2012 NAND Flash Market Annual Report LATEST MARKET INFORMATION Comprehensive and Accurate NAND Flash
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NATIONAL IC DESIGN SHENZHEN INDUSTRIAL CENTER CHINAFLASHMARKET.COM PROVIDES THE 2012 NAND Flash market annual report LATEST MARKET INFORMATION Comprehensive and accurate NAND Flash market data report Industry analysis report Deeply analyze and demonstrate NAND January 13, 2013 Flash market situation Smartphone embedded storage solution steering to eMCP/eMMC Provide latest market trend, display newproducts The eMMC standard was designed mainly to solve the quality issue and reliability issue caused by the Fully provide professional market consulting upgrade of Flash nanometer process technology, and to fulfill the customer’s needs on high services performance and high reliability storage. It mainly applied on the hand-held terminal products which require large capacity data storage. With the continuously improvements on product feature and speed, eMMC have been widely applied on Smartphone, medium & high-end Tablet PC, Ultrabook … Windows 8 opens the new opportunity for SSD popularity Under Windows 8 system, it upgraded the original defragmentation tool, made optimization special for SSD and also disk judgment on mechanical hard drive or SSD drive. And automatically make corresponding strategy (e.g. Mechanical hard disk to handle defragment, plan trim process on SSD.), thus, operates on the entire volume when the SSD is idle rather than NTFS send Trim command to controller. As a result, systems start from Windows 8 or later version will be able to adopt … Market trend of NAND Flash market situation in 2012 1800 1700 1600 1500 price 1400 index 1300 Contact : www.ChinaFlashMarket.com 1200 Tel:+86 0755-86133027 1100 Fax:+86 0755-86185012 1000 Email:[email protected] 900 Add:Room 6/F,Building No4.,Software park keji Middle 1月1日 2月1日 3月1日 4月1日 5月1日 6月1日 7月1日 8月1日 9月1日 10月1日 11月1日 12月1日 Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2 Road,Hi-tech Industrial park,NanShan Distrist.ShenZhen,P.R.C Source:www.chinaflashmarket.com NAND Flash consumption by Emerging-markets Copyright 2012 Shenzhen Flashmarket Information Co., Ltd . All rights reserved. This report or any portion Apart from the big NAND Flash consumption by Smart phone and Tablet PC, the growth of some hereof may not be reprinted, sold or redistributed Emerging-markets such as Smart TV and Multi-screen interactive also boosts the NAND Flash without the written consent of Shenzhen Flashmarket demands. Information Co., Ltd. Table of contents Market trend of NAND Flash market situation in 2012……………………………………………………………………. 3 NAND Flash manufactory technique process and market structure …………………..…………………….…….. 3 1.NAND Flash nanometer process technology access to 2xnm era …………………………………………………….……..……… 3 2.NAND Flash interface transferring rate up to 400MB/s…………………………………………………………………….…......…… 4 3.NAND Flash from production expansion to production reduction………………………………………………………..…………… 4 4.NAND Flash supply excess becomes scarce…………………………………………………………..………………………………. 5 NAND Flash related product application market…………………….……………………………………………...….…... 6 1.eMMC / eMCP will dominate the mobile device embedded storage…………………………………………………..…………. 6 Development of eMMC Specification promotes continuous application expansion Smartphone embedded storage solution steering to eMCP/eMMC Latest eMMC products from main eMMC suppliers 2.SSD replacing traditional hard disk is an irresistible trend…………………………..………………………………………….. 9 SSD NAND Flash structure is developed from SLC towards TLC Windows 8 opens the new opportunity for SSD popularity Samsung, Intel, Micron, SanDisk and other manufactures treat SSD as the prioritized product and market SSD interface Changing from SATA II to SATA III Expanding SSD Market Applications 3. USB3.0 interface become mature, market demands warming up …………………………………………………..………… 14 Intel processor, Windows 8 system provides growth platform for USB3.0 USB3.0 controller technology promotes the growth of USB3.0 peripheral products USB3.0 Current problems and outlook of the coming year 4. Flash Memory Card mainstream application demands began to recession……………………...…………………….…… 15 The Development of SD Specification Flash memory card application market changes 5. Terminal application demands appeared one raise and another fail in 2012…………………………………….……..…… 17 NAND Flash market outlook in 2013………………………………………………………………….………………...…….... 18 2 Shenzhen Flashmarket Information Co., Ltd . Exhibit 1 Market trend of NAND Flash market situation in 2012 NAND Flash price index trend in 2012 Market demand for NAND Flash downturn in the first half of 2012 with 1800 excess supply, consumer flash products: such as USB drives, SSD, memory price index 1700 cards and NAND flash decline heavily, affecting the overall price index from 1600 January to May, the trend continued down to decrease 42% in the first half 1500 year, while in 2011 the overall price index fell to 48%. The price decline of 1400 NAND Flash in the half year of 2012 has been doubled up of the decline in 1300 the whole year of 2011. The price of NAND flash products fall in a dilemma in 1200 the first half year in 2012. 