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Defects in Semiconductors St Petersburg, Russia, July 20–24, 2009 Book of a B Str CTS A ICDS-25 STR B 25th International Conference on Defects in Semiconductors St Petersburg, Russia, July 20–24, 2009 BOOK OF A ISBN 978-5-93634-048-2 9 785936340482 ICDS-25 BOOK OF ABSTRACTS CTS A ICDS-25 STR B 25th International Conference on Defects in Semiconductors St Petersburg, Russia, July 20–24, 2009 BOOK OF A ICDS-25 BOOK OF ABSTRACTS 25th International Conference on Defects in Semiconductors St Petersburg, Russia, July 20–24, 2009 www.ioffe.ru/ICDS-25 BOOK OF ABSTRACTS Ioffe Institute St Petersburg, 2009 This volume was compiled at the Information Services & Publishing Department of the Ioffe Institute from texts submitted by authors via Monomax On-line Form. The texts were converted to LATEX2εwithout any revisions. Proofs of all the abstracts were displayed on the Conference website during June 9–24. All the mistakes found by the authors were corrected. ISBN 978-5-93634-048-2 Information Services & Publishing Department Ioffe Institute 26 Politekhnicheskaya, St Petersburg 194021, Russia Phones: (812) 297 2617 Fax: (812) 297 1017 E-mail: [email protected] Printed in Russian Federation Organisers Ioffe Physical-Technical Institute Saint Petersburg State Politechnical University with the assistance of Monomax Congressess & Incentives Sponsors Russian Foundation for Basic Research Russian Academy of Sciences Conference Chair Andrei G. Zabrodskii (Ioffe Institute, Russia) International Advisory Committee Alexander Aseev (Russia) Robert Jones (UK) F. Danie Auret (South Africa) Kohei Itoh (Japan) Brian Bech Nielsen (Denmark, Chair) Hiroshi Katayama-Yoshida (Japan) Marilia Caldas (Brasil) Matthew McCluskey (USA) Anna Cavallini (Italy) Patricia Mooney (Canada) Leszek Dobaczewski (Poland) Michael Stavola (USA) Vadim Emtsev (Russia) Chris Van de Walle (USA) Tom Gregorkiewcz (The Netherlands) Joerg Weber (Germany) Stefan Estreicher (USA) Deren Yang (China) Jan Evans-Freeman (UK) Shengbai Zhang (USA) Eugene Haller (USA) International Programme Committee Vadim V. Emtsev, Chair (Russia) Nikolay Bagraev (Russia) Abdelmajid Mesli (France) Marilia Caldas (Brazil) Risto Nieminen (Finland) Anna Cavallini (Italy) Yutaka Ohno (Japan) Stefan Estreicher (USA) Anthony Peaker (UK) Jan Evans-Freeman (UK) Francesco Priolo (Italy) Eugene Haller (USA) Michael Stavola (USA) Kohei Itoh (Japan) Martin Stutzmann (Germany) Robert Jones (UK) Robert Suris (Russia) Hiroshi Katayama-Yoshida (Japan) Klaus Thonke (Germany) Vladimir Markevich (Bielorus) Eicke Weber (Germany) Abdelmajid Mesli (France) Irina Yassievich (Russia) Local Organising Committee Yurii A. Kumzerov, Chair, Ioffe Institute Dmitrii S. Poloskin, Secretary, Ioffe Institute Olga V. Dudnik, Treasurer, Ioffe Institute Nikolay T. Bagraev, proceedings, Ioffe Institute Ekaterina E. Efremova, Web, publishing, Ioffe Institute Foreword This book contains 416 abstracts of works included in the programme of the 25th International Conference on Defects in Semiconductors (St Petersburg, Russia, July 20–24, 2009). The abstracts are grouped in three chapters: Plenary sessions — abstracts of 3 plenary talks. These sessions include talks which are of general interest for semiconductor physicists. The sessions are held in the Great Hall (A) in the morning of Monday, July 20, and Friday, July 24. Topical sessions — abstracts of 109 invited talks and oral contributions. The title of a session, which a paper belongs to, is indicated at a page header. The list of topical sessions is given in the first table below. The topical sessions are held in parallel in two conference halls, A and B. Poster sessions — abstracts of 304 poster contributions. The sessions take place in the afternoon on Monday, July 20, Tuesday, July 21 and Thursday, July 23. The topic, which a contribution belongs to, is indicated at a page header. The list of topics is presented in the table below. Paper code that appears before each abstract is arranged as follows: for oral presentation Day-Hall-Sequential number of a session in the Hall.Sequential number of a presentation at the sessionPaper type for poster presentation Day-Topic number.Paper number in the topicPaper type. Possible values of Paper type are pl (plenary), i (invited), o (oral) and po (poster). List of topical sessions Paper code Title format Date Defects in InN Mon-A-2.?i,o Defects in diamond Mon-B-1.?o Monday, July 20 Defects in compound semiconductors I Mon-A-3.?i,o Defects in SiC Mon-B-2.?i,o Defects in oxides I Tue-A-1.?i,o Defects in nanostructures I Tue-B-1.?i,o Defects in oxides II Tue-A-2.?i,o Defects in nanostructures II Tue-B-2.?i,o Tuesday, July 21 Defects in compound semiconductors II Tue-A-3.?i,o Defects in nanostructures III Tue-B-3.?i,o Defects in compound semiconductors III Wed-A-1.?i,o Defects at interfaces Wed-B-1.?i,o Wednesday, July 22 Defect engineering Wed-A-2.?o Defects in silicon I Wed-B-2.?i,o Hydrogen in