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Arxiv:2010.13985V2 [Cond-Mat.Mtrl-Sci] 28 Mar 2021

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Arxiv:2010.13985V2 [Cond-Mat.Mtrl-Sci] 28 Mar 2021 Defect-induced 4p-magnetism in layered platinum diselenide Priyanka Manchanda, Pankaj Kumar, and Pratibha Dev Department of Physics and Astronomy, Howard University, Washington, D.C. 20059, USA Platinum diselenide (PtSe2) is a recently-discovered extrinsic magnet, with its magnetism at- tributed to the presence of Pt-vacancies. The host material to these defects itself displays interest- ing structural and electronic properties, some of which stem from an unusually strong interaction between its layers. To date, it is not clear how the unique intrinsic properties of PtSe2 will affect its induced magnetism. In this theoretical work, we show that the defect-induced magnetism in PtSe2 thin films is highly sensitive to: (i) defect density, (ii) strain, (iii) layer-thickness, and (iv) substrate choice. These different factors dramatically modify all magnetic properties, including the magnitude of local moments, strength of the coupling, and even nature of the coupling between the moments. We further show that the strong inter-layer interactions are key to understanding these effects. A better understanding of the various influences on magnetism can enable controllable tuning of the magnetic properties in Pt-based dichalcogenides, which can be used to design novel devices for magnetoelectric and magneto-optic applications. I. INTRODUCTION ical works have proposed other strategies for inducing a magnetic moment in PtSe2 monolayers, such as: (i) com- bining strain with hole doping to induce magnetism21, The recent discovery of magnetism in two dimensional (ii) Se-vacancy in the simultaneous presence of strain22, 1{4 (2D) layered materials has sparked renewed interest (iii) hydrogenation on Se sites23, and (iv) doping with in one of the oldest and most well-studied emergent transition metal elements24. Most of these theoretical phenomenon within solid state physics: collective mag- works used freestanding monolayers of PtSe2 placed in netism. Not only do these 2D magnets circumvent the vacuum, ignoring the effects of layer-thickness, or the Mermin-Wagner theorem, which forbids long-ranged or- presence of a substrate. However, experiments indicate der in lower dimensions through magnetic anisotropy, but that the magnetic properties in 2D crystals are strongly they also possess an interesting tunability of their mag- affected by layer thickness and substrates19,25,26. For ex- netic properties that is facilitated by their 2D nature. ample, in a more recent paper by Avsar et al.26, the For instance, magnetic ordering in CrI thin films2,5 has 3 authors discovered that magnetic ordering in PtSe2 is been shown to depend on the number of layers. It was antiferromagnetic in a monolayer, while it is ferromag- also shown that the nature of magnetic coupling in a netic in a bilayer. This is an important result, showing CrI bilayer6 can be tuned by electric fields (gating). 3 layer-thickness dependence of VPt-induced magnetism in Theoretical work on CrX (X = Cl, Br, I) monolayers7 3 PtSe2. The importance of taking layer-thickness and/or also indicates that strain can be used to tune magnetic substrates into account in studies of 2D materials, in gen- properties. Hence, 2D magnets and their tunable prop- eral, was also recently highlighted in other careful theo- erties offer opportunities to study the phenomena of lo- retical studies of different 2D crystals27,28. cal moment formation and collective magnetism in low- dimensions, as well as to design devices for spintronics, magneto-optics, quantum-information and -sensing ap- plications. These 2D magnets can be: (i) intrinsic in In this work, out of the different proposed ways of in- nature, such as CrI , or (ii) extrinsic in nature. In the lat- 3 ducing magnetism in PtSe thin films, we chose to use ter category, we include all 2D materials, otherwise non- 2 platinum vacancies, as these defects have been experi- magnetic, in which magnetism can be induced through: mentally implicated in the observed magnetic ordering in (i) defect engineering (vacancies, substitutionals, cre- PtSe 19,26,29. We explored the dependence of the defect- ating edges/nanoribbons)8{11, (ii) intercalation between 2 induced magnetism on several factors: (i) vacancy con- layers by magnetic species12{16, or (iii) proximity effects centration, (ii) strain (iii) layer-thickness, and (iv) sub- (2D crystal placed on a magnetic substrate)17,18. With strate choice. Using DFT-based calculations, we find only a few known intrinsic 2D magnets, there is a strong arXiv:2010.13985v2 [cond-mat.mtrl-sci] 28 Mar 2021 that the magnitude of the magnetic moment and the ex- motivation to use the aforementioned strategies to induce change coupling between the moments are modified with collective magnetism in non-magnetic 2D crystals. vacancy concentration as well