Lessons Learnt from the Semiconductor Chip Industry and Its IP Law Framework, 32 J
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Economic Research Working Paper No. 27
Economic Research Working Paper No. 27 Breakthrough technologies – Semiconductor, innovation and intellectual property Thomas Hoeren Francesca Guadagno Sacha Wunsch-Vincent Economics & Statistics Series November 2015 Breakthrough Technologies – Semiconductors, Innovation and Intellectual Property Thomas Hoeren*, Francesca Guadagno**, Sacha Wunsch-Vincent** Abstract Semiconductor technology is at the origin of today’s digital economy. Its contribution to innova- tion, productivity and economic growth in the past four decades has been extensive. This paper analyzes how this breakthrough technology came about, how it diffused, and what role intellec- tual property (IP) played historically. The paper finds that the semiconductor innovation ecosys- tem evolved considerably over time, reflecting in particular the move from early-stage invention and first commercialization to mass production and diffusion. All phases relied heavily on con- tributions in fundamental science, linkages to public research and individual entrepreneurship. Government policy, in the form of demand-side and industrial policies were key. In terms of IP, patents were used intensively. However, they were often used as an effective means of sharing technology, rather than merely as a tool to block competitors. Antitrust policy helped spur key patent holders to set up liberal licensing policies. In contrast, and potentially as a cautionary tale for the future, the creation of new IP forms – the sui generis system to protect mask design - did not produce the desired outcome. Finally, copyright has gained in importance more re- cently. Keywords: semiconductors, innovation, patent, sui generis, copyright, intellectual property JEL Classification: O330, O340, O470, O380 Disclaimer: The views expressed in this article are those of the authors and do not necessarily reflect the views of the World Intellectual Property Organization or its member states. -
Rendons À Julius, Oskar, Herbert, Greenleaf, Jagadish
Rendons à Julius, Oskar, Herbert, Greenleaf, Jagadish .… ce qui est à eux ! Et comment la France a failli devancer les USA à 48 jours prés! Par Jean- Marie Mathieu RFL3657 [email protected] Nous connaissons tous la découverte du ‘’transfer-resistor’’ ou transistor en 1948 aux USA, événement majeur marquant la naissance de l’ère du semi-conducteur (dite aussi électronique du solide, ou électronique froide). En effet, après la deuxième guerre mondiale William Bradford Shockley chez Bell Telephone Laboratories (BTL) dirige une équipe dont les membres principaux sont John Bardeen et Walter Houser Brattain. Ces deux derniers soudés par une très amicale coopération, travaillent sur la conductivité superficielle du Germanium en utilisant deux contacts polarisés. John est le théoricien (docteur en 1935 et compétant en mécanique quantique), Walter est l’expérimentateur et découvreur. Ils montrent que l’on peut moduler la conductivité, et l’idée qu’il pourrait y avoir un phénomène d’amplification devient évidente. Ainsi inspirés, ils aboutissent rapidement en décembre 1947. De son coté, Shockley travaille sur l’action du champ électrique dans les oxydes métalliques (semi-conducteur) et il sent le succès lui échapper. L’ambiance de l’équipe se dégrade, et Shockley s’oppose à Bardeen et Brattain. Finalement Bardeen et Bratten présentent seuls le ‘’Semi-Conductor Triode ‘’ à la Physical Review le 25 juin 1948 (voir ci dessous). Une photo de presse de 1948 montre de gauche à droite John, William et Walter. On voit ci-dessous un prototype de circuit intégré à 40 transistors pour calculateur de tir fait par Walter Mac Williams à B.T.L. -
Federico Capasso
