Understanding and Using Electronic Diagrams
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Transistor Circuit Guidebook Byron Wels TAB BOOKSBLUE RIDGE SUMMIT, PA
TAB BOOKS No. 470 34.95 By Byron Wels TransistorCircuit GuidebookByronWels TABBLUE RIDGE BOOKS SUMMIT,PA. 17214 Preface beforemeIa supposepioneer (along the my withintransistor firstthe many field.experiencewith wasother Weknown. World were using WarUnlike solid-stateIIsolid-state GIs) today's asdevices somewhat experimen- receivers marks of FIRST EDITION devicester,ownFirst, withsemiconductors! youwith a choice swipedwhichor tank. ofto a sealed,Here'sexperiment, pairThen ofhow encapsulated, you earphones we carefullywe did had it: from totookand construct the veryonenearest exoticof our the THIRDSECONDFIRST PRINTING-SEPTEMBER PRINTING-AUGUST PRINTING-JANUARY 1972 1970 1968 plane,wasyouAnphonesantenna. emptywound strung jeep,apart After toiletfull outand ofclippingas paper wire,unwoundhigh closelyrollandthe servedascatchthe far spaced.wire offas as itfrom a thewouldsafetyThe thecoil remaining-pin,magnetreach-for form, you inside.which stuckwire the Copyright © 1968by TAB BOOKS coatedNext,it into youneeded,a hunkribbons of -ofwooda razor -steel, soblade.the but point Oh,aItblued was noneprojected placedblade of the -quenchat so fancy right the pointplastic-bluedangles.of -, Reproduction or publicationPrinted inof the ofAmerica the United content States in any manner, with- themindfoundphoneground pin you,the was couldserved right not wired contact lacquerspotas toa onground blade, it. theblued.blade'sAconnector, pin,bayonet bluing,and stuck antennaand you hilt thecould coil.-deep other actuallyIfin ear- youthe isoutherein. assumed express -
Electronic Circuit Design and Component Selecjon
Electronic circuit design and component selec2on Nan-Wei Gong MIT Media Lab MAS.S63: Design for DIY Manufacturing Goal for today’s lecture • How to pick up components for your project • Rule of thumb for PCB design • SuggesMons for PCB layout and manufacturing • Soldering and de-soldering basics • Small - medium quanMty electronics project producMon • Homework : Design a PCB for your project with a BOM (bill of materials) and esMmate the cost for making 10 | 50 |100 (PCB manufacturing + assembly + components) Design Process Component Test Circuit Selec2on PCB Design Component PCB Placement Manufacturing Design Process Module Test Circuit Selec2on PCB Design Component PCB Placement Manufacturing Design Process • Test circuit – bread boarding/ buy development tools (breakout boards) / simulaon • Component Selecon– spec / size / availability (inventory! Need 10% more parts for pick and place machine) • PCB Design– power/ground, signal traces, trace width, test points / extra via, pads / mount holes, big before small • PCB Manufacturing – price-Mme trade-off/ • Place Components – first step (check power/ground) -- work flow Test Circuit Construc2on Breadboard + through hole components + Breakout boards Breakout boards, surcoards + hookup wires Surcoard : surface-mount to through hole Dual in-line (DIP) packaging hap://www.beldynsys.com/cc521.htm Source : hap://en.wikipedia.org/wiki/File:Breadboard_counter.jpg Development Boards – good reference for circuit design and component selec2on SomeMmes, it can be cheaper to pair your design with a development -
Integrated Circuits
CHAPTER67 Learning Objectives ➣ What is an Integrated Circuit ? ➣ Advantages of ICs INTEGRATED ➣ Drawbacks of ICs ➣ Scale of Integration CIRCUITS ➣ Classification of ICs by Structure ➣ Comparison between Different ICs ➣ Classification of ICs by Function ➣ Linear Integrated Circuits (LICs) ➣ Manufacturer’s Designation of LICs ➣ Digital Integrated Circuits ➣ IC Terminology ➣ Semiconductors Used in Fabrication of ICs and Devices ➣ How ICs are Made? ➣ Material Preparation ➣ Crystal Growing and Wafer Preparation ➣ Wafer Fabrication ➣ Oxidation ➣ Etching ➣ Diffusion ➣ Ion Implantation ➣ Photomask Generation ➣ Photolithography ➣ Epitaxy Jack Kilby would justly be considered one of ➣ Metallization and Intercon- the greatest electrical engineers of all time nections for one invention; the monolithic integrated ➣ Testing, Bonding and circuit, or microchip. He went on to develop Packaging the first