Bio-data

NAME: DIPAK KUMAR GOSWAMI, Professor Department of Physics, IIT Kharagpur, Kharagpur – 721302, WB.

Date of birth: December 28, 1974 Email: [email protected].ernet.in [email protected]

ACADEMIC POSITIONS:

[7] 16 Mar 2018 – Present: Professor Indian Institute of Technology Kharagpur, Department of Physics, Kharagpur, India [6] 13 Dec 2013 – 16 Mar 2018: Associate Professor Indian Institute of Technology Kharagpur, Department of Physics, Kharagpur, India [5] 28 July 2012- 12 Dec 2013: Associate Professor Indian Institute of Technology Guwahati (IITG), Department of Physics, Guwahati, India [4] July 2007 – July 2012: Assistant Professor Indian Institute of Technology Guwahati (IITG), Department of Physics, Guwahati, India [3] June 2006 – May 2007: Post Doctoral Research Fellow (with Prof. Helmut Dosch). Max Planck Institute for Metals Research, Stuttgart, Germany. [2] May 2004 – March 2006: Post Doctoral Research Fellow (with Prof. Michael. Bedzyk). Northwestern University, Materials Science and Engineering Department, USA. [1] 10 April – 10 June, 2003: Visiting Scientist (with Prof. Jorg Zegenhagen). European Synchrotron Radiation Facility (ESRF) at beamline ID32 and surface characterization laboratory, Grenoble, France.

Ph.D: Growth of self-assembled nanostructures by molecular beam epitaxy system and their characterization. Supervisor: Prof. Bhupendra Nath Dev Institute: Institute of Physics, Bhubaneswar

RESEARCH GUIDANCE: Degree Guidance Number Completed Number in Progress Doctoral Single 02 03 Doctoral Joint 01 07 M.Sc / M.Tech Single 16 03 B.Tech (Eng. Physics) Single 04 0

Details of doctoral students:

Ph.D. Supervision [ Total : 13 ] Sl. No. Name of the Thesis Title / Area Period Joint/Single Student Supervisor From To

Ph.D degree awarded

1. Dr. Arindam Pal Growth of self-assembled July, 2008 Feb, 2013 Single structures of perelyne and naphthalene derivatives by thermal evaporation and their characterizations

2. Dr. Gedda Murali Fabrication of CoPc and PTCDI- July, 2010 Dec, 2014 Single Ph based low-operating voltage organic field-effect transistors 3 Dr. N. V. V. Subbarao Fabrication and July, 2010 July, 2015 Joint Characterization of Highly Environmental Sustainable

Page: 1/8 Organic Field-Effect Transistors with Tri-layer Gate Dielectrics Ph.D Work Continuing (10)

4 Suman Mandal Flexible electronic devices for Jun 2014 till date Single health care application

5 Satyajit Roy Organic inorganic photo Jul 2014 till date Single detectors

6 Ajay Mandal Organic field-effect transistors July 2015 till date Single based biosensors

7 Sourabh Pal ZnO hybrid nanostructures Jul 2016 till date Joint / ATDC

8 Suvani Subhadarshini Polymer nanocomposites for Jul 2016 till date Joint / SNST flexible electronics

9 Sudarshan Singh SiGe nanostructures for Jun 2016 till date Joint / Physics photovoltaic devices

10 Priyanka Rani 2D Materials for solar energy Jan 2017 till date Joint / SNST harvesting and storage

11 Monojit Mondal Nano scale devices for energy July 2017 till date Joint / E&ECE storage and harvesting

12 Santanab Majumder Nano scale sensors July 2017 till date Joint / E&ECE

13 Samik Mallik Flexible sensors for Jan 2018 till date Joint / SNST environmental monitoring

LIST OF PUBLICATIONS:

