Twistronics: a Turning Point in 2D Quantum Materials Abstract
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Allan Hugh Macdonald Date and Place of Birth
10/31/2014 CURRICULUM VITAE ALLAN H. MACDONALD Full name: Allan Hugh MacDonald Date and place of birth: December 1, 1951 Antigonish, Nova Scotia, Canada Citizenships: Canadian and American Present address: 2519 Harris Boulevard Austin, Texas 78703 USA Phone (512) 495-9192 Institutional affiliation: The University of Texas at Austin Austin, Texas 78712 Phone (512) 232-9113 FAX (512) 471-9621 e-mail: [email protected] Title: Sid W. Richardson Foundation Regents Chair Field of Specialization: Condensed Matter Theory Employment: September 1973 -- April 1978 Ph.D. Student University of Toronto May 1978 -- October 1980 Research Associate --- National Research Council November 1980 -- June 1982 Assistant Research Officer -- National Research Council of Canada August 1982 -- August 1987 Associate Research Officer --- National Research Council of Canada September 1987 -- August 1992 Professor of Physics --- Indiana University September 1992 -- August 2000 Distinguished Professor of Physics --- Indiana University September 2000 -- present Sid W. Richardson Foundation Regents Chair --- The University of Texas at Austin 1 10/31/2014 Scholarships and Honors: President's Scholarship, St. Francis Xavier University, 1969–1973 Governor-General's Medal, St. Francis Xavier University, 1973 (Highest academic standing in graduating class) NSERC 1967 Science Scholarship, University of Toronto, 1973–1977 Herzberg Medal, 1987 (Awarded by the Canadian Association of Physicists) Fellow of the American Physical Society, 1989 Sid W. Richardson Foundation Regents -
Alternate History – Alternate Memory: Counterfactual Literature in the Context of German Normalization
ALTERNATE HISTORY – ALTERNATE MEMORY: COUNTERFACTUAL LITERATURE IN THE CONTEXT OF GERMAN NORMALIZATION by GUIDO SCHENKEL M.A., Freie Universität Berlin, 2006 A THESIS SUBMITTED IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY in THE FACULTY OF GRADUATE STUDIES (German Studies) THE UNIVERSITY OF BRITISH COLUMBIA (Vancouver) April 2012 © Guido Schenkel, 2012 ABSTRACT This dissertation examines a variety of Alternate Histories of the Third Reich from the perspective of memory theory. The term ‘Alternate History’ describes a genre of literature that presents fictional accounts of historical developments which deviate from the known course of hi story. These allohistorical narratives are inherently presentist, meaning that their central question of “What If?” can harness the repertoire of collective memory in order to act as both a reflection of and a commentary on contemporary social and political conditions. Moreover, Alternate Histories can act as a form of counter-memory insofar as the counterfactual mode can be used to highlight marginalized historical events. This study investigates a specific manifestation of this process. Contrasted with American and British examples, the primary focus is the analysis of the discursive functions of German-language counterfactual literature in the context of German normalization. The category of normalization connects a variety of commemorative trends in postwar Germany aimed at overcoming the legacy of National Socialism and re-formulating a positive German national identity. The central hypothesis is that Alternate Histories can perform a unique task in this particular discursive setting. In the context of German normalization, counterfactual stories of the history of the Third Reich are capable of functioning as alternate memories, meaning that they effectively replace the memory of real events with fantasies that are better suited to serve as exculpatory narratives for the German collective. -
Moiré Band Topology in Twisted Bilayer Graphene