Federico Capasso ADDRESS: John A. Paulson School of Engineering and Applied Sciences Harvard University 205 A Pierce Hall 29 Oxford Street Cambridge MA 02138 PHONE: (617) 384-7611 FAX: (617) 495-2875 EMAIL: [email protected] PERSONAL: Married; two children CITIZENSHIP: Italian and U.S. (Naturalized; 09/23/1992) EDUCATION: 1973 Doctor of Physics, Summa Cum Laude University of Rome, La Sapienza, Italy 1973-1974 Postdoctoral Fellow Fondazione Bordoni, Rome, Italy ACADEMIC APPOINTMENTS Jan. 2003- Present Robert Wallace Professor of Applied Physics Vinton Hayes Senior Research Fellow in Electrical Engineering, John A. Paulson, School of Engineering and Applied Sciences, Harvard University, PROFESSIONAL POSITIONS: 2000 – 2002 Vice President of Physical Research, Bell Laboratories Lucent Technologies, Murray Hill, NJ 1997- 2000 Department Head, Semiconductor Physics Research, Bell Laboratories Lucent Technologies, Murray Hill, NJ. 1987- 1997 Department Head, Quantum Phenomena and Device Research, Bell Laboratories Lucent Technologies (formerly AT&T Bell Labs, until 1996), Murray Hill, NJ 1984 – 1987 Distinguished Member of Technical Staff, Bell Laboratories, Murray Hill, NJ 1977 – 1984 Member of Technical Staff, Bell Laboratories, Murray Hill, NJ 1976 – 1977 Visiting Scientist, Bell Laboratories, Holmdel, NJ 1974 – 1976 Research Physicist, Fondazione Bordoni, Rome, Italy Citations (Google Scholar) Over 93000 H-index (Google Scholar) 144 Publications Over 500 hundred peer reviewed journals Patents 70 US patents KEY ACHIEVEMENTS 1. Bandstructure Engineering and Quantum Cascade Lasers (QCLs) Capasso and his Bell Labs collaborators over a 20-year period pioneered band-structure engineering, a technique to design and implement artificially structured (“man-made”) semiconductor, materials, and related phenomena/ devices, which revolutionized heterojunction devices in photonics and electronics. -
Bipolar Junction Transistor As a Switch
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) e-ISSN: 2278-1676,p-ISSN: 2320-3331, Volume 13, Issue 1 Ver. I (Jan. – Feb. 2018), PP 52-57 www.iosrjournals.org Bipolar Junction Transistor as a Switch Ali Habeb Aseeri1, Fouzeyah Rajab Ali2 1(Switching Dep, High institute of telecommunication and navigation/PAAET, Kuwait,[email protected]) 2(Switching Dep, High institute of telecommunication and navigation/PAAET, Kuwait,[email protected]) Abstract: Understanding the application of a bipolar Junction transistor or BJT as a switch requiers understanding the general working principles behind a transistor and the specific working principles behind a BJT. A transistor is essentially a semiconductor device with physical properties that make it ideal for amplifying or switching electric current and other signal. At the heart of this device is a doped semiconductor with engineered properties to alter its conductivity for a particular use. A BJT is a type of transistor with two major semiconductor materials that constitute three major areas or regions, each doped according to requirements. This architectural characteristics of a BJT brings forth effective applications in implications or on-off switching operations. Nonetheless, understanding BJT as a switch requires understanding the working principles underneath the device, the functions of each of the three major regions within this transistor, and the role of electron movement or current flow in the switching mechanism Keywords: BJT-collector-emitter-base-collector voltage -
12.2% 122,000 135M Top 1% 154 4,800
View metadata, citation and similar papers at core.ac.uk brought to you by CORE We are IntechOpen, provided by IntechOpen the world’s leading publisher of Open Access books Built by scientists, for scientists 4,800 122,000 135M Open access books available International authors and editors Downloads Our authors are among the 154 TOP 1% 12.2% Countries delivered to most cited scientists Contributors from top 500 universities Selection of our books indexed in the Book Citation Index in Web of Science™ Core Collection (BKCI) Interested in publishing with us? Contact [email protected] Numbers displayed above are based on latest data collected. For more information visit www.intechopen.com Chapter 1 Introductory Chapter: VLSI Kim Ho Yeap and Humaira Nisar Kim Ho Yeap and Humaira Nisar Additional information is available at the end of the chapter Additional information is available at the end of the chapter http://dx.doi.org/10.5772/intechopen.69188 1. Introduction Back in the old days about 40 years ago, the number of transistors found in a chip was, even at its highest count, less than 10,000. Take, for example, the once popular Motorola 6800 micro‐ processor developed in the mid 1970s. Fabricated based on the 6.0‐μm feature size, the 6800 consisted of merely 4100 transistors in it. Nowadays, the number of transistors in a very large‐ scale integration (VLSI) [or some refer to it as the super large‐scale integration (SLSI)] chip may possibly reach 10 billion, with a feature size smaller than 15 nm. There is little doubt that the electronics world has experienced a significant advancement for the past 50 years or so and this, to a large extent, is due to the rapid technology improvement in the performance, power, area, cost and ‘time to market’ of an integrated circuit (IC) chip. -