1100 1000 Rebound effect in the overall price index in June, many manufacturers 900 1月1日 2月1日 3月1日 4月1日 5月1日 6月1日 7月1日 8月1日 9月1日 10月1日 11月1日 12月1日 strictly controlled the supply of NAND Flash, Toshiba takes the lead in Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec reducing the outputs. NAND flash, memory cards, USB drive price increases Source: www.chinaflashmarket.com to boost the overall price index continued to two monthly increases, but the stockings, memory cards, USB drive prices again continued to rise, eMMC, market demand is still limited, eMMC, SSD product prices continued to SSD price kept in an average price, the overall price index upward trend decline from the high prices. In August ,there are signs of a slight decline continued into early October. November in the impact of weaker demand, the under the pressure from trading at high prices and limited demand influence, price is a down trend, although in December there are the small peak season but the market is affected significantly in September by introducing of new to help out, but there is no significant signs in price increasing. NAND Flash manufactory technique process and market structure 1. NAND Flash nanometer process technology access to Exhibit 2:Main NAND Flash manufactory nanometer 2xnm era processing technology roadmap In 2012, major NAND Flash manufactory nanometer processing technology Technology 2008 2009 2010 2011 2012 2013 access into 2xnm era, Samsung the amount of production is based on 21nm Manufactory technology, Toshiba/ SanDisk continue to enhance producing the 19nm Samsung 42nm 35nm 32nm 27nm 21nm 16nm technology production proportion, Micron, SK-Hynix starts the transformation Toshiba/SanDisk 43nm 43nm 32nm 24nm 19nm 1xnm from 20nm technology mass production to 1xnm technology, at the same Micron 34nm 34nm 25nm 25nm 20nm 18nm time began to increase the production of nanometer process technology SK- Hynix 46nm 46nm 35nm 26nm 20nm 15nm NAND Flash manufactory which is started by MLC NAND Flash structure Source:www.chinaflashmarket.com framework to TLC NAND Flash, this will improve capacity significantly meanwhile costs are reduced as well. 3 Shenzhen Flashmarket Information Co., Ltd . 2. NAND Flash interface transferring rate up to 400MB/s Exhibit 3:NAND Flash interface standards development of NAND Flash is using the two high speed interfaces standard: ONFI and different manufactories Toggle DDR standard, they are the quickest access to the standard interface Transfer Toggle ONFI between the controller and Flash. The ONFI V1.0 specification from Intel, speed DDR Toggle DDR V2.0 ONFIV3.0 Micron, Phison, SK-Hynix, Seagate equal to 2006 published version, is committed to simplify NAND Flash applications in consumer electronics 400MB/s products, as the introduced with the new specification, ONFI V3.0 400MB / s transferring speed up from the ONFI V1.0 of 50MB / s, and also adds new ONFI V2.12.2 ONFI V2.3 features, such as supporting for interleaved operation, extended ECC 200MB/s Information, EZ -NAND ECC offload, differential signal technology etc. ONFI V2.0 Toggle DDR V1.0 Samsung, Toshiba and SanDisk adopted another interface standard, from 133MB/s 2010 Samsung produced the Toggle DDR V1.0 interface standard NAND ONFI V1.0 SDR Flash, Toggle DDR NAND using two-way DQS signal control read and write 50MB/s operations, while increased the transmission speed up to 133MB/s, but also 2006 2007 2008 2009 2010 2011 lowered the power consumption compared to the previous SDR interface. : Toggle DDR V2.0 interface standard was released in 2010, the brand new Exhibit 4 2012 NAND Flash manufactory output situation Capacity Toggle DDR2 interface increased the NAND Flash data transfer rate up to Vendor Manufactory Technology Remark unit:per month 400MB/s, 3 times faster than Toggle DDR1 interface which speed reaches Fab 12 27nm 100K piece 133MB/s, compared to SDR NAND Flash data transfer speed of 40MB/s 10 Fab 14 27/21nm 150K piece times faster. Samsung Austin 27/21nm Transfer to logic chips Fab 16 21/1xnm 300K piece 3. NAND Flash from production expansion to production China 1xnm 100K piece Output in 2014 reduction Fab 4 24nm 200K piece Toshiba NAND flash plant continue to enhance the proportion of 2xnm production in Fab 5 19nm 300K piece 2012, and TLC NAND Flash structure continues to mature, to procure NAND Micron IM Flash 25nm/20nm 150K piece SK- Hynix 26/20nm 150K piece Flash costs falling and doubled output, Samsung Fab 16,Toshiba Fab 5, Source:www.chinaflashmarket.com Micron IM Flash factory capacity constantly output the driven NAND Flash market volume of output of the production capacity in 2012 of approximately and NAND Flash partial remission of DRAM output pressure. In the second nine million 12-inch Wafer equivalents. half of the year, the original conversion of part of the NAND Flash and DRAM There’s only little difference between NAND Flash and DRAM production to mobile DRAM, NAND Flash price stability have made great contributions, equipment, and fluctuations in the market price of NAND Flash and DRAM which also led to the PC DRAM prices.