United States Patent (19) 11) 4,211,889 Kortier Et Al

Total Page:16

File Type:pdf, Size:1020Kb

United States Patent (19) 11) 4,211,889 Kortier Et Al United States Patent (19) 11) 4,211,889 Kortier et al. 45) Jul. 8, 1980 (54) THERMOELECTRIC MODULE 3,279,954 10/1966 Cody et al. ...... ... 136/205 3,296,033 1/1967 Scuro et al. .......................... 136/205 75) Inventors: William E. Kortier; John J. Mueller; 3,351,498 11/1967 Shinn et al. .......................... 136/205 Philip E. Eggers, all of Columbus, 3,382,109 5/1968 Kendall, Jr. et al. ................ 136/237 Ohio 3,41,955 11/1968 Weiss ................... ... 136/205 73 Assignee: The United States of America as 3,444,005 5/1969 Avis et al. ....... ... 36/205 represented by the Department of 3,510,362 5/1970 Charland et al. ................ 136/205 X Energy, Washington, D.C. Primary Examiner-Harvey E. Behrend Attorney, Agent, or Firm-R. V. Lupo; Frank H. 21 Appl. No.: 761,894 Jackson 22 Filed: Sep. 16, 1968 57 ABSTRACT 51 Int. Cl’............................................... HOW 1/5 A thermoelectric module containing lead telluride as 52 U.S. C. ..................................... 136/237; 136/238 the thermoelectric material is encapsulated as tightly as 58 Field of Search ............... 136/205, 203, 237, 204, possible in a stainless steel canister to provide minimum 136/238,223, 208, 228 void volume in the canister. The lead telluride thermo 56) References Cited electric elements are pressure-contacted to a tungsten U.S. PATENT DOCUMENTS hot strap and metallurgically bonded at the cold junc 2,997,514 8/1961 Roeder, Jr. .......................... 136/204 tion to iron shoes with a barrier layer of tin telluride 3,051,767 8/1962 Fredricket al.... ... 136/205 X between the iron shoe and the p-type lead telluride 3,076,051 1/1963 Haba .................................... 136/204 element. 3,082,276 3/1963 Corry et al. ......................... 136/205 3,232,719 2/1966 Ritchie ............................. 136/237 X 1 Claim, 1 Drawing Figure R N S2 ZZéza NN 2É %2/ N 2. 3 2-/6 N M2 s 23N 2SS26%-ys a NN22 2Z2 2 I 6, 75ZZ == S. 4,211,889 1. 2 reaction of the excess tellurium with the material of the THERMOELECTRIC MODULE hot contact or shoe or by sublimation of the tellurium. It appears that the presence of oxygen in even very CONTRACTUAL ORIGIN OF THE INVENTION small amounts in the atmosphere surrounding the ther The invention described herein was made in the 5 moelectric element promotes the sublimation of tellu course of, or under, a contract with the UNITED U. STATES ATOMIC ENERGY COMMISSION. We have found that we can reduce degradation of the power developed by the thermoelectric element by (a) BACKGROUND OF THE INVENTION employing a tungsten contact at the hot junction of the This invention relates to a thermoelectric module. In 10 p-type element and an iron shoe separated from the more detail the invention relates to a nondegrading lead thermoelectric material by a layer of tin telluride at the telluride thermoelectric module with low contact resis cold junction of the p-type element and by (b) hermeti tance junctions. cally sealing the thermoelectric module within a casing The principle of thermoelectric conversion has been which fits as tightly as possible around the thermoelec known for many years but until recent years has found 15 tric material to provide minimum voids within the cas little other application than in temperature measure ing. ment and control. Recently, however, development of While it is clear that each of these expedients taken power systems for use at remote locations-such as in individually produces improved results, it is also clear space-has become necessary and thermoelectric con that it is only by employing all of the expedients simul version has been utilized for this purpose. 20 taneously that maximum benefits from the invention are Desirable properties for thermoelectric materials attained. include (1) proper free-electron generation characteris tics, i.e., the number of free electrons must be sufficient BRIEF DESCRIPTION OF THE DRAWING to overcome internal electrical resistance, yet not so The drawing is a sketch of a thermoelectric module great as to introduce scattering effects, (2) low thermal 25 constructed in accordance with the present invention. conductivity so that heat cannot flow through the mate Although the sketch is of a module constructed specifi rial without performing some useful work, (3) ability to cally for experimental purposes, an operational module operate at high temperatures, and (3) various additional property requirements depending on the specific appli would not differ from the sketch in details material to cation for the material. 