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3,372,327 É Cmqmlq March 5, ‘i968 R. E. MORGAN 3,372,327 TIME RATIO CONTROL AND INVERTER POWER CIRCUITS , Original Filed Dec. 26, 1963 13 SheetS-Sheet 1 23 m TA Gf E 5 v ê ïöl- @Losse "isf -OPEN 1 L É CMQMLQ, j?" Í March 5, 1968 v R, E, MORGAN > 3,372,327 TIME RATIO CONTROL AND INVERTER POWER CIRCUITS Original Filed Dec. 26, 1963 13 Sheets­~$heet 2 fc + \ 1 l Tl M E -> f‘v Venó'of" /ñ’aymma’f/Vaf' an »5y ¿bww 1€ /WS Ahí-orne? March 5, l1968 R. E. MORGAN 3,3 72,327 TIME RATIO CONTROL AND INVERTER POWER CIRCUITS Original Filed Dec. 26, 1963 13 Sheets-Sheet 5 fg.. + E5 f77 Veñó'or* Éaymona’ ¿Í/Vor' an March 5, 1968 R. E.- MORGAN _3,372,327 TIME RATIO CONTROL AND INVERTER POWER CIRCUITS Original Filed Dec. 26, 1965 13 Sheets~$heet 4 elkT @1000ps-_- T C "îc b d , 300,15*] Aïe* TIME j \ a? B T c ñ'j' á'î "ÈLC Bowan/L“U ' TIME U c . ' â T‘ _ « eLSR b d I D a l] u -e _ T/Mf_> T fR ¿ÀC ^ T1M£_­­ E ’Ä-ILC zoßs-jbfconMluïAT/NGd TIME n‘ ' TIME f77 Ve n?or" fag/Wma’ ¿ff/Var an y Mmh 5, 1968 R. E. MORGAN \ 3,372,327 TIME RATIO CONTROL AND INVERTER POWER CIRCUITS 'Voriginal Filed Dec. 26, 1963 1:5 Sheéts­~sneet s I/ _ /n Vent/Lor' Pay/770270’ 15T/70x35?? March 5, 196s R, E, MORGAN 3,372,327 TIME RATIO CONTROL AND INVERTER X’OWER CIRCUITS Original Filed Dec. 26, 1963 I 13 Sheets-¿Sheet 6 + PÃ?. /0. [s /Z I FQ.+ Il. ,/3 Y /9 Sil o’z :? 1_ ' ¿ß /7 if@ ' yagma/7a’ ¿iT/Vor' ¿7n His /íóí-o neg March 5, 1968 R. E. MORGAN 3,372,327 TIME RATÍO CONTROL AND INVERTER PÓWERl CIRCUITS Original Filed Dec. 26, 1963 13 ,Sheets‘ßheet '.f 11g. fz. Z50 70 6A rf . 60A/mm /3 Íâymand ¿ST/Vor a?? ¿y JSAMQWM, March 5, 1968 R. E. MORGAN 3,372,327 TIME RATIO CONTROL AND INVERTER POWER CIRCUITS Original Filed Dec. 26, 1963 13 Sheets~$heet .2e + o n ¿can ¿a fr VIA f5' O l _ ó’á’ 4 I 4 ¿j sa f4 . y, . p . ¿f ¿g ­' ßá’ ¿5' fr? Mentor.' Rag/mona’ I. Moìjgân, March 5, 1968 R. E. MORGAN 3,372,327 TIME RATIO CONTROL AND INVERTER POWER CIRCUITS Original Filed Deo. 26, 1963 13 Sheets-Sheet 9 In Ven ó or.' Raymond f. Maga/‘7, f-/Ás A é zíojney. March 5, 1968 R. E. MORGAN 3,372,327 TIME RATIO CONTROL AND •INVER'I‘ER POWER CIRCUITSv Original Filed Deo. 26, 1965 13 SheetS-Sheet 10 ¿if ¿5f ¿5 ¿PJM ,am ¿JC¿ß u fgf ° 4u f4 n u n { 4. , - + M VIA MC s/C [t] œ . /a/ ° _ [1 ¿ff iff 93 V [me i” „f f/f f3 . ‘ : a I | l s c `92a /04 T |__ _ J _ /4 fr? Ven z3 02".' Pág/mond Ä'. /Wor‘l an, ’by fía-MAM Q. March 5, 1968 R. E. MORGAN ­ 3,372,327 TIME RATIO CONTROL AND-INVERTER POWER CIRCUITS Original Filed Dec. 26, 1963 13 Sheets-Sheet 11 liga. //< Lana' 26 3 Zd’ /77 verzfor' Kaag/mana’ ¿V70/:gian March 5, 1968 R. E. MORGAN 3,372,327 TIME RATIO CONTROL AND INVERTER POWER CIRCUITS Original Filed Dec. 26, 1963 115 Sheets­~5heet l2 Z4.1y. ì ä fr: Venáor- ¿I +o faymonä'?Í/Yorjaf? ' ßs/ gew-»2M í//Ís Aí-á-orney/ March 5, 1968 R. E. MORGAN 3,372,327 TIME RATIO CONTROL AND INVERTER POWER CIRCUITS Original Filed DeC. 26, 1965 13 Sheets-'Sheet 15 www._W fn ve m’îor /Paymand ¿ff/70535617 1 3,372,327 United States Patent C) rice Patented Mar. 5, 1968 l 2 3,372,327 usually effect turning off of the SCR by reversal of the TIME RATIÜ CÜNTRÜL AND INVERTER potential across the SCR. In addition to the SCR, recent POWER CIRCUITS advances in the semiconductor art have made available to Raymond E. Morgan, Schenectady, NYY., `assigner to industry new solid state semiconductor devices which are General Eiectric Company, a corporation of New York controlled turn on, non-gate turn olf conducting devices, @riginal application Dec. 26, 1963, Ser. No. 334,690. but which are bi-directional conducting devices. By bi~ Divided and this application May l2, 1967, Ser. No. directional conducting device is meant the device is capa 639,594 ble of condusting electric current in either direction 8 Claims. (Cl. 321-43) through the device. Gne 0f these last mentioned devices, referred to as a “Triac,” is a gate controlled turn on ABSTRACT 0F THE DÍSCLOSURE NPNPN junction device which, similar to the SCR, is a non-gate turn olf device that must be turned otf by ex A family of time ratio control D-C power circuits com ternal commutation circuit means. While the preferred prises a load current carrying SCR, triac, diac, or dv./ dt. form of triac is a tive‘layer gate controlled device, it fired SCR which is turned on and commutated off at de should be noted that four-layer PNPN and NPNP junc sired intervals to supply