A. Articles in International Journals (published):

SL Authors Title Journal/Patent # No Citation 37 Suman Mandal, Dipak K. Ultra-precision, flexible Patent (2018) – Goswami temperature sensors with low operating voltage organic field- Application No: effect transistors for measuring 201831004408 temperature of living beings over a wide range. 36 Nimmakayala V.V. Subbarao, Effect of temperature on Sensor and – Suman Mandal, Murali Gedda, hysteresis of dipolar dielectric Actuators A: Parameswar Krishnan Iyer, layer based organic field-effect Physical, Dipak K. Goswami transistors: A temperature 269, 491–499 sensing mechanism (2018) 35 Suresh Vasimalla, Effects of Dielectric Material, ACS Omega, – Nimmakayala V. V. Subbarao, HMDS Layer, and Channel 2, 2552−2560 Murali Gedda, Dipak K. Length on the Performance of (2017) Goswami, the Perylenediimide-Based and Parameswar Krishnan Organic Field-Effect Transistors Iyer 34 Nimmakayala V.V. Subbarao, Organic field-effect transistors Organic 06 Murali Gedda, Parameswar as high performance humidity Electronics, 32, Krishnan Iyer, Dipak K. sensors with rapid response, 169–178 (2016) Goswami recovery time and remarkable ambient stability 33 Nimmakayala V V Subbarao , Enhanced environmental ACS Appl. Mater. 15 Murali Gedda , Parameswar stability induced by effective Interfaces, Krishnan Iyer and Dipak K. polarization of a polar dielectric 7, 1915−1924 Goswami layer in tri-layer dielectric (2015) system of organic field-effect

Page: 2/8 transistors: a quantitative study. 31 Dipak K. Goswami Organic Semiconductor Invertis Journal of – Materials for Future Electronics Renewable Energy 5 (1), 41-46 (2015) 30 Nimmakayala V. V. Subbarao, Growth and Characterization of AIP Conf. Proc. – Murali Gedda, V. Suresh, D. N, N’-Dioctadecyl -1, 7- 1576, 42–45 (2014) Anamika, Parameswar K. Iyer, Dibromo-3, 4, 9, 10- and Dipak K. Goswami, Perylenetetracarboxylic-Diimide Micron/Nano Wires for Organic Field Effect Transistors. 29 Murali Gedda, Nimmakayala Growth Mechanism of Cobalt(II) AIP Conf. Proc. 01 V. V. Subbarao and Dipak K. Phthalocyanine (CoPc) Thin 1576, 152–154 Goswami, Films on SiO2 and Muscovite (2014) Substrates 28 Murali Gedda, Nimmakayala V Local Diffusion Induced Langmuir, 03 V Subbarao, and Dipak K. Roughening in Cobalt 30, 8735-8740 Goswami Phthalocyanine Thin Film (2014) Growth 27 Nimmakayala V. V. Subbarao, Effect of thickness of bilayer Phys. Status Solidi 05 Murali Gedda, Suresh dielectric on 1,7-dibromo-N,N 0 A, 211, 2403–2411 Vasimalla, Parameswar K. -dioctadecyl -3,4,9,10- (2014) Iyer and Dipak K. Goswami perylenetetracarboxylic diimide based organic field-effect transistors 26 Pal, A., Mahato, J. C., Dev, B. Roughening in Electronic ACS Appl. Mater. 01 N., Goswami, D. K. Growth of Ag on Si(111)-(7×7) and Interfaces, Surfaces 5, 9517−9521 (2013) 25 Gedda, M., Subbarao, N. V. V, High carrier mobility of CoPc AIP Advances, 06 Obaidulla, Sk. Md., and wires based field-effect 3, 112123 (2013) Goswami, D. K. transistors using bilayer gate dielectric 24 Goswami, D. K. and Pal, Growth of percolated Ag Int. J. Nanoscience 01 Arindam nanostructures on Si(111)- 10, (2011) 123-127 (7×7) Surfaces 23 Goswami, D. K. Effect of interface structures on Asian. J. Physics – the growth of Ag on Si(111) 19, (2010) 215- 220 surfaces 22 Zhang, X., Barrena, E., Evidence for layer-dependent Phys. Rev. Lett. 40 Goswami, D. K., Oteyza, D. Ehrlich-Schwöbel barrier in 103, (2009) G. de , Weis, C. and Dosch, H. organic thin film growth 136101-4 21 Giri, P. K., Kumari, S., Low energy oxygen Appl. Surf. Sci. 03 Goswami, D. K. implantation induced improved 256 (2009) 384–388 crystallinity and optical properties of surface modified ZnO single crystals. 20. Weitz, R. T., Amsharov, K., Film morphology, performance J. Am. Chem. Soc. 216 Zschieschang, U., Barrena, E. and stability of n-channel 130 (2008) 4637- V., Goswami, D. K., organic transistors based on 4645. Burghard, M., Dosch, H., novel perylene carboxylic Jansen, M. and Klauk, H. diimide derivatives. 19. M. Sofos, D. Stone, D. K. Nanoscale Structure of Self- J. Phys. Chem. C 19 Goswami, J. Okasanski, J. Assembling Hybrid Materials of 112 (2008) 2881- Hua, M. J. Bedzyk, and S. Inorganic and Electronically 2887. Stupp Active Organic Phases 18. Goswami, D. K., Coexistent compressive and Appl. Surf. Sci. 253 07 Bhattacharjee, K., Satpati, B., tensile strain in Ag islands on Si (2007) 9142-9147 Kuri, G., Satyam, P. V., Dev, (111) – (7x7) surfaces. B. N. 17. Goswami, D. K., Preferential heights on growth Surf. Sci. 601 37 Bhattacharjee, K., Satpati, B., of Ag island on Si(111)-(7x7) (2007) 603-608. Roy, S., Satyam, P. V. and surfaces. Dev, B. N.