30 the present invention. Because of (1) and (2) above, semiconductor materi DESCRIPTION OF THE PREFERRED als are more efficient thermoelectric materials than EMBODIMENT ordinary metals. One material that has found practical application is lead telluride (PbTe), a binary compound As shown in the drawing, a rectangular thermoelec of lead and tellurium capable of operation at tempera 35 tric module 10 constructed in accordance with the pres tures up to 1100-1200' F. By addition of an impurity (a ent invention includes an n-type lead telluride (PbTe) process referred to as doping) the lead telluride can be thermoelectric element 11 separated from a p-type ther made to operate as an n- or p-thermoelectric material. moelectric element 12 by a mica barrier sheet 13. The Although lead telluride has been used more widely than n-type PbTe element is doped with iodine and excess any other thermoelectric material up to this date, ther lead and the p-type PbTe element is doped with sodium moelectric modules made from lead telluride have not and excess tellurium. These elements are enclosed performed to the levels theoretically available from the within a mica sleeve 14 and the entire unit is hermeti material. An additional problem to that of achieving cally sealed within a stainless steel casing 15 which high-level performance is that of performance degrada tightly encloses the module to provide minimum voids tion during operation of the module. Postoperative 45 within the casing. examinations of elements from modules have identified Thermoelectric module 10 is provided with a tung the p-type elements as being the primary source of the sten hot strap 16 which contacts the hot end of both the trouble; specifically the resistance increases in the hot n-type thermoelectric element 11 and the p-type ther zone of the p-type leg of the thermocouple. This degra moelectric element 12 and with iron shoes 17 and 18 on dation of the module substantially reduces module life 50 the cold ends of the n-type and p-type thermoelectric from that theoretically attainable. elements, respectively. Shoe 17 is brazed directly to A substantial effort has, of course, been made to iden n-type thermoelectric element 11, but shoe 18 is sepa tify the cause of and to suggest means for reducing the rated from p-type thermoelectric element 12 by a bar degradation of lead telluride thermoelectric modules. rier layer 19 of tin telluride. The unit including shoe 18, We feel that we have identified this cause and have 55 barrier layer 19 and element 12 is formed by cold press suggested means whereby degradation of such modules ing and sintering under axial pressure. can be substantially reduced, thereby providing longer Contact between elements 11 and 12 and tungsten hot life for the modules. strap 16 is obtained by the pressure of Belleville springs 20 against copper spring followers 21 which force the SUMMARY OF THE INVENTION n-type and p-type elements against tungsten hot strap We have found that degradation of p-type lead tellu 16. Hot platen 22, which is welded to the top of stainless ride thermoelectric elements can be attributed primarily steel casing 15, resists this pressure. Spring followers 21 to very slight changes in the proportion of tellurium are soldered to iron shoes 17 and 18 using an In-Sn present in the element. P-type lead telluride elements solder. are doped with excess tellurium as well as sodium and 65 A cold sink 23 formed of copper includes a cavity 24 reduction in the amount of tellurium present adversely in which Belleville springs 20 and spring followers 21 affects the performance of the element. This reduction are disposed, a coolant tube 25 extending through the in the amount of tellurium present can occur through cold sink, and a rectangular well 26 which receives the 4,211,889 3 4. free end of casing 15, the well being filled with an epoxy composite of PbTe, SnTe and iron and sintering in resin which serves as a seal 27. Cold sink 23 is electri hydrogen at 1200' F. with an axial load applied. cally divided by electrical insulation 28 to prevent a Elements prepared by both procedures showed an short circuit between the n-type and the p-type thermo acceptable resistance across the bond and a generally electric elements. Electrical contacts, not shown, are, of 5 high level of stability through a cycling period which course, also provided. involved six to eight cycles from a hot-junction temper Thus, it is evident that the design of the containers ature of 980 F. to near room temperature. However, features (1) a welded stainless steel enclosure at the hot during subsequent life testing over an extended period junction and a high-density epoxy seal at the cold junc of time (1000 hours), a significant degradation of power tion of the couple to assure isolation from the environ 10 occurred. Resistance traverses of the elements after ment, (2) an internally contained spring-loading assem testing disclosed a significant increase in material resis bly to maintain the required level of axial pressure on tance in the zone of the hot junction.
