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Organic magnetoresistance based on hopping theory

Yang Fu-Jiang, Xie Shi-Jie Citation:Chin. Phys. B, 2014, 23 (9): 097306 doi: 10.1088/1674-1056/23/9/097306

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Prof. Xu Cen-Ke Department of Physics，University of California, Santa Barbara, CA 93106, USA 薛其坤 教授, 院士 Prof. Academician Xue Qi-Kun 清华大学物理系, 北京 100084 Department of Physics, Tsinghua University, Beijing 100084, China 叶 军 教授 Prof. Ye Jun Department of Physics, University of Colorado, Boulder, Colorado 80309- 0440，USA 张振宇 教授 Prof. Z. Y. Zhang Oak Ridge National Laboratory, Oak Ridge, TN 37831–6032, USA 编编编 辑辑辑 Editorial Staff 王久丽 Wang Jiu-Li 章志英 Zhang Zhi-Ying 蔡建伟 Cai Jian-Wei 翟 振 Zhai Zhen 郭红丽 Guo Hong-Li Chin. Phys. B Vol. 23, No. 9 (2014) 097306

Organic magnetoresistance based on hopping theory∗

Yang Fu-Jiang(杨福江) and Xie Shi-Jie(解士杰)† School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

(Received 26 December 2013; revised manuscript received 5 March 2014; published online 23 July 2014)

For the organic magnetoresistance (OMAR) effect, we suggest a spin-related hopping of carriers (polarons) based on Marcus theory. The mobility of polarons is calculated with the master equation (ME) and then the magnetoresistance (MR) is obtained. The theoretical results are consistent with the experimental observation. Especially, the sign inversion of the MR under different driving bias voltages found in the experiment is predicted. Besides, the effects of molecule disorder, hyperfine interaction (HFI), polaron localization, and temperature on the MR are investigated.

Keywords: hopping, organic magnetoresistance, master equation, hyperfine interaction PACS: 73.50.–h, 72.20.Ee, 75.47.–m DOI: 10.1088/1674-1056/23/9/097306

1. Introduction states.[17] Bloom et al. assigned the sign inversion behavior Organic spintronics have generated considerable interest to a transition from a single-carrier regime to a double-carrier [18] in recent years[1,2] due to the long spin lifetimes of organic regime. Up to now, the underlying mechanism of OMAR is semiconductors (OSCs) as well as the flexibility, low cost, still under debate. Most of the mechanisms that have been pro- and chemical tunability of organic devices.[3–5] In the last posed to explain OMAR are involved with the spin dependent [19–21] few years, magnetic field-modulated resistance of organic de- transport of charged spin carriers (polarons). It is usually vices, named organic magnetoresistance (OMAR), has been suggested that the external magnetic field together with the hy- widely studied.[6,7] Usually, an OMAR value around 0–15% perfine interaction (HFI) of hydrogen nuclei act on the spin of [22,23] has been observed in a number of organic materials at room polarons and affect their transport among molecules. As temperature under a low magnetic field (in the scale of mT). a point of view, the mobility-related theory has been widely OMAR behaviors display universal line shapes that can be supported. For example, Ding et al. showed that the or- 2 2 2 ganic magnetic-field effect (OMFE) has a close relationship fitted by empirical Lorentzian B /(B + B0), non-Lorentzian 2 [8,9] [24] et al [B/(|B| + B0)] or their combination. Some are also fitted with the carrier mobility. In addition, Veeraraghavan . n 2 4 2 4 with power law B , f1/B + f2/B , or d1B + d2B (in these measured the magnetoresistance (MR) in polyfluorene devices formulae, B is the applied magnetic field, B0 and the rest of and found that the magnetic field effect acts on the carrier mo- [25] the symbols are fitting coefficients).[10,11] Both positive and bility rather than carrier density. Li et al. studied the ve- negative OMAR have been reported in the OSCs, exhibiting locity of polaron based on a quantum quasi-band model and a transition between negative and positive depending on the gave a rational explanation for MR found in small molecule voltage and the concrete samples.[9,12–15] For example, Mer- devices.[26] Based on percolative hopping transport, Harman mer et al. reported the MR of a polyfluorene device under and Flatte´ provided a description of OMAR for positionally different bias voltages. They found that the MR shows a sign disordered organic materials. They analytically obtained the inversion from negative to positive as the voltage increases.[8] MR and the results agree with some measurements.[27] As Besides, Kang et al. reported the sign change in OMAR of most organic materials have an amorphous structure, transport an Alq3 film with the morphological change from amorphous takes place mainly by hopping of localized carriers between to crystalline state upon annealing.[15] The investigation of the sites (molecules) instead of the band transport. The localized sign change could provide vital clues for further unraveling the carriers are spin-sensitive to the external magnetic field and the origin of OMAR. Some explanations for the sign change have hyperfine field.[21] In this paper, we try to consider spin depen- been reported,[12,14,16–18] and generally it has been thought dent polaron transport with the master equation (ME).[28–30] that different signs of OMAR correspond to differences in the The spin orientation is determined by the external magnetic microscopic mechanism under different device operating con- field as well as the HFI. As an approach, we suppose that a ditions. For example, Desai et al. described the changes in the polaron keeps its spin orientation during hopping. The model MR are a result of the reduction in the triplet exciton concen- details are described in Section 2. Results and discussion are tration and the reduced role of free carrier trapping at triplet given in Section 3. Finally, in Section 4, a conclusion is made. ∗Project supported by the National Basic Research Program of China (Grant No. 2010CB923402), the National Natural Science Foundation of China (Grant Nos. 11174181 and 21161160445), and the Program of Introducing Talents of Discipline to Universities, China (Grant No. B13029). †Corresponding author. E-mail: [email protected] © 2014 Chinese Physical Society and IOP Publishing Ltd http://iopscience.iop.org/cpb http://cpb.iphy.ac.cn 097306-1 Chin. Phys. B Vol. 23, No. 9 (2014) 097306

