1 Senior Scientist, Materials Science Division
Total Page:16
File Type:pdf, Size:1020Kb

Load more
Recommended publications
-
Effect of Bath Temperature on the Electrodeposition of Snse Thin
The 4th Annual Seminar of National Science Fellowship 2004 [AMT10] Aqueous electrodeposition and properties of tin selenide thin films Saravanan Nagalingam1, Zulkarnain Zainal1, Anuar Kassim1, Mohd. Zobir Hussein1, Wan Mahmood Mat Yunus2 1Department of Chemistry, 2Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia Introduction Motivated by the potential applications of composition of the electrolytic solution tin chalcogenides, investigations on these (Riveros et al., 2001). We report here the compounds are becoming particularly active electrodeposition of SnSe thin films under in the field of materials chemistry. Tin aqueous conditions in the presence of chalcogenides offer a range of optical band ethylendiaminetetraacetate (EDTA) as a gaps suitable for various optical and chelating agent. optoelectronic applications. These compounds are also used as sensor and laser materials, Materials and Methods thin films polarizers and thermoelectric A conventional three-electrode cell was cooling materials (Zweibel, 2000). employed in this study. Ag/AgCl was used as Considerable attention has been given by the reference electrode to which all potentials various researchers in studying the properties were quoted. The working and counter of tin selenide (SnSe). SnSe is a narrow band electrodes were made from indium tin oxide gap binary IV-VI semiconductor with an (ITO) glass substrate and platinum, orthorhombic crystal structure. Among the respectively. The ITO glass substrates were uses of tin selenide (SnSe) are as memory cleaned ultrasonically in ethanol and distilled switching devices, holographic recording water before the deposition process. The systems, and infrared electronic devices counter electrode was polished prior to the (Lindgren et al., 2002). SnSe has been studied insertion into the electrolyte cell. -
Electronic Structure of Designed [(Snse)1+D ]M [Tise2]
Invited Paper DOI: 10.1557/jmr.2019.128 Electronic structure of designed [(SnSe)1+d]m[TiSe2]2 heterostructure thin films with tunable layering sequence https://doi.org/10.1557/jmr.2019.128 . Fabian Göhler1 , Danielle M. Hamann2, Niels Rösch1, Susanne Wolff1, Jacob T. Logan2, Robert Fischer2, Florian Speck1, David C. Johnson2, Thomas Seyller1,a) 1Institute of Physics, Chemnitz University of Technology, D-09126 Chemnitz, Germany 2Department of Chemistry, University of Oregon, Eugene, Oregon 97401, USA a)Address all correspondence to this author. e-mail: [email protected] Received: 18 February 2019; accepted: 21 March 2019 fi m A series of [(SnSe)1+d]m[TiSe2]2 heterostructure thin lms built up from repeating units of bilayers of SnSe and two layers of TiSe2 were synthesized from designed precursors. The electronic structure of the films was https://www.cambridge.org/core/terms investigated using X-ray photoelectron spectroscopy for samples with m = 1, 2, 3, and 7 and compared to binary samples of TiSe2 and SnSe. The observed binding energies of core levels and valence bands of the heterostructures are largely independent of m. For the SnSe layers, we can observe a rigid band shift in the heterostructures compared to the binary, which can be explained by electron transfer from SnSe to TiSe2. The electronic structure of the TiSe2 layers shows a more complicated behavior, as a small shift can be observed in the valence band and Se3d spectra, but the Ti2p core level remains at a constant energy. Complementary UV photoemission spectroscopy measurements confirm a charge transfer mechanism where the SnSe layers donate electrons into empty Ti3d states at the Fermi energy. -
Curriculum Vitae Mercouri G
