SiC Power Devices

vol.3

of November, 2013.

No.56P6733E 11.2013 1500SG The Industry's First Mass-Produced "Full SiC" Power Modules

ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.

In response to the growing demand for SiC products,

ROHM has implemented the world's first full-scale, mass production of next-generation SiC components.

Full SiC Power Module SiC - the next generation of compact, Lower power loss and ■Performance Comparison: SiC vs. Si high temperature operation in Breakdown Bandgap (eV) Thermal Electric Field (MV/cm) Conductivity (W/cm℃) energy-saving Eco Devices a smaller form factor Si 0.3 / SiC Si 1.1 / SiC Si 1.5 / SiC The demand for power is increasing on a global scale every year while In the power device field for power conversion 3.0 3.2 4.9 High voltage High temperature High heat fossil fuels continue to be depleted and global warming is growing at an alarming rate. and control, SiC (Silicon Carbide) is garnering Low ON-resistance operation (over 250ºC) dissipation This requires better solutions and more increased attention as a next-generation High-speed switching effective use of power and resources. semiconductor material due to its superior characteristics compared with silicon, including ROHM provides Eco Devices designed for lower power consumption ・Higher voltages & currents ・Smaller cooling systems lower ON-resistance, faster switching speeds, and high efficiency operation. These include highly integrated circuits ・Low conduction loss ・Higher power density and higher temperature operation. utilizing sophisticated, low power ICs, passive components, ・Reduced switching loss ・System miniaturization opto electronics and modules that save energy and reduce CO₂ emissions. Included are next-generation SiC devices that promise even lower power consumption and higher efficiency. Implementing SiC devices in a ■Power Loss Comparison variety of fields, including the Power Loss per Arm (W) power, automotive, 900 800 Conduction railway, industrial, 700 Power loss reduced by 47%, Loss 600 and consumer sectors ［w］ Switching loss decreased by 85% 500 400 Turn off loss Measurement Conditions SiC devices allow for smaller products with lower 300 ［w］ Tj=125℃ Turn on loss 200 600V power consumption that make mounting possible ［w］ 100 100A even in tight spaces. Additional advantages 0 Si(IGBT+FRD) SiC(MOSFET+SBD) include high voltage and high temperature operation, enabling stable operation under harsh conditions̶impossible with silicon-based products. ■long - term market forecast for SiC devices in various power applications In hybrid vehicles and EVs SiC power solutions 900 contribute to increased fuel economy and a 800 R&D / High T°/ Others larger cabin area, while in solar power generation 700 Ships & Vessels applications they improve power loss by 600 Smart Grid Power Rail traction 500 approximately 50%, contributing to reduced PV inverters +39%/year 400 Wind Turbine global warming. Motor AC Drive 300 UPS

market size(M$) EV / HEV 200 PFC +26%/year 100

0 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020

Market forecast for SiC power devices Source: Yole Développement

Power transmission Industrial equipment systems Servers Reduces power loss Consumer electronics Reduce power loss and size Reduce data center Energy-saving air power consumption by conditioners and IH cooktops minimizing server power loss Railway Reduce inverter size and weight

EV (i.e. hybrid/electric vehicles) Reduce cooling system size, decrease weight, and increase fuel economy Photovoltaics Increase power conditioner efficiency

03 SiC Power Devices SiC Power Devices 04 The industry's first mass-produced SiC makes the previously impossible ''possible'' SiC Power Device

Full SiC Power Module SiC MOSFET TO-247［3pin］

Mass Produced Mass Produced Switching loss reduced by 85% (max.) High speed switching with low ON- resistance

ROHM has developed low-surge-noise power modules SiC enables simultaneous high speed switching with low integrating SiC devices produced in-house, maximizing ON-resistance ‒ normally impossible with silicone-based high-speed performance. The result is significantly reduced products. Additional features include superior electric switching loss compared with conventional Si IGBTs. characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used. TO-220AB［3pin］

