Microwave Measurement Techniques
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Microwave Measurement Techniques A. Nassiri - ANL Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 • P• n Pn • • Noisy BPF Noiseless, R T0 k R ≡ R 00 k T0 k, B R lossless BPF • • • Load • Load 2 νn νn Pn = R = = kTB 2R 4R The maximum power delivered from the noisy resistor is Pn= kTB, which is considered equally across an entire microwave band. A resistor temperature at 3000 k, noise power for a 10kHz bandwidth -17 receiver → Pn =4.14 × 10 W = -176dBW= -146dBm At the standard temperature of 2900 k, the noise power available from a lossy passive network in a 1Hz bandwidth is -174dBm/Hz. Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 2 Signal-to-noise ratio (SNR) S Ps =10log Difficult to measure N dB Pn S + N P + P =10log s n Measurable quantity N dB Pn A receiver produces a noise power of 200mW without signal, as signal is applied, the output level becomes 5W. S + N P + P 5 =10log s n =10log =14dB N dB Pn 0.2 Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 3 Noise figure A figure of merit to measure the degradation of SNR of a system P = S + N i i i P0 = S0 + N0 R,T Noisy 0 network Si R G,B,T Load (S N )i NF = ≥1 NFdB =10log NF ≥ 0dB (S N )o For a passive device with G=1/L and in thermal equilibrium at the temperature T, N0 = kTB = Ni , So =GSi , (S N ) S N NF = i = 0 i = L (S N )o S i N o Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 4 An amplifier with input signal 100µW and the noise power is 1µW. The amplified signal is 1W with noise power 30mW. 1000000 signal gain =10log = 40dB 100 30000 noise gain =10log = 44.7dB > 40dB 1 (S N )i 100 1 NF = = = 3 >1 NFdB = 4.7dB > 0dB (S N )o 1000 30 An amplifier with NF 6dB has an input SNR=40dB, (S N )i S S NF = → = − NFdB = 40 − 6 = 34dB (S N )o N o dB N i dB Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 5 Equivalent noise temperature: the absolute temperature to generate the same noise power, not the physical temperature of the device equivalent noise temperature Te ≡ Pn /kB Pn P • n White noise R source 0 Load ≡ R T e k R • (S N ) R NF = i (S N ) Pi=Si + Ni P0=S0 + N0 o S i Gk(T0 +Te ) = B Noisy network kT B GS R, T0 R 0 i Si G,B, T e Load Te =1+ ≥1 T0 →Te = (NF −1)T0 Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 6 NF of a cascaded circuit G1, F1 G1, F1 • • • G1, F1 (S N ) S N NF = i = i 0 (S N ) S N o 0 i A three-stage amplifier Stage power gain noise figure N N kT0B∏Gi k(NF1 −1)T0B∏Gi 1 10 10dB 2 3dB 1 = i =1 + i =1 N kT B kT B 2 20 13dB 4 6dB G 0 0 ∏ i 3 30 14.8dB 6 7.8dB i =1 N k(NF2 −1)T0B∏Gi Total gain=6000=37.8dB + i =2 + kT0B Total NF=2+[(4-1)/10]+[(6- × k(NFN −1)T0BGn 1)/(10 20)]=2.325=3.66dB + kT0B Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 7 Frequency measurements Two approaches: using frequency counter to measure frequency directly, and using probe to measure the wavelength in a transmission line. Frequency counter approach (1) Basic principle: direct counting <500MHz Input Signal Conditioner Main Count Display Gate Chain Time Gate Base Generator (2) Using frequency down-conversion techniques for microwave signals . Pre-scaling: divider circuit <2GHz Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 8 .Transfer oscillator down-conversion: use PLL to relate the harmonic relationship between the low frequency oscillator and the input microwave signal > 40GHz PSD Input signal Power divider PL CCT fs FIF1 To counter Comb generator fVCO fS = NfVCO-fIF1 Comb generator fVCO ± fo F fs IF1 FIF2 FIF1 ± Nfo To ratio counter Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 9 Harmonic heterodyne: use mixer to harmonically down convert the input microwave signal <20GHz IF amp Input signal Fs ± Kfi = fIF To counter f s fIF Kfi bus YIG pin switch control counter filter fi Comb generator multiplier Microprocessor From counter time base fs = Kfi +fIF Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 10 Wavelength measurement approach Gunn Oscillator PS SWR Meter PS SWR Fixed short Gunn Oscillator Variable Slotted Line Attenuator circuit 35dB • 2 2 2π 2π 2 2 2π 2π kc = ,λc = 2a,β = = k − kc = − λc λg λ λc 2 2 1 1 λ → = + Measure g f c λg 2a Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 11 Distance between two adjacent minima is 1.9cm in a WR-90 waveguide. 