An Overview on the Photocatalytic Activity of Nano-Doped-Tio2 in the Degradation of Organic Pollutants
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Neutron Transmutation Doping of Silicon at Research Reactors
Silicon at Research Silicon Reactors Neutron Transmutation Doping of Doping Neutron Transmutation IAEA-TECDOC-1681 IAEA-TECDOC-1681 n NEUTRON TRANSMUTATION DOPING OF SILICON AT RESEARCH REACTORS 130010–2 VIENNA ISSN 1011–4289 ISBN 978–92–0– INTERNATIONAL ATOMIC AGENCY ENERGY ATOMIC INTERNATIONAL Neutron Transmutation Doping of Silicon at Research Reactors The following States are Members of the International Atomic Energy Agency: AFGHANISTAN GHANA NIGERIA ALBANIA GREECE NORWAY ALGERIA GUATEMALA OMAN ANGOLA HAITI PAKISTAN ARGENTINA HOLY SEE PALAU ARMENIA HONDURAS PANAMA AUSTRALIA HUNGARY PAPUA NEW GUINEA AUSTRIA ICELAND PARAGUAY AZERBAIJAN INDIA PERU BAHRAIN INDONESIA PHILIPPINES BANGLADESH IRAN, ISLAMIC REPUBLIC OF POLAND BELARUS IRAQ PORTUGAL IRELAND BELGIUM QATAR ISRAEL BELIZE REPUBLIC OF MOLDOVA BENIN ITALY ROMANIA BOLIVIA JAMAICA RUSSIAN FEDERATION BOSNIA AND HERZEGOVINA JAPAN SAUDI ARABIA BOTSWANA JORDAN SENEGAL BRAZIL KAZAKHSTAN SERBIA BULGARIA KENYA SEYCHELLES BURKINA FASO KOREA, REPUBLIC OF SIERRA LEONE BURUNDI KUWAIT SINGAPORE CAMBODIA KYRGYZSTAN CAMEROON LAO PEOPLES DEMOCRATIC SLOVAKIA CANADA REPUBLIC SLOVENIA CENTRAL AFRICAN LATVIA SOUTH AFRICA REPUBLIC LEBANON SPAIN CHAD LESOTHO SRI LANKA CHILE LIBERIA SUDAN CHINA LIBYA SWEDEN COLOMBIA LIECHTENSTEIN SWITZERLAND CONGO LITHUANIA SYRIAN ARAB REPUBLIC COSTA RICA LUXEMBOURG TAJIKISTAN CÔTE DIVOIRE MADAGASCAR THAILAND CROATIA MALAWI THE FORMER YUGOSLAV CUBA MALAYSIA REPUBLIC OF MACEDONIA CYPRUS MALI TUNISIA CZECH REPUBLIC MALTA TURKEY DEMOCRATIC REPUBLIC MARSHALL ISLANDS UGANDA -
Modeling Techniques for Multijunction Solar Cells Meghan N
NUSOD 2018 Modeling Techniques for Multijunction Solar Cells Meghan N. Beattie Karin Hinzer Matthew M. Wilkins SUNLAB, Centre for Research in SUNLAB, Centre for Research in SUNLAB, Centre for Research in Photonics Photonics Photonics University of Ottawa University of Ottawa University of Ottawa Ottawa, Canada Ottawa, Canada Ottawa, Canada [email protected] Christopher E. Valdivia SUNLAB, Centre for Research in Photonics University of Ottawa Ottawa, Canada Abstract—Multi-junction solar cell efficiencies far exceed density of defects at the interface [4]. Many of these defects those attainable with silicon photovoltaics. Recently, this propagate towards the surface, resulting in threading technology has been applied to photonic power converters with dislocations that inhibit minority carrier collection [3] In this conversion efficiencies higher than 65%. These devices operate research, we are investigating the use of a voided germanium well in part because of luminescent coupling that occurs in the interface layer to intercept dislocations before they reach the multijunction device. We present modeling results to explain surface, enabling epitaxial growth of high quality Ge, IV how this boosts device efficiencies by approximately 70 mV per (e.g. SiGeSn), and III-V (e.g. InGaAs, InGaP) junction in GaAs devices. Luminescent coupling also increases semiconductors on Si substrates. efficiency in devices with four more junctions, however, the high cost of materials remains a barrier to their widespread By modelling multijunction solar cell designs on Si use. Substantial cost reduction could be achieved by replacing substrates, we investigate the impact of threading the germanium substrate with a less expensive alternative: dislocations on device performance. With highly doped Si, silicon. -
CHAPTER 8: Diffusion
