate is strongly � �� temperature dependent, we use Eq. (A9) to calculate the heating rate as a function of temperature. The temper- �� ature dependence of κa and κc are taken from Ref. [60]. � �� We assume that the ratio of κb to κc is temperature independent, and ﬁx this ratio to be 1.38/57.4 = 2.40%. �� (�) In Fig. 27 we show the calculated heating rate. Because of such assumption, the laser heating rate at 295 K is FIG. 27. Temperature dependence of the laser heating rate the same as that determined from the Stokes/anti-Stokes R, calculated by Eq. (A9) with the thermal conductivity data analysis. taken from Ref. [60]. 21

T represents the excitonic continuum, and Ve−ph = Its light-scattering vertex ts(q) and coupling to the excitonic continuum vs(q) are both proportional to the ( v1 v2 v3 ) denotes exciton interaction strength with √ √ the corresponding phonons. For phononic equation, the square root of wavevector: ts = τs q and vs = βs q. The frequency ω and the HWHM γ are both propor- parameters ωpi and γpi have the meaning of the mode fre- s s quency and the half width at half maximum (HWHM), tional to the wavevector: ωs = csq and γs = rsq. After introducing this mode, Eqs. (B3-B4) extend to respectively. For the excitonic equation, ωe is the energy of the overdamped excitations and γe represents the  0  2 Gph 0 0 relaxation rate. The quantity Ωe = ωe /γe denotes the G0 =   , (B15) energy at which the excitonic continuum has maximum 0  0 Gs 0  intensity. 0 0 Ge The bare phononic and excitonic responses are   3 0 0 V X e−ph χ00(0) = =T T G0 T = t2 =G0 (B7) 0  √  p ph ph ph pi pi V =  0 0 βs q  , (B16) i=1 T √ Ve−ph βs q 0 and 0 and the vertex for light-scattering process becomes T T = 00(0) 2 0 χ = t =G . (B8) T √ e e e Tph τs q te . These two expressions are related to Eqsw. (1-2) in the Then the total response function containing coupling main text. to acoustic mode for domain walls i lattice constants The renormalized phononic and excitonic responses, apart is given by χ00 and χ00, as well as the interference term χ00 are cal- 0 p e int χ00 ∼ =T T G0T 0 . (B17) culated from the renormalized Green’s function G: i ! Due to the requirement of causality, the real part of Gph Ge−ph susceptibility should be an even function while the imag- G = T , (B9) Ge−ph Ge inary part should be an odd function. Therefore, the static Raman susceptibility is purely real. The total T where Ge−ph = ( G1e G2e G3e ) represents the interfer- static Raman susceptibility is given by ence between the phononic modes and the continuum. T The phononic term is calculated from the 3x3 phononic χ(ω = 0) ∼

in which finite linewidths of phonon modes are neglected. In Fig. 28 we show the excitonic continuum coupling The pole of this Green’s function is obtained by requiring (1) (2) with the B2g and B2g phonon modes in an individually the determinant of inverse G∗ to be zero: way to illustrate the effect of coupling. First we discuss 2 2 2 2 the renormalization effect. The renormalized phonon ω − csq βs q = − 2 . (B22) mode shifts in energy and broadens in lineshape. If we 2c q P3 2vi s Ωe − i=1 ωpi neglect the bare phonon width γp for simplicity, the cen- tral energy of the renormalized phonon mode, ωpv, can 2 2 2 Identifying ω asc ˜sq , in whichc ˜s represents the renor- be expressed as malized sound velocity above Tc , we have v2(v2 − 2ω Ω ) ω = ω + p e . (C2) 2β2c pv p 2 2 3 2 2 s s 2(v Ωe + ωpΩe + ωp) c˜s = cs − 2 . (B23) P3 2vi Ωe − i=1 ωpi (1) (2) 2 For both the B2g and B2g phonon modes, v is smaller than 2ωpΩe; therefore ωpv is smaller than ωp, meaning Appendix C: Illustration of the fitting model for the the renormalized phonon mode shifts to lower energy. Fano interference Interestingly, at frequency ωpv the renormalized excitonic continuum has the same intensity as the unrenormalized To provide more insights into the fitting model de- continuum; below ωpv the excitonic response is enhanced scribed in AppendixB, we consider a simplified case in while above ωpv the excitonic response is suppressed. which only one phonon mode couples to an excitonic con- Second we discuss the interference effect. For the inter- tinuum. When exciton-phonon interaction v is zero, the ference term, corresponding to the off-diagonal elements total Raman response is reduced to the sum of the exci- of the renormalized Green’s function, there is a frequency tonic component and the phononic component: ωint at which it changes the sign. The frequency ωint has the following expression 2 4t2γ ω ω 00 teω p p p q χ (ω) = + , 2 2 0 2 2 2 2 2 2 2 2 4 ωint = 2Ωeγp + γ + ω . (C3) Ωe + ω (ω − ωp) + 2γp (ω + ωp) + γp p p (C1) 2 We note that ωint is a bit larger than ωp. The shape of the in which Ωe stands for ωe /γe. interference term is controlled by sign of v: for positive v, below the zero-intensity point the interference term has �� (a)