Recommended publications
  • Enhanced Thermoelectric Performance of Bulk Tin Telluride: Synergistic Effect of Calcium and Indium Co-Doping
    Materials Today Physics 4 (2018) 12e18 Contents lists available at ScienceDirect Materials Today Physics journal homepage: https://www.journals.elsevier.com/ materials-today-physics Enhanced thermoelectric performance of bulk tin telluride: Synergistic effect of calcium and indium co-doping * ** D. Krishna Bhat a, , U. Sandhya Shenoy b, a Department of Chemistry, National Institute of Technology Karnataka, Surathkal, Mangalore 575025, India b Department of Chemistry, College of Engineering and Technology, Srinivas University, Mukka, Mangalore 574146, India article info abstract Article history: SnTe based materials are considered recently as a lead-free replacement of the well-known PbTe based Received 27 January 2018 thermoelectric (TE) materials in addressing the energy crisis worldwide. Herein we report both exper- Received in revised form imental and theoretical study on the effect of co-doping of calcium and indium on electronic structure 4 February 2018 and TE properties of SnTe. We show that the resonant levels introduced by indium and band gap opening Accepted 12 February 2018 caused by calcium, valence band convergence induced by both calcium and indium, synergistically in- creases the Seebeck coefficient for a wide range of temperatures. The co-doped SnTe with a high ZT of À À ~1.65 at 840 K and record high power factor of ~47 mWcm 1K 2 for SnTe based materials make it a Keywords: Thermoelectric promising material for TE applications. © Band degeneracy 2018 Published by Elsevier Ltd. Resonant levels Tin telluride Introduction similar crystal and electronic structure. Though safer than PbTe, SnTe suffers a drawback of low ZT due to high carrier concentration Exhaustion of non-renewable fossil fuel resources caused due to resulting out of inherent Sn vacancies, smaller band gap (~0.18 eV) its abuse has resulted in ever increasing energy crisis [1].