semiconductors I Thu-A-1.?i,o Defects in silicon II Thu-B-1.?i,o Hydrogen in semiconductors II Thu-A-2.?o Defects in isotopically controlled silicon Thu-B-2.?o Thursday, July 23 Defects in low dimensional structures Thu-A-3.?o Defects in germanium Thu-B-3.?i,o Defects in organic semiconductors Thu-A-4.?o Transport phenomena in Si, Ge, and Si-Ge alloys Thu-B-4.?i,o Defects in SiGe Fri-A-2.?i,o Defects in compound semiconductors IV Fri-B-1.?i Friday, July 24 Magnetic impurities Fri-B-2.?o Poster session topics Paper code Topic format Session date Mon-1.??po Monday, July 20 1. Defects in diamond, Si, Ge, SiGe, and SiC Tue-1.??po Tuesday, July 21 Mon-2.??po Monday, July 20 2. Defects in compound semiconductors Tue-2.??po Tuesday, July 21 Thu-2.??po Thursday, July 23 3. Magnetic impurities Thu-3.??po Thursday, July 23 4. Defects in organic semiconductors Thu-4.??po Thursday, July 23 5. Microscopic studies of defects Thu-5.??po Thursday, July 23 6. Positrons and muons in defect studies Thu-6.??po Thursday, July 23 7. Defects at interfaces Thu-7.??po Thursday, July 23 8. Defects in nanostructures and devices Tue-8.??po Tuesday, July 21 9. Defect engineering Tue-9.??po Tuesday, July 21 10. Spintronics and photovoltaics Thu-10.??po Thursday, July 23 Contents PLENARY SESSIONS Applied and basic aspects of defect studies Mon-A-1.1pl S. K. Estreicher, T. M. Gibbons Non-equilibrium molecular dynamics for impurities in semiconductors: vibrational lifetimes and thermal conductivities .............. 39 Mon-A-1.2pl E. R. Weber Semiconductor defect science and technology opening the door to solar energy 39 Spintronics Fri-A-1.1pl K. Sato First-principles material design and perspective on semiconductor spintronics materials ................................. 40 TOPICAL SESSIONS Defects in InN Mon-A-2.1i J. W. Ager Dealing with defects in indium nitride .................. 45 Mon-A-2.2o P. D. C. King, T. D. Veal, C. F. McConville Unintentional conductivity of InN ..................... 45 Mon-A-2.3o N. Miller, J. W. Ager, R. E. Jones, H. M. Smith, K. M. Yu, E. E. Haller, W. Walukiewicz, W. J. Schaff, C. Gallinat, G. Koblmueller, J. S. Speck Electrical and electrothermal transport in InN: roles of point and extended defects .................................. 47 Defects in diamond Mon-B-1.1o L. V. C. Assali, W. V. M. Machado, J. F. Justo 3d transition metal impurities in diamond: electronic properties and chemical trends ................................... 48 Mon-B-1.2o A. A. Shiryaev, M. Wiedenbeck, Th. Hainschwang Oxygen distribution and speciation in bulk of monocrystalline diamonds and its correlations with other impurities ................... 49 Mon-B-1.3o R. Ramos, M. J. Caldas Theoretical study of surface step defects on monohydrogenated (100) diamond surfaces .................................. 50 Mon-B-1.4po E. B. Lombardi Boron-Hydrogen complexes in diamond: energy levels and metastable states 51 Defects in compound semiconductors I II III IV Mon-A-3.1i R. Sielemann, R. Govindaraj, M. Müller, L. Wende, G. Weyer Microscopic observation of vacancy, self-interstitial and the formation of Frenkel pairs by Mössbauer spectroscopy ................. 51 Mon-A-3.2o C. Rauch, F. Reurings, F. Tuomisto, T. D. Veal, C. F. McConville, W. J. Schaff, H. Lu, C. S. Gallinat, G. Koblmueller, J. S. Speck Formation of In vacancies in Si-doped InN ................ 53 Mon-A-3.3o J. Schmitz, J. Penner, K. Lorenz, E. Alves, R. Vianden Stable In-defect complexes in GaN and AlN ............... 54 Mon-A-3.4o F. Reurings, F. Tuomisto, Z. Liliental-Weber, R. E. Jones, K. M. Yu, W. Walukiewicz, W. J. Schaff Irradiation-induced In and N vacancies: dominant donors in InN? .... 54 Mon-A-3.5o D. Yu. Protasov, O. E. Tereshenko, K. S. Zhuravlev, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov Electrical properties and deep traps spectra in AlGaN films with nitrogen and gallium polarities prepared by molecular beam epitaxy .......... 56 Mon-A-3.6o J.-M. M¨aki, F. Tuomisto, L. Kirste, S. M¨uller, M. Kunzer Vacancy defects in Fe doped GaN studied with positron annihilation spectroscopy ............................... 57 Tue-A-3.1i E. V. Lavrov Hydrogen in ZnO ............................. 58 Tue-A-3.2o P. D. C. King, T. D. Veal, C. F. McConville, R. L. Lichti, Y. G. Celebi, D. J. Payne, A. Bourlange, R. G. Egdell, F. Fuchs, F. Bechstedt Defects in In2O3 ............................. 59 Tue-A-3.3o M. Tuerker, P. Reichert, M. Deicher, H. Wolf, Th. Wichert Formation of Indium-acceptor complexes in ZnO ............. 60 Tue-A-3.4o P. G. Baranov, S. B. Orlinskii, C. de Mello Donega, A. Meijerink, J. Schmidt Dynamical nuclear polarization by means of shallow donors in ZnO quantum dots .................................... 61 Tue-A-3.5o B. H. Kong, H. K. Cho, Q. Sun, J. Han, I.-H. Lee Atomic scale correlation between stacking fault density and AlGaN blocking layer in m-plane GaN by transmission electron microscopy .......
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