1 Chapter 8 CHAPTER 8: Diffusion Diffusion and ion implantation are the two key processes to introduce a controlled amount of dopants into semiconductors and to alter the conductivity type. Figure 8.1 compares these two techniques and the resulting dopant profiles. In the diffusion process, the dopant atoms are introduced from the gas phase of by using doped-oxide sources. The doping concentration decreases monotonically from the surface, and the in-depth distribution of the dopant is determined mainly by the temperature and diffusion time. Figure 8.1b reveals the ion implantation process, which will be discussed in Chapter 9. Generally speaking, diffusion and ion implantation complement each other. For instance, diffusion is used to form a deep junction, such as an n-tub in a CMOS device, while ion implantation is utilized to form a shallow junction, like a source / drain junction of a MOSFET. Boron is the most common p-type impurity in silicon, whereas arsenic and phosphorus are used extensively as n-type dopants. These three elements are highly soluble in silicon with solubilities exceeding 5 x 1020 atoms / cm3 in the diffusion temperature range (between 800oC and 1200oC). These dopants can be introduced via several means, including solid sources (BN for B, As2O3 for As, and P2O5 for P), liquid sources (BBr3, AsCl3, and POCl3), and gaseous sources (B2H6, AsH3, and PH3). Usually, the gaseous source is transported to the semiconductor surface by an inert gas (e.g. N2) and is then reduced at the surface. 2 Chapter 8 Figure 8.1: Comparison of (a) diffusion and (b) ion implantation for the selective introduction of dopants into a semiconductor substrate. -
Contactless, Nondestructive Determination of Dopant Profiles Of
www.nature.com/scientificreports OPEN Contactless, nondestructive determination of dopant profles of localized boron-difused regions in Received: 11 November 2018 Accepted: 9 July 2019 silicon wafers at room temperature Published: xx xx xxxx Hieu T. Nguyen , Zhuofeng Li, Young-Joon Han , Rabin Basnet, Mike Tebyetekerwa , Thien N. Truong , Huiting Wu, Di Yan & Daniel Macdonald We develop a photoluminescence-based technique to determine dopant profles of localized boron- difused regions in silicon wafers and solar cell precursors employing two excitation wavelengths. The technique utilizes a strong dependence of room-temperature photoluminescence spectra on dopant profles of difused layers, courtesy of bandgap narrowing efects in heavily-doped silicon, and diferent penetration depths of the two excitation wavelengths in silicon. It is fast, contactless, and nondestructive. The measurements are performed at room temperature with micron-scale spatial resolution. We apply the technique to reconstruct dopant profles of a large-area (1 cm × 1 cm) boron-difused sample and heavily-doped regions (30 μm in diameter) of passivated-emitter rear localized-difused solar cell precursors. The reconstructed profles are confrmed with the well- established electrochemical capacitance voltage technique. The developed technique could be useful for determining boron dopant profles in small doped features employed in both photovoltaic and microelectronic applications. An attractive approach for improving light-to-electricity power conversion efciencies of crystalline silicon (c-Si) solar cells is to minimize surface areas of heavily-doped layers. Tis is due to the high recombination-active nature of the heavily-doped layers, causing a signifcant loss of photo-induced electrons and holes. Several solar cell designs employing this concept have been proved to achieve efciencies over 24% such as interdigitated back-contact (IBC)1–3 and passivated-emitter rear localized-difused (PERL)4–6 cell structures. -
Efficient Er/O Doped Silicon Light-Emitting Diodes at Communication Wavelength by Deep Cooling
Efficient Er/O Doped Silicon Light-Emitting Diodes at Communication Wavelength by Deep Cooling Huimin Wen1,#, Jiajing He1,#, Jin Hong2,#, Fangyu Yue2* & Yaping Dan1* 1University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, 200240, China. 2Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China. #These authors contributed equally * To whom correspondence should be addressed: [email protected], [email protected] Abstract A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the aggregation of erbium ions that are efficient non-radiative centers, formed during the standard rapid thermal treatment. Here, we apply a deep cooling process following the high- temperature annealing to suppress the aggregation of erbium ions by flushing with Helium gas cooled in liquid nitrogen. The resultant light emitting efficiency is increased to a record 14% at room temperature, two orders of magnitude higher than the sample treated by the standard rapid thermal annealing. The