Features (BSM120D12P2C005) ■ Ideal replacement for Si IGBT modules Turn OFF Characteristics (Compared with 1200V-Class Products) ON-Resistance Temperature Characteristics (Compared with 650V-Class Products) ROHM SiC power modules reduce switching loss considerably, making them 1 Switching loss reduced by 85% (max.)* ideal for replacing Si IGBT modules (depending on the operating conditions). 25 12 Vdd=400V 20 Rg=5.6Ω Si IGBT (200A to 400A) Full SiC Power Module (120A) 10 2 50% less volume* Si MOSFET 15 Switching loss reduced 8 by 90% (max.) 3 High-speed switching 50% less 0.22 to 0.24 ohms volume 10 6 Low switching even at 120°C 21mm Si IGBT loss makes SiC the Current (A) 4 1200V rated voltage / 120A rated current ideal replacement 5 4 ON-Resistance（Ω） Si-Super Junction *Compared with conventional Si IGBT modules MOSFET 122mm 0 2 45.6mm SiC MOSFET SiC MOSFET

（BSM120D12P2C005） -5 0 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 Time (nsec) Temperature（℃） Switching Loss Comparison ■ Internal Circuit Diagram (Half Bridge Circuit)

BSM120D12P2C005 BSM180D12P2C101 60 Vds=600V 50 Id=100A Vg（on）=18V ■ Internal Circuit Diagram ■ Lineup Vg（off）=0V Si IGBT Module 40 Tj=125℃ (Competitor) Inductive load SCT Series SCH Series BVDSS 650V 1200V 400V 30 Drain Drain Package RDS (on）

Esw（mJ） 120mΩ 80mΩ 160mΩ 280mΩ 450mΩ 120mΩ 20 ■ Lineup Gate Gate TO-220AB Reduced 85% (max.) ̶ ̶ ̶ ̶ 10 ［3pin］ SCTMU001F SCT2120AF BVDSS 1200V Full SiC Power Module Package TO-247 SCH2080KE 0 ID 120A 180A ̶ ̶ 1 10 100 Source Source ［3pin］ SCT2160KE SCT2280KE SCT2450KE Gate resistance Rg（Ω） SCT2080KE Module BSM120D12P2C005 BSM180D12P2C101 MOSFET MOSFET SBD Reference values evaluated under the same conditions

05 SiC Power Devices SiC Power Devices 06 ROHM’s unique IC technology maximizes SiC characteristics DRIVER

SiC SBD (Schottky Barrier Diodes) Isolated Gate Driver

Mass Produced Under Development Significantly lower switching loss High-speed operation supports SiC

TO-220AC［2pin］ ・High-speed operation with a max. I/O delay time of 150ns SBDs were developed utilizing SiC, making them ideal for PFC circuits and ・Core-less transformer utilized for 2,500Vrms isolation inverters. Ultra-small reverse recovery time (impossible to achieve with silicon FRDs) ・Original noise cancelling technology results in high enables high-speed switching. This minimizes reverse recovery charge (Qrr), CMR (Common Mode Rejection). reducing switching loss considerably and contributes to end-product miniaturization. TO-247［3pin］ ・Supporting high VGS/negative voltage power supplies* *BM6101FV-C, Dual-Chip BM6104FV-C ・Compact package (6.5×8.1×2.01 mm) Switching Waveforms (SCS110AG)

12 SiC SBD ■ Recommended Operating Range (BM6101FV-C) 10

8 Parameter Symbol Min. Max. Unit 6 Switching loss TO-220FM［2pin］ Input Supply Voltage VCC1 4.5 5.5 V 4 reduced by 60% Output Supply Voltage VCC2 14 24 V 2 Current (A) 0 Output VEE Voltage VEE2 -12 0 V SSOP-B20W

-2 Si FRD LPTL［4pin］ Operating Temperature Range Ta -40 125 ℃ VR=400V -4 di/dt=350A/μsec -6 100 200 Time (nsec) ■ IPM Operating Waveforms (BM6101FV-C)

