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The Invention of the Transistor
The invention of the transistor Michael Riordan Department of Physics, University of California, Santa Cruz, California 95064 Lillian Hoddeson Department of History, University of Illinois, Urbana, Illinois 61801 Conyers Herring Department of Applied Physics, Stanford University, Stanford, California 94305 [S0034-6861(99)00302-5] Arguably the most important invention of the past standing of solid-state physics. We conclude with an century, the transistor is often cited as the exemplar of analysis of the impact of this breakthrough upon the how scientific research can lead to useful commercial discipline itself. products. Emerging in 1947 from a Bell Telephone Laboratories program of basic research on the physics I. PRELIMINARY INVESTIGATIONS of solids, it began to replace vacuum tubes in the 1950s and eventually spawned the integrated circuit and The quantum theory of solids was fairly well estab- microprocessor—the heart of a semiconductor industry lished by the mid-1930s, when semiconductors began to now generating annual sales of more than $150 billion. be of interest to industrial scientists seeking solid-state These solid-state electronic devices are what have put alternatives to vacuum-tube amplifiers and electrome- computers in our laps and on desktops and permitted chanical relays. Based on the work of Felix Bloch, Ru- them to communicate with each other over telephone dolf Peierls, and Alan Wilson, there was an established networks around the globe. The transistor has aptly understanding of the band structure of electron energies been called the ‘‘nerve cell’’ of the Information Age. in ideal crystals (Hoddeson, Baym, and Eckert, 1987; Actually the history of this invention is far more in- Hoddeson et al., 1992). -
A HISTORY of the SOLAR CELL, in PATENTS Karthik Kumar, Ph.D
A HISTORY OF THE SOLAR CELL, IN PATENTS Karthik Kumar, Ph.D., Finnegan, Henderson, Farabow, Garrett & Dunner, LLP 901 New York Avenue, N.W., Washington, D.C. 20001 [email protected] Member, Artificial Intelligence & Other Emerging Technologies Committee Intellectual Property Owners Association 1501 M St. N.W., Suite 1150, Washington, D.C. 20005 [email protected] Introduction Solar cell technology has seen exponential growth over the last two decades. It has evolved from serving small-scale niche applications to being considered a mainstream energy source. For example, worldwide solar photovoltaic capacity had grown to 512 Gigawatts by the end of 2018 (representing 27% growth from 2017)1. In 1956, solar panels cost roughly $300 per watt. By 1975, that figure had dropped to just over $100 a watt. Today, a solar panel can cost as little as $0.50 a watt. Several countries are edging towards double-digit contribution to their electricity needs from solar technology, a trend that by most accounts is forecast to continue into the foreseeable future. This exponential adoption has been made possible by 180 years of continuing technological innovation in this industry. Aided by patent protection, this centuries-long technological innovation has steadily improved solar energy conversion efficiency while lowering volume production costs. That history is also littered with the names of some of the foremost scientists and engineers to walk this earth. In this article, we review that history, as captured in the patents filed contemporaneously with the technological innovation. 1 Wiki-Solar, Utility-scale solar in 2018: Still growing thanks to Australia and other later entrants, https://wiki-solar.org/library/public/190314_Utility-scale_solar_in_2018.pdf (Mar. -
High Energy Yield Bifacial-IBC Solar Cells Enabled by Poly-Siox Carrier Selective Passivating Contacts
High energy yield Bifacial-IBC solar cells enabled by poly-SiOx carrier selective passivating contacts Zakaria Asalieh TU Delft i High energy yield Bifacial-IBC solar cells enabled by poly-SiOX carrier selective passivating contacts By Zakaria Asalieh in partial fulfilment of the requirements for the degree of Master of Science at the Delft University of Technology, to be defended publicly on Thursday April 1, 2021 at 15:00 Supervisor: Asso. Prof. dr. Olindo Isabella Dr. Guangtao Yang Thesis committee: Assoc. Prof. dr. Olindo Isabella, TU Delft (ESE-PVMD) Prof. dr. Miro Zeman, TU Delft (ESE-PVMD) Dr. Massimo Mastrangeli, TU Delft (ECTM) Dr. Guangtao Yang, TU Delft (ESE,PVMD) ii iii Conference Abstract Evaluation and demonstration of bifacial-IBC solar cells featuring poly-Si alloy passivating contacts- Guangtao Yang, Zakaria Asalieh, Paul Procel, YiFeng Zhao, Can Han, Luana Mazzarella, Miro Zeman, Olindo Isabella – EUPVSEC 2021 iv v Acknowledgement First, I would like to express my gratitude to Dr Olindo Isabella for giving me the opportunity to work with his group. He is one of the main reasons why I chose to do my master thesis in the PVMD group. After finishing my internship on solar cells, he recommended me to join the thesis projects event where I decided to work on this interesting thesis topic. I cannot forget his support when my family and I had the Covid-19 virus. Second, I'd like to thank my daily supervisor Dr Guangtao Yang, despite supervising multiple MSc students, was able to provide me with all of the necessary guidance during this work. -
