SiC Power Devices vol.3 of November, 2013. No.56P6733E 11.2013 1500SG The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices. In response to the growing demand for SiC products, ROHM has implemented the world's first full-scale, mass production of next-generation SiC components. Full SiC Power Module SiC - the next generation of compact, Lower power loss and ■Performance Comparison: SiC vs. Si high temperature operation in Breakdown Bandgap (eV) Thermal Electric Field (MV/cm) Conductivity (W/cm℃) energy-saving Eco Devices a smaller form factor Si 0.3 / SiC Si 1.1 / SiC Si 1.5 / SiC The demand for power is increasing on a global scale every year while In the power device field for power conversion 3.0 3.2 4.9 High voltage High temperature High heat fossil fuels continue to be depleted and global warming is growing at an alarming rate. and control, SiC (Silicon Carbide) is garnering Low ON-resistance operation (over 250ºC) dissipation This requires better solutions and more increased attention as a next-generation High-speed switching effective use of power and resources. semiconductor material due to its superior characteristics compared with silicon, including ROHM provides Eco Devices designed for lower power consumption ・Higher voltages & currents ・Smaller cooling systems lower ON-resistance, faster switching speeds, and high efficiency operation. These include highly integrated circuits ・Low conduction loss ・Higher power density and higher temperature operation. utilizing sophisticated, low power ICs, passive components, ・Reduced switching loss ・System miniaturization opto electronics and modules that save energy and reduce CO₂ emissions. Included are next-generation SiC devices that promise even lower power consumption and higher efficiency. Implementing SiC devices in a ■Power Loss Comparison variety of fields, including the Power Loss per Arm (W) power, automotive, 900 800 Conduction railway, industrial, 700 Power loss reduced by 47%, Loss 600 and consumer sectors ［w］ Switching loss decreased by 85% 500 400 Turn off loss Measurement Conditions SiC devices allow for smaller products with lower 300 ［w］ Tj=125℃ Turn on loss 200 600V power consumption that make mounting possible ［w］ 100 100A even in tight spaces. Additional advantages 0 Si(IGBT+FRD) SiC(MOSFET+SBD) include high voltage and high temperature operation, enabling stable operation under harsh conditions̶impossible with silicon-based products. ■long - term market forecast for SiC devices in various power applications In hybrid vehicles and EVs SiC power solutions 900 contribute to increased fuel economy and a 800 R&D / High T°/ Others larger cabin area, while in solar power generation 700 Ships & Vessels applications they improve power loss by 600 Smart Grid Power Rail traction 500 approximately 50%, contributing to reduced PV inverters +39%/year 400 Wind Turbine global warming. Motor AC Drive 300 UPS market size(M$) EV / HEV 200 PFC +26%/year 100 0 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 Market forecast for SiC power devices Source: Yole Développement Power transmission Industrial equipment systems Servers Reduces power loss Consumer electronics Reduce power loss and size Reduce data center Energy-saving air power consumption by conditioners and IH cooktops minimizing server power loss Railway Reduce inverter size and weight EV (i.e. hybrid/electric vehicles) Reduce cooling system size, decrease weight, and increase fuel economy Photovoltaics Increase power conditioner efficiency 03 SiC Power Devices SiC Power Devices 04 The industry's first mass-produced SiC makes the previously impossible ''possible'' SiC Power Device Full SiC Power Module SiC MOSFET TO-247［3pin］ Mass Produced Mass Produced Switching loss reduced by 85% (max.) High speed switching with low ON- resistance ROHM has developed low-surge-noise power modules SiC enables simultaneous high speed switching with low integrating SiC devices produced in-house, maximizing ON-resistance ‒ normally impossible with silicone-based high-speed performance. The result is significantly reduced products. Additional features include superior electric switching loss compared with conventional Si IGBTs. characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used. TO-220AB［3pin］ Features (BSM120D12P2C005) ■ Ideal replacement for Si IGBT modules Turn OFF Characteristics (Compared with 1200V-Class Products) ON-Resistance Temperature Characteristics (Compared with 650V-Class Products) ROHM SiC power modules reduce switching loss considerably, making them 1 Switching loss reduced by 85% (max.)* ideal for replacing Si IGBT modules (depending on the operating conditions). 