2. Model and method cal hyperfine field 퐵hpf,i. The ground state of the polaron is   Z↑ We consider a localized polaron at site i, and its spin is solved to be φG = , so we get the probability of spin up Z↓ determined by the external magnetic field B and the internal effective hyperfine field Bhpf,i. The Hamiltonian of the system 2 Z↑ can be written as p↑ = i 2 2 Z↑ + Z↓ Hˆi = −gµB푠ˆ · 퐵 − gµB푠ˆ · 퐵hpf,i and the probability of spin down = −gµBBsˆz − gµBBhpf,i (sˆz cosθi + sˆx sinθi), (1) 2 where g is the electronic g-factor, µB is the Bohr magneton,푠 ˆ Z↓ p↓ = 1 − p↑ = . is the electronic spin operator,s ˆ ands ˆ are the z and x com- i i 2 2 z x Z↑ + Z↓ ponents of the electronic spin, respectively, and θi is the angle between the magnetic field 퐵 (along the z axis) and the lo- Equation (1) can be written as

    1 gµBB + gµBBhpf,i cosθi gµBBhpf,i sinθi Ai δi Hˆi = − = − . (2) 2 gµBBhpf,i sinθi −gµBB − gµBBhpf,i cosθi δi −Ai

1 Here, δi = 2 gµBBhpf,i sinθi. It can be seen from the formula spin-related system, the ME can be written as that the spin of site i is the mixed state of spin up and spin dn is = [−ω n (1 − n ) + ω n (1 − n )], (5) down states due to the existence of δi. Then the results of the dt ∑ i j is js ji js is s j6=i probabilities pi are given as n i q where is is the occupancy number of polarons at site with  2 22  Ai + A + δ spin s. In the steady state dn /dt = 0, equation (5) is solved  ↑ 1 i i is  pi = q ,  2 2 2 2 2 through an iteration procedure. Firstly, we set the energy lev-  Ai + δi + Ai Ai + δi (3) els {εis} from a Gaussian distribution of width σ. The hy- 2  ↓ 1 δ  i perfine field is set as B = B , and the angles {θi} obey  pi = q . hyp,i hyp  2 2 2 2 2  Ai + δi + Ai Ai + δi a uniform distribution. The polaron density of the system is n = NT/M = ∑Ns/M, where NT and Ns are the total polaron We suppose that a polaron keeps its spin orientation dur- s population of the system and the total polaron population of ing hopping under a low carrier density. In our work, to de- spin s, respectively, and M is the total number of the sites. scribe the transport of the system, we need to know the hop- s During the calculation, Ns = NT ∑ pi /M. The iteration is car- ping rate of a polaron. The charge hopping rate ωi j is de- i k+1 k k scribed by the Marcus formula, which can be written as ried out till the difference of (nis − nis)/nis between two successive calculations is smaller than a given small value for 2  1/2  2  ti j π (λ + ε j − εi) each site i, where k is the iteration number. ωi j= exp − , (4) h¯ kBTλ 4kBTλ When the stable distribution nis is obtained, the mobility of the route of spin s is given by where h¯ is the reduced Planck constant, ti j = t0 exp(−2γRi j) is the transfer integral between molecules i and j, t0 is a constant, 1 µs(B) = ∑ωi jnis(1 − n js)Ri j,x. (6) Ri j = 푅 j − 푅i is the distance between the two molecules, γ NsE i, j is the inverse localization length of the localized wave func- While the total mobility of the system is tions, kB is the Boltzmann constant, π is the circumference ratio, T is the temperature, and ε is the on-site energy of site i µT(B) = ∑Nsµs(B)/NT. (7) i. The energy differences in Eq. (4) are supposed to contain s a contribution −eERi j,x due to an electric field E in the x di- Therefore, rection (e is the charge of the carriers), λ is the reorganization µT(0) − µT(B) MR = . energy responding to the charge moving from site i to j.[31] µT(B) To determine the mobility of organic devices, the model In calculation, we take a regular cubic molecular lattice of hopping between different sites has been investigated by with the total number of sites M= 50×50×50. The molecule the ME method.[29,30] The ME approach has an advantage: it nearest neighbor distance (lattice constant) a = 1 nm. The √ guarantees the steady state solution. When it comes to the hopping takes place to a maximum distance of dmax = 3a 097306-2 Chin. Phys. B Vol. 23, No. 9 (2014) 097306 and we apply periodic boundary conditions. The reorganiza- energy is λ = 0.1 eV. From the relation of λ = |eEλ a|, we 6 tion energy is λ = 0.1 eV. The simulation is carried out under conclude the electric field is close to Eλ = 1 × 10 V/cm. It a low carrier density n = 0.01 and the temperature is set as can be seen from the figure that the mobilities µ↑ and µ↓ both T = 300 K. The mobility is averaged over twenty samples to have a peak value near Eλ . reduce statistical errors as much as possible. The effects of the electric field on the MR are calculated by the ME. As shown in Fig.2, the MR is negative at a low 3. Results and discussion electric field. As the electric field increases, the MR’s absolute value drops. Finally, the MR changes its sign at a higher elec- OMAR is found to appear complex from a large number tric field. For the electric field is related to the bias voltage, the of experimental measurements on organic devices. It is asso- experimental data (squares, triangles, and circles) under differ- ciated with the concrete organic materials and the polarity of ent driving voltages are shown for comparison.[14] It is found the device, as well as the driving voltage and temperature. that the theoretical simulation coincides well with the experi- 1.2 mental data. Under these parameters, our results show that the sign of OMAR changes from negative to positive as the bias 1.0 µ↑ increases. As is shown in Fig.1, the mobility reaches a peak

-1

s 6 S 0.8 value near Eλ = 1 × 10 V/cm. The electric field correspond-

-1 µ↓

V

S ing to the sign change of OMAR is also close to Eλ , so we

2 0.6 deduce the mobility’s behavior results in the sign inversion.