Rendons À Julius, Oskar, Herbert, Greenleaf, Jagadish
Rendons à Julius, Oskar, Herbert, Greenleaf, Jagadish .… ce qui est à eux ! Et comment la France a failli devancer les USA à 48 jours prés! Par Jean- Marie Mathieu RFL3657 [email protected] Nous connaissons tous la découverte du ‘’transfer-resistor’’ ou transistor en 1948 aux USA, événement majeur marquant la naissance de l’ère du semi-conducteur (dite aussi électronique du solide, ou électronique froide). En effet, après la deuxième guerre mondiale William Bradford Shockley chez Bell Telephone Laboratories (BTL) dirige une équipe dont les membres principaux sont John Bardeen et Walter Houser Brattain. Ces deux derniers soudés par une très amicale coopération, travaillent sur la conductivité superficielle du Germanium en utilisant deux contacts polarisés. John est le théoricien (docteur en 1935 et compétant en mécanique quantique), Walter est l’expérimentateur et découvreur. Ils montrent que l’on peut moduler la conductivité, et l’idée qu’il pourrait y avoir un phénomène d’amplification devient évidente. Ainsi inspirés, ils aboutissent rapidement en décembre 1947. De son coté, Shockley travaille sur l’action du champ électrique dans les oxydes métalliques (semi-conducteur) et il sent le succès lui échapper. L’ambiance de l’équipe se dégrade, et Shockley s’oppose à Bardeen et Brattain. Finalement Bardeen et Bratten présentent seuls le ‘’Semi-Conductor Triode ‘’ à la Physical Review le 25 juin 1948 (voir ci dessous). Une photo de presse de 1948 montre de gauche à droite John, William et Walter. On voit ci-dessous un prototype de circuit intégré à 40 transistors pour calculateur de tir fait par Walter Mac Williams à B.T.L. -
Memorial Tributes: Volume 5
THE NATIONAL ACADEMIES PRESS This PDF is available at http://nap.edu/1966 SHARE Memorial Tributes: Volume 5 DETAILS 305 pages | 6 x 9 | HARDBACK ISBN 978-0-309-04689-3 | DOI 10.17226/1966 CONTRIBUTORS GET THIS BOOK National Academy of Engineering FIND RELATED TITLES Visit the National Academies Press at NAP.edu and login or register to get: – Access to free PDF downloads of thousands of scientific reports – 10% off the price of print titles – Email or social media notifications of new titles related to your interests – Special offers and discounts Distribution, posting, or copying of this PDF is strictly prohibited without written permission of the National Academies Press. (Request Permission) Unless otherwise indicated, all materials in this PDF are copyrighted by the National Academy of Sciences. Copyright © National Academy of Sciences. All rights reserved. Memorial Tributes: Volume 5 i Memorial Tributes National Academy of Engineering Copyright National Academy of Sciences. All rights reserved. Memorial Tributes: Volume 5 ii Copyright National Academy of Sciences. All rights reserved. Memorial Tributes: Volume 5 iii National Academy of Engineering of the United States of America Memorial Tributes Volume 5 NATIONAL ACADEMY PRESS Washington, D.C. 1992 Copyright National Academy of Sciences. All rights reserved. Memorial Tributes: Volume 5 MEMORIAL TRIBUTES iv National Academy Press 2101 Constitution Avenue, NW Washington, DC 20418 Library of Congress Cataloging-in-Publication Data (Revised for vol. 5) National Academy of Engineering. Memorial tributes. Vol. 2-5 have imprint: Washington, D.C. : National Academy Press. 1. Engineers—United States—Biography. I. Title. TA139.N34 1979 620'.0092'2 [B] 79-21053 ISBN 0-309-02889-2 (v. -
Bipolar Junction Transistor As a Switch
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) e-ISSN: 2278-1676,p-ISSN: 2320-3331, Volume 13, Issue 1 Ver. I (Jan. – Feb. 2018), PP 52-57 www.iosrjournals.org Bipolar Junction Transistor as a Switch Ali Habeb Aseeri1, Fouzeyah Rajab Ali2 1(Switching Dep, High institute of telecommunication and navigation/PAAET, Kuwait,[email protected]) 2(Switching Dep, High institute of telecommunication and navigation/PAAET, Kuwait,[email protected]) Abstract: Understanding the application of a bipolar Junction transistor or BJT as a switch requiers understanding the general working principles behind a transistor and the specific working principles behind a BJT. A transistor is essentially a semiconductor device with physical properties that make it ideal for amplifying or switching electric current and other signal. At the heart of this device is a doped semiconductor with engineered properties to alter its conductivity for a particular use. A BJT is a type of transistor with two major semiconductor materials that constitute three major areas or regions, each doped according to requirements. This architectural characteristics of a BJT brings forth effective applications in implications or on-off switching operations. Nonetheless, understanding BJT as a switch requires understanding the working principles underneath the device, the functions of each of the three major regions within this transistor, and the role of electron movement or current flow in the switching mechanism Keywords: BJT-collector-emitter-base-collector voltage -