Page: 3/8 16. Kim, C.-Y., Elam, J. W., Pellin, Imaging of atomic layer J. Phys. Chem. B 28 M.J., Goswami, D. K., deposition (ALD) tungsten 110 (2006) 12616- Cristensen, S. T., Hersam, M. monolayer on a-TiO2(110) by 12620. C., Stair, P. C. and Bedzyk, M. X-ray standing wave Fourier inversion. 15. Dev, B.N., Bera, S., Satpati, Nonmagnetic to magnetic Microelectronic 12 B., Goswami, D. K., nanostructures via ion Engineering, 83, Bhattacharjee, K., Satyam, irradiation. (2006) 1721-1725. P.V., Yamashita, K., Liedke, O. M., Potzger, K., Fassbender, J., Eichhorn, F., Groetzschel, R. 14. Bera, S., Satpati, B., Ion-beam induced J. Appl. Phys. 99, 15 Goswami, D. K., transformations in nanoscale (2006) 074301-5 Bhattacharjee, K., Satyam, P. multilayers: Evolution of V. and Dev, B. N.: clusters with preferred length scales . 13. Liu, X., Zhang, Y., Goswami, The controlled evolution of a Science, 307, 101 D. K., Okasinski, J. S., polymer single crystal. (2005) 1763-1766. Salaita, K., Sun, P., Bedzyk, M. J., Mirkin, C. A. 12. Bhattacharjee, K., Bera, S., Nanoscale self-affine surface Nucl. Instr. Methd. 04 Goswami, D. K. and Dev, B. smoothing by ion bombardment B230, (2005) 524– N. and the morphology of 532. nanostructures grown on ion bombarded surfaces. 11. Goswami, D. K., Ge growth on ion-irradiated Si Surf. Sci. 564, 06 Bhattacharjee, K. and Dev, B. surfaces: Self-affine fractal (2004) 149-155. N. structure. 10. Bera, S., Goswami, D. K., Ion irradiation induced impurity Nucl. Inst. and 08 Bhattacherjee, K., Dev, B. N., redistribution in Pt/C Meth. B212, (2003) Kuri, G., Nomoto, K., and multilayers. 530-534. Yamashita 9. Satpati, B., Goswami, D. K., Energy spike induced effects in Nucl. Inst. and 15 Vaishnav, U. D., Som, T., MeV ion-implanted nanoislands. Meth. B212, (2003) Dev, B. N. and Satyam, P. V. 157-163. 8 Satpati, B., Goswami, D. K., Study of sputtered particles Nucl. Inst. and 21 Kamila, J., Som, T., Dev, B. under thermal spike Meth., B212, (2003) N. and Satyam, P. V. confinement effects. 332-338. 7. Kamila, J., Satpati, B., Low current MeV Au ion- Nucl. Inst. and 14 Goswami, D. K., Rundhe, M., induced amorphization in Meth. B207, (2003) Dev, B. N. and Satyam, P. V. silicon: Rutherford 291-295. Backscattering Spectrometry and Transmission Electron Microscopy study. 6. Satyam, P. V., Kamila, J., Crater formation in gold J. Appl. Phys., 93, 18 Mahapatra, S., Satpati, B., nanoislands due to MeV self-ion (2003) 6399-6401. Goswami, D. K., Dev, B. N., irradiation. Cook, R. E., L Assoufid, Narayanan, S., Wang, J. and Mishra, N. C. 5. Goswami, D. K. and Dev, B. Observation of self-affine fractal Nucl. Inst. and – N. roughness in MeV ion irradiated Meth. B212, (2003) Si surfaces using scanning 253-257. tunneling microscopy. 4. Goswami, D. K., Satpati, B., Growth of self-assembled Current Science, 44 Satyam, P. V. and Dev, B. nanostructures by molecular 84, (2003) 903-910. N.: beam epitaxy. 3. Goswami, D. K. and Dev, B. Nanoscale self-affine surface Phys. Rev. B 68, 28 N. smoothing by ion (2003) 033401-4. bombardment.