/cm 0.4

µ

0.2 0.4 σ/. eV 0 0 1 2 3 0.2 σ/. E/106 V Scm -1 eV Fig. 1. Dependence of polaron mobility on the strength of the driving 0

electric field under magnetic field B = 30 mT. The parameters are set MR/% σ/. −1 eV as σ = 0.05 eV, t0 = 0.1 eV, Bhyp = 10 mT, and γ = 1 nm . -0.2

The electric field dependence of mobility is impor- σ/. eV -0.4 tant to understand the transport property of an organic de- 0 50 100 150 200 vice. Time-of-flight mobility measurements showed that B/mT the field dependence in many OSCs approximates the Fig. 3. Dependence of MR on B under different energetic disorder √ 5 Poole–Frenkel form i.e., µ=µ exp(γ E), where µ and widths σ. The parameters are set as E = 1 × 10 V/cm, t0 = 0.1 eV, 0 0 0 B = 10 mT, and γ = 1 nm−1. [32] hyp γ0 are the constants. As shown in Fig.1, the mobil- ity shows a similar Poole–Frenkel behavior in a low inten- For amorphous organic materials, the parameter σ is the sity electric field. While in a strong electric field when description of the disorder extent of the system. The system

eERi j,x are comparable or larger than the reorganization will be more disordered when σ becomes larger, and the mo- energy, the mobility decreases with an increase of the elec- bility of OSCs increases as σ decreases. As shown in Fig.3, tric field. This performance is described as Marcus in- the MR’s sign changes from negative to positive as σ de- verted region behavior. In our work, the reorganization creases. We set ∆G = ε j − εi − eERi j,x from Eq. (4). Thus σ works together with the electric field to influence the energy differences. When the electric field is constant, the energetic 0.3 6 U=2.75 V, E=1.14×10 V/cm disorder width σ can also change the MR’s sign. Recently, 0.2 Kang et al. investigated OMAR of an Alq3 film with the mor- 0.1 phological change from amorphous to crystalline state upon 0 annealing. They found that the sign of the MR changes from U=2.5 V, E=9.69×10 5 V/cm MR/% -0.1 negative to positive when the structure of the system changes U E ×105 [15] -0.2 =2.0 V, =9.17 V/cm from disorder to order. Our results show the same sign in- version. -0.3 The indispensable role of HFI from the hydrogen nu- 0 50 100 150 200 B/mT clear spins is proposed in the mechanism of understand- Fig. 2. Dependence of MR on B under different electric fields. The ex- ing on OMAR nearly at the time when strong OMAR is perimental data (squares, triangles, and circles) under different driving found. For instance, Nguyen et al. compared the magneto– voltages are also shown for comparison.[14] The parameters are set as −1 σ = 0.05 eV, t0 = 0.1 eV, Bhyp = 10 mT, and γ = 1 nm . electroluminescence response in organic light-emitting diodes 097306-3 Chin. Phys. B Vol. 23, No. 9 (2014) 097306 based on π-conjugated polymers made of protonated and ent transport characteristics. In the present model, the local- deuterated hydrogen (the latter has a weaker HFI strength).[33] ization of a polaron is reflected by parameter γ which is the They reported that the device based on the D-polymers inverse localization length of the wave functions. A small γ shows substantially narrower magneto–electroluminescence means a large polaron and so a large hopping integral between response, which demonstrates that the HFI does indeed have molecules. We can see from Eq. (4) that the mobility decreases a crucial role in OMFE. Qin et al. studied OMFE from a exponentially with the localization of the polaron. As shown phenomenological theory and found that OMFE behavior is in Fig.5, the MR value becomes larger for a stronger localized sensitive to HFI.[34] Especially, they obtained that the satu- polaron. It indicates that, in organic materials, the MR should rated magnetoconductance value is independent of HFI, which be much more apparent than in their inorganic counterparts. is consistent with the experimental observation (see Fig. 3 in The temperature dependence of the MR on the magnetic Ref. [34]). In our work, the strong HFI reduces the influences field is shown in Fig.6. In our simulation, the MR value is of the magnetic field. As shown in Fig.4, OMAR changes negative at a low temperature under these parameters. When when we change the strength of HFI. For a strong HFI, it is the temperature becomes high, the MR’s absolute value de- found that a large magnetic field is needed for the MR’s value creases. Finally, the MR value becomes positive at a higher to saturate. In addition, we note that the saturated MR value is temperature. We set σˆ =σ/kBT and we can see that the tem- independent of HFI. This result is in good agreement with the perature also influences the system’s disorder property. As the experimental measurement.[33] temperature increases, the value of σˆ drops. Thus the system’s disorder strength decreases. Therefore, the results in Fig.6 are 0 consistent with those in Fig.3, which shows the MR depen- dence of energetic disorder widths. Besides, the temperature’s -0.05 [35] Bhyp =15 mT influence on spin relaxation is also important, and we will

-0.10 Bhyp =10 mT investigate the relative effect on the MR in future.

Bhyp =5 mT -0.15

MR/% 0.2 T/ K -0.20 0

-0.25 -0.2 0 50 100 150 200 T/ K

MR/% -0.4 B/mT Fig. 4. Dependence of MR on B under different hyperfine fields -0.6 5 T/ Bhyp. The parameters are set as σ = 0.05 eV, E = 9.17 × 10 V/cm, K −1 -0.8 t0 = 0.1 eV, and γ = 1 nm . 0 50 100 150 200 B/mT 0 Fig. 6. Dependence of MR on B under different temperatures. The pa- 5 -1 rameters are set as σ = 0.05 eV, E = 9.17 × 10 V/cm, t0 = 0.1 eV, γ=1 nm −1 -0.5 Bhyp = 10 mT, and γ = 1 nm .