Università Degli Studi Di Padova Padua Research Archive
Università degli Studi di Padova Padua Research Archive - Institutional Repository Seventy Years of Getting Transistorized Original Citation: Availability: This version is available at: 11577/3257397 since: 2018-02-15T16:02:20Z Publisher: Institute of Electrical and Electronics Engineers Inc. Published version: DOI: 10.1109/MIE.2017.2757775 Terms of use: Open Access This article is made available under terms and conditions applicable to Open Access Guidelines, as described at http://www.unipd.it/download/file/fid/55401 (Italian only) (Article begins on next page) Historical by Massimo Guarnieri Seventy Years of Getting Transistorized Massimo Guarnieri acuum tubes appeared at the germanium. His device resembled the War II. Ohl, an American researcher break of the 20th century, giv- previous work of Julius Edgar Lilienfeld at Bell Labs, had invented the doping Ving birth to electronics [1]. By the (1882–1963) and Russell Shoemaker technique and produced the first p–n 1930s, they had become established as a Ohl (1898–1987) [5]. Lilienfeld was a junction in 1939. The patent applica- mature technology, spreading into areas German physicist who had migrated to tion for the transistor was submitted such as radio communications, long- the United States in 1921, where he had in June 1948. Although Shockley led distance radiotelegraphy, radio broad- patented a field-effect-transistor-like the team of Bardeen and Brattain at the casting, telephone communication and device in 1925. However, he had been Solid-State Physics Group, they devel- switching, sound recording and play- unable to make a working prototype be- oped their two devices independently ing, television, radar, and air navigation cause of a lack of sufficiently pure crys- because of the strong antagonism be- [2]. -
HOW EUROPE MISSED the TRANSISTOR the Most Important Invention of the 20Th Century Was Conceived Not Just Once, but Twice by MICHAEL RIORDAN
HISTORY INVENTION AND INVENTORS: In Paris, + shortly after World War II, two German scientists, Herbert Mataré [left] and Heinrich Welker, invented the “tran- sistron,” a solid-state amplifier remark- ably similar to the transistor developed by Bell Telephone Laboratories at about the same time. In this X-ray image of a commercial transistron built in the early 1950s, two closely spaced metal point contacts, one from each end, touch the surface of a germanium sliver. A third electrode contacts the other side of the sliver. Mataré is now retired and living in Malibu, Calif. HOW EUROPE MISSED THE TRANSISTOR The most important invention of the 20th century was conceived not just once, but twice BY MICHAEL RIORDAN www.spectrum.ieee.org November 2005 | IEEE Spectrum | INT 47 At the time, German radar systems operated at wavelengths as those made of silicon, which seemed best suited for microwave short as half a meter. But the systems could not work at shorter reception. But the Allied bombing of Berlin was making life exceed- wavelengths, which would have been better able to discern smaller ingly difficult for Telefunken researchers. “I spent many hours in targets, like enemy aircraft. The problem was that the vacuum- subway stations during bomb attacks,” he wrote in an unpublished tube diodes that rectified current in the early radar receivers could memoir. So in January 1944, the company shifted much of its radar not function at the high frequencies involved. Their dimensions— research to Breslau in Silesia (now Wroclaw, Poland). Mataré worked especially the gap between the diode’s anode and cathode—were in an old convent in nearby Leubus. -
On the Nobel Prize in Physics, Controversies and Influences by C