Page: 4/8 2. Pathak, A. P., Nageswara Rao, Ion beam studies in strain layer Nucl. Inst. and 08 S. V. S., Siddiqui, A. M., superlattices. Meth. B193, (2002) Lakshmi, G. B. V. S., 319-323. Srivastava, S. K., Bhattacharya, D., Avasthi, D. K., Goswami, D. K., Satyam, P. V. and Dev, B. N.: 1. Ghose, S. K., Goswami, D. . Ion irradiation induced mixing, Appl. Phys. Lett. 25 K., Rout, B., Dev, B. N., Kuri, interface broadening and period 79, (2001) 467-469. G. and Materlik, G. dilation in Pt/C multilayers.

B. Contribution to Books: Books: Journals as Guest Editor

Sl. No Name of the Title Publisher Authors 5 D. K. Goswami et Guest Editors, Special Issue of Applied Springer (2013) al. Nanoscience. Vol. 3(8) (2013) 4 D. K. Goswami et Guest Editors, Special Issue of Journal Taylor & Francis (2013) al. of Experimental Nanoscience. (2013) 3 D. K. Goswami et Guest Editors, Special Issue of Springer Springer (2013) al. Proceedings in Physics, Volume 143 (2013) 2 D. K. Goswami et Guest Editors, Special Issue of Int. World al. J. Nanosceince. Vol. 10, No. 1 & 2 Scientific Publishing, Singapo (2011) re (2011). 1 D. K. Goswami et Editors, Proc. of the International AIP Conf. Proc. Vol. 1276 (Oct al. Conference on 4, 2010), p.1-435. Advanced Nanomaterials and nanotechnology (ICANN-2009)

Books Chapters:

Sl. No Name of the Title Publisher Authors 4. Subbarao, N. V. V. Fabrication of Exceptional High-Performance Materials and and Goswami, D. Ambient Stable Organic Field- Engineered Chemistry. (2017) K. Effect Transistors by Exploiting Edited by: Francisco Torrens, the Polarization of Polar Devrim Balköse and Sabu Thomas, Apple Dielectric Layer Academic Press