Moiré Band Topology in Twisted Bilayer Graphene Chao Ma, † Qiyue Wang, ‡ Scott Mills,§ Xiaolong Chen, †# Bingchen Deng, † Shaofan Yuan, † Cheng Li, † Kenji Watanabe, || Takashi Taniguchi, || Du Xu, *§ Fan Zhang, *‡ and Fengnian Xia*† †Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA ‡Department of Physics, The University of Texas at Dallas, Richardson, TX 7508, USA §Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY11794, USA ||National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 1 ABSTRACT Recently twisted bilayer graphene (t-BLG) emerges as a new strongly correlated physical platform near a magic twist angle, which hosts many exciting phenomena such as the Mott-like insulating phases, unconventional superconducting behavior and emergent ferromagnetism. Besides the apparent significance of band flatness, band topology may be another critical element in determining strongly correlated twistronics yet receives much less attention. Here we report compelling evidence for nontrivial noninteracting band topology of t-BLG moiré Dirac bands through a systematic nonlocal transport study, in conjunction with an examination rooted in K- theory. The moiré band topology of t-BLG manifests itself as two pronounced nonlocal responses in the electron and hole superlattice gaps. We further show that the nonlocal responses are robust to the interlayer electric field, twist angle, and edge termination, exhibiting a universal scaling law. While an unusual symmetry of t-BLG trivializes Berry curvature, we elucidate that two Z2 invariants characterize the topology of the moiré Dirac bands, validating the topological edge origin of the observed nonlocal responses. Our findings not only provide a new perspective for understanding the emerging strongly correlated phenomena in twisted van der Waals heterostructures, but also suggest a potential strategy to achieve topologically nontrivial metamaterials from topologically trivial quantum materials based on twist engineering. -
Workshop on Computational Physics and Materials Science
Workshop on Computational Physics and Materials Science: Total Energy and Force Methods 2020 Donostia-San Sebastián, Spain January 8-10, 2020 Institutional support and funding Preface This workshop is organized within the well-established “Total Energy and Force” conference series, which is held at ICTP in Trieste every odd year, and at a different place in the world every even year. The previous most recent workshops of this series outside Trieste took place in Barcelona (2012), Lausanne (2014), Luxembourg (2016) and Cambridge (2018). The main objective of this event is to identify new developments and topics in the field of electronic-structure methods from the first-principles perspective, their diverse applications, and its mathematical foundations. As such, it provides a great opportunity to assemble a wide range of leading scientists working on different aspects of computational material science. The workshop aims to cover the following topics: • Electron-phonon • Dielectrics • 2D materials • Correlation effects • Superconductivity • Topological materials • Transport properties • Excitations Organizing committee • Aran Garcia-Lekue, DIPC • Ivo Souza, UPV/EHU • Ion Errea, UPV/EHU Scientific advisory board • O. Akin-Ojo, University of Ibadan • E. Artacho, University of Cambridge & Nanogune • W. Andreoni, Ecole Polytechnique Fédérale de Lausanne • S. Biermann, Ecole Polytechnique, Palaiseau • R. Car, Princeton University • C. Filippi, University of Twente • M. Finnis, Imperial College • R. Gebauer, International Centre for Theoretical Physics • X.-G. Gong, Fudan University • J. Ihm, Seoul National University • E. Koch, Forschungszentrum Jülich • G. Kresse, University of Vienna • R. M. Martin, Stanford University • F. Mauri, University “La Sapienza” • A. Mostofi, Imperial College London • S. Narasimhan, JNCASR Bangalore • J. B. -
Exploring the Electrical Properties of Twisted Bilayer Graphene
Linfield University DigitalCommons@Linfield Senior Theses Student Scholarship & Creative Works 5-2019 Exploring the Electrical Properties of Twisted Bilayer Graphene William Shannon Linfield College Follow this and additional works at: https://digitalcommons.linfield.edu/physstud_theses Part of the Condensed Matter Physics Commons, Energy Systems Commons, Engineering Physics Commons, Materials Science and Engineering Commons, and the Power and Energy Commons Recommended Citation Shannon, William, "Exploring the Electrical Properties of Twisted Bilayer Graphene" (2019). Senior Theses. 