〈Conditions〉 ROHM SiC IPM VCC1＝5.0 VCC2＝18V VEE２＝-5V VPN＝800V Ta=25℃

2μs/div. ■ Lineup P 800V Stable operation SiC MOSFET ensured up to d 2nd Generation 800V/400A output g IN（10V/div.） IN Gate Driver 650V 1200V s 5V 18V SiC FET Gate（20V/div.） Package 6A 8A 10A 12A 15A 20A 30A 40A 5A 10A 15A 20A 30A 40A 5V SiC FET Drain（500V/div.） V SiC SBD TO-220AC［2pin］ SCS206AG SCS208AG SCS210AG SCS212AG SCS220AG ̶ ̶ SCS205KG SCS210KG SCS215KG SCS220KG ̶ ̶ Id（500A/div.） A SCS215AG N ■ Lineup TO-220FM［2pin］SCS206AM SCS208AM SCS210AM SCS212AM ̶ ̶ ̶ ̶ ̶ ̶ ̶ ̶ SCS215AM SCS220AM Features

Part No. Rated Output Isolation Negative Power I/O Delay Over current Mirror Clamp Soft Turn OFF Error Status DESAT Current (Peak) Voltage Supply Compatibility Time Detection Function Function Output TO-247［3pin］ ̶ ̶ ̶ ̶ ̶ SCS220AE2 SCS240AE2 ̶ SCS210KE2 ̶ SCS220KE2 SCS230AE2 SCS230KE2 SCS240KE2 BM6101FV-C 3.0A 2,500Vrms ○ 350ns ○ ○ ○ ○ ○

BM6102FV-C 3.0A 2,500Vrms ̶ 200ns ○ ○ ○ ○ ○ LPTL［4pin］ ̶ ̶ ̶ ̶ ̶ ̶ ̶ ̶ SCS206AJ SCS208AJ SCS210AJ SCS212AJ SCS215AJ SCS220AJ BM6104FV-C 3.0A 2,500Vrms ○ 150ns ○ ○ ○ ○ ○

07 SiC Power Devices SiC Power Devices 08 Nürnberg High quality ensured through DISCRETE a consistent production system Diodes Transistors SiCrystal AG, the largest SiC monocrystal wafer manufacturer in Europe, Quality First is ROHM’s official corporate policy. In this regard became a member of the ROHM Group in 2009. a consistent production system was established for SiC SiCrystal was established in 1997 in Germany based on a SiC production. The acquisition of SiCrystal (Germany) in 2009 monocrystal growth technology development project launched in 1994. has allowed ROHM to perform the entire manufacturing Mass production and supply of SiC wafers began in 2001. process, from wafer processing to package manufacturing, In 2012, SiCrystal relocated to a new plant in Nüremberg to increase production capacity. in-house. This not only ensures stable production and With the corporate philosophy "Stable Quality", SiCrystal has adopted unmatched quality, but lowers cost competitiveness and an integrated wafer production system from raw SiC material to crystal growth, enables the development of new products. wafer processing, and inspection, and in 1999 was granted ISO9001 certification.

ASSYLINE ■ Manufactured Product: SiC Wafers In-house production equipment High quality, high volume, and stable manufacturing are guaranteed utilizing in-house production equipment.

150mm MODULES 100mm （6inch） Low inductance module 100% in-house production system （4inch） WAFER A low inductance module utilizing 2inch 3inch SiC’s high-speed characteristics PROCESS was developed SiC processes Mass Production Preparing for mass production Acquired ISO9001 Certification High quality lines integrating SiC’s unique processes are utilized.

■ SiC Wafer Production

Advanced Crystallization Technology SiC ingots are produced via a crystal growth process utilizing a sublimation method called "Rayleigh's method" that sublimates SiC powder and recrystallizes it under cold temperatures. Compared with conventional Si ingots which are crystalized in the liquid phase from Si melt, the growth rate using the sublimation method is slow, making crystal defects likely to occur, and therefore requires precision technology for crystal control. SiCrystal utilizes advanced crystallization technology to produce stable quality wafers.