-1.0 4. Conclusion γ=2 nm-1

MR/% -1.5 We use the ME to calculate the mobility of the system.

-2.0 Under a low carrier density, the polaron is assumed to hop γ=5 nm-1 with its spin orientation unchanged. By choosing suitable pa- -2.5 rameters, the theoretical simulation is well consistent with the 0 50 100 150 200 experimental observation. It is found that OMAR is dependent B/mT upon the material properties as well as the operating condi- Fig. 5. Dependence of MR on B under different localization factors tions. Our simulation shows that the sign of OMAR changes γ. The parameters are set as σ = 0.05 eV, E = 9.17 × 105 V/cm, t0 = 0.1 eV, and Bhyp = 10 mT. from negative to positive as the electric field increases. Be- sides, the sign inversion of MR also happens when energetic In normal inorganic semiconductors, the carriers are usu- disorder parameter decreases. MR will reach its saturation ally extended electrons or holes, which are extended over the slower for a stronger HFI, which reveals the importance of HFI whole crystal lattice. While in OSCs, the charged carriers are in OMAR. As the carriers in OSCs are localized polarons, it localized polarons due to the strong electron-lattice interac- is found that the MR value becomes larger for a stronger lo- tion. The difference in carrier property results in the differ- calized polaron. It explains why an apparent MR is obtained 097306-4 Chin. Phys. B Vol. 23, No. 9 (2014) 097306 in an OSC rather than in its inorganic counterpart. Besides, in [17] Desai P, Shakya P, Kreouzis T and Gillin W P 2007 J. Appl. Phys. 102 our simulation, the MR’s temperature dependence is consis- 073710 [18] Bloom F L, Wagemans W, Kemerink M and Koopmans B 2007 Phys. tent with that of the energetic disorder widths dependence. Rev. Lett. 99 257201 [19] Prigodin V N, Bergeson J D, Lincoln D M and Epstein A J 2006 Synth. Met. 156 757 References [20] Desai P, Shakya P, Kreouzis T and Gillin W P 2007 Phys. Rev. B 75 [1] Dediu V, Murgia M, Matacotta F C, Taliani C and Barbanera S 2002 094423 Solid State Commun. 122 181 [21] Bobbert P A, Nguyen T D, van Oost F W A, Koopmans B and Wohlge- [2] Xiong Z H, Wu D, Vardeny Z V and Shi J 2004 Nature 427 821 nannt M 2007 Phys. Rev. Lett. 99 216801 [3] Chen B B, Jiang S W, Ding H F, Jiang Z S and Wu D 2014 Chin. Phys. [22] Kersten S P, Meskers S C J and Bobbert P A 2012 Phys. Rev. B 86 B 23 018104 045210 [4] Ren J F, Zhang Y B and Xie S J 2007 Acta Phys. Sin. 56 4785 (in [23] Sheng Y, Nguyen T D, Veeraraghavan G, Mermer O,¨ Wohlgenannt M, Chinese) Qiu S and Scherf U 2006 Phys. Rev. B 74 045213 [5] Yin S, Min W J, Gao K, Xie S J and Liu D S 2011 Chin. Phys. B 20 [24] Ding B F, Yao Y, Sun Z Y, Wu C Q, Gao X D, Wang Z J, Ding X M, 127201 Choy W C H and Hou X Y 2010 Appl. Phys. Lett. 97 163302 [6] Davis A H and Bussmann K 2004 J. Vac. Sci. Technol. A 22 1885 [25] Veeraraghavan G, Nguyena T D, Sheng Y, Mermer O¨ and Wohlgenannt [7] Francis T L, Mermer O,¨ Veeraraghavan G and Wohlgenannt M 2004 M 2007 J. Phys.: Condens. Matter 19 036209 New J. Phys. 6 185 [26] Li X X, Dong X F, Lei J, Xie S J and Saxena A 2012 Appl. Phys. Lett. [8] Mermer O,¨ Veeraraghavan G, Francis T L, Sheng Y, Nguyen D T, 100 142408 Wohlgenannt M, Kohler A, Al-Suti M K and Khan M S 2005 Phys. [27] Harmon N J and FlatteM´ E 2012 Phys. Rev. Lett. 108 186602 Rev. B 72 205202 [28] Yu Z G, Smith D L, Saxena A, Martin R L and Bishop A R 2000 Phys. [9] Shakya P, Desai P, Somerton M, Gannaway G, Kreouzis T and Gillin Rev. Lett. 84 721 WP 2008 J. Appl. Phys. 103 103715 [29] Yu Z G, Smith D L, Saxena A, Martin R L and Bishop A R 2001 Phys. [10] Martin J L, Bergeson J D, Prigodin V N and Epstein A J 2010 Synth. Rev. B 63 085202 Met. 160 291 [30] Pasveer W F, Cottaar J, Tanase C, Coehoorn R, Bobbert P A, Blom P W [11] Kang H, Park C H, Lim J, Lee C, Kang W and Yoon C S 2012 Org. M, de Leeuw D M and Michels M A J 2005 Phys. Rev. Lett. 94 206601 Electron. 13 1012 [31] Marcus R A 1993 Rev. Mod. Phys. 65 599 [12] Wang F J, Bassler¨ H and Vardeny Z V 2008 Phys. Rev. Lett. 101 236805 [32] Blom P W M, de Jong M J M and van Munster M G 1997 Phys. Rev. B [13] Bloom F L, Wagemans W and Koopmans B 2008 J. Appl. Phys. 103 55 R656 07F320 [33] Nguyen T D, Markosian G H, Wang F, Wojcik L, Li X G, Ehrenfreund [14] Bergeson J D, Prigodin V N, Lincoln D M and Epstein A J 2008 Phys. E and Vardeny Z V 2010 Nat. Mater. 9 345 Rev. Lett. 100 067201 [34] Qin W, Yin S, Gao K and Xie S J 2012 Appl. Phys. Lett. 100 233304 [15] Kang H, Lee I J and Yoon C S 2012 Appl. Phys. Lett. 100 073302 [35] Qin W, Zhang Y B and Xie S J 2010 Acta Phys. Sin. 59 3494 (in Chi- [16] Hu B and Wu Y 2007 Nat. Mater. 6 985 nese)