Solar Power in Building Design
Endorsements for Solar Power in Building Design Dr. Peter Gevorkian’s Solar Power in Building Design is the third book in a sequence of compre- hensive surveys in the field of modern solar energy theory and practice. The technical title does little to betray to the reader (including the lay reader) the wonderful and uniquely entertaining immersion into the world of solar energy. It is apparent to the reader, from the very first page, that the author is a master of the field and is weav- ing a story with a carefully designed plot. The author is a great storyteller and begins the book with a romantic yet rigorous historical perspective that includes the contribution of modern physics. A description of Einstein’s photoelectric effect, which forms one of the foundations of current photo- voltaic devices, sets the tone. We are then invited to witness the tense dialogue (the ac versus dc debate) between two giants in the field of electric energy, Edison and Tesla. The issues, though a century old, seem astonishingly fresh and relevant. In the smoothest possible way Dr. Gevorkian escorts us in a well-rehearsed manner through a fascinat- ing tour of the field of solar energy making stops to discuss the basic physics of the technology, manu- facturing process, and detailed system design. Occasionally there is a delightful excursion into subjects such as energy conservation, building codes, and the practical side of project implementation. All this would have been more than enough to satisfy the versed and unversed in the field of renew- able energy. -
The Silicon Solar Cell Turns 50
TELLING THE WORLD On April 25, 1954, proud Bell executives held a press conference where they impressed the media with the Bell Solar Battery powering a radio transmitter that was broadcasting voice and music. One journalist thought it important for the public to know that “linked together Daryl Chapin, Calvin Fuller, and Gerald Chapin began work in February 1952, electrically, the Bell solar cells deliver Pearson likely never imagined inventing but his initial research with selenium power from the sun at the rate of a solar cell that would revolutionize the was unsuccessful. Selenium solar cells, 50 watts per square yard, while the photovoltaics industry. There wasn’t the only type on the market, produced atomic cell announced recently by even a photovoltaics industry to revolu- too little power—a mere 5 watts per the RCA Corporation merely delivers tionize in 1952. square meter—converting less than a millionth of a watt” over the same 0.5% of the incoming sunlight into area. An article in U.S. News & World The three scientists were simply trying electricity. Word of Chapin’s problems Report speculated that one day such to solve problems within the Bell tele- came to the attention of another Bell silicon strips “may provide more phone system. Traditional dry cell researcher, Gerald Pearson. The two power than all the world’s coal, oil, batteries, which worked fine in mild scientists had been friends for years. and uranium.” The New York Times climates, degraded too rapidly in the They had attended the same university, probably best summed up what Chapin, tropics and ceased to work when needed. -
Crystal Fire: the Birth of the Information Age
Crystal Fire: The Birth of the Information Age Theme: Sources Harold Fox “Silicon” is a compound that defines much of the modern technological era. The term connotes high-technology, exponential progress in Moore’s law, Silicon Valley, solar panels, even plastic surgery. The source of this transformation in large part arises from a single invention, the transistor, a sandwich of different types of silicon crystals. “Crystal Fire,” by Lillian Hoddeson and Michael Riordan, describes the invention of this device and its development up to the beginning of the microelectronic age of the 1960s. This is an unusually compelling story, both because of the invention’s huge impact and because of its straightforward progression of events involving a small number of people. The authors do an excellent job of telling the story as well as setting the institutional, scientific, and personal context. The history of computing occupies a unique position in the history of technology. Because of its rapid changes and near-instant impact on society, there are complete stories to tell now. Intriguingly, many of the people involved in the critical events are still alive, permitting the genesis of new ideas and products to be followed in great detail. There is also a wealth of documentation, easily accessible. At the same time, it is more difficult to get a perspective of objective distance. People and companies have reputations to sustain, and they will work to steer the narrative in their direction. Historians must be savvy journalists. Hoddeson and Riordan do a good job with their sources. Hoddeson herself had been working on solid-state physics history for 25 years. -
Oral History Panel on Silicon Research and Development at Bell Telephone Laboratories
