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Quantum Well Hall Effect (QWHE) Sensors and Their Applications

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Quantum Well Hall Effect (QWHE) Sensors and Their Applications Quantum Well Hall Effect (QWHE) sensors and their applications M. Missous, FREng University of Manchester PAGE 1 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 INTRODUCTION Magnetic sensors are fundamental to engineering and the physical sciences and are indispensable components in many systems. To date, virtually all magnetic sensors are either single elements or a small array of elements operated simultaneously (e.g. 3 component devices or small linear arrays). At best, present technology provides point, area average, or 1-Dimensional (assuming some form of linear translation) measurement of what is in reality a 4-D vector field (3- D space and time). The ability to capture magnetic field data in more than one dimension would be of real value and would represent a major advance in the state of the art. Two dimensional arrays of the type proposed here would allow direct high speed vision of magnetic fields, which could have an immediate impact on critical systems, especially those used for inspection or monitoring purposes. PAGE 2 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 Principle of Hall Effect Sensing When a conductor carrying a current (I) is placed in a magnetic field (B) and oriented so that the current and magnetic field are at right angles, an electric field is produced in the conductor at right angles to both current and magnetic field and produce a Bz I Hall Voltage (Vh) given by: t Jy Jx Vh = Kh . B . I Vh K 1 h t.n.e L w Where the sensitivity Kh is given by: Fig. 1. Hall effect phenomenon t: Thickness n: Electron concentration e: Electron charge PAGE 3 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 Quantum Well Hall Effect sensors Fig.2 Formation of 2DEG Quantum Well at AlGaAs/InGaAs heterojunction 2 mm packaged sensor 2 µm to 70 µm GaAs-InGaAs-AlGaAs QWHE structure and Greek cross geometry with length to width ratio of 3. PAGE 4 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 SEMICONDUCTOR THIN FILM SYNTHESIS :MOLECULAR BEAM EPITAXY (MBE) MBE is the ultra high vacuum evaporation of a single crystal oriented overgrowth, from independently controlled constituent species. RELIES ON UHV TECHNOLOGY -12 • Ultra clean UHV (pp. O2, H2O, CO, CO2 << 1 x 10 Torr) PAGE 5 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 EPITAXY GaAs SUBSTRATE : 500 µm MBE LAYER : 1 µm YIELD : ~ 40,000 Hall Sensor die per 4” wafer : “All identical” Ga + As 1022 atoms cm-3 Si (or Be) 1016 atoms cm-3 • Purity : Better than parts per million • Uniformity : < 1% • Precision : < One atomic layer • Time for Deposition : ~ 1 hour PAGE 6 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 Hall Effect Devices Parameters/Limitations Offset Voltage: Sensitivity Piezoresistance Effect Current sensitivity Si Misalignment. V S h Noise i IB - 1/f Noise - Thermal noise Voltage sensitivity Sv Self Induced Magnetic Field w Sv h G (due to passage of applied current) L Frequency Limitation Linearity Restricted by relaxation time of Effect of Temperature the dielectric material >> GHz Joule Heating Ambient temperature PAGE 7 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 Magnetic Field Sensors Spectrum SQUIDs Nuclear precession magnetometer Search coil Magnetometers Fluxgate magnetometer GMR 2DEG dynamic range > 1010 and no saturation Commercial GaAs/Si Hall Effect sensor 2DEG Hall Effect sensor 10-6 10-3 10-2 10-1 1 10 102 103 104 105 Gauss 10-10 10-7 10-6 10-5 10-4 10-3 10-2 10-1 1 10 Tesla Fig.3. Magnetic field sensor spectrum PAGE 8 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 Solid State Magnetic Sensors : Field sensors and Flux sensors. The most sensitive magnetic sensors are Flux sensors but at the expense of size (Magnetic induction) Field sensors measure flux density rather than flux and thus sensitivity is independent of size. (Hall Effect, AMR and GMR) Field sensors have an inherent advantage in size and power when compared to search coils ,flux gates, and more sophisticated sensing techniques such as Superconducting Quantum Interference Detectors (SQUID). The sensing can be done in an extremely small, lithographically defined area increasing the resolution for fields that change over small distances and allows for packaging arrays of sensors in a small footprint. PAGE 9 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 As Hall effect