097306-5 Chinese Physics B

Volume 23 Number 9 September 2014

RAPID COMMUNICATION

096803 Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition Yang He, Shen Cheng-Min, Tian Yuan, Wang Gao-Qiang, Lin Shao-Xiong, Zhang Yi, Gu Chang-Zhi, Li Jun- Jie and Gao Hong-Jun

097103 Emergent reversible giant electroresistance in spacially confined La0.325Pr0.3Ca0.375MnO3 wires Cui Li-Min, Li Jie, Wang Jia, and Zheng Dong-Ning 097302 Remote excitation and remote detection of a single quantum dot using propagating surface plasmons on silver nanowire Li Qiang, Wei Hong and Xu Hong-Xing 098101 High quality sub-monolayer, monolayer, and bilayer graphene on Ru(0001) Xu Wen-Yan, Huang Li, Que Yan-De, Li En, Zhang Hai-Gang, Lin Xiao, Wang Ye-Liang, Du Shi-Xuan and Gao Hong-Jun

GENERAL

090201 Stability analysis of multi-group deterministic and stochastic epidemic models with vaccination rate Wang Zhi-Gang, Gao Rui-Mei, Fan Xiao-Ming and Han Qi-Xing 090202 A meshless algorithm with moving least square approximations for elliptic Signorini problems Wang Yan-Chong and Li Xiao-Lin 090203 Group solution for an unsteady non-Newtonian Hiemenz flow with variable fluid properties and suc- tion/injection H. M. El-Hawary, Mostafa A. A. Mahmoud, Reda G. Abdel-Rahman and Abeer S. Elfeshawey 090204 Homotopic mapping solitary traveling wave solutions for the disturbed BKK mechanism physical model Zhou Xian-Chun, Shi Lan-Fang, Han Xiang-Lin and Mo Jia-Qi 090301 Unsuitable use of spin and pseudospin symmetries with a pseudoscalar Cornell potential L. B. Castro and A. S. de Castro 090302 New 3-mode bosonic operator realization of SU(2) Lie algebra: From the point of view of squeezing Da Cheng, Chen Qian-Fan and Fan Hong-Yi 090303 New approach to solving master equations of density operator for the Jaynes Cummings model with cavity damping Seyed Mahmoud Ashrafi and Mohammad Reza Bazrafkan 090304 Exact solution of Dirac equation for Scarf potential with new tensor coupling potential for spin and pseudospin symmetries using Romanovski polynomials A. Suparmi, C. Cari and U. A. Deta

(Continued on the Bookbinding Inside Back Cover) 090305 Derivation of quantum Chernoff metric with perturbation expansion method Zhong Wei, Ma Jian, Liu Jing and Wang Xiao-Guang 090306 Comments on “Distillability sudden death in qutrit qutrit systems under thermal reservoirs” Mazhar Ali 090307 Joint remote preparation of an arbitrary five-qubit Brown state via non-maximally entangled channels Chang Li-Wei, Zheng Shi-Hui, -Ze, Xiao Da and Yang Yi-Xian 090308 Efficient remote preparation of arbitrary two- and three-qubit states via the 휒 state Ma Song-Ya and Luo Ming-Xing 090309 Quantum secure direct communication network with hyperentanglement Chang Ho Hong, Jino Heo, Jong In Lim and Hyung Jin Yang 090310 Fast implementation of length-adaptive privacy amplification in quantum key distribution Zhang Chun-Mei, Li Mo, Huang Jing-Zheng, Patcharapong Treeviriyanupab, Li Hong-Wei, Li Fang-Yi, Wang Chuan, Yin Zhen-Qiang, Chen Wei, Keattisak Sripimanwat and Han Zhen-Fu 090311 Landau damping and frequency-shift of a quadrupole mode in a disc-shaped rubidium Bose–Einstein condensate Rahmut Arzigul, Peng Sheng-Qiang and Ma Xiao-Dong 090401 Erratum: Classical interpretations of relativistic precessions Sankar Hajra 090501 Effects of Levy´ noise and immune delay on the extinction behavior in a tumor growth model -Li, Xu Wei, Gu Xu-Dong and Qi Lu-Yuan 090502 Generation of countless embedded trumpet-shaped chaotic attractors in two opposite directions from a new three-dimensional system with no equilibrium point Sun Chang-Chun 090503 Synchronous implementation of optoelectronic NOR and XNOR logic gates using parallel synchroniza- tion of three chaotic lasers Yan Sen-Lin 090601 Fabrication and measurement of traceable pitch standard with a big area at trans-scale Deng Xiao, Li Tong-Bao, Lei Li-Hua, Ma Yan, Ma Rui, Weng Jun-Jing and Li Yuan 090701 Third-order optical intensity correlation measurements of pseudo-thermal light Chen Xi-Hao, Wu Wei, Meng Shao-Ying and Li Ming-Fei 090702 Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs Peng Chao, Hu Zhi-Yuan, Ning Bing-Xu, Huang Hui-Xiang, Fan Shuang, Zhang Zheng-Xuan, Bi Da-Wei and En Yun-Fei

