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Progress Report 1985 - 1986

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Progress Report 1985 - 1986 PROGRESS REPORT 1985 - 1986 Instituto de Física Universidade Federal do Rio Grande do Sul Ptril Mtffi • Imi mi FOREWORD Despite difficulties arising fro» uncertainties in the scientific policy and economic situation of the country, the scientific activity and production of the Institute regained at the level of previous years. During the present period the Institute of Physics Moved to the new University Campus thereby having access to ample new installations and waking possible the expansion of its activities. Although expected to be beneficial in the long range, numerous difficulties had to be «et particularly by experimental groups, slowing down temporarily their production, until all the equip- ments were again operational. A new COBRA 1400 computer (equivalent to a Eclipse Data General MV 8000 II one'; has been acquired. This acquisition nade possible for the first tine in many years, an adequate level of computational support for our work. During this period discussions were started on the need for new research and technological facilities for our Institute, in particular laboratories for thin films and electronic microscopy, and expansion of the existing ones, like the ion implantation. The scientific achievements of the Institute were made possible by the financial support of FINEP (Financiadora de Estudos e Projetos), CNPq (Conselho Nacional de Desenvolvimento Científico e Tecnológico), CAPES (Coordenação de Aperfeiçoamento de Pessoal de NTvel Superior) anó the University Administration. The continuous support of the University Administration to secure outside funding is also acknowledged. The effort in editing this report,due to Professor Walter K. Iheumann with the expert assistance of Mrs. Ivone H. Schunck, who also did part of the typing together with Mrs. Manda Aurélio Knebel, Mrs. Ana Neri Juliano Nunes, Mrs. Maria Cecilia do Ama- ral, Mrs. Mara N. C, Friedrich and Mrs. Denise A. R. Cauiuro are gratefully acknowledged. Edemundo da Rocha Vieira, Director, Institute of Physics. TABLE OP CO8TEKTS Peat I. RESEARCH 19 EXPEKIMBKTAL PHYSICS I.a) Perturbed Angular Correlation -Magnetic Hyperf ine Fields in Beusler Alloys Co ?YZ ft • Ti.Zr; Z » Al,Ca,So) 3 - The Effect of Pressure and Temperature on the Electric Fi«*ld Gradient in the Indium Sites in Compounds of the In-Bi System 1 I.b) MOssbauer Spectroscopy - Spin Reoricntation in (Er,Gd)Fe3 Compounds 5 -Magnetic Properties of the Hydride Pd FeHQ 7 5 -Spin Reorientation Phenomena in KJe.4» (RE = Ce, Dy» Et ) Alloys from "Fe and Dy Mttssbauer Spectroscopies 6 - Hyperf inc Fields at sr Sites in the Heusler Alloys Rh.Mr.Z Ú - Ce,Sn,Pb) 6 - MBssbauer Measurement of the Hyperfine Magnetic Field at p ite in Heusler Alloys Rh~MnZ (Z * In and Sb) 7 -Magnetism and Crystal Field Properties of the (RE - Y, Ce, Dy. Er) from MBssbauer Spectroscopy -Electrical Transport Properties of B13NÍ under Helium and Hydrogen Implantation 8 -Spin Reorientation Phenomena in (Er Gd ),Fe ,B Alloys ê - TDPAC and MBssbauer Measurements of Hyperfine Fields in Chroeium- Based Chalcogenide Spinels 9 I.c) Ion Implantation InPd Interactions in Defect Ca^cr.des in AgPd and CuFd 1 1 -Distributions of Light Ions and Foil Destruction after Irradiation of Organic Polymers -Depth Profile and Thermal Annealing Behaviour of Bi Implanted into an Al/Ti Bilayer Structure 12 -Range Profiles of Implanted Bi and Au in Amorphous Silicon M -Range Profiles of 10 to 380 keV i20Sn and '33Cs in Amorphous Silicon 13 - Secondary Electron Emission from the Entrance and Exit Surfaces of Thin Carbon Foils under Fast Ion Bombardment 't 3 -Two Types of HeV Ion Beam Enhanced Adhesion for Au Films on SiO_ 14 - Adhesion Enhancement Induced by MeV Ion Beams 1 b -Measurement of the Carbon Content of Silicate Glasses by Use of 12 13 the C(d,p0) C Reaction 16 -Electrical Contact and Adhesion Modification Produced by High Energy Heavy Ion Bombardment of Au Film on GaAs 1 7 -Comparative Study oft Interactsilie F&atas Foraeã t/ direct .ao Implantation and Radiation Enhanced Diffusion of Tin in Two Kinds of Steel 18 -Mass and Energy Dependence of I*tp I an ted Ion Profiles in the AZIlt Photoresist 19 -Energy. Mass and Dose Dependence of Implanted lot. Distribution into Polymer Layers 1? - Large Z -Range Effect for Eu, Yb sad Au lens laplanted la Aax>rphit£d Silicon 20 - Implantation and Thermal Annealing Behaviour of Bi Implante* into Al/Ti and Ai/V Bilayer Structures 20 -Energy Dependence of the Z -Range Oscillation Effects in Si'icon 2 1 -Range Prcfiles of Ions in Double-Layer Structures 2' - Range Distributions and Thermal Behaviour of Bi laplaraei . to KC1 and Al/KCI Bilayer Structure 2. - Comparison of Several Nuclear Reactions Techniques for Hyaiogen Depth Profiling