as strain. Moreover, the Amongst extrinsic 2D magnets, long-ranged mag- magnetic properties depend significantly on layer thick- netism was recently discovered in platinum diselenide ness/substrate due to the strong interlayer interaction 19 (PtSe2) thin films . In this joint experimental- between the layers in the presence of Pt-vacancies. Our theoretical work, Avsar et al. attributed the observed results show that accounting for the \real-world condi- 19 magnetism to the presence of platinum vacancies (VPt) , tions", such as layer thickness, strain and the presence of which had also been previously investigated using density a substrate, is imperative when predicting the magnetic functional theory (DFT)20. In addition, several theoret- properties of 2D materials. 2 a) b) c) PtSe2 monolayer PtSe2 bilayer Pt a Se a = 3.75 Å d) e) 2.30 Å 3.15 Å PtSe2 bilayer WSe2 bilayer FIG. 1. Pristine PtSe2 properties. (a) Structure (top view) of pristine T -phase PtSe2 monolayer. The dashed area shows the primitive unit cell for PtSe2. Band structures for a PtSe2 (b) monolayer and (c) bilayer, showing layer dependence of electronic structure properties. The charge density difference plot, ∆ρ = ρ(bilayer) − ρ(top-layer) − ρ(bottom-layer), for (d) PtSe2 and (e) WSe2 bilayers, respectively, showing larger interlayer interaction in the former structure versus the latter structure. The pink and yellow isosurfaces represent charge accumulation and depletion, respectively. II. CALCULATION DETAILS were separated by 25 A˚ of vacuum to eliminate spurious interactions between the periodic images. Our spin-polarized DFT calculations were per- formed using the Vienna Ab-initio Simulation Package III. RESULTS AND DISCUSSION (VASP)30. A small subset of the calculations were also performed using the Quantum Espresso Package31. In Figure 1(a) shows the optimized structure of a pris- all of the calculations, the generalized gradient approx- tine PtSe2 monolayer, for which the lowest energy phase imation (GGA) of Perdew-Burke-Erzerhof (PBE)32 was is the octahedrally-coordinated T -phase. Before inves- used to account for exchange correlation effects. To cor- tigating defect-induced magnetism in 1T-PtSe2, it is in- rectly describe the interlayer interactions in PtSe2 thin structive to consider the unique properties of the pristine films, Grimme's DFT-D3 van der Waals (vdW) correc- structure, which set PtSe2 apart from more extensively- tions was used33. The kinetic energy cut-off was set to investigated group-VI TMDs. Recent experimental34 500 eV. To study the effect of defect concentrations, we and theoretical35,36 studies showed a dramatic change in created VPt in n × n × 1 supercells, with n=3, 4 and its electronic structure properties as a function of thick- 5, corresponding to the defect concentrations of 11.11%, ness. This material, which prefers AA-stacking, is metal- 6.25% and 4.00%. For the 11.11%, and 6.25% vacancy lic in bulk, semi-metallic as a trilayer, and semiconduct- concentrations, we varied the layer thickness (up to 4- ing as a bilayer or a monolayer. Figures 1(b) and (c) are layers), placing the vacancy in the topmost layer. The plots of the band structures of a pristine monolayer and k-point sets used in all of our calculations were equiv- a bilayer, respectively, showing the layer-dependence of alent to at least a 21 × 21 × 1-grid for the unit cell of the indirect band gap, which changes from about 1:40 eV PtSe2. To study the effects of substrates, we considered for the former structure to about 0:20 eV in the latter three representative substrates: graphene [used in the structure. This strong dependence of electronic struc- experiment by Avsar et al.26], hexagonal boron nitride ture properties on the sample thickness stems from a [hBN], and copper [Cu(111)]. For the PtSe2/hBN and strong interlayer interaction, resulting in much smaller PtSe2/graphene heterostructures, we used a 4 × 4 × 1 su- distances between the layers. For example, in the case of percell PtSe2 placed on a 6 × 6 × 1 supercell of hBN or a PtSe2 bilayer, the binding energy, Eb, is −0:199 eV/f.u. graphene (lattice mismatch: 0.33% and −1:60%, respec- [with Eb = Ebilayer − Etop−layer − Ebottom−layer, EX tively). For PtSe2/Cu(111), we used 4×4×1 supercell of = total energy of system X, and formula unit abbre- PtSe2 on a 4-atom thick layer of Cu(111), with a lattice viated as f.u.], and the calculated interlayer distance is mismatch of 2.62%. For all the structures, energy conver- about 2:30 A.˚ For comparison, the calculated binding en- −6 gence criterion was set to be better than 10 eV and the ergy for a WSe2 bilayer is −0:148 eV/f.u., and the in- atomic relaxations were carried out until the Hellmann- terlayer distance is about 3:15 A,˚ where we have cho- −2 Feynman forces were smaller then 10 eV/A.˚ The layers sen WSe2 as a representative material from group-VI 3 TMDs. The strong interlayer interaction in PtSe2 can atom), as shown in Fig.
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