ATOMIC AND MOLECULAR PHYSICS

093101 Molecular structure and analytical potential energy function of SeCO Zhang Heng, Tian Duan-Liang and Yan Shi-Ying

(Continued on the Bookbinding Inside Back Cover) 093201 Microwave photonic filter with a continuously tunable central frequency using an SOI high-Q microdisk resonator Liu Li, Yang Ting and Dong Jian-Ji 093202 Electric dipole moments of lithium atoms in Rydberg states Dong Hui-Jie, Huang Ke-Shu, Li Chang-Yong, Zhao Jian-Ming, Zhang Lin-Jie and Jia Suo-Tang 093203 Atomic structure calculations for F-like tungsten Sunny Aggarwal 093204 Controllable optical mirror of cesium atoms with four-wave mixing Zhou Hai-Tao, Wang Dan, Guo Miao-Jun, Gao Jiang-Rui and Zhang Jun-Xiang 093205 Isolated attosecond pulse generation from atom radiated by a three-color laser pulse Qin Yue-Fei, Guo Fu-Ming, -Yu, Yang Yu-Jun and Chen Gao 093701 An effective method of accelerating Bose gases using magnetic coils Lu Hai-Chang, Zhai Yue-Yang, Pan Rui-Zhi and Yang Shi-Feng 093702 Comparison experiments of neon and helium buffer gases cooling in trapped 199Hg+ ions linear trap Yang Yu-Na, Liu Hao, He Yue-Hong, Yang Zhi-Hui, Wang Man, Chen Yi-He, She Lei and Li Jiao-Mei

ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS 094201 Solving the atmospheric scattering optical transfer function using the multi-coupled single scattering method Sun Bin, Hong Jin and Sun Xiao-Bing 094202 Scattering of a general partially coherent beam from a diffuse target in atmospheric turbulence Wang Li-Guo, Wu Zhen-Sen, Wang Ming-Jun, Cao Yun-Hua and Zhang Geng 094203 Characterization of graphene-based photonic crystal in THz spectrum with finite-difference time domain method Lin Hai, Xu Di, M. F. Pantoja, S. G. Garcia and Yang He-Lin 094204 Evolution of entanglement between qubits ultra-strongly coupling to a quantum oscillator Ma Yue, Dong Kun and Tian Gui-Hua 094205 Influence of a phonon bath in a quantum dot cavity QED system: Dependence of the shape Wang Wei-Sheng, Zhang Ming-Liang and Chen Zhi-De 094206 Compression of the self-Q-switching in semiconductor disk lasers with single-layer graphene saturable absorbers Yu Zhen-Hua, Tian Jin-Rong and Song Yan-Rong 094207 Specific mode output from multimode fiber oscillators by designing rare earth doping profiles Wang Wen-Liang, Huang Liang-Jin, Leng Jin-Yong, Guo Shao-Feng and Jiang Zong-Fu

094208 33 W quasi-continuous-wave narrow-band sodium D2a2a2a laser by sum-frequency generation in LBO Wang Peng-Yuan, Xie Shi-Yong, Bo Yong, Wang Bao-Shan, Zuo Jun-Wei, Wang Zhi-Chao, Shen Yu, Zhang Feng-Feng, Wei Kai, Jin Kai, Xu Yi-Ting, Xu Jia-Lin, Peng Qin-Jun, Zhang Jing-Yuan, Lei Wen-Qiang, Cui Da-Fu, Zhang Yu-Dong and Xu Zu-Yan

(Continued on the Bookbinding Inside Back Cover) 094209 Fabrication of large-scale ripples on fluorine-doped tin oxide films by femtosecond laser irradiation Han Yan-Hua, , Zhao Xiu-Li and Qu Shi-Liang

094210 Observation of tropospheric NO2 by airborne multi-axis differential optical absorption spectroscopy in the Pearl River Delta region, south China Xu Jin, Xie Pin-Hua, Si Fu-Qi, Li Ang, Wu Feng-Cheng, Wang Yang, Liu Jian-Guo, Liu Wen-Qing, Andreas Hartl and Chan Ka Lok 094211 Retinal axial focusing and multi-layer imaging with a liquid crystal adaptive optics camera Liu Rui-Xue, Zheng Xian-Liang, Li Da-Yu, Xia Ming-Liang, Hu Li-Fa, Cao Zhao-Liang, Mu Quan-Quan and Xuan Li 094212 Designing analysis of the polarization beam splitter in two communication bands based on a gold-filled dual-core photonic crystal fiber Fan Zhen-Kai, Li Shu-Guang, Fan Yu-Qiu, Zhang Wan, An Guo-Wen and Bao Ya-Jie 094213 Radiation-induced attenuation self-compensating effect in super-fluorescent fiber source Yang Yuan-Hong, Suo Xin-Xin and Yang Wei 094501 Bifurcation and chaos analysis of a nonlinear electromechanical coupling relative rotation system Liu Shuang, Zhao Shuang-Shuang, Sun Bao-Ping and -Ming 094502 Nonlinear saturation amplitude of cylindrical Rayleigh Taylor instability Liu Wan-Hai, Yu Chang-Ping, Ye Wen-Hua and Wang Li-Feng

PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES

095201 Three-dimensional PIC/MCC simulation of electron deposition in JAEA 10 A ion sources Yang Chao, Yin Mao-Wei, Shang Li-Ping and Wei Ai-Yong 095202 Characteristics of a large gap uniform discharge excited by DC voltage at atmospheric pressure Li Xue-Chen, Bao Wen-Ting, Jia Peng-Ying, Zhao Huan-Huan, Di Cong and Chen Jun-Ying

CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES

096101 Photoelectric characteristics of silicon P–N junction with nanopillar texture: Analysis of X-ray photo- electron spectroscopy Liu Jing, Wang Jia-Ou, Yi Fu-Ting, Wu Rui, Zhang Nian and Ibrahim Kurash

