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Optical and Electrical Study of the Rare Earth Doped III-Nitride Semiconductor Materials

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Optical and Electrical Study of the Rare Earth Doped III-Nitride Semiconductor Materials Optical and Electrical Study of the Rare Earth Doped III-nitride Semiconductor Materials A dissertation presented to the faculty of the Russ College of Engineering and Technology of Ohio University In partial fulfillment of the requirements for the degree Doctor of Philosophy Jingzhou Wang December 2016 © 2016 Jingzhou Wang. All Rights Reserved. 2 This dissertation titled Optical and Electrical Study of the Rare Earth Doped III-nitride Semiconductor Materials by JINGZHOU WANG has been approved for the School of Electrical Engineering and Computer Science and the Russ College of Engineering and Technology by Wojciech M. Jadwisienczak Associate Professor of Electrical Engineering and Computer Science Dennis Irwin Dean, Russ College of Engineering and Technology 3 ABSTRACT JINGZHOU WANG, Ph.D., December 2016, Electrical Engineering Optical and Electrical Study of the Rare Earth Doped III-nitride Semiconductor Materials Director of Dissertation: Wojciech M. Jadwisienczak The technological advantages of III-nitride semiconductors (III-Ns) have been demonstrated among others in the area of light emitting applications. Due to fundamental reasons limiting growth of InGaN with high Indium content, rare earth (RE) doped III-Ns provide an alternative way to achieve monolithic red, green, blue (RGB) emitters on the same III-Ns host material. However, the excitation efficiency of RE3+ ions in III-Ns is still insufficient due to the complexity of energy transfer processes involved. In this work, we consider the current understanding of the excitation mechanisms of RE3+ ions doped III- Ns, specifically Yb3+ and Eu3+ ions, and theories toward the excitation mechanism involving RE induced defects. In particular, we demonstrate and emphasize that the RE induced structural isovalent (RESI) trap model can be applied to explain the excitation mechanism of III-Ns:RE3+. Specifically, we have investigated the Yb3+ ion doped into III- Ns hosts having different morphologies. The observed emission peaks of Yb3+ ion were 3+ analyzed and fitted with theoretical calculations. The study of Yb ion doped InxGa1-xN nano-rod films with varied indium (In) concentration shown the improvement of luminescence quality from the nanorod due to the presence of Yb dopant. Then we report the optical spectroscopy and DLTS study toward an Eu and Si co-doped GaN and its control counterpart. The Laplace-DLTS and optical-DLTS system developed in this work improved spectrum resolution compared to the conventional DLTS. The high resolution L- 4 DLTS revealed at least four closely spaced defect levels associated with the Trap B, identified with regular DLTS, with activation energy 0.259±0.032 eV (Trap B1), 0.253±0.020 eV (Trap B2), 0.257±0.017 eV (Trap B3), and 0.268±0.025 eV (Trap B4) below the conduction band edge, respectively. Most importantly, a shallow hole trap was observed at energy 30±20 meV above the valence band edge of the GaN:Si,Eu3+ which can be attributed to the RESI hole trap. Furthermore, a study on the Eu3+ ion implanted In0.06Ga0.94N/GaN superlattices (SLs) is reported to illustrate the plausible way of improving the excitation efficiency of Eu3+ ion via material engineering. It was concluded that the presence of Eu3+ ion in SLs induces an additional compressive stress component modifying the piezoelectric field in SLs active layer giving rise to an extra freedom in material engineering process for efficient energy transfer from the SLs to the Eu3+ ion. 5 DEDICATION This work is dedicated to my father; Dajun Wang, and my mother; Meng Zhu. 6 ACKNOWLEDGMENTS First, I would like to thank my academic advisor, Dr. Wojciech M. Jadwisienczak for providing me the opportunity to work on his research projects. I appreciate his patient and worthwhile help during my Ph.D. study at Ohio University. The inspiration and encouragement he provided during all stages of my Ph.D. project were crucial and helpful. I also recognized the support by the National Science Foundation (NSF) CAREER Award under contact No. DMR-1056493 he has offered me during my study at Ohio University. I would like to express my acknowledgment to Dr. Ratnakar Palai from University of Puerto Rico and Dr. Yasufumi Fujiwara from Osaka University for providing research samples, Dr. Andre Anders from the Lawrence Berkeley National Laboratory for rare earth implantation services, and Dr. Mohammed Dammak of Université de Sfax for conducting crystal field calculations. I acknowledge the experimental support received from Dr. Martin Kordesch, Dr. David Ingram, Dr. Eric Stinaff, Dr. Savas Kaya and Dr. Faiz Rahman. In addition, I express my special appreciation to Dr. Darwin Thusius from Sula Technologies who provided helpful discussion and technical support on the DLTS equipment. Furthermore, I would like to express my appreciation to Dr. Martin Kordesch, Dr. Eric Stinaff, Dr. Savas Kaya, Dr. Kodi Avinash and Dr. Harsha Chenji for serving as my committee and giving me critical suggestions on my research and dissertation. In addition, I truly appreciate the help from my friends, Hiroki Tanaka, Jason Wright, Venkata Thota, Mohammed Bsatee and Kiran Dasari during my Ph.D. term at Ohio University. Finally, I appreciate my parents and grandparents for everything they did for me and their continuous supports of my study at Ohio University. 