ON SITE PLANT Insulating Cutting-edge, self-sufficient Material Seed For SiC: For Si: manufacturing facility Crystal In addition to in-house power Temperature: 2,000 to 2,400°C Temperature: 1,230 to 1,260°C generation, all materials required for Principle: Transports sublimated gas to the Principle: Liquid-phase growth during which Si manufacturing, such as hydrogen, surface of the seed crystal by a melt is solidified on the seed crystal. oxygen, and nitrogen, are included heat gradient in order to recrystallize This method is characterized by fast CHIP DESIGN on site. SiC High quality design Powder it. Crystal control is difficult and the crystal growth. Master engineers are on hand growth rate is slow compared with to ensure high quality designs. liquid phase growth. Water-Cooled Crucible Coils CAD In-house photo masking Enabling uniform quality control from SiC chip design to photo masking

1. Crystal 2. External polishing 3. Flat 4. Slicing 5. Sanding / SiC Wafer growth formation Edge polishing / Cleaning WAFER SiC wafer manufacturing ROHM acquired SiCrystal (a German SiC substrate manufacturer), resulting in stable supply of high-quality SiC substrates.

09 SiC Power Devices SiC Power Devices 10 Research & Development Development of high temperature operation (Tj=225°C) transfer mold modules

ROHM has developed SiC modules capable of operating at thigh temperatures for inverter driving in automotive systems and industrial devices. These transfer mold modules are the first in the industry to ensure stable operation up to 225℃ while maintaining the compact, low-cost package configurations commonly used in current Si devices. This contributes to wide compatibility and ensures ready adoption. Modules incorporating 6 devices and featuring 1200V/300A operation at temperatures up to 225℃ are available.

■ Future solutions for high temperature operation

High temperature SiC gate drivers Gate drivers using SOI wafers are currently under development. They are expected to achieve higher speeds with lower power consumption.

SiC high temperature devices Compact Operation has been verified above 200ºC. Evaluating reliability at high High temperatures is the next step. temperature

High temperature capacitors High Devices featuring new materials and High temperature operation, power designs are currently being developed high voltage IPM with higher temperature capability. (Intelligent Power Module) High High temperature, high voltage efficiency High temperature devices manufactured in-house packaging technology combined with original high heat Unique technology was used to develop high temperature resistant packaging technology. packaging suitable for SiC devices.

State-of-the-art industry-academia R&D collaboration Proprietary technology makes it possible to New develop ultra-compact large current SiC IPMs. TOPICS ROHM is actively involved in partnerships with major universities in a variety of fields in order to share expertise, cultivate new technologies, and collaborate on breakthrough R&D. ROHM, in collaboration with major motor manufacturers, is focused on developing SiC modules for next-generation vehicle motors that utilize a number of compact products developed in-house, from Development of High performance SiC MOSFET with gate driver ICs to transistors, diodes, and resistors. Previously, no electronic devices could be built into motors due to the extreme temperatures. However, mass-produced SiC epitaxial High-k gate is currently under development ROHM SiC module technology allows compact integration of electronic components within the motor, growth equipment Osaka University × Kyoto University × Tokyo Electron × ROHM making it possible to produce high efficiency motors with built-in inverters. Kyoto University × Tokyo Electron × ROHM Characteristics improvement An ultra-compact large current SiC IPM has been realized by attaching a high-temperature-resistant micro-mold-type SiC module directly to a cooler. 3-institution technological based on new materials, 1.5 Company collaboration enables rapid times the breakdown voltage, Significantly downsizing of the inverter development of high-quality 90% lower leakage current SiC devices Developed the industry’s first SiC Tokyo Electron In 2007 ROHM, along with Kyoto Trench MOSFET utilizing an 1/10 th the volume of Si(IGBT) University and Tokyo Electron, aluminum oxynitride (AION) layer Power Module 115mm conventional Si inverters Water Cooled Heat Sink developed mass production SiC on the gate insulating film. The High performance 16mm