096102 Transient competition between photocatalysis and carrier recombination in TiO2 nanotube film loaded with Au nanoparticles Shao Zhu-Feng, Yang Yan-Qiang, Liu Shu-Tian and Wang Qiang 096103 Uniaxial strain-dependent magnetic and electronic properties of (Ga,Mn)As nanowires Zhang Chen-Hui, Xiang Gang, Lan Mu and Zhang Xi 096104 Structural stability and electronic properties of carbon star lattice monolayer Fan Xue-Lan, Niu Chun-Yao, Wang Xin-Quan, Wang Jian-Tao and Li Han-Dong

096201 Anisotropy of elasticity and minimum thermal conductivity of monocrystal M4AlC3 (푀 = Ti, Zr, Hf) Ding Ai-Ling, Li Chun-Mei, Wang Jin, Ao Jing, Li Feng and Chen Zhi-Qian

(Continued on the Bookbinding Inside Back Cover) 096202 Converging spherical and cylindrical elastic–plastic waves of small amplitude Hu Qiu-Shi and Zhao Feng 096203 Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface rough- ening treatment with nano-sized Ni mask Tao Tao, Zhi Ting, Li Ming-Xue, Xie Zi-Li, Zhang Rong, Liu Bin, Li Yi, Zhuang Zhe, Zhang Guo-Gang, Jiang Fu-Long, Chen Peng and Zheng You-Dou 096204 Shear viscosity of aluminum studied by shock compression considering elasto-plastic effects Ma Xiao-Juan, Hao Bin-Bin, Ma Hai-Xia and -Sheng 096401 Biometric feature extraction using local fractal auto-correlation Chen Xi and Zhang Jia-Shu 096402 Phase behaviors of binary mixtures composed of banana-shaped and calamitic mesogens M. Cvetinov, D. Z.ˇ Obadovic,´ M. Stojanovic,´ A. Vajda, K. Fodor-Csorba, N. Eber and I. Ristic´ 096501 Thermal conductivity of multi-walled carbon nanotubes: Molecular dynamics simulations Hu Guo-Jie and Cao Bing-Yang

096801 Characterization of tetragonal distortion in a thick Al0.2Ga0.8N epilayer with an AlN interlayer by Rutherford backscattering/channeling Wang Huan and Yao Shu-De 096802 Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst , Wang Gang, Yang Huai-Chao, An Tie-Lei, Chen Min-Jiang, Yu Fang, Tao Li, Yang Jian-Kun, Wei Tong-Bo, Duan Rui-Fei and Sun Lian-Feng

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTI- CAL PROPERTIES

097101 Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy M. Asghar, K. Mahmood, M. A. Hasan, I. T. Ferguson, R. Tsu and M. Willander 097102 An analytic model for gate-all-around silicon nanowire tunneling field effect transistors Liu Ying, , Chan Mansun, Du Cai-Xia, Ye Yun, Zhao Wei, Wu Wen, Deng Wan-Ling and Wang Wen- Ping 097201 Effect of traps’ adjacency on the electric field dependence of mobility in organic systems He Yun, Chen Xiao-Qing and Hou Xiao-Yuan 097301 Band-stop optical nanofilters with split-ring resonators based on metal–insulator–metal structure Zhang Hui-Yun, Shen Duan-Long, Zhang Yu-Ping, Yang Wei-Jie, Yuan Cai, Liu Meng, Yin Yi-Heng and -Xin

097303 Deep-ultraviolet surface plasmon resonance of Al and Alcore/Al2O3shell nanosphere dimers for surface- enhanced spectroscopy Ci Xue-Ting, Wu Bo-Tao, Song Min, Chen Geng-Xu, Liu Yan, Wu E and Zeng He-Ping

097304 Intersubband transitions in In푥Al(1−푥)N/In푦Ga(1−푦)N quantum well operating at 1.55 µm Hassen Dakhlaoui

(Continued on the Bookbinding Inside Back Cover) 097305 Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors Zhao Sheng-Lei, Wang Yuan, Yang Xiao-Lei, Lin Zhi-Yu, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua and Hao Yue 097306 Organic magnetoresistance based on hopping theory Yang Fu-Jiang and Xie Shi-Jie 097307 Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range Wu Mei, Zheng Da-Yong, Wang Yuan, Chen Wei-Wei, Zhang Kai, Ma Xiao-Hua, Zhang Jin-Cheng and Hao Yue 097308 Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate Jiang Chao, Lu Hai, Chen Dun-Jun, Ren Fang-Fang, Zhang Rong and Zheng You-Dou

097401 Fabrication and properties of high performance YBa2Cu3O7−δ radio frequency SQUIDs with step-edge Josephson junctions Liu Zheng-Hao, Wei Yu-Ke, Wang Da, Zhang Chen, Ma Ping and Wang Yue 097501 Effects of rotating noncircular scatterers on spin-wave band gaps of two-dimensional magnonic crystals Yang Hui, Yun Guo-Hong and Cao Yong-Jun

097502 Magnetic phase transition and magnetocaloric effect in Mn1−xZnxCoGe alloys Shen Cheng-Juan, Liu Qiang, Gong Yuan-Yuan, Wang Dun-Hui and Du You-Wei 097503 Magnetic behaviors of cerium oxide-based thin films deposited using electrochemical method Peng Ying-Zi, Li Yuan, Bai Ru, Huo De-Xuan and Qian Zheng-Hong 097504 Micromagnetic simulation of Sm–Co/α-Fe/Sm–Co trilayers with various angles between easy axes and the film plane Zhang Xi-Chao, Zhao Guo-Ping, Xia Jing, Yue Ming, Yuan Xin-Hong and Xie Lin-Hua