Oral History Panel on Silicon Research and Development at Bell Telephone Laboratories Participants: James Goldey William Hittinger Morris Tanenbaum Moderator: Michael Riordan Assisted by: Sheldon Hochheiser Recorded: September 25, 2008 Murray Hill, New Jersey CHM Reference number: X5031.2009 © 2008 Computer History Museum Bell Labs Silicon Transistor Development Michael Riordan: We’re at the Bell Labs archives at Alcatel-Lucent in Murray Hill, New Jersey. It's the 25th of September 2008, and we're here to do an interview with what I call the Bell Labs Silicon Pioneers. During the 1950s and into the 1960s, a group of men and some women at Bell Telephone Laboratories in Murray Hill, New Jersey, developed most of the silicon technology that went into the integrated circuit. If I had to come up with a number, I would say it was about 90 percent of the silicon technology that ended up in microchips in the 1960s. So they provided the fundamental basis for the modern information technology society that we live in today. I want to discuss the important work done during that time at Bell Labs and also at Western Electric Company, the AT&T manufacturing arm in nearby Allentown, Pennsylvania. I'm Michael Riordan, associated with the Computer History Museum in Mountain View, California and I'm also Adjunct Professor of Physics at the University of California Santa Cruz. I'll be the principal moderator of this interview. With me on my left is William Hittinger whom I'll call Bill, James Goldey whom I'll call Jim, and Morris Tanenbaum, or Morry. -
12.2% 122,000 135M Top 1% 154 4,800
View metadata, citation and similar papers at core.ac.uk brought to you by CORE We are IntechOpen, provided by IntechOpen the world’s leading publisher of Open Access books Built by scientists, for scientists 4,800 122,000 135M Open access books available International authors and editors Downloads Our authors are among the 154 TOP 1% 12.2% Countries delivered to most cited scientists Contributors from top 500 universities Selection of our books indexed in the Book Citation Index in Web of Science™ Core Collection (BKCI) Interested in publishing with us? Contact [email protected] Numbers displayed above are based on latest data collected. For more information visit www.intechopen.com Chapter 1 Introductory Chapter: VLSI Kim Ho Yeap and Humaira Nisar Kim Ho Yeap and Humaira Nisar Additional information is available at the end of the chapter Additional information is available at the end of the chapter http://dx.doi.org/10.5772/intechopen.69188 1. Introduction Back in the old days about 40 years ago, the number of transistors found in a chip was, even at its highest count, less than 10,000. Take, for example, the once popular Motorola 6800 micro‐ processor developed in the mid 1970s. Fabricated based on the 6.0‐μm feature size, the 6800 consisted of merely 4100 transistors in it. Nowadays, the number of transistors in a very large‐ scale integration (VLSI) [or some refer to it as the super large‐scale integration (SLSI)] chip may possibly reach 10 billion, with a feature size smaller than 15 nm. There is little doubt that the electronics world has experienced a significant advancement for the past 50 years or so and this, to a large extent, is due to the rapid technology improvement in the performance, power, area, cost and ‘time to market’ of an integrated circuit (IC) chip. -
Università Degli Studi Di Padova Padua Research Archive
Università degli Studi di Padova Padua Research Archive - Institutional Repository Seventy Years of Getting Transistorized Original Citation: Availability: This version is available at: 11577/3257397 since: 2018-02-15T16:02:20Z Publisher: Institute of Electrical and Electronics Engineers Inc. Published version: DOI: 10.1109/MIE.2017.2757775 Terms of use: Open Access This article is made available under terms and conditions applicable to Open Access Guidelines, as described at http://www.unipd.it/download/file/fid/55401 (Italian only) (Article begins on next page) Historical by Massimo Guarnieri Seventy Years of Getting Transistorized Massimo Guarnieri acuum tubes appeared at the germanium. His device resembled the War II. Ohl, an American researcher break of the 20th century, giv- previous work of Julius Edgar Lilienfeld at Bell Labs, had invented the doping Ving birth to electronics [1]. By the (1882–1963) and Russell Shoemaker technique and produced the first p–n 1930s, they had become established as a Ohl (1898–1987) [5]. Lilienfeld was a junction in 1939. The patent applica- mature technology, spreading into areas German physicist who had migrated to tion for the transistor was submitted such as radio communications, long- the United States in 1921, where he had in June 1948. Although Shockley led distance radiotelegraphy, radio broad- patented a field-effect-transistor-like the team of Bardeen and Brattain at the casting, telephone communication and device in 1925. However, he had been Solid-State Physics Group, they devel- switching, sound recording and play- unable to make a working prototype be- oped their two devices independently ing, television, radar, and air navigation cause of a lack of sufficiently pure crys- because of the strong antagonism be- [2].