CURRICULUM VITAE MERCOURI G. KANATZIDIS Department of Chemistry, Northwestern University, Evanston, IL 60208 Phone 847-467-1541; Fax 847-491-5937; Website: http://chemgroups.northwestern.edu/kanatzidis/ Birth Date: 1957; Citizenship: US EXPERIENCE 8/06-Present: Professor of Chemistry, Northwestern University and Senior Scientist , Argonne National Laboratory, Materials Science Division, Argonne, IL 7/93-8/06: Professor of Chemistry, Michigan State University 7/91-6/93: Associate Professor, Michigan State University 7/87-6/91: Assistant Professor, Michigan State University EDUCATION Postdoctoral Fellow, 1987, Northwestern University Postdoctoral Associate, 1985, University of Michigan Ph.D. Inorganic Chemistry, 1984, University of Iowa B.S. Chemistry, November 1979, Aristotle University of Thessaloniki AWARDS • Presidential Young Investigator Award, National Science Foundation, 1989-1994 • ACS Inorganic Chemistry Division Award, EXXON Faculty Fellowship in Solid State Chemistry, 1990 • Beckman Young Investigator , 1992-1994 • Alfred P. Sloan Fellow, 1991-1993 • Camille and Henry Dreyfus Teacher Scholar, 1993-1998 • Michigan State University Distinguished Faculty Award, 1998 • Sigma Xi 2000 Senior Meritorious Faculty Award • University Distinguished Professor MSU, 2001 • John Simon Guggenheim Foundation Fellow, 2002 • Alexander von Humboldt Prize, 2003 • Morley Medal, American Chemical Society, Cleveland Section, 2003 • Charles E. and Emma H. Morrison Professor, Northwestern University, 2006 • MRS Fellow, Materials Research Society, 2010 • AAAS Fellow, American Association for the Advancment of Science, 2012 • Chetham Lecturer Award, University of California Santa Barbara, 2013 • Einstein Professor, Chinese Academy of Sciences, 2014 • International Thermoelectric Society Outstanding Achievement Award 2014 • MRS Medal 2014 • Royal Chemical Society DeGennes Prize 2015 • Elected Fellow of the Royal Chemical Society 2015 • ENI Award for the "Renewable Energy Prize" category • ACS Award in Inorganic Chemistry 2016 • American Physical Society 2016 James C. -
People in the News
PEOPLE IN THE NEWS ENI PRIZE TO SHERWOOD LOLLAR BRANTLEY, CARLSON, AND DOVE ELECTED Barbara Sherwood Lollar is the recipient of the 2012 Eni Award in TO THE NATIONAL ACADEMY OF SCIENCES Protection of the Environment for her work on compound-specifi c iso- The U.S. National Academy of Sciences (NAS) elected 84 new members tope analysis of volatile organic contaminants in groundwater. This and 21 foreign associates from 15 countries in recognition of their prestigious award is presented for outstanding research and innovation distinguished and continuing achievements in original research. in areas concerning the environmental impact of human activities, This brings the total number of active members to 2152 and the total specifi cally the protection and restoration of the environment, with number of foreign associates to 430. Established by President Abraham a special focus on research and innovative technologies to eliminate Lincoln in 1863, the NAS is a private, nonprofi t, honorifi c society of pollutants and to improve environmental conditions. The award was distinguished scholars engaged in scientifi c and engineering research. presented at the Quirinale Palace in Rome on June 15, 2012, by the Membership in the NAS is one of the highest honors given to a scientist president of Italy. The recognition includes a gold medal and an award in the United States. New members will be inducted into the Academy to the researcher of 200,000 euros. in April 2013 during its 150th annual meeting in Washington, D.C. Among these will be three prominent members of our community. Barbara Sherwood Lollar, FRSC, is a University Professor and Canada Research Chair in the Department of Earth Sciences, University Susan L. -
NREL Senior Research Fellow Arthur J. Nozik
NREL Senior Research Fellow Arthur J. Nozik Table of Contents Professional Recognition and Honors ......................................................................................... 2 Professional Activities ................................................................................................................ 4 Publications—Peer-Reviewed Journal Articles .......................................................................... 8 Books—Written or Edited ........................................................................................................ 26 Book Chapters ........................................................................................................................... 27 Published Conference Proceedings ........................................................................................... 