097505 Multiferroic properties and exchange bias in Bi1−xSrxFeO3 (푥 = 0–0.6) ceramics Ma Zheng-Zheng, Li Jian-Qing, Chen Zi-Peng, Tian Zhao-Ming, Hu Xiao-Jun and Huang Hai-Jun

097701 Dielectric and ferroelectric properties of Sr4CaSmTi3Nb7O30 with tetragonal tungsten bronze structure Gong Gao-Shang, Fang Yu-Jiao, Huang Shuai, Yin Chong-Yang, Yuan Song-Liu and Wang Li-Guang

097702 Transport properties and anomalous fatigue effect of Ag/Bi0.9La0.1FeO3 /La0.7Sr0.3MnO3 heterostruc- tures Gao Rong-Li, Fu Chun-Lin, Cai Wei, Chen Gang, Deng Xiao-Ling, Yang Huai-Wen, Sun Ji-Rong and Shen Bao-Gen 097703 Li–N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method Xie Jian-Sheng and Chen Qiang

097704 Stability and elastic properties of Nb푥C푦 compounds Gao Xu-Peng, Jiang Ye-Hua, Liu Yang-Zhen, Zhou Rong and Feng Jing 3+ 097801 Spectroscopic properties of Yb -doped TeO2–BaO–BaF2–Nb2O5-based oxyfluoride tellurite glasses Lin She-Bao, Wang Peng-Fei, She Jiang-Bo, Guo Hai-Tao, Xu Shen-Nuo, Yu Cheng-Long, Liu Chun-Xiao and Peng Bo

(Continued on the Bookbinding Inside Back Cover) 097802 Effect of disorder on hyperbolic metamaterials Lu¨ Cheng, Li Wei, Jiang Xun-Ya and Cao Jun-Cheng 097803 Silica-covered Au nanoresonators for fluorescence modulating of a graphene quantum dot Wang Su-Feng, He Da-Wei, Wang Yong-Sheng, Hu Yin, Duan Jia-Hua, Fu Ming and Wang Wen-Shuo

INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

098102 Effect of stress state on deformation and fracture of nanocrystalline copper: Molecular dynamics simu- lation Zhang Liang, Lu¨ Cheng, Kiet Tieu, Pei Lin-Qing and Zhao Xing 098103 Characterization of zirconium thin films deposited by pulsed laser deposition Liu Wei, Wan Jing-Ping, Cai Wu-Peng, Liang Jian-Hua, Zhou Xiao-Song and Long Xing-Gui

098104 Fabrication and characterization of direct-written 3D TiO2 woodpile electromagnetic bandgap struc- tures Li Ji-Jiao, Li Bo, Peng Qin-Mei, Zhou Ji and Li Long-Tu

098105 Structures and optical properties of tungsten oxide thin films deposited by magnetron sputtering of WO3 bulk: Effects of annealing temperatures Zhang Feng, Wang Hai-Qian, Wang Song, Wang Jing-Yang, Zhong Zhi-Cheng and Jin Ye 098106 Scatter correction method for cone-beam CT based on interlacing-slit scan Huang Kui-Dong, Zhang Hua, Shi Yi-Kai, Zhang Liang and Xu Zhe 098201 Theoretical insights into the formation of thiolate-protected nanoparticles from gold (III) chloride Zhang Xue-Na, Wang Rong and Xue Gi

098501 Tuning the phase separation in La0.325Pr0.3Ca0.375MnO3 using the electric double-layer field effect Cui Li-Min, Li Jie, Zhang Yu, Zhao Lu, Deng Hui, Huang Ke-Qiang, Li He-Kang and Zheng Dong-Ning

098502 Introduction of F4-TCNQ/MoO3 layers for thermoelectric devices based on pentacene Wu Shuang-Hong, Ryosuke Nakamichi, Masatsugu Taneda, Zhang Qi-Sheng and Chihaya Adachi 098503 Current-induced pseudospin polarization in silicene Wang Lei and Zhu Guo-Bao 098701 Discrete energy transport in collagen molecules Alain Mvogo, Germain H. Ben-Bolie and Timoleon´ C. Kofane´ 098702 Measurment of the energy spectrum of an electron beam extracted from an accelerator Hu Tao and Wang Nai-Yan 098703 Propagation of kink–antikink pair along microtubules as a control mechanism for polymerization and depolymerization processes L. Kavitha, A. Muniyappan, S. Zdravkovic,´ M. V. Sataric,´ A. Marlewski, S. Dhamayanthi and D. Gopi 098704 A modified interval subdividing based geometric calibration method for interior tomography Zhang Feng, Yan Bin, Li Lei, Xi Xiao-Qi and Jiang Hua

098801 Structural properties of a-SiOx:H films studied by an improved infrared-transmission analysis method Wang Shuo, Zhang Xiao-Dan, Xiong Shao-Zhen and Zhao Ying

(Continued on the Bookbinding Inside Back Cover) 098802 Improved performance of P3HT:PCBM solar cells by both anode modification and short-wavelength

energy utilization using Tb(aca)3phen Zhuo Zu-Liang, Wang Yong-Sheng, He Da-Wei and Fu Ming 098901 A novel model and behavior analysis for a swarm of multi-agent systems with finite velocity Wang Liang-Shun and Wu Zhi-Hai 098902 Detecting community structure using label propagation with consensus weight in complex network Liang Zong-Wen, Li Jian-Ping, Yang Fan and Athina Petropulu

GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS

099401 New reconstruction and forecasting algorithm for TEC data Wang Jun, Sheng Zheng, Jiang Yu and Shi Han-Qing 099501 Polarized radiative transfer considering thermal emission in semitransparent media Ben Xun, Yi Hong-Liang and Tan He-Ping 099502 Scintillation characterization for multiple incoherent uplink Gaussian beams Wu Wu-Ming, Ning Yu, Ma Yan-Xing, Xi Fen-Jie and Xu Xiao-Jun