industrial, commercial and military ➣ Semiconductor Devices and applications for this integrated circuits- Integrated Circuit Formation including the first pocket calculator ➣ Popular Applications of ICs (pocketronic) and computer that used them 2472 Electrical Technology 67.1. Introduction Electronic circuitry has undergone tremendous changes since the invention of a triode by Lee De Forest in 1907. In those days, the active components (like triode) and passive components (like resistors, inductors and capacitors etc.) of the circuits were separate and distinct units connected by soldered leads. With the invention of the transistor in 1948 by W.H. Brattain and I. Bardeen, the electronic circuits became considerably reduced in size. It was due to the fact that a transistor was not only cheaper, more reliable and less power consuming but was also much smaller in size than an electron tube. To take advantage of small transistor size, the passive components too were greatly reduced in size thereby making the entire circuit very small. -
35402 Electronic Circuit R TG
Electricity and Electronics Electronic Circuit Repair Introduction The purpose of this video is to help you quickly learn the most common methods used to trou- bleshoot electronic circuits. Electronic troubleshooting skills are needed to diagnose and repair several types of devices. These devices include stereos, cameras, VCRs, and much more. As mentioned, the program will explain how to diagnose and repair different types of electronic com- ponents and circuits. Viewers will also learn how to use the specialized tools and instruments needed to test these particular types of circuits and components. If students plan to enter any type of electronics field, viewing this program will prove to be beneficial. The program is organized into major sections or topics. Each section covers one major segment of the subject. Graphic breaks are given between each section so that you can stop the video for class discussion, demonstrations, to answer questions, or to ask questions. This allows you to watch only a portion of the program each day, or to present it in its entirety. This program is part of the ten-part series Electricity and Electronics, which includes the following titles: • Electrical Principles • Electrical Circuits: Ohm's Law • Electrical Components Part I: Resistors/Batteries/Switches • Electrical Components Part II: Capacitors/Fuses/Flashers/Coils • Electrical Components Part III: Transformers/Relays/Motors • Electronic Components Part I: Semiconductors/Transistors/Diodes • Electronic Components Part II: Operation—Transistors/Diodes • Electronic Components Part III: Thyristors/Piezo Crystals/Solar Cells/Fiber Optics • Electrical Troubleshooting • Electronic Circuit Repair To order additional titles please see Additional Resources at www.filmsmediagroup.com at the end of this guide. -
Capacitors and Inductors
DC Principles Study Unit Capacitors and Inductors By Robert Cecci In this text, you’ll learn about how capacitors and inductors operate in DC circuits. As an industrial electrician or elec- tronics technician, you’ll be likely to encounter capacitors and inductors in your everyday work. Capacitors and induc- tors are used in many types of industrial power supplies, Preview Preview motor drive systems, and on most industrial electronics printed circuit boards. When you complete this study unit, you’ll be able to • Explain how a capacitor holds a charge • Describe common types of capacitors • Identify capacitor ratings • Calculate the total capacitance of a circuit containing capacitors connected in series or in parallel • Calculate the time constant of a resistance-capacitance (RC) circuit • Explain how inductors are constructed and describe their rating system • Describe how an inductor can regulate the flow of cur- rent in a DC circuit • Calculate the total inductance of a circuit containing inductors connected in series or parallel • Calculate the time constant of a resistance-inductance (RL) circuit Electronics Workbench is a registered trademark, property of Interactive Image Technologies Ltd. and used with permission. You’ll see the symbol shown above at several locations throughout this study unit. This symbol is the logo of Electronics Workbench, a computer-simulated electronics laboratory. The appearance of this symbol in the text mar- gin signals that there’s an Electronics Workbench lab experiment associated with that section of the text. If your program includes Elec tronics Workbench as a part of your iii learning experience, you’ll receive an experiment lab book that describes your Electronics Workbench assignments. -