    [Show full text]
  • Kohn Et Al. [45] Sept. 25, 1973
    “9-25-73 i'XR 367616718. _ , UnIted States Patent 1191 ~ _ 1111 3,761,718 Kohn et al. [45] Sept. 25, 1973 [54] DETECTOR APPARATUS USING 2,949,498 8/1960 Jackson ........................ .. 250/212 x SEMICONDUCTOR LAMINAE 3,324,298 6/1967 Waer . _ . .. 250/211 ‘3,191,045 6/1965 c61man..... 250/211 [75] Inventors: Alan N- Kohn. Brookline; Jack K. 3,473,214 11/1969 Dillman ............................ .. 250/211 Lennard, Framingham', Jay ,1. ' ' Schlickman, Lexington; Robert A. FOREIGN PATENTS OR APPLICATIONS weagan" Chelmsford, 3“ of Mass- 629,924 10/1961 Canada ............................. .. 250/226 [73] Assignee: Honeywell Inc“ Minneapolis’ Minn. 1,043,662 4/l959 Germany .... .................... .. 250/226 [22] Filed: Sept- 7. 1972 OTHER PUBLICATIONS [21] Appl' No'i 287’l94 Marinace; IBM Technical Disclosure Bulletin; Vol. 1 1; Related US. Application Data No. 4; 9/68; p. 398. [63] Continuation-impart of Ser. No. 855,9l8, Sept. 8, 1969' abandoned‘ Primary Examiner-Walter Stolwein AtI0rney—Charles J. Ungemach et al. [521 U.s.c1 ........ ..250/211R,250/226,3l7/235 N, ‘ 356/99, 350/316 [51] Int. Cl. ............................................ ..G0lj3/34 , [581FieldofSearch ................... ..250/211J,211R, [571 ABSTRAQT 250/212’ 226; 317/235 N; 350/316; 356/99’ ‘00 A new multi-layer semiconductor photo detector ar rangement, and scienti?c instruments embodying the [56] References Cited underlying novel principle. UNITED STATES PATENTS 2,896,086 7/1959 Wunderman ..................... .. 250/211 14 Claims, 10 Drawing Figures 3,761,718 1 2 DETECTOR APPARATUS USING similarly illuminated, the output may appear as at B in SEMICONDUCTOR LAMINAE FIG. 2. _ If such a lamina 20 is overlaid with another identical ' BRIEF SUMMARY OF THE INVENTION lamina 23,‘ as shown in FIG.
    [Show full text]
  • Alfa Laval Black and Grey List, Rev 14.Pdf 2021-02-17 1678 Kb
    Alfa Laval Group Black and Grey List M-0710-075E (Revision 14) Black and Grey list – Chemical substances which are subject to restrictions First edition date. 2007-10-29 Revision date 2021-02-10 1. Introduction The Alfa Laval Black and Grey List is divided into three different categories: Banned, Restricted and Substances of Concern. It provides information about restrictions on the use of Chemical substances in Alfa Laval Group’s production processes, materials and parts of our products as well as packaging. Unless stated otherwise, the restrictions on a substance in this list affect the use of the substance in pure form, mixtures and purchased articles. - Banned substances are substances which are prohibited1. - Restricted substances are prohibited in certain applications relevant to the Alfa Laval group. A restricted substance may be used if the application is unmistakably outside the scope of the legislation in question. - Substances of Concern are substances of which the use shall be monitored. This includes substances currently being evaluated for regulations applicable to the Banned or Restricted categories, or substances with legal demands for monitoring. Product owners shall be aware of the risks associated with the continued use of a Substance of Concern. 2. Legislation in the Black and Grey List Alfa Laval Group’s Black and Grey list is based on EU legislations and global agreements. The black and grey list does not correspond to national laws. For more information about chemical regulation please visit: • REACH Candidate list, Substances of Very High Concern (SVHC) • REACH Authorisation list, SVHCs subject to authorization • Protocol on persistent organic pollutants (POPs) o Aarhus protocol o Stockholm convention • Euratom • IMO adopted 2015 GUIDELINES FOR THE DEVELOPMENT OF THE INVENTORY OF HAZARDOUS MATERIALS” (MEPC 269 (68)) • The Hong Kong Convention • Conflict minerals: Dodd-Frank Act 1 Prohibited to use, or put on the market, regardless of application.