45. https://digitalcommons.linfield.edu/physstud_theses/45 This Thesis (Open Access) is protected by copyright and/or related rights. It is brought to you for free via open access, courtesy of DigitalCommons@Linfield, with permission from the rights-holder(s). Your use of this Thesis (Open Access) must comply with the Terms of Use for material posted in DigitalCommons@Linfield, or with other stated terms (such as a Creative Commons license) indicated in the record and/or on the work itself. For more information, or if you have questions about permitted uses, please contact [email protected]. Exploring the Electrical Properties of Twisted Bilayer Graphene William Shannon A THESIS Presented to the Department of Physics LINFIELD COLLEGE McMinnville, Oregon In partial fulfillment of the requirements for the Degree of BACHELOR OF SCIENCE May, 2019 THESIS COPYRIGHT PERMISSIONS Pleaseread this document carefully before signing. If you have questions about any of these permissions,please contact the DigitalCommonsCoordinator. Title of the Thesis: Exploring the Electrical Properties of Twisted Bilayer Graphene Author's Name: (Last name, first name) Shannon, William111 Advisor's Name DigitalCommons@Linfield(DC@L) is our web-based, open access-compliantinstitutional repository for digital content produced by Linfield faculty, students, staff, and their collaborators. -
Critical Point for Bose–Einstein Condensation of Excitons in Graphite
Critical point for Bose–Einstein condensation of excitons in graphite Jinhua Wanga,b , Pan Niea,b , Xiaokang Lia,b, Huakun Zuoa,b, Benoˆıt Fauque´ c, Zengwei Zhua,b,1 , and Kamran Behniad aWuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China; bSchool of Physics, Huazhong University of Science and Technology, Wuhan 430074, China; cJeunes Equipes´ de l’Institut de Physique, Unite´ Mixte de Service et de Recherche 3573, CNRS, College` de France, Paris Sciences et Lettres Research University, 75231 Paris Cedex 05, France; and dLaboratoire de Physique et d’Etude´ des Materiaux,´ CNRS, Ecole´ Superieure´ de Physique et de Chimie Industrielles Paris, Paris Sciences et Lettres Research University, 75005 Paris, France Edited by Zachary Fisk, University of California, Irvine, CA, and approved October 15, 2020 (received for review June 22, 2020) An exciton is an electron–hole pair bound by attractive Coulomb nature of EI unexpected in the alternative Peierls-driven charge interaction. Short-lived excitons have been detected by a vari- density wave (CDW) (9). Other indirect signatures of BEC ety of experimental probes in numerous contexts. An excitonic transition have been reported in two-dimensional systems, such insulator, a collective state of such excitons, has been more elu- as quantum wells (11), graphene (12–14), and transition metal sive. Here, thanks to Nernst measurements in pulsed magnetic dichalcogenides heterostructures (15, 16). fields, we show that in graphite there is a critical temperature Here, we present the case of graphite subject to strong mag- (T = 9.2 K) and a critical magnetic field (B = 47 T) for Bose–Einstein netic field where the existence of a thermodynamic phase transi- condensation of excitons. -
Graphene and 2DM Online Conference (GO2020): Fundamental Research Insights
Fundamental Research Insights JULY 07, 2020 Aachen Graphene & 2D-Materials Center From basic research to innovation Digital Hardware ■ Electronics for neuromorphic computing ■ Sensor technology for autonomous driving and IoT ■ Optoelectronics for high speed data communication ■ Electronics for wearables and implantables AMO AMO GmbH Otto-Blumenthal-Straße 25 ■ D-52074 Aachen ■ Germany Phone +49 241 88 67-125 ■ Fax +49 241 88 67-571 [email protected] ■ www.amo.de F OREWORD On behalf of the Organising Committee we take great pleasure in welcoming you for the 1st edition of the Graphene and 2DM Online Conference (GO2020): Fundamental Research Insights. Graphene and 2D Materials have a huge potential to impact established industrial sectors, building new emerging industries and niche segments and creating economic value. The one-day Graphene and 2DM Online conference (GO2020) will present the most recent advances in fundamental research in electronics, energy storage, biohealth, composites, coatings or sensors. 11 high profile talks from worldwide most influential academia experts in the Graphene and 2DM sector will present speeches in this international event on how advanced materials will change the future of technology and impact positively our daily life. GO2020 will be a one-day online event that means to gather the key players of the Graphene and 2DM Community and related sectors. This event is launched following the success of previous Grapheneconf editions and considering that all major scientific and technological conferences are being cancelled or postponed worldwide until the end of 2020. We are indebted to the following Company for their help and financial support: AMO GmbH (Germany) We also would like to thank all the speakers and participants that join us this year. -
Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor
Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition Seunghyun Lee§, Kyunghoon Lee§, Zhaohui Zhong * Department of Electrical Engineering and Computer Science, University of Michigan Ann Arbor, MI 48109, USA § These authors contributed equally to this work. *Corresponding author. Electronic mail: [email protected] ABSTRACT The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited to µm2 size scale thus far, and synthesis of wafer scale bilayer graphene posts tremendous challenge. Here we report homogeneous bilayer graphene films over at least 2 inch × 2 inch area, synthesized by chemical vapor deposition on copper foil and subsequently transferred to arbitrary substrates. The bilayer nature of graphene film is verified by Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Importantly, spatially resolved Raman spectroscopy confirms a bilayer coverage of over 99%. The homogeneity of the film is further supported by electrical transport measurements on dual-gate bilayer graphene transistors, in which bandgap opening is observed in 98% of the devices. 1 KEYWORDS Graphene, bilayer, chemical vapor deposition, wafer scale, bandgap opening Single and few-layer graphene1-5 are promising materials for post-silicon electronics because of their potential of integrating bottom-up nanomaterial synthesis with top-down lithographic fabrication at wafer scale.4,6 However, single layer graphene is intrinsically semimetal; introducing energy bandgap requires patterning nanometer-width graphene ribbons7-9 or utilizing special substrates.10-12 Bilayer graphene, instead, has an electric field induced bandgap up to 250 meV,13-18 thus eliminating the need for extreme scaling or costly substrates. -
The New Order of Hitler: Virtual History, Fiction and Myth
DEBATER A EUROPA Periódico do CIEDA e do CEIS20 , em parceria com GPE e a RCE. N.13 julho/dezembro 2015 – Semestral ISSN 1647-6336 Disponível em: http://www.europe-direct-aveiro.aeva.eu/debatereuropa/ The New Order of Hitler: Virtual History, Fiction and Myth Sérgio Neto Researcher of CEIS20, University of Coimbra E-mail: [email protected] Abstract At the intersection of counterfactual Historiography and literary fantasy, the triumph of the Axis powers in World War II has been one of the main issues. The resurgence of a hypothetical IV Reich also results extensive. Similarly, cinema has not failed to go over the old question of “if”. This article intent to analyse some virtual literature and historical works of reference about the New European Order in order to discuss possible inspiration that science awoke this genre and concepts revolving around the revisionism and determinism. Keywords: New European Order; Counterfactuals; Dystopia; Historiography; Fantasy When the German army completed the conquest of Poland in September 1939 the New European Order began to take shape. The euphemistic name of that brutal military occupation was in fact more incisive than the name given to the Japanese occupied areas: Greater East Asia Co-Prosperity Sphere 1. But, the main issue was if Hitler’s projects achieved in a few years the degree of dehumanization promised by the propaganda with the so called Reich of a Thousand Years. Based on the assumptions outlined by Mein Kampf , as well as the improvisations made during the course of the war, the dreams and fantasies of world domination were analysed not only by the historiography, but widely widespread by the alternate story genre. -
{PDF EPUB} Batman Turning Points by Greg Rucka Search Abebooks
Read Ebook {PDF EPUB} Batman Turning Points by Greg Rucka Search AbeBooks. We're sorry; the page you requested could not be found. AbeBooks offers millions of new, used, rare and out-of-print books, as well as cheap textbooks from thousands of booksellers around the world. Shopping on AbeBooks is easy, safe and 100% secure - search for your book, purchase a copy via our secure checkout and the bookseller ships it straight to you. Search thousands of booksellers selling millions of new & used books. New & Used Books. New and used copies of new releases, best sellers and award winners. Save money with our huge selection. Rare & Out of Print Books. From scarce first editions to sought-after signatures, find an array of rare, valuable and highly collectible books. Textbooks. Catch a break with big discounts and fantastic deals on new and used textbooks. ISBN 13: 9781401213602. Explores the history of Batman's relationship with Commissioner James Gordon, as they fight crime in the streets of Gotham City. "synopsis" may belong to another edition of this title. Shipping: FREE From United Kingdom to U.S.A. Other Popular Editions of the Same Title. Featured Edition. ISBN 10: 184576563X ISBN 13: 9781845765637 Publisher: Titan Books Ltd, 2007 Softcover. Customers who bought this item also bought. Top Search Results from the AbeBooks Marketplace. 