in Sclids 2. -Measurement of Eolian Sand Ripple Cross-Sectional Shapes 2 3 - Llectrical Transport Properties of Bi-Ki under Heiiua Irradiation and Hydrogen Implantation 24 -Evidence for che Metal-Insulator Transition in a Pure 3D Metal 2 5 - Direct Ion Implantation and Radiation Enhanced Diffusion of Tin into Iron 2 3 - Ion Inplantation Metallurgy 26 - Influence of He-Vacancy Complexes on the Thermal Behavior of Nitrogen Precipitates in Fe 26 -Modification of the Mechanisms of High Teasperature Oxidation of Steels by Tin Ion Inplantation and Radiation Enhanced Diffusion Par I - High Cr bon Steel 2 7 - Projected Ranges and Range Stragglings of Au and Bi Implapted into Carbon Films and into 5iO~ 28 - Hydrogen Depth Profiling in Solids: A Comparison of Several Res. nant Nuclear Reaction Techniques 26 - Interdiffusion and Reaction in the Iron-Aluminum Bilayer. I - Rutherford Backscattering Analysis of Furnace Annealed Samples 29 -Concentration-Depth Profile of RBS Spectra with Poor Mass Rose i it ion 30 - lor. Implantation and Radiation Enhanced Diffusion of Tin into Iron and Steels 30 -Dopants Redistribution During Titsnium-Disilicide Forsation by Rapid Thermal Processing 31 l.d) Microelectronics -Recoil Implantation of Antimony into Silicon by Argon Ion Bombardment 3 3 Page - The Suppression of Residual Defects in Silicon Implanted vith Arsenic by Rapid Isothermal Annealing 13 -Residual Defects in Implanted Silicon Submited to RTA: Evidence of a Chemical Effect 34 -A Channelling and Conversion Electron MBssbauer Spectroscopy Study of Annealing Behaviour of Tin Implanted Silicon 34 -Dopants Redistribution During Titanium-Disilicide Formation by Rapid Thermal Processing 35 -The Suppression of Residual Defects of Silicon Implanted vith Group III, IV and V Elements 35 -Rapid Thermal Annealing of Silicon Amorphized by Ionic Implantation 36 - Sb Recoil Implantation in Si by Ar and Ge Ion Bombardment 36 -Formation of Niquel and Titanium Suicides by Rapid Thermal Process 3 7 I.e) Electronic Transport and Magnetism -Magnetic Ordering in YGd Alloys 40 -Magnetostriction of Single Crystals of Yttriun Doped with Rare Earths Impurities <*0 - Helimagnetic Structure in Diluted Y-Gd Alloys u ' -Hall Effect in Ce^ Y Pd. Mixed-Valence Alloys 4i -Spin-Disorder Resistivity in Ni-MniSn. In ) Heasler Alloys 42 - Anisotropic Thermal Expansion of Yttrium Metal and Yttrium-Based Rare Earth Alloys at Low Temperature 4 2 - Specific Heat Measurements in Scandium - Rare Earth Anisotropic Spin Glasses 4 2 -Comparative Study of Isothermal and Isochronous Crystallization of Metallic Glasses 4 3 -Crystallization of Feon Ni BOA Glasses 43 DU—X X £\J -Chemical Short Range Order in Fe20N*60B2Q Amorphous Alloys 4 4 -Electrical Resistivity of Amorphous Fen m-Zr- na 44 -Electrical Resistivity Near the Critical Point in Pd-Based Heusler Alloys 4 3 -Critical Coeficients for the Ferro-Param&gnetic Phase Transition in Metallic Glasses at High Temperatures 46 -Ion Bombardemetit of Metallic Glasses 46 -Study of the Crystallization and Thermal Stability of Amorphous Alloys Type (Pe1x»ix)80B20 4 7 - Seoiclassical Theory of the Electronic Transport in Metals 48 I.f) Laser -Tuning of a tfarroy Linewidth Pulsed Dye Laser with a Fabryperot and Diffration Grating Over a Large Wavelength Range 50 P«ge Microstracture and sone of its Optical Effects in Thin Films SO Measurement of the Principal Refractive Indices of Thin Films 30 FECO-Based Observations of Birefringence at Normal Incidence in Optical Coatings 5? Computer Simulation of Thin Film Growth: Applying the Results to Optical Coatings 52 Pirani Pressure Sensor Built with the Filament of Incandescent Lamp 3 2 + The 337 nm Nitrogen Laser Resonances with the f 0 ( Po)-B Transitions in Molecular Iodine (I_) 88 5 3 -Deterministic Chaos in a Glow O.C. Helium Discharge 5 3 -Accidental Resonances of the 337 ran Nitrogen Laser with the f-B Transitions in Molecular Iodine 5- - Light Scattered by a Microscopic Sphere 3 5 -CARS Studies of Energy-Transfer Processes in Na-H., System -Õ -A Variable-Angle Ellipsometer for Refractive-Index Measurements 3b II. RESEARCH IN THEORETICAL PHYSICS II.a) Condensed Matter Theory - Effect of the d-f Correlation on the Electronic Structure of Intermediate Valence Systems 5 9 -Real Space Renormalization of a Mixed Valence Haroiltonian on a Bethe Lattice 3 9 - Effect of the d-f Coulomb Correlation on the Valence Transition of Intermediate Valence Systems 59 - Effect of the Spatial Correlation on the Alloy Analogy Approxi- mation to the Hubbard Hamiltonian 60 -Critical Exponents for 4> -Field Models with Long-Range Interactions 60 - A New Approach to the Study of an Anderson Impurity in a Linear Chain 6! -The Spherical-Model Limit in a Random Field 6' -Effects of Trilinear Symmetry Breaking on the Potts-Model Transition of Uniaxially Stressed
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