deep-cooling-processed Si samples were further made into light-emitting diodes. Bright electroluminescence with a spectral peak at 1.54 µm from the silicon-based diodes was also observed at room temperature. With these results, it is promising to develop efficient silicon lasers at communication wavelength for the monolithically integrated silicon photonics. The monolithic integration of fiber optics with complementary metal-oxide- semiconductor (CMOS) integrated circuits will significantly speed up the computing and data transmission of current communication networks.1-3 This technology requires efficient silicon-based lasers at communication wavelengths.4, 5 Unfortunately, silicon is an indirect bandgap semiconductor and cannot emit light at communication wavelengths. -
A New Strategy of Bi-Alkali Metal Doping to Design Boron Phosphide Nanocages of High Nonlinear Optical Response with Better Thermodynamic Stability
A New Strategy of bi-Alkali Metal Doping to Design Boron Phosphide Nanocages of High Nonlinear Optical Response with Better Thermodynamic Stability Rimsha Baloach University of Education Khurshid Ayub University of Education Tariq Mahmood University of Education Anila Asif University of Education Sobia Tabassum University of Education Mazhar Amjad Gilani ( [email protected] ) University of Education Original Research Full Papers Keywords: Boron phosphide (B12P12), Bi-alkali metal doping, Nonlinear optical response (NLO), Density functional theory Posted Date: February 11th, 2021 DOI: https://doi.org/10.21203/rs.3.rs-207373/v1 License: This work is licensed under a Creative Commons Attribution 4.0 International License. Read Full License Version of Record: A version of this preprint was published at Journal of Inorganic and Organometallic Polymers and Materials on April 16th, 2021. See the published version at https://doi.org/10.1007/s10904-021-02000-6. A New Strategy of bi-Alkali Metal Doping to Design Boron Phosphide Nanocages of High Nonlinear Optical Response with Better Thermodynamic Stability ABSTRACT: Nonlinear optical materials possess high rank in fields of optics owing to their impacts, utilization and extended applications in industrial sector. Therefore, design of molecular systems with high nonlinear optical response along with high thermodynamic stability is a dire need of this era. Hence, the present study involves investigation of bi-alkali metal doped boron phosphide nanocages M2@B12P12 (M=Li, Na, K) in search of stable nonlinear optical materials. The investigation includes execution of geometrical and opto-electronic properties of complexes by means of density functional theory (DFT) computations. Bi-doped alkali metal atoms introduce excess of electrons in the host B12P12 nanocage. -
Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications
nanomaterials Review Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications Hocheon Yoo 1,2,† , Keun Heo 3,† , Md. Hasan Raza Ansari 1,2 and Seongjae Cho 1,2,* 1 Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; [email protected] (H.Y.); [email protected] (M.H.R.A.) 2 Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea 3 Department of Semiconductor Science & Technology, Jeonbuk National University, Jeonju-si, Jeollabuk-do 54896, Korea; [email protected] * Correspondence: [email protected] † These authors contributed equally to this work. Abstract: Two-dimensional materials have garnered interest from the perspectives of physics, materi- als, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are Citation: Yoo, H.; Heo, K.; added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used Ansari, M..H.R.; Cho, S. -
Designing Band Gap of Graphene by B and N Dopant Atoms