30 Invited, Plenary, and Keynote Talks ......................................................................................... 32 Patents ....................................................................................................................................... 53 Professional Recognition and Honors • 2018 Clarivate Analytica (formerly Thomson Reuters) Highly Cited Researcher in Physics. • 2016 Wilbur Lucius Cross Medal of the Yale Graduate School Alumni Association. September 2016 • Honorary Symposium on “Lifetime Contributions,” University of Colorado, Boulder. March 2016 • 2014 Thomson Reuters Highly Cited Researcher (1 of fewer than 200 globally in the field of chemistry). • Heinz Gerischer -
PRAJNA - Journal of Pure and Applied Sciences ISSN 0975 2595 Volume 19 December 2011 CONTENTS
PRAJNA - Journal of Pure and Applied Sciences ISSN 0975 2595 Volume 19 December 2011 CONTENTS BIOSCIENCES Altered energy transfer in Phycobilisomes of the Cyanobacterium, Spirulina Platensis under 1 - 3 the influence of Chromium (III) Ayya Raju, M. and Murthy, S. D. S. PRAJNA Volume 19, 2011 Biotransformation of 11β , 17 α -dihydroxy-4-pregnene-3, 20-dione-21-o-succinate to a 4 - 7 17-ketosteroid by Pseudomonas Putida MTCC 1259 in absence of 9α -hydroxylase inhibitors Rahul Patel and Kirti Pawar Influence of nicking in combination with various plant growth substances on seed 8 - 10 germination and seedling growth of Noni (Morinda Citrifolia L.) Karnam Jaya Chandra and Dasari Daniel Gnana Sagar Quantitative analysis of aquatic Macrophytes in certain wetlands of Kachchh District, 11 - 13 Journal of Pure and Applied Sciences Gujarat J.P. Shah, Y.B. Dabgar and B.K. Jain Screening of crude root extracts of some Indian plants for their antibacterial activity 14 - 18 Purvesh B. Bharvad, Ashish R. Nayak, Naynika K. Patel and J. S. S. Mohan ________ Short Communication Heterosis for biometric characters and seed yield in parents and hybrids of rice 19 - 20 (Oryza Sativa L.) M. Prakash and B. Sunil Kumar CHEMISTRY Adsorption behavior and thermodynamics investigation of Aniline-n- 21 - 24 (p-Methoxybenzylidene) as corrosion inhibitor for Al-Mg alloy in hydrochloric acid V.A. Panchal, A.S. Patel and N.K. Shah Grafting of Butyl Acrylate onto Sodium Salt of partially Carboxymethylated Guar Gum 25 - 31 using Ceric Ions J.H. Trivedi, T.A. Bhatt and H.C. Trivedi Simultaneous equation and absorbance ratio methods for estimation of Fluoxetine 32 - 36 Hydrochloride and Olanzapine in tablet dosage form Vijaykumar K. -
Designing Isoelectronic Counterparts to Layered Group V Semiconductors
Designing isoelectronic counterparts to layered group V semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Tom´anek∗ Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, USA In analogy to III-V compounds, which have significantly broadened the scope of group IV semi- conductors, we propose IV-VI compounds as isoelectronic counterparts to layered group V semi- conductors. Using ab initio density functional theory, we study yet unrealized structural phases of silicon mono-sulfide (SiS). We find the black-phosphorus-like α-SiS to be almost equally stable as the blue-phosphorus-like β-SiS. Both α-SiS and β-SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds. INTRODUCTION RESULTS AND DISCUSSION 2D semiconductors of group V elements, including Since all atoms in sp3 layered structures of group V el- phosphorene and arsenene, have been rapidly attract- ements are threefold coordinated, the different allotropes ing interest due to their significant fundamental band can all be topologically mapped onto the honeycomb lat- gap, large density of states near the Fermi level, and tice of graphene with 2 sites per unit cell.[11] An easy high and anisotropic carrier mobility[1{4]. Combina- way to generate IV-VI compounds that are isoelectronic tion of these properties places these systems very favor- to group V monolayers is to occupy one of these sites by ably in the group of contenders for 2D electronics ap- a group IV and the other by a group VI element. -
Sustainability Report Eni for 2017