7 MAJOR PROJECT OUTCOMES The scientific, academic and professional outcomes generated during this project are shown below. Publication: (a) Major papers with results reported in this dissertation J. Wang, A. Koizumi, Y. Fujiwara, W. M. Jadwisienczak, “Optical and Electrical Study of Defects in GaN in situ doped with Eu3+ ion grown by OMVPE”, accepted by J. Electron. Mater. Sep. 2016. K. Dasari, B. Thapa, J. Wang, J. Wright, W. M. Jadwisienczak, and R. Palai, “MBE Grown InxGa1−xN Thin Films with Bright Visible Emission Centered at 550 nm,” J. Electron. Mater., vol. 45, no. 4, pp. 2071–2077, 2016. J. Wang, A. Koizumi, Y. Fujiwara, and W. M. Jadwisienczak, “Study of Defects in GaN In Situ Doped with Eu3+ Ion Grown by OMVPE,” J. Electron. Mater., vol. 45, no. 4, pp. 2001–2007, 2016. J. Wang, K. Dasari, K. Cooper, V. R. Thota, J. Wright, R. Palai, D. C. Ingram, E. A. Stinaff, S. Kaya, and W. M. Jadwisienczak, “Improved thermal stability and narrowed line width of photoluminescence from InGaN nanorod by ytterbium doping,” Phys. Status Solidi Curr. Top. Solid State Phys., vol. 12, no. 4–5, pp. 413– 417, 2015. K. Dasari, J. Wang, M. J. F. Guinel, W. M. Jadwisienczak, H. Huhtinen, R. Mundle, A. K. Pradhan, and R. Palai, “Visible photoluminescence and room temperature ferromagnetism in high In-content InGaN:Yb nanorods grown by molecular beam epitaxy,” J. Appl. Phys., vol. 118, no. 12, 2015. T. Kallel, M. Dammak, J. Wang, W. M. Jadwisienczak, J. Wu, and R. Palai, “Optical studies and crystal field calculation of GaN nanorods doped with Yb3+ ions,” J. Alloys Compd., vol. 609, no. 10, pp. 284–289, 2014. W. M. Jadwisienczak, R. Palai, J. Wang, H. Tanaka, J. Wu, A. Rivera, H. Huhtinen, and A. Anders, “Optical properties of ferromagnetic ytterbium-doped III-nitride epilayers,” Phys. Status Solidi Curr. Top. Solid State Phys., vol. 8, no. 7–8, pp. 2185–2187, 2011. W. M. Jadwisienczak, J. Wang, H. Tanaka, J. Wu, R. Palai, H. Huhtinen, and A. Anders, “Optical and magnetic properties of GaN epilayers implanted with ytterbium,” J. Rare Earths, vol. 28, no. 6, pp. 931–935, 2010. 8 (b) Contributions to other research projects J. Beltran-Huarac, D. Diaz-Diestra, M. Bsatee, J. Wang, W. M. Jadwisienczak, B. R. Weiner, and G. Morell, “Novel magneto-luminescent effect in LSMO/ZnS: Mn nanocomposites at near-room temperature,” Nanotechnology, vol. 27, no. 8, p. 085703, 2016. T. Kallel, T. Koubaa, M. Dammak, S. G. Pandya, M. E. Kordesch, J. Wang, W. M. Jadwisienczak, and Y. Wang, “Spectra, energy levels and crystal field calculation of Er3+ doped in AlN nanoparticles,” J. Lumin., vol. 171, no. March 2016, pp. 42–50, 2016. J. Beltran-Huarac, J. Palomino, O. Resto, J. Wang, W. M. Jadwisienczak, B. R. Weiner, and G. Morell, “Highly-crystalline γ-MnS nanosaws,” RSC Adv., vol. 4, p. 38103, 2014. A. Podhorodecki, L. W. Golacki, G. Zatryb, J. Misiewicz, J. Wang, W. Jadwisienczak, K. Fedus, J. Wojcik, P. R. J. Wilson, and P. Mascher, “Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition - Do we need silicon nanoclusters?” J. Appl. Phys., vol. 115, no. 14, p. 143510, 2014. T. Kallel, M. Dammak, J. Wang, and W. M. Jadwisienczak, “Raman characterization and stress analysis of AlN:Er3+ epilayers grown on sapphire and silicon substrates,” Mater. Sci. Eng. B, vol. 187, pp. 46–52, 2014. T. Kallel, T. Koubaa, M. Dammak, J. Wang, and W. M. Jadwisienczak, “Optical characterization and crystal field calculation of Er3+ in AlN epilayers,” J. Lumin., vol. 134, pp. 893–899, 2013. J. Beltran-Huarac, J. Wang, H. Tanaka, W. M. Jadwisienczak, B. R. Weiner, and G. Morell, “Stability of the Mn photoluminescence in bifunctional ZnS:0.05Mn nanoparticles,” J. Appl. Phys., vol. 114, no. 5, 2013. Conference presentations/posters on results presented in this dissertation: J. Wang, A. Koizumi, Y. Fujiwara, W. M. Jadwisienczak, “Deep Level Transient Spectroscopy Study of Eu3+ Ion In Situ Doped GaN Epilayer Grown by OMVPE”, the 58th Electronic Materials Conference, University of Delaware, Newark DE, Jun. 2016 J. Wang, A. Koizumi, Y. Fujiwara, W. M. Jadwisienczak, “Study of Defects in GaN in situ doped with Eu3+ ion grown by OMVPE”, 57th Electronic Materials Conference, Ohio State University, Columbus OH, Jun. 2015 9 J. Wang, V. R. Thota, E. A. Stinaff, W. M. Jadwisienczak, A. Anders, “Structural and Optical Studies of InGaN/GaN Superlattices Implanted with Eu Ions”, the 57th Electronic Materials Conference, Ohio State University, Columbus OH, Jun.
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