    [Show full text]
  • Thermoelectric Properties of Tin Telluride Quasi Crystal Grown by Vertical Bridgman Method
    materials Letter Thermoelectric Properties of Tin Telluride Quasi Crystal Grown by Vertical Bridgman Method 1, 1, 2, 1 1 1, Yue-Xing Chen y, Fu Li y, Delong Li *, Zhuanghao Zheng , Jingting Luo and Ping Fan * 1 Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; [email protected] (Y.-X.C.); [email protected] (F.L.); [email protected] (Z.Z.); [email protected] (J.L.) 2 College of chemistry and environmental engineering, Shenzhen University, Shenzhen 518060, China * Correspondence: [email protected] (D.L.); [email protected] (P.F.) These authors contributed equally to this work. y Received: 23 August 2019; Accepted: 12 September 2019; Published: 16 September 2019 Abstract: Tin telluride (SnTe), with the same rock salt structure and similar band structure of PbTe alloys, was developed as a good thermoelectric material. In this work, SnTe quasi crystal was grown by vertical Bridgman method, with texturing degree achieved at 0.98. Two sets of samples, perpendicular and parallel to the growth direction, were cut to investigate thermoelectric properties. As a result, a carrier concentration (p ) of ~9.5 1020 cm 3 was obtained, which may have originated from fully H × − generated Sn vacancies during the long term crystal growth. The relatively high Seebeck coefficient 1 1 of ~30 µVK− and ~40 µVK− along the two directions was higher than most pristine SnTe reported in the literature, which leads to the room temperature (PF) for SnTe_IP and SnTe_OP achieved at 1 2 1 2 ~14.0 µWcm− K− and ~7.0 µWcm− K− , respectively.
    [Show full text]
  • The Handbook on Optical Constants of Semiconductors : In
    THE HANDBOOK ON OPTICAL CONSTANTS OF SEMICONDUCTORS In Tables and Figures Sadao Adachi Gunma University, Japan World Scientific NEW • • • JERSEY LONDON SINGAPORE BEIJING SHANGHAI • HONG KONG • TAIPEI CHENNA Contents Preface v 1 Introduction 1 1.1 Classification of Semiconductors: Grimm-Sommerfeld Rule 1 1.2 Crystal Structure 4 1.2.1 Atomic Bond 4 1.2.2 Crystal Structure 7 1.3 Dielectric Function: Tensor Representation 7 1.4 Optical Dispersion Relations 10 1.5 Optical Sum Rules 12 1.5.1 Inertial Sum Rule 12 1.5.2 dc-Conductivity Sum Rule 12 1.5.3 /-Sum Rule 13 1.6 Optical Spectra 16 1.6.1 Classification into Several Regions 16 1.6.2 The Reststrahlen Region 17 1.6.3 The Transparent and Interband Transition Regions 19 (a) Critical point 19 (b) The transparent region 21 (c) The interband transition region 24 References 28 vii viii Contents 2 Elemental Semiconductors 31 2.1 Group-IV Elemental Semiconductors 31 2.1.1 Diamond (C) 32 References 38 2.1.2 Silicon (Si) 38 References 45 2.1.3 Germanium (Ge) 45 References 54 2.1.4 Gray Tin (oc-Sn) 54 References 60 2.2 Group-VI Elemental Semiconductors 60 2.2.1 Selenium (Se) 61 References 68 2.2.2 Tellurium (Te) 68 References 76 3 Valence Binary Semiconductors I 77 3.1 IV-IV Binary Semiconductors 77 3.1.1 Cubic Silicon Carbide (3C-SiC) 78 References 85 3.1.2 Hexagonal Silicon Carbides (4H- and 6H-SiC) 85 References 94 3.1.3 Rhombohedral Silicon Carbide (15R-SiC) 95 References 95 3.2 III-V Binary Semiconductors 95 3.2.1 Cubic Boron Nitride (c-BN) 97 References 102 3.2.2 Hexagonal Boron Nitride (h-BN)
    [Show full text]
  • Enhancement of Thermoelectric Properties of Layered
    Rev. Adv. Mater. Sci. 2020; 59:371–398 Review Article Manal M. Alsalama*, Hicham Hamoudi, Ahmed Abdala, Zafar K. Ghouri, and Khaled M. Youssef Enhancement of Thermoelectric Properties of Layered Chalcogenide Materials https://doi.org/10.1515/rams-2020-0023 Received Dec 24, 2019; accepted Apr 27, 2020 1 Introduction Abstract: Thermoelectric materials have long been proven The demand for clean and sustainable energy sources is a to be effective in converting heat energy into electricity growing global concern as the cost of energy is rapidly in- and vice versa. Since semiconductors have been used in creasing; fossil fuel sources have been shown to affect the the thermoelectric field, much work has been done to im- environment. Considering that a large amount of our uti- prove their efficiency. The interrelation between their ther- lized energy is in the form of heat and that a large amount moelectric physical parameters (Seebeck coefficient, elec- of other forms of utilized energy is wasted as heat, the trical conductivity, and thermal conductivity) required spe- search for a suitable technology to recover this wasted cial tailoring in order to get the maximum improvement heat and limit its harmful effects is essential. Among sev- in their performance. Various approaches have been re- eral technologies used to meet these demands, thermoelec- ported in the research for developing thermoelectric per- tric energy is considered to be of the most interest due to formance, including doping and alloying, nanostructur- its unique capabilities. Thermoelectric generators can con- ing, and nanocompositing. Among different types of ther- vert wasted heat into electrical energy.