United States Patent (19) 11
United States Patent (19) 11. Patent Number: 4,503,479 Otsuka et al. 45 Date of Patent: Mar. 5, 1985 54 ELECTRONIC CIRCUIT FOR VEHICLES, 4,244,050 1/1981 Weber et al. .............. 364/431.11 X HAVING A FAIL SAFE FUNCTION FOR 4,245,150 1/1981 Driscoll et al. ................... 361/92 X ABNORMALITY IN SUPPLY VOLTAGE 4,306,270 12/1981 Miller et al. ...... ... 361/90 X 4,327,397 4/1982 McCleery ............................. 361/90 75) Inventors: Kazuo Otsuka, Higashikurume; Shin 4,348,727 9/1982 Kobayashi et al.............. 123/480 X Narasaka, Yono; Shumpei Hasegawa, Niiza, all of Japan OTHER PUBLICATIONS 73 Assignee: Honda Motor Co., Ltd., Tokyo, #18414, Res. Disclosure, Great Britain, No. 184, Aug. Japan 1979. Electronic Design; "Simple Circuit Checks Power-S- 21 Appl. No.: 528,236 upply Faults'; Lindberg, pp. 57-63, Aug. 2, 1980. (22 Filed: Aug. 31, 1983 Primary Examiner-Reinhard J. Eisenzopf Attorney, Agent, or Firm-Arthur L. Lessler Related U.S. Application Data (57) ABSTRACT 63 Continuation of Ser. No. 297,998, Aug. 31, 1981, aban doned. An electronic circuit for use in a vehicle equipped with an internal combustion engine. The electronic circuit (30) Foreign Application Priority Data comprises a constant-voltage regulated power-supply Sep. 4, 1980 (JP) Japan ................................ 55.122594 circuit, a control circuit having a central processing unit 51) Int. Cl. ......................... H02H 3/20; HO2H 3/24 for controlling electrical apparatus installed in the vehi 52 U.S. Cl. ...................................... 361/90; 123/480; cle, and a detecting circuit for detecting variations in 340/661; 364/431.11 supply voltage supplied from the power-supply circuit. -
Integrated Circuit Implementation for a Gan HFET Driver Circuit Bo Wang
University of South Carolina Scholar Commons Faculty Publications Computer Science and Engineering, Department of 2010 Integrated Circuit Implementation for a GaN HFET Driver Circuit Bo Wang Jason D. Bakos University of South Carolina - Columbia, [email protected] Antonello Monti Follow this and additional works at: https://scholarcommons.sc.edu/csce_facpub Part of the Computer Engineering Commons Publication Info Published in IEEE Transactions on Industry Applications, Volume 46, Issue 5, 2010, pages 2056-2067. http://ieeexplore.ieee.org/servlet/opac?punumber=28 © 2010 by the Institute of Electrical and Electronics Engineers (IEEE) This Article is brought to you by the Computer Science and Engineering, Department of at Scholar Commons. It has been accepted for inclusion in Faculty Publications by an authorized administrator of Scholar Commons. For more information, please contact [email protected]. 2056 IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 46, NO. 5, SEPTEMBER/OCTOBER 2010 Integrated Circuit Implementation for a GaN HFET Driver Circuit Bo Wang, Student Member, IEEE, Marco Riva, Member, IEEE, Jason D. Bakos, Member, IEEE, and Antonello Monti, Senior Member, IEEE Abstract—This paper presents the design and implementation (GaN) devices is limited mainly to telecom and low-power ap- of a new integrated circuit (IC) that is suitable for driving the plications [4]–[6]. Currently available driver integrated circuits new generation of high-frequency GaN HFETs. The circuit, based (ICs) designed for power Si-MOSFET can be adapted to drive upon a resonant switching transition technique, is first briefly described and then discussed in detail, focusing on the design GaN HFET devices, but the relatively low switching frequen- process practical considerations. -
Thesis.Pdf (2.413Mb)