40mm epitaxial growth equipment that can result is 1.5x the breakdown SiC MOSFET is Radiator processes multiple SiC wafers in a voltage and 90% lower leakage currently under Osaka University Air Cooled Heat Sink Only this size of development Kyoto University Water Pump SiC Power Module single operation. Fast development current vs. conventional thermally Power module was made possible by efficiently oxidized films (SiO2) for greater can drive 60kW University sharing technologies. These new reliability with lower loss. Expected class motor equipment are currently used for to find wide adoption in electric Si(IGBT) Power Module Reservoir Tank SiC Power Module mass producing ROHM SiC devices. vehicles, industrial equipment, and Water Cooled System Air Cooled System ROHM trains in the near future. Conventional HEV

11 SiC Power Devices SiC Power Devices 12 Focusing on cutting-edge SiC technology and leading the industry through innovative R&D

ROHM has been focused on developing SiC for use as a material for next-generation power devices for years, collaborating with universities and end-users in order to cultivate technological know-how and expertise. This culminated in Japan's first mass-produced Schottky barrier diodes in April 2010 and the industry’s first commercially available SiC transistors (MOSFET) in December. And in March 2012 ROHM unveiled the industry's first mass production of Full SiC Power Modules.

SiC Technology Breakthroughs H i s t o r y

Max Temp = 250.8℃

80% Duty Cycle

20% Duty Cycle ❶ ❷ SiC Eco Devices 2002 2005 2007 2008 Reducing environmental load

Begin preliminary experiments Ship SiC MOSFET samples ROHM, along with Kyoto Develop a new type of SiC Honda R&D Co., Ltd. and with SiC MOSFETs (Nov 2005) University and Tokyo Electron, diode with Nissan Motors ROHM test prototype SiC (Jun 2002) announce the development of (Apr 2008) power modules for hybrid Announce the development SiC epi film mass-production vehicles ❶ SiC power devices deliver superior energy savings. Develop SiC MOSFET prototypes of SiC MOSFETs with the technology Release trench-type MOSFETs (Sep 2008) (Dec 2004) industry’s smallest ON-resistance (Jun 2007) featuring the industry’s smallest ROHM is expanding its lineup of SiC power devices with (3.1mΩcm²) ON-resistance: 1.7mΩcm² ROHM tests prototype high (Mar 2006) Trial manufacture of large (Sep 2008) temperature operation power current (300A) SiC MOSFETs modules that utilize SiC elements innovative new products that minimize power consumption in and SBDs (Schottky Barrier Nissan Motors conducts a and introduces a demo capable Diodes) driving experiment of a fuel-cell of operation at 250 ºC ❷ order to reduce greenhouse gas emissions and lessen (Dec 2007) vehicle equipped with an (Oct 2008) inverter using ROHM's SiC diode environmental impact. (Sep 2008)

❸ ❹ ❺ ❻

2009 2010 2011 2012

The ROHM Group acquires Establish an integrated SiC Successfully develop the Develop the industry's first Launch the industry's first SiCrystal, an SiC wafer device production system. industry's first SiC power transfer mold SiC power modules mass production of ''Full SiC'' manufacturer ❸ Begin mass production of modules containing trench capable of high temperature power modules with SiC (Jul 2009) SiC SBDs ❹ MOSFETs and SBDs that can operation (up to 225°C) ❺ SBDs and SiC MOSFETs ❻ (Apr 2010) be integrated into motors (Oct 2011) (Mar 2012) Develop the industry’s first (Oct 2010) high current low resistance APEI Inc. (Arkansas Power Begin mass production of SiC trench MOSFET Begin mass production of Electronics International) and SiC-MOS Module (Oct 2009) SiC MOSFETs ROHM develop high-speed, (Dec 2012) (Dec 2010) high-current (1000A-class) SiC trench MOS modules (Oct 2011)

13 SiC Power Devices SiC Power Devices

vol.3

of November, 2013.

No.56P6733E 11.2013 1500SG Mouser Electronics

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