Global Journal of Science Frontier Research Physics and Space Science Volume 13 Issue 3 Version 1.0 Year 2013 Type : Double Blind Peer Reviewed International Research Journal Publisher: Global Journals Inc. (USA) Online ISSN: 2249-4626 & Print ISSN: 0975-5896 On the Nobel Prize in Physics, Controversies and Influences By C. Y. Lo Applied and Pure Research Institute Abstract - The Nobel Prizes were established by Alfred Bernhard Nobel for those who confer the "greatest benefit on mankind", and specifically in physics, chemistry, peace, physiology or medicine, and literature. In 1968 the Nobel Memorial Prize in Economic Sciences was established. However, the proceedings, nominations, awards, and exclusions have generated criticism and controversy. The controversies and influences related to the Nobel Physics Prize are discussed. The 1993 Nobel Prize in Physics was awarded to Hulse and Taylor, but the related theory was still incorrect as Gullstrand conjectured. The fact that Christodoulou received honors for related errors testified, “Unthinking respect for authority is the greatest enemy of truth” as Einstein asserted. The strategy based on the recognition time lag failed because of mathematical and logical errors. These errors were also the obstacles for later crucial progress. Also, it may be necessary to do follow up work after the awards years later since an awarded work may still be inadequately understood. Thus, it is suggested: 1) To implement the demands of Nobel’s will, the Nobel Committee should rectify their past errors in sciences. 2) To timely update the status of achievements of awarded Nobel Prizes in Physics, Chemistry, and Physiology or Medicine. 3) To strengthen the implementation of Nobel’s will, a Nobel Prize for Mathematics should be established. -
PDF and Print on Demand
I LIBRI DE «IL COLLE DI GALILEO» – 2 – EDITOR-IN-CHIEF Roberto Casalbuoni (Università di Firenze) EDITORIAL BOARD Francesco Cataliotti (Università di Firenze) Guido Chelazzi (Università di Firenze; Museo di Storia Naturale, President) Stefania De Curtis (INFN) Paolo De Natale (Istituto Nazionale di Ottica, Direttore) Daniele Dominici (Università di Firenze) Pier Andrea Mandò (Università di Firenze; Sezione INFN Firenze, Director) Francesco Palla (Osservatorio di Arcetri) Giuseppe Pelosi (Università di Firenze) Giacomo Poggi (Università di Firenze) Enrico Fermi’s IEEE Milestone in Florence For his Major Contribution to Semiconductor Statistics, 1924-1926 edited by Gianfranco Manes Giuseppe Pelosi Firenze University Press 2015 Enrico Fermi’s IEEE Milestone in Florence : for his Major Contribution to Semiconductor Statistics, 1924-1926 / edited by Gianfranco Manes, Giuseppe Pelosi. – Firenze : Firenze University Press, 2015. (I libri de «Il Colle di Galileo» ; 2) http://digital.casalini.it/9788866558514 ISBN 978-88-6655-850-7 (print) ISBN 978-88-6655-851-4 (online) Graphic Design: Alberto Pizarro Fernández, Pagina Maestra snc Back cover photo: The first operating transistor, developed at Bell Laboratories (1947) IEEE History Center Press available as open access PDF and Print on Demand http://ethw.org/Archives:IEEE_History_Center_Book_Publishing Peer Review Process All publications are submitted to an external refereeing process under the responsibility of the FUP Editorial Board and the Scientific Committees of the individual series. The works published in the FUP catalogue are evaluated and approved by the Editorial Board of the publishing house. For a more detailed description of the refereeing process we refer to the official documents published in the online catalogue of the FUP (www.fupress.com). -
Science in Song
NO. 86: JUNE 2008 ISSN: 1751-8261 Contents Science in song Main feature 1 Science in song Melanie Keene considers the yield of the Outreach and Education BSHS grants report 4 project on songs that reflect, satirise and celebrate science. A reception study? 5 Reports of Meetings 6 ‘Oh! have you heard the news of late, reach and Education Committee has been About our great original state; collecting examples of scientific songs from BSHS Postgrad Conference If you have not, I will relate the past two hundred years. Ranging across BSLS The grand Darwinian theory…’ historical periods, geographic locations, musi- Imperial & Colonial Medicine cal and lyrical genres, disciplinary divisions, Wrexham Science Festival How did you first come to hear about the and degrees of expertise, many different theory of evolution? For many children at the cultures have embraced the choral possibili- Reviews 9 end of the 19th century it was through The ties of the natural and technological worlds. ‘Undead controversies’ 10 Scottish Students’ Songbook and John Young’s