Faculty of Engineering Science and Technology Design and construction of a half-bridge using wide-bandgap transistors Fredrik Hausvik Vatshelle Master thesis in Electrical Engineering - June 2019 Title: Design and construction of a half-bridge using wide-bandgap transistors Date: 11 June 2019 Classification: Open Author: Fredrik Hausvik Vatshelle Pages: 68 Attachements: 0 Department: Department of Electrical Engineering Type of study: Electrical Engineering Supervisor: Bjarte Hoff Principal: UiT The Artic University of Norway, Campus Narvik Principal contact: Trond Østrem Key words: Transistors, Wide-bandgap, Half-bridge, Simulation, Testing, Design, Power converters. Abstract A continuously increasing demand of electric power makes energy efficiency imperative in modern technology. The transistor is considered as the fundamental element of modern electronic products. Faster switching, lower losses and higher operation temperatures are some of the features provided by new transistor technology. Their abilities could make way for new converter topologies and design. It is also important to elaborate on the component limitations and to explore their traits. Therefore, thorough research regarding these transistors has been done. This thesis goes through design improvements of a single transistor driver, both in form of simulations and experimental testing. Additionally, it discusses suggested solutions on how to build a snubber circuit, handle over current protection and apply dead time. Possible and preferred solutions for these parts are presented through circuit schemes and explanations. These parts should be put together in a half-bridge, as a building block for power converters. Other necessities, for the half-bridge, like control interface is briefly elaborated. Required circuitry for implementing the single transistor driver, is designed and developed in OrCAD CAPTURE. -
Digital and System Design
Digital System Design — Use of Microcontroller RIVER PUBLISHERS SERIES IN SIGNAL, IMAGE & SPEECH PROCESSING Volume 2 Consulting Series Editors Prof. Shinsuke Hara Osaka City University Japan The Field of Interest are the theory and application of filtering, coding, trans- mitting, estimating, detecting, analyzing, recognizing, synthesizing, record- ing, and reproducing signals by digital or analog devices or techniques. The term “signal” includes audio, video, speech, image, communication, geophys- ical, sonar, radar, medical, musical, and other signals. • Signal Processing • Image Processing • Speech Processing For a list of other books in this series, see final page. Digital System Design — Use of Microcontroller Dawoud Shenouda Dawoud R. Peplow University of Kwa-Zulu Natal Aalborg Published, sold and distributed by: River Publishers PO box 1657 Algade 42 9000 Aalborg Denmark Tel.: +4536953197 EISBN: 978-87-93102-29-3 ISBN:978-87-92329-40-0 © 2010 River Publishers All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, mechanical, photocopying, recording or otherwise, without prior written permission of the publishers. Dedication To Nadia, Dalia, Dina and Peter D.S.D To Eleanor and Caitlin R.P. v This page intentionally left blank Preface Electronic circuit design is not a new activity; there have always been good designers who create good electronic circuits. For a long time, designers used discrete components to build first analogue and then digital systems. The main components for many years were: resistors, capacitors, inductors, transistors and so on. The primary concern of the designer was functionality however, once functionality has been met, the designer’s goal is then to enhance per- formance. -
Parasitic Oscillation (Power MOSFET Paralleling)
MOSFET Parallening (Parasitic Oscillation between Parallel Power MOSFETs) Description This document explains structures and characteristics of power MOSFETs. © 2017 - 2018 1 2018-07-26 Toshiba Electronic Devices & Storage Corporation Table of Contents Description ............................................................................................................................................ 1 Table of Contents ................................................................................................................................. 2 1. Parallel operation of MOSFETs ........................................................................................................... 3 2. Current imbalance caused by a mismatch in device characteristics (parallel operation) ..................... 