    [Show full text]
  • Carrier Concentration Dependence of Structural Disorder in Thermoelectric
    research papers Carrier concentration dependence of structural IUCrJ disorder in thermoelectric Sn1ÀxTe ISSN 2052-2525 MATERIALSjCOMPUTATION Mattia Sist,a Ellen Marie Jensen Hedegaard,a Sebastian Christensen,a Niels Bindzus,a Karl Frederik Færch Fischer,a Hidetaka Kasai,a,b Kunihisa Sugimotoc and Bo Brummerstedt Iversena* Received 20 January 2016 aCenter for Materials Crystallography, Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, Accepted 5 August 2016 Aarhus C, DK-8000, Denmark, bFaculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305-8571, Japan, and cJapan Synchrotron Radiation Research Institute, I-I-I, Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, Japan. *Correspondence e-mail: [email protected] Edited by C. Lecomte, Universite´ de Lorraine, France SnTe is a promising thermoelectric and topological insulator material. Here, the presumably simple rock salt crystal structure of SnTe is studied comprehensively Keywords: tin telluride; anharmonicity; by means of high-resolution synchrotron single-crystal and powder X-ray maximum entropy method; disorder; synchrotron X-ray diffraction. diffraction from 20 to 800 K. Two samples with different carrier concentrations (sample A = high, sample B = low) have remarkably different atomic Supporting information: this article has displacement parameters, especially at low temperatures. Both samples contain supporting information at www.iucrj.org significant numbers of cation vacancies (1–2%) and ordering of Sn vacancies possibly occurs on warming, as corroborated by the appearance of multiple phases and strain above 400 K. The possible presence of disorder and anharmonicity is investigated in view of the low thermal conductivity of SnTe. Refinement of anharmonic Gram–Charlier parameters reveals marginal anharmonicity for sample A, whereas sample B exhibits anharmonic effects even at low temperature.
    [Show full text]
  • Investigation of Thermoelectric Properties of Lead-Free Tin Telluride and Skutterudite
    Investigation of Thermoelectric Properties of Lead-free Tin Telluride and Skutterudite A thesis submitted in Partial Fulfillment of the Degree of Master of Science as a part of Integrated Ph.D. Programme (Chemical Science) By Ananya Banik New Chemistry Unit Jawaharlal Nehru Centre for Advanced Scientific Research (A deemed University) Bangalore, India (March 2015) Dedicated to my beloved parents I II Declaration I hereby declare that this thesis entitled “Investigation of Thermoelectric Properties of Lead-free Tin Telluride and Skutterudite” is an authentic record of research work that has been carried out by me at Solid State Chemistry Laboratory, New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, India under supervision of Dr. Kanishka Biswas. This work has not been submitted elsewhere for the award of any degree or diploma. Whenever contributions of others are required, every effort is made to indicate it clearly, with due reference to the literature, and acknowledgement of collaborative research and discussions. Date : Bangalore, India Ananya Banik III IV Certificate Certified that the work described in this thesis titled “Investigation of Thermoelectric Properties of Lead-free Tin Telluride and Skutterudite” has been carried out by Ms. Ananya Banik at Solid State Chemistry Laboratory, New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, India under my supervision and that it has not been submitted elsewhere for the award of any degree or diploma. Date : Bangalore, India Dr. Kanishka Biswas (Research Supervisor) V VI Acknowledgements Completion of my M.S. thesis necessitated a lot of guidance and supports from many people. I take this opportunity to mention a few of them.