Encompassing everything from 17th-century scientific song ‘The Grand Darwinian Theory’. ballads on fen drainage to Jingle Bells rewrit- The questionnaire 10 But why was a member of the Perthshire ten as a carol celebrating lipid biochemistry, BSHS news 12 Society of Natural Science writing such lyrics? this diverse array of tunes and lyrics was What is the history of science in song? composed by figures from the well-known News 14 Over the last few months the BSHS Out- Irving Berlin to the rather more mysteriously- Listings 15 BJHS, Viewpoint details 16 Editorial This issue is again kicked off with an excel- lent leading article, this time by Melanie Keene on ‘scientific’ songs. -
The Field Effect Transistor
The Field Effect Transistor 1. Introduction The Field Effect Transistor (FET) has a long story from concept to the first physical implementation. The idea of a field effect transistor was first presented and patented in 1926 by the physicist Julius Edgar Lilienfeld. In 1935, the electrical engineer and inventor Oskar Heil described the possibility of controlling the resistance in a semiconducting material with an electric field in a British patent. A team from Bell Labs formed by John Bardeen and Walter Houser Brattain under the supervision of William Shockley observed and described the transistor effect in 1947. Their trying to build a working FET was unsuccessful, but they accidentally discovered the point-contact transistor. This epochal invention was followed by Shockley’s bipolar junction transistor (BJT) in 1948. In 1945, Heinrich Welker patented for the first time a Junction Field Effect Transistor (JFET). A Japanese team formed by Y. Watanabe and professor Jun-Ichi Nishizawa of Tohoku University patented the Static Induction Transistor (SIT) in 1950. The device controlled current flow by means of the static induction or electrostatic field surrounding two opposed gates (it was conceived as a solid-state analog of the vacuum-tube triode, and the first SIT’s were produced in 1970 by several Japanese companies). In 1952 William Shockley presented theoretical aspects regarding the JFET structure and its operation. Then, the first JFET was produced as a practical device by George Clement Dacey and Ian Munro Ross from Bell Labs in 1953, under the supervision of William Shockley. In 1959, Mohamed M. Atalla and Dawon Kahng from Bell Labs invented the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). -
Administrative Services Building Rm 2072 Color Multi-20190610100738
SUMMARY OF PERSONNEL ACTIONS REGENTS AGENDA June 2019 ANN ARBOR CAMPUS – Recommendations for approval 1. New appointments and promotions for regular associate and full professor ranks, with tenure. (1) Chai, Joyce Y., professor of electrical engineering and computer science, with tenure, College of Engineering, effective September 1, 2019. (2) Fryberg, Stephanie A., professor of psychology, with tenure, College of Literature, Science, and the Arts, effective September 1, 2019. (3) Gregg IV, Robert D., associate professor of electrical engineering and computer science, with tenure, College of Engineering, effective September 1, 2019. (4) Gulani, Vikas, Ph.D., M.D., chair, Department of Radiology, professor of radiology, with tenure, effective July 1, 2019, and Fred Jenner Hodges Professor of Radiology, Medical School, effective July 1, 2019 through August 31, 2024. (5) Hughes, Amy E., associate professor of theatre and drama, with tenure, School of Music, Theatre & Dance, effective September 1, 2019. (6) Maguire-Jack, Kathryn, associate professor of social work, with tenure, School of Social Work, effective September 1, 2019. (7) Pfeffer, Fabian T., promotion to associate professor of sociology, with tenure, College of Literature, Science, and the Arts, effective September 1, 2019 (currently assistant professor of sociology). (8) Seiberlich, Nicole, Ph.D., associate professor of radiology, with tenure, associate professor of internal medicine, without tenure, Medical School, and associate professor of biomedical engineering, without tenure, Medical School and College of Engineering, effective July 1, 2019. (9) Wexler, Lisa Marin, professor of social work, with tenure, School of Social Work, effective September 1, 2019. (10) Ying, Lei, professor of electrical engineering and computer science, with tenure, College of Engineering, effective September 1, 2019.