power to the load, which is con tion gate control triac devices are practical as well as other nected in series with a ñlter inductance and in parallel ' variations, but that in any event the triac characteristics with a coasting diode for inductive loads. The commuta mentioned above are common to all of them. The second tion circuit comprises a commutating capacitor in series newly available power device, referred to as a “power with a parallel-connected linear inductance and saturable 20 diac” is a two terminal, five layer NPNPN junction device reactor and with an auxiliary SCR-diode combination or which like the triac has bi-directional conducting charac triac. The capacitor-linear inductance are tuned to series teristics. In contrast to the SCR and triac, however, the resonance at a frequency substantially lower than the diac is not a gate turn von device, but must be turned on commutating frequency, while the capacitor-saturable re by the application of a relatively steep voltage pulse (high actor are tuned to series resonance at the commutating 25 dv./dt.) applied across its terminals. lIt should be noted frequency. For power generating loads, a coasting~feed­ that SCR and triacs may also be tired by the same high ‘back triac, diac, or dv./ dt. tired SCR is connected in par dv./ dt. technique. However, the diac is similar to the SCR allel with the load and a bidirectional load current carry and triac in that it too must be turned off by external cir ing device is used to return power to the supply and there cuit commutation means. The present invention provides by provided a second mode of operation for the circuit. 30 new and improved power cir-cuits employing solid state Inverters employ two cooperating pairs of circuits. semi-conductor devices of the above general type as well as a new and improved commutation scheme for use with such devices. It is therefore a primary object of the pres This is a division of application Ser. No. 334,690 tiled ent invention to provide an entire family of new and im Dec. 26, 196'3, and assigned to the same assignee as the r proved power circuits employing controlled turn on, non present invention. gate turn oif conducting devices. The present invention relates to a family of new and Another object of the invention is to provide a new and improved power circuits employing new controlled turn improved commutation scheme for power circuits em on conducting devices and a new and improved commuta 40 ploying controlled turn on, non-gate turn olf conducting tion scheme. devices which allows for a reduction in the size of com More particularly, t-he invention relates to a family of ponents employed in the circuit for a given power rating, power circuits employing turn on, non-gate turn off solid and hence is economical to manufacture. state semiconductor control devices for pow-er switching A further object of the invention is the provision of purposes, time ratio control of direct current electric such a new and improved commutation scheme which is power or for inversion 4of direct current electric power to 45 economical and eiiicient in operation, and which provides alternating current electric power. By time ratio control reliable commutation that is independent of load from no of direct current electric power is meant the chopping up load to full load operating conditions. of a direct current electric potential by controlling the on In practicing the invention, new an-d improved power time of a turn on, turn off power switching device con circuits are provided using controlled turn on, n-on-gate nected in circuit relationship with a load and the direct 50 turn olf solid state semi-conductor devices. These new and current electric potential. By inversion of dire-ct current improved power circuits include in combination a load electric power to alternating current electric power is current carrying turn on, non-gate turn olf controlled meant the switching of a load across alternate output conducting device and a load eifectively coupled in se terminals of a direct current electric supply by appropri ries circuit relationship across a pair of power supply ately switching turn on, turn ofi‘ power switching devices 55 terminals that in turn are adapted 4to be connected across connecting the load in circ-uit relationship with the direct a source of electric potential.
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