3 2.1. Current imbalance in steady-state operation ......................................................................................... 3 2.2. Current imbalance during switching transitions ............................................................................. 3 3. Parasitic oscillation (parallel operation) ............................................................................................... 4 3.1. Gate voltage oscillation caused by drain-source voltage oscillation ........................................... 4 3.2. Parasitic oscillation of parallel MOSFETs .......................................................................................... 5 3.2.1. Preventing parasitic oscillation of parallel MOSFETs .............................................................................. -
Integrated Circuit Design Macmillan New Electronics Series Series Editor: Paul A
Integrated Circuit Design Macmillan New Electronics Series Series Editor: Paul A. Lynn Paul A. Lynn, Radar Systems A. F. Murray and H. M. Reekie, Integrated Circuit Design Integrated Circuit Design Alan F. Murray and H. Martin Reekie Department of' Electrical Engineering Edinhurgh Unit·ersity Macmillan New Electronics Introductions to Advanced Topics M MACMILLAN EDUCATION ©Alan F. Murray and H. Martin Reekie 1987 All rights reserved. No reproduction, copy or transmission of this publication may be made without written permission. No paragraph of this publication may be reproduced, copied or transmitted save with written permission or in accordance with the provisions of the Copyright Act 1956 (as amended), or under the terms of any licence permitting limited copying issued by the Copyright Licensing Agency, 7 Ridgmount Street, London WC1E 7AE. Any person who does any unauthorised act in relation to this publication may be liable to criminal prosecution and civil claims for damages. First published 1987 Published by MACMILLAN EDUCATION LTD Houndmills, Basingstoke, Hampshire RG21 2XS and London Companies and representatives throughout the world British Library Cataloguing in Publication Data Murray, A. F. Integrated circuit design.-(Macmillan new electronics series). 1. Integrated circuits-Design and construction I. Title II. Reekie, H. M. 621.381'73 TK7874 ISBN 978-0-333-43799-5 ISBN 978-1-349-18758-4 (eBook) DOI 10.1007/978-1-349-18758-4 To Glynis and Christa Contents Series Editor's Foreword xi Preface xii Section I 1 General Introduction -
Active Gate Drivers for High-Frequency Application of Sic Mosfets
Active Gate Drivers for High-Frequency Application of SiC MOSFETs By Alejandro Paredes Camacho Thesis submitted in partial fulfilment of the requirement for the PhD degree issued by the Universitat Politècnica de Catalunya, in its Electronic Engineering Program. Supervisors: Dr. Jose Luis Romeral Martínez Dr. Vicent M. Sala Caselles Terrassa, Barcelona December 2019 Active gate drivers for high-frequency application of SiC MOSFETs ii A mi madre, María Luisa Camacho Ramos iii Abstract The trend in the development of power converters is focused on efficient systems with high power density, reliability and low cost. The challenges to cover the new power converters requirements are mainly concentered on the use of new switching-device technologies such as silicon carbide MOSFETs (SiC). SiC MOSFETs have better characteristics than their silicon counterparts; they have low conduction resistance, can work at higher switching speeds and can operate at higher temperature and voltage levels. Despite the advantages of SiC transistors, operating at high switching frequencies, with these devices, reveal new challenges. The fast switching speeds of SiC MOSFETs can cause over-voltages and over-currents that lead to electromagnetic interference (EMI) problems. For this reason, gate drivers (GD) development is a fundamental stage in SiC MOSFETs circuitry design. The reduction of the problems at high switching frequencies, thus increasing their performance, will allow to take advantage of these devices and achieve more efficient and high power density systems. This Thesis consists of a study, design and development of active gate drivers (AGDs) aimed to improve the switching performance of SiC MOSFETs applied to high-frequency power converters.