3. Goswami. D. K. Room Temperature Growth of Recent Trends in Nanostructured Materials Ag Islands on Si(111) Surfaces and Their Applications.(2008) 34-43. Edited by K. N. Reddy, Excel India Publishers, New Delhi 2. Goswami, D. K., Novel Growth of Ag Islands on Nano-Scale Materials: From Science to Bhattacharjee, K. Si (111) Surfaces by MBE: Technology, (2006) 13 – 24, Edited by S. and Dev, B. N. Plateaus with Atomic Scale N. Sahu et al. Nova Publisher, New York. Preferred Heights. 1. Goswami, D. K., Growth of self-assembled Physics at Surfaces and Interfaces, (2002) Satpati, B., epitaxial germanium 93-98. Edited by B. N. Dev, Satyam, P. V. and nanoislands on silicon surfaces World Scientific, Singapore, Dev, B. N. by molecular beam epitaxy.

D. Published Contributions to Academic Conferences:

Sl. Name of the Authors Title Proceedings No 12. Nimmakayala V. V. Growth and Characterization of N, AIP Conf. Proc. 1576, 42-45 Subbarao, Murali Gedda, V. N′-Dioctadecyl -1, 7- (2014); Suresh, D. Anamika, Dibromo-3, 4, 9, 10- Parameswar K. Iyer, and Perylenetetracarboxylic-Diimide

Page: 5/8 Dipak K. Goswami Micron/Nano Wires for Organic Field Effect Transistors 11 Murali Gedda, Nimmakayala Growth Mechanism of Cobalt(II) AIP Conf. Proc. 1576, 152-154 V. V. Subbarao and Dipak K. Phthalocyanine(CoPc) (2014); Goswami Thin Films on SiO2 and Muscovite Substrates 10 Dipak K. Goswami, Growth of poly-DL-lysine APS March Meeting, Xiaogang Liu, Yi Zhang, John hydrobromide single crystal on Okasinski, Khalid Salaita, mica (001) surfaces. Bulletin of the American Peng Sun, Michael Bedzyk, Physical Society Chad Mirkin 2006, MAR.Q1.14/3 9 Chang-Yong Kim, Jeffrey Imaging of ALD Grown W Atoms APS March Meeting, Elam, Michael Pellin, Dipak on alpha-TiO2 (110) by X-ray K. Goswami, Steven Standing Wave Fourier Inversion Bulletin of the American Christensen, Mark Hersam, Physical Society Peter Stair, Michael Bedzyk 2006APS.MARH12001K 8. Liu, X., Zhang, Y., Controlled evolution of a polymer Fifth International Conference on Goswami, D. K., Okasinski, single crystals Synchrotron Radiation, Chicago, J. S., Salaita, K., Sun, P., SRMS5 Conference, (2006) 266. Bedzyk, M. J., and Mirkin, C.

A. 7. Bhattacharjee, K., Electronic Structure and Stability "5th International Conference on Goswami, D. K and Dev, B. of Atomic-Scale-Height Ag Islands Atomic Level Characterizations N. on Si(111)-(7x7) surfaces: An in- for New Materials and Devices", situ Scanning Tunneling Dec.4-9, 2005, Hawaii, USA, Spectroscopy Study. JSPS-141 committee ACTIVITY Report. (2005) 160. 6. Goswami, D. K., Single Electron Tunneling and the "5th International Conference on Bhattacharjee, K., Effect of Quantum capacitance on Atomic Level Characterizations Jayannavar, A. M. and Dev, Ag Quantum Dot Structures, for New Materials and Devices", B. N. Dec.4-9, 2005, Hawaii, USA. JSPS-141 committee ACTIVITY Report. (2005) 174.

5. Goswami, D. K., Growth of self-assembled INAE Conference on Bhattacharjee, K., Satpati, nanostructures by molecular beam Nanotechnology, B., Roy, S., Satyam, P. V. epitaxy and their characterizations Indian National Academy of and Dev, B. N. by scanning tunneling microscopy Engineering, (2003) 308-316. and spectroscopy.