�� ) (a) �� v/ωp

) 2 (ωe /γe)/ωp = 1.3 �� (

�� χ �� ( �� χ �� (b) (b) ω/ω 2 �� (��) �� (�ωe /γe)/ωp ) v/ωp = 0.3

) �� ( �� χ ( � �� χ � -� �� ω/ω� � � �� (��) FIG. 29. The influence of the coupling strength v, and the frequency at which the excitonic continuum has maximum 2 00 FIG. 28. Coupling of the excitonic continuum with (a) the intensity Ωe = ωe /γe on the Raman response χ (ω) of the (1) (2) B2g phonon mode and (b) the B2g phonon mode. The pa- coupled excitonic and phononic modes. (a) The combined re- rameters used for plotting are obtained from fitting the 380 K sponse for varying v/ωp with fixed Ωe/ωp=1.3; (b) The com- 00 spectrum of Ta2NiSe5. The Raman response χ (ω) of the bined response for varying Ωe/ωp with fixed v/ωp=0.3. For excitonic and phononic excitations for cases without (dashed all panels, tp=3.8 arb. units; te=7.2 arb. units; ωp=7.8 meV; lines) and with (solid lines) the effect of coupling are com- γp=0.38 meV. The ratios derived from the 380 K spectrum of pared. The solid red lines correspond to the addition of the Ta2NiSe5 are Ωe/ωp=1.3 and v/ωp=0.3. The horizontal axis solid blue, solid green, and solid orange lines. is normalized to the phonon frequency ωp. 23 positive intensity while the intensity is negative above the zero-intensity point; for negative v, the opposite is TABLE VI. The fitting parameters of the anharmonic decay model [Eq. (16-17)] for the Raman-active optical phonon true. Far away from the resonance, the interference term modes of Ta2Ni(Se1−xSx)5 family. The frequencies and decays to zero because the phonon mode has negligible FWHM below the phase transition temperature are fitted. intensity at such high energy. The anharmonic decay model is not applicable for the B2g- Finally we note that when ω is much larger than ωp symmetry modes of Ta2NiS5. The units are in meV. and γe, the Raman response is In Fig. 29 we show how the coupling strength v, and the energy at which the ex- Mode ω0 ω2 Γ0 Γ2 2 citonic continuum has maximum intensity Ωe = ωe /γe influence the combined Raman response. The lineshape Ta2NiSe5 becomes more asymmetric with increasing v/ωp [Fig. 29 (a)]. When Ω is varied, we find that the lineshape be- (1) e Ag 4.235(16) 0.0038(10) 0.06(4) 0.0014(15) comes more asymmetric for smaller Ωe [Fig. 29 (b)]. (1) 2 B2g 8.721(5) 0.0290(11) 0.073(15) 0.019(3) approximately te/ω. Therefore, te can be determined (2) Ag 12.484(12) 0.0405(22) 0.09(3) 0.025(6) by fitting the data at large ω. (2) B2g 15.35(4) 0.070(15) 0.05(10) 0.09(4) (3) Ag 17.077(12) 0.191(5) 0.08(5) 0.114(23) (3) Appendix D: The fitted parameters of the B2g 18.45(3) 0.050(16) 0.11(10) 0.08(5) (4) anharmonic decay model for Ta2NiSe5 and Ta2NiS5 Ag 22.28(3) 0.082(15) 0.12(8) 0.05(4) (5) Ag 24.287(11) 0.129(6) 0.05(3) 0.072(15) (6) The temperature dependence of both frequency and Ag 27.17(4) 0.137(16) 0.23(11) 0.09(5) FWHM for the most phonon modes of Ta2NiSe5 and (7) Ag 29.62(6) 0.21(3) 0.18(16) 0.12(9) Ta NiS modes can be accounted by the anharmonic de- (8) 2 5 A 36.75(14) 0.30(8) 0.3(4) 0.09(24) cay model [Eq. (16-17)]. The values for the parameters g from fitting are summarized in TableVI. Ta2Ni(Se0.75S0.25)5

(1) Ag 4.277(16) 0.0039(9) 0.12(5) 0.0025(34) (1) B2g 8.758(7) 0.0322(15) 0.252(21) 0.028(4)

Ta2Ni(Se0.33S0.67)5

(1) Ag 4.630(12) 0.0048(8) 0.10(2) 0.0012(11) (1) B2g 8.739(19) 0.032(4) 0.479(26) 0.022(4)

Ta2NiS5

(1) Ag 5.025(10) 0.0040(7) 0.068(25) 0.0014(19) (2) Ag 16.198(4) 0.0610(13) 0.051(9) 0.0359(26) (3) Ag 19.276(11) 0.134(4) 0.11(3) 0.070(11) (4) Ag 33.92(4) 0.111(19) 0.28(11) 0.15(6) (5) Ag 36.634(10) 0.138(5) 0.056(28) 0.112(16) (6) Ag 40.29(20) 0.21(12) 0.6(7) 0.3(4) (7) Ag 43.39(6) 0.29(4) 0.01(14) 0.17(9) (8) Ag 49.72(3) 0.23(3) 0.04(10) 0.45(8) 24

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