Designing band gap of graphene by B and N dopant atoms Pooja Rani and V.K. Jindal1 Department of Physics, Panjab University, Chandigarh-160014, India Ab-initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 2 % (one atom of the dopant in 50 host atoms) to 12 % (six dopant atoms in 50 atoms host atoms) and also by considering different doping sites for the same concentration of substitutional doping. All the calculations have been performed by using VASP (Vienna Ab-initio Simulation Package) based on density functional theory. By B and N doping p-type and n-type doping is induced respectively in the graphene sheet. While the planar structure of the graphene sheet remains unaffected on doping, the electronic properties change from semimetal to semiconductor with increasing number of dopants. It has been observed that isomers formed differ significantly in the stability, bond length and band gap introduced. The band gap is maximum when dopants are placed at same sublattice points of graphene due to combined effect of symmetry breaking of sub lattices and the band gap is closed when dopants are placed at adjacent positions (alternate sublattice positions). These interesting results provide the possibility of tuning the band gap of graphene as required and its application in electronic devices such as replacements to Pt based catalysts in Polymer Electrolytic Fuel Cell (PEFC). INTRODUCTION Graphene is the name given to a single layer of graphite, made up of sp2 hybridized carbon atoms arranged in a honeycomb lattice, consisting of two interpenetrating triangular sub-lattices A and B (Fig. -
Gain in Polycrystalline Nd-Doped Alumina: Leveraging Length Scales to Create a New Class of High-Energy, Short Pulse, Tunable Laser Materials Elias H
Penilla et al. Light: Science & Applications (2018) 7:33 Official journal of the CIOMP 2047-7538 DOI 10.1038/s41377-018-0023-z www.nature.com/lsa ARTICLE Open Access Gain in polycrystalline Nd-doped alumina: leveraging length scales to create a new class of high-energy, short pulse, tunable laser materials Elias H. Penilla1,2,LuisF.Devia-Cruz1, Matthew A. Duarte1,2,CoreyL.Hardin1,YasuhiroKodera1,2 and Javier E. Garay1,2 Abstract Traditionally accepted design paradigms dictate that only optically isotropic (cubic) crystal structures with high equilibrium solubilities of optically active ions are suitable for polycrystalline laser gain media. The restriction of symmetry is due to light scattering caused by randomly oriented anisotropic crystals, whereas the solubility problem arises from the need for sufficient active dopants in the media. These criteria limit material choices and exclude materials that have superior thermo-mechanical properties than state-of-the-art laser materials. Alumina (Al2O3)isan ideal example; it has a higher fracture strength and thermal conductivity than today’s gain materials, which could lead to revolutionary laser performance. However, alumina has uniaxial optical proprieties, and the solubility of rare earths (REs) is two-to-three orders of magnitude lower than the dopant concentrations in typical RE-based gain media. We present new strategies to overcome these obstacles and demonstrate gain in a RE-doped alumina (Nd:Al2O3) for the first time. The key insight relies on tailoring the crystallite size to other important length scales—the wavelength of 1234567890():,; 1234567890():,; 1234567890():,; 1234567890():,; light and interatomic dopant distances, which minimize optical losses and allow successful Nd doping. -
Effects of Dopant Additions on the High Temperature Oxidation Behavior of Nickel-Based Alumina- Forming Alloys
Effects of Dopant Additions on the High Temperature Oxidation Behavior of Nickel-based Alumina- forming Alloys by Talia L. Barth A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Materials Science and Engineering) in the University of Michigan 2020 Doctoral Committee: Professor Emmanuelle Marquis, Chair Assistant Professor John Heron Professor Krishna Garikipati Professor Alan Taub Talia L. Barth [email protected] ORCID iD: 0000-0001-8266-7447 © Talia L. Barth 2020 ACKNOWLEDGEMENTS I would like to first offer my heartfelt thanks to my advisor, Professor Emmanuelle Marquis, without whom this work would not have been possible. Her exceptional mentorship has had an immense impact on my development as a researcher and a person, and her support and guidance along my journey have been invaluable. I would also like to express my appreciation for the rest of my committee, Professor Alan Taub, Assistant Professor John Heron, and Professor Krishna Garikipati for providing valuable advice and support for the completion of this work. I am grateful to the staff at the Michigan Center for Materials Characterization (MC)2, especially to Allen Hunter, Bobby Kerns, Haiping Sun, and Nancy Muyanja whose training enabled me to work confidently on the characterization instruments essential to this dissertation, and were always eager to lend their expertise with data collection and analysis. My colleagues in the Marquis group over the years were also important to this work and to my professional and personal development. I would like to thank Kevin Fisher, Ellen Solomon, Elaina Reese, and Peng-Wei Chu for getting me up to speed in the lab and for being there as mentors and friends in my first years as a grad student. -