SUSTAINABILITY REPORT ENI FOR 2017 *00199* *00200* Guida dell’azionista 2018 ITA Guida dell’azionista 2018 ING *00201* *00202* Relazione Finanziaria 2017 ITA Annual Report 2017 ENG *00203* *00204* Fact Book 2017 ITA Fact Book 2017 ENG *00205* *00206* Luanda - Angola - (photo, Marilia Cioni) (photo, - Angola - Luanda Eni For 2017 ITA Eni For 2017 ENG *00207* *00208* Decarbonizzazione Eni For 2017 ITA Decarbonizzazione Eni For 2017 ENG *00209* *00210* Performace Eni For 2017 ITA Performance Eni For 2017 ENG *00211* *00212* Eni In 2017 Annual Report on Form 20F 2017 ENG *00213* *00214* Relazione sul Governo Societario 2017 ITA Relazione sul Governo Societario 2017 ENG *00215* *00216* Relazione sula Remunerazione 2018 ITA Relazione sula Remunerazione 2018 ENG MISSION We are an energy company. We are working to build a future where everyone can access energy resources efficiently and sustainably. Our work is based on passion and innovation, on our unique strengths and skills, on the quality of our people and in recognising that diversity across all aspects of our operations and organisation is something to be cherished. We believe in the value of long term partnerships with the countries and communities where we operate. Eni SpA Registered Office Piazzale Enrico Mattei, 1 - Rome - Italy Share capital: € 4,005,358,876.00 fully paid-up Business Register of Rome, taxpayer’s code 00484960588 Other Branches Via Emilia, 1 San Donato Milanese (MI) - Italy Piazza Ezio Vanoni, 1 San Donato Milanese (MI) - Italy Page layout and supervision K-Change -
Eni Award 2015
ENI AWARD 2015 Rome, 8 October 2015 - The 2015 Eni Award ceremony was held today at the Quirinale, in the presence of Italian President, Sergio Mattarella, Eni chair, Emma Marcegaglia and chief executive, Claudio Descalzi. The award, which was established in 2007, has become a point of international reference for research in the fields of energy and the environment. The Eni Award aims to encourage a better use of energy sources and to inspire a new generation of researchers, reflecting the importance Eni places on scientific research and sustainability issues. The Scientific Committee of the Eni Award is chaired by French academic Gerard Férey and is made up of 27 members including the Nobel laureate Sir Harold Kroto, university deans, researchers and scientists from the world’s most important centres of study and research. The Eni Awards were presented, together with the Eni Innovation Awards, to three internal research teams who have distinguished themselves for their level of innovation and business-related results. The research projects were selected by an external committee made up of four members of the Scientific Committee. In the past thousands of researchers from around the world have presented their research and numerous high-profile personalities have been part of the Scientific Committee. These include as many as 25 Nobel Prize-winners. For the 2015 edition, over 800 submissions were received. The “New Frontiers for Hydrocarbons” Prize was awarded, for the Upstream area, to Johan Olof Anders Robertsson, from Zurich’s ETH for recent research, conducted together with Dirk-Jan van Manen, Ali Özbek, Massimillano Vassallo and Kemal Özdemir. -
Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W
Article Cite This: J. Phys. Chem. C 2019, 123, 25437−25447 pubs.acs.org/JPCC Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W. Sprague Jr., Cancan Huang, Jeong-Pil Song,*, , and Brenda M. Rubenstein † Department of Chemistry, Brown University, Providence, Rhode Island 02912, United States ‡ Department of Physics, University of Arizona, Tucson, Arizona 85721, United States *S Supporting Information ABSTRACT: A majority of the electricity currently generated is regrettably lost as heat. Engineering high-efficiency thermo- electric materials which can convert waste heat back into electricity is therefore vital for reducing our energy fingerprint. ZT, a dimensionless figure of merit, acts as a beacon of promising thermoelectric materials. However, engineering materials with large ZT values is practically challenging, since maximizing ZT requires optimizing many interdepend- ent material properties. Motivated by recent studies on bulk indium selenide that suggest it may have favorable thermo- electric properties, here we present the thermoelectric properties of