    [Show full text]
  • FECH"Awr~C 2
    CHEMICAL FRACTIONATIONS IN SOLAR COMPOSITION MATERIAL by MELVIN BRUCE FEGLEY, JR. S.B., MASSACHUSETTS INSTITUTE OF TECHNOLOGY (1975) SUBMITTED IN PARTIAL FULFILLMENT OF THE REQUIREMENTS OF THE DEGREE OF DOCTOR OF PHILOSOPHY IN EARTH AND PLANETARY SCIENCE at the MASSACHUSETTS INSTITUTE OF TECHNOLOGY June 1980 QMassachusetts Institute of Technology 1980 Signature of Author 7 Department of Earth and Pl netary Sciences May 5, 1980 Certified by John S. Lewis Thesis Supervisor Accepted by , -,_ Theodore Madden Committee irman, Department J -FECH"awR~c 2 CHEMICAL FRACTIONATIONS IN SOLAR COMPOSITION MATERIAL by MELVIN BRUCE FEGLEY, JR. Submitted to the Department of Earth and Planetary Sciences on April 25, 1980 in partial fulfillment of the requirements for the Degree of Doctor of Philosophy in Earth and Planetary Science ABSTRACT Chemical thermodynamic techniques are used to study three diverse problems in meteoritics and planetary science. The problems are volatile element fractionations in the solar nebula, barium titanate condensation in the solar nebula, and the thermochemistry of selected trace elements in the atmosphere of Jupiter. Chemical equilibrium calculations for the alkalis, halo- gens, and phosphorus are reported for two extreme models of accretion. A comparison of the predicted condensates in the two accretion models with available observations of Na, K, F, Cl, Br and P abundances in the terrestrial planets and with the observed mineralogy of ordinary chondrites indicates that available data are compatible with a close approach to chemi- cal equilibrium in the inner regions of the solar nebula. The observation of pure BaTiO 3 particles in the Allende meteorite has stimulated the development of a simple and con- sistent model to explain the observations.
    [Show full text]
  • Inorganic Materials Research Division Annual Report 1971
    LBL-425 UC-2 Genera!,Miscellaneous, and Progress Reports TID-4500 (59th Ed.) d INORGANIC MATERIALS RESEARCH DIVISION ANNUAL REPORT 1971 April 1972 -NOTICE- This report was prepared as an account of work sponsored by the United States Government. Neither the United States nor the United States Atomic Energy Commission, nor any of their employees, nor any of their contractors, subcontractors, or their employees, mBkes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, com­ pleteness or usefulness of any information, apparatus, product or process disclosed, or represents that its use would not infringe privately owned rights. Lawrence Berkeley Laboratory University of California Berkeley, California MOTflWJTW* Of THIS BOCUWtMT IS OtH-WTM Work done under U.S. Atomic Energy Commission Contract No. W-7405-eng-48 Printed in the United States of America Available from National Technical Information Service U.S. Department of Commerce 5285 Port Royal Road Springfield, Virginia 22151 Price: Printed Copy $3.00; Microfiche $0.95 -iii- INORGANIC MATERIALS RESEARCH DIVISION ANNUAL REPORT. 1971* Contents GENERAL INTRODUCTION xi I. CHEMISTRY A. Inorganic Chemistry William L. Jolly, Principal Investigator 1. X-Ray Photoelectron Spectroscopy 1 2. Studies of the Hydrides of Groups TV and V 2 3. Studies in Liquid Ammonia 5 4. Boron Hydride Chemistry 6 5. Sulfur-Nitrogen Chemistry 7 f. Research Plans for Calendar Year 1972 7 7. 1971 Publications and Reports 8 Robert E. Conniak, Prinoipal Investigator 1. Water Exchange from the First Coordination Sphere of Some Diamagnetic Ions 10 2. Oxygen-17 NMR Studies of Waters in the Second Coordination Sphere of Cr3+ ....