Doping of Semiconductors N Doping This Involves Substituting Si by Neighboring Elements That Contribute Excess Electrons
Materials 100A, Class 12, Electrical Properties etc Ram Seshadri MRL 2031, x6129 [email protected]; http://www.mrl.ucsb.edu/∼seshadri/teach.html Doping of semiconductors n doping This involves substituting Si by neighboring elements that contribute excess electrons. For example, small amounts of P or As can substitute Si. Since P/As have 5 valence electrons, they behave like Si plus an extra electron. This extra electron contributes to electrical conductivity, and with a sufficiently large number of such dopant atoms, the material can displays metallic conductivity. With smaller amounts, one has extrinsic n-type semiconduction. Rather than n and p being equal, the n electrons from the donor usually totally outweigh the intrinsic n and p type carriers so that: σ ∼ n|e|µe The donor levels created by substituting Si by P or As lie just below the bottom of the conduction band. Thermal energy is usually sufficient to promote the donor electrons into the conduction band. electron from P Energy CB electron pair Donor levels VB p doping This involves substituting Si by neighboring atom that has one less electron than Si, for example, by B or Al. The substituent atom then creates a “hole” around it, that can hop from one site to another. The hopping of a hole in one direction corresponds to the hopping of an electron in the opposite direction. Once again, the dominant conduction process is because of the dopant. σ ∼ p|e|µh hole from Al Energy CB electron pair Acceptor levels VB T dependence of the carrier concentration The expression: 1 Materials 100A, Class 12, Electrical Properties etc Eg ρ = ρ0 exp( ) 2kBT can inverted and written in terms of the conductivity −Eg σ = σ0 exp( ) 2kBT Now σ = n|e|µe or σ = p|e|µh. -
Ultrahigh Doping of Graphene Using Flame-Deposited Moo 3
1592 IEEE ELECTRON DEVICE LETTERS, VOL. 41, NO. 10, OCTOBER 2020 Ultrahigh Doping of Graphene Using Flame-Deposited MoO3 Sam Vaziri , Member, IEEE, Victoria Chen, Lili Cai, Yue Jiang , Michelle E. Chen, Ryan W. Grady, Xiaolin Zheng, and Eric Pop , Senior Member, IEEE Abstract— The expected high performance of graphene- result, applying conventional semiconductor doping methods based electronics is often hindered by lack of adequate (e.g. substituting C atoms with dopants) is very challenging doping, which causes low carrier density and large sheet for graphene and other 2D materials. resistance. Many reported graphene doping schemes also suffer from instability or incompatibility with existing semi- A more promising route to control the doping of graphene conductor processing. Here we report ultrahigh and stable and other 2D materials is to introduce charge carriers from p-type doping up to ∼7 × 1013 cm−2 (∼2 × 1021 cm−3) of the outside, either with a field-effect (electrostatically or with monolayer graphene grown by chemical vapor deposition. external charge dipoles) or by external dopants (similar to This is achieved by direct polycrystalline MoO3 growth on modulation doping in conventional semiconductors) [10]–[13]. graphene using a rapid flame synthesis technique. With this approach, the metal-graphene contact resistance for For example, charge transfer from external metal-oxide layers holes is reduced to ∼200 · μm. We also demonstrate is one of the most promising mechanisms, being compati- that flame-deposited MoO3 provides over 5× higher doping ble with semiconductor device processing while minimally of graphene, as well as superior thermal and long-term degrading the electronic properties of graphene [14], [15].