90 λg = 2×1.9cm = 3.8cm, a = × 2.54cm = 2.29cm 100 2 2 1 1 = + f c λg 2a 2 2 1 1 = 3×1010cm / sec + =10.26 GHz 3.8cm 2× 2.29cm Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 12 Wavemeter method . Wavemeter structure Resistive material Piston Cavity Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 13 Operating principle Cavity Input Output nλ d = g 2 Input b Output Transmission type Microwave Power Reaction type Meter Standing wave indicator Cavity frequency meter Variable precision attenuator Detector probe Microwave Source 1KHz Square Thermistor mount Wave Modulation Variable flap attenuator Slotted line Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 14 Detection devices Power detector: bolometer (thermistor and barretter), thermocouple voltage detector: crystal detector, Schottky barrier diode, GaAs barrier diode Thermistor: a metallic-oxide component with a negative temperature coefficient of resistance Barretter: a short length of platinum or tungsten wire with a positive temperature coefficient of resistance Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 15 Detection devices Thermocouple: a pair of dissimilar metal (Sb-Bi) wires joined at one end (sensing end) and terminated at the other end (reference end). The difference in temperature produces a proportional voltage. Crystal detector: use the diode square-law to convert input microwave power to detector output voltage Diode Matching Low-pass Filter • Circuit • Microwave Low Input Frequency Output DC Return DC return is as a ground for diode and an RF choke. Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 16 Detection devices Schottky barrier or GaAs barrier diode: high sensitivity noise equivalent power (NEP): the required input power to produce, in 1Hz bandwidth, an output SNR = 1 tangential sensitivity (TSS): the lowest detectable microwave signal power TSS NEP = ,∆f : Vedio Bandwidth 2.5 ∆f Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 17 Power Measurements Difficulty in measuring voltage or current at microwave frequencies → power measurement simpler and more precise Power range: low power <0dBm, medium power 0dBm~40dBm, high power >40dBm power detector sensitivity: diode ~-70dm, thermistor ~-20dBm Thermistor power meter •A • R Wheatstone Bridge R Balance AC Ammeter Adust C • A • D v 10-kHz AC P0 R Source P1 RT Voltmeter • • Microwave B Power in Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 18 Power measurement arrangement . Low power case Consider desired frequency spectrum, circuit mismatch, sensor mismatch, sensor safe margin, accuracy, calibration Generator Power RF Out Meter LPF Attenuator Power DUT or BPF (optional) Sensor Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 19 Power measurement arrangement Medium power case: use directional coupler or attenuator at the DUT (device under test) output Thermistor Generator (0 dBm) Power Meter Power 1 Watt 10 dB Supply Circulator 50Ω Attenuator (+10 dBm) 1 Watt (+30 dBm) 2 Ω 1 Watt 3 dB 1 3 2 Watts 50 Attenuator Amplifier 20 dB Coupler under test Generator Power Thermistor Supply Circulator 50Ω (0 dBm) Power Meter 1 Watt (+30 dBm) 1 Watt 3 dB 30 dB 2 Watts 50Ω Attenuator Attenuator Amplifier under test Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 20 Power measurement arrangement High power case: use directional coupler in reverse direction Power Meter (0 dBm) Thermistor Mount 30 dB Maximum full Attenuator scale +10 dBm (2 Watts) (+30 dB) 100 watts (+50 dBm) 1 2 20 dB Directional Power Coupler Amplifier 3 50 Ω, 1W Termination Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 21 Attenuation Measurements P3 Insertion Loss P P1 2 Source Component Load P4 P1: power to the load without DUT P2: power to the load after inserting DUT P3: power dissipated inside DUT P4: power reflected from DUT P1 ILdB =10log = P1(dBm ) − P2(dBm ) P2 Massachusetts Institute of Technology RF Cavities and Components for Accelerators USPAS 2010 22 If Γ: DUT reflection coefficient and T: DUT transmission coefficient, 2 2 2 1− Γ ILdB = −10logT = −10logT 1− Γ 2 T 2 = −10log(1− Γ 2 )−10log 1− Γ 2 P − P P = −10log 1 4 −10log 2 P1 P1 − P4 = loss due to reflection + loss due to transmission P1 P1 – P4 P2 P4 Insertion loss is the characteristics of DUT itself.