25 12 Vdd=400V 20 Rg=5.6Ω Si IGBT (200A to 400A) Full SiC Power Module (120A) 10 2 50% less volume* Si MOSFET 15 Switching loss reduced 8 by 90% (max.) 3 High-speed switching 50% less 0.22 to 0.24 ohms volume 10 6 Low switching even at 120°C 21mm Si IGBT loss makes SiC the Current (A) 4 1200V rated voltage / 120A rated current ideal replacement 5 4 ON-Resistance（Ω） Si-Super Junction *Compared with conventional Si IGBT modules MOSFET 122mm 0 2 45.6mm SiC MOSFET SiC MOSFET （BSM120D12P2C005） -5 0 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 Time (nsec) Temperature（℃） Switching Loss Comparison ■ Internal Circuit Diagram (Half Bridge Circuit) BSM120D12P2C005 BSM180D12P2C101 60 Vds=600V 50 Id=100A Vg（on）=18V ■ Internal Circuit Diagram ■ Lineup Vg（off）=0V Si IGBT Module 40 Tj=125℃ (Competitor) Inductive load SCT Series SCH Series BVDSS 650V 1200V 400V 30 Drain Drain Package RDS (on） Esw（mJ） 120mΩ 80mΩ 160mΩ 280mΩ 450mΩ 120mΩ 20 ■ Lineup Gate Gate TO-220AB Reduced 85% (max.) ̶ ̶ ̶ ̶ 10 ［3pin］ SCTMU001F SCT2120AF BVDSS 1200V Full SiC Power Module Package TO-247 SCH2080KE 0 ID 120A 180A ̶ ̶ 1 10 100 Source Source ［3pin］ SCT2160KE SCT2280KE SCT2450KE Gate resistance Rg（Ω） SCT2080KE Module BSM120D12P2C005 BSM180D12P2C101 MOSFET MOSFET SBD Reference values evaluated under the same conditions 05 SiC Power Devices SiC Power Devices 06 ROHM’s unique IC technology maximizes SiC characteristics DRIVER SiC SBD (Schottky Barrier Diodes) Isolated Gate Driver Mass Produced Under Development Significantly lower switching loss High-speed operation supports SiC TO-220AC［2pin］ ・High-speed operation with a max. I/O delay time of 150ns SBDs were developed utilizing SiC, making them ideal for PFC circuits and ・Core-less transformer utilized for 2,500Vrms isolation inverters. Ultra-small reverse recovery time (impossible to achieve with silicon FRDs) ・Original noise cancelling technology results in high enables high-speed switching. This minimizes reverse recovery charge (Qrr), CMR (Common Mode Rejection). reducing switching loss considerably and contributes to end-product miniaturization. TO-247［3pin］ ・Supporting high VGS/negative voltage power supplies* *BM6101FV-C, Dual-Chip BM6104FV-C ・Compact package (6.5×8.1×2.01 mm) Switching Waveforms (SCS110AG) 12 SiC SBD ■ Recommended Operating Range (BM6101FV-C) 10 8 Parameter Symbol Min. Max. Unit 6 Switching loss TO-220FM［2pin］ Input Supply Voltage VCC1 4.5 5.5 V 4 reduced by 60% Output Supply Voltage VCC2 14 24 V 2 Current (A) 0 Output VEE Voltage VEE2 -12 0 V SSOP-B20W -2 Si FRD LPTL［4pin］ Operating Temperature Range Ta -40 125 ℃ VR=400V -4 di/dt=350A/μsec -6 100 200 Time (nsec) ■ IPM Operating Waveforms (BM6101FV-C) 〈Conditions〉 ROHM SiC IPM VCC1＝5.0 VCC2＝18V VEE２＝-5V VPN＝800V Ta=25℃ 2μs/div. ■ Lineup P 800V Stable operation SiC MOSFET ensured up to d 2nd Generation 800V/400A output g IN（10V/div.） IN Gate Driver 650V 1200V s 5V 18V SiC FET Gate（20V/div.） Package 6A 8A 10A 12A 15A 20A 30A 40A 5A 10A 15A 20A 30A 40A 5V SiC FET Drain（500V/div.） V SiC SBD TO-220AC［2pin］ SCS206AG SCS208AG SCS210AG SCS212AG SCS220AG ̶ ̶ SCS205KG SCS210KG SCS215KG SCS220KG ̶ ̶ Id（500A/div.） A SCS215AG N ■ Lineup TO-220FM［2pin］SCS206AM SCS208AM SCS210AM SCS212AM ̶ ̶ ̶ ̶ ̶ ̶ ̶ ̶ SCS215AM SCS220AM Features Part No. Rated Output Isolation Negative Power I/O Delay Over current Mirror Clamp Soft Turn OFF Error Status DESAT Current (Peak) Voltage Supply Compatibility Time Detection Function Function Output TO-247［3pin］ ̶ ̶ ̶ ̶ ̶ SCS220AE2 SCS240AE2 ̶ SCS210KE2 ̶ SCS220KE2 SCS230AE2 SCS230KE2 SCS240KE2 BM6101FV-C 3.0A 2,500Vrms ○ 350ns ○ ○ ○ ○ ○ BM6102FV-C 3.0A 2,500Vrms ̶ 200ns ○ ○ ○ ○ ○ LPTL［4pin］ ̶ ̶ ̶ ̶ ̶ ̶ ̶ ̶ SCS206AJ SCS208AJ SCS210AJ SCS212AJ SCS215AJ SCS220AJ BM6104FV-C 3.0A 2,500Vrms ○ 150ns ○ ○ ○ ○ ○ 07 SiC Power Devices SiC Power Devices 08 Nürnberg High quality ensured through DISCRETE a consistent production system Diodes Transistors SiCrystal AG, the largest SiC monocrystal wafer manufacturer in Europe, Quality First is ROHM’s official corporate policy. In this regard became a member of the ROHM Group in 2009. a consistent production system was established for SiC SiCrystal was established in 1997 in Germany based on a SiC production. The acquisition of SiCrystal (Germany) in 2009 monocrystal growth technology development project launched in 1994. has allowed ROHM to perform the entire manufacturing Mass production and supply of SiC wafers began in 2001. process, from wafer processing to package manufacturing, In 2012, SiCrystal relocated to a new plant in Nüremberg to increase production capacity. in-house. This not only ensures stable production and With the corporate philosophy "Stable Quality", SiCrystal has adopted unmatched quality, but lowers cost competitiveness and an integrated wafer production system from raw SiC material to crystal growth, enables the development of new products. wafer processing, and inspection, and in 1999 was granted ISO9001 certification. ASSYLINE ■ Manufactured Product: SiC Wafers In-house production equipment High quality, high volume, and stable manufacturing are guaranteed utilizing in-house production equipment.