monolayer indium selenide in the presence of uniaxial strain using first-principles calculations conjoined with semiclassical Boltzmann transport theory. Our calculations indicate that conduction band convergence occurs at a compressive strain of −6% along the zigzag direction and results in an enhancement of ZT for p-type indium selenide at room temperature. Further enhancements occur at −7% as the valence bands similarly converge, reaching a maximum ZT value of 0.46, which is one of the largest monolayer InSe figures of merit recorded to date at room temperature. The importance of strain is directly reflected by the enhanced transport coefficients observed at strains nearing those which give rise to the band degeneracies we observe. -
ARTICLE Designing Isoelectronic Counterparts to Layered Group V Semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Toma´Nek*
ARTICLE Designing Isoelectronic Counterparts to Layered Group V Semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Toma´nek* Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States ABSTRACT In analogy to IIIÀV compounds, which have significantly broadened the scope of group IV semiconductors, we propose a class of IVÀVI compounds as isoelectronic counterparts to layered group V semiconductors. Using ab initio density functional theory, we study yet unrealized structural phases of silicon monosulfide (SiS). We find the black-phosphorus-like R-SiS to be almost equally stable as the blue-phosphorus-like β-SiS. Both R-SiS and β- SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds. KEYWORDS: silicon sulfide . isoelectronic . phosphorene . ab initio . electronic band structure wo-dimensional semiconductors of monosulfide (SiS). We use ab initio density Tgroup V elements, including phos- functional theory (DFT) to identify stable phorene and arsenene, have been allotropes and determine their equilibrium rapidly attracting interest due to their sig- geometry and electronic structure. We have nificant fundamental band gap, large den- identified two nearly equally stable allo- sity of states near the Fermi level, and high tropes, namely, the black-phosphorus-like and anisotropic carrier mobility.1À4 Combi- R-SiS and the blue-phosphorus-like β-SiS, nation of these properties places these and show their structure in Figure 1a and d. -
Bacterial Selenoproteins: a Role in Pathogenesis and Targets for Antimicrobial Development
University of Central Florida STARS Electronic Theses and Dissertations, 2004-2019 2009 Bacterial Selenoproteins: A Role In Pathogenesis And Targets For Antimicrobial Development Sarah Rosario University of Central Florida Part of the Medical Sciences Commons Find similar works at: https://stars.library.ucf.edu/etd University of Central Florida Libraries http://library.ucf.edu This Doctoral Dissertation (Open Access) is brought to you for free and open access by STARS. It has been accepted for inclusion in Electronic Theses and Dissertations, 2004-2019 by an authorized administrator of STARS. For more information, please contact [email protected]. STARS Citation Rosario, Sarah, "Bacterial Selenoproteins: A Role In Pathogenesis And Targets For Antimicrobial Development" (2009). Electronic Theses and Dissertations, 2004-2019. 3822. https://stars.library.ucf.edu/etd/3822 BACTERIAL SELENOPROTEINS: A ROLE IN PATHOGENESIS AND TARGETS FOR ANTIMICROBIAL DEVELOPMENT. by SARAH E. ROSARIO B.S. Florida State University, 2000 M.P.H. University of South Florida, 2002 A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the Burnett School of Biomedical Sciences in the College of Medicine at the University of Central Florida Orlando, Florida Summer Term 2009 Major Professor: William T. Self © 2009 Sarah E. Rosario ii ABSTRACT Selenoproteins are unique proteins in which selenocysteine is inserted into the polypeptide chain by highly specialized translational machinery. They exist within all three kingdoms of life. The functions of these proteins in biology are still being defined. In particular, the importance of selenoproteins in pathogenic microorganisms has received little attention. We first established that a nosocomial pathogen, Clostridium difficile, utilizes a selenoenzyme dependent pathway for energy metabolism.