    [Show full text]
  • Solid Solutions of Both Massive Materials and Thin Films
    Chalcogenide Letters Vol. 15, No. 3, March 2018, p. 173 - 180 PHYSICOCHEMICAL PROPERTIES OF Sn(S1-xTex) SOLID SOLUTIONS OF BOTH MASSIVE MATERIALS AND THIN FILMS A. ARISWANa*, R. PRASETYOWATI a, H. SUTRISNOb aDepartment of Physics Education, Faculty of Mathematics and Natural Sciences, University Negeri Yogyakarta, Yogyakarta 55281, Indonesia bDepartment of Chemistry Education, Faculty of Mathematics and Natural Sciences, University Negeri Yogyakarta, Yogyakarta 55281, Indonesia The Sn(S1-xTex) solid solutions have been prepared on both massive materials and thin films with variation of x value of 0, 0.2, 0.4, 0.6, 0.8, and 1.0. The massive materials were prepared by Bridgman technique, while the thin films were obtained with vacuum evaporation technique. Phase and crystal structure of both massive materials and thin films were investigated by X-ray diffraction (XRD). The chemical compositions were determined by energy dispersive X-ray spectroscopy (EDAX). Especially for thin films, the surface morphology was studied by scanning electron microscopy (SEM), while the optical properties were obtained by UV-Vis-NIR spectrophotometers. The results show that the crystalline structures of all materials have an orthorhombic structure when dominated by sulfur atom, while having a cubic structure for tellurium atom dominance. All samples are p-type semiconductors and the optical properties show a reduction of the band gaps when the tellurium atomic composition increases. (Received January 8, 2018; Accepted March 22, 2018) Keywords: Bridgman technique, Vacuum evaporation techniques, Solid solutions 1. Introduction Tin chalcogenide nanoparticles, SnS and SnTe have received considerable attention because of their interesting optoelectronic properties. Tin monosulfide (SnS) is p-type semiconductors that attract the attention of the researchers in the context of photovoltaic conversion.
    [Show full text]
  • Cdte Solar Cells: Growth Phenomena and Device Performance
    Durham E-Theses CdTe solar cells: growth phenomena and device performance Major, Jonathan How to cite: Major, Jonathan (2008) CdTe solar cells: growth phenomena and device performance, Durham theses, Durham University. Available at Durham E-Theses Online: http://etheses.dur.ac.uk/605/ Use policy The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that: • a full bibliographic reference is made to the original source • a link is made to the metadata record in Durham E-Theses • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders. Please consult the full Durham E-Theses policy for further details. Academic Support Oce, Durham University, University Oce, Old Elvet, Durham DH1 3HP e-mail: [email protected] Tel: +44 0191 334 6107 http://etheses.dur.ac.uk CdTe solar cells: growth phenomena and device performance By Jonathan Major, MPhys The copyright of this thesis rests with the author or the university to which it was submitted. No quotation from it, or information derived from it may be published without the prior written consent of the author or university, and any information derived from it should be acknowledged. 1 8 DEC 2008 A thesis presented in candidature for the degree of Doctor of Philosophy in the University of Durham Department of Physics June 2008 Abstract A systematic study is presented on the control of CdTe and CdS layers during their growth, with the understanding gained being implemented in the production of solar cells with enhanced performance.
    [Show full text]