1. Batman Turning Points TP (Paperback) Book Description Paperback. Condition: New. Language: English. Brand new Book. Written by Greg Rucka, Chuck Dixon and Ed Brubaker Art by Steve Lieber, Dick Giordano, Paul Pope and others Cover by Tim Sale Collecting the miniseries BATMAN TURNING POINTS #1-5! This story explores the relationship between Batman and Commisioner Gordon, and how it has developed through the years, from Batman's early days through sidekicks and even a broken back. -
Graphene-Based Spintronic Components
Graphene-Based Spintronic Components Minggang Zeng,†,‡ Lei Shen,∗,† Haibin Su,¶,§ Miao Zhou,† Chun Zhang,†,∥ and Yuanping Feng∗,† Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542, Singapore, NanoCore, 5A Engineering Drive 4, National University of Singapore, Singapore 117576, Singapore, Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore, Institute of High Performance Computing, 1 Fusionopolis Way, Connexis 138632, Singapore, and Department of Chemistry, 3 Science Drive 3, National University of Singapore, Singapore 117543, Singapore E-mail: [email protected] ; [email protected] Abstract A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of graphene nanoribbons, that nearly ±100 % spin-polarized current can be generated in zigzag graphene nanoribbons (ZGNRs) and tuned by a source-drain voltage in the bipolar spin diode, in addition to magnetic configurations of the electrodes. This unusual transport property is attributed to the intrinsic transmission selection rule of the spin subbands near the Fermi level in ZGNRs. The simultaneous control of spin current by the bias voltage and the magnetic configurations of the electrodes provides an opportunity to implement a whole range of spintronics devices. We propose theoretical designs for a complete set of basic spintronic devices, including bipolar spin diode, transistor and logic gates, based on ZGNRs. Graphical TOC Introduction Spintronics, a new type of electronics that seeks to exploit the spin degree of freedom of an electron in addition to its charge, offers one of the most promising solutions for future high operating speed and energy-saving electronic devices.1 The major challenge of spintronics is the difficulty in generating, controlling and detecting spin-polarized current. -
Emerging Spintronics Phenomena and Applications
Emerging spintronics phenomena and applications Rahul Mishra and Hyunsoo Yang * Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore Development of future sensor, memory, and computing nanodevices based on novel physical concepts is one of the significant research endeavors in solid-state research. The field of spintronics is one such promising area of nanoelectronics which utilizes both the charge and spin of an electron for device operations. The advantage offered by spin systems is in their non-volatility and low- power functionality. This paper reviews emerging spintronic phenomena and the research advancements in diverse spin based applications. Spin devices and systems for logic, memories, emerging computing schemes, flexible electronics and terahertz emitters are discussed in this report. *[email protected] 1 I. Introduction Conventional sensor, memory, and computing electronics exploit the charge of an electron for their operations. However, along with charge, an electron is also characterized by its spin angular momentum or spin. It is the spin of an electron that manifests in the form of magnetism that we see in magnetic objects of the macro world. In the information technology age, magnetism has found industry applications in the massive digital data storage. The field of spintronics is centered on electron’s spin in conjunction with its charge. As we near the end of a several decade scaling of CMOS technologies due to fundamental physical limitations, utilizing the degree of spin freedom might be a natural choice for next generation technologies. An external energy source is not required for maintaining a particular spin- or magnetic-state in a spintronic device.