4. Goswami, D. K., Electronic structure of the Ag Solid State Physics (India), 45, Bhattacharjee, K. and Dev, layers on Si(111) surfaces: A (2002) 333-334. B. N. scanning tunneling microscopy study. 3. Satpati, B., Goswami, D. Self-assembled gold silicide wire Solid Physics State (India), 44, K., Dash, A. K., Satyam, P. growth on Si(110) surface: A (2001) 265-266. V. and Dev, B. N. transmission electron microscopy study. 2. Goswami, D. K., Satpati, Growth of self-assembled Ge Solid State Physics (India), 44, B., Satyam, P. V. and Dev, nanoislands on Si(100) by (2001) 267-268. B. N. molecular beam epitaxy. 1. Das, A. K., Ghose, S. K., Determination of the surface Solid State Physics (India) 43, Goswami, D. K. and Dev, diffusion activation energy by X- (2000) 328-329. B. N. ray reflectometry.

List of Major Conferences Organized:

Sl Name of the Conference Date Organized as National/ no. International

Page: 6/8 1 Emerging Trends on Physics on Surfaces, Nov 24-25, Convener National Interfaces and Nanostructures, IACS, Kolkata 2017 – no. of participants: 50 2 Photonics – 2014, IIT Kharagpur, Dec 13-16, Local Organizer International – no. of participants: 350 2014 3 3rd International Conference on Advanced Dec 1-3, 2013 Convener International Nanomaterials and Nanotechnology (ICANN – 2013), IIT Guwahati, Guwahati – no. of participants: 550 4 2nd International Conference on Advanced Dec 8-10, Chairman International Nanomaterials and Nanotechnology (ICANN – 2011 2013), IIT Guwahati, Guwahati – no. of participants: 550 5 1st International Conference on Advanced Dec 9-11, Convener International Nanomaterials and Nanotechnology (ICANN – 2009 2013), IIT Guwahati, Guwahati – no. of participants: 550

List of Recent Invited Lectures (not exhaustive):

Sl Name of the conferences Place Date no. 1 Workshop in Synchrotron Based Research School of Nanoscience and Technology, Jan 5, 2018 on Surfaces, Interfaces and Nanostructures, IIT Kharagpur 2 Emerging Trends on Physics on Surfaces, Indian Association for the Cultivation of Nov 24-25, Interfaces and Nanostructures Science (IACS), Kolkata 2017 3 Discussion meeting on Synchrotron Science Saha Institute for Nuclear Physics, Dec 13-15, Kolkata 2017 4 Cambridge-JNCASR winter school on Jawaharlal Nehru Centre for Advanced Dec 4-8, Frontiers in Materials Sciences Scientific Research (JNCASR), Bangaluru 2017 5 Frontiers in Physics Hyderabad University, Hyderabad Mar 28-29, 2016 6 2nd International Conference on Haldia Institute of Technology (HIT), Feb 19-22, nanotechnology Haldia 2015 7 18th International Workshop on Physics of Indian Institute of Science, Bangaluru Dec 7-10, Semiconductor Devices (IWPSD - 2015), 2015 8 Alumni Day, Institute of Physics Institute of Physics, Bhubaneswar Sept 3, 2014 9 3rd International Conference on Physics at Puri, Odisha Feb 24-28, Surfaces and Interfaces 2014 10 International Conference on Transport Institute of Advanced Study in Science Dec 11-13, Properties in Low Dimensional System: and Technology (IASST), Guwahati 2014 Experiments and Simulations (TransLES 2014), 11 1st International Conference on Advanced M. G. University, Kottayam Dec 11-13, Materials for Power Engineering (ICAMPE - 2013 2015) 12 3rd International Conference on Advanced Indian Institute of Technology Guwahati, Dec 1-3, Nanomaterials and Nanotechnology Guwahati 2013 (ICANN-2013)

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