devices are field sensors, their response does not depend on size, and thus micron sized elements can be fabricated. Due to their small size, these sensors can also be used to field mapping purpose, where a single sensor integrating several elements can be used. Furthermore the QWHE devices can also be fabricated into transistors therefore enabling integrated circuit configurations with nT/√Hz sensitivity (unlike GMR or AMR). Unlike Si integrated Hall sensors, the QWHE are radiation resistant and capable of operating in harsh environments ( ~ 200 °C) PAGE 10 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 Noise sources in a QWHE Sensor The noise in a typical semiconductor devices is given by : α is the Hooge parameter, E is the external electric field applied to the device, Gn is a geometrical correction factor, f is operating frequency, n2−D is the 2-D electron concentration, Ai,g−r is the amplitude of g−r noise, τi is a characteristic time constant of the generation-recombination process, kB is Boltzmann constant, T is ambient measurement temperature and R the sample resistance. PAGE 11 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 Noise sources at high frequencies Johnson or resistance noise, dominant above 1 to 10kHz, 1/2 Vn = (4kTBR) , in units of volts/(Sq-root Hz.) k is Boltzman’s constant, k = 1.38 x 10-23 Joule/Kelvin. B = Bandwidth in Hz. R = Resistance in Ohms. T = Temperature in degrees, K. (deg.K = deg.C + 273) The minimum B-field occurs when the S/N ratio is equal to 1 ie and hence k is Hall sensitivity and G is magnetic gain ( do not confuse with geometrical factor!). PAGE 12 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 NOISE MEASUREMENTS Current Source Fig. 4 Noise Measurements PAGE 13 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 NOISE CHARACTERISTICS Shot Noise Shot PreAmp : SRS560 DSA : Agilent35670A Current Source : OP27 Fig. 5 Noise characteristics (P2A) PAGE 14 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 Bmin CHARACTERISTICS P2A QWHE sensor ~ 1µT/ √Hz @ 0.1Hz and 5mA ~ 20 nT/√Hz @ 100kHz and 5mA Fig. 6 Minimum B-Field detection as a function of frequency PAGE 15 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 Single Sensor applications PAGE 16 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 1D Passive Magnetic Imaging : Bank Notes Scanning Using a scanning DC magnetic field mapping system, a £5 and £10 UK and €10 Euro bank notes were scanned. Position Scanning of £5, £10 UK and €10 bank Figure 7. Processing of scanned bank notes notes raw signals over metal strip , magnetic field strength ~ 5µT PAGE 17 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 2D passive magnetic imaging Magnetic disk scan of an 5 x 5 mm2 area, the tracks of the disk are displayed as vertical lines. Position Floppy disk scanning Figure 8. Cross section of red line , magnetic flux density variations ~ 10 µT PAGE 18 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 COMPARISONS WITH GMR and AMR PAGE 19 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 AMR and GMR sensors PAGE 20 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 AMR and GMR sensors Hall Voltage vs Magnetic Flux Density I=1mA 600 500 400 300 200 100 0 Hall Hall Voltage VH (mV) 0 100 200 300 400 500 600 Magnetic Flux Density B (mT) Die Size: 0.3 x 0.3 mm Die Size: 1.65 x 2.14 mm 40 times smaller than GMR Maximum operating Temp ~125 C Maximum operating Temp ~200 °C PAGE 21 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 AMR and GMR sensors Note : GMR uses FC up to x100 Red line: QWHE sensor Sensitivity (No FC) Fig. 9 GMR and QWHE sensors sensitivities PAGE 22 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 Combining Hall sensor and flux concentrator Achieves 100pT/sqrt(Hz) at 1Hz and 1pT/sqrt(Hz) at > 1kHz Magnetic gain ~ 500 20 cm P. Leroy et al Sensors and Actuators A 142 (2008) 503–510 PAGE 23 Quantum Well Hall Effect (QWHE) sensors and their applications RAL 12th March 2015 2 DEG Hall Effect Detection Sensitivity Detection sensitivity depends on two factors: (1) Scale factor in translating B (Tesla) to output signal voltage and (2) noise that competes with the signal. For 2DEG devices the scale factor is typically 1V/Tesla. The scale factor depends on bias current, which is limited by device dissipation to a few mW at maximum. Dissipation and noise depends on the device resistance. For our P2A sensor this gives a noise density of 3.4nV/root-Hz above 1kHz, rising at lower frequencies due to flicker noise.
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